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WO2008152889A1 - 光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器 - Google Patents

光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器 Download PDF

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Publication number
WO2008152889A1
WO2008152889A1 PCT/JP2008/059342 JP2008059342W WO2008152889A1 WO 2008152889 A1 WO2008152889 A1 WO 2008152889A1 JP 2008059342 W JP2008059342 W JP 2008059342W WO 2008152889 A1 WO2008152889 A1 WO 2008152889A1
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WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion element
image sensor
manufacturing
radiographic image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2008/059342
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English (en)
French (fr)
Inventor
Tomoo Izumi
Satoshi Masuda
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Konica Minolta Inc
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Konica Minolta Inc
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Priority to JP2009519203A priority Critical patent/JP5141685B2/ja
Publication of WO2008152889A1 publication Critical patent/WO2008152889A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/81—Camera processing pipelines; Components thereof for suppressing or minimising disturbance in the image signal generation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　本発明は、有機材料を用いながら暗電流の少ない光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器を提供する。かかる光電変換素子は、支持基板の上に透明電極と、透明電極を透過した光を吸収し電荷分離を行う有機半導体からなる光電変換層と、光電変換層を挟んで透明電極と反対側に設けられた対電極と、を有する光電変換素子であって、光電変換層と対電極の間に電極酸化膜を有する。
PCT/JP2008/059342 2007-06-11 2008-05-21 光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器 Ceased WO2008152889A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009519203A JP5141685B2 (ja) 2007-06-11 2008-05-21 光電変換素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007153764 2007-06-11
JP2007-153764 2007-06-11

Publications (1)

Publication Number Publication Date
WO2008152889A1 true WO2008152889A1 (ja) 2008-12-18

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PCT/JP2008/059342 Ceased WO2008152889A1 (ja) 2007-06-11 2008-05-21 光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器

Country Status (2)

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JP (1) JP5141685B2 (ja)
WO (1) WO2008152889A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010090123A1 (ja) * 2009-02-04 2010-08-12 コニカミノルタホールディングス株式会社 有機光電変換素子、それを用いた太陽電池、及び光センサアレイ
JP2010177565A (ja) * 2009-01-30 2010-08-12 Fujifilm Corp 光電変換素子の製造方法
WO2010110164A1 (ja) * 2009-03-26 2010-09-30 コニカミノルタホールディングス株式会社 有機光電変換素子、それを用いた太陽電池及び光センサアレイ
JP2010238794A (ja) * 2009-03-30 2010-10-21 Dainippon Printing Co Ltd 有機薄膜太陽電池及びその製造方法
JP2011108951A (ja) * 2009-11-19 2011-06-02 Mitsubishi Chemicals Corp 半導体溶液の製造方法及びそれを用いた光電変換素子
JP2012231062A (ja) * 2011-04-27 2012-11-22 Asahi Kasei Corp アセン系化合物を利用した有機薄膜太陽電池
JP2012234945A (ja) * 2011-04-28 2012-11-29 Konica Minolta Holdings Inc 有機光電変換素子およびその製造方法
JP2013115084A (ja) * 2011-11-25 2013-06-10 Rohm Co Ltd 有機薄膜太陽電池およびその製造方法
WO2013176056A1 (ja) * 2012-05-24 2013-11-28 富士フイルム株式会社 光電変換素子および撮像素子、ならびに、光電変換素子の製造方法および撮像素子の製造方法
JP2014501443A (ja) * 2010-12-20 2014-01-20 ソルベイ アセトウ ゲーエムベーハー 光電池モジュール
JP2014521207A (ja) * 2011-07-04 2014-08-25 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 暗電流又はリーク電流を制御するためのキャパシタを含むフォトダイオード装置
JP2016149443A (ja) * 2015-02-12 2016-08-18 株式会社日立製作所 放射線検出素子、放射線検出器および核医学診断装置ならびに放射線検出素子の製造方法
US10041748B2 (en) 2011-12-22 2018-08-07 3M Innovative Properties Company Carbon coated articles and methods for making the same

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105744A (en) * 1980-12-23 1982-07-01 Canon Inc Photoconductive member
JPH01187983A (ja) * 1988-01-22 1989-07-27 Fujitsu Ltd フォトダイオードの製造方法
JPH11274602A (ja) * 1998-03-19 1999-10-08 Kawamura Inst Of Chem Res 光半導体素子
JP2000345321A (ja) * 1999-05-31 2000-12-12 Kawamura Inst Of Chem Res 光半導体素子
JP2001320039A (ja) * 2000-05-11 2001-11-16 Canon Inc 光電変換装置
JP2002270923A (ja) * 2001-03-14 2002-09-20 Kawamura Inst Of Chem Res 光半導体素子、及びその製造方法
JP2003101060A (ja) * 2001-09-20 2003-04-04 National Institute Of Advanced Industrial & Technology 有機光電流増幅素子及びその製造方法
WO2003081609A1 (fr) * 2002-03-26 2003-10-02 Fujikura Ltd. Verre conducteur et dispositif de conversion photoelectrique mettant en oeuvre ce verre
JP2003298152A (ja) * 2002-04-01 2003-10-17 Sharp Corp ヘテロ接合素子
JP2005236278A (ja) * 2004-01-23 2005-09-02 Kyoto Univ 有機光電変換デバイス及び有機太陽電池
JP2006286434A (ja) * 2005-04-01 2006-10-19 Kansai Pipe Kogyo Kk 色素増感型太陽電池用電極基板、色素増感型太陽電池用光電極および対向電極、ならびに色素増感型太陽電池

