[go: up one dir, main page]

WO2008111470A1 - 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 - Google Patents

感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 Download PDF

Info

Publication number
WO2008111470A1
WO2008111470A1 PCT/JP2008/054008 JP2008054008W WO2008111470A1 WO 2008111470 A1 WO2008111470 A1 WO 2008111470A1 JP 2008054008 W JP2008054008 W JP 2008054008W WO 2008111470 A1 WO2008111470 A1 WO 2008111470A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin composition
photosensitive resin
hardened film
electronic part
producing patterned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054008
Other languages
English (en)
French (fr)
Inventor
Tomonori Minegishi
Rika Nogita
Kenichi Iwashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HD MicroSystems Ltd
Original Assignee
Hitachi Chemical DuPont Microsystems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical DuPont Microsystems Ltd filed Critical Hitachi Chemical DuPont Microsystems Ltd
Priority to KR1020097017117A priority Critical patent/KR101438857B1/ko
Priority to EP08721428.4A priority patent/EP2133743B1/en
Priority to US12/531,055 priority patent/US8298747B2/en
Priority to JP2009503999A priority patent/JP5434588B2/ja
Publication of WO2008111470A1 publication Critical patent/WO2008111470A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • C08G69/28—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/06—Polyamides derived from polyamines and polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)

Abstract

　硬化後の膜の物性が、高温で硬化したものと遜色ない性能が得られる感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品を提供する。感光性樹脂組成物は、（ａ）一般式（Ｉ）： 　　【化１】 （式中、Ｕ又はＶは２価の有機基を示し、Ｕ又はＶの少なくとも一方が炭素数１～３０の脂肪族鎖状構造を含む基である。）で示される繰り返し単位を有するポリベンゾオキサゾール前駆体と、（ｂ）感光剤と、（ｃ）溶剤と、及び（ｄ）加熱により架橋または重合し得る架橋剤とを含有する。
PCT/JP2008/054008 2007-03-12 2008-03-06 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 Ceased WO2008111470A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097017117A KR101438857B1 (ko) 2007-03-12 2008-03-06 감광성 수지 조성물, 그 수지 조성물을 이용한 패턴 경화막의 제조방법 및 전자부품
EP08721428.4A EP2133743B1 (en) 2007-03-12 2008-03-06 Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
US12/531,055 US8298747B2 (en) 2007-03-12 2008-03-06 Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
JP2009503999A JP5434588B2 (ja) 2007-03-12 2008-03-06 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-062342 2007-03-12
JP2007062342 2007-03-12
JP2007283396 2007-10-31
JP2007-283396 2007-10-31

Publications (1)

Publication Number Publication Date
WO2008111470A1 true WO2008111470A1 (ja) 2008-09-18

Family

ID=39759412

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054008 Ceased WO2008111470A1 (ja) 2007-03-12 2008-03-06 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品

Country Status (6)

Country Link
US (1) US8298747B2 (ja)
EP (1) EP2133743B1 (ja)
JP (1) JP5434588B2 (ja)
KR (1) KR101438857B1 (ja)
TW (1) TWI430021B (ja)
WO (1) WO2008111470A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009037201A (ja) * 2007-03-14 2009-02-19 Fujifilm Corp 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置
JP2010096927A (ja) * 2008-10-15 2010-04-30 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
JP2011053458A (ja) * 2009-09-02 2011-03-17 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
JP2011132533A (ja) * 2011-02-24 2011-07-07 Asahi Kasei E-Materials Corp アルカリ可溶性重合体、それを含む感光性樹脂組成物、及びその用途
JP2012203359A (ja) * 2011-03-28 2012-10-22 Hitachi Chemical Dupont Microsystems Ltd ネガ型感光性樹脂組成物、パターン形成方法及び電子部品
JP2013003310A (ja) * 2011-06-15 2013-01-07 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
JP2013167742A (ja) * 2012-02-15 2013-08-29 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
KR20160126974A (ko) 2014-02-19 2016-11-02 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 수지 조성물, 그에 따라 형성되는 경화막 및 패턴 경화막, 및 그들의 제조 방법
WO2017057089A1 (ja) * 2015-09-28 2017-04-06 東レ株式会社 硬化膜およびその製造方法
WO2017122623A1 (ja) * 2016-01-15 2017-07-20 東レ株式会社 硬化膜およびその製造方法
WO2017134701A1 (ja) * 2016-02-05 2017-08-10 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物
JP2017212248A (ja) * 2016-05-23 2017-11-30 サンケン電気株式会社 半導体装置
JPWO2016181859A1 (ja) * 2015-05-08 2018-02-22 Jsr株式会社 はんだ電極の製造方法およびその用途

