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WO2013039019A1 - Électrode destinée à un dispositif de conversion photoélectrique, et dispositif de conversion photoélectrique - Google Patents

Électrode destinée à un dispositif de conversion photoélectrique, et dispositif de conversion photoélectrique Download PDF

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Publication number
WO2013039019A1
WO2013039019A1 PCT/JP2012/072998 JP2012072998W WO2013039019A1 WO 2013039019 A1 WO2013039019 A1 WO 2013039019A1 JP 2012072998 W JP2012072998 W JP 2012072998W WO 2013039019 A1 WO2013039019 A1 WO 2013039019A1
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Prior art keywords
electrode
photoelectric conversion
organic semiconductor
conversion device
layer
Prior art date
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Ceased
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PCT/JP2012/072998
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English (en)
Japanese (ja)
Inventor
善孝 長草
裕之 潮田
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Toyota Motor East Japan Inc
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Toyota Motor East Japan Inc
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Filing date
Publication date
Priority claimed from PCT/JP2011/071054 external-priority patent/WO2013038540A1/fr
Priority claimed from PCT/JP2011/071050 external-priority patent/WO2013038536A1/fr
Priority claimed from PCT/JP2011/071049 external-priority patent/WO2013038535A1/fr
Application filed by Toyota Motor East Japan Inc filed Critical Toyota Motor East Japan Inc
Priority to JP2013533648A priority Critical patent/JP5881050B2/ja
Publication of WO2013039019A1 publication Critical patent/WO2013039019A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an electrode for a photoelectric conversion device used for a photoelectric conversion device and a photoelectric conversion device using the same.
  • a photoelectric conversion device is a device that converts light into electrical energy and a device that converts electrical energy into light.
  • Examples of the former include solar cells, and examples of the latter include light emitting diodes.
  • the Si solar cell will be described taking a single crystal Si solar cell as an example.
  • a pn junction or a pin junction is formed by making the surface layer of the wafer an n-type semiconductor by vapor phase diffusion or implantation of n-type impurity ions into a p-type single crystal wafer.
  • a solar cell having a sandwich structure is manufactured by forming a front electrode and a back electrode.
  • This chalcopyrite solar cell includes a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing elements of Group I, Group III, and Group VI as constituent components as a p-type light absorption layer.
  • a chalcopyrite compound Cu (In + Ga) Se 2
  • Group I, Group III, and Group VI as constituent components as a p-type light absorption layer.
  • This solar cell with a CIGS layer generally prevents a back electrode layer, which is a positive electrode made of a Mo metal layer, on a glass substrate such as a soda lime glass (SLG) substrate, and Na unevenness caused by the SLG substrate.
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • SLG soda lime glass
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • a glass substrate such as a soda lime glass (SLG) substrate
  • SLG soda lime glass
  • the CIGS light absorbing layer is obtained by the following process. That is, the substrate itself provided with the In layer and the Cu—Ga layer as a precursor is accommodated in the annealing chamber and preheated. Thereafter, the precursor is converted into a CIGS layer by raising the temperature of the chamber to a temperature range of 500 to 520 ° C. while introducing H 2 Se gas through the gas introduction tube inserted into the annealing chamber.
  • organic semiconductor thin film solar cells are attracting attention as solar cells suitable for mass production because they can be formed by a coating method.
  • the organic solar cell has a so-called bulk heterojunction structure in which an organic donor material and an organic acceptor material are mixed.
  • an organic thin-film solar cell capable of forming a cathode on a flexible substrate by coating and a low-temperature process has been developed (for example, Patent Document 2).
  • an organic semiconductor thin-film solar cell has a structure in which an anode, a photoelectric conversion layer having a bulk heterojunction structure, and a cathode are sequentially laminated on one surface of a substrate, and the cathode is oxidized by coating. It consists of silver and a reducing agent, and the electron transport layer is formed by doping an organic metal in the vicinity of the cathode by coating, so that not only the cathode is formed at a low temperature, but also the bonding between the organic metal doped layer and the cathode is achieved. It is going to be improved.
  • the light irradiation side electrode is required to have good light transmittance and low electrical resistance.
  • the light irradiation side electrode needs to be formed by vapor deposition or plating of an expensive rare metal.
  • the process steps are complicated accordingly.
