| SiCILIA—silicon carbide detectors for intense luminosity investigations and applications S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ... Sensors 18 (7), 2289, 2018 | 100 | 2018 |
| High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ... Thin Solid Films 518 (6), S165-S169, 2010 | 80 | 2010 |
| Long-term starspot evolution, activity cycle, and orbital period variation of V711 Tauri (HR 1099) A Lanza, N Piluso, M Rodonò, S Messina, G Cutispoto Astronomy & Astrophysics 455 (2), 595-606, 2006 | 62 | 2006 |
| Matrix role in Ge nanoclusters embedded in Si3N4 or SiO2 S Mirabella, S Cosentino, A Gentile, G Nicotra, N Piluso, LV Mercaldo, ... Applied Physics Letters 101 (1), 2012 | 54 | 2012 |
| 3C-SiC film growth on Si substrates A Severino, C Locke, R Anzalone, M Camarda, N Piluso, A La Magna, ... ECS Transactions 35 (6), 99, 2011 | 54 | 2011 |
| Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ... Beilstein journal of nanotechnology 4 (1), 234-242, 2013 | 53 | 2013 |
| Defect influence on heteroepitaxial 3C-SiC Young’s modulus R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’arrigo Electrochemical and Solid-State Letters 14 (4), H161, 2011 | 44 | 2011 |
| Photocatalytical activity of amorphous hydrogenated TiO2 obtained by pulsed laser ablation in liquid M Zimbone, G Cacciato, MA Buccheri, R Sanz, N Piluso, R Reitano, ... Materials Science in Semiconductor Processing 42, 28-31, 2016 | 33 | 2016 |
| Carbonization and transition layer effects on 3C-SiC film residual stress R Anzalone, G Litrico, N Piluso, R Reitano, A Alberti, P Fiorenza, S Coffa, ... Journal of Crystal Growth 473, 11-19, 2017 | 32 | 2017 |
| Investigation of the Young’s modulus and the residual stress of 4H-SiC circular membranes on 4H-SiC substrates J Ben Messaoud, JF Michaud, D Certon, M Camarda, N Piluso, L Colin, ... Micromachines 10 (12), 801, 2019 | 27 | 2019 |
| Growth rate effect on 3C-SiC film residual stress on (100) Si substrates R Anzalone, C Locke, J Carballo, N Piluso, A Severino, G D'Arrigo, ... Materials Science Forum 645, 143-146, 2010 | 27 | 2010 |
| Raman characterization of doped 3C-SiC/Si for different silicon substrates and C/Si ratios N Piluso, A Severino, M Camarda, R Anzalone, A Canino, G Condorelli, ... Materials Science Forum 645, 255-258, 2010 | 23 | 2010 |
| A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults N Piluso, M Camarda, F La Via Journal of applied physics 116 (16), 2014 | 21 | 2014 |
| Doppler imaging of the young late-type star LO Pegasi (BD +22 4409) in September 2003 N Piluso, A Lanza, I Pagano, A Lanzafame, JF Donati Monthly Notices of the Royal Astronomical Society 387 (1), 237, 2008 | 21* | 2008 |
| Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate F La Via, G D’Arrigo, A Severino, N Piluso, M Mauceri, C Locke, ... Journal of Materials Research 28 (1), 94-103, 2013 | 20 | 2013 |
| Hydrogen etching influence on 4H-SiC homo-epitaxial layer for high power device R Anzalone, N Piluso, M Salanitri, S Lorenti, G Arena, S Coffa Materials Science Forum 897, 71-74, 2017 | 18 | 2017 |
| Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates H von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ... ECS Transactions 64 (6), 631, 2014 | 17 | 2014 |
| Micro-Raman analysis and finite-element modeling of 3C-SiC microstructures N Piluso, R Anzalone, M Camarda, A Severino, A La Magna, G D'Arrigo, ... J. Raman Spectrosc 44, 299-306, 2012 | 17 | 2012 |
| Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates N Piluso, A Severino, M Camarda, A Canino, A La Magna, F La Via Applied Physics Letters 97 (14), 2010 | 17 | 2010 |
| Ion implantation defects in 4H-SiC DIMOSFET E Fontana, N Piluso, A Russo, S Lorenti, CM Marcellino, S Coffa, F La Via Materials Science Forum 858, 418-421, 2016 | 16 | 2016 |
