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WO2009034953A1 - 薄膜トランジスタ - Google Patents

薄膜トランジスタ Download PDF

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Publication number
WO2009034953A1
WO2009034953A1 PCT/JP2008/066198 JP2008066198W WO2009034953A1 WO 2009034953 A1 WO2009034953 A1 WO 2009034953A1 JP 2008066198 W JP2008066198 W JP 2008066198W WO 2009034953 A1 WO2009034953 A1 WO 2009034953A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
layer
layers
disclosed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066198
Other languages
English (en)
French (fr)
Inventor
Koki Yano
Kazuyoshi Inoue
Shigekazu Tomai
Masashi Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to JP2009532177A priority Critical patent/JPWO2009034953A1/ja
Publication of WO2009034953A1 publication Critical patent/WO2009034953A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

　結晶質層及び非晶質層を積層してなる酸化物半導体膜を含む薄膜トランジスタ。
PCT/JP2008/066198 2007-09-10 2008-09-09 薄膜トランジスタ Ceased WO2009034953A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009532177A JPWO2009034953A1 (ja) 2007-09-10 2008-09-09 薄膜トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007233942 2007-09-10
JP2007-233942 2007-09-10

Publications (1)

Publication Number Publication Date
WO2009034953A1 true WO2009034953A1 (ja) 2009-03-19

Family

ID=40451960

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066198 Ceased WO2009034953A1 (ja) 2007-09-10 2008-09-09 薄膜トランジスタ

Country Status (3)

Country Link
JP (1) JPWO2009034953A1 (ja)
TW (1) TWI453915B (ja)
WO (1) WO2009034953A1 (ja)

Cited By (131)

* Cited by examiner, † Cited by third party
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WO2010131310A1 (ja) * 2009-05-13 2010-11-18 パナソニック株式会社 半導体メモリセルおよびその製造方法
JP2011023695A (ja) * 2009-07-15 2011-02-03 Samsung Mobile Display Co Ltd 有機電界発光表示装置及びその製造方法
JP2011029635A (ja) * 2009-07-03 2011-02-10 Semiconductor Energy Lab Co Ltd トランジスタを有する表示装置の作製方法
JP2011029628A (ja) * 2009-06-30 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2011049539A (ja) * 2009-07-31 2011-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2011049549A (ja) * 2009-07-31 2011-03-10 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2011066070A (ja) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd 多結晶薄膜、その成膜方法、及び薄膜トランジスタ
JP2011077510A (ja) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd トランジスタ及び表示装置
JP2011086923A (ja) * 2009-09-16 2011-04-28 Semiconductor Energy Lab Co Ltd トランジスタ及び表示装置
JP2011091375A (ja) * 2009-09-24 2011-05-06 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
JP2011100979A (ja) * 2009-10-08 2011-05-19 Semiconductor Energy Lab Co Ltd 酸化物半導体膜、および半導体装置
JP2011103452A (ja) * 2009-10-14 2011-05-26 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2011109032A (ja) * 2009-11-20 2011-06-02 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
WO2011065329A1 (ja) * 2009-11-27 2011-06-03 株式会社日立製作所 酸化物半導体装置およびその製造方法
WO2011065216A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
JP2011119718A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
WO2011070900A1 (en) * 2009-12-08 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011123986A (ja) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
WO2011074506A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011129895A (ja) * 2009-11-20 2011-06-30 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2011081009A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011139054A (ja) * 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2011146713A (ja) * 2010-01-15 2011-07-28 Samsung Electronics Co Ltd 表示基板
JP2011181802A (ja) * 2010-03-03 2011-09-15 Fujifilm Corp Ｉｇｚｏ系アモルファス酸化物半導体膜の製造方法及びそれを用いた電界効果型トランジスタの製造方法
CN102194887A (zh) * 2010-03-04 2011-09-21 索尼公司 薄膜晶体管、薄膜晶体管的制造方法以及显示装置
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2011237418A (ja) * 2010-04-16 2011-11-24 Semiconductor Energy Lab Co Ltd 電流測定方法、半導体装置の検査方法、半導体装置、および特性評価用回路
JP2011248356A (ja) * 2010-04-28 2011-12-08 Semiconductor Energy Lab Co Ltd 半導体表示装置及びその駆動方法
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
JP2012015491A (ja) * 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2012084863A (ja) * 2010-09-13 2012-04-26 Semiconductor Energy Lab Co Ltd 結晶性酸化物半導体膜の作製方法
JP2012099661A (ja) * 2010-11-02 2012-05-24 Idemitsu Kosan Co Ltd 酸化物半導体の製造方法
WO2012074046A1 (ja) * 2010-12-02 2012-06-07 株式会社神戸製鋼所 配線構造およびスパッタリングターゲット
WO2012144557A1 (ja) * 2011-04-22 2012-10-26 株式会社神戸製鋼所 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
KR20120120062A (ko) * 2011-04-22 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치의 제작 방법
KR20120125272A (ko) * 2010-01-15 2012-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120127250A (ko) * 2011-05-11 2012-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2012248868A (ja) * 2009-11-28 2012-12-13 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012256824A (ja) * 2010-10-29 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
JPWO2011043300A1 (ja) * 2009-10-09 2013-03-04 シャープ株式会社 半導体装置およびその製造方法
JP2013047849A (ja) * 2009-09-04 2013-03-07 Semiconductor Energy Lab Co Ltd 半導体装置
KR20130033308A (ko) * 2011-09-26 2013-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2013131765A (ja) * 2009-10-08 2013-07-04 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2013149965A (ja) * 2011-12-23 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置
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CN103489881A (zh) * 2011-12-31 2014-01-01 京东方科技集团股份有限公司 一种薄膜晶体管阵列基板及其制造方法和显示器件
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JP2014013917A (ja) * 2012-06-06 2014-01-23 Kobe Steel Ltd 薄膜トランジスタ
WO2014025002A1 (en) * 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP2014029994A (ja) * 2012-06-27 2014-02-13 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
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JP2014078704A (ja) * 2012-09-24 2014-05-01 Semiconductor Energy Lab Co Ltd 表示装置
KR101396102B1 (ko) * 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101400919B1 (ko) 2010-01-26 2014-05-30 주성엔지니어링(주) 박막 트랜지스터 및 그 제조 방법
JP2015015488A (ja) * 2009-10-30 2015-01-22 株式会社半導体エネルギー研究所 半導体装置
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