| From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction F La Via, A Severino, R Anzalone, C Bongiorno, G Litrico, M Mauceri, ... Materials Science in Semiconductor Processing 78, 57-68, 2018 | 165 | 2018 |
| New approaches and understandings in the growth of cubic silicon carbide FL Via, M Zimbone, C Bongiorno, A La Magna, G Fisicaro, I Deretzis, ... Materials 14 (18), 5348, 2021 | 68 | 2021 |
| Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ... Journal of Applied Physics 105 (8), 2009 | 68 | 2009 |
| Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via Journal of Microelectromechanical Systems 20 (3), 745-752, 2011 | 61 | 2011 |
| 3C-SiC film growth on Si substrates A Severino, C Locke, R Anzalone, M Camarda, N Piluso, A La Magna, ... ECS Transactions 35 (6), 99, 2011 | 54 | 2011 |
| Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via Diamond and related materials 18 (12), 1440-1449, 2009 | 54 | 2009 |
| Defect influence on heteroepitaxial 3C-SiC Young’s modulus R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’arrigo Electrochemical and Solid-State Letters 14 (4), H161, 2011 | 44 | 2011 |
| Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111) Si A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, ... Applied physics letters 94 (10), 2009 | 34 | 2009 |
| Carbonization and transition layer effects on 3C-SiC film residual stress R Anzalone, G Litrico, N Piluso, R Reitano, A Alberti, P Fiorenza, S Coffa, ... Journal of Crystal Growth 473, 11-19, 2017 | 32 | 2017 |
| Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (0 0 1) for high-power MOSFET applications R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, ... Materials Science and Engineering: B 198, 14-19, 2015 | 31 | 2015 |
| Temperature investigation on 3C-SiC homo-epitaxy on four-inch wafers R Anzalone, M Zimbone, C Calabretta, M Mauceri, A Alberti, R Reitano, ... Materials 12 (20), 3293, 2019 | 28 | 2019 |
| Growth rate effect on 3C-SiC film residual stress on (100) Si substrates R Anzalone, C Locke, J Carballo, N Piluso, A Severino, G D'Arrigo, ... Materials Science Forum 645, 143-146, 2010 | 27 | 2010 |
| Production of multi-MeV per nucleon ions in the controlled amount of matter mode (CAM) by using causally isolated targets C Strangio, A Caruso, D Neely, PL Andreoli, R Anzalone, R Clarke, ... Laser and Particle Beams 25 (1), 85-91, 2007 | 26 | 2007 |
| Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins R Anzalone, C Bongiorno, A Severino, G D’Arrigo, G Abbondanza, G Foti, ... Applied Physics Letters 92 (22), 2008 | 25 | 2008 |
| Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: Application to polynomial electrodes M Camarda, G Fisicaro, R Anzalone, S Scalese, A Alberti, F La Via, ... Biomedical engineering online 13 (1), 71, 2014 | 23 | 2014 |
| Raman characterization of doped 3C-SiC/Si for different silicon substrates and C/Si ratios N Piluso, A Severino, M Camarda, R Anzalone, A Canino, G Condorelli, ... Materials Science Forum 645, 255-258, 2010 | 23 | 2010 |
| Low stress heteroepitaxial 3C-SiC films characterized by microstructure fabrication and finite elements analysis R Anzalone, M Camarda, C Locke, D Alquier, A Severino, M Italia, ... Journal of The Electrochemical Society 157 (4), H438, 2010 | 23 | 2010 |
| 3C-SiС hetero-epitaxially grown on silicon compliance substrates and new 3C-SiС substrates for sustainable wide-band-gap power devices (CHALLENGE) F La Via, F Roccaforte, A La Magna, R Nipoti, F Mancarella, PJ Wellmann, ... Materials Science Forum 924, 913-918, 2018 | 19 | 2018 |
| Hydrogen etching influence on 4H-SiC homo-epitaxial layer for high power device R Anzalone, N Piluso, M Salanitri, S Lorenti, G Arena, S Coffa Materials Science Forum 897, 71-74, 2017 | 18 | 2017 |
| 3C-SiC growth on inverted silicon pyramids patterned substrate M Zimbone, M Zielinski, C Bongiorno, C Calabretta, R Anzalone, ... Materials 12 (20), 3407, 2019 | 17 | 2019 |
Francesco La ViaCNR-IMMVerified email at imm.cnr.it
