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WO2013038535A1 - Dispositif de conversion photoélectrique - Google Patents

Dispositif de conversion photoélectrique Download PDF

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Publication number
WO2013038535A1
WO2013038535A1 PCT/JP2011/071049 JP2011071049W WO2013038535A1 WO 2013038535 A1 WO2013038535 A1 WO 2013038535A1 JP 2011071049 W JP2011071049 W JP 2011071049W WO 2013038535 A1 WO2013038535 A1 WO 2013038535A1
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WO
WIPO (PCT)
Prior art keywords
electrode
layer
organic semiconductor
photoelectric conversion
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/071049
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English (en)
Japanese (ja)
Inventor
善孝 長草
裕之 潮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor East Japan Inc
Original Assignee
Toyota Motor East Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor East Japan Inc filed Critical Toyota Motor East Japan Inc
Priority to PCT/JP2011/071049 priority Critical patent/WO2013038535A1/fr
Priority to JP2013533648A priority patent/JP5881050B2/ja
Priority to PCT/JP2012/072999 priority patent/WO2013039020A1/fr
Priority to PCT/JP2012/072998 priority patent/WO2013039019A1/fr
Priority to JP2013533649A priority patent/JP5957787B2/ja
Publication of WO2013038535A1 publication Critical patent/WO2013038535A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to a photoelectric conversion device.
  • a photoelectric conversion device is a device that converts light into electrical energy and a device that converts electrical energy into light.
  • Examples of the former include solar cells, and examples of the latter include light emitting diodes.
  • the Si solar cell will be described by taking a single crystal Si solar cell as an example.
  • a p-type single crystal wafer is converted into a pn junction by changing the surface layer of the wafer to an n-type semiconductor by vapor phase diffusion or implantation of n-type impurity ions.
  • a pin junction is created.
  • a solar cell having a sandwich structure is manufactured by forming the front electrode and the back electrode.
  • a chalcopyrite solar cell will be described as an example. This is a solar cell provided with a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing elements of Group I, Group III and Group VI as constituent components as a p-type light absorption layer (for example, Patent Documents). 1).
  • a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing elements of Group I, Group III and Group VI as constituent components as a p-type light absorption layer (for example, Patent Documents). 1).
  • This solar cell with a CIGS layer generally prevents a back electrode layer, which is a positive electrode made of a Mo metal layer, on a glass substrate such as a soda lime glass (SLG) substrate, and Na unevenness caused by the SLG substrate.
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • SLG soda lime glass
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • a glass substrate such as a soda lime glass (SLG) substrate
  • SLG soda lime glass
  • the CIGS light absorbing layer is obtained by the following process. That is, the substrate itself provided with the In layer and the Cu—Ga layer as a precursor is accommodated in the annealing chamber and preheated. Thereafter, the precursor is converted into a CIGS layer by raising the temperature of the chamber to a temperature range of 500 to 520 ° C. while introducing H 2 Se gas through a gas introducing tube inserted into the annealing chamber.
  • organic semiconductor thin film solar cells are attracting attention as solar cells suitable for mass production because they can be formed by a coating method.
  • the organic solar cell has a so-called bulk heterojunction structure in which an organic donor material and an organic acceptor material are mixed.
  • an organic thin-film solar cell capable of forming a cathode on a flexible substrate by coating and a low-temperature process has been developed (for example, Patent Document 2).
  • an organic semiconductor thin film solar cell has a structure in which an anode, a photoelectric conversion layer having a bulk heterojunction structure, and a cathode are sequentially laminated on one surface of a substrate, and a silver oxide and a reducing agent
  • a laminated structure in which an electron transport layer doped with an organic metal is applied in the vicinity of the cathode not only the cathode is formed at a low temperature, but also the bonding between the organic metal doped layer and the cathode is improved. It is said.
  • the light irradiation side electrode is required to have good light transmittance and low electrical resistance.
  • the light irradiation side electrode needs to be formed by vapor deposition or plating of an expensive rare metal.
