WO2009072810A2 - Etchant composition for glass substrate - Google Patents
Etchant composition for glass substrate Download PDFInfo
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- WO2009072810A2 WO2009072810A2 PCT/KR2008/007143 KR2008007143W WO2009072810A2 WO 2009072810 A2 WO2009072810 A2 WO 2009072810A2 KR 2008007143 W KR2008007143 W KR 2008007143W WO 2009072810 A2 WO2009072810 A2 WO 2009072810A2
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- acid
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- etchant composition
- total weight
- inorganic salt
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
- C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
Definitions
- It relates to an etchant composition for glass substrates and more particularly, to an etchant composition for glass substrates, which allows high etch rate for glass substrates, etching the surface of glass substrates smoothly, and maintaining etchability.
- TFT-LCD Thin Film Transistor-Liquid Crystal Display
- LCD flat panel display devices have been recently widely used and studied since they provide excellent image quality and use very small amount of power. There are portability requirements such as reducing weights and sizes for TVs, laptops, and mobile phones equipped with LCD which people like to carry all the time.
- a chemical polishing agent including a perfluorocompound, an inorganic acid, an organic acid, a sulfonic acid-based surfactant and an amine-based surfactant is known as an etchant composition for glass substrates.
- an etchant composition for glass substrates does not teach each element's content of the composition and may be complicated due to many elements' use.
- An aspect of embodiment is to provide an etchant composition for glass substrates including: 10-45wt% of an inorganic salt including fluorine to the total weight of the etchant composition; l-10wt% Of NH 4 HF 2 ; l-10wt% of an acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine; and water to make the total weight of the composition be 100wt%.
- the inorganic salt including fluorine may be at least one chosen from HF, NaF, KF, KBF 4 and NaBF 4 .
- the acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine may be at least one chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid.
- Another aspect of embodiments is to provide an etchant composition for glass substrates including: 10-45wt% of at least one compound chosen from HF, NaF, KF, KBF 4 and NaBF 4 with respect to the total weight of the composition; l-10wt% of NH 4 HF 2 ; l-10wt% of at least one inorganic acid chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid; and water to make the total weight of the composition be 100wt%.
- the etchant composition for glass substrates may further include a surfactant.
- the surfactant is at least one chosen from ammonium fluoroalkyl sulfonimide, polyethylene glycol mono[4-(l,l,3,3-tetramethylbutyl)phenyl]ether, dodecylbenzene sulfonic acid, dodecylpyridinium chloride (DPC), C n F 2n+1 CH 2 CH 2 SO 3 -NH 4 + , C n F 2n+1 CH 2 CH 2 SO 3 H, (C n F 2n+1 CH 2 CH 2 O) x PO(ONH 4 + ) y (OCH 2 CH 2 OH) z , C n F 2n+I CH 2 CH 2 OPO(OCH 2 CH 2 OH)(OH), C n F 2n+I SO 2 N(C 2 H 5 )(CH 2 CH 3 ),
- the surfactant may be added by 0.001 to 1 wt% to the total weight of the etchant composition.
- Fig. 1 illustrates etch duration time according to Example 1.
- Fig. 2 illustrates etch duration time according to Comparison Example.
- Fig. 3 is experimental standards for testing quality of the surface of an etched glass according to an embodiment.
- Fig. 4 is a photograph illustrating dimple defect.
- Figs. 5 to 8 are photographs illustrating differences in the dimple defect according to Example 1.
- Figs. 9 to 12 are photographs illustrating differences in the dimple defect according to Comparison Example.
- a glass substrate in an etchant composition for glass substrates may be any material composed with glass, for example glass substrates for LCDs and display boards such as PDP (Plasma Display Panel), ELD (Electroluminescent Display) and the like.
