WO2021075628A1 - Bidirectional conductive module with buffer area formed around conductive lines - Google Patents

Abstract

The present invention relates to a bidirectional conductive module, comprising: an insulating body formed of an insulating material and having a plurality of conductive holes penetrated in the vertical direction; a plurality of conductive pattern portions which have conductive lines formed in the vertical direction by filling each of the conductive holes with a filler including conductive powder having conductivity; and a plurality of buffer holes formed through the insulating body in the vertical direction, and formed between four conductive pattern portions adjacent to each other such that the four conductive pattern portions are respectively located in diagonal directions, wherein four buffer holes are respectively located in diagonal directions of one conductive pattern portion such that when the conductive pattern portion is pressed in the vertical direction, the insulating body surrounding the conductive pattern portion expands to the inside of the buffer holes so as to reduce a force in the vertical direction. Accordingly, while providing a PCR type bidirectional conductive module capable of implementing a micro-pitch, as four buffer holes are formed around each conductive pattern portion and are located in diagonal directions, when one conductive pattern portion is pressed downwards, the insulating body expands to the inside of the buffer holes so as to provide a buffering function, such that when an upper device such as a semiconductor device presses downwards, it is possible to reduce a force that interrupts same.

Description

Bi-directional conductive module with buffer area formed around conductive line

The present invention relates to a bidirectional conductive module in which a buffer region is formed around a conductive line. More specifically, a bidirectional conductive module capable of stable testing even at a small pressure during a repetitive test process, and capable of performing a high-speed test with stable signal transmission. It relates to a conductive module.

A device such as a semiconductor device (hereinafter referred to as a'semiconductor device') undergoes a manufacturing process and then performs an inspection to determine whether the electrical performance is defective. The test of a semiconductor device is performed in a state in which a test socket (or a contactor or connector, or a bidirectional conductive module) formed so as to be in electrical contact with a terminal of the semiconductor device is inserted between the semiconductor device and the test circuit board. In addition, the test socket is used in a burn-in test process during the manufacturing process of a semiconductor device in addition to the final pass/fail inspection of the semiconductor device.

According to the development and miniaturization of semiconductor device integration technology, the size and pitch of terminals of semiconductor devices, that is, leads, are also becoming smaller, and accordingly, there is a need for a method of forming minute gaps between conductive patterns of test sockets. Therefore, there is a limitation in manufacturing a test socket for testing integrated semiconductor devices with the conventional Pogo-pin type test socket.

The proposed technology to meet the integration of such semiconductor devices is to form a perforated pattern in a vertical direction on a silicon body made of a silicon material made of an elastic material, and then fill the conductive powder inside the perforated pattern to form a conductive pattern. The PCR socket type (or rubber type, hereinafter the same) is widely used.

1 is a diagram showing a cross section of a conventional semiconductor test apparatus 1 of a PCR socket type. Referring to FIG. 1, a conventional semiconductor test apparatus 1 includes a support plate 30 and a PCR socket type test socket 10.

The support plate 30 supports the test socket 10 when the test socket 10 is positioned between the semiconductor element 3 and the inspection circuit board 5. Here, a main through hole (not shown) for advancing and retreating guide is formed in the center of the support plate 30, and the through hole for coupling is formed to be spaced apart from each other at a position separated from the edge along the edge forming the main through hole. . In addition, the test socket 10 is fixed to the support plate 30 by a peripheral support portion 50 bonded to the upper and lower surfaces of the support plate 30.

In the PCR socket type test socket 10, a perforated pattern is formed in an insulating silicon body, and conductive patterns are formed in the vertical direction by conductive powder 11 filled in the perforated pattern.

Meanwhile, the number of terminals of semiconductor devices, that is, package balls, is gradually increasing, and as many as 20,000 pins are manufactured in one package. The reason for this is to put several types of packages in one package and operate them as easily as a single chip. In order to test such a package, a test socket having 20,000 conductive lines must be manufactured.