  • the process steps are complicated accordingly.
  • an object of the present invention is to provide a photoelectric conversion device that does not require optical transparency as an electrode material.
  • a photoelectric conversion device of the present invention is a photoelectric conversion device comprising a photoelectric conversion layer that converts light and electric energy, and a pair of electrodes provided on one side of the photoelectric conversion layer.
  • One electrode and the other electrode are provided side by side, a p-layer organic semiconductor made of a hole transport material is provided on the one electrode, and an electron transport is provided on the other electrode.
  • An n-layer organic semiconductor made of a material is provided, the one electrode functions as a p-type electrode, and the other electrode functions as an n-type electrode.
  • the p-layer organic semiconductor and the n-layer organic semiconductor are preferably covered with a transparent protective layer.
  • a p-layer organic semiconductor is laminated on one electrode and an n-layer organic semiconductor is laminated thereon to form a pn junction, and a transparent electrode is formed on the n-layer organic semiconductor as the other electrode.
  • the photoelectric conversion device is configured by sequentially stacking, according to the present invention, one electrode functioning as a p-type electrode and the other electrode functioning as an n-type electrode are formed on the same surface. Therefore, the transparent electrode material conventionally required as the electrode material becomes unnecessary.
  • the present invention can be manufactured on a flexible substrate such as a glass substrate.
  • an organic semiconductor can be provided over the electrode by coating, the manufacturing process is not complicated, and the organic semiconductor can be manufactured at low cost.
  • the photoelectric conversion device will be described assuming that a solar cell converts light into electric energy.
  • the present invention can also be applied to a device that converts electric energy into light energy.
  • FIG. 1 is a cross-sectional view of a photoelectric conversion device 1 according to a first embodiment of the present invention.
  • the photoelectric conversion device 1 according to the embodiment of the present invention includes a pair of electrodes 110 and 120 arranged side by side, and a photoelectric conversion layer 130 that covers the electrodes 110 and 120. I have.
  • the photoelectric conversion layer 130 is provided on one electrode 110, the other electrode 120 disposed side by side on the same plane with a predetermined distance from the one electrode 110, and the positive electrode provided on the one electrode 110. It is composed of a p-layer organic semiconductor 15 made of a hole transport material and an n-layer organic semiconductor 16 made of an electron transport material provided on the other electrode 120. The p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 are arranged adjacent to each other in the lateral direction to form a pn junction. The p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 including the pn junction are formed. A protective layer 17 is provided so as to cover the entire surface.
  • the p-layer organic semiconductor 15 is formed of a hole transport material.
  • a hole transport material in addition to triphenylamine (TAPC) represented by the chemical formula (1), TPD and other aromatic amines which are dimers of triphenylamine represented by the chemical formula (2), the chemical formula (3) ⁇ -NPD represented by formula (4), (DTP) DPPD represented by formula (4), m-MTDATA represented by formula (5), HTM1 represented by formula (6), 2-TNATA represented by formula (7), TPTE1 represented by the chemical formula (8), TCTA represented by the chemical formula (9), NTPA represented by the chemical formula (10), spiro TAD represented by the chemical formula (11), TFREL represented by the chemical formula (12), and the like are used.
  • TAPC triphenylamine
  • the n-layer organic semiconductor 16 is formed of an electron transport material.
  • the electron transport material include Alq 3 represented by the chemical formula (13), BCP represented by the chemical formula (14), an oxadiazole derivative represented by the chemical formula (15), and an oxadiazole dimer represented by the chemical formula (16).
  • the protective layer 17 is formed of, for example, resin or the like as long as it is a material that transmits irradiation light such as sunlight.
  • a pair of electrodes 110 and 120 are formed on the same surface.
  • the same surface may be either a virtual surface or a substrate surface, but when formed on the substrate surface, it may be a flat substrate or a flexible substrate that can be bent.
  • An appropriate method such as vapor deposition, sputtering, or plating is used to form the electrode. Photolithographic techniques may be used as necessary.
