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WO2008078702A1 - 放射線検出器 - Google Patents

放射線検出器 Download PDF

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Publication number
WO2008078702A1
WO2008078702A1 PCT/JP2007/074721 JP2007074721W WO2008078702A1 WO 2008078702 A1 WO2008078702 A1 WO 2008078702A1 JP 2007074721 W JP2007074721 W JP 2007074721W WO 2008078702 A1 WO2008078702 A1 WO 2008078702A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion substrates
gap
radiation detector
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074721
Other languages
English (en)
French (fr)
Inventor
Shirofumi Yamagishi
Hitoshi Chiyoma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Canon Electron Tubes and Devices Co Ltd
Original Assignee
Toshiba Corp
Toshiba Electron Tubes and Devices Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electron Tubes and Devices Co Ltd filed Critical Toshiba Corp
Priority to EP07851073.2A priority Critical patent/EP2128651A4/en
Priority to JP2008528277A priority patent/JPWO2008078702A1/ja
Publication of WO2008078702A1 publication Critical patent/WO2008078702A1/ja
Priority to US12/490,462 priority patent/US7772562B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20181—Stacked detectors, e.g. for measuring energy and positional information
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Medical Informatics (AREA)
  • Radiology & Medical Imaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Optics & Photonics (AREA)
  • Surgery (AREA)
  • Animal Behavior & Ethology (AREA)
  • Pathology (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biophysics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

　複数の光電変換基板（１４）の受光部（１９）全体にわたってシンチレータ層（２１）を直接形成した放射線検出器（１１）において、隣り合う光電変換基板（１４）間に形成される隙間（Ｓ）及び段差（Ｄ）を、それら隙間（Ｓ及び段差（Ｄによる影響が光電変換素子の１個分の影響に相当する範囲内とする。すなわち、隣り合う光電変換基板（１４）間の隙間Ｓは１３３μｍ以下、隣り合う光電変換基板（１４）間の段差Ｄは１００μｍ以下とする。複数の光電変換基板（１４）の受光部（１９）全体にわたってシンチレータ層（２１）を直接形成でき、ＭＴＦや感度の劣化を防止し、製造コストも低減できる。
PCT/JP2007/074721 2006-12-27 2007-12-21 放射線検出器 Ceased WO2008078702A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07851073.2A EP2128651A4 (en) 2006-12-27 2007-12-21 Radiation detector
JP2008528277A JPWO2008078702A1 (ja) 2006-12-27 2007-12-21 放射線検出器
US12/490,462 US7772562B2 (en) 2006-12-27 2009-06-24 Radiation detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006351820 2006-12-27
JP2006-351820 2006-12-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/490,462 Continuation US7772562B2 (en) 2006-12-27 2009-06-24 Radiation detector

Publications (1)

Publication Number Publication Date
WO2008078702A1 true WO2008078702A1 (ja) 2008-07-03

Family

ID=39562491

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074721 Ceased WO2008078702A1 (ja) 2006-12-27 2007-12-21 放射線検出器

Country Status (7)

Country Link
US (1) US7772562B2 (ja)
EP (1) EP2128651A4 (ja)
JP (1) JPWO2008078702A1 (ja)
KR (1) KR20080114695A (ja)
CN (1) CN101389979A (ja)
TW (1) TW200842393A (ja)
WO (1) WO2008078702A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012509476A (ja) * 2008-11-21 2012-04-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ タイル型検出器の組み立て方法
JP2013152160A (ja) * 2012-01-25 2013-08-08 Canon Inc 放射線撮像装置及び放射線撮像システム
JP2014041063A (ja) * 2012-08-22 2014-03-06 Canon Inc 放射線撮像装置及び放射線撮像システム
KR20150008913A (ko) * 2012-05-18 2015-01-23 제네럴 일렉트릭 컴퍼니 타일형 x-선 이미저 패널 및 그 제조 방법
WO2022137844A1 (ja) * 2020-12-23 2022-06-30 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット
WO2022137843A1 (ja) * 2020-12-23 2022-06-30 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5559471B2 (ja) 2008-11-11 2014-07-23 浜松ホトニクス株式会社 放射線検出装置、放射線画像取得システム、放射線検査システム、及び放射線検出方法
JP5457118B2 (ja) 2009-09-18 2014-04-02 浜松ホトニクス株式会社 放射線検出装置
JP5295915B2 (ja) 2009-09-18 2013-09-18 浜松ホトニクス株式会社 放射線検出装置
JP5467830B2 (ja) 2009-09-18 2014-04-09 浜松ホトニクス株式会社 放射線検出装置
JP5905672B2 (ja) * 2011-06-28 2016-04-20 株式会社東芝 放射線検出器及びその製造方法
JP6671839B2 (ja) * 2014-10-07 2020-03-25 キヤノン株式会社 放射線撮像装置及び撮像システム
EP3214465A4 (en) * 2014-10-30 2017-11-15 Shimadzu Corporation Radiation detector

