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WO2013038536A1 - Électrode pour dispositifs de conversion photoélectrique, et dispositif de conversion photoélectrique utilisant ladite électrode - Google Patents

Électrode pour dispositifs de conversion photoélectrique, et dispositif de conversion photoélectrique utilisant ladite électrode Download PDF

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Publication number
WO2013038536A1
WO2013038536A1 PCT/JP2011/071050 JP2011071050W WO2013038536A1 WO 2013038536 A1 WO2013038536 A1 WO 2013038536A1 JP 2011071050 W JP2011071050 W JP 2011071050W WO 2013038536 A1 WO2013038536 A1 WO 2013038536A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
photoelectric conversion
layer
organic semiconductor
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/071050
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English (en)
Japanese (ja)
Inventor
善孝 長草
裕之 潮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor East Japan Inc
Original Assignee
Toyota Motor East Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor East Japan Inc filed Critical Toyota Motor East Japan Inc
Priority to PCT/JP2011/071050 priority Critical patent/WO2013038536A1/fr
Priority to JP2013533648A priority patent/JP5881050B2/ja
Priority to PCT/JP2012/072998 priority patent/WO2013039019A1/fr
Publication of WO2013038536A1 publication Critical patent/WO2013038536A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an electrode for a photoelectric conversion device used for a photoelectric conversion device and a photoelectric conversion device using the same.
  • a photoelectric conversion device is a device that converts light into electrical energy and a device that converts electrical energy into light.
  • Examples of the former include solar cells, and examples of the latter include light emitting diodes.
  • the Si solar cell will be described by taking a single crystal Si solar cell as an example.
  • a p-type single crystal wafer is converted into a pn junction by changing the surface layer of the wafer to an n-type semiconductor by vapor phase diffusion or implantation of n-type impurity ions.
  • a pin junction is created.
  • a solar cell having a sandwich structure is manufactured by forming a front electrode and a back electrode.
  • a chalcopyrite solar cell will be described as an example. This is a solar cell provided with a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing Group I, Group III and Group VI elements as a p-type light absorption layer (for example, Patent Documents) 1).
  • a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing Group I, Group III and Group VI elements as a p-type light absorption layer (for example, Patent Documents) 1).
  • This solar cell with a CIGS layer generally prevents a back electrode layer, which is a positive electrode made of a Mo metal layer, on a glass substrate such as a soda lime glass (SLG) substrate, and Na unevenness caused by the SLG substrate.
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • SLG soda lime glass
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • a glass substrate such as a soda lime glass (SLG) substrate
  • SLG soda lime glass
  • the CIGS light absorbing layer is obtained by the following process. That is, the substrate itself provided with the In layer and the Cu—Ga layer as a precursor is accommodated in the annealing chamber and preheated. Thereafter, the precursor is converted into a CIGS layer by raising the temperature of the chamber to a temperature range of 500 to 520 ° C. while introducing H 2 Se gas through a gas introducing tube inserted into the annealing chamber.
  • organic semiconductor thin film solar cells are attracting attention as solar cells suitable for mass production because they can be formed by a coating method.
  • the organic solar cell has a so-called bulk heterojunction structure in which an organic donor material and an organic acceptor material are mixed.
  • an organic thin-film solar cell capable of forming a cathode on a flexible substrate by coating and a low-temperature process has been developed (for example, Patent Document 2).
  • an organic semiconductor thin film solar cell has a structure in which an anode, a photoelectric conversion layer having a bulk heterojunction structure, and a cathode are sequentially laminated on one surface of a substrate, and a silver oxide and a reducing agent
  • the cathode is formed not only at a low temperature, but also the bonding between the organic metal doped layer and the cathode is improved.
  • the light irradiation side electrode is required to have good light transmittance and low electrical resistance.
  • the light irradiation side electrode needs to be formed by vapor deposition or plating of an expensive rare metal.
  • the process steps are complicated accordingly.
  • an object of the present invention is to provide an electrode structure for a photoelectric conversion device that does not require light transmittance as an electrode material and a photoelectric conversion device using the same.
  • the electrode for a photoelectric conversion device of the present invention has one electrode and the other electrode formed on the same surface, and the one electrode functions as a p-type electrode and the other electrode The electrode functions as an n-type electrode.
  • one electrode and the other electrode are composed of comb electrodes having a structure in which a plurality of electrode fingers are electrically connected at one end, and the electrode finger of one electrode and the electrode finger of the other electrode And are lined up alternately.
  • one electrode and the other electrode are formed of either Cu or Al.
  • the photoelectric conversion device of the present invention is provided with a p-layer organic semiconductor made of a hole transport material on one of the electrodes for the photoelectric conversion device of the present invention, and An n-layer organic semiconductor made of an electron transport material is provided on the other electrode, and a p-layer organic semiconductor and an n-layer organic semiconductor are alternately formed on the same surface.
  • the p-layer organic semiconductor and the n-layer organic semiconductor are covered with a transparent protective layer.
  • a p-layer organic semiconductor is laminated on one electrode and an n-layer organic semiconductor is laminated thereon to form a pn junction, and a transparent electrode is formed on the n-layer organic semiconductor as the other electrode.
  • the photoelectric conversion device is configured by sequentially stacking, according to the present invention, one electrode functioning as a p-type electrode and the other electrode functioning as an n-type electrode are formed on the same surface. Therefore, the transparent electrode material conventionally required as the electrode material becomes unnecessary.
  • This alternating array planar electrode structure can be fabricated on a flexible substrate such as a glass substrate. Since an organic semiconductor can be provided on the electrode by coating, the manufacturing process is not complicated, and the organic semiconductor can be manufactured at low cost.
  • the photoelectric conversion device will be described assuming that a solar cell converts light into electric energy.