  • One electrode 1110 and the other electrode 120 are formed by the same process.
  • a hole transport material to be the p-layer organic semiconductor 15 is applied to a predetermined portion, for example, one electrode 110.
  • a printing method using an inkjet printer can be applied.
  • an electron transport material to be the n-layer organic semiconductor 16 is applied between the p layer and the p layer, for example, the other electrode 120.
  • a printing technique using an inkjet printer can be used for coating.
  • a pn junction is formed by the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16.
  • the n-layer organic semiconductor 16 may be applied, and then the p-layer organic semiconductor 15 may be applied.
  • the photoelectric conversion device 1 is manufactured by forming the protective layer 17 by painting or the like. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 1 is manufactured.
  • the electrodes for the photoelectric conversion device are alternately arranged planes in which one electrode functioning as a p-type electrode and the other electrode functioning as an n-type electrode are formed side by side. It has an electrode structure. Therefore, it is not necessary to provide a p-layer organic semiconductor on one electrode and an n-layer organic semiconductor on the other electrode to form a pn junction in layers and to provide a transparent electrode on the organic semiconductor. . Therefore, in the present invention, it is not necessary to use a transparent electrode material as the electrode material.
  • the photoelectric conversion device 1 can be manufactured on a flexible substrate such as a glass substrate or the like. Since an organic semiconductor can be provided on the electrode by coating, the manufacturing process is not complicated, and the organic semiconductor can be manufactured at low cost.
  • FIG. 2 is a cross-sectional view of a photoelectric conversion device 1A according to a first modification of the embodiment of the present invention.
  • the photoelectric conversion device 1 ⁇ / b> A includes an insulating base material 11, one electrode 13 and the other electrode 14 as photoelectric conversion device electrodes 12 formed side by side on the base material 11, A p-layer organic semiconductor 15 made of a hole transport material provided on one electrode 13, an n-layer organic semiconductor 16 made of an electron transport material provided on the other electrode 14, and a p-layer organic semiconductor 15 And a protective layer 17 provided so as to cover the n-layer organic semiconductor 16.
  • the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 form a pn junction.
  • the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 are formed side by side on the photoelectric conversion device electrode 12.
  • one electrode 13 and the other electrode 14 constituting the photoelectric conversion device electrode 12 are formed side by side on the surface of the base material 11, similarly to the organic semiconductor 15 and the organic semiconductor 16. Therefore, it is not necessary to provide an electrode on the light incident surface as in Patent Document 2, and it is not necessary to use a rare metal for the transparent electrode provided on the light irradiation side of Patent Document 2 as a material. Therefore, as will be described later, the photoelectric conversion device electrode 12 may use Cu, Al, or the like.
  • the base material 11 may be various types such as a glass substrate, a resin substrate, and a printed circuit board.
  • the mounting surface of the photoelectric conversion device may not be a flat surface but may be a curved surface.
  • FIG. 3 is a plan view of the electrode for the photoelectric conversion device 1A shown in FIG. 2, and FIG. 4 is an enlarged view of a portion A in FIG.
  • one electrode 13 and the other electrode 14 are configured as comb electrodes.
  • the comb-tooth electrode has a structure in which a plurality of electrode fingers 13a and 14a arranged in a comb-like shape in parallel at an appropriate interval are electrically connected at one end by connection electrodes 13b and 14b.
  • connection electrode 13b and the other connection electrode 14b are arranged opposite to each other, and the electrode fingers 13a and 14a are arranged within the space between each other, whereby the electrode finger 13a of one electrode and the other electrode The electrode fingers 14a are alternately arranged.
  • an interdigital electrode is formed by one electrode 13 and the other electrode 14.
  • the interdigital electrode is composed of comb electrodes interleaved with each other, and the electrode fingers 13a and electrode fingers 14a of the comb electrodes are alternately arranged.