- PDP Plasma Display Panel
- ELD Electrode Deposition
- An etchant composition for glass substrates may include 10-45wt% of an inorganic salt including fluorine to the total weight of the etchant composition; l-10wt%
- the inorganic salt including fluorine is an essential component for etching glass substrates and may be at least one chosen from HF, NaF, KF, KBF 4 and NaBF 4 , preferably HF. It may be used alone or in a combination of two or more.
- the inorganic salt including fluorine may be added by 10 to 45wt% to the total weight of the etchant composition, preferably 20 to 42wt%, more preferably 30 to
- a content Of NH 4 HF 2 may be 1 to 10wt% to the total weight of the etchant composition. When it is used more than 10wt%, an etch rate may decrease and when it is used less than 1 wt%, the surface of a glass substrate may not be smooth.
- the acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine may remove remnants produced during the etching process and improve an etch rate. It may be at least one chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid, preferably hydrochloric acid.
- the acid may be added by 1 to 10wt% to the total weight of the etchant composition.
- an ability to remove defects of a glass substrate may be decreased and when it is used less than 1 wt%, an etch rate may significantly decrease and it may not remove remnants sufficiently.
- the etchant composition for glass substrates may further include a surfactant.
- the surfactant may improve uniformity of an etch rate as well as smoothness since it increase adhesiveness between the etchant and the glass substrate to accelerate a reaction rate on the surface of the glass substrate.
- the surfactant may be at least one chosen from ammonium fluoroalkyl sulfonimide, polyethylene glycol mono[4-(l,l,3,3-tetramethylbutyl)phenyl]ether, dodecylbenzene sulfonic acid, dodecylpyridinium chloride (DPC), C n F 2n+1 CH 2 CH 2 SO 3 -NH 4 + , C n F 2IV nCH 2 CH 2 SO 3 H, (C n F 2n+l
- the surfactant may be added by 0.001 to lwt% to the total weight of the etchant composition. When it is used more than lwt%, it may not be economical since it does not further increase an etch rate and the uniformity.
- Etchant compositions for a glass substrate including the components in Table 1 were prepared by using cone. 55% of HF, cone. 35% of HCl and cone. 98% OfNH 4 HF 2 .
- An etchant composition for a glass substrate including the components in Table 2 was prepared by using cone. 55% of HF, cone. 35% of HCl and cone. 98% of NH 4 HF 2.
- An etch rate(E/R) is a value expressing an etched amount per 1 minute to be proportional to time when a glass is etched with an etchant composed with a particular composition. For example, after a glass having a thickness of lOOO ⁇ m(l.Ot) was etched for 10 minutes, if the thickness of the glass was 600 ⁇ m(0.6t), the etch rate was
- Fig. 1 is data showing etch duration time of Example 1
- Fig. 2 is data showing etch duration time of Comparison Example.
- the etch duration time was measured every hour for 49 or 51 hours.
- a glass was etched for 15 minutes every hour. Then an etch rate was calculated by comparing thicknesses before and after etching. A temperature was maintained at 30 ° C and error was ⁇ 1 ° C during the experiment.
- etchability was decreased after 36 hours in Example 1.
- the etch rate was decreased from 35 ⁇ m/min to 27-28 ⁇ m/min of which time is called as an optimization time. That is, it is time to minimize loss which can be caused during the etching process by using the composition of Example 1.
- a particular etch rate was maintained in Example 1 so that it was used for more than 51 hours.
- the first drop in etchability was appeared with the composition of Comparison Example. The etch rate was decreased from 32 ⁇ m/min to 27 ⁇ m/min. It was note that the etch rate was about late 20' s and dropped to about 23-24 ⁇ m/min at the optimization time of Fig. 1. This may cause huge loss in productivity.
- Example 1 In order to compare surface qualities, a dimple defect experiment was performed with the compositions of Example 1 and Comparison Example.
