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WO2009044693A1 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
WO2009044693A1
WO2009044693A1 PCT/JP2008/067611 JP2008067611W WO2009044693A1 WO 2009044693 A1 WO2009044693 A1 WO 2009044693A1 JP 2008067611 W JP2008067611 W JP 2008067611W WO 2009044693 A1 WO2009044693 A1 WO 2009044693A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing
plasma processing
substrate
metallic
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067611
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English (en)
French (fr)
Inventor
Jun Yamashita
Yoshiro Kabe
Junichi Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US12/680,645 priority Critical patent/US20100291319A1/en
Priority to CN2008801092037A priority patent/CN101809724B/zh
Publication of WO2009044693A1 publication Critical patent/WO2009044693A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

　被処理基板をプラズマ処理するプラズマ処理装置であって、プラズマ処理を行う処理空間１を形成する金属製処理容器２と、処理空間１内に設けられた、被処理基板Ｗが載置される基板載置台３と、金属製処理容器２の側壁を処理空間１から遮蔽し、下端が基板載置台３の被処理基板載置面よりも下方に延びる石英製部材４ａと、石英製部材４ａの底面と金属製処理容器２の底壁２ｂとの間に設けられた、金属製処理容器２の底壁２ｂを、処理空間１から遮蔽する環状の石英製部材６と、基板載置台３の外周近傍から処理空間１に処理ガスを導入する処理ガス導入部と、を備える。
PCT/JP2008/067611 2007-09-29 2008-09-29 プラズマ処理装置及びプラズマ処理方法 Ceased WO2009044693A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/680,645 US20100291319A1 (en) 2007-09-29 2008-09-29 Plasma processing apparatus and plasma processing method
CN2008801092037A CN101809724B (zh) 2007-09-29 2008-09-29 等离子体处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-256964 2007-09-29
JP2007256964A JP2009088298A (ja) 2007-09-29 2007-09-29 プラズマ処理装置及びプラズマ処理方法

Publications (1)

Publication Number Publication Date
WO2009044693A1 true WO2009044693A1 (ja) 2009-04-09

Family

ID=40526122

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067611 Ceased WO2009044693A1 (ja) 2007-09-29 2008-09-29 プラズマ処理装置及びプラズマ処理方法

Country Status (5)

Country Link
US (1) US20100291319A1 (ja)
JP (1) JP2009088298A (ja)
KR (1) KR20100061702A (ja)
CN (1) CN101809724B (ja)
WO (1) WO2009044693A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084602A (ja) * 2011-10-05 2013-05-09 Applied Materials Inc 対称プラズマ処理チャンバ
JP2015095543A (ja) * 2013-11-12 2015-05-18 東京エレクトロン株式会社 プラズマ処理装置
CN110323120A (zh) * 2014-12-30 2019-10-11 应用材料公司 高传导处理配件

