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WO2009028360A1 - Composition photosensible, film durci formé à partir de celle-ci et dispositif à film durci - Google Patents

Composition photosensible, film durci formé à partir de celle-ci et dispositif à film durci Download PDF

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Publication number
WO2009028360A1
WO2009028360A1 PCT/JP2008/064776 JP2008064776W WO2009028360A1 WO 2009028360 A1 WO2009028360 A1 WO 2009028360A1 JP 2008064776 W JP2008064776 W JP 2008064776W WO 2009028360 A1 WO2009028360 A1 WO 2009028360A1
Authority
WO
WIPO (PCT)
Prior art keywords
carbon atoms
photosensitive composition
polysiloxane
cured film
acrylic resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064776
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English (en)
Japanese (ja)
Inventor
Masahide Senoo
Toru Okazawa
Mitsuhito Suwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP2009530057A priority Critical patent/JP5099140B2/ja
Priority to CN2008801036802A priority patent/CN101784958B/zh
Publication of WO2009028360A1 publication Critical patent/WO2009028360A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/29—Compounds containing one or more carbon-to-nitrogen double bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12069—Organic material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material
    • G02F2202/022—Materials and properties organic material polymeric
    • G02F2202/023—Materials and properties organic material polymeric curable

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention porte sur une composition photosensible contenant un polysiloxane (a), une résine acrylique (b), un composé quinonediazide (c) et un solvant (d). Dans cette composition photosensible, le rapport de mélange entre le polysiloxane (a) et la résine acrylique (b), à savoir le rapport en poids polysiloxane/résine acrylique est de 80/20 à 20/80, et le polysiloxane (a) est synthétisé par réaction d'un ou plusieurs organosilanes représentés par la formule générale (1). (Dans la formule, R1 représente un atome d'hydrogène, un groupe alkyle ayant 1 à 10 atomes de carbone, un groupe alcényle ayant 2 à 10 atomes de carbone ou un groupe aryle ayant 6 à 15 atomes de carbone, les R1 pouvant être identiques ou différents les uns des autres; R2 représente un atome d'hydrogène, un groupe alkyle ayant 1 à 6 atomes de carbone, un groupe alcyle ayant 2 à 6 atomes de carbone ou un groupe aryle ayant 6 à 15 atomes de carbone, les R2 pouvant être identiques ou différents les uns des autres; et n représente un entier de 0 à 3). La composition photosensible permet d'obtenir un film durci qui a une résistance à la chaleur et une transparence élevées, tout en présentant une bonne adhérence à un substrat. Cette composition photosensible est utilisée pour former un film de planarisation pour des substrats TFT, un film isolant d'intercouche ou un matériau d'âme ou de gaine pour des guides d'ondes optiques.
PCT/JP2008/064776 2007-08-24 2008-08-20 Composition photosensible, film durci formé à partir de celle-ci et dispositif à film durci Ceased WO2009028360A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009530057A JP5099140B2 (ja) 2007-08-24 2008-08-20 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子
CN2008801036802A CN101784958B (zh) 2007-08-24 2008-08-20 感光性组合物、由该组合物形成的固化膜、以及具有固化膜的元件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-217984 2007-08-24
JP2007217984 2007-08-24

Publications (1)

Publication Number Publication Date
WO2009028360A1 true WO2009028360A1 (fr) 2009-03-05

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ID=40387083

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064776 Ceased WO2009028360A1 (fr) 2007-08-24 2008-08-20 Composition photosensible, film durci formé à partir de celle-ci et dispositif à film durci

Country Status (5)

