NL2006298C2 - Solar cell and method for manufacturing such a solar cell. - Google Patents
Solar cell and method for manufacturing such a solar cell. Download PDFInfo
- Publication number
- NL2006298C2 NL2006298C2 NL2006298A NL2006298A NL2006298C2 NL 2006298 C2 NL2006298 C2 NL 2006298C2 NL 2006298 A NL2006298 A NL 2006298A NL 2006298 A NL2006298 A NL 2006298A NL 2006298 C2 NL2006298 C2 NL 2006298C2
- Authority
- NL
- Netherlands
- Prior art keywords
- front surface
- layer
- conductivity type
- textured
- solar cell
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000002161 passivation Methods 0.000 claims description 51
- 230000036961 partial effect Effects 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 44
- 238000009792 diffusion process Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 238000009499 grossing Methods 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 87
- 230000008569 process Effects 0.000 description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 22
- 238000005498 polishing Methods 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 16
- 239000011521 glass Substances 0.000 description 15
- 239000002019 doping agent Substances 0.000 description 14
- 239000003795 chemical substances by application Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000006798 recombination Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Inorganic materials [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000406 trisodium phosphate Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2006298A NL2006298C2 (en) | 2011-02-24 | 2011-02-24 | Solar cell and method for manufacturing such a solar cell. |
| PCT/NL2012/050114 WO2012115519A2 (fr) | 2011-02-24 | 2012-02-24 | Cellule solaire et procédé de fabrication d'une telle cellule solaire |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2006298 | 2011-02-24 | ||
| NL2006298A NL2006298C2 (en) | 2011-02-24 | 2011-02-24 | Solar cell and method for manufacturing such a solar cell. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2006298C2 true NL2006298C2 (en) | 2012-08-27 |
Family
ID=45811603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2006298A NL2006298C2 (en) | 2011-02-24 | 2011-02-24 | Solar cell and method for manufacturing such a solar cell. |
Country Status (2)
| Country | Link |
|---|---|
| NL (1) | NL2006298C2 (fr) |
| WO (1) | WO2012115519A2 (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI568003B (zh) * | 2012-12-19 | 2017-01-21 | 茂迪股份有限公司 | 太陽能電池及其製造方法與太陽能電池模組 |
| CN104091857A (zh) * | 2014-06-30 | 2014-10-08 | 欧贝黎新能源科技股份有限公司 | 一种纳米绒面多晶硅太阳能电池低压变温扩散方法 |
| CN104078567B (zh) * | 2014-07-16 | 2017-02-15 | 深圳市石金科技股份有限公司 | 混合太阳能电池及其制备方法、空穴输运层形成方法 |
| TWI574425B (zh) * | 2016-05-20 | 2017-03-11 | 昱晶能源科技股份有限公司 | 太陽能電池及其製造方法 |
| JP2018026388A (ja) * | 2016-08-08 | 2018-02-15 | パナソニックＩｐマネジメント株式会社 | 太陽電池及び太陽電池の製造方法 |
| JP6246982B1 (ja) * | 2016-10-25 | 2017-12-13 | 信越化学工業株式会社 | 高光電変換効率太陽電池及び高光電変換効率太陽電池の製造方法 |
| CN111081797B (zh) * | 2019-12-31 | 2021-04-27 | 北京北方华创真空技术有限公司 | 一种单晶硅片的处理方法及其单晶硅片和太阳能电池 |
| GB202020727D0 (en) * | 2020-12-30 | 2021-02-10 | Rec Solar Pte Ltd | Solar cell |
| CN115274914B (zh) * | 2021-04-30 | 2025-10-31 | 泰州中来光电科技有限公司 | 一种正面局域钝化接触电池的制备工艺及电池、组件和系统 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009120631A2 (fr) * | 2008-03-25 | 2009-10-01 | Applied Materials, Inc. | Procédé de nettoyage et de texturation de surface pour cellules solaires cristallines |
| WO2010023318A1 (fr) * | 2008-09-01 | 2010-03-04 | Université De Neuchâtel | Procede pour limiter la croissance epitaxiale dans un dispositif photoelectrique a heterojonctions et un tel dispositif photoelectrique |
| WO2010105703A1 (fr) * | 2009-03-17 | 2010-09-23 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Procédé de texturage au plasma |
| WO2011025371A1 (fr) * | 2009-08-25 | 2011-03-03 | Stichting Energieonderzoek Centrum Nederland | Cellule solaire et son procédé de fabrication |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1005095B1 (fr) | 1997-03-21 | 2003-02-19 | Sanyo Electric Co., Ltd. | Procede de fabrication du'n element photovoltaique |
-
2011
- 2011-02-24 NL NL2006298A patent/NL2006298C2/en not_active IP Right Cessation
-
2012
- 2012-02-24 WO PCT/NL2012/050114 patent/WO2012115519A2/fr not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009120631A2 (fr) * | 2008-03-25 | 2009-10-01 | Applied Materials, Inc. | Procédé de nettoyage et de texturation de surface pour cellules solaires cristallines |
| WO2010023318A1 (fr) * | 2008-09-01 | 2010-03-04 | Université De Neuchâtel | Procede pour limiter la croissance epitaxiale dans un dispositif photoelectrique a heterojonctions et un tel dispositif photoelectrique |
| WO2010105703A1 (fr) * | 2009-03-17 | 2010-09-23 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Procédé de texturage au plasma |
| WO2011025371A1 (fr) * | 2009-08-25 | 2011-03-03 | Stichting Energieonderzoek Centrum Nederland | Cellule solaire et son procédé de fabrication |
Non-Patent Citations (3)
| Title |
|---|
| B.M. DAMIANI ET AL: "Development of RIE-textured silicon solar cells", CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2000 (CAT. NO.00CH37036), 1 January 2000 (2000-01-01), pages 371 - 374, XP055015422, ISBN: 978-0-78-035772-3, DOI: 10.1109/PVSC.2000.915843 * |
| COUSINS P J ET AL: "Minimizing lifetime degradation associated with thermal oxidation of upright randomly textured silicon surfaces", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 90, no. 2, 23 January 2006 (2006-01-23), pages 228 - 240, XP025142697, ISSN: 0927-0248, [retrieved on 20060123], DOI: 10.1016/J.SOLMAT.2005.03.008 * |
| MCINTOSH KEITH ET AL: "Recombination at textured silicon surfaces passivated with silicon dioxide", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 105, no. 12, 25 June 2009 (2009-06-25), pages 124520-1 - 124520-10, XP012125779, ISSN: 0021-8979, DOI: 10.1063/1.3153979 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012115519A2 (fr) | 2012-08-30 |
| WO2012115519A3 (fr) | 2012-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20140901 |