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WO2009072465A1 - リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法 - Google Patents

リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法 Download PDF

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Publication number
WO2009072465A1
WO2009072465A1 PCT/JP2008/071798 JP2008071798W WO2009072465A1 WO 2009072465 A1 WO2009072465 A1 WO 2009072465A1 JP 2008071798 W JP2008071798 W JP 2008071798W WO 2009072465 A1 WO2009072465 A1 WO 2009072465A1
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WO
WIPO (PCT)
Prior art keywords
base film
forming
composition
lithography
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071798
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English (en)
French (fr)
Inventor
Dai Oguro
Go Higashihara
Seiji Kita
Mitsuharu Kitamura
Masashi Ogiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to CN200880119430.8A priority Critical patent/CN101889247B/zh
Priority to EP08857409.0A priority patent/EP2219076B1/en
Priority to JP2009544661A priority patent/JP5370158B2/ja
Priority to KR1020107012373A priority patent/KR101397354B1/ko
Priority to US12/746,421 priority patent/US8592134B2/en
Publication of WO2009072465A1 publication Critical patent/WO2009072465A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G10/00—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
    • C08G10/02—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/38—Block or graft polymers prepared by polycondensation of aldehydes or ketones onto macromolecular compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Architecture (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)

Abstract

　リソグラフィー用下層膜に、優れた光学特性及びエッチング耐性を付与するリソグラフィー用下層膜形成組成物、及び該組成物から形成された屈折率（ｎ）が高く、消衰係数（ｋ）が低く、透明でかつエッチング耐性が高く、さらに昇華性成分が極めて少ない下層膜、及び該下層膜を用いたパターン形成方法を提供する。そのような下層膜形成組成物は、少なくともナフタレン及び／又はアルキルナフタレンとホルムアルデヒドとを反応させて得られる、特定の単位を含むナフタレンホルムアルデヒド系重合体、及び有機溶媒を含むものである。
PCT/JP2008/071798 2007-12-07 2008-12-01 リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法 Ceased WO2009072465A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN200880119430.8A CN101889247B (zh) 2007-12-07 2008-12-01 用于形成光刻用下层膜的组合物和多层抗蚀图案的形成方法
EP08857409.0A EP2219076B1 (en) 2007-12-07 2008-12-01 Composition for forming base film for lithography and method for forming multilayer resist pattern
JP2009544661A JP5370158B2 (ja) 2007-12-07 2008-12-01 リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法
KR1020107012373A KR101397354B1 (ko) 2007-12-07 2008-12-01 리소그라피용 하층막 형성 조성물 및 다층 레지스트 패턴 형성 방법
US12/746,421 US8592134B2 (en) 2007-12-07 2008-12-01 Composition for forming base film for lithography and method for forming multilayer resist pattern

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-317102 2007-12-07
JP2007317102 2007-12-07
JP2007318874 2007-12-10
JP2007-318874 2007-12-10
JP2007-334057 2007-12-26
JP2007334057 2007-12-26

Publications (1)

Publication Number Publication Date
WO2009072465A1 true WO2009072465A1 (ja) 2009-06-11

Family

ID=40717645

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071798 Ceased WO2009072465A1 (ja) 2007-12-07 2008-12-01 リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法

Country Status (7)

Country Link
US (1) US8592134B2 (ja)
EP (1) EP2219076B1 (ja)
JP (1) JP5370158B2 (ja)
KR (1) KR101397354B1 (ja)
CN (1) CN101889247B (ja)
TW (1) TWI437370B (ja)
WO (1) WO2009072465A1 (ja)