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101910220B1 (ko) * 2011-06-15 2018-10-19 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 감광성 수지 조성물, 그 수지 조성물을 사용한 패턴 경화막의 제조 방법 및 전자 부품
CN105453227B (zh) 2013-08-21 2018-10-19 应用材料公司 半导体薄膜制造中的变频微波（vfm）工艺及应用
KR20150049547A (ko) * 2013-10-30 2015-05-08 제일모직주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자
KR101728820B1 (ko) * 2013-12-12 2017-04-20 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자
KR101705755B1 (ko) 2013-12-19 2017-02-10 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자
US9519221B2 (en) * 2014-01-13 2016-12-13 Applied Materials, Inc. Method for microwave processing of photosensitive polyimides
JP6267982B2 (ja) * 2014-02-05 2018-01-24 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、電子デバイスの製造方法、新規化合物、及び、新規化合物の製造方法
KR101747229B1 (ko) * 2014-07-15 2017-06-14 삼성에스디아이 주식회사 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
KR101711918B1 (ko) * 2014-07-24 2017-03-03 삼성에스디아이 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막 및 표시 소자
CN107430334B (zh) * 2015-01-23 2021-07-30 艾曲迪微系统股份有限公司 正型感光性树脂组合物、图案固化膜的制造方法、图案固化膜和电子部件
US10450415B2 (en) * 2015-07-06 2019-10-22 Toyota Boshoku Kabushiki Kaisha Polyamide compound, and method for producing same
SG11201806171XA (en) * 2016-02-05 2018-08-30 Hitachi Chemical Dupont Microsystems Ltd Positive-type photosensitive resin composition
CN108779251B (zh) * 2016-04-25 2021-05-18 东丽株式会社 树脂组合物
US11448964B2 (en) * 2016-05-23 2022-09-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
JP7154184B2 (ja) * 2019-04-15 2022-10-17 信越化学工業株式会社 ポジ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
TWI841777B (zh) * 2019-08-27 2024-05-11 日商富士軟片股份有限公司 硬化膜的製造方法、積層體的製造方法及電子元件的製造方法
KR20210030764A (ko) * 2019-09-10 2021-03-18 삼성전자주식회사 복합 구조체, 광학 필터, 이미지 센서, 카메라 모듈 및 전자 장치
TWI776586B (zh) * 2021-07-09 2022-09-01 律勝科技股份有限公司 聚苯并噁唑前驅物及其應用