However, in the process of testing a semiconductor device using a test socket having 20,000 conductive lines, the semiconductor device needs a force to press the test socket. In the test socket having a conductive pattern, a semiconductor device must press the test socket with a force of 400,000 g.

Due to the above circumstances, the test socket manufacturer continues to research to reduce the force of the test socket, but in the case of the conventional test socket that uses silicon as an insulating body, the conductive line is wrapped with silicon, There was a limit to reducing (Force). This means that if the force of the insulating body made of silicon is used as a weak material, the repulsive force or restoring force is weakened, and the insulating body is not restored when pressed, which adversely affects the life of the test socket. Conversely, if the force is increased Since the semiconductor device must press the test socket with a large force, there is a problem that damage to the semiconductor device may occur.

Accordingly, there is a demand for a test socket capable of reducing a force than a conventional test socket while manufacturing a PCR-type test socket having an insulating body made of silicon and a conductive line composed of conductive powder.

Accordingly, the present invention has been conceived to solve the above problems, and provides a bidirectional conductive module capable of performing a stable test even at a small pressure in a repetitive test process, and capable of performing a high-speed test with stable signal transmission. There is a purpose.

According to the present invention, in a bidirectional conductive module, a filler including an insulating body made of an insulating material and having a plurality of conductive holes penetrating in the vertical direction, and a conductive powder having conductivity is each of the above. A plurality of conductive pattern portions filled in the conductive hole to form a conductive line in the vertical direction, and the insulating body is formed to penetrate in the vertical direction, and the four conductive pattern portions are diagonally formed between the four conductive pattern portions adjacent to each other. It includes a plurality of buffer holes formed to be positioned in the direction; When the four buffer holes are respectively located in diagonal directions of one of the conductive pattern parts, and when the conductive pattern part is pressed in the vertical direction, the insulating body surrounding the conductive pattern part expands into the buffer hole to reduce the force in the vertical direction. It is achieved by a bi-directional conductive module, characterized in that it reduces.

Here, a socket frame disposed under the insulating body and having a plurality of through holes penetrating in the vertical direction at positions corresponding to the plurality of conductive pattern portions so that each of the conductive pattern portions is exposed in a downward direction, and each A plurality of ground pins protruding upward from the socket frame at a position corresponding to the buffer hole and inserted into the buffer hole when the socket frame is disposed under the insulating body; The plurality of ground pins may be electrically connected to each other and connected to an external ground line.

In addition, a diameter of the ground pin may be provided smaller than an inner diameter of the buffer hole, and an empty space may be formed between the ground pin and an inner wall surface of the buffer hole.

In addition, the insulating body may be made of a silicon material.

In addition, the buffer hole may be formed outside the edge direction of the conductive pattern portion positioned at the edge of the insulating body, so that one conductive pattern portion may be provided to have a shape positioned at the center of the four buffer holes.

According to the configuration as described above, according to the present invention, while providing a PCR-type bidirectional conductive module capable of implementing a fine pitch, four buffer holes are formed around each conductive pattern part, but are located in diagonal directions, and one conductive pattern is provided. A bidirectional conductive module is provided that can reduce the force that prevents the upper device, such as a semiconductor device, from pressing downward when the additional device is pressed in the lower direction by expanding the insulating body into the buffer hole and acting as a buffer. .

In addition, according to the present invention, the ground pin is disposed inside the buffer hole, the ground pins are connected to the external ground line, and the ground structure is formed in a form in which four ground pins are wrapped around one conductive pattern part. Stable signal transmission is possible by minimizing noise and mutual signal interference in the unit, and as a result, a bidirectional conductive module capable of implementing high-speed is also provided.