Cited By (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009229666A (ja) * 2008-03-21 2009-10-08 Jsr Corp 下層膜形成用組成物及びそれを用いたパターン形成方法
JP2010122297A (ja) * 2008-11-17 2010-06-03 Mitsubishi Gas Chemical Co Inc リソグラフィー用下層膜形成組成物
JP2011037992A (ja) * 2009-08-11 2011-02-24 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂
JP2011037993A (ja) * 2009-08-11 2011-02-24 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂の製造方法
WO2011024967A1 (ja) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
JP2011046837A (ja) * 2009-08-27 2011-03-10 Mitsubishi Gas Chemical Co Inc 変性ジメチルナフタレンホルムアルデヒド樹脂
WO2011034062A1 (ja) 2009-09-15 2011-03-24 三菱瓦斯化学株式会社 芳香族炭化水素樹脂及びリソグラフィー用下層膜形成組成物
JP2011081200A (ja) * 2009-10-07 2011-04-21 Mitsubishi Gas Chemical Co Inc 溶解抑止剤、ネガ型感放射線性組成物およびレジストパターン形成方法
WO2011099235A1 (ja) * 2010-02-12 2011-08-18 三菱瓦斯化学株式会社 下層膜材料及び多層レジストパターン形成方法
WO2012036121A1 (ja) * 2010-09-14 2012-03-22 東京応化工業株式会社 下地剤及びブロックコポリマーを含む層のパターン形成方法
WO2012090408A1 (ja) 2010-12-28 2012-07-05 三菱瓦斯化学株式会社 芳香族炭化水素樹脂、リソグラフィー用下層膜形成組成物及び多層レジストパターンの形成方法
WO2012165507A1 (ja) 2011-06-03 2012-12-06 三菱瓦斯化学株式会社 フェノール系樹脂およびリソグラフィー用下層膜形成材料
WO2013024779A1 (ja) 2011-08-12 2013-02-21 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
WO2013047106A1 (ja) 2011-09-30 2013-04-04 三菱瓦斯化学株式会社 フルオレン構造を有する樹脂及びリソグラフィー用下層膜形成材料
WO2014038680A1 (ja) 2012-09-10 2014-03-13 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
WO2014123107A1 (ja) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
US20140227887A1 (en) * 2011-09-06 2014-08-14 Dongjin Semichem Co., Ltd. Phenol-based self-crosslinking polymer and resist underlayer film composition including same
WO2014123102A1 (ja) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法
WO2014203865A1 (ja) * 2013-06-18 2014-12-24 三菱瓦斯化学株式会社 シアン酸エステル化合物、該化合物を含む硬化性樹脂組成物及びその硬化物
WO2014203866A1 (ja) * 2013-06-18 2014-12-24 三菱瓦斯化学株式会社 樹脂組成物、プリプレグ、樹脂シート及び金属箔張り積層板
WO2016021511A1 (ja) * 2014-08-08 2016-02-11 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
JP2016106083A (ja) * 2010-07-30 2016-06-16 三菱瓦斯化学株式会社 化合物、感放射線性組成物及びレジストパターン形成方法
WO2016140081A1 (ja) * 2015-03-03 2016-09-09 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、レジストパターン形成方法、及び回路パターン形成方法
WO2016147989A1 (ja) * 2015-03-13 2016-09-22 三菱瓦斯化学株式会社 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜、パターン形成方法、及び、化合物又は樹脂の精製方法
WO2016163457A1 (ja) * 2015-04-07 2016-10-13 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
WO2016163456A1 (ja) * 2015-04-07 2016-10-13 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
KR20160134682A (ko) 2014-03-13 2016-11-23 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 리소그래피용 하층막 형성재료, 리소그래피용 하층막, 패턴 형성방법, 및 화합물 또는 수지의 정제방법
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JP6269904B1 (ja) * 2016-04-06 2018-01-31 Dic株式会社 ノボラック型樹脂の製造方法
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WO2020004316A1 (ja) 2018-06-26 2020-01-02 三菱瓦斯化学株式会社 リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
WO2020039966A1 (ja) 2018-08-20 2020-02-27 三菱瓦斯化学株式会社 リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
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JPWO2020241576A1 (ja) * 2019-05-27 2020-12-03
KR20210093842A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
KR20210093904A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
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KR20210093842A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
KR20210093904A (ko) 2018-11-21 2021-07-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
KR20210138611A (ko) 2019-03-19 2021-11-19 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성 재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막, 패턴 형성방법, 및 정제방법
KR20220013361A (ko) * 2019-05-27 2022-02-04 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법 및 정제방법
JPWO2020241576A1 (ja) * 2019-05-27 2020-12-03
WO2020241576A1 (ja) * 2019-05-27 2020-12-03 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法および精製方法
JP7589681B2 (ja) 2019-05-27 2024-11-26 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法および精製方法
KR102772578B1 (ko) 2019-05-27 2025-02-26 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법 및 정제방법
KR20230152680A (ko) 2021-03-02 2023-11-03 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 조성물, 리소그래피용 하층막, 및 패턴 형성방법
EP4418305A1 (en) 2023-02-15 2024-08-21 Shin-Etsu Chemical Co., Ltd. Patterning process
CN116813852A (zh) * 2023-03-16 2023-09-29 嘉庚创新实验室 用于光刻介质组合物的化合物、聚合物以及光刻介质组合物
CN116813852B (zh) * 2023-03-16 2024-04-19 嘉庚创新实验室 用于光刻介质组合物的化合物、聚合物以及光刻介质组合物
EP4600734A1 (en) 2024-01-31 2025-08-13 Shin-Etsu Chemical Co., Ltd. Pattern forming method and laminate
EP4660703A2 (en) 2024-05-29 2025-12-10 Shin-Etsu Chemical Co., Ltd. Metal-containing film patterning process

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KR101397354B1 (ko) 2014-05-19
TW200925785A (en) 2009-06-16
EP2219076A1 (en) 2010-08-18
CN101889247B (zh) 2013-04-03
TWI437370B (zh) 2014-05-11
EP2219076A4 (en) 2012-03-14
US20100316950A1 (en) 2010-12-16
US8592134B2 (en) 2013-11-26
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