| Advances in silicon carbide processing and applications SE Saddow, AK Agarwal Artech House, 2004 | 545 | 2004 |
| Silicon carbide biotechnology: a biocompatible semiconductor for advanced biomedical devices and applications SE Saddow Elsevier, 2011 | 264 | 2011 |
| Silicon carbide: a versatile material for biosensor applications A Oliveros, A Guiseppi-Elie, SE Saddow Biomedical microdevices 15 (2), 353-368, 2013 | 224 | 2013 |
| Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC CM Tanner, YC Perng, C Frewin, SE Saddow, JP Chang Applied Physics Letters 91 (20), 2007 | 222 | 2007 |
| 4H–SiC photoconductive switching devices for use in high-power applications S Doǧan, A Teke, D Huang, H Morkoç, CB Roberts, J Parish, B Ganguly, ... Applied physics letters 82 (18), 3107-3109, 2003 | 148 | 2003 |
| Biocompatibility and wettability of crystalline SiC and Si surfaces C Coletti, MJ Jaroszeski, A Pallaoro, AM Hoff, S Iannotta, SE Saddow 2007 29th Annual International Conference of the IEEE Engineering in …, 2007 | 109 | 2007 |
| Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates M Mynbaeva, SE Saddow, G Melnychuk, I Nikitina, M Scheglov, ... Applied Physics Letters 78 (1), 117-119, 2001 | 87 | 2001 |
| Emerging SiC applications beyond power electronic devices F La Via, D Alquier, F Giannazzo, T Kimoto, P Neudeck, H Ou, ... Micromachines 14 (6), 1200, 2023 | 85 | 2023 |
| High growth rates (> 30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor RL Myers, Y Shishkin, O Kordina, SE Saddow Journal of Crystal Growth 285 (4), 486-490, 2005 | 77 | 2005 |
| Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching S Soubatch, SE Saddow, SP Rao, WY Lee, M Konuma, U Starke Materials Science Forum 483, 761-764, 2005 | 74 | 2005 |
| Single-crystal silicon carbide: A biocompatible and hemocompatible semiconductor for advanced biomedical applications SE Saddow, CL Frewin, C Coletti, N Schettini, E Weeber, A Oliveros, ... Materials Science Forum 679, 824-830, 2011 | 72 | 2011 |
| Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson Applied Physics Letters 78 (14), 2073-2075, 2001 | 69 | 2001 |
| Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ... Journal of Applied Physics 105 (8), 2009 | 68 | 2009 |
| Silicon carbide technology for advanced human healthcare applications SE Saddow Micromachines 13 (3), 346, 2022 | 66 | 2022 |
| Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via Journal of Microelectromechanical Systems 20 (3), 745-752, 2011 | 61 | 2011 |
| A comprehensive study of hydrogen etching on the major SiC polytypes and crystal orientations CL Frewin, C Coletti, C Riedl, U Starke, SE Saddow Materials science forum 615, 589-592, 2009 | 60 | 2009 |
| Increased growth rate in a SiC CVD reactor using HCl as a growth additive RL Myers-Ward, O Kordina, Z Shishkin, SP Rao, R Everly, SE Saddow Materials Science Forum 483, 73-76, 2005 | 58 | 2005 |
| Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates CL Frewin, M Jaroszeski, E Weeber, KE Muffly, A Kumar, M Peters, ... Journal of Molecular Recognition: An Interdisciplinary Journal 22 (5), 380-388, 2009 | 57 | 2009 |
| 3C-SiC film growth on Si substrates A Severino, C Locke, R Anzalone, M Camarda, N Piluso, A La Magna, ... ECS Transactions 35 (6), 99, 2011 | 54 | 2011 |
| Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via Diamond and related materials 18 (12), 1440-1449, 2009 | 54 | 2009 |
Christopher L. FrewinUniversity of Texas at DallasVerified email at UTDallas.edu
