| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 179 | 2018 |
| Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer K Oguz, ML Doczy, B Doyle, U Shah, DL Kencke, RG MOJARAD, ... US Patent 8,836,056, 2014 | 84 | 2014 |
| Balancing energy barrier between states in perpendicular magnetic tunnel junctions CC Kuo, BS Doyle, A Raychowdhury, RG Mojarad, K Oguz US Patent 9,472,748, 2016 | 81 | 2016 |
| Metrology and Diagnostic Techniques for Nanoelectronics Z Ma, DG Seiler Jenny Stanford Publishing, 2017 | 77 | 2017 |
| Magnetoresistance in magnetic tunnel junctions with an organic barrier and an MgO spin filter G Szulczewski, H Tokuc, K Oguz, JMD Coey Applied Physics Letters 95 (20), 2009 | 70 | 2009 |
| Magnetic dead layers in sputtered Co40Fe40B20 films K Oguz, P Jivrajka, M Venkatesan, G Feng, JMD Coey Journal of Applied Physics 103 (7), 2008 | 63 | 2008 |
| Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes H Kurt, K Rode, K Oguz, M Boese, CC Faulkner, JMD Coey Applied Physics Letters 96 (26), 2010 | 52 | 2010 |
| Layer transferred ferroelectric memory devices KP O'Brien, BS Doyle, K Oguz, CC Kuo, ML Doczy, TK Indukuri US Patent App. 16/082,261, 2019 | 50 | 2019 |
| Perpendicular magnetic anisotropy in CoFeB/Pd bilayers C Fowley, N Decorde, K Oguz, K Rode, H Kurt, JMD Coey IEEE transactions on magnetics 46 (6), 2116-2118, 2010 | 44 | 2010 |
| CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 35 | 2020 |
| Giant tunneling magnetoresistance with electron beam evaporated MgO barrier and CoFeB electrodes H Kurt, K Oguz, T Niizeki, JMD Coey Journal of Applied Physics 107 (8), 2010 | 34 | 2010 |
| Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same BS Doyle, CC Kuo, K Oguz, U Shah, EV Karpov, RG Mojarad, ML Doczy, ... US Patent 8,796,797, 2014 | 32 | 2014 |
| Electric field induced changes in the coercivity of a thin-film ferromagnet C Fowley, K Rode, K Oguz, H Kurt, JMD Coey Journal of Physics D: Applied Physics 44 (30), 305001, 2011 | 30 | 2011 |
| Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same BS Doyle, DL Kencke, CC Kuo, U Shah, K Oguz, ML Doczy, S Suri, ... US Patent 8,786,040, 2014 | 26 | 2014 |
| Spin orbit torque (SOT) memory devices and their methods of fabrication N Sato, A SMITH, T Gosavi, S Manipatruni, K Oguz, K O'Brien, T RAHMAN, ... US Patent 11,367,749, 2022 | 25 | 2022 |
| Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication K Oguz, T Gosavi, S Manipatruni, C Kuo, M Doczy, K O'Brien US Patent 11,257,613, 2022 | 25 | 2022 |
| Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers CC Kuo, K Oguz, ML Doczy, BS Doyle, S Suri, RS Chau, DL Kencke, ... US Patent App. 14/039,668, 2015 | 25 | 2015 |
| Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion K O'Brien, K Oguz, N Sato, C Kuo, M Doczy US Patent 11,430,943, 2022 | 24 | 2022 |
| Investigation of extrinsic damping caused by magnetic dead layer in Ta-CoFeB-MgO multilayers with perpendicular anisotropy N Sato, KP O'Brien, K Millard, B Doyle, K Oguz Journal of Applied Physics 119 (9), 2016 | 23 | 2016 |
| Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory T Gosavi, S Manipatruni, K Oguz, N Sato, K O'Brien, B Buford, C Wiegand, ... US Patent 11,476,412, 2022 | 21 | 2022 |
David L. KenckeIntel CorporationVerified email at intel.com
