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WO2016037387A1 - Lampe à diodes électroluminescentes sans substrat et son procédé de fabrication - Google Patents

Lampe à diodes électroluminescentes sans substrat et son procédé de fabrication Download PDF

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Publication number
WO2016037387A1
WO2016037387A1 PCT/CN2014/087076 CN2014087076W WO2016037387A1 WO 2016037387 A1 WO2016037387 A1 WO 2016037387A1 CN 2014087076 W CN2014087076 W CN 2014087076W WO 2016037387 A1 WO2016037387 A1 WO 2016037387A1
Authority
WO
WIPO (PCT)
Prior art keywords
led lamp
base
layer
circuit layer
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/087076
Other languages
English (en)
Chinese (zh)
Inventor
朱怀才
陈列
王忠强
唐雪梅
钟毅文
朱正红
许环杰
徐文明
林和武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Sinoplast Industrial Co Ltd
Original Assignee
Dongguan Sinoplast Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Sinoplast Industrial Co Ltd filed Critical Dongguan Sinoplast Industrial Co Ltd
Publication of WO2016037387A1 publication Critical patent/WO2016037387A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/0015—Fastening arrangements intended to retain light sources
    • F21V19/0025—Fastening arrangements intended to retain light sources the fastening means engaging the conductors of the light source, i.e. providing simultaneous fastening of the light sources and their electric connections
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00—Properties
    • C08L2201/08—Stabilised against heat, light or radiation or oxydation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets

