[go: up one dir, main page]

WO2009031413A1 - 天板及びこれを用いたプラズマ処理装置 - Google Patents

天板及びこれを用いたプラズマ処理装置 Download PDF

Info

Publication number
WO2009031413A1
WO2009031413A1 PCT/JP2008/064915 JP2008064915W WO2009031413A1 WO 2009031413 A1 WO2009031413 A1 WO 2009031413A1 JP 2008064915 W JP2008064915 W JP 2008064915W WO 2009031413 A1 WO2009031413 A1 WO 2009031413A1
Authority
WO
WIPO (PCT)
Prior art keywords
top panel
processing apparatus
plasma processing
same
processing container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064915
Other languages
English (en)
French (fr)
Inventor
Kiyotaka Ishibashi
Tadahiro Ohmi
Tetsuya Goto
Masahiro Okesaku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Tokyo Electron Ltd
Original Assignee
Tohoku University NUC
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Tokyo Electron Ltd filed Critical Tohoku University NUC
Priority to US12/675,273 priority Critical patent/US20100288439A1/en
Priority to CN2008801061096A priority patent/CN101796615B/zh
Priority to KR1020107000848A priority patent/KR101156038B1/ko
Publication of WO2009031413A1 publication Critical patent/WO2009031413A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes
    • Y10T83/0481—Puncturing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

　開示される天板は、内部が真空引き可能なプラズマ処理装置の処理容器の天井における開口部に設けられる一体化された天板であって、天板の平面方向に沿って形成された複数のガス通路と、複数のガス通路に連通し、処理容器内に臨む天板の第１の面に開口するガス噴出孔とを含む。
PCT/JP2008/064915 2007-09-06 2008-08-21 天板及びこれを用いたプラズマ処理装置 Ceased WO2009031413A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/675,273 US20100288439A1 (en) 2007-09-06 2008-08-21 Top plate and plasma process apparatus employing the same
CN2008801061096A CN101796615B (zh) 2007-09-06 2008-08-21 顶板以及使用了该顶板的等离子体处理装置
KR1020107000848A KR101156038B1 (ko) 2007-09-06 2008-08-21 천판 및 이를 이용한 플라즈마 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-232099 2007-09-06
JP2007232099A JP5058727B2 (ja) 2007-09-06 2007-09-06 天板構造及びこれを用いたプラズマ処理装置

Publications (1)

Publication Number Publication Date
WO2009031413A1 true WO2009031413A1 (ja) 2009-03-12

Family

ID=40428733

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064915 Ceased WO2009031413A1 (ja) 2007-09-06 2008-08-21 天板及びこれを用いたプラズマ処理装置

Country Status (6)

Country Link
US (1) US20100288439A1 (ja)
JP (1) JP5058727B2 (ja)
KR (1) KR101156038B1 (ja)
CN (1) CN101796615B (ja)
TW (1) TWI391998B (ja)
WO (1) WO2009031413A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120305190A1 (en) * 2011-05-31 2012-12-06 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020071422A (ko) * 2001-03-05 2002-09-12 이해룡 고구마 줄기를 주재로한 생녹즙의 제조방법
US20080254220A1 (en) * 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
JP2008047869A (ja) * 2006-06-13 2008-02-28 Hokuriku Seikei Kogyo Kk シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP5010234B2 (ja) * 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US20080241377A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Vapor deposition system and method of operating
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
KR101937115B1 (ko) 2011-03-04 2019-01-09 노벨러스 시스템즈, 인코포레이티드 하이브리드 세라믹 샤워헤드
US20130189838A1 (en) * 2012-01-20 2013-07-25 Makoto Honda Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
KR20140059669A (ko) * 2012-11-08 2014-05-16 박형상 샤워헤드 및 이를 포함하는 박막 증착 장치
JP6210792B2 (ja) * 2013-08-13 2017-10-11 株式会社ディスコ プラズマエッチング装置
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
JP6501493B2 (ja) * 2014-11-05 2019-04-17 東京エレクトロン株式会社 プラズマ処理装置
DE102015004430B4 (de) * 2015-04-02 2017-01-05 Centrotherm Photovoltaics Ag Vorrichtung und Verfahren zur Plasmabehandlung von Wafern
KR102055370B1 (ko) * 2015-04-16 2019-12-16 주식회사 원익아이피에스 기판처리장치
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
KR102071501B1 (ko) * 2015-07-07 2020-01-30 주식회사 원익아이피에스 기판 처리 장치
KR20180112794A (ko) * 2016-01-22 2018-10-12 어플라이드 머티어리얼스, 인코포레이티드 전도성 층들이 매립된 세라믹 샤워헤드
JP6615069B2 (ja) * 2016-08-29 2019-12-04 東京エレクトロン株式会社 懸垂型インジェクタの支持構造及びこれを用いた基板処理装置
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
KR20190005029A (ko) * 2017-07-05 2019-01-15 삼성전자주식회사 플라즈마 처리 장치
JP2022545273A (ja) 2019-08-23 2022-10-26 ラム リサーチ コーポレーション 温度制御型のシャンデリア型シャワーヘッド
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
CN114256091B (zh) * 2020-09-24 2024-10-22 株式会社斯库林集团 基板处理装置及隔热构件
CN117427792A (zh) * 2022-07-14 2024-01-23 中微半导体设备(上海)股份有限公司 等离子体处理设备、气体喷淋头及其制造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115895A (ja) * 1995-08-17 1997-05-02 Tokyo Electron Ltd プラズマ処理装置
JP2000195800A (ja) * 1998-12-24 2000-07-14 Rohm Co Ltd 表面処理装置
JP2000228366A (ja) * 1999-02-08 2000-08-15 Furontekku:Kk 反応ガス使用処理装置
JP2003068725A (ja) * 2001-08-23 2003-03-07 Tokyo Electron Ltd 加熱処理装置
JP2003234336A (ja) * 2002-02-07 2003-08-22 Sharp Corp プラズマプロセス装置およびその装置内のダスト除去方法
JP2004039972A (ja) * 2002-07-05 2004-02-05 Tadahiro Omi プラズマ処理装置
JP2004100001A (ja) * 2002-09-11 2004-04-02 Air Water Inc 成膜装置
JP2005167227A (ja) * 2003-11-11 2005-06-23 Ibiden Co Ltd ガス噴出ヘッド、その製法、半導体製造装置及び耐食性材料
JP3117331U (ja) * 2004-07-29 2006-01-05 アプライド　マテリアルズ　インコーポレイテッド 半導体ウエハ処理システムにおけるシャワーヘッドのためのデュアルガスフェースプレート