- Diste defect is defect caused by a microscopic feature or bump which becomes bigger and sparkling after etching. As shown in Fig. 4, such a microscopic feature or bump looks bigger after etching. Table 4
- the scribe pressure indicates a certain pressure such as 0.01MPa and 0.05MPa, as in Table 4, to create a dimple on purpose on a glass surface.
- Example 4 the dimple of Example 1 , in which NH 4 HF 2 is used, looks less expanded than that of Comparison Example, in which NH 4 F is used.
- the etchant composition for glass substrates according to embodiments exhibits superior etch rate, etch duration time and quality of etched glass surfaces.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Surface Treatment Of Glass (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
Abstract
It relates to an etchant composition for glass substrates and more particularly, to an etchant composition including 10-45wt% of an inorganic salt including fluorine to the total weight of the composition; 1-10wt% of NH4HF2; 1-10wt% of an acid having a lower acid dissociation constant (pKa) than the inorganic salt including fluorine; and water to make the total weight of the composition be 100wt%, in which the etchant composition for glass substrates allows reduced complexity and manufacturing cost by using simple elements, provides high etch rate, etches the surface of a glass substrate smoothly, exhibits excellent etchability, and improves image quality.
Description
[DESCRIPTION] [Invention Title]
ETCHANT COMPOSITION FOR GLASS SUBSTRATE
[Technical Field]
It relates to an etchant composition for glass substrates and more particularly, to an etchant composition for glass substrates, which allows high etch rate for glass substrates, etching the surface of glass substrates smoothly, and maintaining etchability.
[Background Art]
TFT-LCD (Thin Film Transistor-Liquid Crystal Display) is a variant of liquid crystal display, which is used in wrist watches, calculators, mobile phones and other character graphic display devices, etc. and has higher visibility than CRT, about 30-40% of average power consumption compared to CRT, and low heating value. Further, LCD flat panel display devices have been recently widely used and studied since they provide excellent image quality and use very small amount of power. There are portability requirements such as reducing weights and sizes for TVs, laptops, and mobile phones equipped with LCD which people like to carry all the time.
There are many ways to reduce sizes and weights of LCDs and some are already being used. However, other components except LCDs and boards have been reached to
the limits for reducing sizes. Researches on reducing weight of a glass substrate which is a basic element of LCD have increased. Here, reducing weight of a glass substrate is making thickness be thinner.
When a thin glass is used from the beginning, all the process lines and processes which are currently used have to be changed or modified. For the present, a method, which adheres color filter(C/F) and TFT panel each other and etches both sides at the same time, is being used
A chemical polishing agent including a perfluorocompound, an inorganic acid, an organic acid, a sulfonic acid-based surfactant and an amine-based surfactant is known as an etchant composition for glass substrates. However, it does not teach each element's content of the composition and may be complicated due to many elements' use.
Therefore, it is highly demanded to develop novel etchant compositions which reduce the complexity by using simple elements and exhibit good etchability.
[Disclosure] [Technical Solution]
It provides an etchant composition for glass substrates, which allows high etch rate for glass substrates, etching the surface of glass substrates smoothly, and maintaining etchability.
An aspect of embodiment is to provide an etchant composition for glass substrates including: 10-45wt% of an inorganic salt including fluorine to the total weight of the etchant composition; l-10wt% Of NH4HF2; l-10wt% of an acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine; and water to make the total weight of the composition be 100wt%.
According to an embodiment, the inorganic salt including fluorine may be at least one chosen from HF, NaF, KF, KBF4 and NaBF4.
According to an embodiment, the acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine may be at least one chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid.
Another aspect of embodiments is to provide an etchant composition for glass substrates including: 10-45wt% of at least one compound chosen from HF, NaF, KF, KBF4 and NaBF4 with respect to the total weight of the composition; l-10wt% of NH4HF2; l-10wt% of at least one inorganic acid chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid; and water to make the total weight of the composition be 100wt%.