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Publication number Priority date Publication date Assignee Title
JPH09260626A (ja) * 1995-10-20 1997-10-03 Canon Inc 光電変換装置及びその作製方法及び物質透過撮像装置及び実装装置
JP2002048872A (ja) 2000-08-03 2002-02-15 Hamamatsu Photonics Kk 放射線検出器
JP2002048870A (ja) * 2000-08-03 2002-02-15 Hamamatsu Photonics Kk 放射線検出器およびシンチレータパネル
JP2002050754A (ja) * 2000-05-08 2002-02-15 Canon Inc 半導体装置とその製造方法、放射線検出装置とそれを用いた放射線検出システム

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US5464984A (en) * 1985-12-11 1995-11-07 General Imaging Corporation X-ray imaging system and solid state detector therefor
US6194726B1 (en) * 1994-12-23 2001-02-27 Digirad Corporation Semiconductor radiation detector with downconversion element
JP3347708B2 (ja) * 1999-08-04 2002-11-20 キヤノン株式会社 ２次元画像入力装置及びそれを用いた画像処理システム
US6792159B1 (en) * 1999-12-29 2004-09-14 Ge Medical Systems Global Technology Company, Llc Correction of defective pixels in a detector using temporal gradients
JP2003017676A (ja) * 2001-04-27 2003-01-17 Canon Inc 放射線撮像装置およびそれを用いた放射線撮像システム
US7189971B2 (en) * 2002-02-15 2007-03-13 Oy Ajat Ltd Radiation imaging device and system
US7247858B2 (en) * 2003-04-10 2007-07-24 Agfa Healthcare, N.V. Method for creating a contiguous image using multiple X-ray imagers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260626A (ja) * 1995-10-20 1997-10-03 Canon Inc 光電変換装置及びその作製方法及び物質透過撮像装置及び実装装置
JP2002050754A (ja) * 2000-05-08 2002-02-15 Canon Inc 半導体装置とその製造方法、放射線検出装置とそれを用いた放射線検出システム
JP2002048872A (ja) 2000-08-03 2002-02-15 Hamamatsu Photonics Kk 放射線検出器
JP2002048870A (ja) * 2000-08-03 2002-02-15 Hamamatsu Photonics Kk 放射線検出器およびシンチレータパネル

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2128651A4

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012509476A (ja) * 2008-11-21 2012-04-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ タイル型検出器の組み立て方法
JP2013152160A (ja) * 2012-01-25 2013-08-08 Canon Inc 放射線撮像装置及び放射線撮像システム
KR20150008913A (ko) * 2012-05-18 2015-01-23 제네럴 일렉트릭 컴퍼니 타일형 x-선 이미저 패널 및 그 제조 방법
JP2015522799A (ja) * 2012-05-18 2015-08-06 ゼネラル・エレクトリック・カンパニイ タイル貼り式ｘ線イメージャパネルおよびそれを形成する方法
KR102154133B1 (ko) 2012-05-18 2020-09-10 제네럴 일렉트릭 컴퍼니 타일형 x-선 이미저 패널 및 그 제조 방법
JP2014041063A (ja) * 2012-08-22 2014-03-06 Canon Inc 放射線撮像装置及び放射線撮像システム
WO2022137844A1 (ja) * 2020-12-23 2022-06-30 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット
WO2022137843A1 (ja) * 2020-12-23 2022-06-30 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット
JP2022099513A (ja) * 2020-12-23 2022-07-05 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット
JP2022099511A (ja) * 2020-12-23 2022-07-05 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット
JP7470631B2 (ja) 2020-12-23 2024-04-18 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット
JP7608148B2 (ja) 2020-12-23 2025-01-06 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット
US12386085B2 (en) 2020-12-23 2025-08-12 Hamamatsu Photonics K.K. Radiation detector, radiation detector manufacturing method, and scintillator panel unit
TWI898080B (zh) * 2020-12-23 2025-09-21 日商濱松赫德尼古斯股份有限公司 放射線檢測器、放射線檢測器的製造方法、以及閃爍板單元

Also Published As

Publication number Publication date
TW200842393A (en) 2008-11-01
CN101389979A (zh) 2009-03-18
US20100019162A1 (en) 2010-01-28
EP2128651A4 (en) 2017-03-22
US7772562B2 (en) 2010-08-10
EP2128651A1 (en) 2009-12-02
KR20080114695A (ko) 2008-12-31
JPWO2008078702A1 (ja) 2010-04-22

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