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RU2007121704A - Аморфный оксид и полевой транзистор с его использованием - Google Patents

Аморфный оксид и полевой транзистор с его использованием Download PDF

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RU2007121704A
RU2007121704A RU2007121704/28A RU2007121704A RU2007121704A RU 2007121704 A RU2007121704 A RU 2007121704A RU 2007121704/28 A RU2007121704/28 A RU 2007121704/28A RU 2007121704 A RU2007121704 A RU 2007121704A RU 2007121704 A RU2007121704 A RU 2007121704A
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amorphous oxide
oxide
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Масафуми САНО (JP)
Масафуми САНО
Кацуми НАКАГАВА (JP)
Кацуми НАКАГАВА
Хидео ХОСОНО (JP)
Хидео ХОСОНО
Тосио КАМИЯ (JP)
Тосио КАМИЯ
Кендзи НОМУРА (JP)
Кендзи НОМУРА
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Кэнон Кабусики Кайся (Jp)
Кэнон Кабусики Кайся
Токио Инститьют Оф Текнолоджи (Jp)
Токио Инститьют Оф Текнолоджи
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Abstract

1. Аморфный оксид, содержащий микрокристалл и имеющий концентрацию электронных носителей менее 10/см.2. Аморфный оксид по п.1, содержащий, по меньшей мере, один элемент, выбранный из группы, состоящей из In, Zn и Sn.3. Аморфный оксид по п.1, в котором аморфный оксид выбирают из группы, состоящей из: оксида, содержащего In, Zn и Sn; оксида, содержащего In и Zn; оксида, содержащего In и Sn; и оксида, содержащего In.4. Аморфный оксид по п.1, содержащий In, Ga и Zn.5. Аморфный оксид, в котором подвижность электронов увеличивается с увеличением концентрации электронных носителей.6. Полевой транзистор, содержащий активный слой из аморфного оксида, содержащего микрокристалл, и электрод затвора, сформированный таким образом, что он обращен к активному слою через изолятор затвора.7. Полевой транзистор по п.6, причем транзистор представляет собой транзистор нормально выключенного типа.8. Аморфный оксид, состав которого изменяется в направлении толщины слоя и который имеет концентрацию электронных носителей менее 10/см.9. Аморфный оксид по п.8, причем аморфный оксид содержит, по меньшей мере, один элемент, выбранный из группы, состоящей из In, Zn и Sn.10. Аморфный оксид по п.8, в котором аморфный оксид является любым, выбранным из группы, состоящей из: оксида, содержащего In, Zn и Sn; оксида, содержащего In и Zn; оксида, содержащего In и Sn; и оксида, содержащего In.11. Аморфный оксид по п.8, причем аморфный оксид содержит In, Ga и Zn.12. Полевой транзистор, содержащийактивный слой из аморфного оксида, состав которого изменяется в направлении толщины слоя, иэлектрод затвора, сформированный таким образом, чтобы он был обращен к активному слою через изолятор затвора,причем активный слой �

Claims (21)

1. Аморфный оксид, содержащий микрокристалл и имеющий концентрацию электронных носителей менее 1018/см3.
2. Аморфный оксид по п.1, содержащий, по меньшей мере, один элемент, выбранный из группы, состоящей из In, Zn и Sn.
3. Аморфный оксид по п.1, в котором аморфный оксид выбирают из группы, состоящей из: оксида, содержащего In, Zn и Sn; оксида, содержащего In и Zn; оксида, содержащего In и Sn; и оксида, содержащего In.
4. Аморфный оксид по п.1, содержащий In, Ga и Zn.
5. Аморфный оксид, в котором подвижность электронов увеличивается с увеличением концентрации электронных носителей.
6. Полевой транзистор, содержащий активный слой из аморфного оксида, содержащего микрокристалл, и электрод затвора, сформированный таким образом, что он обращен к активному слою через изолятор затвора.
7. Полевой транзистор по п.6, причем транзистор представляет собой транзистор нормально выключенного типа.
8. Аморфный оксид, состав которого изменяется в направлении толщины слоя и который имеет концентрацию электронных носителей менее 1018/см3.
9. Аморфный оксид по п.8, причем аморфный оксид содержит, по меньшей мере, один элемент, выбранный из группы, состоящей из In, Zn и Sn.
10. Аморфный оксид по п.8, в котором аморфный оксид является любым, выбранным из группы, состоящей из: оксида, содержащего In, Zn и Sn; оксида, содержащего In и Zn; оксида, содержащего In и Sn; и оксида, содержащего In.
11. Аморфный оксид по п.8, причем аморфный оксид содержит In, Ga и Zn.
12. Полевой транзистор, содержащий
активный слой из аморфного оксида, состав которого изменяется в направлении толщины слоя, и
электрод затвора, сформированный таким образом, чтобы он был обращен к активному слою через изолятор затвора,
причем активный слой содержит первую область и вторую область, которая расположена ближе к изолятору затвора, чем первая область, и концентрация кислорода в первой области выше, чем концентрация кислорода во второй области.
13. Полевой транзистор, содержащий
активный слой из аморфного оксида, содержащего, по меньшей мере, один элемент, выбранный из группы, состоящей из In и Zn, и
электрод затвора, сформированный таким образом, чтобы он был обращен к активному слою через изолятор затвора,
причем активный слой содержит первую область и вторую область, которая расположена к изолятору затвора ближе первой области, и концентрация In во второй области выше, чем концентрация In в первой области, или концентрация Zn во второй области выше, чем концентрация Zn в первой области.
14. Аморфный оксид, состав которого изменяется в направлении толщины слоя, причем подвижность электронов увеличивается с увеличением концентрации электронных носителей.
15. Полевой транзистор, содержащий
активный слой из аморфного оксида, содержащего, по меньшей мере, один элемент, выбранный из группы, состоящей из In и Zn; и
электрод затвора, сформированный таким образом, чтобы он был обращен к активному слою через изолятор затвора,
причем активный слой содержит первую область и вторую область, которая расположена ближе к изолятору затвора, чем первая область, и концентрация In во второй области выше, чем концентрация In в первой области, или концентрация Zn во второй области выше, чем концентрация Zn в первой области.
16. Аморфный оксид, содержащий один тип элемента или множество элементов, выбранных из группы, состоящей из Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn и F и имеющий концентрацию электронных носителей менее 1018/см3.
17. Аморфный оксид по п.16, содержащий, по меньшей мере, один элемент, выбранный из группы, состоящей из In, Zn и Sn.
18. Аморфный оксид по п.16, в котором аморфный оксид представляет собой любой один, выбранный из группы, состоящей из: оксида, содержащего In, Zn и Sn; оксида, содержащего In и Zn; оксида, содержащего In и Sn; оксида, содержащего In.
19. Аморфный оксид по п.16, содержащий In, Zn и Ga.
20. Аморфный оксид, содержащий, по меньшей мере, один элемент, выбранный из группы, состоящей из Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn и F, причем подвижность электронов увеличивается с увеличением концентрации электронных носителей.
21. Полевой транзистор, содержащий
активный слой из аморфного оксида, содержащий, по меньшей мере, один элемент, выбранный из группы, состоящей из Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn и F, и
электрод затвора, сформированный таким образом, чтобы он был обращен к активному слою через изолятор затвора.
RU2007121704A 2004-11-10 2005-11-09 Аморфный оксид и полевой транзистор с его использованием RU2369940C2 (ru)

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US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
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