[go: up one dir, main page]

WO2012115519A3 - Cellule solaire et procédé de fabrication d'une telle cellule solaire - Google Patents

Cellule solaire et procédé de fabrication d'une telle cellule solaire Download PDF

Info

Publication number
WO2012115519A3
WO2012115519A3 PCT/NL2012/050114 NL2012050114W WO2012115519A3 WO 2012115519 A3 WO2012115519 A3 WO 2012115519A3 NL 2012050114 W NL2012050114 W NL 2012050114W WO 2012115519 A3 WO2012115519 A3 WO 2012115519A3
Authority
WO
WIPO (PCT)
Prior art keywords
front surface
conductivity type
solar cell
layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/NL2012/050114
Other languages
English (en)
Other versions
WO2012115519A2 (fr
Inventor
Lambert Johan Geerligs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Research Centre of the Netherlands
Original Assignee
Energy Research Centre of the Netherlands
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Research Centre of the Netherlands filed Critical Energy Research Centre of the Netherlands
Publication of WO2012115519A2 publication Critical patent/WO2012115519A2/fr
Publication of WO2012115519A3 publication Critical patent/WO2012115519A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire à partir d'un substrat semi-conducteur, le substrat semi-conducteur ayant une surface avant et une surface arrière, le procédé consistant : - à texturer la surface avant pour créer une surface avant texturée : - à lisser partiellement la surface avant texturée ; - à créer une couche d'un premier type de conductivité dans le substrat semi-conducteur adjacent à la surface avant texturée et lissée, par diffusion d'un dopant du premier type de conductivité dans la surface avant texturée ; - à créer une couche de passivation sur la surface avant par dépôt ou traitement chimique en phase humide après avoir créé ladite couche du premier type de conductivité ; - à déposer un système d'électrodes sur la surface arrière sans diffusion préalable d'une couche d'un second type de conductivité dans le substrat semi-conducteur adjacent à la surface arrière ou au plus avec diffusion d'une telle couche du second type de conductivité sélectivement sur le côté arrière seulement.
PCT/NL2012/050114 2011-02-24 2012-02-24 Cellule solaire et procédé de fabrication d'une telle cellule solaire Ceased WO2012115519A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2006298 2011-02-24
NL2006298A NL2006298C2 (en) 2011-02-24 2011-02-24 Solar cell and method for manufacturing such a solar cell.

Publications (2)

Publication Number Publication Date
WO2012115519A2 WO2012115519A2 (fr) 2012-08-30
WO2012115519A3 true WO2012115519A3 (fr) 2012-10-26

Family

ID=45811603

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2012/050114 Ceased WO2012115519A2 (fr) 2011-02-24 2012-02-24 Cellule solaire et procédé de fabrication d'une telle cellule solaire

Country Status (2)

Country Link
NL (1) NL2006298C2 (fr)
WO (1) WO2012115519A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI568003B (zh) * 2012-12-19 2017-01-21 茂迪股份有限公司 太陽能電池及其製造方法與太陽能電池模組
CN104091857A (zh) * 2014-06-30 2014-10-08 欧贝黎新能源科技股份有限公司 一种纳米绒面多晶硅太阳能电池低压变温扩散方法
CN104078567B (zh) * 2014-07-16 2017-02-15 深圳市石金科技股份有限公司 混合太阳能电池及其制备方法、空穴输运层形成方法
TWI574425B (zh) * 2016-05-20 2017-03-11 昱晶能源科技股份有限公司 太陽能電池及其製造方法
JP2018026388A (ja) * 2016-08-08 2018-02-15 パナソニックＩｐマネジメント株式会社 太陽電池及び太陽電池の製造方法
JP6246982B1 (ja) * 2016-10-25 2017-12-13 信越化学工業株式会社 高光電変換効率太陽電池及び高光電変換効率太陽電池の製造方法
CN111081797B (zh) * 2019-12-31 2021-04-27 北京北方华创真空技术有限公司 一种单晶硅片的处理方法及其单晶硅片和太阳能电池
GB202020727D0 (en) * 2020-12-30 2021-02-10 Rec Solar Pte Ltd Solar cell
CN115274914B (zh) * 2021-04-30 2025-10-31 泰州中来光电科技有限公司 一种正面局域钝化接触电池的制备工艺及电池、组件和系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010105703A1 (fr) * 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Procédé de texturage au plasma

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1005095B1 (fr) 1997-03-21 2003-02-19 Sanyo Electric Co., Ltd. Procede de fabrication du'n element photovoltaique
WO2009120631A2 (fr) * 2008-03-25 2009-10-01 Applied Materials, Inc. Procédé de nettoyage et de texturation de surface pour cellules solaires cristallines
EP2159851A1 (fr) * 2008-09-01 2010-03-03 Université de Neuchâtel Procédé pour limiter la croissance épitaxiale dans un dispositif photoélectrique à hétérojonctions et un tel dispositif photoélctrique
NL2003390C2 (en) * 2009-08-25 2011-02-28 Stichting Energie Solar cell and method for manufacturing such a solar cell.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010105703A1 (fr) * 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Procédé de texturage au plasma

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
B.M. DAMIANI ET AL: "Development of RIE-textured silicon solar cells", CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2000 (CAT. NO.00CH37036), 1 January 2000 (2000-01-01), pages 371 - 374, XP055015422, ISBN: 978-0-78-035772-3, DOI: 10.1109/PVSC.2000.915843 *
COUSINS P J ET AL: "Minimizing lifetime degradation associated with thermal oxidation of upright randomly textured silicon surfaces", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 90, no. 2, 23 January 2006 (2006-01-23), pages 228 - 240, XP025142697, ISSN: 0927-0248, [retrieved on 20060123], DOI: 10.1016/J.SOLMAT.2005.03.008 *
MCINTOSH KEITH ET AL: "Recombination at textured silicon surfaces passivated with silicon dioxide", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 105, no. 12, 25 June 2009 (2009-06-25), pages 124520-1 - 124520-10, XP012125779, ISSN: 0021-8979, DOI: 10.1063/1.3153979 *
PARK H ET AL: "Effect of surface morphology on screen printed solar cells", CURRENT APPLIED PHYSICS, NORTH-HOLLAND, AMSTERDAM, NL, vol. 10, no. 1, 1 January 2010 (2010-01-01), pages 113 - 118, XP026546930, ISSN: 1567-1739, [retrieved on 20090520], DOI: 10.1016/J.CAP.2009.05.005 *
SALEEM H ZAIDI ET AL: "Characterization of Random Reactive Ion Etched-Textured Silicon Solar Cells", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 48, no. 6, 1 June 2001 (2001-06-01), XP011017665, ISSN: 0018-9383 *

Also Published As

Publication number Publication date
NL2006298C2 (en) 2012-08-27
WO2012115519A2 (fr) 2012-08-30

Similar Documents

Publication Publication Date Title
WO2012115519A3 (fr) Cellule solaire et procédé de fabrication d'une telle cellule solaire
SG178877A1 (en) Solar cell and method for manufacturing such a solar cell
EP2879189A3 (fr) Cellule solaire et son procédé de fabrication
EP2568511A3 (fr) Cellule solaire à émetteur sélectif et son procédé de fabrication
EP2709166A3 (fr) Structure de cellule solaire de groupe IV utilisant des hétérostructures de groupe IV ou III-V
EP2709168A3 (fr) Structure de cellule solaire de groupe IV utilisant des hétérostructures de groupe IV ou III-V
WO2011087878A3 (fr) Fabrication de cellules solaires en films minces à grande efficacité de conversion
EP2551914A3 (fr) Procédé de quantification améliorée d'ARNmi
EP2590233A3 (fr) Dispositif photovoltaïque et son procédé de fabrication
WO2013058724A3 (fr) Diode de dérivation pour cellule solaire
EP2709163A3 (fr) Structure de cellule solaire de groupe IV utilisant des hétérostructures de groupe IV ou III-V
WO2013105031A3 (fr) Procede pour realiser un module photovoltaïque avec deux etapes de gravure p2 et p3 et module photovoltaïque correspondant
EP2709167A3 (fr) Structure de cellule solaire de groupe IV utilisant des hétérostructures de groupe IV ou III-V
WO2012142007A3 (fr) Composants de chambre texturés à durée de vie allongée, et procédé de fabrication de ces composants
EP2648235A3 (fr) Procédé de fabrication d'un dispositif photoélectrique
WO2009084933A3 (fr) Photopile, procédé de fabrication de photopile, et procédé de texturation de photopile
WO2012134061A3 (fr) Cellule solaire et son procédé de fabrication
WO2014196860A3 (fr) Cellule photovoltaïque et procédé de fabrication d'une telle cellule photovoltaïque
EP2626905A3 (fr) Dispositif semi-conducteur au carbure de silicium et procédé de fabrication d'un dispositif semi-conducteur au carbure de silicium
WO2011106204A3 (fr) Cellule photovoltaïque à jonction unique
EP2709164A3 (fr) Structure de cellule solaire de groupe IV utilisant des hétérostructures de groupe IV ou III-V
PH12016502437B1 (en) Solar cell and method for producing solar cell.
EP4404282A3 (fr) Cellule solaire à hétérojonction avec isolation de bord
PH12016501667A1 (en) Solar cell with trench-free emitter regions
WO2012135395A3 (fr) Panneau arrière actif pour cellules solaires en silicium minces

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12707948

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12707948

Country of ref document: EP

Kind code of ref document: A2