TW201408676A - 鈍化層形成用組成物、帶有鈍化層的半導體基板、帶有鈍化層的半導體基板的製造方法、太陽電池元件、太陽電池元件的製造方法及太陽電池 - Google Patents

鈍化層形成用組成物、帶有鈍化層的半導體基板、帶有鈍化層的半導體基板的製造方法、太陽電池元件、太陽電池元件的製造方法及太陽電池 Download PDF

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Publication number: TW201408676A
Authority: TW; Taiwan
Prior art keywords: passivation; passivation layer; group; composition; layer
Prior art date: 2012-07-19

Application number

TW102126034A

Other languages

English (en)

Chinese (zh)

Inventor

Tsuyoshi Hayasaka

Masato Yoshida

Takeshi Nojiri

Yasushi Kurata

Tooru Tanaka

Akihiro Orita

Shuichiro Adachi

Takashi Hattori

Mieko Matsumura

Keiji Watanabe

Masatoshi Morishita

Hirotaka Hamamura

Original Assignee

Hitachi Chemical Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2012-07-19

Filing date

2013-07-19

Publication date

2014-03-01

2013-07-19 Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd

2014-03-01 Publication of TW201408676A publication Critical patent/TW201408676A/zh

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XZHNPVKXBNDGJD-UHFFFAOYSA-N tetradecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCCOC(=O)C=C XZHNPVKXBNDGJD-UHFFFAOYSA-N 0.000 description 1
UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
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238000002076 thermal analysis method Methods 0.000 description 1
238000002230 thermal chemical vapour deposition Methods 0.000 description 1
238000005979 thermal decomposition reaction Methods 0.000 description 1
125000003396 thiol group Chemical group [H]S* 0.000 description 1
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235000010487 tragacanth Nutrition 0.000 description 1
229940116362 tragacanth Drugs 0.000 description 1
XJPBRODHZKDRCB-UHFFFAOYSA-N trans-alpha-ocimene Natural products CC(=C)CCC=C(C)C=C XJPBRODHZKDRCB-UHFFFAOYSA-N 0.000 description 1
KNPRLIQQQKEOJN-UHFFFAOYSA-N tri(propan-2-yloxy)bismuthane Chemical compound [Bi+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] KNPRLIQQQKEOJN-UHFFFAOYSA-N 0.000 description 1
125000005270 trialkylamine group Chemical group 0.000 description 1
MYWQGROTKMBNKN-UHFFFAOYSA-N tributoxyalumane Chemical compound [Al+3].CCCC[O-].CCCC[O-].CCCC[O-] MYWQGROTKMBNKN-UHFFFAOYSA-N 0.000 description 1
ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
MDDPTCUZZASZIQ-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]alumane Chemical compound [Al+3].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] MDDPTCUZZASZIQ-UHFFFAOYSA-N 0.000 description 1
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230000002792 vascular Effects 0.000 description 1
230000000007 visual effect Effects 0.000 description 1
238000005406 washing Methods 0.000 description 1
229920001285 xanthan gum Polymers 0.000 description 1
239000008096 xylene Substances 0.000 description 1
VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Photovoltaic Devices (AREA)
Formation Of Insulating Films (AREA)

TW102126034A 2012-07-19 2013-07-19 鈍化層形成用組成物、帶有鈍化層的半導體基板、帶有鈍化層的半導體基板的製造方法、太陽電池元件、太陽電池元件的製造方法及太陽電池 TW201408676A (zh)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
JP2012160336		2012-07-19
JP2012218389		2012-09-28
JP2013011934		2013-01-25
JP2013040153		2013-02-28
JP2013103571		2013-05-15

Publications (1)

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TW201408676A true TW201408676A (zh)	2014-03-01

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Country Status (4)

Country	Link
JP (1)	JP6269484B2 (ja)
CN (1)	CN104508830A (ja)
TW (1)	TW201408676A (ja)
WO (1)	WO2014014114A1 (ja)

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JP6525583B2 (ja) *	2014-12-25	2019-06-05	京セラ株式会社	太陽電池素子および太陽電池モジュール
KR101810892B1 (ko) *	2016-09-13	2017-12-20	동우 화인켐 주식회사	터치 센서 및 이를 포함하는 터치 스크린 패널
WO2019117809A1 (en) *	2017-12-11	2019-06-20	National University Of Singapore	A method of manufacturing a photovoltaic device
JP7483245B2 (ja) *	2020-04-09	2024-05-15	国立研究開発法人産業技術総合研究所	太陽電池およびその製造方法

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JPS625293A (ja) *	1985-07-01	1987-01-12	カシオ計算機株式会社	ウインドウ表示制御装置
JPS6252936A (ja) *	1985-08-31	1987-03-07	Nitto Electric Ind Co Ltd	半導体素子被覆用ペ−スト組成物
JP3658962B2 (ja) *	1998-01-13	2005-06-15	三菱化学株式会社	プラスチック積層体
JP2000294817A (ja) *	1999-04-09	2000-10-20	Dainippon Printing Co Ltd	太陽電池モジュ−ル用表面保護シ−トおよびそれを使用した太陽電池モジュ−ル
KR101528382B1 (ko) *	2007-10-17	2015-06-12	헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨	단면 후면 컨택 태양 전지용 유전성 코팅물
KR20120037364A (ko) *	2009-07-01	2012-04-19	세키스이가가쿠 고교가부시키가이샤	도전성 페이스트용 바인더 수지, 도전성 페이스트 및 태양 전지 소자
JP5633346B2 (ja) *	2009-12-25	2014-12-03	株式会社リコー	電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム
JP5899615B2 (ja) *	2010-03-18	2016-04-06	株式会社リコー	絶縁膜の製造方法及び半導体装置の製造方法

2013
- 2013-07-19 CN CN201380038106.4A patent/CN104508830A/zh active Pending
- 2013-07-19 JP JP2014525898A patent/JP6269484B2/ja not_active Expired - Fee Related
- 2013-07-19 WO PCT/JP2013/069704 patent/WO2014014114A1/ja not_active Ceased
- 2013-07-19 TW TW102126034A patent/TW201408676A/zh unknown

Also Published As

Publication number	Publication date
WO2014014114A1 (ja)	2014-01-23
JPWO2014014114A1 (ja)	2016-07-07
CN104508830A (zh)	2015-04-08
JP6269484B2 (ja)	2018-01-31
WO2014014114A9 (ja)	2014-07-10

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