| Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ... APL Materials 11 (8), 2023 | 136 | 2023 |
| Physical origin of transient negative capacitance in a ferroelectric capacitor SC Chang, UE Avci, DE Nikonov, S Manipatruni, IA Young Physical Review Applied 9 (1), 014010, 2018 | 109 | 2018 |
| Non-volatile clocked spin wave interconnect for beyond-CMOS nanomagnet pipelines S Dutta, SC Chang, N Kani, DE Nikonov, S Manipatruni, IA Young, ... Scientific reports 5 (1), 9861, 2015 | 101 | 2015 |
| Impact of oxygen vacancy content in ferroelectric HZO films on the device performance T Mittmann, M Materano, SC Chang, I Karpov, T Mikolajick, U Schroeder 2020 IEEE International Electron Devices Meeting (IEDM), 18.4. 1-18.4. 4, 2020 | 92 | 2020 |
| Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction M Si, Z Zhang, SC Chang, N Haratipour, D Zheng, J Li, UE Avci, PD Ye ACS nano 15 (3), 5689-5695, 2021 | 90 | 2021 |
| 3d-ferroelectric random access memory (3d-fram) S Shivaraman, SC Chang, AV Penumatcha, N HARATIPOUR, UE Avci US Patent App. 16/599,422, 2021 | 80 | 2021 |
| Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2020 | 71 | 2020 |
| Circuit simulation of magnetization dynamics and spin transport P Bonhomme, S Manipatruni, RM Iraei, S Rakheja, SC Chang, ... IEEE Transactions on Electron Devices 61 (5), 1553-1560, 2014 | 63 | 2014 |
| Theoretical approach to electroresistance in ferroelectric tunnel junctions SC Chang, A Naeemi, DE Nikonov, A Gruverman Physical Review Applied 7 (2), 024005, 2017 | 51 | 2017 |
| FeRAM using anti-ferroelectric capacitors for high-speed and high-density embedded memory SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ... 2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021 | 49 | 2021 |
| Impact of dimensional scaling and size effects on spin transport in copper and aluminum interconnects S Rakheja, SC Chang, A Naeemi IEEE Transactions on Electron Devices 60 (11), 3913-3919, 2013 | 48 | 2013 |
| Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering N HARATIPOUR, SC Chang, CC Lin, J Kavalieros, U Avci, I Young US Patent 11,063,131, 2021 | 44 | 2021 |
| Design and analysis of Si interconnects for all-spin logic SC Chang, S Manipatruni, DE Nikonov, IA Young, A Naeemi IEEE Transactions on Magnetics 50 (9), 1-13, 2014 | 44 | 2014 |
| Design and analysis of copper and aluminum interconnects for all-spin logic SC Chang, RM Iraei, S Manipatruni, DE Nikonov, IA Young, A Naeemi IEEE Transactions on Electron Devices 61 (8), 2905-2911, 2014 | 42 | 2014 |
| A thermodynamic perspective of negative-capacitance field-effect transistors SC Chang, UE Avci, DE Nikonov, IA Young IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017 | 40 | 2017 |
| Hafnia-based FeRAM: A path toward ultra-high density for next-generation high-speed embedded memory N Haratipour, SC Chang, S Shivaraman, C Neumann, YC Liao, ... 2022 International Electron Devices Meeting (IEDM), 6.7. 1-6.7. 4, 2022 | 38 | 2022 |
| A theoretical study of multidomain ferroelectric switching dynamics with a physics-based SPICE circuit model for phase-field simulations CS Hsu, SC Chang, DE Nikonov, IA Young, A Naeemi IEEE Transactions on Electron Devices 67 (7), 2952-2959, 2020 | 22 | 2020 |
| Understanding the switching mechanisms of the antiferromagnet/ferromagnet heterojunction YC Liao, DE Nikonov, S Dutta, SC Chang, CS Hsu, IA Young, A Naeemi Nano Letters 20 (11), 7919-7926, 2020 | 18 | 2020 |
| A model study of an error-free magnetization reversal through dipolar coupling in a two-magnet system N Kani, SC Chang, S Dutta, A Naeemi IEEE Transactions on Magnetics 52 (2), 1-12, 2015 | 18 | 2015 |
| Scaling limits on all-spin logic SC Chang, N Kani, S Manipatruni, DE Nikonov, IA Young, A Naeemi IEEE Transactions on Magnetics 52 (7), 1-4, 2016 | 17 | 2016 |
Uygar E. AvciComponents Research, Intel Corp.Verified email at intel.com
