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WO2009072810A2 - Composition de gravure destinée à un substrat de verre - Google Patents

Composition de gravure destinée à un substrat de verre Download PDF

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Publication number
WO2009072810A2
WO2009072810A2 PCT/KR2008/007143 KR2008007143W WO2009072810A2 WO 2009072810 A2 WO2009072810 A2 WO 2009072810A2 KR 2008007143 W KR2008007143 W KR 2008007143W WO 2009072810 A2 WO2009072810 A2 WO 2009072810A2
Authority
WO
WIPO (PCT)
Prior art keywords
acid
composition
etchant composition
total weight
inorganic salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2008/007143
Other languages
English (en)
Other versions
WO2009072810A3 (fr
Inventor
Woong Kim
Jae-Seong Park
Jae-Won Jeong
Sang-Hyup Jung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chemtronics Co Ltd
Original Assignee
Chemtronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Chemtronics Co Ltd filed Critical Chemtronics Co Ltd
Publication of WO2009072810A2 publication Critical patent/WO2009072810A2/fr
Publication of WO2009072810A3 publication Critical patent/WO2009072810A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material

Definitions

  • It relates to an etchant composition for glass substrates and more particularly, to an etchant composition for glass substrates, which allows high etch rate for glass substrates, etching the surface of glass substrates smoothly, and maintaining etchability.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • LCD flat panel display devices have been recently widely used and studied since they provide excellent image quality and use very small amount of power. There are portability requirements such as reducing weights and sizes for TVs, laptops, and mobile phones equipped with LCD which people like to carry all the time.
  • a chemical polishing agent including a perfluorocompound, an inorganic acid, an organic acid, a sulfonic acid-based surfactant and an amine-based surfactant is known as an etchant composition for glass substrates.
  • an etchant composition for glass substrates does not teach each element's content of the composition and may be complicated due to many elements' use.
  • An aspect of embodiment is to provide an etchant composition for glass substrates including: 10-45wt% of an inorganic salt including fluorine to the total weight of the etchant composition; l-10wt% Of NH 4 HF 2 ; l-10wt% of an acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine; and water to make the total weight of the composition be 100wt%.
  • the inorganic salt including fluorine may be at least one chosen from HF, NaF, KF, KBF 4 and NaBF 4 .
  • the acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine may be at least one chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid.
  • Another aspect of embodiments is to provide an etchant composition for glass substrates including: 10-45wt% of at least one compound chosen from HF, NaF, KF, KBF 4 and NaBF 4 with respect to the total weight of the composition; l-10wt% of NH 4 HF 2 ; l-10wt% of at least one inorganic acid chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid; and water to make the total weight of the composition be 100wt%.
  • the etchant composition for glass substrates may further include a surfactant.
  • the surfactant is at least one chosen from ammonium fluoroalkyl sulfonimide, polyethylene glycol mono[4-(l,l,3,3-tetramethylbutyl)phenyl]ether, dodecylbenzene sulfonic acid, dodecylpyridinium chloride (DPC), C n F 2n+1 CH 2 CH 2 SO 3 -NH 4 + , C n F 2n+1 CH 2 CH 2 SO 3 H, (C n F 2n+1 CH 2 CH 2 O) x PO(ONH 4 + ) y (OCH 2 CH 2 OH) z , C n F 2n+I CH 2 CH 2 OPO(OCH 2 CH 2 OH)(OH), C n F 2n+I SO 2 N(C 2 H 5 )(CH 2 CH 3 ),
  • the surfactant may be added by 0.001 to 1 wt% to the total weight of the etchant composition.
  • Fig. 1 illustrates etch duration time according to Example 1.
  • Fig. 2 illustrates etch duration time according to Comparison Example.
  • Fig. 3 is experimental standards for testing quality of the surface of an etched glass according to an embodiment.
  • Fig. 4 is a photograph illustrating dimple defect.
  • Figs. 5 to 8 are photographs illustrating differences in the dimple defect according to Example 1.
  • Figs. 9 to 12 are photographs illustrating differences in the dimple defect according to Comparison Example.
  • a glass substrate in an etchant composition for glass substrates may be any material composed with glass, for example glass substrates for LCDs and display boards such as PDP (Plasma Display Panel), ELD (Electroluminescent Display) and the like.
  • PDP Plasma Display Panel
  • ELD Electrode Deposition
