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WO2009038091A1 - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法 Download PDF

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Publication number
WO2009038091A1
WO2009038091A1 PCT/JP2008/066768 JP2008066768W WO2009038091A1 WO 2009038091 A1 WO2009038091 A1 WO 2009038091A1 JP 2008066768 W JP2008066768 W JP 2008066768W WO 2009038091 A1 WO2009038091 A1 WO 2009038091A1
Authority
WO
WIPO (PCT)
Prior art keywords
buffer layer
intermediate electrode
sputtering
forming
solar battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066768
Other languages
English (en)
French (fr)
Inventor
Hirohisa Takahashi
Satoru Ishibashi
Isao Sugiura
Satoru Takasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to EP08832433A priority Critical patent/EP2197043A4/en
Priority to CN200880104843A priority patent/CN101790796A/zh
Priority to JP2009533159A priority patent/JPWO2009038091A1/ja
Priority to US12/678,578 priority patent/US20100193352A1/en
Publication of WO2009038091A1 publication Critical patent/WO2009038091A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

　本発明の太陽電池の製造方法は、光入射側の反対側に設けられて電力取り出し電極として機能する裏面電極と光発電セルとの間に配置されたバッファ層、または、複数の光発電セルの間に配置された中間電極を備え、前記中間電極または前記バッファ層が、ＺｎＯを基本構成元素とする透明導電膜からなる太陽電池の製造方法であって、前記透明導電膜の形成材料を備えたターゲットにスパッタ電圧を印加しつつ、前記ターゲットの表面に水平磁場を発生させてスパッタを行うことにより、前記中間電極または前記バッファ層を形成する工程を備え、前記中間電極または前記バッファ層の形成工程では、前記スパッタ電圧を３４０Ｖ以下にしてスパッタを行う。
PCT/JP2008/066768 2007-09-19 2008-09-17 太陽電池の製造方法 Ceased WO2009038091A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08832433A EP2197043A4 (en) 2007-09-19 2008-09-17 SOLAR BATTERY MANUFACTURING METHOD
CN200880104843A CN101790796A (zh) 2007-09-19 2008-09-17 太阳能电池的制造方法
JP2009533159A JPWO2009038091A1 (ja) 2007-09-19 2008-09-17 太陽電池の製造方法
US12/678,578 US20100193352A1 (en) 2007-09-19 2008-09-17 Method for manufacturing solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-242609 2007-09-19
JP2007242609 2007-09-19

Publications (1)

Publication Number Publication Date
WO2009038091A1 true WO2009038091A1 (ja) 2009-03-26

Family

ID=40467901

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066768 Ceased WO2009038091A1 (ja) 2007-09-19 2008-09-17 太陽電池の製造方法

Country Status (7)

Country Link
US (1) US20100193352A1 (ja)
EP (1) EP2197043A4 (ja)
JP (1) JPWO2009038091A1 (ja)
KR (1) KR20100044262A (ja)
CN (1) CN101790796A (ja)
TW (1) TW200937662A (ja)
WO (1) WO2009038091A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102471878A (zh) * 2009-07-17 2012-05-23 株式会社爱发科 成膜装置
CN114242834A (zh) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 一种铜栅线异质结太阳电池的生产集成设备及方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5533448B2 (ja) * 2010-08-30 2014-06-25 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
DE102011013822A1 (de) * 2011-03-14 2012-09-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Modifizierung einer Oberfläche eines Substrats durch Ionenbeschuss
CN103618010A (zh) * 2013-10-21 2014-03-05 福建铂阳精工设备有限公司 硅基薄膜太阳能电池背电极及制造方法、硅基薄膜太阳能电池
US12170194B2 (en) 2019-09-18 2024-12-17 Danmarks Tekniske Universitet Magnetron plasma sputtering arrangement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0987833A (ja) * 1995-09-26 1997-03-31 Asahi Glass Co Ltd 透明導電膜の製造方法
JP2003239069A (ja) * 2002-02-15 2003-08-27 Ulvac Japan Ltd 薄膜の製造方法及び装置
JP2004169138A (ja) * 2002-11-21 2004-06-17 Ulvac Japan Ltd 透明導電膜の製造方法及び製造装置
JP2004260014A (ja) * 2003-02-26 2004-09-16 Kyocera Corp 多層型薄膜光電変換装置
JP2007242609A (ja) 2006-02-21 2007-09-20 Gm Global Technology Operations Inc 改善された膜電極アッセンブリの耐久性のための制御された電極重なり合いアーキテクチャ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772346B2 (ja) * 1989-03-03 1995-08-02 日本真空技術株式会社 低抵抗透明導電膜の製造方法
JP2936276B2 (ja) * 1990-02-27 1999-08-23 日本真空技術株式会社 透明導電膜の製造方法およびその製造装置
JP2755281B2 (ja) * 1992-12-28 1998-05-20 富士電機株式会社 薄膜太陽電池およびその製造方法
JP2899190B2 (ja) * 1993-01-08 1999-06-02 信越化学工業株式会社 マグネトロンプラズマ用永久磁石磁気回路
GB2382908A (en) * 2001-12-10 2003-06-11 Philip Grotsky Postal system
JP2003347572A (ja) * 2002-01-28 2003-12-05 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
KR100846484B1 (ko) * 2002-03-14 2008-07-17 삼성전자주식회사 Ｒｍｉｍ 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치
JP2003273383A (ja) * 2002-03-15 2003-09-26 Sharp Corp 太陽電池素子およびその製造方法
KR100917463B1 (ko) * 2003-01-15 2009-09-14 삼성전자주식회사 마그네트론 캐소드 및 이를 채용하는 마그네트론 스퍼터링장치
DE10336422A1 (de) * 2003-08-08 2005-03-17 Applied Films Gmbh & Co. Kg Vorrichtung zur Kathodenzerstäubung
JP4568531B2 (ja) * 2004-05-07 2010-10-27 三菱重工業株式会社 集積型太陽電池及び集積型太陽電池の製造方法
JP2006013403A (ja) * 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール、その製造方法およびその修復方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0987833A (ja) * 1995-09-26 1997-03-31 Asahi Glass Co Ltd 透明導電膜の製造方法
JP2003239069A (ja) * 2002-02-15 2003-08-27 Ulvac Japan Ltd 薄膜の製造方法及び装置
JP2004169138A (ja) * 2002-11-21 2004-06-17 Ulvac Japan Ltd 透明導電膜の製造方法及び製造装置
JP2004260014A (ja) * 2003-02-26 2004-09-16 Kyocera Corp 多層型薄膜光電変換装置
JP2007242609A (ja) 2006-02-21 2007-09-20 Gm Global Technology Operations Inc 改善された膜電極アッセンブリの耐久性のための制御された電極重なり合いアーキテクチャ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2197043A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102471878A (zh) * 2009-07-17 2012-05-23 株式会社爱发科 成膜装置
CN102471878B (zh) * 2009-07-17 2013-11-20 株式会社爱发科 成膜装置
US9005413B2 (en) 2009-07-17 2015-04-14 Ulvac, Inc. Film formation apparatus
CN114242834A (zh) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 一种铜栅线异质结太阳电池的生产集成设备及方法

Also Published As

Publication number Publication date
EP2197043A1 (en) 2010-06-16
TW200937662A (en) 2009-09-01
CN101790796A (zh) 2010-07-28
KR20100044262A (ko) 2010-04-29
EP2197043A4 (en) 2012-06-27
JPWO2009038091A1 (ja) 2011-01-06
US20100193352A1 (en) 2010-08-05

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