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911551A (ja) 1972-05-31 1974-02-01
US4395482A (en) 1979-08-01 1983-07-26 Siemens Aktiengesellschaft Method for the preparation of heat-resistant relief structures using positive resists
JPS59108031A (ja) 1982-12-13 1984-06-22 Ube Ind Ltd 感光性ポリイミド
JPS59219330A (ja) 1983-05-18 1984-12-10 オーシージー　マイクロエレクトロニク　マテリアルズ　インク． ポリイミド、その製造方法および用途
JPS6460630A (en) 1987-07-21 1989-03-07 Hoechst Celanese Corp Hydroxypolyimide and high temperature positive type photoresist
JP2587148B2 (ja) 1990-07-11 1997-03-05 インターナショナル・ビジネス・マシーンズ・コーポレイション マイクロ波処理方法、ポリイミド製造方法及びマイクロ波装置
US5738915A (en) 1996-09-19 1998-04-14 Lambda Technologies, Inc. Curing polymer layers on semiconductor substrates using variable frequency microwave energy
JP3031434B2 (ja) 1991-08-07 2000-04-10 旭化成工業株式会社 ポリイミドのパターン形成方法
JP2002249646A (ja) * 2001-02-27 2002-09-06 Nippon Zeon Co Ltd 感放射線性樹脂組成物
JP2006178059A (ja) * 2004-12-21 2006-07-06 Hitachi Chemical Dupont Microsystems Ltd ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL177718C (nl) 1973-02-22 1985-11-01 Siemens Ag Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren.
USRE30186E (en) 1974-08-02 1980-01-08 Siemens Aktiengesellschaft Method for the preparation of relief structures
DE2437348B2 (de) 1974-08-02 1976-10-07 Ausscheidung in: 24 62 105 Verfahren zur herstellung von reliefstrukturen
US4093461A (en) 1975-07-18 1978-06-06 Gaf Corporation Positive working thermally stable photoresist composition, article and method of using
JPS5952822B2 (ja) 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
JPS606368B2 (ja) 1979-08-01 1985-02-18 東レ株式会社 感光性ポリイミド前駆体
JPS59132122A (ja) 1983-01-17 1984-07-30 Mitsubishi Electric Corp 気相結晶成長方法
US4657832A (en) 1983-05-18 1987-04-14 Ciba-Geigy Corporation Photosensitive polymers as coating materials
JPS59231533A (ja) 1983-05-18 1984-12-26 チバ−ガイギ−・アクチエンゲゼルシヤフト 塗膜を被覆した材料およびその使用方法
JPS59220730A (ja) 1983-05-30 1984-12-12 Ube Ind Ltd 溶媒可溶性の感光性ポリイミド
JPS59232122A (ja) 1983-06-14 1984-12-26 Ube Ind Ltd 有機溶媒可溶性の感光性ポリイミド
JPS606729A (ja) 1983-06-24 1985-01-14 Ube Ind Ltd 有機溶媒に可溶性の感光性ポリイミド
JPS6072925A (ja) 1983-09-30 1985-04-25 Ube Ind Ltd 有機溶媒可溶性の感光性ポリイミド
JPS6157620A (ja) 1984-08-30 1986-03-24 Ube Ind Ltd 有機溶媒可溶性の感光性ポリイミド
US5037720A (en) 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
US5106720A (en) 1987-07-21 1992-04-21 Hoechst Celanese Corporation Base developable negative acting photoresists
JPS6446862A (en) 1987-08-18 1989-02-21 Fujitsu Ltd Bus controller
US5019488A (en) 1988-09-29 1991-05-28 Hoechst Celanese Corporation Method of producing an image reversal negative photoresist having a photo-labile blocked imide
JPH03763A (ja) 1989-01-09 1991-01-07 Nitto Denko Corp ポジ型感光性ポリイミド組成物
JPH0331434A (ja) 1989-06-28 1991-02-12 Toyota Motor Corp 金属基複合材料を含むクラッド材の製造方法
JPH0358048A (ja) 1989-07-27 1991-03-13 Nitto Denko Corp ポジ型感光性ポリイミド組成物
JPH03259148A (ja) 1990-03-09 1991-11-19 Toshiba Corp 感光剤、感光性耐熱材料及び樹脂封止型半導体装置
EP0450189B1 (de) 1990-03-29 1996-10-30 Siemens Aktiengesellschaft Hochwärmebeständige Negativresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
JP2828740B2 (ja) 1990-06-14 1998-11-25 住友ベークライト株式会社 ポジ型感光性樹脂組成物
JP2877894B2 (ja) 1990-05-29 1999-04-05 住友ベークライト株式会社 ポジ型感光性樹脂組成物
JP2890213B2 (ja) 1991-02-25 1999-05-10 チッソ株式会社 感光性重合体組成物及びパターンの形成方法
