SG11201703665WA - Ald method and apparatus - Google Patents

Ald method and apparatus

Info

Publication number: SG11201703665WA
Authority: SG; Singapore
Prior art keywords: ald method; ald
Prior art date: 2014-12-22

Application number

SG11201703665WA

Other languages

English (en)

Inventor

Timo Malinen

Juhana Kostamo

Wei-Min Li

Tero Pilvi

Original Assignee

Picosun Oy

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-12-22

Filing date

2015-11-25

Publication date

2017-06-29

2015-11-25 Application filed by Picosun Oy filed Critical Picosun Oy

2017-06-29 Publication of SG11201703665WA publication Critical patent/SG11201703665WA/en

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/484—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using X-ray radiation
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

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Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Physics & Mathematics (AREA)
Electromagnetism (AREA)
Plasma & Fusion (AREA)
Optics & Photonics (AREA)
Chemical Vapour Deposition (AREA)
Formation Of Insulating Films (AREA)

SG11201703665WA 2014-12-22 2015-11-25 Ald method and apparatus SG11201703665WA (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FI20140361A FI126970B (en)	2014-12-22	2014-12-22	Atomic layer cultivation in which the first and second species of source materials are present simultaneously
PCT/FI2015/050819 WO2016102748A1 (fr)	2014-12-22	2015-11-25	Procédé et appareil ald

Publications (1)

Publication Number	Publication Date
SG11201703665WA true SG11201703665WA (en)	2017-06-29

Family

ID=56149317

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SG11201703665WA SG11201703665WA (en)	2014-12-22	2015-11-25	Ald method and apparatus

Country Status (11)

Country	Link
US (1)	US10619241B2 (fr)
EP (1)	EP3237650B1 (fr)
JP (1)	JP6814136B2 (fr)
KR (3)	KR20170099904A (fr)
CN (2)	CN115961267A (fr)
ES (1)	ES2870613T3 (fr)
FI (1)	FI126970B (fr)
RU (1)	RU2702669C2 (fr)
SG (1)	SG11201703665WA (fr)
TW (1)	TWI684667B (fr)
WO (1)	WO2016102748A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN110234793B (zh) *	2017-02-08	2020-10-02	皮考逊公司	具有可移动结构的沉积或清洁装置和操作方法
CN107400878A (zh) *	2017-07-26	2017-11-28	北京芯微诺达科技有限公司	一种原子层沉积设备的进气系统及其方法
FI129557B (en)	2019-11-28	2022-04-29	Picosun Oy	Substrate processing apparatus and process
FI129369B (en) *	2020-06-26	2021-12-31	Picosun Oy	Substrate processing equipment and process
RU2748658C1 (ru) *	2020-07-16	2021-05-28	Пикосан Ой	Устройство для осаждения или очистки с подвижной конструкцией и способ его эксплуатации
RU204415U1 (ru) *	2020-12-17	2021-05-24	Дмитрий Сергеевич Кузьмичев	Устройство для атомно-слоевого осаждения
KR20220164161A (ko) *	2021-06-04	2022-12-13	주성엔지니어링(주)	박막 증착 방법

