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WO2013038540A1 - Électrode pour dispositifs de conversion photoélectrique et dispositif de conversion photoélectrique utilisant ladite électrode - Google Patents

Électrode pour dispositifs de conversion photoélectrique et dispositif de conversion photoélectrique utilisant ladite électrode Download PDF

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Publication number
WO2013038540A1
WO2013038540A1 PCT/JP2011/071054 JP2011071054W WO2013038540A1 WO 2013038540 A1 WO2013038540 A1 WO 2013038540A1 JP 2011071054 W JP2011071054 W JP 2011071054W WO 2013038540 A1 WO2013038540 A1 WO 2013038540A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
organic semiconductor
photoelectric conversion
layer
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/071054
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English (en)
Japanese (ja)
Inventor
善孝 長草
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor East Japan Inc
Original Assignee
Toyota Motor East Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor East Japan Inc filed Critical Toyota Motor East Japan Inc
Priority to PCT/JP2011/071054 priority Critical patent/WO2013038540A1/fr
Priority to JP2013533648A priority patent/JP5881050B2/ja
Priority to PCT/JP2012/072998 priority patent/WO2013039019A1/fr
Publication of WO2013038540A1 publication Critical patent/WO2013038540A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an electrode for a photoelectric conversion device used for a photoelectric conversion device and a photoelectric conversion device using the same.
  • a photoelectric conversion device is a device that converts light into electrical energy and a device that converts electrical energy into light.
  • Examples of the former include solar cells, and examples of the latter include light emitting diodes.
  • the Si solar cell will be described by taking a single crystal Si solar cell as an example.
  • a pn junction is formed by using a surface layer of the wafer as an n-type semiconductor by vapor phase diffusion or implantation of n-type impurity ions into a p-type single crystal wafer.
  • a solar cell having a sandwich structure is manufactured by forming a front electrode and a back electrode.
  • a chalcopyrite solar cell will be described as an example. This is a solar cell provided with a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing Group I, Group III and Group VI elements as a p-type light absorption layer (for example, Patent Documents) 1).
  • a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing Group I, Group III and Group VI elements as a p-type light absorption layer (for example, Patent Documents) 1).
  • This solar cell with a CIGS layer generally prevents a back electrode layer, which is a positive electrode made of a Mo metal layer, on a glass substrate such as a soda lime glass (SLG) substrate, and Na unevenness caused by the SLG substrate.
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • SLG soda lime glass
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • a glass substrate such as a soda lime glass (SLG) substrate
  • SLG soda lime glass
  • the CIGS light absorbing layer is obtained by the following process. That is, the substrate itself provided with the In layer and the Cu—Ga layer as a precursor is accommodated in the annealing chamber and preheated. Thereafter, the precursor is converted into a CIGS layer by raising the temperature of the chamber to a temperature range of 500 to 520 ° C. while introducing H 2 Se gas through a gas introducing tube inserted into the annealing chamber.
  • organic semiconductor thin film solar cells are attracting attention as solar cells suitable for mass production because they can be formed by a coating method.
  • the organic solar cell has a so-called bulk heterojunction structure in which an organic donor material and an organic acceptor material are mixed.
  • an organic thin-film solar cell capable of forming a cathode on a flexible substrate by coating and a low-temperature process has been developed (for example, Patent Document 2).
  • an organic semiconductor thin film solar cell has a structure in which an anode, a photoelectric conversion layer having a bulk heterojunction structure, and a cathode are sequentially laminated on one surface of a substrate, and is composed of silver oxide and a reducing agent.
  • a cathode and an electron transport layer doped with an organic metal are coated and laminated in the vicinity of the cathode, not only the cathode is formed at a low temperature, but also the bonding between the organic metal doped layer and the cathode is improved.
  • the light irradiation side electrode is required to have good light transmittance and low electrical resistance.
  • the light irradiation side electrode needs to be formed by vapor deposition or plating of an expensive rare metal.
  • the process steps are complicated accordingly.
  • an object of the present invention is to provide an electrode structure for a photoelectric conversion device that does not require light transmittance as an electrode material and a photoelectric conversion device using the same.
  • an electrode for a photoelectric conversion device is formed on an insulating base material having a plurality of through holes according to a pattern and a surface of the base material while filling the through holes of the base material with a conductive material.
  • one electrode is connected to each other by a conductive film formed on the back surface of the base material.
  • one of the electrodes has a protrusion protruding from the surface of the substrate.
  • one electrode and the other electrode are formed of either Cu or Al.
  • the photoelectric conversion device of the present invention is provided with a p-layer organic semiconductor made of a hole transport material on one of the electrodes for the optoelectronic device of the present invention, and the other
  • An n-layer organic semiconductor made of an electron transport material is provided on the electrode, and a p-layer organic semiconductor and an n-layer organic semiconductor are alternately formed on the same surface.
  • the photoelectric conversion device of the present invention is provided with an n-layer organic semiconductor made of an electron transport material on one of the electrodes for the optoelectronic device of the present invention, and the other A p-layer organic semiconductor made of a hole transport material is provided on the electrode, and the p-layer organic semiconductor and the n-layer organic semiconductor are alternately formed on the same surface.
  • the p-layer organic semiconductor and the n-layer organic semiconductor are covered with a transparent protective layer.
  • a p-layer organic semiconductor is laminated on one electrode and an n-layer organic semiconductor is laminated thereon to form a pn junction, and a transparent electrode is formed on the n-layer organic semiconductor as the other electrode.
  • the photoelectric conversion device is configured by sequentially stacking, according to the present invention, one electrode functioning as a p-type electrode and the other electrode functioning as an n-type electrode are formed on the same surface. Therefore, the transparent electrode material conventionally required as the electrode material becomes unnecessary.
  • This alternating array of planar electrode structures can be fabricated on a non-flexible or flexible substrate. Since an organic semiconductor can be provided on the electrode by coating, the manufacturing process is not complicated, and the electrode can be manufactured at a low cost.
  • FIG. 1 It is sectional drawing of the photoelectric conversion device which concerns on embodiment of this invention. It is a top view of the electrode for photoelectric conversion devices shown in FIG. It is an enlarged view of the area
  • the photoelectric conversion device will be described assuming that a solar cell converts light into electric energy.
  • the present invention can also be applied to a device that converts electric energy into light energy.
  • FIG. 1 is a cross-sectional view of a photoelectric conversion device according to an embodiment of the present invention.
  • the photoelectric conversion device 1 according to the embodiment of the present invention fills an insulating base material 11 having a plurality of through holes 11 a according to a pattern and the through holes 11 a of the base material 11 with a conductive material 17.
  • the p-layer organic semiconductor 14 provided on one electrode 12, the n-layer organic semiconductor 15 provided on the other electrode 13, and the p-layer organic semiconductor 14 and the n-layer organic semiconductor 15 are covered.
  • a protective layer 16 provided as described above.
  • the p-layer organic semiconductor 14 and the n-layer organic semiconductor 15 are arranged so as to be alternately arranged in the direction in which the upper surface of the substrate 11 spreads. Overlaid on top.
