[go: up one dir, main page]

WO2008037658A3 - Procede de realisation de cellule photovoltaique a heterojonction en face arriere - Google Patents

Procede de realisation de cellule photovoltaique a heterojonction en face arriere Download PDF

Info

Publication number
WO2008037658A3
WO2008037658A3 PCT/EP2007/060016 EP2007060016W WO2008037658A3 WO 2008037658 A3 WO2008037658 A3 WO 2008037658A3 EP 2007060016 W EP2007060016 W EP 2007060016W WO 2008037658 A3 WO2008037658 A3 WO 2008037658A3
Authority
WO
WIPO (PCT)
Prior art keywords
producing
rear face
photovoltaic cell
aperture
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2007/060016
Other languages
English (en)
Other versions
WO2008037658A2 (fr
Inventor
Yannick Veschetti
Bruno Remiat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to JP2009528733A priority Critical patent/JP2010504636A/ja
Priority to EP07803574A priority patent/EP2067174A2/fr
Priority to US12/442,853 priority patent/US7972894B2/en
Publication of WO2008037658A2 publication Critical patent/WO2008037658A2/fr
Publication of WO2008037658A3 publication Critical patent/WO2008037658A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de réalisation de cellule photovoltaïque (100), comportant au moins les étapes de : a) dépôt d'une couche de passivation (12) à base de semi-conducteur amorphe intrinsèque sur une face arrière d'un substrat (2) à base de semi- conducteur cristallin, b) réalisation par sérigraphie sur la couche de passivation, à une température inférieure ou égale à 250°C, d'un premier masque sacrificiel comportant au moins une ouverture traversante, c) dépôt d'une couche (20) de semi-conducteur amorphe dopé d'un premier type de conductivité au moins dans l'ouverture, d) suppression du premier masque sacrificiel, laissant subsister, au niveau de l'ouverture du premier masque sacrificiel, au moins un plot (20) de semi-conducteur amorphe dopé du premier type de conductivité.
PCT/EP2007/060016 2006-09-26 2007-09-21 Procede de realisation de cellule photovoltaique a heterojonction en face arriere Ceased WO2008037658A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009528733A JP2010504636A (ja) 2006-09-26 2007-09-21 背面ヘテロ接合太陽電池製造方法
EP07803574A EP2067174A2 (fr) 2006-09-26 2007-09-21 Procede de realisation de cellule photovoltaique a heterojonction en face arriere
US12/442,853 US7972894B2 (en) 2006-09-26 2007-09-21 Method of producing a photovoltaic cell with a heterojunction on the rear face

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0653943A FR2906406B1 (fr) 2006-09-26 2006-09-26 Procede de realisation de cellule photovoltaique a heterojonction en face arriere.
FR0653943 2006-09-26

Publications (2)

Publication Number Publication Date
WO2008037658A2 WO2008037658A2 (fr) 2008-04-03
WO2008037658A3 true WO2008037658A3 (fr) 2008-05-22

Family

ID=37963592

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/060016 Ceased WO2008037658A2 (fr) 2006-09-26 2007-09-21 Procede de realisation de cellule photovoltaique a heterojonction en face arriere

Country Status (5)

