[go: up one dir, main page]

WO2009031399A1 - 透明導電膜および透明導電膜の製造方法 - Google Patents

透明導電膜および透明導電膜の製造方法 Download PDF

Info

Publication number
WO2009031399A1
WO2009031399A1 PCT/JP2008/064708 JP2008064708W WO2009031399A1 WO 2009031399 A1 WO2009031399 A1 WO 2009031399A1 JP 2008064708 W JP2008064708 W JP 2008064708W WO 2009031399 A1 WO2009031399 A1 WO 2009031399A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent conductive
zno
conductive film
film
group iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064708
Other languages
English (en)
French (fr)
Inventor
Souko Fukahori
Yutaka Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2009504162A priority Critical patent/JP5040991B2/ja
Priority to EP08826879.2A priority patent/EP2071586A4/en
Publication of WO2009031399A1 publication Critical patent/WO2009031399A1/ja
Priority to US12/500,694 priority patent/US20090269588A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31507—Of polycarbonate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31786—Of polyester [e.g., alkyd, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Conductive Materials (AREA)

Abstract

　実用可能な耐湿性と、透明導電膜として必要な特性を備え、かつ、経済性に優れた、ＺｎＯ系の透明導電膜およびその製造方法を提供する。 　ＺｎＯを主たる成分とする透明導電膜（ＺｎＯ膜）において、ＺｎＯ膜が粒状結晶構造を有する領域を備えた構成とする。 　ＺｎＯ膜に、III族元素をドーピングする。また、III族元素のドープ量を、酸化物質量換算で０．８～１１．５重量％とする。また、III族元素を、Ｇａ，Ａｌ，およびＩｎからなる群より選ばれる少なくとも１種とする。 　ＺｎＯ（００２）ロッキングカーブの半値幅を１０．５°以下とする。 　基体上にＺｎＯ膜が成膜される間、基体を静止させておく。 　ターゲットに、ＤＣパルス電力を供給しながら酸化亜鉛膜の成膜を行う。
PCT/JP2008/064708 2007-09-05 2008-08-18 透明導電膜および透明導電膜の製造方法 Ceased WO2009031399A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009504162A JP5040991B2 (ja) 2007-09-05 2008-08-18 透明導電膜および透明導電膜の製造方法
EP08826879.2A EP2071586A4 (en) 2007-09-05 2008-08-18 TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING A TRANSPARENT CONDUCTIVE FILM
US12/500,694 US20090269588A1 (en) 2007-09-05 2009-07-10 Transparent conductive film and method of producing transparent conductive film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007230347 2007-09-05
JP2007-230347 2007-09-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/500,694 Continuation US20090269588A1 (en) 2007-09-05 2009-07-10 Transparent conductive film and method of producing transparent conductive film

Publications (1)

Publication Number Publication Date
WO2009031399A1 true WO2009031399A1 (ja) 2009-03-12

Family

ID=40428720

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064708 Ceased WO2009031399A1 (ja) 2007-09-05 2008-08-18 透明導電膜および透明導電膜の製造方法

Country Status (7)

Country Link
US (1) US20090269588A1 (ja)
EP (1) EP2071586A4 (ja)
JP (1) JP5040991B2 (ja)
KR (1) KR101041655B1 (ja)
CN (1) CN101548343A (ja)
TW (1) TWI453766B (ja)
WO (1) WO2009031399A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015535892A (ja) * 2012-10-08 2015-12-17 コーニング インコーポレイテッド 導電性透明アルミニウムドープ酸化亜鉛スパッタ膜
CN109835032A (zh) * 2017-11-28 2019-06-04 日本瑞翁株式会社 导电膜用多层膜和导电膜

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101093424B1 (ko) 2009-11-10 2011-12-14 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
JP5630747B2 (ja) * 2010-05-14 2014-11-26 リンテック株式会社 酸化亜鉛系導電性積層体及びその製造方法並びに電子デバイス
JP5533448B2 (ja) * 2010-08-30 2014-06-25 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
JP2012144384A (ja) * 2011-01-07 2012-08-02 Tokyo Institute Of Technology 導電性酸化亜鉛膜の製造方法
KR101178496B1 (ko) * 2011-09-28 2012-09-07 한국에너지기술연구원 이중구조의 투명전도막 및 그 제조방법
TW201422835A (zh) * 2012-12-03 2014-06-16 Solar Applied Mat Tech Corp 濺鍍靶材及導電金屬氧化物薄膜
JP6521390B2 (ja) * 2014-09-04 2019-05-29 日本碍子株式会社 酸化亜鉛焼結体及びその製造方法
CN114361267B (zh) * 2021-12-13 2024-08-09 中国科学院上海微系统与信息技术研究所 一种shj太阳电池双层tco薄膜结构及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62122011A (ja) * 1985-11-22 1987-06-03 株式会社リコー 透明導電膜の製造方法
JPH06187833A (ja) * 1992-09-11 1994-07-08 Asahi Glass Co Ltd 透明導電膜
JPH07249316A (ja) * 1994-03-10 1995-09-26 Asahi Glass Co Ltd 透明導電膜および該透明導電膜を用いた透明基体
JP2002114598A (ja) * 2000-10-03 2002-04-16 Toppan Printing Co Ltd 透明導電性材料およびその製造方法
JP2004296616A (ja) * 2003-03-26 2004-10-21 Canon Inc 光起電力素子

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471721A (en) * 1966-10-25 1969-10-07 Minnesota Mining & Mfg Zinc oxide maximum efficiency length extensional crystals and devices
US3846649A (en) * 1973-06-18 1974-11-05 Rca Corp Piezoelectric transducer comprising oriented zinc oxide film and method of manufacture
NL7908501A (nl) * 1979-11-22 1981-06-16 Philips Nv Lichamen samengesteld uit ten minste twee delen, verbindingsglas en werkwijze voor het aan elkaar hechten van delen.
EP0578046B1 (en) * 1992-07-10 1996-11-06 Asahi Glass Company Ltd. Transparent conductive film, and target and material for vapor deposition to be used for its production
JPH06248427A (ja) * 1993-02-26 1994-09-06 Asahi Glass Co Ltd 真空蒸着用原料
US5804466A (en) * 1996-03-06 1998-09-08 Canon Kabushiki Kaisha Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film
JP4663829B2 (ja) * 1998-03-31 2011-04-06 三菱電機株式会社 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP2000276943A (ja) * 1999-03-26 2000-10-06 Tohoku Ricoh Co Ltd 透明導電膜
WO2001056927A1 (fr) * 2000-02-04 2001-08-09 Otsuka Chemical Co., Ltd. Compose lamellaire hexagonal a base d'oxyde d'indium-zinc et son procede de production
US7118936B2 (en) * 2001-10-11 2006-10-10 Bridgestone Corporation Organic dye-sensitized metal oxide semiconductor electrode and its manufacturing method, and organic dye-sensitized solar cell
JP3749498B2 (ja) * 2002-03-26 2006-03-01 スタンレー電気株式会社 結晶成長用基板およびＺｎＯ系化合物半導体デバイス
JP4277506B2 (ja) * 2002-10-24 2009-06-10 株式会社村田製作所 熱電変換素子の熱電材料用のＺｎＯ系薄膜、該ＺｎＯ系薄膜を用いた熱電変換素子、及び赤外線センサ
KR100968560B1 (ko) * 2003-01-07 2010-07-08 삼성전자주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의금속배선 형성방법
CN1278385C (zh) * 2003-03-25 2006-10-04 浙江大学 一种p－ZnO薄膜及其制备方法
US6946928B2 (en) * 2003-10-30 2005-09-20 Agilent Technologies, Inc. Thin-film acoustically-coupled transformer
CN100543943C (zh) * 2005-12-22 2009-09-23 三井金属矿业株式会社 氧化锌系透明导电膜的图案化的方法
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
CN101542639B (zh) * 2007-02-26 2013-07-31 株式会社村田制作所 导电膜及导电膜的制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62122011A (ja) * 1985-11-22 1987-06-03 株式会社リコー 透明導電膜の製造方法
JPH06187833A (ja) * 1992-09-11 1994-07-08 Asahi Glass Co Ltd 透明導電膜
JPH07249316A (ja) * 1994-03-10 1995-09-26 Asahi Glass Co Ltd 透明導電膜および該透明導電膜を用いた透明基体
JP2002114598A (ja) * 2000-10-03 2002-04-16 Toppan Printing Co Ltd 透明導電性材料およびその製造方法
JP2004296616A (ja) * 2003-03-26 2004-10-21 Canon Inc 光起電力素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015535892A (ja) * 2012-10-08 2015-12-17 コーニング インコーポレイテッド 導電性透明アルミニウムドープ酸化亜鉛スパッタ膜
CN109835032A (zh) * 2017-11-28 2019-06-04 日本瑞翁株式会社 导电膜用多层膜和导电膜

Also Published As

Publication number Publication date
JPWO2009031399A1 (ja) 2010-12-09
JP5040991B2 (ja) 2012-10-03
KR101041655B1 (ko) 2011-06-14
TWI453766B (zh) 2014-09-21
TW200929268A (en) 2009-07-01
CN101548343A (zh) 2009-09-30
KR20090094067A (ko) 2009-09-03
US20090269588A1 (en) 2009-10-29
EP2071586A4 (en) 2014-03-05
EP2071586A1 (en) 2009-06-17

Similar Documents

Publication Publication Date Title
WO2009031399A1 (ja) 透明導電膜および透明導電膜の製造方法
EP1215310A4 (en) P-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND PROCESS FOR PREPARING THE SAME
WO2008153121A1 (ja) ＺｎＯ系薄膜及びＺｎＯ系半導体素子
RU2012131143A (ru) Кремниевый тонкопленочный солнечный элемент, имеющий усовершенствованное подстилающее покрытие
EP2337083A3 (en) Cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
TW200617998A (en) Transparentconductive film, process for producing the same, transparent conductive substrate and light-emitting device
EP1553637A3 (en) Photovoltaic device
WO2009044893A1 (ja) 酸化インジウム系透明導電膜及びその製造方法
WO2011087811A3 (en) Electroactive composition and electronic device made with the composition
TW200802423A (en) Crystalline transparent conductive thin film, method of producing the same, transparent conductive film, and touch panel
WO2008127449A3 (en) Doping techniques for group ibiiiavia compound layers
WO2009069582A1 (ja) Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法
MY169596A (en) Photovoltaic devices including doped semiconductor films
WO2008037658A3 (fr) Procede de realisation de cellule photovoltaique a heterojonction en face arriere
WO2008066118A9 (ja) 薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法
Long et al. Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode
WO2008081811A1 (ja) プラスティッククリスタル
WO2008108128A1 (ja) 誘電体、誘電体を用いたキャパシタ、誘電体を用いた半導体装置、及び誘電体の製造方法
WO2010041242A3 (en) Oxidized thiophospholipid compounds and uses thereof
WO2009041529A1 (ja) 反射膜、反射膜積層体、ｌｅｄ、有機ｅｌディスプレイ及び有機ｅｌ照明器具
WO2011008926A3 (en) Zinc oxide sulfur sensor
TW200746454A (en) Semiconductor light-emitting device and fabricating method of the same
WO2008054840A3 (en) Compositions of doped, co-doped and tri-doped semiconductor materials
WO2011034812A3 (en) Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
WO2009038091A1 (ja) 太陽電池の製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880000889.6

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 2009504162

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2008826879

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020097006617

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08826879

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE