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WO2009036722A3 - Vorrichtung zur plasmabehandlung von werkstücken - Google Patents

Vorrichtung zur plasmabehandlung von werkstücken Download PDF

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Publication number
WO2009036722A3
WO2009036722A3 PCT/DE2008/001351 DE2008001351W WO2009036722A3 WO 2009036722 A3 WO2009036722 A3 WO 2009036722A3 DE 2008001351 W DE2008001351 W DE 2008001351W WO 2009036722 A3 WO2009036722 A3 WO 2009036722A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
workpieces
plasma treatment
plasma
gas lance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/001351
Other languages
English (en)
French (fr)
Other versions
WO2009036722A2 (de
Inventor
Soenke Siebels
Sebastian Kytzia
Hartwig Mueller
Felix Tietz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KHS GmbH
Original Assignee
KHS Corpoplast GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KHS Corpoplast GmbH filed Critical KHS Corpoplast GmbH
Priority to US12/679,291 priority Critical patent/US20110023781A1/en
Priority to JP2010525189A priority patent/JP2010539333A/ja
Priority to EP08801174A priority patent/EP2198447A2/de
Priority to CN2008801082158A priority patent/CN101855698B/zh
Publication of WO2009036722A2 publication Critical patent/WO2009036722A2/de
Publication of WO2009036722A3 publication Critical patent/WO2009036722A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Treatment Of Fiber Materials (AREA)

Abstract

Die Vorrichtung dient zur Plasmabehandlung von Werkstücken. Das Werkstück wird in eine zumindest teilweise evakuierbare Kammer (17) einer Behandlungsstation eingesetzt. Die Plasmakammer ist von einem Kammerboden (29), einem Kammerdeckel (31) sowie einer seitlichen Kammerwandung (18) begrenzt und weist eine positionierbare Gaslanze (36) auf. Die Gaslanze ist mindestens bereichsweise aus einem Dielektrikum ausgebildet.
PCT/DE2008/001351 2007-09-21 2008-08-14 Vorrichtung zur plasmabehandlung von werkstücken Ceased WO2009036722A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/679,291 US20110023781A1 (en) 2007-09-21 2008-08-14 Device for the plasma treatment of workpieces
JP2010525189A JP2010539333A (ja) 2007-09-21 2008-08-14 被加工物のプラズマ処理用の装置
EP08801174A EP2198447A2 (de) 2007-09-21 2008-08-14 Vorrichtung zur plasmabehandlung von werkstücken
CN2008801082158A CN101855698B (zh) 2007-09-21 2008-08-14 用于对工件进行等离子处理的装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007045216A DE102007045216A1 (de) 2007-09-21 2007-09-21 Vorrichtung zur Plasmabehandlung von Werkstücken
DE102007045216.2 2007-09-21

Publications (2)

Publication Number Publication Date
WO2009036722A2 WO2009036722A2 (de) 2009-03-26
WO2009036722A3 true WO2009036722A3 (de) 2009-05-28

Family

ID=40202178

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001351 Ceased WO2009036722A2 (de) 2007-09-21 2008-08-14 Vorrichtung zur plasmabehandlung von werkstücken

Country Status (6)

Country Link
US (1) US20110023781A1 (de)
EP (1) EP2198447A2 (de)
JP (1) JP2010539333A (de)
CN (1) CN101855698B (de)
DE (1) DE102007045216A1 (de)
WO (1) WO2009036722A2 (de)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0790635A2 (de) * 1996-02-16 1997-08-20 Novellus Systems, Inc. Vorrichtung zur chemischen Abscheidung aus der Dampfphase mit einer getrennten Injektion von Reinigungsgas
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
DE10052082A1 (de) * 1999-11-12 2001-06-28 Knn Systemtechnik Gmbh Verfahren zum Behandeln und Beschichten von Oberflächen aus nichtleitenden, dielektrischen Materialien mittels mokrowellenangeregter Plasmen und Vorrichtung zur Durchführung des Verfahrens
WO2003100118A2 (de) * 2002-05-24 2003-12-04 Sig Technology Ltd. Verfahren und vorrichtung zur behandlung von werkstücken
EP1508630A1 (de) * 2002-05-28 2005-02-23 Kirin Brewery Company, Ltd. Vorrichtung zur herstellung eines mit einem dlc-film beschichteten kunststoffbehälters

