[go: up one dir, main page]

NO20076105L - Fremgangsmate for produksjon av solcelle og solcelle - Google Patents

Fremgangsmate for produksjon av solcelle og solcelle

Info

Publication number
NO20076105L
NO20076105L NO20076105A NO20076105A NO20076105L NO 20076105 L NO20076105 L NO 20076105L NO 20076105 A NO20076105 A NO 20076105A NO 20076105 A NO20076105 A NO 20076105A NO 20076105 L NO20076105 L NO 20076105L
Authority
NO
Norway
Prior art keywords
solar cell
diffusion layer
conductivity
semiconductor substrate
coating material
Prior art date
Application number
NO20076105A
Other languages
English (en)
Norwegian (no)
Inventor
Hiroyuki Ohtsuka
Masatoshi Takahashi
Naoki Ishikawa
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of NO20076105L publication Critical patent/NO20076105L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
NO20076105A 2005-04-26 2007-11-26 Fremgangsmate for produksjon av solcelle og solcelle NO20076105L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005127898A JP2006310368A (ja) 2005-04-26 2005-04-26 太陽電池の製造方法及び太陽電池
PCT/JP2006/307429 WO2006117975A1 (fr) 2005-04-26 2006-04-07 Procédé de fabrication d’une cellule solaire et cellule solaire

Publications (1)

Publication Number Publication Date
NO20076105L true NO20076105L (no) 2008-01-25

Family

ID=37307779

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20076105A NO20076105L (no) 2005-04-26 2007-11-26 Fremgangsmate for produksjon av solcelle og solcelle

Country Status (10)