Country Link
US (1) US7972894B2 (fr)
EP (1) EP2067174A2 (fr)
JP (1) JP2010504636A (fr)
FR (1) FR2906406B1 (fr)
WO (1) WO2008037658A2 (fr)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
KR101539047B1 (ko) 2008-12-24 2015-07-23 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광기전력 변환 소자 및 그의 제조방법
KR101142861B1 (ko) * 2009-02-04 2012-05-08 엘지전자 주식회사 태양 전지 및 그 제조 방법
US7927910B2 (en) * 2009-06-28 2011-04-19 Sino-American Silicon Products Inc. Manufacturing method of solar cell
KR101146736B1 (ko) * 2009-09-14 2012-05-17 엘지전자 주식회사 태양 전지
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
KR20110071375A (ko) * 2009-12-21 2011-06-29 현대중공업 주식회사 후면전계형 이종접합 태양전지 및 그 제조방법
US8524524B2 (en) 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US20120012170A1 (en) * 2010-07-19 2012-01-19 Institutt For Energiteknikk Processed silicon wafer, silicon chip, and method and apparatus for production thereof
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
WO2012132616A1 (fr) * 2011-03-25 2012-10-04 三洋電機株式会社 Procédé de fabrication d'un élément de conversion photoélectrique
JPWO2012132766A1 (ja) * 2011-03-28 2014-07-28 三洋電機株式会社 光電変換装置及び光電変換装置の製造方法
JP5842173B2 (ja) * 2011-03-28 2016-01-13 パナソニックＩｐマネジメント株式会社 光電変換装置及び光電変換装置の製造方法
GB2491209B (en) * 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
CN102214719B (zh) * 2011-06-10 2013-05-01 山东力诺太阳能电力股份有限公司 基于n型硅片的背接触异质结太阳电池
WO2013038768A1 (fr) * 2011-09-12 2013-03-21 三洋電機株式会社 Cellule solaire et son procédé de fabrication
KR20130050721A (ko) 2011-11-08 2013-05-16 삼성에스디아이 주식회사 태양 전지
US20130146136A1 (en) * 2011-12-13 2013-06-13 Kyoung-Jin Seo Photovoltaic device and method of manufacturing the same
JP2013125890A (ja) * 2011-12-15 2013-06-24 Sharp Corp 光電変換素子およびその製造方法
US20130157409A1 (en) * 2011-12-16 2013-06-20 Kaushik Vaidya Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices
KR101948206B1 (ko) * 2012-03-02 2019-02-14 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지와, 이의 제조 방법
JP6032911B2 (ja) * 2012-03-23 2016-11-30 シャープ株式会社 光電変換素子およびその製造方法
JP5774204B2 (ja) * 2012-03-29 2015-09-09 三菱電機株式会社 光起電力素子およびその製造方法、太陽電池モジュール
CN104137269B (zh) * 2012-05-14 2016-12-28 三菱电机株式会社 光电变换装置及其制造方法、光电变换模块
JP6103867B2 (ja) * 2012-09-12 2017-03-29 シャープ株式会社 光電変換素子および光電変換素子の製造方法
JP2014072209A (ja) * 2012-09-27 2014-04-21 Sharp Corp 光電変換素子および光電変換素子の製造方法
EP2904643B1 (fr) 2012-10-04 2018-12-05 SolarCity Corporation Cellule solaire comportant une grille métallique électroplaquée
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
JP2014158017A (ja) * 2013-01-16 2014-08-28 Sharp Corp 光電変換素子および光電変換素子の製造方法
JP2014183073A (ja) * 2013-03-18 2014-09-29 Sharp Corp 光電変換素子および光電変換素子の製造方法
WO2014157525A1 (fr) * 2013-03-28 2014-10-02 シャープ株式会社 Élément de conversion photoélectrique
WO2014162979A1 (fr) * 2013-04-01 2014-10-09 シャープ株式会社 Dispositif de conversion photoélectrique
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
KR102045001B1 (ko) * 2013-06-05 2019-12-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
WO2015122257A1 (fr) * 2014-02-13 2015-08-20 シャープ株式会社 Élément de conversion photoélectrique
US20150270421A1 (en) * 2014-03-20 2015-09-24 Varian Semiconductor Equipment Associates, Inc. Advanced Back Contact Solar Cells
WO2015189878A1 (fr) * 2014-06-13 2015-12-17 国立大学法人福島大学 Cellule solaire et son procédé de fabrication
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
JP2017520920A (ja) * 2014-07-17 2017-07-27 ソーラーシティ コーポレーション 交差指型背面接触を有する太陽電池
WO2016072415A1 (fr) * 2014-11-07 2016-05-12 シャープ株式会社 Élément de conversion photoélectrique
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
WO2016147565A1 (fr) * 2015-03-16 2016-09-22 パナソニックＩｐマネジメント株式会社 Cellule de batterie solaire
KR101689471B1 (ko) * 2015-06-15 2016-12-26 한양대학교 산학협력단 금속 칼코겐 화합물 박막 및 그 제조 방법
DE102015112046A1 (de) * 2015-07-23 2017-01-26 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Herstellung einseitig angeordneter strukturierter Kontakte in einer Schichtanordnung für ein photovoltaisches Bauelement
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
CN105449042A (zh) * 2015-12-29 2016-03-30 浙江晶科能源有限公司 钝化发射极背表面电池的制备方法
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
JP7053892B2 (ja) * 2018-12-27 2022-04-12 株式会社カネカ 太陽電池の製造方法
JP7274899B2 (ja) * 2019-03-22 2023-05-17 株式会社カネカ 太陽電池の製造方法
KR102365141B1 (ko) * 2019-09-17 2022-02-21 울산과학기술원 공극을 포함하는 투명 태양전지 및 이의 제조방법
JP7458834B2 (ja) * 2020-03-12 2024-04-01 株式会社カネカ 太陽電池および太陽電池の製造方法
CN114038921B (zh) 2021-11-05 2024-03-29 晶科能源(海宁)有限公司 太阳能电池及光伏组件
CN114883424B (zh) * 2022-05-25 2023-11-21 中国科学院电工研究所 一种基于丝网印刷制备全背接触晶硅异质结太阳电池结构的方法
CN119730436A (zh) * 2023-09-25 2025-03-28 帝尔激光科技(无锡)有限公司 一种背接触式太阳能电池及其制备方法
CN117936652B (zh) * 2024-03-14 2024-07-23 金阳(泉州)新能源科技有限公司 一种背膜连镀的背接触电池的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134090A (en) * 1982-06-18 1992-07-28 At&T Bell Laboratories Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
US6500731B1 (en) * 1999-09-22 2002-12-31 Canon Kabushiki Kaisha Process for producing semiconductor device module
WO2003083955A1 (fr) * 2002-03-29 2003-10-09 Ebara Corporation Element photovoltaique et procede de fabrication