Definitions

  • the invention relates to the technical field of LED lamps, in particular to a substrateless LED lamp without substrate and good heat dissipation effect and a preparation method thereof.
  • LED indicators are increasing, and LED lighting products have been used more and more for their long life, energy saving and environmental protection.
  • Single LED The lamp is relatively concentrated in heat generation, and the generated heat is large, and solving the heat dissipation problem is the key.
  • the current LED Most of the lamps are soldered to the aluminum substrate or the ceramic substrate, and then the aluminum substrate or the ceramic substrate and the support are connected. Therefore, the LED lamp bead and the support are separated by an aluminum substrate or a ceramic substrate. Due to the presence of the aluminum substrate or the ceramic substrate, the thermal resistance between the LED lamp bead and the support is increased, and the heat dissipation effect is reduced, resulting in LED The life of the lamp bead is greatly reduced.
  • the cost of the aluminum substrate is high, the manufacturing process is complicated, and the electrical insulation performance is poor; the ceramic substrate requires high-temperature sintering molding, complicated process, high price, poor mechanical properties, and brittleness.
  • Patent CN201210510374.9 discloses a substrateless LED lamp and a preparation method thereof, which are formed by injection molding an insulating plastic which is selectively metallized, high temperature resistant and high thermal conductivity into the base, and after laser activation of the base A circuit layer and a heat conductive layer are formed.
  • this patent uses a highly thermally conductive insulating plastic having a relatively high manufacturing cost as a substrate, and it incorporates a metallizable additive into the insulating plastic, which is used in a large amount.
  • the technical problem to be solved by the invention is a substrateless LED lamp and a preparation method thereof, and the conventional circuit substrate is discarded, and the LED lamp bead is directly mounted on the base, thereby saving production cost.
  • the present invention provides a substrateless LED lamp comprising a base and an LED lamp bead on the base Selectively metallized powder coating by electrostatic spraying After that, the circuit layer and the heat conductive layer are formed by laser etching and electroless plating.
  • the pins of the LED lamp bead are soldered on the circuit layer, and a conductive path is formed with the circuit layer, and the bottom of the LED lamp bead is closely attached to the heat conducting layer to facilitate the LED.
  • the heat of the lamp beads is conducted to the base.
  • the base is injection molded from a high temperature resistant, high thermal conductivity, high conductivity, high temperature resistant polyamide composition.
  • the circuit layer has a thickness of 0.005 mm to 0.4 mm.
  • the heat conductive layer has a thickness of 0.005 mm to 0.4 mm.
  • the LED lamp bead is directly mounted on the circuit layer, which saves the traditional substrate components, saves the manufacturing cost, and directly transfers heat by the base to achieve the purpose of heat dissipation, which is convenient and quick.
  • the present invention also provides a method for preparing a substrateless LED lamp, comprising the following steps:
  • the high temperature resistant, high thermal conductivity, high conductivity high temperature resistant polyamide composition is injection molded into a base by an injection molding machine, and the injection temperature is 280. ⁇ 320 ° C;
  • the baking in the step (2) is cured by baking at a temperature of 100 to 250 ° C for 5 to 60 minutes.
  • the laser etching in the step (4) employs a laser beam having a wavelength of 1000 nm and an energy of 200 mJ/cm 2 .
  • the high temperature resistant polyamide composition is prepared from the following parts by weight of raw materials:
  • the total weight of the high temperature resistant polyamide and the conductive graphite is 100 parts.
  • the above raw materials are mixed in a screw extruder to prepare a high temperature resistant polyamide composition.
  • the high temperature resistant polyamide composition is prepared by a screw extruder having an extrusion temperature of 260 to 330 ° C and a screw rotation speed of 100 to 500 rpm.
  • FIG. 1 is a schematic structural view of a substrateless LED lamp of the present invention
  • FIG. 2 is a schematic top plan view of a substrateless LED lamp of the present invention.
  • the invention discloses a substrateless LED lamp, as shown in Figures 1 and 2, comprising a base 10 and a plurality of LED lamp beads 20 on the base 10, after the base 10 is electrostatically sprayed with a selectively metallized powder coating. Then, the circuit layer 11 and the heat conductive layer 12 are formed by laser etching and electroless plating, and the pin 21 of the LED lamp bead 20 is soldered on the circuit layer 11, so that the LED lamp bead 20 forms a conductive path with the circuit layer 11, and the LED lamp bead 20 The bottom is closely attached to the heat conducting layer 12, so that the heat generated by the LED lamp bead 20 is transmitted to the base 10, thereby realizing timely heat dissipation. By directly arranging the circuit layer 11 on the base 10, the conventional substrate is discarded, and the LED lamp bead 20 is directly mounted on the circuit layer 11 of the base 10, thereby saving manufacturing costs.
  • the base 10 has the characteristics of high temperature resistance, high thermal conductivity and high electrical conductivity.
  • the high temperature resistance can make the base 10 not easily deformed at high temperatures, and the high thermal conductivity facilitates the heat generated by the LED lamp bead 20 to be quickly dissipated through the base 10, extending the LED. Lamp life, Its high electrical conductivity makes it easier for the base 10 to be electrostatically sprayed with a selectively metallizable powder coating.
  • the circuit layer 11 and the heat conductive layer 12 are specifically disposed, the circuit layer 11 and the heat conductive layer 12 are spaced apart.
  • the thickness of the circuit layer 11 is 0.005 mm to 0.4 mm.
  • the thickness of the heat conductive layer 12 is 0.005 mm to 0.4 mm.
  • the thickness of the circuit layer 11 may be specifically 0.005 mm, or 0.01 mm, or 0.4 mm, and the thickness of the heat conductive layer 12 may be specifically 0.005 mm, or 0.01 mm, or 0.4 mm, and the specific size may be in the above range according to actual needs. Select settings internally.
  • the power of the LED bead 20 is typically 5W.
  • the present invention also discloses a method for preparing a substrateless LED lamp, comprising the following steps:
  • the high temperature resistant, high thermal conductivity, high conductivity high temperature resistant polyamide composition is injection molded into a base by an injection molding machine, and the injection temperature is 280. ⁇ 320°C, the shape and size of the base are flexibly set according to the application of the LED lamp.
  • the selectively metallized powder coating is electrostatically sprayed on the base and baked to cure.
  • the powder coating is a selectively metallizable powder coating having a coating layer on the surface of the base.
  • baking can be specifically cured at a temperature of 100 ° C for 60 minutes, or baked at a temperature of 150 ° C for 30 minutes, or at a temperature of 250 ° C. Bake and cure for 5 minutes.
  • the base 10 is injection molded from a high temperature resistant polyamide composition prepared from the following parts by weight of raw materials:
  • the total weight of the high temperature resistant polyamide and the conductive graphite is 100 parts.
  • the above raw materials are mixed in proportion, and then the mixed raw materials are placed in a screw extruder to prepare a high temperature resistant polyamide composition.
  • the extrusion temperature of the screw extruder is 260-330 ° C, and the screw rotation speed is 100-500 rpm. .
  • the specific formula weight setting of the composition can be selected within the above range according to the actual needs of the base 10.
  • composition can be specifically prepared from the following parts by weight of the raw materials:
  • the total weight of the high temperature resistant polyamide and the conductive graphite is 100 parts.
  • the extrusion temperatures of the respective sections of the screw extruder were 260 ° C, 290 ° C, 310 ° C, 310 ° C, 310 ° C, and 310 ° C, and the screw rotation speed was 100 rpm.
  • composition is prepared from the following parts by weight of the raw materials:
  • the total weight of the high temperature resistant polyamide and the conductive graphite is 100 parts.
  • the extrusion temperatures of the respective sections of the screw extruder were 280 ° C, 320 ° C, 330 ° C, 330 ° C, 330 ° C, 320 ° C, and the screw rotation speed was 500 rpm.
  • composition is prepared from the following parts by weight of the raw materials:
  • the total weight of the high temperature resistant polyamide and the conductive graphite is 100 parts.
  • the extrusion temperatures of the respective sections of the screw extruder were 280 ° C, 300 ° C, 310 ° C, 315 ° C, 315 ° C, and 310 ° C, and the screw rotation speed was 300 rpm.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Cette invention concerne une lampe à DEL sans substrat et son procédé de fabrication, comprenant une base (10) et une ampoule à DEL (20). Un revêtement de métallisation sélective en forme de poudre est pulvérisé de manière électrostatique sur la base (10), puis une couche de circuit (11) et une couche thermoconductrice (12) sont formées et produites par gravure au laser et dépôt chimique, les broches (21) de l'ampoule à DEL (20) sont soudées sur la couche de circuit (11) pour permettre à l'ampoule à DEL (20) et à la couche de circuit (11) de former un tracé conducteur. Le fond de l'ampoule à DEL (20) est étroitement fixé à la couche thermoconductrice (12) afin de faciliter le transfert de chaleur de l'ampoule à DEL (20) vers la base (10). La base (10) est formé par moulage par injection d'un polyamide résistant aux températures élevées. L'invention permet d'éviter l'utilisation d'une carte de circuit imprimé est évitée, de former directement la couche de circuit sur la base (10), et de monter directement l'ampoule à DEL (20) sur la base (10) de façon à réduire les coûts.
PCT/CN2014/087076 2014-09-10 2014-09-22 Lampe à diodes électroluminescentes sans substrat et son procédé de fabrication Ceased WO2016037387A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410456521.8 2014-09-10
CN201410456521.8A CN104329597B (zh) 2014-09-10 2014-09-10 一种无基板led灯及其制备方法

Publications (1)

Publication Number Publication Date
WO2016037387A1 true WO2016037387A1 (fr) 2016-03-17

Family

ID=52404370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/087076 Ceased WO2016037387A1 (fr) 2014-09-10 2014-09-22 Lampe à diodes électroluminescentes sans substrat et son procédé de fabrication

Country Status (2)

Country Link
CN (1) CN104329597B (fr)
WO (1) WO2016037387A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106641952A (zh) * 2016-09-30 2017-05-10 武汉通畅汽车电子照明有限公司 一种汽车信号灯安装支架
CN106439684A (zh) * 2016-09-30 2017-02-22 武汉通畅汽车电子照明有限公司 一种采用激光刻蚀技术的汽车信号灯
CN108679583A (zh) * 2018-04-08 2018-10-19 伍连彬 一种照明设备及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030031803A1 (en) * 2001-03-15 2003-02-13 Christian Belouet Method of metallizing a substrate part
CN1735712A (zh) * 2003-01-03 2006-02-15 塞米卡股份有限公司 用于在绝缘基底上沉积金属的具有可调节粘度的光敏分散体和其用途
CN101949521A (zh) * 2010-08-24 2011-01-19 广州南科集成电子有限公司 一种led集成光源板及其制造方法
CN102775768A (zh) * 2012-07-13 2012-11-14 东莞市信诺橡塑工业有限公司 用于led光源基板的可激光直接成型的高导热绝缘聚酰胺6组合物及其制备方法
CN102980066A (zh) * 2012-12-03 2013-03-20 东莞市信诺橡塑工业有限公司 无基板led灯及其制备方法
CN203364050U (zh) * 2013-07-12 2013-12-25 深圳市中塑新材料有限公司 Led灯装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006206672A (ja) * 2005-01-26 2006-08-10 Mitsubishi Engineering Plastics Corp ポリアミド樹脂組成物および導電性軸状成形品
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
CN102796372B (zh) * 2012-08-01 2014-06-11 东莞市信诺橡塑工业有限公司 用于led光源基板的可激光直接成型的高导热绝缘聚酰胺66组合物及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030031803A1 (en) * 2001-03-15 2003-02-13 Christian Belouet Method of metallizing a substrate part
CN1735712A (zh) * 2003-01-03 2006-02-15 塞米卡股份有限公司 用于在绝缘基底上沉积金属的具有可调节粘度的光敏分散体和其用途
CN101949521A (zh) * 2010-08-24 2011-01-19 广州南科集成电子有限公司 一种led集成光源板及其制造方法
CN102775768A (zh) * 2012-07-13 2012-11-14 东莞市信诺橡塑工业有限公司 用于led光源基板的可激光直接成型的高导热绝缘聚酰胺6组合物及其制备方法
CN102980066A (zh) * 2012-12-03 2013-03-20 东莞市信诺橡塑工业有限公司 无基板led灯及其制备方法
CN203364050U (zh) * 2013-07-12 2013-12-25 深圳市中塑新材料有限公司 Led灯装置

Also Published As

Publication number Publication date
CN104329597A (zh) 2015-02-04
CN104329597B (zh) 2016-11-23

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