  • One electrode 13 and the other electrode 14 are respectively connected to electrode electrodes 13a, 14a and one end of the connection electrodes 13b, 14b, and one end of the connection electrodes 13b, 14b, and a connection terminal for external wiring And lead-out electrodes 13c and 14c extending to 13d and 14d.
  • the electrode fingers 13 a and 14 a are formed to extend left and right, and the electrode fingers 13 a and the electrode fingers 14 a are alternately spaced at predetermined intervals in a direction substantially perpendicular to the extending direction. The same number is lined up.
  • the left end of each electrode finger 13a is connected to the connection electrode 14b, and the lead-out electrode 13c extends from the lower end of the connection electrode 14b to the connection terminal 13d with the external wiring along the aforementioned extending direction.
  • the right end of each electrode finger 14a is connected to the connection electrode 14b, and a connection terminal 14d for external wiring is formed at the lower end of the connection electrode 14b. In other words, depending on the position of the connection terminal with the external wiring, the lead electrode may not be necessary.
  • Organic semiconductors 15 and 16 are provided on such an electrode structure.
  • a p-layer organic semiconductor 15 is formed on at least the electrode finger 13 a of one electrode 13, and an n-layer organic semiconductor 16 is formed on at least the electrode finger 14 a of the other electrode 14. Therefore, the electrode finger 13a of one electrode 13 functions as a p-type electrode, and the electrode finger 14a of the other electrode 14 functions as an n-type electrode.
  • a hole transport material to be the p-layer organic semiconductor 15 is applied to a predetermined portion, for example, one electrode 13.
  • a printing method using an inkjet printer can be applied.
  • an electron transport material to be the n-layer organic semiconductor 16 is applied between the p layer and the p layer, for example, the other electrode 14.
  • a printing technique using an inkjet printer can be used for the application.
  • a pn junction is formed by the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16.
  • the n-layer organic semiconductor 16 may be applied, and then the p-layer organic semiconductor 15 may be applied.
  • the protective layer 17 is formed by painting or the like to produce the photoelectric conversion device 1A. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1A illustrated in FIG. 2 is manufactured.
  • this photoelectric conversion device 1A like the above-described photoelectric conversion device 1, an alternating array in which one electrode functioning as a p-type electrode and the other electrode functioning as an n-type electrode are formed side by side on a substrate. It has a planar electrode structure. Therefore, it is not necessary to provide a p-layer organic semiconductor on one electrode and an n-layer organic semiconductor on the other electrode to form a pn junction and provide an electrode on the organic semiconductor. Therefore, it is not necessary to use a transparent electrode material as the electrode material.
  • FIG. 5 is a cross-sectional view of a photoelectric conversion device 1B according to a second modification of the embodiment of the present invention
  • FIG. 6 is a perspective view of the photoelectric conversion device 1B.
  • the photoelectric conversion device 1B includes an insulating base material 11 ′, an electrode 12 ′ provided on the upper surface of the base material 11 ′, a photoelectric conversion layer 130 that covers the electrode 12 ′, and a protective layer that covers the upper surface of the photoelectric conversion layer 130. 17. In FIG. 6, the display of the photoelectric conversion layer 130 and the protective layer 17 is omitted.
  • the base material 11 ′ is formed in a sheet shape and has flexibility. For example, what was formed as a flexible substrate by PET etc. is used. In this embodiment, as shown in FIG. 6, the base material 11 ′ has a rectangular outline.
  • the short side is referred to as the first side 11A ′
  • the long side is referred to as the second side 11B ′.
  • the electrode 12 ′ will be described with reference to FIG.
  • a plurality of weft yarns 12B ′ disposed at a predetermined pitch in the extending direction of the first side 11A ′.
  • the warp yarns 12A 'and the weft yarns 12B' are woven so as to intersect each other. That is, the electrode 12 'is formed in a plain weave net shape.
