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WO2018103165A1 - Liant inorganique à bas point de fusion approprié pour un substrat en aluminium et procédé de préparation associé - Google Patents

Liant inorganique à bas point de fusion approprié pour un substrat en aluminium et procédé de préparation associé Download PDF

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Publication number
WO2018103165A1
WO2018103165A1 PCT/CN2016/113349 CN2016113349W WO2018103165A1 WO 2018103165 A1 WO2018103165 A1 WO 2018103165A1 CN 2016113349 W CN2016113349 W CN 2016113349W WO 2018103165 A1 WO2018103165 A1 WO 2018103165A1
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WO
WIPO (PCT)
Prior art keywords
inorganic binder
low
melting
aluminum substrate
purity
Prior art date
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Ceased
Application number
PCT/CN2016/113349
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English (en)
Chinese (zh)
Inventor
刘建
苏冠贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Corehelm Electronic Materials Co Ltd
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Dongguan Corehelm Electronic Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Corehelm Electronic Materials Co Ltd filed Critical Dongguan Corehelm Electronic Materials Co Ltd
Publication of WO2018103165A1 publication Critical patent/WO2018103165A1/fr
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C12/00—Powdered glass; Bead compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders

Definitions

  • the invention relates to the technical field of electronic materials, in particular to a low melting point inorganic binder suitable for an aluminum substrate and a preparation method thereof.
  • the inorganic binder has a low glass transition temperature and a low melting temperature, and can be applied to sealing and bonding of components such as electronic devices and semiconductors, and can also be used in electronic pastes, dielectric materials, and the like.
  • Lead-containing low-melting glass is likely to cause environmental pollution and cause harm to the workers' workers. Although many low-melting glass overcome the above shortcomings, high temperatures are required to soften at low temperature softening and low temperature work, and only in this way Achieve welding.
  • the low-melting glass powder currently produced on the market mainly has the following defects, specifically: 1. The softening temperature is high; 3. The expansion coefficient is too large; 3. The dielectric properties are not good.
  • the object of the present invention is to provide a low-melting inorganic binder suitable for an aluminum substrate, which has a low softening point and a moderate melting temperature, and is suitable for an aluminum substrate. It has excellent dielectric properties and physical and chemical properties, that is, it can effectively meet the requirements of aluminum substrate insulation medium and electronic paste inorganic binder.
  • Another object of the present invention is to provide a process for producing a low-melting inorganic binder suitable for use in an aluminum substrate, which is capable of efficiently producing the above-mentioned low-melting inorganic binder.
  • a low-melting inorganic binder suitable for an aluminum substrate comprising the following parts by weight, specifically:
  • the inorganic binder is a mixed inorganic binder composed of an amorphous inorganic binder, a microcrystalline inorganic binder or an amorphous inorganic binder and a microcrystalline inorganic binder.
  • the SiO 2 has a particle size value of from 1 ⁇ m to 20 ⁇ m and a purity of from 99.5% to 99.9%.
  • the Bi 2 O 3 has a particle size value of 5 ⁇ m -50 ⁇ m and a purity of >99.9%.
  • the CaF 2 has a particle size value of 2 ⁇ m to 30 ⁇ m and a purity of >99.9%.