1 is a view showing a cross section of a conventional semiconductor test apparatus of the PCR socket type,

2 is a perspective view of a bidirectional conductive module according to a first embodiment of the present invention,

3 is a cutaway view of a partial area of the bidirectional conductive module according to the first embodiment of the present invention,

4 is a cross-sectional view taken along line IV-IV of FIG. 2,

5 and 6 are views for explaining a modified form when the bidirectional conductive module according to the first embodiment of the present invention is pressed,

7 is a view showing a photograph of an actual prototype of the bidirectional conductive module according to the first embodiment of the present invention,

8 is a perspective view of a bidirectional conductive module according to a second embodiment of the present invention,

9 is a cross-sectional view taken along line IX-IX of FIG. 8,

10 is a diagram for explaining a socket frame and a ground pin of a bidirectional conductive module according to a second embodiment of the present invention,

11 is a diagram for explaining the effect of signal characteristics of the bidirectional conductive module according to the second embodiment of the present invention.

The present invention relates to a bi-directional conductive module, provided with an insulating material and formed with a plurality of conductive holes penetrating in the vertical direction, and a filler including conductive powder having conductivity is filled in each of the conductive holes. A plurality of conductive pattern portions forming a conductive line in the vertical direction, and the insulating body is formed to penetrate in the vertical direction, and the four conductive pattern portions are respectively located in diagonal directions between the four conductive pattern portions adjacent to each other. It includes a plurality of buffer holes formed; When the four buffer holes are respectively located in diagonal directions of one of the conductive pattern parts, and when the conductive pattern part is pressed in the vertical direction, the insulating body surrounding the conductive pattern part expands into the buffer hole to reduce the force in the vertical direction. It is characterized by reducing.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a perspective view of the bidirectional conductive module 100 according to the first embodiment of the present invention, and FIG. 3 is a cutaway view of a partial region of the bidirectional conductive module 100 according to the first embodiment of the present invention. 4 is a cross-sectional view taken along line IV-IV of FIG. 2.

2 to 4, the bidirectional conductive module 100 according to the first embodiment of the present invention includes an insulating body 110, a plurality of conductive pattern parts 120, and a plurality of buffer holes 130. Includes.

The insulating body 110 is made of an elastic material having insulating properties, and in the present invention, it is assumed that it is made of a silicon material. In the insulating body 110, as shown in FIG. 4, a plurality of conductive holes 111 penetrating in the vertical direction are formed.

In the present invention, as an example, the insulating body 110 in which a plurality of conductive holes 111 is formed is manufactured through a mold. For example, when liquid silicon is injected into a mold in which the first mold pins are formed at positions corresponding to the plurality of conductive holes 111 and then cured, the manufacture of the insulating body 110 having the plurality of conductive holes 111 It becomes possible. At this time, if the second mold pin is formed at a position corresponding to the buffer hole 130 in the mold, it is possible to manufacture the insulating body 110 in which a plurality of conductive holes 111 and a plurality of buffer holes 130 are formed. It is done.

The conductive pattern part 120 is formed in each conductive hole 111 to form a vertical conductive line for testing. In the present invention, it is assumed that the conductive pattern portion 120 is formed by filling and curing each of the conductive holes 111 with a filler including conductive powder having conductivity. Here, as an example, the filler is prepared by mixing liquid silicon and conductive powder.

Each buffer hole 130 is formed to penetrate the insulating body 110 in the vertical direction. Here, one buffer hole 130 is formed between the four conductive pattern portions 120 adjacent to each other, so that the four conductive pattern portions 120 are positioned in a diagonal direction with respect to one buffer hole 130, respectively. Is formed. This configuration has a shape in which four buffer holes 130 are respectively located in diagonal directions of one conductive pattern part 120 when one conductive pattern part 120 is referenced.

According to the above configuration, when the conductive pattern part 120 is pressed in the vertical direction, for example, the upper device, such as a semiconductor element, descends from the upper direction and is in contact with the conductive pattern part 120 in the lower direction. When pressed, the insulating body 110 surrounding the conductive pattern portion 120 expands into the buffer hole 130 to reduce the force in the vertical direction.