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5040057B2 (ja) * 2004-09-03 2012-10-03 コニカミノルタエムジー株式会社 光電変換素子の製造方法および放射線画像検出器の製造方法
JP2006245073A (ja) * 2005-02-28 2006-09-14 Dainippon Printing Co Ltd 有機薄膜太陽電池
WO2007029750A1 (ja) * 2005-09-06 2007-03-15 Kyoto University 有機薄膜光電変換素子及びその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105744A (en) * 1980-12-23 1982-07-01 Canon Inc Photoconductive member
JPH01187983A (ja) * 1988-01-22 1989-07-27 Fujitsu Ltd フォトダイオードの製造方法
JPH11274602A (ja) * 1998-03-19 1999-10-08 Kawamura Inst Of Chem Res 光半導体素子
JP2000345321A (ja) * 1999-05-31 2000-12-12 Kawamura Inst Of Chem Res 光半導体素子
JP2001320039A (ja) * 2000-05-11 2001-11-16 Canon Inc 光電変換装置
JP2002270923A (ja) * 2001-03-14 2002-09-20 Kawamura Inst Of Chem Res 光半導体素子、及びその製造方法
JP2003101060A (ja) * 2001-09-20 2003-04-04 National Institute Of Advanced Industrial & Technology 有機光電流増幅素子及びその製造方法
WO2003081609A1 (fr) * 2002-03-26 2003-10-02 Fujikura Ltd. Verre conducteur et dispositif de conversion photoelectrique mettant en oeuvre ce verre
JP2003298152A (ja) * 2002-04-01 2003-10-17 Sharp Corp ヘテロ接合素子
JP2005236278A (ja) * 2004-01-23 2005-09-02 Kyoto Univ 有機光電変換デバイス及び有機太陽電池
JP2006286434A (ja) * 2005-04-01 2006-10-19 Kansai Pipe Kogyo Kk 色素増感型太陽電池用電極基板、色素増感型太陽電池用光電極および対向電極、ならびに色素増感型太陽電池

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177565A (ja) * 2009-01-30 2010-08-12 Fujifilm Corp 光電変換素子の製造方法
JPWO2010090123A1 (ja) * 2009-02-04 2012-08-09 コニカミノルタホールディングス株式会社 有機光電変換素子、それを用いた太陽電池、及び光センサアレイ
WO2010090123A1 (ja) * 2009-02-04 2010-08-12 コニカミノルタホールディングス株式会社 有機光電変換素子、それを用いた太陽電池、及び光センサアレイ
JP5360197B2 (ja) * 2009-03-26 2013-12-04 コニカミノルタ株式会社 有機光電変換素子、それを用いた太陽電池及び光センサアレイ
WO2010110164A1 (ja) * 2009-03-26 2010-09-30 コニカミノルタホールディングス株式会社 有機光電変換素子、それを用いた太陽電池及び光センサアレイ
JP2010238794A (ja) * 2009-03-30 2010-10-21 Dainippon Printing Co Ltd 有機薄膜太陽電池及びその製造方法
JP2011108951A (ja) * 2009-11-19 2011-06-02 Mitsubishi Chemicals Corp 半導体溶液の製造方法及びそれを用いた光電変換素子
JP2014501443A (ja) * 2010-12-20 2014-01-20 ソルベイ アセトウ ゲーエムベーハー 光電池モジュール
JP2012231062A (ja) * 2011-04-27 2012-11-22 Asahi Kasei Corp アセン系化合物を利用した有機薄膜太陽電池
JP2012234945A (ja) * 2011-04-28 2012-11-29 Konica Minolta Holdings Inc 有機光電変換素子およびその製造方法
JP2014521207A (ja) * 2011-07-04 2014-08-25 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 暗電流又はリーク電流を制御するためのキャパシタを含むフォトダイオード装置
JP2013115084A (ja) * 2011-11-25 2013-06-10 Rohm Co Ltd 有機薄膜太陽電池およびその製造方法
US10041748B2 (en) 2011-12-22 2018-08-07 3M Innovative Properties Company Carbon coated articles and methods for making the same
WO2013176056A1 (ja) * 2012-05-24 2013-11-28 富士フイルム株式会社 光電変換素子および撮像素子、ならびに、光電変換素子の製造方法および撮像素子の製造方法
JP2016149443A (ja) * 2015-02-12 2016-08-18 株式会社日立製作所 放射線検出素子、放射線検出器および核医学診断装置ならびに放射線検出素子の製造方法

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JPWO2008152889A1 (ja) 2010-08-26

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