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WO2021075628A1 - Module conducteur bidirectionnel à zone tampon formée autour de lignes conductrices - Google Patents

Module conducteur bidirectionnel à zone tampon formée autour de lignes conductrices Download PDF

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Publication number
WO2021075628A1
WO2021075628A1 PCT/KR2019/015722 KR2019015722W WO2021075628A1 WO 2021075628 A1 WO2021075628 A1 WO 2021075628A1 KR 2019015722 W KR2019015722 W KR 2019015722W WO 2021075628 A1 WO2021075628 A1 WO 2021075628A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive
conductive pattern
buffer
insulating body
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2019/015722
Other languages
English (en)
Korean (ko)
Inventor
문해중
이은주
정주연
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inno Global Inc
Original Assignee
Inno Global Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inno Global Inc filed Critical Inno Global Inc
Publication of WO2021075628A1 publication Critical patent/WO2021075628A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0483—Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/0735—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Definitions

  • the present invention relates to a bidirectional conductive module in which a buffer region is formed around a conductive line. More specifically, a bidirectional conductive module capable of stable testing even at a small pressure during a repetitive test process, and capable of performing a high-speed test with stable signal transmission. It relates to a conductive module.
  • a device such as a semiconductor device undergoes a manufacturing process and then performs an inspection to determine whether the electrical performance is defective.
  • the test of a semiconductor device is performed in a state in which a test socket (or a contactor or connector, or a bidirectional conductive module) formed so as to be in electrical contact with a terminal of the semiconductor device is inserted between the semiconductor device and the test circuit board.
  • the test socket is used in a burn-in test process during the manufacturing process of a semiconductor device in addition to the final pass/fail inspection of the semiconductor device.
  • the proposed technology to meet the integration of such semiconductor devices is to form a perforated pattern in a vertical direction on a silicon body made of a silicon material made of an elastic material, and then fill the conductive powder inside the perforated pattern to form a conductive pattern.
  • the PCR socket type (or rubber type, hereinafter the same) is widely used.
  • a conventional semiconductor test apparatus 1 includes a support plate 30 and a PCR socket type test socket 10.
  • the support plate 30 supports the test socket 10 when the test socket 10 is positioned between the semiconductor element 3 and the inspection circuit board 5.
  • a main through hole (not shown) for advancing and retreating guide is formed in the center of the support plate 30, and the through hole for coupling is formed to be spaced apart from each other at a position separated from the edge along the edge forming the main through hole.
  • the test socket 10 is fixed to the support plate 30 by a peripheral support portion 50 bonded to the upper and lower surfaces of the support plate 30.
  • a perforated pattern is formed in an insulating silicon body, and conductive patterns are formed in the vertical direction by conductive powder 11 filled in the perforated pattern.
  • the number of terminals of semiconductor devices that is, package balls
  • the number of terminals of semiconductor devices is gradually increasing, and as many as 20,000 pins are manufactured in one package.
  • the reason for this is to put several types of packages in one package and operate them as easily as a single chip.
  • a test socket having 20,000 conductive lines must be manufactured.
  • the semiconductor device needs a force to press the test socket.
  • a semiconductor device In the test socket having a conductive pattern, a semiconductor device must press the test socket with a force of 400,000 g.
  • the test socket manufacturer continues to research to reduce the force of the test socket, but in the case of the conventional test socket that uses silicon as an insulating body, the conductive line is wrapped with silicon, There was a limit to reducing (Force). This means that if the force of the insulating body made of silicon is used as a weak material, the repulsive force or restoring force is weakened, and the insulating body is not restored when pressed, which adversely affects the life of the test socket. Conversely, if the force is increased Since the semiconductor device must press the test socket with a large force, there is a problem that damage to the semiconductor device may occur.
  • test socket capable of reducing a force than a conventional test socket while manufacturing a PCR-type test socket having an insulating body made of silicon and a conductive line composed of conductive powder.
  • the present invention has been conceived to solve the above problems, and provides a bidirectional conductive module capable of performing a stable test even at a small pressure in a repetitive test process, and capable of performing a high-speed test with stable signal transmission. There is a purpose.
  • a filler including an insulating body made of an insulating material and having a plurality of conductive holes penetrating in the vertical direction, and a conductive powder having conductivity is each of the above.
  • It includes a plurality of buffer holes formed to be positioned in the direction; When the four buffer holes are respectively located in diagonal directions of one of the conductive pattern parts, and when the conductive pattern part is pressed in the vertical direction, the insulating body surrounding the conductive pattern part expands into the buffer hole to reduce the force in the vertical direction. It is achieved by a bi-directional conductive module, characterized in that it reduces.