  • the one electrode 12 and the other electrode 13 constituting the electrode for the photoelectric conversion device also spread in the surface on the upper surface side of the substrate 11. It is formed so as to be arranged alternately. Therefore, the surface on which light is incident can be made the protective layer 16 without providing an electrode as in Patent Document 2, and as a result, a rare metal for a transparent electrode provided on the light irradiation side as in Patent Document 2. Need not be used as a material.
  • Cu, Al, or the like can be used for the electrode for the photoelectric conversion device. Further, in this embodiment, not only the one electrode 12 and the other electrode 13 are arranged on the same surface, but also the extraction of the wiring can be arranged on each of the opposing surfaces of the substrate, so that the structure of the extraction wiring is not complicated. .
  • the base material 11 can be applied to various materials such as a ceramic substrate such as a glass substrate, a resin substrate, and a printed circuit board.
  • a resin substrate or the like is used as the base material 11
  • the mounting surface of the photoelectric conversion device 1 may be a curved surface instead of a flat surface.
  • One electrode 12 will be described. As shown in FIG. 1, with respect to one electrode 12, the conductive material 17 is filled in the through hole 11 a of the base material 11 and one end thereof is exposed at least on the surface of the base material 11. Part 12a.
  • FIG. 2 is a plan view of the photoelectric conversion device electrode shown in FIG. 1, and FIG. 3 is an enlarged view of a portion A in FIG.
  • dot-shaped electrode main body portions 12 a are arranged on the surface of the base material 11 at intervals in the row direction, and they are also arranged at intervals in the column direction.
  • the electrode main body portions 12a are formed at intervals in each row, and the odd-numbered electrode main body portions 12a and the even-numbered electrode main body portions 12a are in the row direction. It is staggered and is provided alternately. That is, they are not aligned in the column direction.
  • the electrode main body portions 12a may be aligned in the row direction and the column direction, and may be arranged in a matrix at intervals.
  • each electrode main body 12 a preferably has its tip projecting from the surface of the substrate 11.
  • An organic semiconductor dot is formed on the protruding portion by coating, but the connection between the organic conductor and the electrode body 12a is ensured because the electrode body 12a projects from the surface of the substrate 11. It is.
  • Each electrode 12 extends from the electrode body portion 12 a protruding from the surface of the base material 11 to the back surface of the base material 11 by a filling portion 12 b in which the through hole 11 a of the base material 11 is filled with the conductive material 17.
  • the filling portions 12b are electrically connected by a wiring electrode portion 12c formed on the back surface of the base material 11. An end portion of the wiring electrode portion 12c becomes the external connection portion 12d.
  • the filling portions 12b can be electrically connected according to the planar shape.
  • the other electrode 13 will be described. Corresponding to each electrode body 12a of one electrode 12 being arranged in a dot shape on the surface of the substrate 11, the other electrode 13 is not in contact with each electrode body 12a. Further, a conductive material 17 layer is formed on the surface of the substrate 11 so as to surround each electrode main body 12a. That is, the other electrode 13 is formed so as to surround each electrode main body 12 a on the same surface as the surface of the base 11 on which the electrode main body 12 a of one electrode 12 is provided on the surface of the base 11. The peripheral portion of the other electrode 13 functions as a connection portion 13d with an external wiring.
  • Organic semiconductors 14 and 15 are provided on one electrode 12 and the other electrode 13 formed in such an electrode structure.
  • a p-layer organic semiconductor 14 is formed on the electrode body 12 a of one electrode 12, and an n-layer organic semiconductor 15 is formed on the other electrode 13. . Therefore, the electrode body 12a of one electrode 12 functions as a p-type electrode, and the portion covered with the n-type organic semiconductor 15 of the other electrode 13 functions as an n-type electrode.
  • an n-layer organic semiconductor is formed on the electrode body 12 a of one electrode 12, and a p-layer organic semiconductor is formed on the other electrode 13. It may be formed.
  • the electrode body 12a of one electrode 12 functions as an n-type electrode, and the portion of the other electrode 13 covered with the p-type organic semiconductor functions as a p-type electrode.
  • the p-layer organic semiconductor 15 is formed of a hole transport material.
  • a hole transport material in addition to triphenylamine (TAPC) represented by the chemical formula (1), TPD and other aromatic amines which are dimers of triphenylamine represented by the chemical formula (2), the chemical formula (3) ⁇ -NPD represented by formula (4), (DTP) DPPD represented by formula (4), m-MTDATA represented by formula (5), HTM1 represented by formula (6), 2-TNATA represented by formula (7), TPTE1 represented by the chemical formula (8), TCTA represented by the chemical formula (9), NTPA represented by the chemical formula (10), spiro TAD represented by the chemical formula (11), TFREL represented by the chemical formula (12), and the like are used.
  • TAPC triphenylamine
  • the n-layer organic semiconductor 14 is formed of an electron transport material.
  • the electron transport material include Alq 3 represented by the chemical formula (13), BCP represented by the chemical formula (14), an oxadiazole derivative represented by the chemical formula (15), and an oxadiazole dimer represented by the chemical formula (16).
  • the protective layer 16 is formed of a resin or the like, for example, as long as it is a material that transmits irradiation light such as sunlight.
  • the metal on the part where one electrode and the other electrode are not formed is removed by etching or the like, and one electrode and the other A seed electrode is formed as a source of the electrode.
  • one electrode and the other electrode may be formed by a printing method without using the plating process.
  • a hole transport material to be the p-layer organic semiconductor 14 is applied to a predetermined portion, for example, one electrode 12.
  • a printing method using an inkjet printer can be applied.
  • an electron transport material to be the n-layer organic semiconductor 15 is applied between the p layer and the p layer, for example, the other electrode 13.
  • a printing technique using an inkjet printer may be used for coating.
  • a pn junction is formed by the p-layer organic semiconductor 14 and the n-layer organic semiconductor 15.
  • the n-layer organic semiconductor 15 may be applied, and then the p-layer organic semiconductor 14 may be applied.
  • the photoelectric conversion device 1 is manufactured by forming the protective layer 16 by painting or the like. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 1 is manufactured.
  • the embodiment of the present invention may be appropriately changed depending on device performance, design, and the like.
  • the pattern of the one electrode 12 and the other electrode 13 in plan view is not limited to that shown in FIG. 3 and can be changed as appropriate.
  • the electrode body 12a of one electrode 12 is rectangular in plan view, but may be a triangle, polygon, circle, ellipse, or other geometric pattern.
  • FIG. 4 is a plan view showing a modification of the photoelectric conversion device electrode.
  • the through holes 11a are formed in a rhombus shape in plan view
  • the electrode main body portion 12a of one electrode 12 is formed in a rhombus shape
  • the other electrode is formed as a pattern in which rhombus shapes similar to the electrode main body portion 12a are arranged in a matrix. May be.
  • one electrode 12 and the other electrode are separated from each other.
  • the area of each electrode may be a geometric pattern that is uniform between the p-type electrode and the n-type electrode.
  • Photoelectric conversion device 11 Substrate 11a: Substrate through-hole 12: One electrode 12a: Electrode body (dot electrode) 12b: filling portion 12c: wiring electrode portion 12d: external connection portion 13: other electrode 13d: connection portion with external wiring 14: p-layer organic semiconductor 15: n-layer organic semiconductor 16: protective layer 17: conductive material 18 : Gap

