| Richardson’s constant in inhomogeneous silicon carbide Schottky contacts F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni Journal of applied Physics 93 (11), 9137-9144, 2003 | 304 | 2003 |
| The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay F Cappuzzello, C Agodi, M Cavallaro, D Carbone, S Tudisco, D Lo Presti, ... The European Physical Journal A 54 (5), 72, 2018 | 236 | 2018 |
| Mechanisms of growth and defect properties of epitaxial SiC F La Via, M Camarda, A La Magna Applied Physics Reviews 1 (3), 2014 | 187 | 2014 |
| Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide F La Via, F Roccaforte, A Makhtari, V Raineri, P Musumeci, L Calcagno Microelectronic Engineering 60 (1-2), 269-282, 2002 | 180 | 2002 |
| From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction F La Via, A Severino, R Anzalone, C Bongiorno, G Litrico, M Mauceri, ... Materials Science in Semiconductor Processing 78, 57-68, 2018 | 165 | 2018 |
| Ohmic contacts to SiC F Roccaforte, F La Via, V Raineri International journal of high speed electronics and systems 15 (04), 781-820, 2005 | 121 | 2005 |
| 4H SiC epitaxial growth with chlorine addition F La Via, G Galvagno, G Foti, M Mauceri, S Leone, G Pistone, ... Chemical vapor deposition 12 (8‐9), 509-515, 2006 | 118 | 2006 |
| Highly reproducible ideal SiC Schottky rectifiers: Effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height F Roccaforte, F La Via, V Raineri, P Musumeci, L Calcagno, ... Applied Physics A 77 (6), 827-833, 2003 | 106 | 2003 |
| SiCILIA—silicon carbide detectors for intense luminosity investigations and applications S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ... Sensors 18 (7), 2289, 2018 | 100 | 2018 |
| Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates A Severino, G D’arrigo, C Bongiorno, S Scalese, F La Via, G Foti Journal of Applied Physics 102 (2), 2007 | 100 | 2007 |
| Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem? F La Via, F Roccaforte, V Raineri, M Mauceri, A Ruggiero, P Musumeci, ... Microelectronic Engineering 70 (2-4), 519-523, 2003 | 98 | 2003 |
| 4H-SiC epitaxial layer growth by trichlorosilane (TCS) F La Via, G Izzo, M Mauceri, G Pistone, G Condorelli, L Perdicaro, ... Journal of Crystal Growth 311 (1), 107-113, 2008 | 91 | 2008 |
| Emerging SiC applications beyond power electronic devices F La Via, D Alquier, F Giannazzo, T Kimoto, P Neudeck, H Ou, ... Micromachines 14 (6), 1200, 2023 | 85 | 2023 |
| Improvement of high temperature stability of nickel contacts on n-type 6H–SiC F Roccaforte, F La Via, V Raineri, L Calcagno, P Musumeci Applied surface science 184 (1-4), 295-298, 2001 | 85 | 2001 |
| Structural and electrical properties of Ni∕ Ti Schottky contacts on silicon carbide upon thermal annealing F Roccaforte, F La Via, A Baeri, V Raineri, L Calcagno, F Mangano Journal of applied physics 96 (8), 4313-4318, 2004 | 81 | 2004 |
| High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ... Thin Solid Films 518 (6), S165-S169, 2010 | 80 | 2010 |
| High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas M Cutroneo, P Musumeci, M Zimbone, L Torrisi, F La Via, D Margarone, ... Journal of Materials Research 28 (1), 87-93, 2013 | 74 | 2013 |
| Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier L Calcagno, A Ruggiero, F Roccaforte, F La Via Journal of Applied Physics 98 (2), 2005 | 73 | 2005 |
| New approaches and understandings in the growth of cubic silicon carbide FL Via, M Zimbone, C Bongiorno, A La Magna, G Fisicaro, I Deretzis, ... Materials 14 (18), 5348, 2021 | 68 | 2021 |
| Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ... Journal of Applied Physics 105 (8), 2009 | 68 | 2009 |
massimo camardaLaboratory for Micro- and Nanotechnology Paul Scherrer InstituteVerified email at psi.ch