5 and 6 are diagrams for explaining a modified form when the bidirectional conductive module 100 according to the first embodiment of the present invention is pressed. 5 and 6, when the conductive pattern part 120 is pressed downward by the upper device, the intermediate region of the conductive pattern part 120 expands outward in the radial direction. While the force to block the pressure in the downward direction by the insulating body 110 surrounding the conductive pattern part 120 is large, in the bidirectional conductive module 100 according to the present invention, one conductive pattern part (120) Since the insulating body 110 can be expanded into an empty space inside the four buffer holes 130 located in diagonal directions around the 120, the force to block the pressure in the lower direction can be significantly reduced.

Accordingly, even if the bidirectional conductive module 100 is pressed with only a small force, stable contact between each ball of the semiconductor device and the conductive pattern portion 120 is possible.

On the other hand, in the embodiment shown in FIGS. 2 to 6, it is shown that the buffer hole 130 is not formed outside the edge direction of the conductive pattern portion 120 positioned at the edge of the insulating body 110, but the conductive pattern A buffer hole 130 may also be formed outside the edge direction of the part 120. That is, it goes without saying that the conductive pattern portion 120 positioned at the edge of the insulating body 110 may also be provided in a shape positioned at the center of the four buffer holes 130. 7 is a view showing a photograph of a prototype actually manufactured in this form, and it can be seen that the conductive pattern portion 120 at the edge is formed in the center of the four buffer holes 130.

Hereinafter, the bidirectional conductive module 100a according to the second embodiment of the present invention will be described in detail with reference to FIGS. 8 to 10. 8 is a perspective view of a bidirectional conductive module 100a according to a second embodiment of the present invention, FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 8, and FIG. A diagram for explaining the socket frame 150a and the ground pin 140a of the conductive module 100a.

8 to 10, the bidirectional conductive module 100a according to the second embodiment of the present invention includes an insulating body 110a, a plurality of conductive pattern parts 120a, a plurality of buffer holes 130a, It includes a socket frame 150a and a plurality of ground pins 140a.

Here, the insulating body 110a, the plurality of conductive pattern portions 120a, and the plurality of buffer holes 130a according to the second embodiment of the present invention correspond to the configuration according to the first embodiment described above. Description is omitted.

The socket frame 150a is disposed under the insulating body 110a. Here, in the socket frame 150a, as shown in FIG. 10, a plurality of conductive pattern parts 120a are penetrated in the vertical direction at positions corresponding to the plurality of conductive pattern parts 120a so that each conductive pattern part 120a is exposed downward. The through hole (151a) of is formed.

Accordingly, when the socket frame 150a is disposed under the insulating body 110a, each conductive pattern portion 120a protrudes downward through the through hole 151a to be exposed. Here, it goes without saying that the socket frame 150a may be disposed on the insulating body 110a before the conductive pattern part 120a is formed, and the conductive pattern part 120a may be formed after the socket frame 150a is disposed.

Each of the ground pins 140a protrudes upward from the upper surface of the socket frame 150a. Here, the ground pin 140a protrudes upward from the socket frame 150a at a position corresponding to the buffer hole 130a formed in the insulating body 110a, through which the socket frame 150a is lower than the insulating body 110a. When disposed in each of the ground pins (140a) is inserted into the buffer hole (130a) at a corresponding position, as shown in Figs. 8 and 9, the ground pin (140a) inside each buffer hole (130a) It will have a form in which it is arranged.

Here, as shown in FIG. 10, the plurality of ground pins 140a are electrically connected to each other and are connected to an external ground line. In FIG. 10, the ground pad 141a for connection with the external ground line is exposed to the outside. However, it goes without saying that the configuration for connection with the external ground line may be provided in various forms.

According to the above configuration, four ground pins 140a are disposed around one conductive pattern part 120a to form a ground structure surrounding the conductive pattern part 120a, so that the conductive pattern part 120a Stable signal transmission is possible by minimizing noise and mutual signal interference in the system, and as a result, high-speed implementation is also possible.