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FI118158B (sv) *	1999-10-15	2007-07-31	Asm Int	Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
KR100467366B1 (ko)	2000-06-30	2005-01-24	주식회사 하이닉스반도체	원자층 증착법을 이용한 지르코늄산화막 형성방법
US6911391B2 (en) *	2002-01-26	2005-06-28	Applied Materials, Inc.	Integration of titanium and titanium nitride layers
KR100474072B1 (ko)	2002-09-17	2005-03-10	주식회사 하이닉스반도체	귀금속 박막의 형성 방법
US6905737B2 (en) *	2002-10-11	2005-06-14	Applied Materials, Inc.	Method of delivering activated species for rapid cyclical deposition
DE102004004719A1 (de)	2004-01-29	2005-08-18	Basf Ag	Verfahren zur Herstellung von enantiomerenreinen Aminoalkoholen
US7326293B2 (en) *	2004-03-26	2008-02-05	Zyvex Labs, Llc	Patterned atomic layer epitaxy
US20050221021A1 (en)	2004-03-31	2005-10-06	Tokyo Electron Limited	Method and system for performing atomic layer deposition
JP2005310927A (ja)	2004-04-20	2005-11-04	Toshiba Corp	紫外線照射による高品質シリコン窒化膜の成膜方法
US7740704B2 (en) *	2004-06-25	2010-06-22	Tokyo Electron Limited	High rate atomic layer deposition apparatus and method of using
US7351656B2 (en) *	2005-01-21	2008-04-01	Kabushiki Kaihsa Toshiba	Semiconductor device having oxidized metal film and manufacture method of the same
JP4473824B2 (ja)	2005-01-21	2010-06-02	株式会社東芝	半導体装置の製造方法
US7727912B2 (en) *	2006-03-20	2010-06-01	Tokyo Electron Limited	Method of light enhanced atomic layer deposition
US7709056B2 (en) *	2007-05-16	2010-05-04	Uchicago Argonne, Llc	Synthesis of transparent conducting oxide coatings
US8129288B2 (en) *	2008-05-02	2012-03-06	Intermolecular, Inc.	Combinatorial plasma enhanced deposition techniques
US8741062B2 (en)	2008-04-22	2014-06-03	Picosun Oy	Apparatus and methods for deposition reactors
US10378106B2 (en) *	2008-11-14	2019-08-13	Asm Ip Holding B.V.	Method of forming insulation film by modified PEALD
US9379011B2 (en) *	2008-12-19	2016-06-28	Asm International N.V.	Methods for depositing nickel films and for making nickel silicide and nickel germanide
US20120237695A1 (en) *	2009-12-23	2012-09-20	2-Pye Solar, LLC	Method and apparatus for depositing a thin film
US9611544B2 (en)	2010-04-15	2017-04-04	Novellus Systems, Inc.	Plasma activated conformal dielectric film deposition
US8728956B2 (en) *	2010-04-15	2014-05-20	Novellus Systems, Inc.	Plasma activated conformal film deposition
US8637411B2 (en) *	2010-04-15	2014-01-28	Novellus Systems, Inc.	Plasma activated conformal dielectric film deposition
TWI563582B (en)	2010-06-03	2016-12-21	Novellus Systems Inc	Method of improving film non-uniformity and throughput
BE1019439A3 (fr) *	2010-07-30	2012-07-03	Diarotech	Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
TW201224190A (en) *	2010-10-06	2012-06-16	Applied Materials Inc	Atomic layer deposition of photoresist materials and hard mask precursors
JP5927679B2 (ja) *	2010-10-16	2016-06-01	ウルトラテック，インコーポレイテッド	Ａｌｄコーティングシステム
US8465811B2 (en) *	2011-01-28	2013-06-18	Asm Japan K.K.	Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
CN103459660B (zh) *	2011-04-07	2016-01-06	皮考逊公司	具有等离子体源的沉积反应器
US8647993B2 (en) *	2011-04-11	2014-02-11	Novellus Systems, Inc.	Methods for UV-assisted conformal film deposition
US8871617B2 (en)	2011-04-22	2014-10-28	Asm Ip Holding B.V.	Deposition and reduction of mixed metal oxide thin films
KR102084901B1 (ko)	2011-09-23	2020-03-05	노벨러스 시스템즈, 인코포레이티드	플라즈마 활성화된 컨포멀 유전체 막 증착
US8912101B2 (en) *	2012-03-15	2014-12-16	Asm Ip Holding B.V.	Method for forming Si-containing film using two precursors by ALD
EP2861780A4 (fr) *	2012-06-15	2016-01-20	Picosun Oy	Application de revêtement sur une feuille continue de substrat par dépôt de couche atomique
DE102012221080A1 (de) *	2012-11-19	2014-03-06	Osram Opto Semiconductors Gmbh	Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements

2014
- 2014-12-22 FI FI20140361A patent/FI126970B/en active IP Right Grant
2015
- 2015-11-25 SG SG11201703665WA patent/SG11201703665WA/en unknown
- 2015-11-25 RU RU2017124639A patent/RU2702669C2/ru active
- 2015-11-25 CN CN202211632706.0A patent/CN115961267A/zh active Pending
- 2015-11-25 ES ES15872018T patent/ES2870613T3/es active Active
- 2015-11-25 EP EP15872018.5A patent/EP3237650B1/fr active Active
- 2015-11-25 KR KR1020177017114A patent/KR20170099904A/ko not_active Ceased
- 2015-11-25 JP JP2017529021A patent/JP6814136B2/ja active Active
- 2015-11-25 KR KR1020237040286A patent/KR102659545B1/ko active Active
- 2015-11-25 CN CN201580069868.XA patent/CN107109647A/zh active Pending
- 2015-11-25 WO PCT/FI2015/050819 patent/WO2016102748A1/fr not_active Ceased
- 2015-11-25 KR KR1020247012706A patent/KR20240056632A/ko not_active Ceased
- 2015-11-25 US US15/536,943 patent/US10619241B2/en active Active
- 2015-12-07 TW TW104140939A patent/TWI684667B/zh active

Also Published As

Publication number	Publication date
EP3237650A4 (fr)	2018-01-17
KR102659545B1 (ko)	2024-04-23
FI20140361A7 (fi)	2016-06-23
US20170342560A1 (en)	2017-11-30
RU2017124639A3 (fr)	2019-05-08
JP2018500462A (ja)	2018-01-11
KR20230163589A (ko)	2023-11-30
WO2016102748A1 (fr)	2016-06-30
EP3237650A1 (fr)	2017-11-01
CN107109647A (zh)	2017-08-29
TW201634736A (zh)	2016-10-01
TWI684667B (zh)	2020-02-11
US10619241B2 (en)	2020-04-14
KR20240056632A (ko)	2024-04-30
EP3237650B1 (fr)	2021-04-21
KR20170099904A (ko)	2017-09-01
ES2870613T3 (es)	2021-10-27
FI126970B (en)	2017-08-31
CN115961267A (zh)	2023-04-14
RU2702669C2 (ru)	2019-10-09
RU2017124639A (ru)	2019-01-24
JP6814136B2 (ja)	2021-01-13

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