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476620A (en) * 1962-12-13 1969-11-04 Trw Semiconductors Inc Fabrication of diffused junction semiconductor devices
US4707231A (en) * 1984-09-26 1987-11-17 Pradom Limited Process for preparing composite materials and products obtained with said process
MX9303141A (es) * 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
BR9505649A (pt) 1994-02-16 1996-03-19 Coca Cola Co Processo e sistema para a formação de um revestimento de polimero sobre uma superfície de um recipiente e sistema e processo para a formação de uma superfície interna inerte/impermeável de um recipiente
WO1997044503A1 (en) * 1996-05-22 1997-11-27 Tetra Laval Holdings & Finance S.A. Method and apparatus for treating inside surfaces of containers
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
KR100500656B1 (ko) 1997-02-19 2005-07-11 기린 비루 가부시키가이샤 탄소막 코팅 플라스틱 용기의 제조 장치 및 제조 방법
JP2001518685A (ja) 1997-09-30 2001-10-16 テトラ ラヴァル ホールディングズ アンド ファイナンス エス．アー． プラズマ強化処理におけるプラスチック製ボトルの内面処理方法および装置
FR2791598B1 (fr) 1999-03-30 2001-06-22 Sidel Sa Machine a carrousel pour le traitement de corps creux comportant un circuit de distribution de pression perfectionne et distributeur pour une telle machine
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
FR2799994B1 (fr) 1999-10-25 2002-06-07 Sidel Sa Dispositif pour le traitement d'un recipient a l'aide d'un plasma a basse pression comportant un circuit de vide perfectionne
DE10224547B4 (de) * 2002-05-24 2020-06-25 Khs Corpoplast Gmbh Verfahren und Vorrichtung zur Plasmabehandlung von Werkstücken
WO2003100125A1 (de) * 2002-05-24 2003-12-04 Sig Technology Ltd. Verfahren und vorrichtung zur plasmabehandlung von werkstücken
EP1507889B1 (de) * 2002-05-24 2014-08-06 KHS Corpoplast GmbH Verfahren und vorrichtung zur plasmabehandlung von werkstücken
AU2003233770A1 (en) * 2002-05-24 2003-12-12 Sig Technology Ltd. Method and device for plasma treating workpieces
AU2003242357A1 (en) * 2002-06-05 2003-12-22 Kirin Brewery Company, Limited Method and device for cleaning raw material gas introduction tube used in cvd film forming apparatus
EP1588404A2 (de) * 2003-01-17 2005-10-26 General Electric Company Waferhandhabungsvorrichtung
JP4376659B2 (ja) * 2004-03-01 2009-12-02 パナソニック株式会社 プラズマ処理方法
DE102004020185B4 (de) 2004-04-22 2013-01-17 Schott Ag Verfahren und Vorrichtung für die Innenbeschichtung von Hohlkörpern sowie Verwendung der Vorrichtung
JP4171452B2 (ja) * 2004-10-18 2008-10-22 三菱重工食品包装機械株式会社 バリア膜形成用内部電極及び成膜装置
JP4519808B2 (ja) * 2006-06-07 2010-08-04 凸版印刷株式会社 薄膜成膜方法および薄膜成膜装置
DE102006032568A1 (de) * 2006-07-12 2008-01-17 Stein, Ralf Verfahren zur plasmagestützten chemischen Gasphasenabscheidung an der Innenwand eines Hohlkörpers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0790635A2 (de) * 1996-02-16 1997-08-20 Novellus Systems, Inc. Vorrichtung zur chemischen Abscheidung aus der Dampfphase mit einer getrennten Injektion von Reinigungsgas
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
DE10052082A1 (de) * 1999-11-12 2001-06-28 Knn Systemtechnik Gmbh Verfahren zum Behandeln und Beschichten von Oberflächen aus nichtleitenden, dielektrischen Materialien mittels mokrowellenangeregter Plasmen und Vorrichtung zur Durchführung des Verfahrens
WO2003100118A2 (de) * 2002-05-24 2003-12-04 Sig Technology Ltd. Verfahren und vorrichtung zur behandlung von werkstücken
EP1508630A1 (de) * 2002-05-28 2005-02-23 Kirin Brewery Company, Ltd. Vorrichtung zur herstellung eines mit einem dlc-film beschichteten kunststoffbehälters

Also Published As

Publication number Publication date
EP2198447A2 (de) 2010-06-23
CN101855698A (zh) 2010-10-06
US20110023781A1 (en) 2011-02-03
DE102007045216A1 (de) 2009-04-02
CN101855698B (zh) 2012-03-21
WO2009036722A2 (de) 2009-03-26
JP2010539333A (ja) 2010-12-16

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