  • An etchant composition for glass substrates may include 10-45wt% of an inorganic salt including fluorine to the total weight of the etchant composition; l-10wt%
  • the inorganic salt including fluorine is an essential component for etching glass substrates and may be at least one chosen from HF, NaF, KF, KBF 4 and NaBF 4 , preferably HF. It may be used alone or in a combination of two or more.
  • the inorganic salt including fluorine may be added by 10 to 45wt% to the total weight of the etchant composition, preferably 20 to 42wt%, more preferably 30 to
  • a content Of NH 4 HF 2 may be 1 to 10wt% to the total weight of the etchant composition. When it is used more than 10wt%, an etch rate may decrease and when it is used less than 1 wt%, the surface of a glass substrate may not be smooth.
  • the acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine may remove remnants produced during the etching process and improve an etch rate. It may be at least one chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid, preferably hydrochloric acid.
  • the acid may be added by 1 to 10wt% to the total weight of the etchant composition.
  • an ability to remove defects of a glass substrate may be decreased and when it is used less than 1 wt%, an etch rate may significantly decrease and it may not remove remnants sufficiently.
  • the etchant composition for glass substrates may further include a surfactant.
  • the surfactant may improve uniformity of an etch rate as well as smoothness since it increase adhesiveness between the etchant and the glass substrate to accelerate a reaction rate on the surface of the glass substrate.
  • the surfactant may be at least one chosen from ammonium fluoroalkyl sulfonimide, polyethylene glycol mono[4-(l,l,3,3-tetramethylbutyl)phenyl]ether, dodecylbenzene sulfonic acid, dodecylpyridinium chloride (DPC), C n F 2n+1 CH 2 CH 2 SO 3 -NH 4 + , C n F 2IV nCH 2 CH 2 SO 3 H, (C n F 2n+l
  • the surfactant may be added by 0.001 to lwt% to the total weight of the etchant composition. When it is used more than lwt%, it may not be economical since it does not further increase an etch rate and the uniformity.
  • Etchant compositions for a glass substrate including the components in Table 1 were prepared by using cone. 55% of HF, cone. 35% of HCl and cone. 98% OfNH 4 HF 2 .
  • An etchant composition for a glass substrate including the components in Table 2 was prepared by using cone. 55% of HF, cone. 35% of HCl and cone. 98% of NH 4 HF 2.
  • An etch rate(E/R) is a value expressing an etched amount per 1 minute to be proportional to time when a glass is etched with an etchant composed with a particular composition. For example, after a glass having a thickness of lOOO ⁇ m(l.Ot) was etched for 10 minutes, if the thickness of the glass was 600 ⁇ m(0.6t), the etch rate was
  • Fig. 1 is data showing etch duration time of Example 1
  • Fig. 2 is data showing etch duration time of Comparison Example.
  • the etch duration time was measured every hour for 49 or 51 hours.
  • a glass was etched for 15 minutes every hour. Then an etch rate was calculated by comparing thicknesses before and after etching. A temperature was maintained at 30 ° C and error was ⁇ 1 ° C during the experiment.
  • etchability was decreased after 36 hours in Example 1.
  • the etch rate was decreased from 35 ⁇ m/min to 27-28 ⁇ m/min of which time is called as an optimization time. That is, it is time to minimize loss which can be caused during the etching process by using the composition of Example 1.
  • a particular etch rate was maintained in Example 1 so that it was used for more than 51 hours.
  • the first drop in etchability was appeared with the composition of Comparison Example. The etch rate was decreased from 32 ⁇ m/min to 27 ⁇ m/min. It was note that the etch rate was about late 20' s and dropped to about 23-24 ⁇ m/min at the optimization time of Fig. 1. This may cause huge loss in productivity.
  • Example 1 In order to compare surface qualities, a dimple defect experiment was performed with the compositions of Example 1 and Comparison Example.
  • Diste defect is defect caused by a microscopic feature or bump which becomes bigger and sparkling after etching. As shown in Fig. 4, such a microscopic feature or bump looks bigger after etching. Table 4
  • the scribe pressure indicates a certain pressure such as 0.01MPa and 0.05MPa, as in Table 4, to create a dimple on purpose on a glass surface.
  • Example 4 the dimple of Example 1 , in which NH 4 HF 2 is used, looks less expanded than that of Comparison Example, in which NH 4 F is used.
  • the etchant composition for glass substrates according to embodiments exhibits superior etch rate, etch duration time and quality of etched glass surfaces.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)

