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Chia-Ching LIN
Chia-Ching LIN
Components Research, Intel Corp.
Verified email at intel.com
Title
Cited by
Cited by
Year
Scalable energy-efficient magnetoelectric spin–orbit logic
S Manipatruni, DE Nikonov, CC Lin, TA Gosavi, H Liu, B Prasad, ...
Nature 565 (7737), 35-42, 2019
9062019
International Electron Devices Meeting (IEDM)
KW Lee, T Nakamura, T One, Y Yamada, T Mizukusa, H Hasimoto, ...
International Electron Devices Meeting (IEDM), 165-168, 2000
1692000
Enabling ultra-low-voltage switching in BaTiO3
Y Jiang, E Parsonnet, A Qualls, W Zhao, S Susarla, D Pesquera, ...
Nature materials 21 (7), 779-785, 2022
1352022
Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures
VT Pham, I Groen, S Manipatruni, WY Choi, DE Nikonov, E Sagasta, ...
Nature Electronics, 1-7, 2020
922020
Ultralow voltage manipulation of ferromagnetism
B Prasad, YL Huang, RV Chopdekar, Z Chen, J Steffes, S Das, Q Li, ...
Advanced materials 32 (28), 2001943, 2020
872020
Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
S Manipatruni, DE Nikonov, CC Lin, B Prasad, YL Huang, AR Damodaran, ...
Science Advances 4 (11), eaat4229, 2018
862018
Spin–Charge Interconversion in KTaO3 2D Electron Gases
LM Vicente‐Arche, J Bréhin, S Varotto, M Cosset‐Cheneau, S Mallik, ...
Advanced Materials 33 (43), 2102102, 2021
812021
Manipulating magnetoelectric energy landscape in multiferroics
YL Huang, D Nikonov, C Addiego, RV Chopdekar, B Prasad, L Zhang, ...
Nature communications 11 (1), 2836, 2020
782020
Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field
CC Lin, AV Penumatcha, Y Gao, VQ Diep, J Appenzeller, Z Chen
Nano letters 13 (11), 5177-5181, 2013
722013
Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM
SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2020
712020
Toward Intrinsic Ferroelectric Switching in Multiferroic
E Parsonnet, YL Huang, T Gosavi, A Qualls, D Nikonov, CC Lin, I Young, ...
Physical review letters 125 (6), 067601, 2020
662020
Tunable charge to spin conversion in strontium iridate thin films
AS Everhardt, M Dc, X Huang, S Sayed, TA Gosavi, Y Tang, CC Lin, ...
Physical Review Materials 3 (5), 051201, 2019
662019
Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects
CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ...
2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022
502022
Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
DC Vaz, CC Lin, JJ Plombon, WY Choi, I Groen, IC Arango, A Chuvilin, ...
Nature Communications 15 (1), 1902, 2024
482024
Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering
N HARATIPOUR, SC Chang, CC Lin, J Kavalieros, U Avci, I Young
US Patent 11,063,131, 2021
442021
Improvement of spin transfer torque in asymmetric graphene devices
CC Lin, Y Gao, AV Penumatcha, VQ Diep, J Appenzeller, Z Chen
ACS nano 8 (4), 3807-3812, 2014
332014
Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2
CJ Dorow, T Schram, Q Smets, KP O’Brien, K Maxey, CC Lin, L Panarella, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
322023
Metal/ two-dimensional electron gases for spin-to-charge conversion
LM Vicente-Arche, S Mallik, M Cosset-Cheneau, P Noël, DC Vaz, F Trier, ...
Physical Review Materials 5 (6), 064005, 2021
322021
300 mm MOCVD 2D CMOS materials for more (than) Moore scaling
K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
312022
High mobility TMD NMOS and PMOS transistors and GAA architecture for ultimate CMOS scaling
A Penumatcha, KP O’Brien, K Maxey, W Mortelmans, R Steinhardt, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
222023
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Articles 1–20