  • an object of the present invention is to provide an electrode for a photoelectric conversion device that does not require optical transparency as an electrode material and a photoelectric conversion device using the same.
  • the electrode for a photoelectric conversion device of the present invention has one electrode and the other electrode formed on the same surface, one electrode functions as a p-type electrode, and the other electrode Functions as an n-type electrode.
  • one electrode and the other electrode are provided side by side.
  • the one electrode and the other electrode are preferably composed of comb electrodes having a structure in which a plurality of electrode fingers are electrically connected at one end, and the electrode fingers of one electrode and the electrode fingers of the other electrode Are lined up alternately.
  • One electrode and the other electrode can be formed of either Cu or Al.
  • the photoelectric conversion device of the present invention comprises the electrode for a photoelectric conversion device of the present invention, a p-layer organic semiconductor made of a hole transport material provided on one electrode, and an electron transport material provided on the other electrode.
  • an n-layer organic semiconductor, and the p-layer organic semiconductor and the n-layer organic semiconductor are alternately formed on the same surface.
  • the photoelectric conversion device of the present invention includes the above-mentioned electrode for a photoelectric conversion device, an n-layer organic semiconductor made of an electron transport material provided on one electrode, and a p made of a hole transport material provided on the other electrode.
  • a p-layer organic semiconductor and an n-layer organic semiconductor are alternately formed on the same surface.
  • the p-layer organic semiconductor and the n-layer organic semiconductor are covered with a transparent protective layer.
  • an electrode for a photoelectric conversion device is formed on an insulating base material having a plurality of through holes according to a pattern, and the base material surface while filling the through holes of the base material with a conductive material
  • one electrode is mutually connected by the electroconductive film formed in the back surface of a base material.
  • one electrode has the protrusion part protruded from the surface of the base material.
  • the external connection part of one electrode is provided on the back surface of the base material, and the external connection part of the other electrode is provided on the surface of the base material.
  • One electrode and the other electrode can be formed of either Cu or Al.
  • the photoelectric conversion device of the present invention includes the above-described electrode for a photoelectric conversion device, a p-layer organic semiconductor made of a hole transport material provided on one electrode, and an n transport material made of an electron transport material provided on the other electrode.
  • a p-layer organic semiconductor and an n-layer organic semiconductor are alternately formed on the same surface.
  • the p-layer organic semiconductor and the n-layer organic semiconductor are covered with a transparent protective layer.
  • one electrode functioning as a p-type electrode and the other electrode functioning as an n-type electrode can be formed on one surface side of the photoelectric conversion device, There is no need to provide an electrode on the surface to be irradiated.
  • This electrode for a photoelectric conversion device can be produced on a substrate having no flexibility or a substrate having flexibility. Since an organic semiconductor can be provided on the electrode by coating, the manufacturing process is not complicated, and the electrode can be manufactured at a low cost.
  • Photoelectric conversion device 2 Electrode for photoelectric conversion device 3, 4: Electrode 5: Photoelectric conversion layer 6: p-layer organic semiconductor 7: n-layer organic semiconductor 8: protective layer 9: light 10: photoelectric conversion device 11: Substrate 12: Electrode for photoelectric conversion device 13: One electrode 14: The other electrode 13a, 14a: Electrode finger 13b, 14b: Connection electrode 13c: Lead-out electrode 13d, 14d: Connection terminal with external wiring 15: P layer Organic semiconductor 16: n-layer organic semiconductor 17: protective layer 18: photoelectric conversion layer 19: light 20: photoelectric conversion device 21: base material 21a: through hole 22 of base material: electrode 23 for photoelectric conversion device: one electrode 23a: Electrode body (dot electrode) 23b: Filling part (via conductor part) 23c: Wiring electrode portion 23d: External connection portion 24: Other electrode 24d: Connection portion with external wiring (external connection portion) 25: p-layer organic semiconductor 26: n-layer organic semiconductor 27: protective layer 28: conductive material 29: gap
  • the photoelectric conversion device will be described assuming a solar cell as a device that converts light into electric energy, but the present invention can be similarly applied to a device that converts electric energy into light energy.
  • FIG. 1 is a cross-sectional view of a photoelectric conversion device 1 according to the first embodiment of the present invention.
  • a photoelectric conversion device 1 according to an embodiment of the present invention includes a pair of electrodes 3 and 4 arranged side by side, and a photoelectric conversion layer 5 that covers the pair of electrodes 3 and 4. I have.
