| High Performance Multilayer MoS2 Transistors with Scandium Contacts S Das, HY Chen, AV Penumatcha, J Appenzeller Nano letters 13 (1), 100-105, 2013 | 2976 | 2013 |
| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 939 | 2021 |
| Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model AV Penumatcha, RB Salazar, J Appenzeller Nature communications 6 (1), 8948, 2015 | 216 | 2015 |
| Strain engineering for transition metal dichalcogenides based field effect transistors T Shen, AV Penumatcha, J Appenzeller ACS nano 10 (4), 4712-4718, 2016 | 180 | 2016 |
| Advancing 2D monolayer CMOS through contact, channel and interface engineering KP O'Brien, CJ Dorow, A Penumatcha, K Maxey, S Lee, CH Naylor, ... 2021 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2021 | 129 | 2021 |
| Process integration and future outlook of 2D transistors KP O’Brien, CH Naylor, C Dorow, K Maxey, AV Penumatcha, A Vyatskikh, ... nature communications 14 (1), 6400, 2023 | 123 | 2023 |
| 3d-ferroelectric random access memory (3d-fram) S Shivaraman, SC Chang, AV Penumatcha, N HARATIPOUR, UE Avci US Patent App. 16/599,422, 2021 | 80 | 2021 |
| Advancing monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ... IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021 | 79 | 2021 |
| Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field CC Lin, AV Penumatcha, Y Gao, VQ Diep, J Appenzeller, Z Chen Nano letters 13 (11), 5177-5181, 2013 | 72 | 2013 |
| Limitations of the High-Low C-V Technique for MOS Interfaces With Large Time Constant Dispersion AV Penumatcha, S Swandono, JA Cooper IEEE transactions on electron devices 60 (3), 923-926, 2013 | 71 | 2013 |
| The Origins and Characteristics of the Threshold Voltage Variability of Quasi-Ballistic Single-Walled Carbon Nanotube Field-Effect Transistors Q Cao, SJ Han, AV Penumatcha, MM Frank, GS Tulevski, J Tersoff, ... ACS nano, 2015 | 65 | 2015 |
| Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ... 2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022 | 50 | 2022 |
| Improvement of spin transfer torque in asymmetric graphene devices CC Lin, Y Gao, AV Penumatcha, VQ Diep, J Appenzeller, Z Chen ACS nano 8 (4), 3807-3812, 2014 | 33 | 2014 |
| Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2 CJ Dorow, T Schram, Q Smets, KP O’Brien, K Maxey, CC Lin, L Panarella, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 32 | 2023 |
| 300 mm MOCVD 2D CMOS materials for more (than) Moore scaling K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 31 | 2022 |
| Scaling of device variability and subthreshold swing in ballistic carbon nanotube transistors Q Cao, J Tersoff, SJ Han, AV Penumatcha Physical Review Applied 4 (2), 024022, 2015 | 24 | 2015 |
| High mobility TMD NMOS and PMOS transistors and GAA architecture for ultimate CMOS scaling A Penumatcha, KP O’Brien, K Maxey, W Mortelmans, R Steinhardt, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 22 | 2023 |
| Record Performance in GAA 2D NMOS and PMOS using Monolayer MoS2 and WSe2 with scaled contact and gate length W Mortelmans, P Buragohain, C Rogan, A Kitamura, CJ Dorow, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 18 | 2024 |
| Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses A Provias, T Knobloch, A Kitamura, KP O’Brien, CJ Dorow, D Waldhoer, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 14 | 2023 |
| Characterization and closed-form modeling of edge/top/hybrid metal-2D semiconductor contacts A Pal, V Mishra, J Weber, K Krishnaswamy, K Ghosh, AV Penumatcha, ... 2022 International electron devices meeting (IEDM), 28.5. 1-28.5. 4, 2022 | 13 | 2022 |
Chia-Ching LINComponents Research, Intel Corp.Verified email at intel.com