  • a socket frame disposed under the insulating body and having a plurality of through holes penetrating in the vertical direction at positions corresponding to the plurality of conductive pattern portions so that each of the conductive pattern portions is exposed in a downward direction, and each A plurality of ground pins protruding upward from the socket frame at a position corresponding to the buffer hole and inserted into the buffer hole when the socket frame is disposed under the insulating body;
  • the plurality of ground pins may be electrically connected to each other and connected to an external ground line.
  • a diameter of the ground pin may be provided smaller than an inner diameter of the buffer hole, and an empty space may be formed between the ground pin and an inner wall surface of the buffer hole.
  • the insulating body may be made of a silicon material.
  • the buffer hole may be formed outside the edge direction of the conductive pattern portion positioned at the edge of the insulating body, so that one conductive pattern portion may be provided to have a shape positioned at the center of the four buffer holes.
  • a PCR-type bidirectional conductive module capable of implementing a fine pitch
  • four buffer holes are formed around each conductive pattern part, but are located in diagonal directions, and one conductive pattern is provided.
  • a bidirectional conductive module is provided that can reduce the force that prevents the upper device, such as a semiconductor device, from pressing downward when the additional device is pressed in the lower direction by expanding the insulating body into the buffer hole and acting as a buffer. .
  • the ground pin is disposed inside the buffer hole, the ground pins are connected to the external ground line, and the ground structure is formed in a form in which four ground pins are wrapped around one conductive pattern part. Stable signal transmission is possible by minimizing noise and mutual signal interference in the unit, and as a result, a bidirectional conductive module capable of implementing high-speed is also provided.
  • FIG. 1 is a view showing a cross section of a conventional semiconductor test apparatus of the PCR socket type
  • FIG. 2 is a perspective view of a bidirectional conductive module according to a first embodiment of the present invention
  • FIG. 3 is a cutaway view of a partial area of the bidirectional conductive module according to the first embodiment of the present invention
  • FIG. 5 and 6 are views for explaining a modified form when the bidirectional conductive module according to the first embodiment of the present invention is pressed
  • FIG. 7 is a view showing a photograph of an actual prototype of the bidirectional conductive module according to the first embodiment of the present invention.
  • FIG. 8 is a perspective view of a bidirectional conductive module according to a second embodiment of the present invention.
  • FIG. 10 is a diagram for explaining a socket frame and a ground pin of a bidirectional conductive module according to a second embodiment of the present invention.
  • FIG. 11 is a diagram for explaining the effect of signal characteristics of the bidirectional conductive module according to the second embodiment of the present invention.
  • the present invention relates to a bi-directional conductive module, provided with an insulating material and formed with a plurality of conductive holes penetrating in the vertical direction, and a filler including conductive powder having conductivity is filled in each of the conductive holes.
  • a plurality of conductive pattern portions forming a conductive line in the vertical direction, and the insulating body is formed to penetrate in the vertical direction, and the four conductive pattern portions are respectively located in diagonal directions between the four conductive pattern portions adjacent to each other.
  • It includes a plurality of buffer holes formed;
  • the four buffer holes are respectively located in diagonal directions of one of the conductive pattern parts, and when the conductive pattern part is pressed in the vertical direction, the insulating body surrounding the conductive pattern part expands into the buffer hole to reduce the force in the vertical direction. It is characterized by reducing.
  • FIG. 2 is a perspective view of the bidirectional conductive module 100 according to the first embodiment of the present invention
  • FIG. 3 is a cutaway view of a partial region of the bidirectional conductive module 100 according to the first embodiment of the present invention
  • 4 is a cross-sectional view taken along line IV-IV of FIG. 2.
  • the bidirectional conductive module 100 includes an insulating body 110, a plurality of conductive pattern parts 120, and a plurality of buffer holes 130. Includes.
  • the insulating body 110 is made of an elastic material having insulating properties, and in the present invention, it is assumed that it is made of a silicon material. In the insulating body 110, as shown in FIG. 4, a plurality of conductive holes 111 penetrating in the vertical direction are formed.
  • the insulating body 110 in which a plurality of conductive holes 111 is formed is manufactured through a mold.
  • a mold for example, when liquid silicon is injected into a mold in which the first mold pins are formed at positions corresponding to the plurality of conductive holes 111 and then cured, the manufacture of the insulating body 110 having the plurality of conductive holes 111 It becomes possible.
  • the second mold pin is formed at a position corresponding to the buffer hole 130 in the mold, it is possible to manufacture the insulating body 110 in which a plurality of conductive holes 111 and a plurality of buffer holes 130 are formed. It is done.
  • the conductive pattern part 120 is formed in each conductive hole 111 to form a vertical conductive line for testing.
  • the conductive pattern portion 120 is formed by filling and curing each of the conductive holes 111 with a filler including conductive powder having conductivity.
  • the filler is prepared by mixing liquid silicon and conductive powder.
  • Each buffer hole 130 is formed to penetrate the insulating body 110 in the vertical direction.
  • one buffer hole 130 is formed between the four conductive pattern portions 120 adjacent to each other, so that the four conductive pattern portions 120 are positioned in a diagonal direction with respect to one buffer hole 130, respectively. Is formed.