  • the warp yarn 12A ′ As the warp yarn 12A ′ extending along the first side 11A ′, three kinds of wires are used. Specifically, the first metal wire 121 ′, the second metal wire 122 ′, and the first insulating wire 123 ′ are used. As shown in FIG. 6, the first metal wire 121 ′ and the second metal wire 122 ′ are alternately arranged, and the first metal wire 121 ′ and the second metal wire 122 ′ are arranged between the first metal wire 121 ′ and the second metal wire 122 ′. An insulating wire 123 'is provided.
  • first metal wire 121 ′ and the second metal wire 122 ′ for example, a copper wire, a stainless wire, a wire obtained by performing metal plating on the surface of a chemical fiber, or the like can be used.
  • One end 121E ′ of each first metal wire 121 ′ is connected to the first bus bar 121A ′ as shown in FIG.
  • Each second metal wire 122 ' has an end 122E' located on the other end 121F 'side of the first metal wire 121' connected to the second bus bar 122A '.
  • the first insulating wire 123 ′ is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, vinyl resin, or the like.
  • the second insulating wire is used as the weft 12B 'extending along the second side 11B'. Similar to the first insulating wire 123 ', the second insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • the first metal wire 121 ′, the second metal wire 122 ′, the first insulating wire 123 ′, and the second insulating wire are set to a thickness of about 20 ⁇ m to 30 ⁇ m.
  • FIG. 7 is a schematic enlarged view of a circle B region in FIG.
  • the photoelectric conversion layer 130 is provided on one electrode, that is, the p-layer organic semiconductor 15 made of a hole transport material provided on the first metal wire 121 ′ and the second metal wire 122 ′ as the other electrode.
  • an n-layer organic semiconductor 16 made of an electron transport material. Therefore, one first metal wire 121 ′ functions as a p-type electrode, and the other second metal wire 122 ′ functions as an n-type electrode.
  • the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16 form a pn junction.
  • the first metal wire 121 ′ and the second metal wire 122 ′ constituting the photoelectric conversion device electrode 12 ′ are formed on the base material 11 ′, and the first metal wire 121 ′ and the second metal wire 121 ′ are further formed.
  • a p-layer organic semiconductor 13A ′ and an n-layer organic semiconductor 13B ′ are formed on the same surface so as to cover the metal wire 122 ′. Therefore, the surface on which light is incident can be the protective layer 17 instead of the photoelectric conversion device electrode 12 side.
  • the protective layer 17 is provided so as to cover the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16.
  • the protective layer 17 is formed of, for example, a resin or the like as long as it is a material that transmits irradiation light such as sunlight.
  • a method for manufacturing the photoelectric conversion device 1B shown in FIG. First, the base material 11 ′ is prepared. Next, the first metal wire 121 ′, the second metal wire 122 ′, the first insulating wire 123 ′, and the second insulating wire are prepared and plain woven. An electrode 12 ′ formed by plain weaving is fixed on the substrate 11 with, for example, an adhesive. Thereafter, a hole transport material to be the p-layer organic semiconductor 15 is applied on a predetermined portion, for example, on the first metal wire 121 ′ as one electrode. For the application, for example, a printing method using an inkjet printer can be applied.
  • an electron transport material to be the n-layer organic semiconductor 16 is applied between the p layer and the p layer, for example, on the second metal wire 122 ′ as the other electrode.
  • a printing technique using an inkjet printer can be used for coating.
  • a pn junction is formed by the p-layer organic semiconductor 15 and the n-layer organic semiconductor 16.
  • the n-layer organic semiconductor 16 may be applied, and then the p-layer organic semiconductor 15 may be applied.
  • the protective layer 17 is formed by painting or the like to produce the photoelectric conversion device 1B. Note that the method is not limited to the above method as long as the photoelectric conversion device 1B illustrated in FIG. 5 is manufactured.
  • the first metal wire 121 ′ and the second metal wire 122 ′ constituting the photoelectric conversion device electrode 12 ′ are formed on the base material 11 ′, and the first metal wire 121 is further formed.