According to an embodiment, the etchant composition for glass substrates may further include a surfactant. According to an embodiment, the surfactant is at least one chosen from
ammonium fluoroalkyl sulfonimide, polyethylene glycol mono[4-(l,l,3,3-tetramethylbutyl)phenyl]ether, dodecylbenzene sulfonic acid, dodecylpyridinium chloride (DPC), CnF2n+1CH2CH2SO3-NH4 +, CnF2n+1CH2CH2SO3H, (CnF2n+1CH2CH2O)xPO(ONH4 +)y(OCH2CH2OH)z, CnF2n+ICH2CH2OPO(OCH2CH2OH)(OH), CnF2n+ISO2N(C2H5)(CH2CH3),
CnF2n+ICH2CH2OCH(OH)CH2CH2N(CnF2n+O2 and
CnF2n+1CH2CH2OCH2(OCH2CH2)nCH2CH2N(CnF2n+1)2, in which n is an integer of 1 to 20 and x, y and z is an integer of x+y+z = 3.
According to an embodiment, the surfactant may be added by 0.001 to 1 wt% to the total weight of the etchant composition.
[Description of Drawings]
Fig. 1 illustrates etch duration time according to Example 1. Fig. 2 illustrates etch duration time according to Comparison Example. Fig. 3 is experimental standards for testing quality of the surface of an etched glass according to an embodiment.
Fig. 4 is a photograph illustrating dimple defect.
Figs. 5 to 8 are photographs illustrating differences in the dimple defect according to Example 1. Figs. 9 to 12 are photographs illustrating differences in the dimple defect
according to Comparison Example.
[Mode for Invention]
The etchant composition will be described below in more detail. According to an embodiment, a glass substrate in an etchant composition for glass substrates may be any material composed with glass, for example glass substrates for LCDs and display boards such as PDP (Plasma Display Panel), ELD (Electroluminescent Display) and the like.
An etchant composition for glass substrates may include 10-45wt% of an inorganic salt including fluorine to the total weight of the etchant composition; l-10wt%
OfNH4HF2; l-10wt% of an acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine; and water to make the total weight of the composition be 100wt%. Here, the inorganic salt including fluorine is an essential component for etching glass substrates and may be at least one chosen from HF, NaF, KF, KBF4 and NaBF4, preferably HF. It may be used alone or in a combination of two or more.
The inorganic salt including fluorine may be added by 10 to 45wt% to the total weight of the etchant composition, preferably 20 to 42wt%, more preferably 30 to
42wt%. When more than 45wt% of the inorganic salt is added, even though an etch rate may increase, the surface of a glass substrate may not be smooth, causing deterioration of sustainability of the etchant composition and when less than 10wt% is used, an etch
rate may significantly decrease.
A content Of NH4HF2 may be 1 to 10wt% to the total weight of the etchant composition. When it is used more than 10wt%, an etch rate may decrease and when it is used less than 1 wt%, the surface of a glass substrate may not be smooth. According to an embodiment, the acid having a lower acid dissociation constant(pKa) than the inorganic salt including fluorine may remove remnants produced during the etching process and improve an etch rate. It may be at least one chosen from phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid, preferably hydrochloric acid. The acid may be added by 1 to 10wt% to the total weight of the etchant composition. When it is used more than 10wt%, an ability to remove defects of a glass substrate may be decreased and when it is used less than 1 wt%, an etch rate may significantly decrease and it may not remove remnants sufficiently.
According to an embodiment, the etchant composition for glass substrates may further include a surfactant. The surfactant may improve uniformity of an etch rate as well as smoothness since it increase adhesiveness between the etchant and the glass substrate to accelerate a reaction rate on the surface of the glass substrate.