EP0512339B1 (de) 1991-05-07 1997-10-15 Siemens Aktiengesellschaft Hochwärmebeständige Positivresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
JP3254772B2 (ja) 1992-11-20 2002-02-12 東亞合成株式会社 塩化ビニル系重合体の製造方法
JP3259148B2 (ja) 1993-05-13 2002-02-25 大成ロテック株式会社 スリップフォーム工法におけるコンクリート構造物中抜き方法
JP2841161B2 (ja) 1994-01-27 1998-12-24 株式会社巴川製紙所 パターン形成用感光性樹脂組成物およびパターン形成方法
EP0761718B1 (de) 1995-08-31 2001-02-28 Infineon Technologies AG Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
JP3031434U (ja) 1996-05-21 1996-11-29 ヤマト株式会社 養生用シート
JPH10186664A (ja) 1996-12-20 1998-07-14 Asahi Chem Ind Co Ltd ポジ型感光性耐熱材料
JPH10195294A (ja) 1997-01-09 1998-07-28 Shin Etsu Chem Co Ltd 感光性樹脂組成物
JPH10282668A (ja) 1997-04-10 1998-10-23 Mitsubishi Chem Corp 感放射線性樹脂材料及び感放射線性塗布組成物
JP3871767B2 (ja) 1997-05-07 2007-01-24 旭化成エレクトロニクス株式会社 感光性組成物
KR19980087522A (ko) 1997-05-30 1998-12-05 마티네츠 길러모 신규한 중합체를 함유하는 방사선 감응성 조성물
EP0905169B8 (de) * 1997-09-24 2008-07-16 Infineon Technologies AG Polybenzoxazol- und Polybenzothiazol-Vorstufen
JP3966590B2 (ja) 1997-11-20 2007-08-29 旭化成エレクトロニクス株式会社 感光性組成物
JP4058788B2 (ja) 1998-01-12 2008-03-12 東レ株式会社 感光性耐熱性樹脂前駆体組成物
JP4034403B2 (ja) 1998-01-16 2008-01-16 株式会社ピーアイ技術研究所 ポジ型感光性ポリイミド組成物及び絶縁膜
JP3798547B2 (ja) 1998-03-05 2006-07-19 富士写真フイルム株式会社 ネガ型画像記録材料
US6143467A (en) 1998-10-01 2000-11-07 Arch Specialty Chemicals, Inc. Photosensitive polybenzoxazole precursor compositions
JP3426531B2 (ja) 1998-10-30 2003-07-14 日立化成デュポンマイクロシステムズ株式会社 感光性重合体組成物、レリーフパターンの製造法及び電子部品
JP3974718B2 (ja) 1998-11-09 2007-09-12 Ａｚエレクトロニックマテリアルズ株式会社 感放射線性樹脂組成物
JP2000250209A (ja) 1999-03-01 2000-09-14 Toshiba Chem Corp 感光性樹脂組成物およびその製造方法
KR100316735B1 (ko) 1999-06-29 2001-12-12 김충섭 카르보네이트 측쇄를 포함하는 폴리아미드 중합체와 감광성내열절연체 조성물
JP2001033964A (ja) 1999-07-15 2001-02-09 Hitachi Chem Co Ltd ネガ型感光性樹脂組成物、パターンの製造法及び電子部品
US6338931B1 (en) 1999-08-16 2002-01-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP3755382B2 (ja) 1999-10-29 2006-03-15 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
JP4288796B2 (ja) 1999-10-29 2009-07-01 日立化成デュポンマイクロシステムズ株式会社 ネガ型感光性樹脂組成物、パターンの製造法及び電子部品
JP4428780B2 (ja) 1999-12-24 2010-03-10 旭化成イーマテリアルズ株式会社 ポジ感光性組成物
JP4087037B2 (ja) 2000-03-06 2008-05-14 住友ベークライト株式会社 ポジ型感光性樹脂組成物
JP3320397B2 (ja) 2000-03-09 2002-09-03 クラリアント ジャパン 株式会社 逆テーパー状レジストパターンの形成方法
JP4449159B2 (ja) 2000-04-28 2010-04-14 日立化成デュポンマイクロシステムズ株式会社 感光性重合体組成物及びパターンの製造方法並びに電子部品
US6576394B1 (en) 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
JP3492316B2 (ja) * 2000-09-22 2004-02-03 住友ベークライト株式会社 絶縁膜用材料、絶縁膜用コーティングワニス及びこれらを用いた絶縁膜並びに半導体装置
JP4029556B2 (ja) 2000-11-01 2008-01-09 Ｊｓｒ株式会社 感光性絶縁樹脂組成物およびその硬化物
JP2002169286A (ja) 2000-11-30 2002-06-14 Hitachi Chemical Dupont Microsystems Ltd 感光性重合体組成物、パターンの製造法及び電子部品
JP4082041B2 (ja) 2001-02-26 2008-04-30 東レ株式会社 ポジ型感光性樹脂前駆体組成物及びそれを用いた電子部品ならびに表示装置
TW574620B (en) 2001-02-26 2004-02-01 Toray Industries Precursor composition of positive photosensitive resin and display device using it
DE10145471A1 (de) * 2001-09-14 2003-04-17 Infineon Technologies Ag Fotosensitive Formulierung für Pufferschichten und Verwendungen dazu
JP2003121998A (ja) 2001-10-11 2003-04-23 Hitachi Chemical Dupont Microsystems Ltd 感光性重合体組成物及びパターン製造法及び電子部品
JP3960055B2 (ja) 2002-01-23 2007-08-15 Ｊｓｒ株式会社 感光性絶縁樹脂組成物およびその硬化物
US6887643B2 (en) 2002-08-05 2005-05-03 Toray Industries, Inc. Photosensitive resin precursor composition