Country Link
US (1) US20090020156A1 (fr)
EP (1) EP1876650A1 (fr)
JP (1) JP2006310368A (fr)
KR (1) KR20080014751A (fr)
CN (1) CN101164173A (fr)
AU (1) AU2006243111A1 (fr)
NO (1) NO20076105L (fr)
RU (1) RU2007139436A (fr)
TW (1) TW200703699A (fr)
WO (1) WO2006117975A1 (fr)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101394739A (zh) * 2006-02-28 2009-03-25 西巴控股公司 抗微生物化合物
ATE441156T1 (de) * 2006-05-04 2009-09-15 Elektrobit Wireless Comm Ltd Verfahren zum betrieb eines rfid-netzwerks
PL2165371T3 (pl) * 2007-07-18 2012-08-31 Imec Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem
JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法
JP2009231595A (ja) * 2008-03-24 2009-10-08 Oki Data Corp 半導体素子製造方法
US20090239363A1 (en) * 2008-03-24 2009-09-24 Honeywell International, Inc. Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes
US7833808B2 (en) * 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
CN101960617B (zh) * 2008-03-27 2014-06-11 三菱电机株式会社 光电动势装置及其制造方法
CN103400898B (zh) * 2008-03-27 2016-01-20 三菱电机株式会社 光电动势装置的制造方法
DE102008019402A1 (de) * 2008-04-14 2009-10-15 Gebr. Schmid Gmbh & Co. Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
US8053867B2 (en) * 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US7820532B2 (en) * 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
TWI420679B (zh) * 2008-12-31 2013-12-21 Mosel Vitelic Inc 太陽能電池
US20100180939A1 (en) * 2009-01-22 2010-07-22 Sharma Pramod K Heat treatable magnesium fluoride inclusive coatings, coated articles including heat treatable magnesium fluoride inclusive coatings, and methods of making the same
KR101142861B1 (ko) * 2009-02-04 2012-05-08 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101110304B1 (ko) 2009-02-27 2012-02-15 주식회사 효성 반응성 이온식각을 이용한 태양전지의 제조방법
KR101145928B1 (ko) * 2009-03-11 2012-05-15 엘지전자 주식회사 태양 전지 및 태양 전지의 제조 방법
EP2409331A4 (fr) * 2009-03-20 2017-06-28 Intevac, Inc. Procédé de fabrication de pile solaire cristalline avancée à haute efficacité
CA2759708C (fr) * 2009-04-21 2019-06-18 Tetrasun, Inc. Structures de cellules solaires a efficacite elevee et leurs procedes de production
SM200900034B (it) * 2009-05-05 2012-05-03 Antonio Maroscia Metodo per la realizzazione di un dispositivo fotovoltaico e dispositivo fotovoltaico ottenuto con tale metodo
US8420517B2 (en) * 2009-07-02 2013-04-16 Innovalight, Inc. Methods of forming a multi-doped junction with silicon-containing particles
US20110003466A1 (en) * 2009-07-02 2011-01-06 Innovalight, Inc. Methods of forming a multi-doped junction with porous silicon
US7888158B1 (en) * 2009-07-21 2011-02-15 Sears Jr James B System and method for making a photovoltaic unit
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
KR101597825B1 (ko) * 2009-07-24 2016-02-25 엘지전자 주식회사 태양전지, 태양전지의 제조방법 및 열확산용 열처리 장치
JP2011187858A (ja) * 2010-03-11 2011-09-22 Shin-Etsu Chemical Co Ltd 太陽電池の製造方法及び太陽電池
FR2959870B1 (fr) * 2010-05-06 2012-05-18 Commissariat Energie Atomique Cellule photovoltaique comportant une zone suspendue par un motif conducteur et procede de realisation.
WO2012012167A1 (fr) * 2010-06-30 2012-01-26 Innovalight, Inc Procédés de formation d'une jonction flottante sur une cellule solaire avec une couche de masquage à particules
CN102339876B (zh) * 2010-07-23 2014-04-30 上海凯世通半导体有限公司 太阳能晶片及其制备方法
DE102010035582B4 (de) * 2010-08-27 2017-01-26 Universität Konstanz Verfahren zum Herstellen einer Solarzelle mit einer texturierten Frontseite sowie entsprechende Solarzelle
US8669169B2 (en) 2010-09-01 2014-03-11 Piquant Research Llc Diffusion sources from liquid precursors
CN102386247B (zh) * 2010-09-03 2013-07-31 上海凯世通半导体有限公司 太阳能晶片及其制备方法
CN102412335B (zh) * 2010-09-21 2014-11-05 上海凯世通半导体有限公司 太阳能晶片及其制备方法
KR20130129919A (ko) * 2010-11-17 2013-11-29 히타치가세이가부시끼가이샤 태양 전지의 제조 방법
KR101145472B1 (ko) * 2010-11-29 2012-05-15 현대중공업 주식회사 태양전지의 제조방법
KR101198430B1 (ko) 2010-12-31 2012-11-06 현대중공업 주식회사 양면 수광형 국부화 에미터 태양전지 및 그 제조 방법
KR101114198B1 (ko) 2010-12-31 2012-03-13 현대중공업 주식회사 국부화 에미터 태양전지 및 그 제조 방법
KR20120084104A (ko) * 2011-01-19 2012-07-27 엘지전자 주식회사 태양전지
KR101668402B1 (ko) * 2011-03-30 2016-10-28 한화케미칼 주식회사 태양 전지 제조 방법
KR20120137821A (ko) 2011-06-13 2012-12-24 엘지전자 주식회사 태양전지
KR101406339B1 (ko) * 2011-07-25 2014-06-16 한국에너지기술연구원 선택적 에미터층 제조방법, 이에 의하여 제조된 선택적 에미터층 및 이를 포함하는 실리콘 태양전지
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
KR101969032B1 (ko) * 2011-09-07 2019-04-15 엘지전자 주식회사 태양전지 및 이의 제조방법
JP2013093563A (ja) * 2011-10-04 2013-05-16 Shin Etsu Chem Co Ltd ホウ素拡散用塗布剤
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
JP5599379B2 (ja) * 2011-11-04 2014-10-01 信越化学工業株式会社 太陽電池素子の製造方法
US9493357B2 (en) 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
TWI424584B (zh) * 2011-11-30 2014-01-21 Au Optronics Corp 製作太陽能電池之方法
KR101838278B1 (ko) * 2011-12-23 2018-03-13 엘지전자 주식회사 태양 전지
US20130199604A1 (en) * 2012-02-06 2013-08-08 Silicon Solar Solutions Solar cells and methods of fabrication thereof
JP6076615B2 (ja) * 2012-04-27 2017-02-08 東京エレクトロン株式会社 不純物拡散方法、基板処理装置及び半導体装置の製造方法
KR101387718B1 (ko) 2012-05-07 2014-04-22 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP2013235942A (ja) * 2012-05-08 2013-11-21 Hitachi Chemical Co Ltd 不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
KR101879781B1 (ko) * 2012-05-11 2018-08-16 엘지전자 주식회사 태양 전지, 불순물층의 형성 방법 및 태양 전지의 제조 방법
KR101871273B1 (ko) * 2012-05-11 2018-08-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101921738B1 (ko) * 2012-06-26 2018-11-23 엘지전자 주식회사 태양 전지
KR101956734B1 (ko) * 2012-09-19 2019-03-11 엘지전자 주식회사 태양 전지 및 그의 제조 방법
US20150349156A1 (en) * 2012-12-18 2015-12-03 Pvg Solutions Inc. Solar battery cell and method of manufacturing the same
US9530923B2 (en) * 2012-12-21 2016-12-27 Sunpower Corporation Ion implantation of dopants for forming spatially located diffusion regions of solar cells
NL2010941C2 (en) * 2013-06-07 2014-12-09 Stichting Energie Photovoltaic cell and method for manufacturing such a photovoltaic cell.
US9960287B2 (en) 2014-02-11 2018-05-01 Picasolar, Inc. Solar cells and methods of fabrication thereof
JP2016092238A (ja) * 2014-11-05 2016-05-23 信越化学工業株式会社 太陽電池及びその製造方法
JP6502651B2 (ja) * 2014-11-13 2019-04-17 信越化学工業株式会社 太陽電池の製造方法及び太陽電池モジュールの製造方法
GB2535495A (en) * 2015-02-18 2016-08-24 Oclaro Tech Plc Dither free bias control
WO2016136474A1 (fr) * 2015-02-25 2016-09-01 東レ株式会社 Composition de diffusion d'impuretés de type p, procédé de fabrication d'élément semi-conducteur à l'aide de cette composition, cellule solaire, et procédé de fabrication de cette cellule solaire
JP6410951B2 (ja) * 2015-08-28 2018-10-24 三菱電機株式会社 太陽電池セルおよび太陽電池セルの製造方法
JP2017050520A (ja) * 2015-08-31 2017-03-09 株式会社島津製作所 半導体装置及びその製造方法
JP6270889B2 (ja) * 2016-03-16 2018-01-31 三菱電機株式会社 太陽電池の製造方法
WO2018021117A1 (fr) * 2016-07-26 2018-02-01 東レ株式会社 Procédé de production d'éléments semi-conducteurs et procédé de production de cellules solaires
JP2017059835A (ja) * 2016-10-14 2017-03-23 日立化成株式会社 不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
CN113169248B (zh) * 2018-12-07 2024-10-01 东丽株式会社 半导体元件的制造方法和太阳能电池的制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4374391A (en) * 1980-09-24 1983-02-15 Bell Telephone Laboratories, Incorporated Device fabrication procedure
JPS6366929A (ja) * 1986-09-08 1988-03-25 Tokyo Ohka Kogyo Co Ltd アンチモン拡散用シリカ系被膜形成組成物
JPH06105694B2 (ja) * 1987-08-13 1994-12-21 富士電機株式会社 ボロンの固相拡散方法
JPH05283352A (ja) * 1992-04-03 1993-10-29 Rohm Co Ltd 半導体装置の製造法
JPH08283100A (ja) * 1995-04-07 1996-10-29 Mitsubishi Materials Corp リン拡散用組成物
JPH09283458A (ja) * 1996-04-12 1997-10-31 Toshiba Corp 半導体用塗布拡散剤
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US6180869B1 (en) * 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
JP3639423B2 (ja) * 1997-12-26 2005-04-20 新日本無線株式会社 半導体熱拡散層の形成方法
JP2000091254A (ja) * 1998-09-11 2000-03-31 Oki Electric Ind Co Ltd Ｚｎ固相拡散方法およびこれを用いた発光素子
JP2000183379A (ja) * 1998-12-11 2000-06-30 Sanyo Electric Co Ltd 太陽電池の製造方法
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
JP2002124692A (ja) * 2000-10-13 2002-04-26 Hitachi Ltd 太陽電池およびその製造方法
JP4996025B2 (ja) * 2001-09-27 2012-08-08 三菱電機株式会社 太陽電池の製造方法
JP2004172271A (ja) * 2002-11-19 2004-06-17 Mitsubishi Electric Corp 太陽電池の製造方法及び太陽電池
JP2004221149A (ja) * 2003-01-10 2004-08-05 Hitachi Ltd 太陽電池の製造方法
JP2005072120A (ja) * 2003-08-21 2005-03-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR20080014751A (ko) 2008-02-14
US20090020156A1 (en) 2009-01-22
RU2007139436A (ru) 2009-06-10
JP2006310368A (ja) 2006-11-09
AU2006243111A1 (en) 2006-11-09
TW200703699A (en) 2007-01-16
EP1876650A1 (fr) 2008-01-09
WO2006117975A1 (fr) 2006-11-09
CN101164173A (zh) 2008-04-16

