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WO2018103165A1 - 一种适用于铝基材的低熔点无机粘结剂及其制备方法 - Google Patents

一种适用于铝基材的低熔点无机粘结剂及其制备方法 Download PDF

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WO2018103165A1
WO2018103165A1 PCT/CN2016/113349 CN2016113349W WO2018103165A1 WO 2018103165 A1 WO2018103165 A1 WO 2018103165A1 CN 2016113349 W CN2016113349 W CN 2016113349W WO 2018103165 A1 WO2018103165 A1 WO 2018103165A1
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inorganic binder
low
melting
aluminum substrate
purity
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刘建
苏冠贤
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Dongguan Corehelm Electronic Materials Co Ltd
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Dongguan Corehelm Electronic Materials Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C12/00—Powdered glass; Bead compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders

Definitions

  • the invention relates to the technical field of electronic materials, in particular to a low melting point inorganic binder suitable for an aluminum substrate and a preparation method thereof.
  • the inorganic binder has a low glass transition temperature and a low melting temperature, and can be applied to sealing and bonding of components such as electronic devices and semiconductors, and can also be used in electronic pastes, dielectric materials, and the like.
  • Lead-containing low-melting glass is likely to cause environmental pollution and cause harm to the workers' workers. Although many low-melting glass overcome the above shortcomings, high temperatures are required to soften at low temperature softening and low temperature work, and only in this way Achieve welding.
  • the low-melting glass powder currently produced on the market mainly has the following defects, specifically: 1. The softening temperature is high; 3. The expansion coefficient is too large; 3. The dielectric properties are not good.
  • the object of the present invention is to provide a low-melting inorganic binder suitable for an aluminum substrate, which has a low softening point and a moderate melting temperature, and is suitable for an aluminum substrate. It has excellent dielectric properties and physical and chemical properties, that is, it can effectively meet the requirements of aluminum substrate insulation medium and electronic paste inorganic binder.
  • Another object of the present invention is to provide a process for producing a low-melting inorganic binder suitable for use in an aluminum substrate, which is capable of efficiently producing the above-mentioned low-melting inorganic binder.
  • a low-melting inorganic binder suitable for an aluminum substrate comprising the following parts by weight, specifically:
  • the inorganic binder is a mixed inorganic binder composed of an amorphous inorganic binder, a microcrystalline inorganic binder or an amorphous inorganic binder and a microcrystalline inorganic binder.
  • the SiO 2 has a particle size value of from 1 ⁇ m to 20 ⁇ m and a purity of from 99.5% to 99.9%.
  • the Bi 2 O 3 has a particle size value of 5 ⁇ m -50 ⁇ m and a purity of >99.9%.
  • the CaF 2 has a particle size value of 2 ⁇ m to 30 ⁇ m and a purity of >99.9%.
  • the SnO 2 has a particle size value of 10 ⁇ m -50 ⁇ m and a purity of >99.9%.
  • the Al 2 O 3 has a particle size value of from 1 ⁇ m to 20 ⁇ m and a purity of from 99.5 to 99.9%.
  • the B 2 O 3 has a particle size value of 5 ⁇ m -50 ⁇ m and a purity of >99.5%.
  • the ZnO has a particle size value of 2 ⁇ m -30 ⁇ m and a purity of >99.5%.
  • the TiO 2 has a particle size value of 1 ⁇ m -20 ⁇ m and a purity of >99.5%.
  • a preparation method of a low-melting inorganic binder suitable for an aluminum substrate comprises the following process steps, specifically:
  • the molten mixture is subjected to water quenching treatment to obtain glass slag;
  • the dried glass slag is placed in a ball mill for crushing and ball milling, and then sieved to obtain a low-melting glass powder, and the low-melting inorganic binder is prepared.
  • the low-melting inorganic binder suitable for the aluminum substrate of the invention comprises the following parts by weight, specifically: SiO 2 1%-20%, Bi 2 O 3 30%-50%, B 2 O 3 5%-40%, CaF 2 5%-15%, SnO 2 0.1%-2%, Al 2 O 3 0.2%-15%, ZnO 0.1%-5% TiO 2 0.1%-2%.
  • the low-melting inorganic binder suitable for the aluminum substrate of the invention has low softening point, moderate melting temperature, excellent dielectric properties and physical and chemical properties, and can effectively satisfy the aluminum substrate insulating medium. , electronic paste inorganic binder requirements.
  • Another advantageous effect of the present invention is a preparation method of a low-melting inorganic binder suitable for an aluminum substrate according to the present invention, which comprises the following process steps: a, accurately weighing SiO 2 , Bi 2 O 3 , B 2 O 3 , CaF 2 , SnO 2 , Al 2 O 3 , ZnO, TiO 2 , and then we will weigh SiO 2 , Bi 2 O 3 , B 2 O 3 , CaF 2 , SnO 2 , Al 2 O 3 , ZnO , TiO 2 are placed in a mixer for mixing and mixing; b, composed of SiO 2 , Bi 2 O 3 , B 2 O 3 , CaF 2 , SnO 2 , Al 2 O 3 , ZnO, TiO 2 After the mixture is thoroughly mixed, the mixture is poured into a platinum crucible, and slowly heated to 400 ° C at a heating rate of 1-5 ° C / min and held for 60 min, and then further heated at a temperature increase rate of