JP4178011B2 (ja) 2002-09-03 2008-11-12 群栄化学工業株式会社 ポジ型感光性樹脂組成物
JP4207581B2 (ja) 2002-11-06 2009-01-14 日立化成デュポンマイクロシステムズ株式会社 耐熱感光性樹脂組成物、レリーフパターンの製造方法及び電子部品
JP2004219813A (ja) 2003-01-16 2004-08-05 Mitsubishi Electric Corp 感光性樹脂組成物
WO2004081664A2 (en) 2003-03-11 2004-09-23 Arch Specialty Chemicals, Inc. Novel photosensitive resin compositions
US20060199920A1 (en) 2003-04-15 2006-09-07 Koji Okada Photosensitive resin composition capable of being developed with aqueous developer and photosensitive dry film resist, and use thereof
JP2004325616A (ja) 2003-04-23 2004-11-18 Kanegafuchi Chem Ind Co Ltd アルカリ水溶液で現像可能な感光性樹脂組成物及び感光性ドライフィルムレジスト、並びにその利用
JP4430670B2 (ja) * 2003-06-05 2010-03-10 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規なポジ型感光性樹脂組成物
KR101067828B1 (ko) 2003-06-06 2011-09-27 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 신규한 감광성 수지 조성물들
JP4775261B2 (ja) * 2004-05-07 2011-09-21 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
JP4618075B2 (ja) 2004-09-29 2011-01-26 日立化成デュポンマイクロシステムズ株式会社 ネガ型感光性樹脂組成物及びパターン形成方法
JP4530284B2 (ja) 2004-10-07 2010-08-25 信越化学工業株式会社 ポリイミド系光硬化性樹脂組成物並びにパターン形成方法及び基板保護用皮膜
EP1662319A3 (en) 2004-11-24 2009-05-27 Toray Industries, Inc. Photosensitive resin composition
JP4639956B2 (ja) 2005-05-18 2011-02-23 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターンの製造方法及び電子部品
US7803510B2 (en) * 2005-08-17 2010-09-28 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive polybenzoxazole precursor compositions
US8871422B2 (en) 2005-09-22 2014-10-28 Hitachi Chemical Dupont Microsystems Ltd. Negative-type photosensitive resin composition, pattern forming method and electronic parts
JP2007192936A (ja) * 2006-01-17 2007-08-02 Asahi Kasei Electronics Co Ltd ポジ型感光性樹脂組成物
JP2007212602A (ja) 2006-02-08 2007-08-23 Toray Ind Inc ポジ型感光性樹脂前駆体組成物
JP2007246440A (ja) 2006-03-16 2007-09-27 Toray Ind Inc ジアミン化合物およびそれを用いたアルカリ可溶性樹脂、感光性樹脂組成物
JP4742995B2 (ja) 2006-06-02 2011-08-10 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターンの製造方法及び電子部品
JP5028059B2 (ja) 2006-09-28 2012-09-19 富士フイルム株式会社 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911551A (ja) 1972-05-31 1974-02-01
US4395482A (en) 1979-08-01 1983-07-26 Siemens Aktiengesellschaft Method for the preparation of heat-resistant relief structures using positive resists
JPS59108031A (ja) 1982-12-13 1984-06-22 Ube Ind Ltd 感光性ポリイミド
JPS59219330A (ja) 1983-05-18 1984-12-10 オーシージー　マイクロエレクトロニク　マテリアルズ　インク． ポリイミド、その製造方法および用途
JPS6460630A (en) 1987-07-21 1989-03-07 Hoechst Celanese Corp Hydroxypolyimide and high temperature positive type photoresist
JP2587148B2 (ja) 1990-07-11 1997-03-05 インターナショナル・ビジネス・マシーンズ・コーポレイション マイクロ波処理方法、ポリイミド製造方法及びマイクロ波装置
JP3031434B2 (ja) 1991-08-07 2000-04-10 旭化成工業株式会社 ポリイミドのパターン形成方法
US5738915A (en) 1996-09-19 1998-04-14 Lambda Technologies, Inc. Curing polymer layers on semiconductor substrates using variable frequency microwave energy
JP2002249646A (ja) * 2001-02-27 2002-09-06 Nippon Zeon Co Ltd 感放射線性樹脂組成物
JP2006178059A (ja) * 2004-12-21 2006-07-06 Hitachi Chemical Dupont Microsystems Ltd ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Nippon Polyimide Kenkyukai", 2002, JAPAN POLYIMIDE STUDY GROUP, article "Saishin Polyimide - Kiso to Ouyou - (Latest polyimide -Basics and Applications-)"
J. PHOTOPOLYM. SCI. TECHNOL., vol. 17, pages 207 - 213
See also references of EP2133743A4