  • the present invention can also be applied to a device that converts electric energy into light energy.
  • FIG. 1 is a cross-sectional view of a photoelectric conversion device according to an embodiment of the present invention.
  • a photoelectric conversion device 1 according to an embodiment of the present invention includes an insulating base material 11 and one electrode 13 as a photoelectric conversion device electrode 12 formed on the surface of the base material 11.
  • the other electrode 14 the p-layer organic semiconductor 15 made of a hole transport material provided on one electrode 13, and the n-layer organic semiconductor 16 made of an electron transport material provided on the other electrode 14.
  • P layer organic semiconductor 15 and n layer organic semiconductor 16, and protective layer 17 provided so as to cover.
  • the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 form a pn junction.
  • the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 are formed side by side on the photoelectric conversion device electrode 12.
  • one electrode 13 and the other electrode 14 constituting the photoelectric conversion device electrode 12 are formed side by side on the surface of the base material 11, similarly to the organic semiconductor 15 and the organic semiconductor 16. Therefore, it is not necessary to provide an electrode on the light incident surface as in Patent Document 2, and it is unnecessary to use a rare metal for the transparent electrode provided on the light irradiation side as a material as in Patent Document 2. Therefore, as will be described later, the photoelectric conversion device electrode 12 may use Cu, Al, or the like.
  • the base material 11 can be applied to various types such as a glass substrate, a resin substrate, and a printed board.
  • a resin substrate or the like is used as the base material 11, the mounting surface of the photoelectric conversion device may not be a flat surface but may be a curved surface.
  • FIG. 2 is a plan view of the photoelectric conversion device electrode shown in FIG. 1, and FIG. 3 is an enlarged view of a portion A in FIG.
  • one electrode 13 and the other electrode 14 are configured as comb electrodes.
  • the comb-tooth electrode has a structure in which a plurality of electrode fingers 13a and 14a arranged in a comb-like shape in parallel at an appropriate interval are electrically connected at one end by connection electrodes 13b and 14b.
  • One connection electrode 13b and the other connection electrode 14b are arranged to face each other, and the electrode fingers 13a and 14a are arranged within the space between each other, so that the electrode finger 13a of one electrode and the other electrode
  • the electrode fingers 14a are alternately arranged.
  • an interdigital electrode is formed by one electrode 13 and the other electrode 14.
  • the interdigital electrode is composed of comb electrodes interleaved with each other, and the electrode fingers 13a and electrode fingers 14a of the comb electrodes are alternately arranged.
  • One electrode 13 and the other electrode 14 are respectively connected to electrode electrodes 13a, 14a and one end of the connection electrodes 13b, 14b, and one end of the connection electrodes 13b, 14b, and a connection terminal for external wiring And lead-out electrodes 13c and 14c extending to 13d and 14d.
  • the electrode fingers 13 a and 14 a are formed to extend left and right, and the electrode fingers 13 a and the electrode fingers 14 a are alternately spaced at predetermined intervals in a direction substantially orthogonal to the extending direction. The same number is lined up.
  • the left end of each electrode finger 13a is connected to the connection electrode 14b, and the lead-out electrode 13c extends from the lower end of the connection electrode 14b to the connection terminal 13d with the external wiring along the aforementioned extending direction.
  • the right end of each electrode finger 14a is connected to the connection electrode 14b, and a connection terminal 14d for external wiring is formed at the lower end of the connection electrode 14b. In other words, depending on the position of the connection terminal with the external wiring, the lead electrode may not be necessary.
  • Organic semiconductors 15 and 16 are provided on such an electrode structure.
  • a p-layer organic semiconductor 15 is formed on at least the electrode finger 13 a of one electrode 13, and an n-layer organic semiconductor 16 is formed on at least the electrode finger 14 a of the other electrode 14. Therefore, the electrode finger 13a of one electrode 13 functions as a p-type electrode, and the electrode finger 14a of the other electrode 14 functions as an n-type electrode.
  • the p-layer organic semiconductor 15 is formed of a hole transport material.
  • a hole transport material in addition to triphenylamine (TAPC) represented by the chemical formula (1), TPD and other aromatic amines which are dimers of triphenylamine represented by the chemical formula (2), the chemical formula (3) ⁇ -NPD represented by formula (4), (DTP) DPPD represented by formula (4), m-MTDATA represented by formula (5), HTM1 represented by formula (6), 2-TNATA represented by formula (7), TPTE1 represented by the chemical formula (8), TCTA represented by the chemical formula (9), NTPA represented by the chemical formula (10), spiro TAD represented by the chemical formula (11), TFREL represented by the chemical formula (12), and the like are used.
  • TAPC triphenylamine
  • the n-layer organic semiconductor 16 is formed of an electron transport material.
  • the electron transport material include Alq 3 represented by the chemical formula (13), BCP represented by the chemical formula (14), an oxadiazole derivative represented by the chemical formula (15), and an oxadiazole dimer represented by the chemical formula (16).
  • the protective layer 17 is formed of, for example, resin or the like as long as it is a material that transmits irradiation light such as sunlight.
  • a hole transport material to be the p-layer organic semiconductor 15 is applied to a predetermined portion, for example, one electrode 13.
  • a printing method using an inkjet printer can be applied.
  • an electron transport material to be the n-layer organic semiconductor 16 is applied between the p layer and the p layer, for example, the other electrode 14.
  • a printing technique using an inkjet printer can be used for the application.
  • a pn junction is formed by the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16.
  • the n-layer organic semiconductor 16 may be applied, and then the p-layer organic semiconductor 15 may be applied.
  • the photoelectric conversion device 1 is manufactured by forming the protective layer 17 by painting or the like. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 1 is manufactured.
  • Photoelectric conversion device 11 Substrate 12: Photoelectric conversion device electrode 13: One electrode 14: The other electrode 13a, 14a: Electrode finger 13b, 14b: Connection electrode 13c: Lead-out electrodes 13d, 14d: External wiring Connection terminal 15: p-layer organic semiconductor 16: n-layer organic semiconductor 17: protective layer