The surfactant may be at least one chosen from ammonium fluoroalkyl sulfonimide, polyethylene glycol mono[4-(l,l,3,3-tetramethylbutyl)phenyl]ether, dodecylbenzene sulfonic acid, dodecylpyridinium chloride (DPC),
CnF2n+1CH2CH2SO3-NH4 +, CnF2IVnCH2CH2SO3H, (CnF 2n+l
CH2CH2O)xPO(ONH4 +)y(OCH2CH2OH)z, CnF2n+1CH2CH2OPO(OCH2CH2OH)(OH), CnF2n+1SO2N(C2H5)(CH2CH3), CnF2n+1CH2CH2OCH(OH)CH2CH2N(CnF2n+O2 and CnF2n+1 CH2CH2OCH2(OCH2CH2)nCH2CH2N(CnF2n+1)2, in which n is an integer of 1 to 20 and x, y and z is an integer of x+y+z = 3, but be not limited thereto. The surfactant may be added by 0.001 to lwt% to the total weight of the etchant composition. When it is used more than lwt%, it may not be economical since it does not further increase an etch rate and the uniformity.
Hereinafter, although more detailed descriptions will be given by examples, those are only for explanation and there is no intention to limit the invention.
Example. Preparation of an etchant composition for glass substrates
Etchant compositions for a glass substrate including the components in Table 1 were prepared by using cone. 55% of HF, cone. 35% of HCl and cone. 98% OfNH4HF2.
Table 1
Comparison Example. Preparation of an etchant composition for glass substrates
An etchant composition for a glass substrate including the components in Table 2 was prepared by using cone. 55% of HF, cone. 35% of HCl and cone. 98% of NH4HF2.
Table 2
Experimental Example 1. Comparison of etch rates and uniformities of etched glasses Experimental conditions and definition
An E2K Glass of Samsung Corning Precision Glass Co., Ltd, which is adhered with C/F side and TFT side having a size of 550mm X 650mm, was used as a glass
substrate.
An etch rate(E/R) is a value expressing an etched amount per 1 minute to be proportional to time when a glass is etched with an etchant composed with a particular composition. For example, after a glass having a thickness of lOOOμm(l.Ot) was etched for 10 minutes, if the thickness of the glass was 600μm(0.6t), the etch rate was
40μm/min derived from (1000μm-600μm)/10min.
Experimental data of Examples and Comparison Example
Table 3
Experimental Example 2. Comparison of etch duration times
Fig. 1 is data showing etch duration time of Example 1 and Fig. 2 is data showing etch duration time of Comparison Example. The etch duration time was measured every hour for 49 or 51 hours. After preparing each etchant composition of Example 1 and Comparison Example, respectively, a glass was etched for 15 minutes every hour. Then an etch rate was calculated by comparing thicknesses before and after etching. A temperature was maintained at 30°C and error was ±1 °C during the experiment.
As shown in Fig. 1, etchability was decreased after 36 hours in Example 1. After 36 hours, the etch rate was decreased from 35μm/min to 27-28μm/min of which time is called as an optimization time. That is, it is time to minimize loss which can be caused during the etching process by using the composition of Example 1. However, even after this time, a particular etch rate was maintained in Example 1 so that it was used for more than 51 hours. On the other hand, as shown in Fig. 2, the first drop in etchability was appeared
with the composition of Comparison Example. The etch rate was decreased from 32μm/min to 27μm/min. It was note that the etch rate was about late 20' s and dropped to about 23-24μm/min at the optimization time of Fig. 1. This may cause huge loss in productivity.
It was noted that stability and etch rate was significantly better when NH4HF2 of Example 1 was used than that when NH4F of Comparison Example was used.
Experimental Example 3. Comparison of quality of etched glass surfaces
Experimental conditions and definition Apparatus : L2200QCFCB (550mmX650mm) Size
Thickness 600μm : 1.Ot => 0.6t (lOOOμm => 600μm)
As shown in Fig. 3, changing points were minimized by detecting each glass at the same point (0) and preparing a SEM sample at the same point.
Example and Comparison Example : Experimental data
In order to compare surface qualities, a dimple defect experiment was performed with the compositions of Example 1 and Comparison Example.