  • the one electrode 3 and the other electrode 4 are provided side by side on the same surface, for example, on the substrate, with a predetermined distance from each other.
  • a p-layer organic semiconductor 6 made of a hole transport material is provided on one electrode 3.
  • An n-layer organic semiconductor 7 made of an electron transport material is provided on the other electrode 4.
  • the p-layer organic semiconductor 6 and the n-layer organic semiconductor 7 are arranged laterally adjacent to each other to form a pn junction.
  • the p-layer organic semiconductor 6 and the n-layer organic semiconductor 7 include the pn junction surface.
  • a protective layer 8 is provided so as to cover the entire surface.
  • the p-layer organic semiconductor 6 is formed of a hole transport material.
  • a hole transport material in addition to triphenylamine (TAPC) represented by the chemical formula (1), TPD and other aromatic amines which are dimers of triphenylamine represented by the chemical formula (2), the chemical formula (3) ⁇ -NPD represented by formula (4), (DTP) DPPD represented by formula (4), m-MTDATA represented by formula (5), HTM1 represented by formula (6), 2-TNATA represented by formula (7), TPTE1 represented by chemical formula (8), TCTA represented by chemical formula (9), NTPA represented by chemical formula (10), spiro-TAD represented by chemical formula (11), TFREL represented by chemical formula (12), etc. are used. .
  • the n-layer organic semiconductor 7 is formed of an electron transport material.
  • the electron transport material include Alq 3 represented by the chemical formula (13), BCP represented by the chemical formula (14), an oxadiazole derivative represented by the chemical formula (15), and an oxadiazole dimer represented by the chemical formula (16).
  • Alq 3 represented by the chemical formula (13)
  • BCP represented by the chemical formula (14)
  • triazole derivative represented by chemical formula (18) phenylquinoxaline derivative represented by chemical formula (19), silole derivative represented by chemical formula (20), and the like.
  • the protective layer 8 is formed of a resin or the like, for example, as long as it is a material that transmits light 9 such as sunlight.
  • the same surface may be either a virtual surface or a substrate surface, but when a pair of electrodes 3 and 4 is formed on a substrate surface, it is a flexible substrate that can be bent even if it is a flat substrate. There may be.
  • An appropriate method such as vapor deposition, sputtering, or plating is used to form the electrode. Photolithographic techniques may be used as necessary.
  • One electrode 3 and the other electrode 4 are formed by the same process.
  • a hole transport material to be the p-layer organic semiconductor 6 is applied to a predetermined portion, for example, one electrode 3.
  • a printing method using an inkjet printer can be applied.
  • an electron transport material to be the n-layer organic semiconductor 7 is applied between the p layer and the p layer, for example, the other electrode 4.
  • a printing technique using an inkjet printer can be used for coating.
  • a pn junction is formed by the p-layer organic semiconductor 6 and the n-layer organic semiconductor 7.
  • the n-layer organic semiconductor 7 may be applied, and then the p-layer organic semiconductor 6 may be applied.
  • the photoelectric conversion device 1 is manufactured by forming the protective layer 8 by painting or the like. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 1 is manufactured.
  • the photoelectric conversion device electrode 2 is formed such that one electrode 3 functioning as a p-type electrode and the other electrode 4 functioning as an n-type electrode are arranged side by side.
  • An alternating array planar electrode structure is formed. Therefore, it is not necessary to provide a transparent electrode on the organic semiconductor.
  • the photoelectric conversion device 1 can be manufactured on a non-flexible substrate such as a glass substrate or on a flexible substrate. Since an organic semiconductor can be provided on the electrode by coating, the manufacturing process is not complicated, and the organic semiconductor can be manufactured at low cost.
  • FIG. 2 is a cross-sectional view of a photoelectric conversion device according to the second embodiment of the present invention.
  • the photoelectric conversion device 10 according to the second embodiment of the present invention includes an insulating base material 11 and one electrode as a photoelectric conversion device electrode 12 formed on the surface of the base material 11. 13 and the other electrode 14, a p-layer organic semiconductor 15 made of a hole transport material provided on one electrode 13, and an n-layer organic semiconductor 16 made of an electron transport material provided on the other electrode 14. And a protective layer 17 provided so as to cover the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16.