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009037201A (ja) * 2007-03-14 2009-02-19 Fujifilm Corp 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置
JP2010096927A (ja) * 2008-10-15 2010-04-30 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
JP2011053458A (ja) * 2009-09-02 2011-03-17 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
JP2011132533A (ja) * 2011-02-24 2011-07-07 Asahi Kasei E-Materials Corp アルカリ可溶性重合体、それを含む感光性樹脂組成物、及びその用途
JP2012203359A (ja) * 2011-03-28 2012-10-22 Hitachi Chemical Dupont Microsystems Ltd ネガ型感光性樹脂組成物、パターン形成方法及び電子部品
JP2013003310A (ja) * 2011-06-15 2013-01-07 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
JP2013167742A (ja) * 2012-02-15 2013-08-29 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
KR20160126974A (ko) 2014-02-19 2016-11-02 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 수지 조성물, 그에 따라 형성되는 경화막 및 패턴 경화막, 및 그들의 제조 방법
JPWO2016181859A1 (ja) * 2015-05-08 2018-02-22 Jsr株式会社 はんだ電極の製造方法およびその用途
WO2017057089A1 (ja) * 2015-09-28 2017-04-06 東レ株式会社 硬化膜およびその製造方法
US10545406B2 (en) 2015-09-28 2020-01-28 Toray Industries, Inc. Cured film formed by curing photosensitive resin composition and method for manufacturing same
JPWO2017057089A1 (ja) * 2015-09-28 2018-07-12 東レ株式会社 硬化膜およびその製造方法
JPWO2017122623A1 (ja) * 2016-01-15 2018-11-01 東レ株式会社 硬化膜およびその製造方法
KR20180102576A (ko) * 2016-01-15 2018-09-17 도레이 카부시키가이샤 경화막 및 그 제조방법
WO2017122623A1 (ja) * 2016-01-15 2017-07-20 東レ株式会社 硬化膜およびその製造方法
US10908500B2 (en) 2016-01-15 2021-02-02 Toray Industries, Inc. Cured film and method for producing same
KR102553742B1 (ko) 2016-01-15 2023-07-07 도레이 카부시키가이샤 경화막 및 그 제조방법
WO2017134701A1 (ja) * 2016-02-05 2017-08-10 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物
JPWO2017134701A1 (ja) * 2016-02-05 2018-11-01 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物
US11592744B2 (en) 2016-02-05 2023-02-28 Hd Microsystems, Ltd. Positive-type photosensitive resin composition
JP2017212248A (ja) * 2016-05-23 2017-11-30 サンケン電気株式会社 半導体装置