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dans le dispositif selon la présente invention, une première électrode (13) et une seconde électrode (14) sont formées sur une même surface, l'électrode (13) fonctionne comme une électrode de type p, alors que l'électrode (14) fonctionne comme une électrode de type n. L'électrode (13) et l'électrode (14) sont configurées sous la forme d'une électrode en forme de peigne dont la structure prévoit une pluralité de doigts d'électrode (13a, 14a) reliés par voie électrique au niveau d'une première extrémité, les doigts d'électrode (13a) de l'électrode (13) et les doigts d'électrode (14a) de l'électrode (14) étant agencés de façon alternée. La première électrode et la seconde électrode sont en cuivre ou en aluminium.
PCT/JP2011/071050 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique, et dispositif de conversion photoélectrique utilisant ladite électrode Ceased WO2013038536A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2011/071050 WO2013038536A1 (fr) 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique, et dispositif de conversion photoélectrique utilisant ladite électrode
JP2013533648A JP5881050B2 (ja) 2011-09-14 2012-09-09 光電変換デバイス
PCT/JP2012/072998 WO2013039019A1 (fr) 2011-09-14 2012-09-09 Électrode destinée à un dispositif de conversion photoélectrique, et dispositif de conversion photoélectrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/071050 WO2013038536A1 (fr) 2011-09-14 2011-09-14 Électrode pour dispositifs de conversion photoélectrique, et dispositif de conversion photoélectrique utilisant ladite électrode

Publications (1)

Publication Number Publication Date
WO2013038536A1 true WO2013038536A1 (fr) 2013-03-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200083298A1 (en) * 2018-09-12 2020-03-12 Kabushiki Kaisha Toshiba Radiation detector

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172778A (en) * 1981-09-02 1982-10-23 Sharp Corp Solar battery
JP2004103939A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp 直立型超格子、デバイス及び直立型超格子の製造方法。
JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法
JP2008135657A (ja) * 2006-11-29 2008-06-12 Konica Minolta Holdings Inc 光電変換素子、その製造方法、及び放射線画像検出器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172778A (en) * 1981-09-02 1982-10-23 Sharp Corp Solar battery
JP2004103939A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp 直立型超格子、デバイス及び直立型超格子の製造方法。
JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法
JP2008135657A (ja) * 2006-11-29 2008-06-12 Konica Minolta Holdings Inc 光電変換素子、その製造方法、及び放射線画像検出器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200083298A1 (en) * 2018-09-12 2020-03-12 Kabushiki Kaisha Toshiba Radiation detector

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