  • the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 form a pn junction.
  • a photoelectric conversion layer 18 is formed by the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16.
  • one electrode 13 and the other electrode 14 are formed on the surface of the substrate 11 as the photoelectric conversion device electrode 12, and the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 are photoelectrically connected. It is formed side by side on the conversion device electrode 12. Therefore, it is not necessary to provide an electrode on the surface on which the light 19 is incident as in Patent Document 2, and it is not necessary to use a rare metal as a material because a transparent electrode is not provided on the light irradiation side.
  • the photoelectric conversion device electrode 12 can be formed of Cu, Al, or the like.
  • the base material 11 can be applied to various types such as a glass substrate, a resin substrate, and a printed board.
  • a resin substrate or the like is used as the base material 11, the mounting surface of the photoelectric conversion device may not be a flat surface but may be a curved surface.
  • FIG. 3 is a plan view showing an electrode structure in the photoelectric conversion device shown in FIG. 2, and FIG. 4 is an enlarged view of a region A in FIG.
  • one electrode 13 and the other electrode 14 are configured as comb electrodes.
  • the comb-tooth electrode has a structure in which a plurality of electrode fingers 13a and 14a arranged in a comb-like shape in parallel at an appropriate interval are electrically connected at one end by connection electrodes 13b and 14b.
  • connection electrode 13b and the other connection electrode 14b are arranged opposite to each other, and the electrode fingers 13a and 14a are arranged within a distance, so that the electrode finger 13a of one electrode and the electrode of the other electrode The fingers 14a are alternately arranged.
  • an interdigital electrode is formed by one electrode 13 and the other electrode 14.
  • the interdigital electrode is composed of comb electrodes interleaved with each other, and the electrode fingers 13a and electrode fingers 14a of the comb electrodes are alternately arranged.
  • One electrode 13 and the other electrode 14 are respectively connected to electrode fingers 13a and 14a, connection electrodes 13b and 14b for connecting one end thereof, and one end of the connection electrodes 13b and 14b for connection to an external wiring. It has the routing electrodes 13c and 14c extending to the terminals 13d and 14d.
  • each electrode finger 13a, 14a is formed extending in the left-right direction, and the electrode finger 13a and the electrode finger 14a are alternately arranged in a predetermined direction in a direction substantially perpendicular to the extending direction. The same number is arranged at intervals.
  • the left end of each electrode finger 13a is connected to the connection electrode 14b, and the lead-out electrode 13c extends from the lower end of the connection electrode 14b to the connection terminal 13d with the external wiring along the aforementioned extending direction.
  • the right end of each electrode finger 14a is connected to the connection electrode 14b, and a connection terminal 14d for external wiring is formed at the lower end of the connection electrode 14b. In other words, depending on the position of the connection terminal with the external wiring, the lead electrode may not be necessary.
  • the p-layer organic semiconductor 15 is formed on at least the electrode finger 13 a of the one electrode 13, and the n-layer organic semiconductor 16 is formed on at least the electrode finger 14 a of the other electrode 14. Therefore, the electrode finger 13a of one electrode 13 functions as a p-type electrode, and the electrode finger 14a of the other electrode 14 functions as an n-type electrode.
  • the photoelectric conversion layer 18 is comprised by forming the organic semiconductors 15 and 16.
  • the p-layer organic semiconductor 15 is formed of various hole transport materials exemplified in the first embodiment.
  • the n-layer organic semiconductor 16 is formed of various electron transport materials exemplified in the first embodiment.
  • the protective layer 17 is formed of, for example, a resin or the like as long as it is a material that transmits irradiation light such as sunlight.
  • An appropriate method such as vapor deposition, sputtering, or plating is used for electrode formation. Photolithographic techniques may be used as necessary.
  • One electrode 13 and the other electrode 14 are formed by the same process.
  • a hole transport material to be the p-layer organic semiconductor 15 is applied to a predetermined portion, for example, one electrode 13 by a printing method using, for example, an ink jet printer.
  • an electron transport material to be the n-layer organic semiconductor 16 is applied between the p layer and the p layer, for example, the other electrode 14.
  • a printing technique using an inkjet printer can be used for the application.
  • a pn junction is formed by the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16.
  • the n-layer organic semiconductor 16 may be applied, and then the p-layer organic semiconductor 15 may be applied.
