[go: up one dir, main page]

FI20140361A7 - Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti - Google Patents

Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti

Info

Publication number
FI20140361A7
FI20140361A7 FI20140361A FI20140361A FI20140361A7 FI 20140361 A7 FI20140361 A7 FI 20140361A7 FI 20140361 A FI20140361 A FI 20140361A FI 20140361 A FI20140361 A FI 20140361A FI 20140361 A7 FI20140361 A7 FI 20140361A7
Authority
FI
Finland
Prior art keywords
atomic layer
layer growth
present simultaneously
source species
species
Prior art date
Application number
FI20140361A
Other languages
English (en)
Swedish (sv)
Other versions
FI126970B (fi
Inventor
Timo Malinen
Juhana Kostamo
Wei-Min Li
Tero Pilvi
Original Assignee
Picosun Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FI20140361A priority Critical patent/FI126970B/fi
Application filed by Picosun Oy filed Critical Picosun Oy
Priority to CN202211632706.0A priority patent/CN115961267A/zh
Priority to CN201580069868.XA priority patent/CN107109647A/zh
Priority to KR1020237040286A priority patent/KR102659545B1/ko
Priority to JP2017529021A priority patent/JP6814136B2/ja
Priority to RU2017124639A priority patent/RU2702669C2/ru
Priority to US15/536,943 priority patent/US10619241B2/en
Priority to SG11201703665WA priority patent/SG11201703665WA/en
Priority to EP15872018.5A priority patent/EP3237650B1/en
Priority to KR1020247012706A priority patent/KR20240056632A/ko
Priority to ES15872018T priority patent/ES2870613T3/es
Priority to PCT/FI2015/050819 priority patent/WO2016102748A1/en
Priority to KR1020177017114A priority patent/KR20170099904A/ko
Priority to TW104140939A priority patent/TWI684667B/zh
Publication of FI20140361A7 publication Critical patent/FI20140361A7/fi
Application granted granted Critical
Publication of FI126970B publication Critical patent/FI126970B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/484—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using X-ray radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
FI20140361A 2014-12-22 2014-12-22 Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti FI126970B (fi)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FI20140361A FI126970B (fi) 2014-12-22 2014-12-22 Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti
EP15872018.5A EP3237650B1 (en) 2014-12-22 2015-11-25 Ald method and apparatus
KR1020237040286A KR102659545B1 (ko) 2014-12-22 2015-11-25 Ald 방법 및 장치
JP2017529021A JP6814136B2 (ja) 2014-12-22 2015-11-25 Ａｌｄ法およびａｌｄ装置
RU2017124639A RU2702669C2 (ru) 2014-12-22 2015-11-25 Способ и устройство для атомно-слоевого осаждения
US15/536,943 US10619241B2 (en) 2014-12-22 2015-11-25 ALD method and apparatus
CN202211632706.0A CN115961267A (zh) 2014-12-22 2015-11-25 Ald方法和设备
CN201580069868.XA CN107109647A (zh) 2014-12-22 2015-11-25 Ald方法和设备
KR1020247012706A KR20240056632A (ko) 2014-12-22 2015-11-25 Ald 방법 및 장치
ES15872018T ES2870613T3 (es) 2014-12-22 2015-11-25 Método y aparato de ALD
PCT/FI2015/050819 WO2016102748A1 (en) 2014-12-22 2015-11-25 Ald method and apparatus
KR1020177017114A KR20170099904A (ko) 2014-12-22 2015-11-25 Ald 방법 및 장치
SG11201703665WA SG11201703665WA (en) 2014-12-22 2015-11-25 Ald method and apparatus
TW104140939A TWI684667B (zh) 2014-12-22 2015-12-07 沉積技術（一）

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20140361A FI126970B (fi) 2014-12-22 2014-12-22 Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti

Publications (2)

Publication Number Publication Date
FI20140361A7 true FI20140361A7 (fi) 2016-06-23
FI126970B FI126970B (fi) 2017-08-31