  • This configuration has a shape in which four buffer holes 130 are respectively located in diagonal directions of one conductive pattern part 120 when one conductive pattern part 120 is referenced.
  • the upper device such as a semiconductor element
  • the insulating body 110 surrounding the conductive pattern portion 120 expands into the buffer hole 130 to reduce the force in the vertical direction.
  • 5 and 6 are diagrams for explaining a modified form when the bidirectional conductive module 100 according to the first embodiment of the present invention is pressed.
  • the conductive pattern part 120 when the conductive pattern part 120 is pressed downward by the upper device, the intermediate region of the conductive pattern part 120 expands outward in the radial direction. While the force to block the pressure in the downward direction by the insulating body 110 surrounding the conductive pattern part 120 is large, in the bidirectional conductive module 100 according to the present invention, one conductive pattern part (120) Since the insulating body 110 can be expanded into an empty space inside the four buffer holes 130 located in diagonal directions around the 120, the force to block the pressure in the lower direction can be significantly reduced.
  • the buffer hole 130 is not formed outside the edge direction of the conductive pattern portion 120 positioned at the edge of the insulating body 110, but the conductive pattern A buffer hole 130 may also be formed outside the edge direction of the part 120. That is, it goes without saying that the conductive pattern portion 120 positioned at the edge of the insulating body 110 may also be provided in a shape positioned at the center of the four buffer holes 130. 7 is a view showing a photograph of a prototype actually manufactured in this form, and it can be seen that the conductive pattern portion 120 at the edge is formed in the center of the four buffer holes 130.
  • FIGS. 8 to 10 is a perspective view of a bidirectional conductive module 100a according to a second embodiment of the present invention
  • FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 8
  • the bidirectional conductive module 100a includes an insulating body 110a, a plurality of conductive pattern parts 120a, a plurality of buffer holes 130a, It includes a socket frame 150a and a plurality of ground pins 140a.
  • the insulating body 110a, the plurality of conductive pattern portions 120a, and the plurality of buffer holes 130a according to the second embodiment of the present invention correspond to the configuration according to the first embodiment described above. Description is omitted.
  • the socket frame 150a is disposed under the insulating body 110a.
  • a plurality of conductive pattern parts 120a are penetrated in the vertical direction at positions corresponding to the plurality of conductive pattern parts 120a so that each conductive pattern part 120a is exposed downward.
  • the through hole (151a) of is formed.
  • each conductive pattern portion 120a protrudes downward through the through hole 151a to be exposed.
  • the socket frame 150a may be disposed on the insulating body 110a before the conductive pattern part 120a is formed, and the conductive pattern part 120a may be formed after the socket frame 150a is disposed.
  • each of the ground pins 140a protrudes upward from the upper surface of the socket frame 150a.
  • the ground pin 140a protrudes upward from the socket frame 150a at a position corresponding to the buffer hole 130a formed in the insulating body 110a, through which the socket frame 150a is lower than the insulating body 110a.
  • the ground pin (140a) inside each buffer hole (130a) It will have a form in which it is arranged.
  • the plurality of ground pins 140a are electrically connected to each other and are connected to an external ground line.
  • the ground pad 141a for connection with the external ground line is exposed to the outside.
  • the configuration for connection with the external ground line may be provided in various forms.
  • ground pins 140a are disposed around one conductive pattern part 120a to form a ground structure surrounding the conductive pattern part 120a, so that the conductive pattern part 120a Stable signal transmission is possible by minimizing noise and mutual signal interference in the system, and as a result, high-speed implementation is also possible.
  • FIG. 11 is a diagram for explaining the effect of signal characteristics of the bidirectional conductive module according to the second embodiment of the present invention.
  • FIG. 11(a) is a diagram showing an example in which ground lines are formed in a row on both sides of one conductive pattern part
  • FIG. 11(b) is a single conductive material, as in the second embodiment of the present invention. It is a diagram showing a case where four ground pins 140a are formed in diagonal directions to surround the pattern part 120a
  • FIG. 11(c) is a test of the signal characteristics of the above two cases (A and B, respectively). It is a figure showing the result.
  • the bandwidth of the experimental result shown in (c) of FIG. 11 is the maximum allowable bandwidth and ranges from -1 dB to 12.27 GHz in the case of the pattern shown in (a) of FIG. 11, that is, when the ground-signal-ground is connected in series. On the other hand, it was confirmed that 32.72 GHz was shown in the second embodiment of the present invention.
  • the diameter of the ground pin 140a is provided smaller than the inner diameter of the buffer hole 130a. Accordingly, an empty space is formed between the ground pin 140a and the inner wall surface of the buffer hole 130a, so that the insulating body 110a expands into the buffer hole 130a as shown in FIGS. 5 and 6 It becomes possible to form a space that can be.
  • socket frame 151a through hole
  • the present invention is applied to the field of electrically connecting an inspection circuit board and a semiconductor element in inspecting for defects in electrical performance during the manufacturing process of a device such as a semiconductor element.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Connecting Device With Holders (AREA)