  • the photoelectric conversion device 10 is manufactured by forming the protective layer 17 by painting or the like. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 10 illustrated in FIG. 2 is manufactured.
  • a p-layer organic semiconductor is stacked on one electrode and an n-layer organic semiconductor is stacked thereon to form a pn junction as in the prior art.
  • a transparent electrode is sequentially laminated as the other electrode to form a photoelectric conversion device. That is, one electrode 13 functioning as a p-type electrode and the other electrode 14 functioning as an n-type electrode are alternately arranged on the same plane. Therefore, it is not necessary to provide a transparent electrode on the organic semiconductor.
  • the photoelectric conversion device 10 can be manufactured on a non-flexible substrate such as a glass substrate or a flexible substrate. Since an organic semiconductor can be provided on the electrode by coating, the manufacturing process is not complicated, and the organic semiconductor can be manufactured at low cost.
  • FIG. 5 is a cross-sectional view of a photoelectric conversion device according to the third embodiment of the present invention.
  • an insulating base material 21 having a plurality of through holes 21 a according to a pattern and the through holes 21 a of the base material 21 are filled with a conductive material 28 and exposed to the surface of the base material 21.
  • the other electrode 24 provided with, for example, a gap 29 so as not to contact the one electrode 23 on the surface of the base material 21, and provided on the one electrode 23 a p-layer organic semiconductor 25, an n-layer organic semiconductor 26 provided on the other electrode 24, a protective layer 27 provided to cover the p-layer organic semiconductor 25 and the n-layer organic semiconductor 26, Consists of.
  • the one electrode 23 and the other electrode 24 are formed so as to be alternately arranged on the upper surface side of the base material 21 in the direction in which the surface expands, and constitute the photoelectric conversion device electrode 22.
  • the p-layer organic semiconductor 25 and the n-layer organic semiconductor 26 are alternately stacked on the electrodes 23 and 24 to form the photoelectric conversion layer 30. Therefore, the protective layer 26 can be disposed on the surface side on which the light 31 is incident without providing an electrode as in Patent Document 2. Thereby, it is not necessary to use a rare metal as a material so that the electrode has optical transparency.
  • One electrode 23 and the other electrode 24 can use Cu, Al, or the like.
  • the interface between the one electrode 23 and the photoelectric conversion layer 30 and the interface between the other electrode 24 and the photoelectric conversion layer 30 are not only arranged on the same plane, Since it can arrange
  • the external connection portion 23d of one electrode 23 is provided on the back surface of the base material 21, the external connection portion 24d of the other electrode 24 is provided on the surface of the base material 21, and the external connection portions 23d and 24d are provided. Provided with the base material 21 in between. Therefore, one external connection terminal can be connected to the external connection portions 23d and 24d. This external connection terminal forms two conductive paths.
  • the base material 21 can be various types such as a ceramic substrate such as a glass substrate, a resin substrate, a printed circuit board, and the like.
  • a resin substrate or the like is used as the base material 21, the mounting surface of the photoelectric conversion device 20 may not be a flat surface but may be a curved surface.
  • One electrode 23 will be described. As shown in FIG. 5, with respect to one electrode 23, the through hole 21 a of the base material 21 is filled with the conductive material 28 and one end thereof is exposed at least on the surface of the base material 21. It becomes the main body 23a.
  • the conductive material 28, particularly the filling portion 23b, may be referred to as a via conductor portion.
  • FIG. 6 is a plan view showing an electrode structure in the photoelectric conversion device shown in FIG. 5, and FIG. 7 is an enlarged view of a region B in FIG.
  • dot-like electrode main body portions 23 a are arranged on the surface of the base material 21 at intervals in the row direction, and they are also arranged at intervals in the column direction.
  • the electrode main body portions 23a are formed at intervals in each row, and the odd-numbered electrode main body portions 23a and the even-numbered electrode main body portions 23a are in the row direction. It is staggered and is provided alternately. That is, they are not aligned in the column direction.
  • the electrode main body portions 23a may be aligned in the row direction and the column direction, and may be arranged in a matrix at intervals.
  • each electrode main body 23 a preferably has its tip projecting from the surface of the substrate 21.
  • An organic semiconductor dot is formed on the protruding tip by coating. Since the tip of the electrode main body portion 23a protrudes from the surface of the substrate 21, the connection between the n-layer organic conductor 26 and the electrode main body portion 23a is ensured.
