| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 179 | 2018 |
| The impact of thermal boundary resistance in phase-change memory devices JP Reifenberg, DL Kencke, KE Goodson IEEE Electron Device Letters 29 (10), 1112-1114, 2008 | 152 | 2008 |
| Floating body cell with independently-controlled double gates for high density memory I Ban, UE Avci, U Shah, CE Barns, DL Kencke, P Chang 2006 International Electron Devices Meeting, 1-4, 2006 | 137 | 2006 |
| Floating body memory cell having gates favoring different conductivity type regions PLD Chang, UE Avci, DL Kencke, I Ban US Patent 8,217,435, 2012 | 132 | 2012 |
| Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array D Xu, TA Lowrey, DL Kencke US Patent 6,462,984, 2002 | 126 | 2002 |
| Floating gate transistor having buried strained silicon germanium channel layer DL Kencke, SK Banerjee US Patent 6,313,486, 2001 | 93 | 2001 |
| Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer K Oguz, ML Doczy, B Doyle, U Shah, DL Kencke, RG MOJARAD, ... US Patent 8,836,056, 2014 | 84 | 2014 |
| Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability Q Ouyang, XD Chen, S Mudanai, DL Kencke, X Wang, AF Tasch, ... 2000 International Conference on Simulation Semiconductor Processes and …, 2000 | 66 | 2000 |
| Systems and methods for distributed electronic communication and configuration A Gillespie, C McGreal, D Smith US Patent 10,225,217, 2019 | 61* | 2019 |
| Random charge effects for PMOS NBTI in ultra-small gate area devices M Agostinelli, S Pae, W Yang, C Prasad, D Kencke, S Ramey, E Snyder, ... 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005 | 49 | 2005 |
| Vertical channel floating gate transistor having silicon germanium channel layer DL Kencke, SK Banerjee US Patent 6,313,487, 2001 | 48 | 2001 |
| Substrate-current-induced hot electron (SCIHE) injection: A new convergence scheme for flash memory CY Hu, DL Kencke, SK Banerjee, R Richart, B Bandyopadhyay, B Moore, ... Proceedings of International Electron Devices Meeting, 283-286, 1995 | 47 | 1995 |
| The role of interfaces in damascene phase-change memory DL Kencke, IV Karpov, BG Johnson, SJ Lee, DC Kau, SJ Hudgens, ... 2007 IEEE International Electron Devices Meeting, 323-326, 2007 | 45 | 2007 |
| Floating body cell (FBC) memory for 16-nm technology with low variation on thin silicon and 10-nm BOX UE Avci, I Ban, DL Kencke, PLD Chang 2008 IEEE International SOI Conference, 29-30, 2008 | 43 | 2008 |
| Selector for low voltage embedded memory C Kuo, EV Karpov, BS Doyle, DL Kencke, RS Chau US Patent 9,543,507, 2017 | 37 | 2017 |
| Band alignments in sidewall strained Si/strained SiGe heterostructures X Wang, DL Kencke, KC Liu, LF Register, SK Banerjee Solid-State Electronics 46 (12), 2021-2025, 2002 | 37 | 2002 |
| Challenges for on-chip optical interconnects KC Cadien, MR Reshotko, BA Block, AM Bowen, DL Kencke, P Davids Optoelectronic Integration on Silicon II 5730, 133-143, 2005 | 35 | 2005 |
| A novel sidewall strained-Si channel nMOSFET KC Liu, X Wang, E Quinones, X Chen, XD Chen, D Kencke, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 34 | 1999 |
| Bandgap engineering in deep submicron vertical pMOSFETs Q Ouyang, XD Chen, S Mudanai, DL Kencke, AF Tasch, SK Banerjee 58th DRC. Device Research Conference. Conference Digest (Cat. No. 00TH8526 …, 2000 | 32 | 2000 |
| A scaled floating body cell (FBC) memory with high-k+ metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond I Ban, UE Avci, DL Kencke, PLD Chang 2008 Symposium on VLSI Technology, 92-93, 2008 | 31 | 2008 |
Uygar E. AvciComponents Research, Intel Corp.Verified email at intel.com