Abstract

La présente invention concerne un module conducteur bidirectionnel comprenant : un corps isolant formé d'un matériau isolant et présentant une pluralité de trous conducteurs pénétrant dans la direction verticale ; une pluralité de parties de motif conducteur qui ont des lignes conductrices formées dans la direction verticale en remplissant chacun des trous conducteurs avec une matière de remplissage comprenant une poudre conductrice possédant une conductivité ; et une pluralité de trous tampons formés à travers le corps isolant dans la direction verticale, et formés entre quatre parties de motif conducteur adjacentes les unes aux autres de telle sorte que les quatre parties de motif conducteur sont respectivement situées dans des directions diagonales, quatre trous tampons étant situés respectivement dans des directions diagonales d'une partie de motif conducteur de telle sorte que, quand la partie de motif conducteur est pressée dans la direction verticale, le corps isolant entourant la partie de motif conducteur se dilate vers l'intérieur des trous tampons afin de réduire une force dans la direction verticale. Par conséquent, tout en fournissant un module conducteur bidirectionnel de type PCR apte à mettre en œuvre un micropas, comme quatre trous tampons sont formés autour de chaque partie de motif conducteur et sont situés dans des directions diagonales, quand une partie de motif conducteur est pressée vers le bas, le corps isolant se dilate vers l'intérieur des trous tampons afin de fournir une fonction d'effet tampon, de telle sorte que, quand un dispositif supérieur, tel qu'un dispositif à semi-conducteur, applique une pression vers le bas, il est possible de réduire une force qui l'interrompt.
PCT/KR2019/015722 2019-10-15 2019-11-18 Module conducteur bidirectionnel à zone tampon formée autour de lignes conductrices Ceased WO2021075628A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190127728A KR102244246B1 (ko) 2019-10-15 2019-10-15 도전 라인 주변에 완충 영역이 형성된 테스트 소켓
KR10-2019-0127728 2019-10-15

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WO2021075628A1 true WO2021075628A1 (fr) 2021-04-22

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Families Citing this family (7)

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KR102730620B1 (ko) * 2022-07-27 2024-11-15 주식회사 아이에스시 검사용 커넥터
KR102838314B1 (ko) * 2022-10-25 2025-07-24 국립부경대학교 산학협력단 실리콘 러버 소켓용 절연성 복합재료의 제조방법 및 상기 절연성 복합재료를 포함하는 실리콘 러버 소켓의 제조방법
KR102740620B1 (ko) 2022-10-31 2024-12-10 주식회사 엠에스엘 소켓 제조 방법 및 소켓
KR102812346B1 (ko) 2023-09-27 2025-05-27 주식회사 엠에스엘 소켓 및 소켓 제조 방법
KR102868095B1 (ko) 2023-09-27 2025-10-13 주식회사 엠에스엘 소켓 및 소켓 제조 방법
KR102824139B1 (ko) 2023-11-10 2025-06-24 주식회사 엠에스엘 소켓 및 소켓 제조 방법
KR102788419B1 (ko) 2023-12-08 2025-03-31 주식회사 엠에스엘 소켓 제조 방법 및 소켓

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Publication number Priority date Publication date Assignee Title
US20060284634A1 (en) * 2005-06-20 2006-12-21 Hsin-Kuan Wu Testing assembly for electrical test of electronic package and testing socket thereof
KR20170058677A (ko) * 2015-11-19 2017-05-29 (주)티에스이 검사용 소켓
KR101833009B1 (ko) * 2016-03-18 2018-02-27 주식회사 오킨스전자 도전성 파티클이 자화된 도전 와이어에 의하여 자성 배열되는 테스트 소켓 및 그 제조 방법
KR102007268B1 (ko) * 2017-11-08 2019-08-07 주식회사 이노글로벌 양방향 도전성 모듈
KR20190086598A (ko) * 2017-12-29 2019-07-23 엔트리움 주식회사 엘라스토머 소켓

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KR20210044935A (ko) 2021-04-26
KR102244246B1 (ko) 2021-04-27

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