Also Published As

Publication number Publication date
US8298747B2 (en) 2012-10-30
US20100092879A1 (en) 2010-04-15
JP5434588B2 (ja) 2014-03-05
TW200903148A (en) 2009-01-16
KR20090129403A (ko) 2009-12-16
EP2133743A1 (en) 2009-12-16
EP2133743B1 (en) 2018-01-24
KR101438857B1 (ko) 2014-09-05
TWI430021B (zh) 2014-03-11
EP2133743A4 (en) 2012-08-08
JPWO2008111470A1 (ja) 2010-06-24

Similar Documents

Publication Publication Date Title
WO2008111470A1 (ja) 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
WO2009072465A1 (ja) リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法
WO2008103776A3 (en) Thermally cured underlayer for lithographic application
US20120153285A1 (en) Solution processable passivation layers for organic electronic devices
WO2012070833A3 (ko) 광경화형 수지 조성물 및 이를 이용한 자기복제성 복제몰드의 제작방법
WO2008078620A1 (ja) 新規なポリイミド前駆体組成物、その利用及びそれらの製造方法
WO2004081663A3 (en) Novel photosensitive resin compositions
ATE523562T1 (de) Härtbare zusammensetzung
TW200745756A (en) Positive type photosensitive resin composition and cured coating prepared therefrom
TW200722910A (en) Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
WO2009034998A1 (ja) 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物
WO2009078078A1 (ja) チオピラン誘導体、重合体、及びレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法
TW200510937A (en) Antireflective film material, and antireflective film and pattern formation method using the same
TW200613915A (en) Positively radiation-sensitive resin composition
WO2009108574A3 (en) Processable inorganic and organic polymer formulations, methods of production and uses thereof
TW200725186A (en) Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same
WO2008143302A1 (ja) レジスト下層膜形成用組成物
WO2007092118A3 (en) Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
WO2006083284A3 (en) A material composition for nano- and micro-lithography
WO2009019574A8 (en) Photoresist composition for deep uv and process thereof
AR066988A1 (es) Metodo para recubrir un sustrato con una composicion de recubrimiento curable por radiacion y por curado quimico
TW200500384A (en) Novel thiol compound, copolymer and method for producing the copolymer
WO2008123507A1 (ja) ポジ型感光性樹脂組成物及びその硬化膜並びに表示素子
TW200702910A (en) Underlayer coating forming composition for lithography containing polysilane compound
TW200519173A (en) Film for hydraulic transfer printing and hydraulic transfer printing compound

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08721428

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009503999

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020097017117

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2008721428

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12531055

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE