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PL2165371T3 - Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem - Google Patents

Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem

Info

Publication number
PL2165371T3
PL2165371T3 PL08786243T PL08786243T PL2165371T3 PL 2165371 T3 PL2165371 T3 PL 2165371T3 PL 08786243 T PL08786243 T PL 08786243T PL 08786243 T PL08786243 T PL 08786243T PL 2165371 T3 PL2165371 T3 PL 2165371T3
Authority
PL
Poland
Prior art keywords
emitter
resulting therefrom
producing
structures resulting
emitter region
Prior art date
Application number
PL08786243T
Other languages
English (en)
Inventor
Nieuwenhuysen Kris Van
Filip Duerinckx
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Publication of PL2165371T3 publication Critical patent/PL2165371T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
PL08786243T 2007-07-18 2008-07-18 Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem PL2165371T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US95053107P 2007-07-18 2007-07-18
PCT/EP2008/059463 WO2009010585A2 (en) 2007-07-18 2008-07-18 Method for producing an emitter structure and emitter structures resulting therefrom
EP08786243A EP2165371B1 (en) 2007-07-18 2008-07-18 Method for producing an emitter structure and emitter structures resulting therefrom

Publications (1)

Publication Number Publication Date
PL2165371T3 true PL2165371T3 (pl) 2012-08-31

Family

ID=40260135

Family Applications (1)

Application Number Title Priority Date Filing Date
PL08786243T PL2165371T3 (pl) 2007-07-18 2008-07-18 Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem

Country Status (8)

Country Link
US (1) US9087957B2 (pl)
EP (1) EP2165371B1 (pl)
JP (1) JP5374504B2 (pl)
KR (1) KR20100032900A (pl)
AT (1) ATE547812T1 (pl)
ES (1) ES2382924T3 (pl)
PL (1) PL2165371T3 (pl)
WO (1) WO2009010585A2 (pl)

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US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8283557B2 (en) * 2009-03-10 2012-10-09 Silevo, Inc. Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
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US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
WO2011017659A1 (en) * 2009-08-06 2011-02-10 Energy Focus, Inc. Method of passivating and reducing reflectance of a photovoltaic cell
CN102074599B (zh) * 2009-09-07 2014-10-29 Lg电子株式会社 太阳能电池及其制造方法
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
WO2011061693A2 (en) * 2009-11-18 2011-05-26 Solar Wind Ltd. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8586862B2 (en) 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
EP2510551B1 (en) * 2009-12-09 2017-08-02 Solexel, Inc. Method for manufacturing back contact back junction solar cells
KR101579320B1 (ko) * 2010-05-12 2015-12-21 엘지전자 주식회사 태양 전지
KR101141578B1 (ko) * 2010-09-14 2012-05-17 (주)세미머티리얼즈 태양전지 제조방법.
EP2684210A4 (en) * 2011-03-08 2014-08-20 Alliance Sustainable Energy EFFICIENT PHOTOVOLTAIC MODULES OF BLACK SILICON WITH IMPROVED BLUE RESPONSE BEHAVIOR
US20120312361A1 (en) * 2011-06-08 2012-12-13 International Business Machines Corporation Emitter structure and fabrication method for silicon heterojunction solar cell
CN102243999A (zh) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 半导体器件制备过程中氮化硅层的制备方法
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
KR101860919B1 (ko) * 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9190549B2 (en) * 2012-02-28 2015-11-17 International Business Machines Corporation Solar cell made using a barrier layer between p-type and intrinsic layers
US9178098B2 (en) * 2012-02-29 2015-11-03 The Boeing Company Solar cell with delta doping layer
JP5546616B2 (ja) * 2012-05-14 2014-07-09 セリーボ， インコーポレイテッド トンネル酸化物を有する後面接合太陽電池
DE102013219603A1 (de) * 2013-09-27 2015-04-02 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle
JP6350858B2 (ja) * 2014-05-26 2018-07-04 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び太陽電池
JP5830147B1 (ja) * 2014-09-04 2015-12-09 信越化学工業株式会社 太陽電池及び太陽電池の製造方法
US9520507B2 (en) 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
KR101976421B1 (ko) * 2016-12-28 2019-05-09 엘지전자 주식회사 태양전지 제조방법
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Also Published As

Publication number Publication date
JP5374504B2 (ja) 2013-12-25
WO2009010585A2 (en) 2009-01-22
US20100139763A1 (en) 2010-06-10
WO2009010585A3 (en) 2009-05-28
EP2165371A2 (en) 2010-03-24
US9087957B2 (en) 2015-07-21
ES2382924T3 (es) 2012-06-14
EP2165371B1 (en) 2012-02-29
KR20100032900A (ko) 2010-03-26
ATE547812T1 (de) 2012-03-15
JP2010533969A (ja) 2010-10-28

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