Abstract

L'invention concerne une composition d'agent de gravure destinée à des substrats de verre, et plus particulièrement, une composition d'agent de gravure contenant 10 à 45% en poids d'un sel minéral renfermant du fluor par rapport au poids total de la composition; 1-10% en poids de NH4HF2 ; 1-10% en poids d'un acide possédant une constante (pKa) de dissociation d'acide inférieure à celle du sel minéral contenant du fluor; et de l'eau pour que le poids total de la composition atteigne 100% en poids. Cette composition d'agent de gravure destinée à des substrats de verre permet une réduction de la complexité et des coûts de fabrication grâce à l'utilisation d'éléments simples, offre une vitesse de gravure élevée, grave la surface d'un substrat de verre de manière régulière, présente une excellente aptitude à la gravure et améliore la qualité d'image.
PCT/KR2008/007143 2007-12-04 2008-12-03 Composition de gravure destinée à un substrat de verre Ceased WO2009072810A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070124792A KR100868228B1 (ko) 2007-12-04 2007-12-04 유리 기판용 식각액 조성물
KR10-2007-0124792 2007-12-04

Publications (2)

Publication Number Publication Date
WO2009072810A2 true WO2009072810A2 (fr) 2009-06-11
WO2009072810A3 WO2009072810A3 (fr) 2009-09-03

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KR (1) KR100868228B1 (fr)
WO (1) WO2009072810A2 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103797405A (zh) * 2011-07-07 2014-05-14 康宁股份有限公司 用于强化玻璃制品的表面瑕疵改性
TWI457308B (fr) * 2012-08-17 2014-10-21
TWI506002B (zh) * 2011-03-14 2015-11-01 Novatech Co Ltd 超薄面板製造方法
US9278886B2 (en) 2010-11-30 2016-03-08 Corning Incorporated Methods of forming high-density arrays of holes in glass
US10756003B2 (en) 2016-06-29 2020-08-25 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
US11062986B2 (en) 2017-05-25 2021-07-13 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US11114309B2 (en) 2016-06-01 2021-09-07 Corning Incorporated Articles and methods of forming vias in substrates
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11774233B2 (en) 2016-06-29 2023-10-03 Corning Incorporated Method and system for measuring geometric parameters of through holes
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9488857B2 (en) 2014-01-10 2016-11-08 Corning Incorporated Method of strengthening an edge of a glass substrate
KR102269921B1 (ko) * 2014-03-31 2021-06-28 삼성디스플레이 주식회사 유리 강화용 조성물 및 이를 이용한 터치 스크린 글래스의 제조 방법
KR102079042B1 (ko) * 2016-07-04 2020-02-20 오씨아이 주식회사 실리콘 기판 식각 용액
KR102087703B1 (ko) * 2019-04-08 2020-03-11 (주)혜덕 칠판 유리 제조용 식각액 조성물 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100415261B1 (ko) * 1998-03-26 2004-03-26 이기원 전자표시장치및기판용세정및식각조성물
JP2000164586A (ja) * 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
JP5132859B2 (ja) * 2001-08-24 2013-01-30 ステラケミファ株式会社 多成分を有するガラス基板用の微細加工表面処理液
KR101247246B1 (ko) * 2004-10-14 2013-03-25 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 에칭 조성물
WO2006083693A2 (fr) * 2005-01-31 2006-08-10 Applied Materials, Inc. Traitement de mordançage de surfaces de substrats et de chambres
KR100677052B1 (ko) * 2005-06-17 2007-02-02 테크노세미켐 주식회사 액정 유리 기판용 식각액 조성물

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9278886B2 (en) 2010-11-30 2016-03-08 Corning Incorporated Methods of forming high-density arrays of holes in glass
US9802855B2 (en) 2010-11-30 2017-10-31 Corning Incorporated Methods of forming high-density arrays of holes in glass
TWI506002B (zh) * 2011-03-14 2015-11-01 Novatech Co Ltd 超薄面板製造方法
CN103797405A (zh) * 2011-07-07 2014-05-14 康宁股份有限公司 用于强化玻璃制品的表面瑕疵改性
TWI457308B (fr) * 2012-08-17 2014-10-21
US11114309B2 (en) 2016-06-01 2021-09-07 Corning Incorporated Articles and methods of forming vias in substrates
TWI761355B (zh) * 2016-06-29 2022-04-21 美商康寧公司 附接至半導體晶圓之具有貫通孔的無機晶圓
US10756003B2 (en) 2016-06-29 2020-08-25 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
US11774233B2 (en) 2016-06-29 2023-10-03 Corning Incorporated Method and system for measuring geometric parameters of through holes
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US11062986B2 (en) 2017-05-25 2021-07-13 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11972993B2 (en) 2017-05-25 2024-04-30 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness

Also Published As

Publication number Publication date
KR100868228B1 (ko) 2008-11-11
WO2009072810A3 (fr) 2009-09-03

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