  • the preparation method can efficiently produce the above-mentioned low-melting inorganic binder.
  • Embodiment 1 A low-melting inorganic binder suitable for an aluminum substrate, comprising the following parts by weight, specifically:
  • the inorganic binder is a mixed inorganic binder composed of an amorphous inorganic binder, a microcrystalline inorganic binder or an amorphous inorganic binder and a microcrystalline inorganic binder.
  • the particle size of SiO 2 is 1 ⁇ m -20 ⁇ m, the purity is 99.5%-99.9%; the particle size of Bi 2 O 3 is 5 ⁇ m -50 ⁇ m, the purity is >99.9%; the particle size of CaF 2 is 2 ⁇ m -30 ⁇ m, purity.
  • SnO 2 has a particle size value of 10 ⁇ m -50 ⁇ m, purity >99.9%
  • Al 2 O 3 has a particle size value of 1 ⁇ m -20 ⁇ m, purity 99.5-99.9%
  • B 2 O 3 particle size value is 5 ⁇ m -50 ⁇ m, purity >99.5-%
  • ZnO has a particle size value of 2 ⁇ m -30 ⁇ m and a purity of >99.5%
  • TiO 2 has a particle size value of 1 ⁇ m -20 ⁇ m and a purity of >99.5%.
  • the low-melting inorganic binder suitable for the aluminum substrate of the first embodiment has a low softening point, a moderate melting temperature, and excellent dielectric properties and physical and chemical properties, which can effectively satisfy the aluminum substrate. Insulation medium, electronic paste inorganic binder requirements.
  • the low-melting inorganic binder of the first embodiment can be prepared by the following preparation method, in particular, a method for preparing a low-melting inorganic binder suitable for an aluminum substrate, which comprises the following processes step:
  • the molten mixture is subjected to water quenching treatment to obtain glass slag;
  • the dried glass slag is placed in a ball mill for crushing and ball milling, and then sieved to obtain a low-melting glass powder, and the low-melting inorganic binder is prepared.
  • Embodiment 2 a low-melting inorganic binder suitable for an aluminum substrate, comprising the following parts by weight, specifically:
  • the inorganic binder is a mixed inorganic binder composed of an amorphous inorganic binder, a microcrystalline inorganic binder or an amorphous inorganic binder and a microcrystalline inorganic binder.
  • the particle size of SiO 2 is 1 ⁇ m -20 ⁇ m, the purity is 99.5%-99.9%; the particle size of Bi 2 O 3 is 5 ⁇ m -50 ⁇ m, the purity is >99.9%; the particle size of CaF 2 is 2 ⁇ m -30 ⁇ m, purity.
  • SnO 2 has a particle size value of 10 ⁇ m -50 ⁇ m, purity >99.9%
  • Al 2 O 3 has a particle size value of 1 ⁇ m -20 ⁇ m, purity 99.5-99.9%
  • B 2 O 3 particle size value is 5 ⁇ m -50 ⁇ m, purity >99.5-%
  • ZnO has a particle size value of 2 ⁇ m -30 ⁇ m and a purity of >99.5%
  • TiO 2 has a particle size value of 1 ⁇ m -20 ⁇ m and a purity of >99.5%.
  • the low-melting inorganic binder suitable for the aluminum substrate of the second embodiment has a low softening point, a moderate melting temperature, and excellent dielectric properties and physical and chemical properties, which can effectively satisfy the aluminum substrate. Insulation medium, electronic paste inorganic binder requirements.
  • the low-melting inorganic binder of the second embodiment can be prepared by the following preparation method, in particular, a method for preparing a low-melting inorganic binder suitable for an aluminum substrate, which comprises the following processes step:
  • the molten mixture is subjected to water quenching treatment to obtain glass slag;
  • the dried glass slag is placed in a ball mill for crushing and ball milling, and then sieved to obtain a low-melting glass powder, and the low-melting inorganic binder is prepared.
  • Embodiment 3 is a low-melting inorganic binder suitable for an aluminum substrate, comprising the following parts by weight, specifically:
  • the inorganic binder is a mixed inorganic binder composed of an amorphous inorganic binder, a microcrystalline inorganic binder or an amorphous inorganic binder and a microcrystalline inorganic binder.
  • the particle size of SiO 2 is 1 ⁇ m -20 ⁇ m, the purity is 99.5%-99.9%; the particle size of Bi 2 O 3 is 5 ⁇ m -50 ⁇ m, the purity is >99.9%; the particle size of CaF 2 is 2 ⁇ m -30 ⁇ m, purity.
  • SnO 2 has a particle size value of 10 ⁇ m -50 ⁇ m, purity >99.9%
  • Al 2 O 3 has a particle size value of 1 ⁇ m -20 ⁇ m, purity 99.5-99.9%
  • B 2 O 3 particle size value is 5 ⁇ m -50 ⁇ m, purity >99.5-%
  • ZnO has a particle size value of 2 ⁇ m -30 ⁇ m and a purity of >99.5%
  • TiO 2 has a particle size value of 1 ⁇ m -20 ⁇ m and a purity of >99.5%.
  • the low-melting inorganic binder suitable for the aluminum substrate of the third embodiment has a low softening point, a moderate melting temperature, and excellent dielectric properties and physical and chemical properties, which can effectively satisfy the aluminum substrate. Insulation medium, electronic paste inorganic binder requirements.
  • the low-melting inorganic binder of the third embodiment can be prepared by the following preparation method, in particular, a method for preparing a low-melting inorganic binder suitable for an aluminum substrate, which comprises the following processes step:
  • the molten mixture is subjected to water quenching treatment to obtain glass slag;
  • the dried glass slag is placed in a ball mill for crushing and ball milling, and then sieved to obtain a low-melting glass powder, and the low-melting inorganic binder is prepared.