"Dimple defect" is defect caused by a microscopic feature or bump which becomes bigger and sparkling after etching. As shown in Fig. 4, such a microscopic feature or bump looks bigger after etching.
Table 4
The scribe pressure indicates a certain pressure such as 0.01MPa and 0.05MPa, as in Table 4, to create a dimple on purpose on a glass surface.
As shown in Table 4, the dimple of Example 1 , in which NH4HF2 is used, looks less expanded than that of Comparison Example, in which NH4F is used.
Experimental result of Example 1 is shown in Figs. 5 to 8 and that of
Comparison Example is shown in Figs. 9 to 12.
As described above, the etchant composition for glass substrates according to embodiments exhibits superior etch rate, etch duration time and quality of etched glass surfaces.
While it has been described with reference to particular embodiments, it is to be appreciated that various changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the embodiment herein, as defined by the appended claims and their equivalents.
Claims
[CLAIMS] [Claim 1 ]
An etchant composition for glass substrates comprising:
10-45wt% of an inorganic salt comprising fluorine to the total weight of the composition; l-10wt% OfNH4HF2; l-10wt% of an acid having a lower acid dissociation constant(pKa) than the inorganic salt comprising fluorine; and water to make the total weight of the composition be 100wt%.
[Claim 2]
The etchant composition of Claim 1, wherein the inorganic salt comprising fluorine is at least one selected from the group consisting of HF, NaF, KF, KBF4 and NaBF4.
[Claim 3]
The etchant composition of Claim 1, wherein the acid having a lower acid dissociation constant(pKa) than the inorganic salt comprising fluorine is at least one selected from the group consisting of phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid.
[Claim 4]
An etchant composition for glass substrates comprising: 10-45wt% of at least one compound selected from the group consisting of HF, NaF, KF, KBF4 and NaBF4 with respect to the total weight of the composition; 
l-10wt% of at least one inorganic acid selected from the group consisting of phosphoric acid, hydrobromic acid, nitric acid, sulfuric acid, hydrochloric acid, and perchloric acid; and water to make the total weight of the composition be 100wt%.
[Claim 5]
The etchant composition of Claim 1, further comprising a surfactant.
[Claim 6]
The etchant composition of Claim 5, wherein the surfactant is at least one selected from the group consisting of ammonium fluoroalkyl sulfonimide, polyethylene glycol mono[4-(l,l,3,3-tetramethylbutyl)phenyl]ether, dodecylbenzene sulfonic acid, dodecylpyridinium chloride (DPC), CnF2n+1CH2CH2SO3TS[H4 +, CnF2n+1CH2CH2SO3H, (CnF2n+1CH2CH2O)xPO(ONH4 +)y(OCH2CH2OH)z, CnF2n+1CH2CH2OPO(OCH2CH2OH)(OH), CnF2n+1SO2N(C2H5)(CH2CH3),
CnF2n+1CH2CH2OCH(OH)CH2CH2N(CnF2n+O2 and
CnF2n+1CH2CH2OCH2(OCH2CH2)nCH2CH2N(CnF2n+1)2, in which n is an integer of 1 to 20 and x, y and z is an integer of x+y+z - 3.
