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WO2008066118A9 - 薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法 - Google Patents

薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法 Download PDF

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Publication number
WO2008066118A9
WO2008066118A9 PCT/JP2007/073058 JP2007073058W WO2008066118A9 WO 2008066118 A9 WO2008066118 A9 WO 2008066118A9 JP 2007073058 W JP2007073058 W JP 2007073058W WO 2008066118 A9 WO2008066118 A9 WO 2008066118A9
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Prior art keywords
thin film
laminated body
film laminated
layer
inasxsb1
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Ceased
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PCT/JP2007/073058
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English (en)
French (fr)
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WO2008066118A1 (ja
Inventor
Ichiro Shibasaki
Hirotaka Geka
Atsushi Okamoto
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Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
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Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
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Priority to KR1020097010548A priority Critical patent/KR101206210B1/ko
Priority to EP07832773.1A priority patent/EP2099083B1/en
Priority to JP2008547033A priority patent/JP5536339B2/ja
Priority to CN2007800439801A priority patent/CN101601148B/zh
Priority to US12/516,538 priority patent/US8154280B2/en
Publication of WO2008066118A1 publication Critical patent/WO2008066118A1/ja
Anticipated expiration legal-status Critical
Publication of WO2008066118A9 publication Critical patent/WO2008066118A9/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02466—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component

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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

　ＩｎＡｓＳｂ動作層としての高い電子移動度とシート抵抗を有する薄膜導電層を実現するようにした薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法に関する。基板上に設けられたＡｌｘＩｎ１-ｘＳｂ混晶層と、該ＡｌｘＩｎ１-ｘＳｂ層上に直接接して設けられたＩｎＡｓｘＳｂ１-ｘ(０<ｘ≦１)薄膜導電層と、を備え、前記ＡｌｘＩｎ１-ｘＳｂ混晶層は、前記ＩｎＡｓｘＳｂ１-ｘ薄膜導電層より高抵抗又は絶縁性、若しくはｐ型の伝導性を示す層で、かつ、バンドギャップが前記ＩｎＡｓｘＳｂ１-ｘ薄膜導電層より大きく格子不整合(ミスマッチ)が+１.３％～-０.８％であることを特徴とする薄膜積層体を提供する。
PCT/JP2007/073058 2006-11-30 2007-11-29 薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法 Ceased WO2008066118A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097010548A KR101206210B1 (ko) 2006-11-30 2007-11-29 박막 적층체 및 그것을 사용한 박막 자기 센서 및 그 제조방법
EP07832773.1A EP2099083B1 (en) 2006-11-30 2007-11-29 Thin film laminated body, thin film magnetic sensor using the thin film laminated body and method for manufacturing the thin film laminated body
JP2008547033A JP5536339B2 (ja) 2006-11-30 2007-11-29 薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法
CN2007800439801A CN101601148B (zh) 2006-11-30 2007-11-29 薄膜积层体和使用其的薄膜磁传感器及其制造方法
US12/516,538 US8154280B2 (en) 2006-11-30 2007-11-29 Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006324573 2006-11-30
JP2006-324573 2006-11-30

Publications (2)

Publication Number Publication Date
WO2008066118A1 WO2008066118A1 (ja) 2008-06-05
WO2008066118A9 true WO2008066118A9 (ja) 2009-06-25

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PCT/JP2007/073058 Ceased WO2008066118A1 (ja) 2006-11-30 2007-11-29 薄膜積層体及びそれを用いた薄膜磁気センサ並びにその製造方法

Country Status (6)

Country Link
US (1) US8154280B2 (ja)
EP (1) EP2099083B1 (ja)
JP (1) JP5536339B2 (ja)
KR (1) KR101206210B1 (ja)
CN (1) CN101601148B (ja)
WO (1) WO2008066118A1 (ja)

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US8476129B1 (en) 2010-05-24 2013-07-02 MCube Inc. Method and structure of sensors and MEMS devices using vertical mounting with interconnections
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US9709509B1 (en) 2009-11-13 2017-07-18 MCube Inc. System configured for integrated communication, MEMS, Processor, and applications using a foundry compatible semiconductor process
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CN102185100B (zh) * 2011-04-14 2013-05-22 清华大学 一种硅基几何巨磁电阻器件及其制备方法
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JP6088281B2 (ja) * 2013-02-18 2017-03-01 旭化成株式会社 化合物半導体積層体及びその製造方法
CN104157069A (zh) * 2013-05-14 2014-11-19 北京嘉岳同乐极电子有限公司 高灵敏度磁传感器
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Also Published As

Publication number Publication date
JPWO2008066118A1 (ja) 2010-03-11
CN101601148A (zh) 2009-12-09
EP2099083A4 (en) 2012-01-25
WO2008066118A1 (ja) 2008-06-05
KR20090082425A (ko) 2009-07-30
CN101601148B (zh) 2012-03-28
EP2099083A1 (en) 2009-09-09
JP5536339B2 (ja) 2014-07-02
US20100045282A1 (en) 2010-02-25
US8154280B2 (en) 2012-04-10
KR101206210B1 (ko) 2012-11-28
EP2099083B1 (en) 2014-09-03

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