  • a p-layer organic semiconductor 15 and an n-layer organic semiconductor 16 are formed on the base material 11 'so as to cover' and the second metal wire 122 '. Therefore, the surface on which light is incident can be the protective layer 17 instead of the photoelectric conversion device electrode 12 ′ side. Therefore, it is not necessary to configure the electrode with a transparent electrode, and it is not necessary to use a rare metal for the transparent electrode as a material. Therefore, Cu, Al, etc. can be used for electrode 12 'for photoelectric conversion devices. Further, in the photoelectric conversion device 1B, since the electrode 12 'is formed of a flexible net, it can be attached to a curved surface after being formed in a flat shape.
  • the present invention can be implemented with appropriate modifications within the scope of the present invention.
  • the configuration in which one first insulating wire 123 ′ is provided between the first metal wire 121 ′ and the second metal wire 122 ′ is described, but a plurality of the first insulating wire 123 ′ may be provided.
  • the photoelectric conversion device 1B may be configured by omitting the base material 11 '.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un dispositif de conversion photoélectrique (1) pourvu des éléments suivants : une couche de conversion photoélectrique (130) qui effectue une conversion entre la lumière et l'énergie électrique ; et deux électrodes (110, 120) qui sont prévues sur une première surface de la couche de conversion photoélectrique. La première électrode (110) et la seconde électrode (120) sont agencées côte à côte. Un semi-conducteur organique (15) d'une couche p, qui se compose d'un matériau de transport de trous, est prévu sur l'électrode (110), et un semi-conducteur organique (16) d'une couche n, qui se compose d'un matériau de transport d'électrons, est prévu sur l'électrode (120). L'électrode (110) fonctionne comme une électrode de type p, et l'électrode (120) fonctionne comme une électrode de type n.
PCT/JP2011/071049 2011-09-14 2011-09-14 Dispositif de conversion photoélectrique Ceased WO2013038535A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/JP2011/071049 WO2013038535A1 (fr) 2011-09-14 2011-09-14 Dispositif de conversion photoélectrique
JP2013533648A JP5881050B2 (ja) 2011-09-14 2012-09-09 光電変換デバイス
PCT/JP2012/072999 WO2013039020A1 (fr) 2011-09-14 2012-09-09 Procédé permettant de fabriquer un dispositif de conversion photoélectrique, électrode destinée à un dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et dispositif électroluminescent
PCT/JP2012/072998 WO2013039019A1 (fr) 2011-09-14 2012-09-09 Électrode destinée à un dispositif de conversion photoélectrique, et dispositif de conversion photoélectrique
JP2013533649A JP5957787B2 (ja) 2011-09-14 2012-09-09 光電変換デバイスの製造方法及び光電変換デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/071049 WO2013038535A1 (fr) 2011-09-14 2011-09-14 Dispositif de conversion photoélectrique

Publications (1)

Publication Number Publication Date
WO2013038535A1 true WO2013038535A1 (fr) 2013-03-21

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PCT/JP2011/071049 Ceased WO2013038535A1 (fr) 2011-09-14 2011-09-14 Dispositif de conversion photoélectrique

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172778A (en) * 1981-09-02 1982-10-23 Sharp Corp Solar battery
JPH04109681A (ja) * 1990-08-29 1992-04-10 Oki Electric Ind Co Ltd 縦型ｐｎ接合太陽電池
JP2004103939A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp 直立型超格子、デバイス及び直立型超格子の製造方法。
JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172778A (en) * 1981-09-02 1982-10-23 Sharp Corp Solar battery
JPH04109681A (ja) * 1990-08-29 1992-04-10 Oki Electric Ind Co Ltd 縦型ｐｎ接合太陽電池
JP2004103939A (ja) * 2002-09-11 2004-04-02 Japan Science & Technology Corp 直立型超格子、デバイス及び直立型超格子の製造方法。
JP2005011841A (ja) * 2003-06-16 2005-01-13 Japan Science & Technology Agency 垂直接合型有機光起電力装置及びその製造方法

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