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une électrode pour dispositifs de conversion photoélectrique, qui se compose des éléments suivants : un substrat isolant (11) doté d'une pluralité de trous traversants (11a) formant un motif ; une première électrode (12) qui est formée par remplissage d'un trou traversant (11a) du substrat (11) avec un matériau conducteur destiné à être exposé à la surface du substrat (11) ; et une seconde électrode (13) qui est formée à la surface du substrat (11) de manière à être espacée de la première électrode (12). Un dispositif de conversion photoélectrique est conçu pour utiliser cette électrode pour dispositifs de conversion photoélectrique conjointement avec un semi-conducteur organique (14) d'une couche p, prévu sur l'électrode (12), un semi-conducteur organique (15) d'une couche n, prévu sur l'électrode (13), et une couche de protection (16), prévue de manière à couvrir le semi-conducteur organique (14) d'une couche p et le semi-conducteur organique (15) d'une couche n.
PCT/JP2011/071054 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique et dispositif de conversion photoélectrique utilisant ladite électrode Ceased WO2013038540A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2011/071054 WO2013038540A1 (fr) 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique et dispositif de conversion photoélectrique utilisant ladite électrode
JP2013533648A JP5881050B2 (ja) 2011-09-14 2012-09-09 光電変換デバイス
PCT/JP2012/072998 WO2013039019A1 (fr) 2011-09-14 2012-09-09 Électrode destinée à un dispositif de conversion photoélectrique, et dispositif de conversion photoélectrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/071054 WO2013038540A1 (fr) 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique et dispositif de conversion photoélectrique utilisant ladite électrode