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Abstract

一种适用于铝基材的低熔点无机粘结剂及其制备方法，该低熔点无机粘结剂包括以下重量份的物料：SiO 21％-20％、Bi 2O 330％-50％、B 2O 35％-40％、CaF 25％-15％、SnO 20.1％-2％、Al 2O 30.2％-15％、ZnO0.1％-5％、TiO 20.1％-2％；该低熔点无机粘结剂软化点低、熔化温度适中，且具有优异的介电性能、理化性能，即可以有效地满足铝基材绝缘介质、电子浆料无机粘结剂要求。该制备方法包括以下工艺步骤：a、称取搅拌；b、加热熔炼；c、水淬；d、干燥；e、粉碎球磨。通过上述工艺步骤设计，该制备方法能够有效地生产制备上述低熔点无机粘结剂。

Description

一种适用于铝基材的低熔点无机粘结剂及其制备方法
技术领域
本发明涉及电子材料技术领域，尤其涉及一种适用于铝基材的低熔点无机粘结剂及其制备方法。
背景技术
无机粘结剂玻璃化转变温度以及熔化温度较低，其可应用于电子器件以及半导体等元件的封接、粘合等方面，也可以用在电子浆料、介电材料等方面。
含铅低熔点玻璃容易造成环境污染并会对生产工人的身体造成伤害，虽然很多低熔点玻璃克服了上述缺点，但是在低温软化以及低温工作方面仍然需要较高的温度才能软化，且只有这样才能实现焊接。
需进一步指出，目前市场上生产的低熔点玻璃粉主要存在以下缺陷，具体为：1、软化温度较高；3、膨胀系数过大；3、介电性能不佳。
发明内容
本发明的目的在于针对现有技术的不足而提供一种适用于铝基材的低熔点无机粘结剂，该适用于铝基材的低熔点无机粘结剂软化点低、熔化温度适中，且具有优异的介电性能、理化性能，即可以有效地满足铝基材绝缘介质、电子浆料无机粘结剂要求。
本发明的另一目的在于提供一种适用于铝基材的低熔点无机粘结剂的制备方法，该制备方法能够有效地生产制备上述低熔点无机粘结剂。
为达到上述目的，本发明通过以下技术方案来实现。
一种适用于铝基材的低熔点无机粘结剂，包括有以下重量份的物料，具体为：
SiO2 1%-20%
Bi2O3 30%-50%
B 2 O3 5%-40%
CaF2 5%-15%
SnO2 0.1%-2%
Al2O3 0.2%-15%
ZnO 0.1%-5%
TiO2 0.1%-2%；
其中，该无机粘结剂为非晶态无机粘结剂、微晶态无机粘结剂或者非晶态无机粘结剂与微晶态无机粘结剂所组成的混合无机粘结剂。
其中，所述SiO2的粒度值为1μm -20μm，纯度为99.5%-99.9%。
其中，所述Bi2O3的粒度值为5μm -50μm，纯度＞99.9%。
其中，所述CaF2的粒度值为2μm -30μm，纯度＞99.9%。
其中，所述SnO2的粒度值为10μm -50μm，纯度＞99.9%。
其中，所述Al2O3的粒度值为1μm -20μm，纯度99.5-99.9%。
其中，所述B2O3的粒度值为5μm -50μm，纯度＞99.5%。
其中，所述ZnO的粒度值为2μm -30μm，纯度＞99.5%。
其中，所述TiO2的粒度值为1μm -20μm，纯度＞99.5%。
一种适用于铝基材的低熔点无机粘结剂的制备方法，包括有以下工艺步骤，具体为：
a、准确称取SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2 ，而后将称取好的SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2置于混料机中进行搅拌混合；
b、待SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2所组成的混合料充分混合后，将混合料倒入至铂金坩埚中，并用1-5℃/min的升温速度缓慢升温到400℃并保温60min，而后再以10-30℃/min的升温速度继续升温至1100℃并保温2小时；
c、对熔融的混合料进行水淬处理，以获得玻璃渣；
d、对玻璃渣进行干燥处理；
e、将干燥后的玻璃渣置于球磨机中进行粉碎球磨处理，而后过筛以获得低熔点玻璃粉，低熔点无机粘结剂制备完毕。