11 is a diagram for explaining the effect of signal characteristics of the bidirectional conductive module according to the second embodiment of the present invention. FIG. 11(a) is a diagram showing an example in which ground lines are formed in a row on both sides of one conductive pattern part, and FIG. 11(b) is a single conductive material, as in the second embodiment of the present invention. It is a diagram showing a case where four ground pins 140a are formed in diagonal directions to surround the pattern part 120a, and FIG. 11(c) is a test of the signal characteristics of the above two cases (A and B, respectively). It is a figure showing the result.

The bandwidth of the experimental result shown in (c) of FIG. 11 is the maximum allowable bandwidth and ranges from -1 dB to 12.27 GHz in the case of the pattern shown in (a) of FIG. 11, that is, when the ground-signal-ground is connected in series. On the other hand, it was confirmed that 32.72 GHz was shown in the second embodiment of the present invention.

Meanwhile, in the second embodiment of the present invention, it is assumed that the diameter of the ground pin 140a is provided smaller than the inner diameter of the buffer hole 130a. Accordingly, an empty space is formed between the ground pin 140a and the inner wall surface of the buffer hole 130a, so that the insulating body 110a expands into the buffer hole 130a as shown in FIGS. 5 and 6 It becomes possible to form a space that can be.

Although some embodiments of the present invention have been illustrated and described, those skilled in the art of ordinary skill in the art to which the present invention pertains will appreciate that the present embodiments can be modified without departing from the principles or spirit of the present invention. . The scope of the invention will be determined by the appended claims and their equivalents.

[Explanation of code]

100, 100a: bidirectional conductive module

110, 110a: insulating body 111: conductive hole

120, 120a: conductive pattern portion 130, 130a: buffer hole

140a: ground pin 141a: ground pad

150a: socket frame 151a: through hole

The present invention is applied to the field of electrically connecting an inspection circuit board and a semiconductor element in inspecting for defects in electrical performance during the manufacturing process of a device such as a semiconductor element.

Claims (5)

In the bidirectional conductive module in which a buffer region is formed around a conductive line, An insulating body made of an insulating material and having a plurality of conductive holes penetrating in the vertical direction; A plurality of conductive pattern portions for forming a conductive line in the vertical direction by filling each of the conductive holes with a filler including conductive powder having conductivity, A plurality of buffer holes formed through the insulating body in an up-down direction, wherein the four conductive pattern portions are formed in diagonal directions between the four conductive pattern portions adjacent to each other; When the four buffer holes are respectively located in diagonal directions of the one conductive pattern part and the conductive pattern part is pressed in the vertical direction, the insulating body surrounding the conductive pattern part expands into the buffer hole to reduce the force in the vertical direction. A bidirectional conductive module in which a buffer region is formed around a conductive line, characterized in that to reduce. The method of claim 1, A socket frame disposed under the insulating body and having a plurality of through holes penetrating in the vertical direction at positions corresponding to the plurality of conductive pattern portions so that each of the conductive pattern portions is exposed in a downward direction; A plurality of ground pins protruding upward from the socket frame at positions corresponding to each of the buffer holes and inserted into the buffer holes when the socket frame is disposed under the insulating body; The plurality of ground pins are electrically connected to each other and are connected to an external ground line, wherein a buffer region is formed around a conductive line. The method of claim 2, The ground pin has a diameter smaller than the inner diameter of the buffer hole, and an empty space is formed between the ground pin and the inner wall surface of the buffer hole. The method of claim 1, The insulating body is a bi-directional conductive module in which a buffer region is formed around a conductive line, wherein the insulating body is made of a silicon material. The method of claim 1, Around the conductive line, characterized in that the buffer hole is formed outside the edge direction of the conductive pattern portion positioned at the edge of the insulating body, and one conductive pattern portion is provided to have a shape positioned at the center of the four buffer holes. Bi-directional conductive module in which a buffer area is formed in the.

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