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JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5553588B2 (ja) * 2009-12-10 2014-07-16 東京エレクトロン株式会社 成膜装置
CN102618845B (zh) * 2012-04-01 2014-06-11 中微半导体设备(上海)有限公司 具有遮挡板装置的反应器
KR102086795B1 (ko) * 2012-06-11 2020-04-14 세메스 주식회사 기판 처리 장치 및 방법
KR102129766B1 (ko) * 2012-06-11 2020-07-03 세메스 주식회사 플라즈마 경계 제한 유닛, 그리고 기판 처리 장치 및 방법
CN103074595A (zh) * 2012-09-07 2013-05-01 光达光电设备科技（嘉兴）有限公司 用于气相沉积工艺的反应腔室
US9395243B2 (en) * 2013-01-21 2016-07-19 Sciaps, Inc. Handheld LIBS analyzer end plate purging structure
US9360367B2 (en) 2013-01-21 2016-06-07 Sciaps, Inc. Handheld LIBS spectrometer
CN104658845B (zh) * 2013-11-22 2017-07-28 中微半导体设备(上海)有限公司 等离子体处理装置及其隔离装置
JP5837962B1 (ja) * 2014-07-08 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびガス整流部
CN105463407B (zh) * 2014-09-05 2018-12-07 沈阳拓荆科技有限公司 原子层沉积设备
JP2016091654A (ja) * 2014-10-30 2016-05-23 東京エレクトロン株式会社 プラズマ処理装置
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
JP6656809B2 (ja) * 2015-02-20 2020-03-04 宏興 王 マイクロ波プラズマｃｖｄ装置
GB201504202D0 (en) * 2015-03-12 2015-04-29 Spts Technologies Ltd PE-CVD apparatus and method
JP7008509B2 (ja) * 2015-05-27 2022-02-10 アプライド マテリアルズ インコーポレイテッド 高成長率のｅｐｉチャンバのための遮熱リング
KR102046109B1 (ko) * 2015-10-02 2019-12-02 주식회사 원익아이피에스 기판 처리 장치
JP2019009185A (ja) * 2017-06-21 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
JP6902409B2 (ja) * 2017-06-23 2021-07-14 東京エレクトロン株式会社 プラズマ処理装置
JP7194941B2 (ja) * 2019-04-18 2022-12-23 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
US20210066051A1 (en) * 2019-08-28 2021-03-04 Applied Materials, Inc. High conductance lower shield for process chamber
US12100577B2 (en) 2019-08-28 2024-09-24 Applied Materials, Inc. High conductance inner shield for process chamber
USD931241S1 (en) 2019-08-28 2021-09-21 Applied Materials, Inc. Lower shield for a substrate processing chamber
USD913979S1 (en) 2019-08-28 2021-03-23 Applied Materials, Inc. Inner shield for a substrate processing chamber
US12080522B2 (en) 2020-04-22 2024-09-03 Applied Materials, Inc. Preclean chamber upper shield with showerhead
USD973609S1 (en) * 2020-04-22 2022-12-27 Applied Materials, Inc. Upper shield with showerhead for a process chamber
CN115483085A (zh) * 2022-10-17 2022-12-16 盛吉盛半导体科技(北京)有限公司 一种用于集成电路设备改善抽气均匀性的装置

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JP2003133298A (ja) * 2001-10-19 2003-05-09 Tokyo Electron Ltd マイクロ波プラズマ基板処理装置
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JP2003133298A (ja) * 2001-10-19 2003-05-09 Tokyo Electron Ltd マイクロ波プラズマ基板処理装置
JP2007214211A (ja) * 2006-02-07 2007-08-23 Tokyo Electron Ltd プラズマ処理装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084602A (ja) * 2011-10-05 2013-05-09 Applied Materials Inc 対称プラズマ処理チャンバ
JP2013211269A (ja) * 2011-10-05 2013-10-10 Applied Materials Inc 対称プラズマ処理チャンバ
US9741546B2 (en) 2011-10-05 2017-08-22 Applied Materials, Inc. Symmetric plasma process chamber
US10453656B2 (en) 2011-10-05 2019-10-22 Applied Materials, Inc. Symmetric plasma process chamber
US10535502B2 (en) 2011-10-05 2020-01-14 Applied Materials, Inc. Symmetric plasma process chamber
US10546728B2 (en) 2011-10-05 2020-01-28 Applied Materials, Inc. Symmetric plasma process chamber
US10580620B2 (en) 2011-10-05 2020-03-03 Applied Materials, Inc. Symmetric plasma process chamber
US10615006B2 (en) 2011-10-05 2020-04-07 Applied Materials, Inc. Symmetric plasma process chamber
US11315760B2 (en) 2011-10-05 2022-04-26 Applied Materials, Inc. Symmetric plasma process chamber
JP2015095543A (ja) * 2013-11-12 2015-05-18 東京エレクトロン株式会社 プラズマ処理装置
CN110323120A (zh) * 2014-12-30 2019-10-11 应用材料公司 高传导处理配件
CN110323120B (zh) * 2014-12-30 2021-12-21 应用材料公司 高传导处理配件

Also Published As

Publication number Publication date
JP2009088298A (ja) 2009-04-23
CN101809724A (zh) 2010-08-18
KR20100061702A (ko) 2010-06-08
US20100291319A1 (en) 2010-11-18
CN101809724B (zh) 2012-09-05

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