本发明的有益效果为：本发明所述的一种适用于铝基材的低熔点无机粘结剂，其包括有以下重量份的物料，具体为：SiO2 1%-20%、Bi2O3 30%-50%、B2O3 5%-40%、CaF2 5%-15%、SnO2 0.1%-2% 、Al2O30.2%-15%、ZnO0.1%-5%、TiO2 0.1%-2%。通过上述物料配比，本发明的适用于铝基材的低熔点无机粘结剂软化点低、熔化温度适中，且具有优异的介电性能、理化性能，即可以有效地满足铝基材绝缘介质、电子浆料无机粘结剂要求。
本发明的另一有益效果为：本发明所述的一种适用于铝基材的低熔点无机粘结剂的制备方法，其包括有以下工艺步骤：a、准确称取SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2 ，而后将称取好的SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2置于混料机中进行搅拌混合；b、待SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2所组成的混合料充分混合后，将混合料倒入至铂金坩埚中，并用1-5℃/min的升温速度缓慢升温到400℃并保温60min，而后再以10-30℃/min的升温速度继续升温至1100℃并保温2小时；c、对熔融的混合料进行水淬处理，以获得玻璃渣；d、对玻璃渣进行干燥处理；e、将干燥后的玻璃渣置于球磨机中进行粉碎球磨处理，而后过筛以获得低熔点玻璃粉，低熔点无机粘结剂制备完毕。通过上述工艺步骤设计，该制备方法能够有效地生产制备上述低熔点无机粘结剂。
具体实施方式
下面结合具体的实施方式来对本发明进行说明。
实施例一，一种适用于铝基材的低熔点无机粘结剂，包括有以下重量份的物料，具体为：
SiO2 5%
Bi2O3 50%
B2O3 35%
CaF2 5%
SnO2 1%
Al2O3 1%
ZnO 2%
TiO2 1%；
其中，该无机粘结剂为非晶态无机粘结剂、微晶态无机粘结剂或者非晶态无机粘结剂与微晶态无机粘结剂所组成的混合无机粘结剂。
需进一步指出，SiO2的粒度值为1μm -20μm，纯度为99.5%-99.9%；Bi2O3的粒度值为5μm -50μm，纯度＞99.9%；CaF2的粒度值为2μm -30μm，纯度＞99.9%；SnO2的粒度值为10μm -50μm，纯度＞99.9%；Al2O3的粒度值为1μm -20μm，纯度99.5-99.9%；B2O3的粒度值为5μm -50μm，纯度＞99.5-%；ZnO的粒度值为2μm -30μm，纯度＞99.5%；TiO2的粒度值为1μm -20μm，纯度＞99.5%。
通过上述物料配比，本实施例一的适用于铝基材的低熔点无机粘结剂软化点低、熔化温度适中，且具有优异的介电性能、理化性能，即可以有效地满足铝基材绝缘介质、电子浆料无机粘结剂要求。
需进一步解释，本实施例一的低熔点无机粘结剂可以采用以下制备方法制备而成，具体的，一种适用于铝基材的低熔点无机粘结剂的制备方法，其包括有以下工艺步骤：
a、准确称取SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2 ，而后将称取好的SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2置于混料机中进行搅拌混合；
b、待SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2所组成的混合料充分混合后，将混合料倒入至铂金坩埚中，并用3℃/min的升温速度缓慢升温到400℃并保温60min，而后再以10℃/min的升温速度继续升温至1100℃并保温2小时；
c、对熔融的混合料进行水淬处理，以获得玻璃渣；
d、对玻璃渣进行干燥处理；
e、将干燥后的玻璃渣置于球磨机中进行粉碎球磨处理，而后过筛以获得低熔点玻璃粉，低熔点无机粘结剂制备完毕。
实施例二，一种适用于铝基材的低熔点无机粘结剂，包括有以下重量份的物料，具体为：
SiO2 10%
Bi2O3 30%
B2O3 40%
CaF2 10%
SnO2 2%
Al2O3 5%
ZnO 1%
TiO2 2%；
其中，该无机粘结剂为非晶态无机粘结剂、微晶态无机粘结剂或者非晶态无机粘结剂与微晶态无机粘结剂所组成的混合无机粘结剂。
