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WO2008120531A1 - 気化器，気化モジュール，成膜装置 - Google Patents

気化器，気化モジュール，成膜装置 Download PDF

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Publication number
WO2008120531A1
WO2008120531A1 PCT/JP2008/054118 JP2008054118W WO2008120531A1 WO 2008120531 A1 WO2008120531 A1 WO 2008120531A1 JP 2008054118 W JP2008054118 W JP 2008054118W WO 2008120531 A1 WO2008120531 A1 WO 2008120531A1
Authority
WO
WIPO (PCT)
Prior art keywords
vaporization
raw material
liquid
vaporizer
flow path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054118
Other languages
English (en)
French (fr)
Inventor
Sumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN2008800088829A priority Critical patent/CN101641459B/zh
Priority to KR1020097019605A priority patent/KR101187492B1/ko
Publication of WO2008120531A1 publication Critical patent/WO2008120531A1/ja
Anticipated expiration legal-status Critical
Priority to US12/563,672 priority patent/US8197601B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　本発明にかかる気化器３００は，ブロック状の気化モジュール３１０を複数連結してなり，各気化モジュールは，液状原料の吐出口と，吐出口から吐出された液状原料を気化させて原料ガスを生成する気化室３７０と，他の気化モジュールと結合される結合面を貫通して形成される液状原料流路３２０と，液状原料流路の途中に連通し，その流路を流れる液状原料を吐出口に導く噴霧ノズルとを備え，各気化モジュールがその結合面で他の気化モジュールと結合されることにより，各気化モジュールの液状原料流路がすべて連通するように構成した。これによれば，小流量から大流量まで様々な原料ガスの流量が要求される場合に，気化器の構成を気化効率を低下させずにその原料ガス流量に応じて簡単に変更できる。
PCT/JP2008/054118 2007-03-20 2008-03-07 気化器，気化モジュール，成膜装置 Ceased WO2008120531A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800088829A CN101641459B (zh) 2007-03-20 2008-03-07 气化器、气化组件、成膜装置
KR1020097019605A KR101187492B1 (ko) 2007-03-20 2008-03-07 기화기, 기화 모듈, 성막 장치
US12/563,672 US8197601B2 (en) 2007-03-20 2009-09-21 Vaporizer, vaporization module and film forming apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007073464A JP5213341B2 (ja) 2007-03-20 2007-03-20 気化器，気化モジュール，成膜装置
JP2007-073464 2007-03-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/563,672 Continuation US8197601B2 (en) 2007-03-20 2009-09-21 Vaporizer, vaporization module and film forming apparatus

Publications (1)

Publication Number Publication Date
WO2008120531A1 true WO2008120531A1 (ja) 2008-10-09

Family

ID=39808115

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054118 Ceased WO2008120531A1 (ja) 2007-03-20 2008-03-07 気化器，気化モジュール，成膜装置

Country Status (6)