Publications (1)

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WO2013038540A1 true WO2013038540A1 (fr) 2013-03-21

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3435418A1 (fr) * 2017-07-25 2019-01-30 Commissariat à l'énergie atomique et aux énergies alternatives Cellule photovoltaïque ewt de type organique ou pérovskite et son procédé de réalisation
US20200083298A1 (en) * 2018-09-12 2020-03-12 Kabushiki Kaisha Toshiba Radiation detector

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172778A (en) * 1981-09-02 1982-10-23 Sharp Corp Solar battery
JP2004103939A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp 直立型超格子、デバイス及び直立型超格子の製造方法。
JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法
WO2008014248A2 (fr) * 2006-07-25 2008-01-31 Applied Materials, Inc. Câblage de modules photovoltaïques à film mince (tf pv) permettant un accroissement d'efficacité
JP2008135657A (ja) * 2006-11-29 2008-06-12 Konica Minolta Holdings Inc 光電変換素子、その製造方法、及び放射線画像検出器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172778A (en) * 1981-09-02 1982-10-23 Sharp Corp Solar battery
JP2004103939A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp 直立型超格子、デバイス及び直立型超格子の製造方法。
JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法
WO2008014248A2 (fr) * 2006-07-25 2008-01-31 Applied Materials, Inc. Câblage de modules photovoltaïques à film mince (tf pv) permettant un accroissement d'efficacité
JP2008135657A (ja) * 2006-11-29 2008-06-12 Konica Minolta Holdings Inc 光電変換素子、その製造方法、及び放射線画像検出器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3435418A1 (fr) * 2017-07-25 2019-01-30 Commissariat à l'énergie atomique et aux énergies alternatives Cellule photovoltaïque ewt de type organique ou pérovskite et son procédé de réalisation
FR3069706A1 (fr) * 2017-07-25 2019-02-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule photovoltaique ewt de type organique ou perovskite et son procede de realisation
US20200083298A1 (en) * 2018-09-12 2020-03-12 Kabushiki Kaisha Toshiba Radiation detector

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