需进一步指出，SiO2的粒度值为1μm -20μm，纯度为99.5%-99.9%；Bi2O3的粒度值为5μm -50μm，纯度＞99.9%；CaF2的粒度值为2μm -30μm，纯度＞99.9%；SnO2的粒度值为10μm -50μm，纯度＞99.9%；Al2O3的粒度值为1μm -20μm，纯度99.5-99.9%；B2O3的粒度值为5μm -50μm，纯度＞99.5-%；ZnO的粒度值为2μm -30μm，纯度＞99.5%；TiO2的粒度值为1μm -20μm，纯度＞99.5%。
通过上述物料配比，本实施例二的适用于铝基材的低熔点无机粘结剂软化点低、熔化温度适中，且具有优异的介电性能、理化性能，即可以有效地满足铝基材绝缘介质、电子浆料无机粘结剂要求。
需进一步解释，本实施例二的低熔点无机粘结剂可以采用以下制备方法制备而成，具体的，一种适用于铝基材的低熔点无机粘结剂的制备方法，其包括有以下工艺步骤：
a、准确称取SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2 ，而后将称取好的SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2置于混料机中进行搅拌混合；
b、待SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2所组成的混合料充分混合后，将混合料倒入至铂金坩埚中，并用4℃/min的升温速度缓慢升温到400℃并保温60min，而后再以20℃/min的升温速度继续升温至1100℃并保温2小时；
c、对熔融的混合料进行水淬处理，以获得玻璃渣；
d、对玻璃渣进行干燥处理；
e、将干燥后的玻璃渣置于球磨机中进行粉碎球磨处理，而后过筛以获得低熔点玻璃粉，低熔点无机粘结剂制备完毕。
实施例三，一种适用于铝基材的低熔点无机粘结剂，包括有以下重量份的物料，具体为：
SiO2 20%
Bi2O3 35%
B2O3 20%
CaF2 15%
SnO2 2%
Al2O3 5%
ZnO 2%
TiO2 1%；
其中，该无机粘结剂为非晶态无机粘结剂、微晶态无机粘结剂或者非晶态无机粘结剂与微晶态无机粘结剂所组成的混合无机粘结剂。
需进一步指出，SiO2的粒度值为1μm -20μm，纯度为99.5%-99.9%；Bi2O3的粒度值为5μm -50μm，纯度＞99.9%；CaF2的粒度值为2μm -30μm，纯度＞99.9%；SnO2的粒度值为10μm -50μm，纯度＞99.9%；Al2O3的粒度值为1μm -20μm，纯度99.5-99.9%；B2O3的粒度值为5μm -50μm，纯度＞99.5-%；ZnO的粒度值为2μm -30μm，纯度＞99.5%；TiO2的粒度值为1μm -20μm，纯度＞99.5%。
通过上述物料配比，本实施例三的适用于铝基材的低熔点无机粘结剂软化点低、熔化温度适中，且具有优异的介电性能、理化性能，即可以有效地满足铝基材绝缘介质、电子浆料无机粘结剂要求。
需进一步解释，本实施例三的低熔点无机粘结剂可以采用以下制备方法制备而成，具体的，一种适用于铝基材的低熔点无机粘结剂的制备方法，其包括有以下工艺步骤：
a、准确称取SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2 ，而后将称取好的SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2置于混料机中进行搅拌混合；
b、待SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2所组成的混合料充分混合后，将混合料倒入至铂金坩埚中，并用5℃/min的升温速度缓慢升温到400℃并保温60min，而后再以30℃/min的升温速度继续升温至1100℃并保温2小时；
c、对熔融的混合料进行水淬处理，以获得玻璃渣；
d、对玻璃渣进行干燥处理；
e、将干燥后的玻璃渣置于球磨机中进行粉碎球磨处理，而后过筛以获得低熔点玻璃粉，低熔点无机粘结剂制备完毕。
以上内容仅为本发明的较佳实施例，对于本领域的普通技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，本说明书内容不应理解为对本发明的限制。