Similar Documents

Publication Publication Date Title
NO20076105L (no) Fremgangsmate for produksjon av solcelle og solcelle
NO20076104L (no) Fremgangsmate for produksjon av solcelle og solcelle, og fremgangsmate for produksjon av halvlederinnretning
CN101699633B (zh) 一种pin硅基薄膜太阳能电池及其制备方法
CN103700768A (zh) 一种钙钛矿结构太阳能电池及其制备方法
JP2010521800A5 (fr)
CN104201214A (zh) 一种背面钝化太阳能电池及其制备方法
RU2010137796A (ru) Солнечный элемент и способ и аппарат для его изготовления
US20160190375A1 (en) Hetero-junction solar cell and manufacturing method thereof
CN104037244B (zh) 一种晶硅太阳能电池钝化材料Al2O3浓度梯度掺杂ZnO薄膜及制备方法
CN103311323B (zh) 一种石墨烯/硅太阳电池及其制造方法
CN104851923A (zh) 一种提升晶体硅太阳能电池效率减反射膜制备方法
CN104538485A (zh) 一种双面电池的制备方法
CN105977342A (zh) 一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺
CN102339891A (zh) 一种p-i-n夹层结构InGaN太阳电池
CN104659150A (zh) 一种晶体硅太阳电池多层减反射膜的制备方法
CN103824899A (zh) 一种晶体硅低表面浓度发射极的实现方法
CN103337525B (zh) 抗pid效应的太阳能电池片及其制造方法
CN102769072B (zh) N型晶硅太阳能电池及其制备方法
CN105914244B (zh) 一种提高CZTS/CdS异质结整流比的方法
JP4183688B2 (ja) 光電変換装置の製造方法および光電変換装置
US20160240708A1 (en) Solar cell with a hetero-junction structure and method for manufacturing the same
CN103474541A (zh) 提高氮化硅基薄膜发光二极管发光效率的器件及制备方法
CN103035777A (zh) 一种改良的多晶硅太阳电池三层SiN减反膜的制备方法
CN104900412A (zh) 双界面调控的n型单晶硅的处理方法
CN102522453B (zh) 一种场效应晶体硅太阳能电池的制作方法

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application