Country Link
US (1) US8197601B2 (ja)
JP (1) JP5213341B2 (ja)
KR (1) KR101187492B1 (ja)
CN (1) CN101641459B (ja)
TW (1) TW200914645A (ja)
WO (1) WO2008120531A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5426616B2 (ja) * 2011-07-15 2014-02-26 株式会社リンテック 気化器及び該気化器を備えた液体原料気化供給装置
FR2981667B1 (fr) * 2011-10-21 2014-07-04 Riber Systeme d'injection pour dispositif de depot de couches minces par evaporation sous vide
KR101330725B1 (ko) * 2011-10-28 2013-11-20 (주)지오엘리먼트 기화시스템 및 바텀 시스템
KR101388225B1 (ko) * 2011-12-02 2014-04-23 주식회사 케이씨텍 증착장치의 기화기
WO2013126323A1 (en) * 2012-02-23 2013-08-29 Applied Materials, Inc. Method and apparatus for precursor delivery
JP6078335B2 (ja) * 2012-12-27 2017-02-08 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム
US9527107B2 (en) 2013-01-11 2016-12-27 International Business Machines Corporation Method and apparatus to apply material to a surface
JP6203207B2 (ja) * 2015-02-03 2017-09-27 株式会社リンテック 気化器
KR102584113B1 (ko) * 2015-11-10 2023-10-04 도쿄엘렉트론가부시키가이샤 기화기, 성막 장치 및 온도 제어 방법
KR20180027780A (ko) * 2016-09-07 2018-03-15 주성엔지니어링(주) 기화기
JP7154850B2 (ja) * 2017-09-19 2022-10-18 株式会社堀場エステック 濃度制御装置及び材料ガス供給装置
US10943768B2 (en) * 2018-04-20 2021-03-09 Applied Materials, Inc. Modular high-frequency source with integrated gas distribution
KR102237347B1 (ko) * 2018-12-17 2021-04-07 (주)에이텍솔루션 고효율 유로형상을 가지는 반도체 증착용 기화기
US11661653B2 (en) * 2019-12-18 2023-05-30 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Vapor delivery systems for solid and liquid materials
JP7716740B2 (ja) * 2021-07-14 2025-08-01 株式会社リンテック 気化器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622081A (ja) * 1985-06-10 1987-01-08 エムコ−ル，インコ−ポレイテツド モジユ−ル式ガス取扱装置
JP2001153299A (ja) * 1999-11-29 2001-06-08 Air Water Inc 集積型ガス供給ユニット用モジュールブロック
JP2001262350A (ja) * 2000-01-14 2001-09-26 Tokyo Electron Ltd 処理装置
JP2002173778A (ja) * 2000-12-04 2002-06-21 Japan Pionics Co Ltd 気化器
JP2007046084A (ja) * 2005-08-08 2007-02-22 Lintec Co Ltd 気化器並びにこれを用いた液体気化供給装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714091A (en) * 1985-06-10 1987-12-22 Emcore, Inc. Modular gas handling apparatus
JPH03118493A (ja) 1989-09-30 1991-05-21 Kubota Corp 測距用の超音波センサ
JP3047241B2 (ja) 1989-10-11 2000-05-29 日立電子エンジニアリング株式会社 液状半導体形成材料気化供給装置
JP3118493B2 (ja) 1993-04-27 2000-12-18 菱電セミコンダクタシステムエンジニアリング株式会社 液体原料用ｃｖｄ装置
JPH0794426A (ja) 1993-09-24 1995-04-07 Ryoden Semiconductor Syst Eng Kk Ｃｖｄ装置
JP3577963B2 (ja) 1998-08-06 2004-10-20 三菱電機株式会社 Ｃｖｄ用液体原料の気化方法、気化装置及びそれを用いたｃｖｄ装置
JP2001153229A (ja) * 1999-11-30 2001-06-08 Nichias Corp 中空金属ｏリング
JP4316341B2 (ja) 2003-10-01 2009-08-19 東京エレクトロン株式会社 気化器及び成膜装置
JP2006152395A (ja) * 2004-11-30 2006-06-15 Fuji Photo Film Co Ltd 真空蒸着方法および真空蒸着装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622081A (ja) * 1985-06-10 1987-01-08 エムコ−ル，インコ−ポレイテツド モジユ−ル式ガス取扱装置
JP2001153299A (ja) * 1999-11-29 2001-06-08 Air Water Inc 集積型ガス供給ユニット用モジュールブロック
JP2001262350A (ja) * 2000-01-14 2001-09-26 Tokyo Electron Ltd 処理装置
JP2002173778A (ja) * 2000-12-04 2002-06-21 Japan Pionics Co Ltd 気化器
JP2007046084A (ja) * 2005-08-08 2007-02-22 Lintec Co Ltd 気化器並びにこれを用いた液体気化供給装置

Also Published As

Publication number Publication date
JP2008231515A (ja) 2008-10-02
TW200914645A (en) 2009-04-01
KR20100014494A (ko) 2010-02-10
CN101641459B (zh) 2011-06-08
KR101187492B1 (ko) 2012-10-02
US8197601B2 (en) 2012-06-12
CN101641459A (zh) 2010-02-03
US20100006033A1 (en) 2010-01-14
JP5213341B2 (ja) 2013-06-19

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