  • the SnO 2 has a particle size value of 10 ⁇ m -50 ⁇ m and a purity of >99.9%.
  • the Al 2 O 3 has a particle size value of from 1 ⁇ m to 20 ⁇ m and a purity of from 99.5 to 99.9%.
  • the B 2 O 3 has a particle size value of 5 ⁇ m -50 ⁇ m and a purity of >99.5%.
  • the ZnO has a particle size value of 2 ⁇ m -30 ⁇ m and a purity of >99.5%.
  • the TiO 2 has a particle size value of 1 ⁇ m -20 ⁇ m and a purity of >99.5%.
  • a preparation method of a low-melting inorganic binder suitable for an aluminum substrate comprises the following process steps, specifically:
  • the molten mixture is subjected to water quenching treatment to obtain glass slag;
  • the dried glass slag is placed in a ball mill for crushing and ball milling, and then sieved to obtain a low-melting glass powder, and the low-melting inorganic binder is prepared.
  • the low-melting inorganic binder suitable for the aluminum substrate of the invention comprises the following parts by weight, specifically: SiO 2 1%-20%, Bi 2 O 3 30%-50%, B 2 O 3 5%-40%, CaF 2 5%-15%, SnO 2 0.1%-2%, Al 2 O 3 0.2%-15%, ZnO 0.1%-5% TiO 2 0.1%-2%.
  • the low-melting inorganic binder suitable for the aluminum substrate of the invention has low softening point, moderate melting temperature, excellent dielectric properties and physical and chemical properties, and can effectively satisfy the aluminum substrate insulating medium. , electronic paste inorganic binder requirements.
  • Another advantageous effect of the present invention is a preparation method of a low-melting inorganic binder suitable for an aluminum substrate according to the present invention, which comprises the following process steps: a, accurately weighing SiO 2 , Bi 2 O 3 , B 2 O 3 , CaF 2 , SnO 2 , Al 2 O 3 , ZnO, TiO 2 , and then we will weigh SiO 2 , Bi 2 O 3 , B 2 O 3 , CaF 2 , SnO 2 , Al 2 O 3 , ZnO , TiO 2 are placed in a mixer for mixing and mixing; b, composed of SiO 2 , Bi 2 O 3 , B 2 O 3 , CaF 2 , SnO 2 , Al 2 O 3 , ZnO, TiO 2 After the mixture is thoroughly mixed, the mixture is poured into a platinum crucible, and slowly heated to 400 ° C at a heating rate of 1-5 ° C / min and held for 60 min, and then further heated at a temperature increase rate of
  • the preparation method can efficiently produce the above-mentioned low-melting inorganic binder.
  • Embodiment 1 A low-melting inorganic binder suitable for an aluminum substrate, comprising the following parts by weight, specifically:
  • the inorganic binder is a mixed inorganic binder composed of an amorphous inorganic binder, a microcrystalline inorganic binder or an amorphous inorganic binder and a microcrystalline inorganic binder.
  • the particle size of SiO 2 is 1 ⁇ m -20 ⁇ m, the purity is 99.5%-99.9%; the particle size of Bi 2 O 3 is 5 ⁇ m -50 ⁇ m, the purity is >99.9%; the particle size of CaF 2 is 2 ⁇ m -30 ⁇ m, purity.
  • SnO 2 has a particle size value of 10 ⁇ m -50 ⁇ m, purity >99.9%
  • Al 2 O 3 has a particle size value of 1 ⁇ m -20 ⁇ m, purity 99.5-99.9%
  • B 2 O 3 particle size value is 5 ⁇ m -50 ⁇ m, purity >99.5-%
  • ZnO has a particle size value of 2 ⁇ m -30 ⁇ m and a purity of >99.5%
  • TiO 2 has a particle size value of 1 ⁇ m -20 ⁇ m and a purity of >99.5%.
  • the low-melting inorganic binder suitable for the aluminum substrate of the first embodiment has a low softening point, a moderate melting temperature, and excellent dielectric properties and physical and chemical properties, which can effectively satisfy the aluminum substrate. Insulation medium, electronic paste inorganic binder requirements.
  • the low-melting inorganic binder of the first embodiment can be prepared by the following preparation method, in particular, a method for preparing a low-melting inorganic binder suitable for an aluminum substrate, which comprises the following processes step:
  • the molten mixture is subjected to water quenching treatment to obtain glass slag;
  • the dried glass slag is placed in a ball mill for crushing and ball milling, and then sieved to obtain a low-melting glass powder, and the low-melting inorganic binder is prepared.
  • Embodiment 2 a low-melting inorganic binder suitable for an aluminum substrate, comprising the following parts by weight, specifically:
  • the inorganic binder is a mixed inorganic binder composed of an amorphous inorganic binder, a microcrystalline inorganic binder or an amorphous inorganic binder and a microcrystalline inorganic binder.
  • the particle size of SiO 2 is 1 ⁇ m -20 ⁇ m, the purity is 99.5%-99.9%; the particle size of Bi 2 O 3 is 5 ⁇ m -50 ⁇ m, the purity is >99.9%; the particle size of CaF 2 is 2 ⁇ m -30 ⁇ m, purity.
  • SnO 2 has a particle size value of 10 ⁇ m -50 ⁇ m, purity >99.9%
  • Al 2 O 3 has a particle size value of 1 ⁇ m -20 ⁇ m, purity 99.5-99.9%
  • B 2 O 3 particle size value is 5 ⁇ m -50 ⁇ m, purity >99.5-%
  • ZnO has a particle size value of 2 ⁇ m -30 ⁇ m and a purity of >99.5%
  • TiO 2 has a particle size value of 1 ⁇ m -20 ⁇ m and a purity of >99.5%.
  • the low-melting inorganic binder suitable for the aluminum substrate of the second embodiment has a low softening point, a moderate melting temperature, and excellent dielectric properties and physical and chemical properties, which can effectively satisfy the aluminum substrate. Insulation medium, electronic paste inorganic binder requirements.
  • the low-melting inorganic binder of the second embodiment can be prepared by the following preparation method, in particular, a method for preparing a low-melting inorganic binder suitable for an aluminum substrate, which comprises the following processes step:
  • the molten mixture is subjected to water quenching treatment to obtain glass slag;
  • the dried glass slag is placed in a ball mill for crushing and ball milling, and then sieved to obtain a low-melting glass powder, and the low-melting inorganic binder is prepared.
  • Embodiment 3 is a low-melting inorganic binder suitable for an aluminum substrate, comprising the following parts by weight, specifically:
  • the inorganic binder is a mixed inorganic binder composed of an amorphous inorganic binder, a microcrystalline inorganic binder or an amorphous inorganic binder and a microcrystalline inorganic binder.
  • the particle size of SiO 2 is 1 ⁇ m -20 ⁇ m, the purity is 99.5%-99.9%; the particle size of Bi 2 O 3 is 5 ⁇ m -50 ⁇ m, the purity is >99.9%; the particle size of CaF 2 is 2 ⁇ m -30 ⁇ m, purity.
  • SnO 2 has a particle size value of 10 ⁇ m -50 ⁇ m, purity >99.9%
  • Al 2 O 3 has a particle size value of 1 ⁇ m -20 ⁇ m, purity 99.5-99.9%
  • B 2 O 3 particle size value is 5 ⁇ m -50 ⁇ m, purity >99.5-%
  • ZnO has a particle size value of 2 ⁇ m -30 ⁇ m and a purity of >99.5%
  • TiO 2 has a particle size value of 1 ⁇ m -20 ⁇ m and a purity of >99.5%.
  • the low-melting inorganic binder suitable for the aluminum substrate of the third embodiment has a low softening point, a moderate melting temperature, and excellent dielectric properties and physical and chemical properties, which can effectively satisfy the aluminum substrate. Insulation medium, electronic paste inorganic binder requirements.
  • the low-melting inorganic binder of the third embodiment can be prepared by the following preparation method, in particular, a method for preparing a low-melting inorganic binder suitable for an aluminum substrate, which comprises the following processes step:
  • the molten mixture is subjected to water quenching treatment to obtain glass slag;
  • the dried glass slag is placed in a ball mill for crushing and ball milling, and then sieved to obtain a low-melting glass powder, and the low-melting inorganic binder is prepared.