  • One electrode 23 extends from the electrode main body portion 23 a protruding from the surface of the base material 21 to the back surface of the base material 21 by a filling portion 28 b in which the through hole 21 a of the base material 21 is filled with the conductive material 28.
  • the filling portions 23b are electrically connected to each other by a wiring electrode portion 23c formed on the back surface of the substrate 21.
  • An end portion of the wiring electrode portion 23c serves as an external connection portion 23d.
  • the filling portions 23b can be electrically connected to each other according to the planar shape.
  • the other electrode 24 will be described. Corresponding to each electrode body 23a of one electrode 23 being arranged in a dot shape on the surface of the substrate 21, the other electrode 24 is not in contact with each electrode body 23a. Further, a conductive layer is formed on the surface of the base material 21 so as to surround each electrode main body 23a. That is, the other electrode 24 is formed so as to surround each electrode main body 23 a on the same surface as the surface of the base 21 on which the electrode main body 23 a of one electrode 23 is provided on the surface of the base 21. The parts of the other electrodes 24 arranged with the gaps 29 provided in the electrode bodies 23a are connected to each other. Further, the peripheral edge portion of the other electrode 24 functions as a connection portion 24d with an external wiring.
  • the organic semiconductors 25 and 26 are provided on the one electrode 23 and the other electrode 24, respectively.
  • a p-layer organic semiconductor 25 is formed on the electrode body 23 a of one electrode 23, and an n-layer organic semiconductor 26 is formed on the other electrode 24. . Therefore, the electrode body 23a of one electrode 23 functions as a p-type electrode, and the portion of the other electrode 24 covered with the n-type organic semiconductor 26 functions as an n-type electrode.
  • an n-layer organic semiconductor is formed on the electrode body 23 a of one electrode 23, and a p-layer organic semiconductor is formed on the other electrode 24. It may be formed.
  • the electrode body portion 23a of one electrode 23 functions as an n-type electrode, and the portion of the other electrode 24 covered with a p-type organic semiconductor functions as a p-type electrode.
  • the p-layer organic semiconductor 25 is formed of various hole transport materials exemplified in the first embodiment.
  • the n-layer organic semiconductor 26 is formed of various electron transport materials exemplified in the first embodiment.
  • a photoelectric conversion layer 30 is formed by the p-layer organic semiconductor 26 and the n-layer organic semiconductor 25.
  • the protective layer 27 may be formed of, for example, a resin or the like as long as it is a material that transmits light 31 such as sunlight.
  • the metal in a portion where one electrode and the other electrode are not formed is removed by etching or the like, and the one electrode and the other A seed electrode is formed as a source of the electrode.
  • one electrode and the other electrode may be formed by a printing method without using the plating process.
  • a hole transport material to be the p-layer organic semiconductor 25 is applied to a predetermined portion, for example, one electrode 23 by, for example, a printing method using an ink jet printer.
  • an electron transport material to be the n-layer organic semiconductor 26 is applied between the p layer and the p layer, for example, the other electrode 24.
  • a printing technique using an ink jet printer may be used for coating.
  • a pn junction is formed by the p-layer organic semiconductor 25 and the n-layer organic semiconductor 26.
  • the n-layer organic semiconductor 26 may be applied, and then the p-layer organic semiconductor 25 may be applied.
  • the photoelectric conversion device 20 is manufactured by forming the protective layer 27 by painting or the like. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 5 is manufactured.
  • the third embodiment of the present invention may be appropriately changed depending on device performance, design, and the like.
  • the pattern in plan view of one electrode 23 and the other electrode 24 is not limited to that shown in FIG. 7 and can be changed as appropriate.
  • the electrode body 23a of one electrode 23 is rectangular in plan view, but may be a triangle, polygon, circle, ellipse, or other geometric pattern.
  • FIG. 8 is a plan view showing a modification of the photoelectric conversion device electrode.
  • the through hole 21a is formed as a rhombus in plan view on the base material 21, the electrode body 23a of one electrode 23 is formed in a rhombus, and the other electrode is formed as a pattern in which rhombus similar to the electrode body 23a is arranged in a matrix. May be.
  • the one electrode 23 and the other electrode 24 are separated from each other as in the above configuration example.