Claims (10)

  1. 一种适用于铝基材的低熔点无机粘结剂，其特征在于，包括有以下重量份的物料，具体为：
    SiO2 1%-20%
    Bi2O3 30%-50%
    B2O3 5%-40%
    CaF2 5%-15%
    SnO2 0.1%-2%
    Al2O3 0.2%-15%
    ZnO 0.1%-5%
    TiO2 0.1%-2%；
    其中，该无机粘结剂为非晶态无机粘结剂、微晶态无机粘结剂或者非晶态无机粘结剂与微晶态无机粘结剂所组成的混合无机粘结剂。
  2. 根据权利要求1所述的一种适用于铝基材的低熔点无机粘结剂，其特征在于：所述SiO2的粒度值为1μm -20μm，纯度为99.5%-99.9%。
  3. 根据权利要求1所述的一种适用于铝基材的低熔点无机粘结剂，其特征在于：所述Bi2O3的粒度值为5μm -50μm，纯度＞99.9%。
  4. 根据权利要求1所述的一种适用于铝基材的低熔点无机粘结剂，其特征在于：所述CaF2的粒度值为2μm -30μm，纯度＞99.9%。
  5. 根据权利要求1所述的一种适用于铝基材的低熔点无机粘结剂，其特征在于：所述SnO2的粒度值为10μm -50μm，纯度＞99.9%。
  6. 根据权利要求1所述的一种适用于铝基材的低熔点无机粘结剂，其特征在于：所述Al2O3的粒度值为1μm -20μm，纯度99.5-99.9%。
  7. 根据权利要求1所述的一种适用于铝基材的低熔点无机粘结剂，其特征在于：所述B2O3的粒度值为5μm -50μm，纯度＞99.5-%。
  8. 根据权利要求1所述的一种适用于铝基材的低熔点无机粘结剂，其特征在于：所述ZnO的粒度值为2μm -30μm，纯度＞99.5%。
  9. 根据权利要求1所述的一种适用于铝基材的低熔点无机粘结剂，其特征在于：所述TiO2的粒度值为1μm -20μm，纯度＞99.5%。
  10. 一种适用于铝基材的低熔点无机粘结剂的制备方法，其特征在于，包括有以下工艺步骤，具体为：
    a、准确称取SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2 ，而后将称取好的SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2置于混料机中进行搅拌混合；
    b、待SiO2、Bi2O3、B2O3、CaF2、SnO2、Al2O3 、ZnO 、TiO2所组成的混合料充分混合后，将混合料倒入至铂金坩埚中，并用1-5℃/min的升温速度缓慢升温到400℃并保温60min，而后再以10-30℃/min的升温速度继续升温至1100℃并保温2小时；
    c、对熔融的混合料进行水淬处理，以获得玻璃渣；
    d、对玻璃渣进行干燥处理；
    e、将干燥后的玻璃渣置于球磨机中进行粉碎球磨处理，而后过筛以获得低熔点玻璃粉，低熔点无机粘结剂制备完毕。
PCT/CN2016/113349 2016-12-09 2016-12-30 一种适用于铝基材的低熔点无机粘结剂及其制备方法 Ceased WO2018103165A1 (zh)

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