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03117331U (ja) * 1990-03-12 1991-12-04
JPH05144753A (ja) * 1991-11-21 1993-06-11 Nissin Electric Co Ltd 薄膜気相成長装置
US6089182A (en) * 1995-08-17 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
US5716451A (en) * 1995-08-17 1998-02-10 Tokyo Electron Limited Plasma processing apparatus
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
EP1629522A4 (en) * 2003-05-30 2008-07-23 Aviza Tech Inc GAS DISTRIBUTION SYSTEM
JP4624856B2 (ja) * 2005-05-30 2011-02-02 東京エレクトロン株式会社 プラズマ処理装置
JP5010234B2 (ja) * 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115895A (ja) * 1995-08-17 1997-05-02 Tokyo Electron Ltd プラズマ処理装置
JP2000195800A (ja) * 1998-12-24 2000-07-14 Rohm Co Ltd 表面処理装置
JP2000228366A (ja) * 1999-02-08 2000-08-15 Furontekku:Kk 反応ガス使用処理装置
JP2003068725A (ja) * 2001-08-23 2003-03-07 Tokyo Electron Ltd 加熱処理装置
JP2003234336A (ja) * 2002-02-07 2003-08-22 Sharp Corp プラズマプロセス装置およびその装置内のダスト除去方法
JP2004039972A (ja) * 2002-07-05 2004-02-05 Tadahiro Omi プラズマ処理装置
JP2004100001A (ja) * 2002-09-11 2004-04-02 Air Water Inc 成膜装置
JP2005167227A (ja) * 2003-11-11 2005-06-23 Ibiden Co Ltd ガス噴出ヘッド、その製法、半導体製造装置及び耐食性材料
JP3117331U (ja) * 2004-07-29 2006-01-05 アプライド　マテリアルズ　インコーポレイテッド 半導体ウエハ処理システムにおけるシャワーヘッドのためのデュアルガスフェースプレート

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120305190A1 (en) * 2011-05-31 2012-12-06 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US9245717B2 (en) * 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US10366865B2 (en) 2011-05-31 2019-07-30 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor

Also Published As

Publication number Publication date
TWI391998B (zh) 2013-04-01
US20100288439A1 (en) 2010-11-18
TW200931501A (en) 2009-07-16
KR20100028106A (ko) 2010-03-11
JP5058727B2 (ja) 2012-10-24
JP2009064988A (ja) 2009-03-26
CN101796615B (zh) 2012-03-21
CN101796615A (zh) 2010-08-04
KR101156038B1 (ko) 2012-06-21

Similar Documents

Publication Publication Date Title
WO2009031413A1 (ja) 天板及びこれを用いたプラズマ処理装置
USD668107S1 (en) Oven panel set
WO2009028376A1 (ja) 天板及びプラズマ処理装置
USD704356S1 (en) Floor tile
USD566257S1 (en) Exhaust system panel
USD608302S1 (en) Operator panel
USD649662S1 (en) Insulating building panel
EP2312613A3 (en) Showerhead assembly for plasma processing chamber
USD662616S1 (en) Ceiling panel
WO2011022378A3 (en) Carton with handle
WO2007095635A3 (en) Hot-fill container capable of internal pressurization
MY146369A (en) Workpiece handler and alignment assembly
WO2007146936A3 (en) Reusable resilient cushion for wafer container
WO2011119827A3 (en) Paneled deck assembly for transporter vehicle
WO2009041499A1 (ja) プラズマ処理装置及びそのガス排気方法
WO2009111344A3 (en) Method and apparatus for removing polymer from a substrate
USD689047S1 (en) Pilot terminal unit
EP2600426A3 (en) Solar cell apparatus
WO2009041609A1 (ja) タッチ入力装置及びこれを具えた携帯電子機器
USD570183S1 (en) Cabinet knob
WO2008150824A3 (en) Packs and methods of erecting packs
USD642605S1 (en) Lid assembly for a substrate processing chamber
WO2009066390A1 (ja) スパッタ装置およびスパッタ方法
USD662380S1 (en) Bottle opener
USD652875S1 (en) Two-hand lifting calibration apparatus

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880106109.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08829881

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20107000848

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12675273

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 08829881

Country of ref document: EP

Kind code of ref document: A1