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WO2009028360A1 - 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子 - Google Patents

感光性組成物、それから形成された硬化膜、および硬化膜を有する素子 Download PDF

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Publication number
WO2009028360A1
WO2009028360A1 PCT/JP2008/064776 JP2008064776W WO2009028360A1 WO 2009028360 A1 WO2009028360 A1 WO 2009028360A1 JP 2008064776 W JP2008064776 W JP 2008064776W WO 2009028360 A1 WO2009028360 A1 WO 2009028360A1
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Prior art keywords
carbon atoms
photosensitive composition
polysiloxane
cured film
acrylic resin
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Ceased
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PCT/JP2008/064776
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English (en)
French (fr)
Inventor
Masahide Senoo
Toru Okazawa
Mitsuhito Suwa
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Toray Industries Inc
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Toray Industries Inc
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Priority to JP2009530057A priority Critical patent/JP5099140B2/ja
Priority to CN2008801036802A priority patent/CN101784958B/zh
Publication of WO2009028360A1 publication Critical patent/WO2009028360A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
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    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/29—Compounds containing one or more carbon-to-nitrogen double bonds
    • C—CHEMISTRY; METALLURGY
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    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
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    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G02—OPTICS
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    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
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    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
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    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
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    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
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    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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  • Optical Integrated Circuits (AREA)

Abstract

　本発明は、（ａ）ポリシロキサン、（ｂ）アクリル樹脂、（ｃ）キノンジアジド化合物、（ｄ）溶剤を含有する感光性組成物であって、（ａ）ポリシロキサンと（ｂ）アクリル樹脂の混合比率が重量比で、ポリシロキサン／アクリル樹脂＝８０／２０～２０／８０であり、かつ（ａ）ポリシロキサンが、一般式（１）で表されるオルガノシランの１種以上を反応させることによって合成されるポリシロキサンである感光性組成物である。 （式中、Ｒ１は水素、炭素数１～１０のアルキル基、炭素数２～１０のアルケニル基、炭素数６～１５のアリール基のいずれかを表し、複数のＲ１はそれぞれ同じでも異なっていてもよい。Ｒ２は水素、炭素数１～６のアルキル基、炭素数２～６のアシル基、炭素数６～１５のアリール基のいずれかを表し、複数のＲ２はそれぞれ同じでも異なっていてもよい。ｎは０から３の整数を表す。）。本発明により、高耐熱性、高透明性の特性を有し、かつ基板との密着性が良好な硬化膜を得ることができ、ＴＦＴ基板用平坦化膜、層間絶縁膜、あるいは光導波路のコアやクラッド材の形成に用いられる感光性組成物を提供できる。
PCT/JP2008/064776 2007-08-24 2008-08-20 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子 Ceased WO2009028360A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009530057A JP5099140B2 (ja) 2007-08-24 2008-08-20 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子
CN2008801036802A CN101784958B (zh) 2007-08-24 2008-08-20 感光性组合物、由该组合物形成的固化膜、以及具有固化膜的元件

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Application Number Priority Date Filing Date Title
JP2007-217984 2007-08-24
JP2007217984 2007-08-24

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WO2009028360A1 true WO2009028360A1 (ja) 2009-03-05

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JP (1) JP5099140B2 (ja)
KR (1) KR20100043259A (ja)
CN (1) CN101784958B (ja)
TW (1) TWI442185B (ja)
WO (1) WO2009028360A1 (ja)

Cited By (20)

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JP2010008603A (ja) * 2008-06-25 2010-01-14 Jsr Corp 配線隔壁形成用感放射線性樹脂組成物ならびに配線隔壁およびその形成方法
JP2010181866A (ja) * 2009-01-07 2010-08-19 Fujifilm Corp ポジ型感光性樹脂組成物、硬化膜、層間絶縁膜、有機ｅｌ表示装置、および液晶表示装置
CN101937172A (zh) * 2009-06-29 2011-01-05 Jsr株式会社 正型放射线敏感性组合物、固化膜、层间绝缘膜及其形成方法、显示元件以及硅氧烷聚合物
CN102156386A (zh) * 2009-12-16 2011-08-17 Jsr株式会社 正型放射线敏感性组合物、层间绝缘膜及其形成方法
JP2011186247A (ja) * 2010-03-09 2011-09-22 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
WO2011142391A1 (ja) * 2010-05-13 2011-11-17 日産化学工業株式会社 感光性樹脂組成物およびディスプレイ装置
KR20120091138A (ko) * 2009-10-30 2012-08-17 제이에스알 가부시끼가이샤 반전 패턴 형성 방법 및 폴리실록산 수지 조성물
WO2013089403A1 (ko) * 2011-12-13 2013-06-20 주식회사 동진쎄미켐 포토레지스트 조성물
CN103801278A (zh) * 2014-02-25 2014-05-21 合肥工业大学 白云石凹凸棒石粘土热活化制备纳米氧化镁基复合材料的方法及应用
JP2014189657A (ja) * 2013-03-27 2014-10-06 Jsr Corp 感放射線性樹脂組成物
JP2015501954A (ja) * 2011-12-13 2015-01-19 ドンジン セミケム カンパニー リミテッド フォトレジスト組成物
JP2015127829A (ja) * 2009-11-27 2015-07-09 Jsr株式会社 硬化膜の形成方法
JP2016128901A (ja) * 2014-11-21 2016-07-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ポジ型感光性樹脂組成物及びそれより調製される硬化膜
WO2017162831A1 (en) * 2016-03-25 2017-09-28 Az Electronic Materials (Luxembourg) S.A.R.L. Photosensitive siloxane composition
JPWO2016125836A1 (ja) * 2015-02-04 2018-01-18 堺ディスプレイプロダクト株式会社 ポジ型感光性シロキサン組成物、アクティブマトリクス基板、表示装置、及びアクティブマトリクス基板の製造方法
JP2019120932A (ja) * 2017-12-29 2019-07-22 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ポジ型感光性樹脂組成物およびそれから調製された硬化膜
JP2019211765A (ja) * 2018-05-30 2019-12-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ポジ型感光性樹脂組成物およびそれから調製された硬化膜
JP2020086463A (ja) * 2018-11-29 2020-06-04 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ポジ型感光性樹脂組成物及びそれから調製される硬化膜
CN112147845A (zh) * 2019-06-28 2020-12-29 罗门哈斯电子材料韩国有限公司 正型光敏树脂组合物和由其制备的固化膜
WO2025206117A1 (ja) * 2024-03-29 2025-10-02 リンテック株式会社 シラン化合物重合体、半導体用絶縁材料、及び半導体絶縁膜形成剤

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TWI432895B (zh) * 2010-12-01 2014-04-01 Chi Mei Corp 感光性聚矽氧烷組成物及其所形成之基材保護膜
EP2799928B1 (en) * 2011-12-26 2019-05-22 Toray Industries, Inc. Photosensitive resin composition and process for producing semiconductor element
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