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292485A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 太陽電池の製造方法
US4927770A (en) 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5053083A (en) 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
JPH06204532A (ja) * 1992-12-28 1994-07-22 Canon Inc 太陽電池のグリッド電極の製造方法
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
JP4169463B2 (ja) * 2000-08-29 2008-10-22 三洋電機株式会社 光起電力素子の製造方法
ES2289168T3 (es) * 2001-11-26 2008-02-01 Shell Solar Gmbh Celula solar con contactos en la parte posterior y su procedimiento de fabricacion.
JP3902534B2 (ja) * 2001-11-29 2007-04-11 三洋電機株式会社 光起電力装置及びその製造方法
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
JP4155899B2 (ja) * 2003-09-24 2008-09-24 三洋電機株式会社 光起電力素子の製造方法
FR2880989B1 (fr) 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7860841B2 (en) * 2005-09-09 2010-12-28 Sap Ag Method and apparatus to support mass changes to business objects in an integrated computer system
US8575474B2 (en) * 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
FR2906405B1 (fr) * 2006-09-22 2008-12-19 Commissariat Energie Atomique Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique
WO2009052511A2 (fr) * 2007-10-18 2009-04-23 Belano Holdings, Ltd. Piles solaires à monosilicium
US8779280B2 (en) * 2009-08-18 2014-07-15 Lg Electronics Inc. Solar cell and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134090A (en) * 1982-06-18 1992-07-28 At&T Bell Laboratories Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
US6500731B1 (en) * 1999-09-22 2002-12-31 Canon Kabushiki Kaisha Process for producing semiconductor device module
WO2003083955A1 (fr) * 2002-03-29 2003-10-09 Ebara Corporation Element photovoltaique et procede de fabrication

Also Published As

Publication number Publication date
FR2906406B1 (fr) 2008-12-19
FR2906406A1 (fr) 2008-03-28
WO2008037658A2 (fr) 2008-04-03
US7972894B2 (en) 2011-07-05
US20100087031A1 (en) 2010-04-08
JP2010504636A (ja) 2010-02-12
EP2067174A2 (fr) 2009-06-10

Similar Documents

Publication Publication Date Title
WO2008037658A3 (fr) Procede de realisation de cellule photovoltaique a heterojonction en face arriere
US20200058811A1 (en) Electrode formation for heterojunction solar cells
WO2007149945A3 (fr) Procédés et dispositif de dépôt d'un film de silicium microcristallin pour dispositif photovoltaïque
EP1798778A3 (fr) Capteur solaire à couche-mince intégré et procédé de fabrication de celui-ci
WO2011073868A3 (fr) Cellule photovoltaïque heterojonction a contact arriere
WO2010071341A3 (fr) Cellule solaire et procédé pour la fabriquer
WO2011017339A3 (fr) Procédés de dépôt sélectif d'une couche épitaxiale
WO2007130188A3 (fr) Cellule solaire dotÉe de contacts à hÉtÉrojonction de semi-conducteurs dopÉs
WO2010126570A3 (fr) Cellules solaires bifaces à dopage sur la face arrière
WO2009128679A3 (fr) Cellule solaire, procédé de formation de couche émettrice de cellule solaire, et procédé de fabrication de cellule solaire
WO2009078672A3 (fr) Cellule solaire au silicium à hétérojonction et son procédé de fabrication
WO2010058976A3 (fr) Cellule solaire et son procédé de fabrication
ATE537562T1 (de) Verfahren zum herstellen von multikristallinen silizium-solarzellen des n-typs
WO2007129097A3 (fr) Fabrication de cellules photovoltaïques en CDTE par MOCVD
WO2008107094A3 (fr) Procédé de fabrication d'une cellule solaire et cellule solaire ainsi fabriquée
WO2008070266A3 (fr) Procédés de réalisation de piles solaires à couche mince tridimensionnelles
WO2010071363A3 (fr) Electrode pour cellule solaire, procédé de fabrication associé, et cellule solaire
WO2008124154A3 (fr) Photovoltaïque sur silicium
WO2011143449A3 (fr) Procédé de fabrication de cellules solaires en silicium cristallin utilisant un dépôt par épitaxie
WO2010104340A3 (fr) Cellule solaire et son procédé de fabrication, et procédé de formation de région d'impureté
WO2009140117A3 (fr) Cellule solaire à couche diélectrique déposée par rotation à surface arrière de qualité élevée
WO2009020349A3 (fr) Procédé de fabrication de cellule solaire du type à couches minces, et cellule solaire du type à couches minces fabriquée à l'aide du procédé
WO2009057655A1 (fr) Élément électroluminescent semi-conducteur et procédé pour sa fabrication
WO2010056800A3 (fr) Procédé de formation de contacts frontaux sur une cellule solaire en silicium sans motifs
WO2008147113A3 (fr) Cellule solaire à fort rendement, sa méthode de fabrication et appareil servant à sa fabrication

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07803574

Country of ref document: EP

Kind code of ref document: A2

DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)
ENP Entry into the national phase

Ref document number: 2009528733

Country of ref document: JP

Kind code of ref document: A

REEP Request for entry into the european phase

Ref document number: 2007803574

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2007803574

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE