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WO2012115519A3 - Solar cell and method for manufacturing such a solar cell - Google Patents

Solar cell and method for manufacturing such a solar cell Download PDF

Info

Publication number
WO2012115519A3
WO2012115519A3 PCT/NL2012/050114 NL2012050114W WO2012115519A3 WO 2012115519 A3 WO2012115519 A3 WO 2012115519A3 NL 2012050114 W NL2012050114 W NL 2012050114W WO 2012115519 A3 WO2012115519 A3 WO 2012115519A3
Authority
WO
WIPO (PCT)
Prior art keywords
front surface
conductivity type
solar cell
layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/NL2012/050114
Other languages
French (fr)
Other versions
WO2012115519A2 (en
Inventor
Lambert Johan Geerligs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Research Centre of the Netherlands
Original Assignee
Energy Research Centre of the Netherlands
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Research Centre of the Netherlands filed Critical Energy Research Centre of the Netherlands
Publication of WO2012115519A2 publication Critical patent/WO2012115519A2/en
Publication of WO2012115519A3 publication Critical patent/WO2012115519A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A method of manufacturing a solar cell from a semiconductor substrate, the semiconductor substrate having a front surface and a back surface, the method comprising: - texturing the front surface to create a textured front surface; - partly smoothening the textured front surface; - creating a layer of a first conductivity type in the semiconductor substrate adjacent the textured and smoothened front surface, by diffusion of a dopant of the first conductivity type into the textured front surface - creating a passivation layer on the front surface by deposition or wet- chemical processing after creating said layer of the first conductivity type; - depositing an electrode system on the back surface without prior diffusion of a layer of a second conductivity type in the semiconductor substrate adjacent the back surface or at most diffusion of such a layer of the second conductivity type selectively on the back side only.
PCT/NL2012/050114 2011-02-24 2012-02-24 Solar cell and method for manufacturing such a solar cell Ceased WO2012115519A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2006298 2011-02-24
NL2006298A NL2006298C2 (en) 2011-02-24 2011-02-24 Solar cell and method for manufacturing such a solar cell.

Publications (2)

Publication Number Publication Date
WO2012115519A2 WO2012115519A2 (en) 2012-08-30
WO2012115519A3 true WO2012115519A3 (en) 2012-10-26

Family

ID=45811603

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2012/050114 Ceased WO2012115519A2 (en) 2011-02-24 2012-02-24 Solar cell and method for manufacturing such a solar cell

Country Status (2)

Country Link
NL (1) NL2006298C2 (en)
WO (1) WO2012115519A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI568003B (en) * 2012-12-19 2017-01-21 茂迪股份有限公司 Solar battery, manufacturing method thereof and solar battery module
CN104091857A (en) * 2014-06-30 2014-10-08 欧贝黎新能源科技股份有限公司 Low-pressure variable-temperature diffusion method of nanometer textured polycrystalline silicon solar cell
CN104078567B (en) * 2014-07-16 2017-02-15 深圳市石金科技股份有限公司 Organic and inorganic mixed solar battery and manufacturing method and hole-transporting-layer forming method of organic and inorganic mixed solar battery
TWI574425B (en) * 2016-05-20 2017-03-11 昱晶能源科技股份有限公司 Solar cell and manufacturing method thereof
JP2018026388A (en) * 2016-08-08 2018-02-15 パナソニックＩｐマネジメント株式会社 Solar battery and method for manufacturing the same
US20190305149A1 (en) * 2016-10-25 2019-10-03 Shin-Etsu Chemical Co., Ltd. Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency
CN111081797B (en) * 2019-12-31 2021-04-27 北京北方华创真空技术有限公司 A kind of processing method of single crystal silicon wafer, its single crystal silicon wafer and solar cell
GB202020727D0 (en) * 2020-12-30 2021-02-10 Rec Solar Pte Ltd Solar cell
CN115274914B (en) * 2021-04-30 2025-10-31 泰州中来光电科技有限公司 Preparation process of front-side local passivation contact battery, assembly and system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010105703A1 (en) * 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Method for plasma texturing

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207890B1 (en) 1997-03-21 2001-03-27 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
TW201001508A (en) * 2008-03-25 2010-01-01 Applied Materials Inc Surface cleaning and texturing process for crystalline solar cells
EP2159851A1 (en) * 2008-09-01 2010-03-03 Université de Neuchâtel Method for limiting epitaxial growth in a photoelectric device with heterojunctions and such a photoelectric device
NL2003390C2 (en) * 2009-08-25 2011-02-28 Stichting Energie Solar cell and method for manufacturing such a solar cell.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010105703A1 (en) * 2009-03-17 2010-09-23 Interuniversitair Microelektronica Centrum Vzw (Imec) Method for plasma texturing

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
B.M. DAMIANI ET AL: "Development of RIE-textured silicon solar cells", CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2000 (CAT. NO.00CH37036), 1 January 2000 (2000-01-01), pages 371 - 374, XP055015422, ISBN: 978-0-78-035772-3, DOI: 10.1109/PVSC.2000.915843 *
COUSINS P J ET AL: "Minimizing lifetime degradation associated with thermal oxidation of upright randomly textured silicon surfaces", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 90, no. 2, 23 January 2006 (2006-01-23), pages 228 - 240, XP025142697, ISSN: 0927-0248, [retrieved on 20060123], DOI: 10.1016/J.SOLMAT.2005.03.008 *
MCINTOSH KEITH ET AL: "Recombination at textured silicon surfaces passivated with silicon dioxide", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 105, no. 12, 25 June 2009 (2009-06-25), pages 124520-1 - 124520-10, XP012125779, ISSN: 0021-8979, DOI: 10.1063/1.3153979 *
PARK H ET AL: "Effect of surface morphology on screen printed solar cells", CURRENT APPLIED PHYSICS, NORTH-HOLLAND, AMSTERDAM, NL, vol. 10, no. 1, 1 January 2010 (2010-01-01), pages 113 - 118, XP026546930, ISSN: 1567-1739, [retrieved on 20090520], DOI: 10.1016/J.CAP.2009.05.005 *
SALEEM H ZAIDI ET AL: "Characterization of Random Reactive Ion Etched-Textured Silicon Solar Cells", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 48, no. 6, 1 June 2001 (2001-06-01), XP011017665, ISSN: 0018-9383 *

Also Published As

Publication number Publication date
NL2006298C2 (en) 2012-08-27
WO2012115519A2 (en) 2012-08-30

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