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)

Abstract

L'invention concerne un liant inorganique à bas point de fusion approprié pour un substrat en aluminium et un procédé de préparation associé. Le liant inorganique à bas point de fusion comprend les matériaux suivants en parties en poids : SiO2 : 1 ％ à 20 ％; Bi2O3 : 30 ％ à 50 ％; B2O3 : 5 ％ à 40 ％; CaF2 : 5 ％ à 15 ％; SnO2 : 0,1 ％ à 2 ％; Al2O3 : 0,2 ％ à 15 ％; ZnO : 0,1 ％ à 5 ％; et TiO2 : 0,1 ％ à 2 ％. Le liant inorganique à bas point de fusion présente un point de ramollissement bas et une température de fusion modérée, ainsi qu'une excellente propriété diélectrique et d'excellentes propriétés physiques et chimiques, et peut répondre efficacement aux exigences pour un milieu isolant d'un substrat en aluminium et d'un liant inorganique de suspension électronique. Le procédé de préparation comprend les étapes de traitement suivantes : a) la pesée et l'agitation; b) le chauffage et la fusion; c) la trempe à l'eau; d) le séchage; et e) le meulage et le broyage à boulets. Au moyen de la conception des étapes de procédé ci-dessus, le procédé de préparation peut produire et préparer efficacement le liant inorganique à bas point de fusion.
PCT/CN2016/113349 2016-12-09 2016-12-30 Liant inorganique à bas point de fusion approprié pour un substrat en aluminium et procédé de préparation associé Ceased WO2018103165A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201611128393.XA CN106673452A (zh) 2016-12-09 2016-12-09 一种适用于铝基材的低熔点无机粘结剂及其制备方法
CN201611128393.X 2016-12-09

Publications (1)

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WO2018103165A1 true WO2018103165A1 (fr) 2018-06-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117486620A (zh) * 2023-10-30 2024-02-02 西华大学 一种氧化铝低温烧结助剂、氧化铝陶瓷材料及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112037960B (zh) * 2020-09-16 2022-03-15 湖南利德电子浆料股份有限公司 一种导电银浆及其制备方法和5g陶瓷滤波器
US12442244B2 (en) * 2022-11-23 2025-10-14 LuxWall, Inc. Vacuum insulated panel seal density

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CN1572744A (zh) * 2003-05-26 2005-02-02 日本电气硝子株式会社 电介质形成用玻璃及等离子体显示板用电介质形成材料
CN101164939A (zh) * 2006-10-19 2008-04-23 北京印刷学院 一种无铅钡硼酸盐低熔玻璃及其应用
JP2011079718A (ja) * 2009-10-09 2011-04-21 Nippon Electric Glass Co Ltd ビスマス系非鉛ガラス及び複合材料
CN104692663A (zh) * 2013-12-05 2015-06-10 辽宁法库陶瓷工程技术研究中心 高电阻率高膨胀系数铝及铝合金封接用玻璃粉及制备方法
CN104966546A (zh) * 2015-07-09 2015-10-07 福州阳光福斯新能源科技有限公司 一种晶体硅太阳能电池用背面银浆
CN105225723A (zh) * 2015-10-26 2016-01-06 东莞市圣龙特电子科技有限公司 一种铜导电浆料及其制备方法

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TWI487932B (zh) * 2013-11-21 2015-06-11 Global Wafers Co Ltd 光學元件及其製造方法

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CN1572744A (zh) * 2003-05-26 2005-02-02 日本电气硝子株式会社 电介质形成用玻璃及等离子体显示板用电介质形成材料
CN101164939A (zh) * 2006-10-19 2008-04-23 北京印刷学院 一种无铅钡硼酸盐低熔玻璃及其应用
JP2011079718A (ja) * 2009-10-09 2011-04-21 Nippon Electric Glass Co Ltd ビスマス系非鉛ガラス及び複合材料
CN104692663A (zh) * 2013-12-05 2015-06-10 辽宁法库陶瓷工程技术研究中心 高电阻率高膨胀系数铝及铝合金封接用玻璃粉及制备方法
CN104966546A (zh) * 2015-07-09 2015-10-07 福州阳光福斯新能源科技有限公司 一种晶体硅太阳能电池用背面银浆
CN105225723A (zh) * 2015-10-26 2016-01-06 东莞市圣龙特电子科技有限公司 一种铜导电浆料及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117486620A (zh) * 2023-10-30 2024-02-02 西华大学 一种氧化铝低温烧结助剂、氧化铝陶瓷材料及其制备方法
CN117486620B (zh) * 2023-10-30 2024-05-31 西华大学 一种氧化铝低温烧结助剂、氧化铝陶瓷材料及其制备方法

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