Country Link
JP (1) JP5099140B2 (fr)
KR (1) KR20100043259A (fr)
CN (1) CN101784958B (fr)
TW (1) TWI442185B (fr)
WO (1) WO2009028360A1 (fr)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010008603A (ja) * 2008-06-25 2010-01-14 Jsr Corp 配線隔壁形成用感放射線性樹脂組成物ならびに配線隔壁およびその形成方法
JP2010181866A (ja) * 2009-01-07 2010-08-19 Fujifilm Corp ポジ型感光性樹脂組成物、硬化膜、層間絶縁膜、有機ｅｌ表示装置、および液晶表示装置
CN101937172A (zh) * 2009-06-29 2011-01-05 Jsr株式会社 正型放射线敏感性组合物、固化膜、层间绝缘膜及其形成方法、显示元件以及硅氧烷聚合物
CN102156386A (zh) * 2009-12-16 2011-08-17 Jsr株式会社 正型放射线敏感性组合物、层间绝缘膜及其形成方法
JP2011186247A (ja) * 2010-03-09 2011-09-22 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
WO2011142391A1 (fr) * 2010-05-13 2011-11-17 日産化学工業株式会社 Composition de résine photosensible et dispositif d'affichage
KR20120091138A (ko) * 2009-10-30 2012-08-17 제이에스알 가부시끼가이샤 반전 패턴 형성 방법 및 폴리실록산 수지 조성물
WO2013089403A1 (fr) * 2011-12-13 2013-06-20 주식회사 동진쎄미켐 Composition de résine photosensible
CN103801278A (zh) * 2014-02-25 2014-05-21 合肥工业大学 白云石凹凸棒石粘土热活化制备纳米氧化镁基复合材料的方法及应用
JP2014189657A (ja) * 2013-03-27 2014-10-06 Jsr Corp 感放射線性樹脂組成物
JP2015501954A (ja) * 2011-12-13 2015-01-19 ドンジン セミケム カンパニー リミテッド フォトレジスト組成物
JP2015127829A (ja) * 2009-11-27 2015-07-09 Jsr株式会社 硬化膜の形成方法
JP2016128901A (ja) * 2014-11-21 2016-07-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ポジ型感光性樹脂組成物及びそれより調製される硬化膜
WO2017162831A1 (fr) * 2016-03-25 2017-09-28 Az Electronic Materials (Luxembourg) S.A.R.L. Composition photosensible de polysiloxane
JPWO2016125836A1 (ja) * 2015-02-04 2018-01-18 堺ディスプレイプロダクト株式会社 ポジ型感光性シロキサン組成物、アクティブマトリクス基板、表示装置、及びアクティブマトリクス基板の製造方法
JP2019120932A (ja) * 2017-12-29 2019-07-22 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ポジ型感光性樹脂組成物およびそれから調製された硬化膜
JP2019211765A (ja) * 2018-05-30 2019-12-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ポジ型感光性樹脂組成物およびそれから調製された硬化膜
JP2020086463A (ja) * 2018-11-29 2020-06-04 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド ポジ型感光性樹脂組成物及びそれから調製される硬化膜
CN112147845A (zh) * 2019-06-28 2020-12-29 罗门哈斯电子材料韩国有限公司 正型光敏树脂组合物和由其制备的固化膜
WO2025206117A1 (fr) * 2024-03-29 2025-10-02 リンテック株式会社 Polymère de composé silane, matériau isolant à semi-conducteur et agent de formation de film isolant à semi-conducteur

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI432895B (zh) * 2010-12-01 2014-04-01 Chi Mei Corp 感光性聚矽氧烷組成物及其所形成之基材保護膜
EP2799928B1 (fr) * 2011-12-26 2019-05-22 Toray Industries, Inc. Composition de résine photosensible et processus de production d'élément semi-conducteur
US9461257B2 (en) 2012-03-01 2016-10-04 Sumitomo Chemical Company, Limited Electronic device insulating layer, and method for producing electronic device insulating layer
TWI477914B (zh) * 2012-03-29 2015-03-21 Chi Mei Corp 光硬化性聚矽氧烷組成物、保護膜及具有保護膜的元件
TWI443465B (zh) 2012-04-23 2014-07-01 Chi Mei Corp 感光性聚矽氧烷組成物、保護膜及具有保護膜的元件
CN107200818B (zh) * 2012-07-24 2019-11-29 日产化学工业株式会社 适用于液晶取向膜的制造方法的聚合物
TWI468860B (zh) * 2012-08-14 2015-01-11 奇美實業股份有限公司 感光性樹脂組成物及其應用
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KR20240099912A (ko) 2022-12-22 2024-07-01 듀폰스페셜티머터리얼스코리아 유한회사 네거티브형 감광성 수지 조성물 및 이의 경화막

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