| Mechanisms of growth and defect properties of epitaxial SiC F La Via, M Camarda, A La Magna Applied Physics Reviews 1 (3), 2014 | 187 | 2014 |
| SiCILIA—silicon carbide detectors for intense luminosity investigations and applications S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ... Sensors 18 (7), 2289, 2018 | 100 | 2018 |
| High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ... Thin Solid Films 518 (6), S165-S169, 2010 | 80 | 2010 |
| The role of dielectrophoresis for cancer diagnosis and prognosis GI Russo, N Musso, A Romano, G Caruso, S Petralia, L Lanzano, ... Cancers 14 (1), 198, 2021 | 73 | 2021 |
| Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via Journal of Microelectromechanical Systems 20 (3), 745-752, 2011 | 61 | 2011 |
| A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures M Camarda, A La Magna, F La Via Journal of Computational Physics 227 (2), 1075-1093, 2007 | 58 | 2007 |
| 3C-SiC film growth on Si substrates A Severino, C Locke, R Anzalone, M Camarda, N Piluso, A La Magna, ... ECS Transactions 35 (6), 99, 2011 | 54 | 2011 |
| Carbon nanotube-based sensing devices for human Arginase-1 detection S Baldo, S Buccheri, A Ballo, M Camarda, A La Magna, ME Castagna, ... Sensing and bio-sensing research 7, 168-173, 2016 | 46 | 2016 |
| First characterization of novel silicon carbide detectors with ultra-high dose rate electron beams for FLASH radiotherapy F Romano, G Milluzzo, F Di Martino, MC D’Oca, G Felici, F Galante, ... Applied Sciences 13 (5), 2986, 2023 | 45 | 2023 |
| Defect influence on heteroepitaxial 3C-SiC Young’s modulus R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’arrigo Electrochemical and Solid-State Letters 14 (4), H161, 2011 | 44 | 2011 |
| Optically active defects at the Si C/Si O2 interface BC Johnson, J Woerle, D Haasmann, CTK Lew, RA Parker, H Knowles, ... Physical Review Applied 12 (4), 044024, 2019 | 37 | 2019 |
| Two-dimensional defect mapping of the interface J Woerle, BC Johnson, C Bongiorno, K Yamasue, G Ferro, D Dutta, ... Physical Review Materials 3 (8), 084602, 2019 | 37 | 2019 |
| Silicon carbide X-ray beam position monitors for synchrotron applications S Nida, A Tsibizov, T Ziemann, J Woerle, A Moesch, C Schulze-Briese, ... Synchrotron Radiation 26 (1), 28-35, 2019 | 36 | 2019 |
| Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via Journal of crystal growth 310 (5), 971-975, 2008 | 36 | 2008 |
| Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations I Deretzis, M Camarda, F La Via, A La Magna Physical Review B—Condensed Matter and Materials Physics 85 (23), 235310, 2012 | 34 | 2012 |
| Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111) Si A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, ... Applied physics letters 94 (10), 2009 | 34 | 2009 |
| Structural and electronic characterization of (2, 33) bar-shaped stacking fault in 4H-SiC epitaxial layers M Camarda, A Canino, A La Magna, F La Via, G Feng, T Kimoto, M Aoki, ... Applied Physics Letters 98 (5), 2011 | 33 | 2011 |
| Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET D Dutta, DS De, D Fan, S Roy, G Alfieri, M Camarda, M Amsler, ... Applied Physics Letters 115 (10), 2019 | 32 | 2019 |
| Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (0 0 1) for high-power MOSFET applications R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, ... Materials Science and Engineering: B 198, 14-19, 2015 | 31 | 2015 |
| Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC M Camarda, A La Magna, A Severino, F La Via Thin Solid Films 518 (6), S159-S161, 2010 | 30 | 2010 |