[Claim 7]
The etchant composition of Claim 5, wherein the surfactant is added by 0.001 to 1 wt% to the total weight of the etchant composition.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070124792A KR100868228B1 (en) | 2007-12-04 | 2007-12-04 | Etch solution composition for glass substrate |
| KR10-2007-0124792 | 2007-12-04 |
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| Publication Number | Publication Date |
|---|---|
| WO2009072810A2 true WO2009072810A2 (en) | 2009-06-11 |
| WO2009072810A3 WO2009072810A3 (en) | 2009-09-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2008/007143 Ceased WO2009072810A2 (en) | 2007-12-04 | 2008-12-03 | Etchant composition for glass substrate |
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| KR (1) | KR100868228B1 (en) |
| WO (1) | WO2009072810A2 (en) |
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| TWI506002B (en) * | 2011-03-14 | 2015-11-01 | Novatech Co Ltd | Method of manufacturing ultra slim panel |
| US9278886B2 (en) | 2010-11-30 | 2016-03-08 | Corning Incorporated | Methods of forming high-density arrays of holes in glass |
| US10756003B2 (en) | 2016-06-29 | 2020-08-25 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
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| US9488857B2 (en) | 2014-01-10 | 2016-11-08 | Corning Incorporated | Method of strengthening an edge of a glass substrate |
| KR102269921B1 (en) * | 2014-03-31 | 2021-06-28 | 삼성디스플레이 주식회사 | Composition for glass reinforcing and manufacturing method of touch screen glass using thereof |
| KR102079042B1 (en) * | 2016-07-04 | 2020-02-20 | 오씨아이 주식회사 | Etching solution for silicon substrate |
| KR102087703B1 (en) * | 2019-04-08 | 2020-03-11 | (주)혜덕 | Etchant composition for manufacturing blackboard glass and method of manuacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100415261B1 (en) * | 1998-03-26 | 2004-03-26 | 이기원 | Electronic display device and cleaning and etching composition for substrate |
| JP2000164586A (en) * | 1998-11-24 | 2000-06-16 | Daikin Ind Ltd | Etching liquid |
| JP5132859B2 (en) * | 2001-08-24 | 2013-01-30 | ステラケミファ株式会社 | Micro-processed surface treatment liquid for glass substrates with multiple components |
| KR101247246B1 (en) * | 2004-10-14 | 2013-03-25 | 주식회사 동진쎄미켐 | Etching composition for tft lcd |
| KR100938301B1 (en) * | 2005-01-31 | 2010-01-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Etchant treatment processes for substrate surfaces and chamber surfaces |
| KR100677052B1 (en) * | 2005-06-17 | 2007-02-02 | 테크노세미켐 주식회사 | Etching liquid composition for liquid crystal glass substrate |
-
2007
- 2007-12-04 KR KR1020070124792A patent/KR100868228B1/en active Active
-
2008
- 2008-12-03 WO PCT/KR2008/007143 patent/WO2009072810A2/en not_active Ceased
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| US9278886B2 (en) | 2010-11-30 | 2016-03-08 | Corning Incorporated | Methods of forming high-density arrays of holes in glass |
| US9802855B2 (en) | 2010-11-30 | 2017-10-31 | Corning Incorporated | Methods of forming high-density arrays of holes in glass |
| TWI506002B (en) * | 2011-03-14 | 2015-11-01 | Novatech Co Ltd | Method of manufacturing ultra slim panel |
| CN103797405A (en) * | 2011-07-07 | 2014-05-14 | 康宁股份有限公司 | Surface flaw modification for strengthening of glass articles |
| TWI457308B (en) * | 2012-08-17 | 2014-10-21 | ||
| US11114309B2 (en) | 2016-06-01 | 2021-09-07 | Corning Incorporated | Articles and methods of forming vias in substrates |
| TWI761355B (en) * | 2016-06-29 | 2022-04-21 | 美商康寧公司 | Inorganic wafer having through-holes attached to semiconductor wafer |
| US10756003B2 (en) | 2016-06-29 | 2020-08-25 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
| US11774233B2 (en) | 2016-06-29 | 2023-10-03 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
| US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
| US11062986B2 (en) | 2017-05-25 | 2021-07-13 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
| US11972993B2 (en) | 2017-05-25 | 2024-04-30 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
| US12180108B2 (en) | 2017-12-19 | 2024-12-31 | Corning Incorporated | Methods for etching vias in glass-based articles employing positive charge organic molecules |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR100868228B1 (en) | 2008-11-11 |
| WO2009072810A3 (en) | 2009-09-03 |
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