  • the area of each electrode may be a geometric pattern that is uniform between the p-type electrode and the n-type electrode.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention a trait à une électrode (22) destinée à un dispositif de conversion photoélectrique, laquelle électrode est disposée d'un côté d'une couche de conversion photoélectrique (30) et est conçue en agençant une électrode (23) tenant lieu d'électrode de type P et une autre électrode (24) tenant lieu d'électrode de type N sur sensiblement la même surface. Il est par conséquent possible de fournir divers types de dispositifs de conversion photoélectrique (20) sans utiliser de matériau d'électrode transparent.
PCT/JP2012/072998 2011-09-14 2012-09-09 Électrode destinée à un dispositif de conversion photoélectrique, et dispositif de conversion photoélectrique Ceased WO2013039019A1 (fr)

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JP2013533648A JP5881050B2 (ja) 2011-09-14 2012-09-09 光電変換デバイス

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
PCT/JP2011/071054 WO2013038540A1 (fr) 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique et dispositif de conversion photoélectrique utilisant ladite électrode
JPPCT/JP2011/071049 2011-09-14
PCT/JP2011/071050 WO2013038536A1 (fr) 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique, et dispositif de conversion photoélectrique utilisant ladite électrode
PCT/JP2011/071049 WO2013038535A1 (fr) 2011-09-14 2011-09-14 Dispositif de conversion photoélectrique
JPPCT/JP2011/071054 2011-09-14
JPPCT/JP2011/071050 2011-09-14

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WO2013039019A1 true WO2013039019A1 (fr) 2013-03-21

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WO2016105186A1 (fr) * 2014-12-23 2016-06-30 Stichting Energieonderzoek Centrum Nederland Procédé de fabrication d'une grille de collecte de courant pour cellules solaires
WO2017056082A1 (fr) * 2015-10-02 2017-04-06 Solarpaint Ltd. Agencement d'électrodes et son procédé de fabrication
KR101869270B1 (ko) * 2018-01-04 2018-06-21 김상관 엘이디 신호등
CN109423602A (zh) * 2017-09-01 2019-03-05 株式会社爱发科 掩膜板及成膜方法
EP3357101A4 (fr) * 2015-10-02 2019-06-12 Alliance for Sustainable Energy, LLC Dispositifs photovoltaïques en pérovskite à hétérojonction et leurs procédés de fabrication
US20200083298A1 (en) * 2018-09-12 2020-03-12 Kabushiki Kaisha Toshiba Radiation detector
JP2021101461A (ja) * 2019-12-24 2021-07-08 西松建設株式会社 光電変換素子

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JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法
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WO2016105186A1 (fr) * 2014-12-23 2016-06-30 Stichting Energieonderzoek Centrum Nederland Procédé de fabrication d'une grille de collecte de courant pour cellules solaires
NL2014040B1 (en) * 2014-12-23 2016-10-12 Stichting Energieonderzoek Centrum Nederland Method of making a curent collecting grid for solar cells.
RU2709421C2 (ru) * 2014-12-23 2019-12-17 Недерландсе Органисати Вор Тугепаст-Натюрветенсхаппелейк Ондерзук Тно Способ изготовления токоотводящей сетки для фотоэлементов
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WO2017056082A1 (fr) * 2015-10-02 2017-04-06 Solarpaint Ltd. Agencement d'électrodes et son procédé de fabrication
EP3357101A4 (fr) * 2015-10-02 2019-06-12 Alliance for Sustainable Energy, LLC Dispositifs photovoltaïques en pérovskite à hétérojonction et leurs procédés de fabrication
US10734165B2 (en) 2015-10-02 2020-08-04 Alliance For Sustainable Energy, Llc Heterojunction perovskite photovoltaic devices and methods of making the same
CN109423602A (zh) * 2017-09-01 2019-03-05 株式会社爱发科 掩膜板及成膜方法
KR101869270B1 (ko) * 2018-01-04 2018-06-21 김상관 엘이디 신호등
US20200083298A1 (en) * 2018-09-12 2020-03-12 Kabushiki Kaisha Toshiba Radiation detector
JP2021101461A (ja) * 2019-12-24 2021-07-08 西松建設株式会社 光電変換素子
JP7418736B2 (ja) 2019-12-24 2024-01-22 西松建設株式会社 光電変換素子

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