Family

ID=56149317

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20140361A FI126970B (fi) 2014-12-22 2014-12-22 Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti

Country Status (11)

Country Link
US (1) US10619241B2 (fi)
EP (1) EP3237650B1 (fi)
JP (1) JP6814136B2 (fi)
KR (3) KR102659545B1 (fi)
CN (2) CN107109647A (fi)
ES (1) ES2870613T3 (fi)
FI (1) FI126970B (fi)
RU (1) RU2702669C2 (fi)
SG (1) SG11201703665WA (fi)
TW (1) TWI684667B (fi)
WO (1) WO2016102748A1 (fi)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2928391T3 (es) 2017-02-08 2022-11-17 Picosun Oy Aparato de deposición o de limpieza con estructura móvil y método de funcionamiento
CN107400878A (zh) * 2017-07-26 2017-11-28 北京芯微诺达科技有限公司 一种原子层沉积设备的进气系统及其方法
FI129557B (fi) 2019-11-28 2022-04-29 Picosun Oy Substraatin prosessointilaitteisto ja -menetelmä
FI129369B (fi) * 2020-06-26 2021-12-31 Picosun Oy Substraatin prosessointilaitteisto ja menetelmä
RU2748658C1 (ru) * 2020-07-16 2021-05-28 Пикосан Ой Устройство для осаждения или очистки с подвижной конструкцией и способ его эксплуатации
RU204415U1 (ru) * 2020-12-17 2021-05-24 Дмитрий Сергеевич Кузьмичев Устройство для атомно-слоевого осаждения
KR20220164161A (ko) * 2021-06-04 2022-12-13 주성엔지니어링(주) 박막 증착 방법

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118158B (sv) * 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
KR100467366B1 (ko) * 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
KR100474072B1 (ko) 2002-09-17 2005-03-10 주식회사 하이닉스반도체 귀금속 박막의 형성 방법
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
DE102004004719A1 (de) 2004-01-29 2005-08-18 Basf Ag Verfahren zur Herstellung von enantiomerenreinen Aminoalkoholen
US7326293B2 (en) * 2004-03-26 2008-02-05 Zyvex Labs, Llc Patterned atomic layer epitaxy
US20050221021A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for performing atomic layer deposition
JP2005310927A (ja) * 2004-04-20 2005-11-04 Toshiba Corp 紫外線照射による高品質シリコン窒化膜の成膜方法
US7740704B2 (en) * 2004-06-25 2010-06-22 Tokyo Electron Limited High rate atomic layer deposition apparatus and method of using
US7351656B2 (en) 2005-01-21 2008-04-01 Kabushiki Kaihsa Toshiba Semiconductor device having oxidized metal film and manufacture method of the same
JP4473824B2 (ja) * 2005-01-21 2010-06-02 株式会社東芝 半導体装置の製造方法
US7727912B2 (en) * 2006-03-20 2010-06-01 Tokyo Electron Limited Method of light enhanced atomic layer deposition
US7709056B2 (en) * 2007-05-16 2010-05-04 Uchicago Argonne, Llc Synthesis of transparent conducting oxide coatings
US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US10378106B2 (en) * 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9379011B2 (en) * 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US20120237695A1 (en) * 2009-12-23 2012-09-20 2-Pye Solar, LLC Method and apparatus for depositing a thin film
US8637411B2 (en) * 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
TWI563582B (en) 2010-06-03 2016-12-21 Novellus Systems Inc Method of improving film non-uniformity and throughput
BE1019439A3 (fr) 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
TW201224190A (en) * 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
TWI541378B (zh) * 2010-10-16 2016-07-11 奧特科技公司 原子層沉積鍍膜系統及方法
US8465811B2 (en) * 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
CN103459660B (zh) 2011-04-07 2016-01-06 皮考逊公司 具有等离子体源的沉积反应器
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
KR101975071B1 (ko) 2011-09-23 2019-05-03 노벨러스 시스템즈, 인코포레이티드 플라즈마 활성화된 컨포멀 유전체 막 증착
US8912101B2 (en) * 2012-03-15 2014-12-16 Asm Ip Holding B.V. Method for forming Si-containing film using two precursors by ALD
RU2605408C2 (ru) * 2012-06-15 2016-12-20 Пикосан Ой Покрытие полотна подложки осаждением атомных слоев
DE102012221080A1 (de) 2012-11-19 2014-03-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements

Also Published As

Publication number Publication date
US20170342560A1 (en) 2017-11-30
EP3237650B1 (en) 2021-04-21
KR102659545B1 (ko) 2024-04-23
KR20230163589A (ko) 2023-11-30
SG11201703665WA (en) 2017-06-29
RU2017124639A3 (fi) 2019-05-08
WO2016102748A1 (en) 2016-06-30
TW201634736A (zh) 2016-10-01
RU2017124639A (ru) 2019-01-24
CN115961267A (zh) 2023-04-14
JP2018500462A (ja) 2018-01-11
KR20240056632A (ko) 2024-04-30
EP3237650A4 (en) 2018-01-17
ES2870613T3 (es) 2021-10-27
KR20170099904A (ko) 2017-09-01
JP6814136B2 (ja) 2021-01-13
US10619241B2 (en) 2020-04-14
EP3237650A1 (en) 2017-11-01
RU2702669C2 (ru) 2019-10-09
TWI684667B (zh) 2020-02-11
CN107109647A (zh) 2017-08-29
FI126970B (fi) 2017-08-31

Similar Documents

Publication Publication Date Title
FIC20230014I1 (fi) Foslevodopa ja foskarbidopa
KR20180084817A (ko) 항-siglec-9 항체 및 이의 이용 방법
EP3484818A4 (en) MULTI-ATOMIC LAYERED MATERIALS
LT3556777T (lt) Daugiaspecifiniai antikūno konstruktai
LT3148579T (lt) Anti-gitr antikūnai ir jų panaudojimo būdai
DK3560954T3 (da) Modificeret j-kæde
EP3298448A4 (en) OPTOGENETIC MICROSCOPE
IL247458A0 (en) Methods and compositions for increasing a t-effector cell to regulatory t cell ratio
LT3160952T (lt) Histono demetilazės inhibitoriai
DK3114141T3 (da) Insulinlignende vækstfaktor 1-receptor-specifikke antistoffer og anvendelse deraf
SI3182996T1 (sl) Postopki zdravljenja multiplega mieloma z imunomodulatornimi spojinami v kombinaciji s protitelesi
IL272924B1 (en) Methods for making and using endoxifen
PL3102503T3 (pl) Kartusz oraz sposób wytwarzania kartusza
FI20140361A7 (fi) Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti
DK3532170T3 (da) Aerosolspray indeholdende levedygtige bakteriearter
EP3480143A4 (en) TRANSPORTATION APPARATUS
FI20145641A7 (fi) Monikäyttöinen ilmalaiva ja ilmalaivaryhmä
DE112015003841A5 (de) Di- und triphosphat-propharmaka
FI20155399A7 (fi) Järjestely ja menetelmä sovituskopeille
FI20175156A7 (fi) Plasma-avusteisia atomikerroskasvatusmenetelmiä vähentyneellä kvartsi-pohjaisella kontaminaatiolla
IL249172A0 (en) Coating method and materials
KR102367120B9 (ko) 표면강화 투명기판 및 이의 제조방법
FI20165361A7 (fi) Laite ja menetelmä laitteen valmistamiseksi
EP3884914C0 (en) OVERMOLDABLE SUBSTRATE AND ITS USES
FI20145144A7 (fi) Kartoitusjärjestelmä ja menetelmä

Legal Events

Date Code Title Description
FG Patent granted

Ref document number: 126970

Country of ref document: FI

Kind code of ref document: B