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WO2006056730A2 - Protection de surfaces exposees a des particules chargees - Google Patents

Protection de surfaces exposees a des particules chargees Download PDF

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Publication number
WO2006056730A2
WO2006056730A2 PCT/GB2005/003918 GB2005003918W WO2006056730A2 WO 2006056730 A2 WO2006056730 A2 WO 2006056730A2 GB 2005003918 W GB2005003918 W GB 2005003918W WO 2006056730 A2 WO2006056730 A2 WO 2006056730A2
Authority
WO
WIPO (PCT)
Prior art keywords
charged particles
source
deposits
coating
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2005/003918
Other languages
English (en)
Other versions
WO2006056730A3 (fr
Inventor
Robert Bruce Grant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOC Group Ltd
Original Assignee
BOC Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOC Group Ltd filed Critical BOC Group Ltd
Priority to JP2007542076A priority Critical patent/JP2008522399A/ja
Priority to EP05791381A priority patent/EP1815294A2/fr
Publication of WO2006056730A2 publication Critical patent/WO2006056730A2/fr
Publication of WO2006056730A3 publication Critical patent/WO2006056730A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Definitions

  • This invention relates to the protection of surfaces exposed to highly charged particles.
  • the invention finds particular use in the protection of multi-layer mirrors used in optical systems for reflecting extreme ultra violet (EUV) radiation, and in the protection of surfaces through which EUV radiation is transmitted into a photolithography chamber.
  • EUV extreme ultra violet
  • Photolithography is an important process step in semiconductor device fabrication.
  • a circuit design is transferred to a wafer through a pattern imaged on to a photoresist layer deposited on the wafer surface.
  • the wafer then undergoes various etch and deposition processes before a new design is transferred to the wafer surface. This cyclical process continues, building up the multiple layers of the semiconductor device.
  • EUV radiation for lithography creates many new difficulties, both for the optics in the lithography tool, and also in the apparatus for supplying EUV radiation to the tool.
  • EUV radiation has poor transmissibility through most gases at atmospheric pressures, and therefore much of the mechanical, electrical and optical equipment involved in the lithography process must be operated in a high- purity vacuum environment.
  • lens materials used for projection and focussing of radiation in DUV lithography such as calcium fluoride, are not suitable for transmission of EUV radiation, and it is usually necessary to use reflective optical devices (mirrors) in place of transmissive optical devices (lenses). These mirrors tend to be formed from alternate layers of molybdenum and silicon, each layer typically 5 to 10 nm thick, and generally terminate in a layer of silicon or a layer of ruthenium or other metallic species.
  • the source of EUV radiation is typically housed within a chamber located adjacent the lithography tool.
  • a spectral purity filter (SPF) is often used as a window through which EUV radiation is transmitted into the lithography tool.
  • SPF typically comprises a very thin foil, usually formed from zirconium, nickel or silicon.
  • the source of EUV radiation may be based on excitation of tin, lithium, or xenon.
  • a xenon plasma is generated, either by stimulating xenon by an electrostatic discharge or by intense laser illumination.
  • Electronic transitions of highly charged xenon species Xe +10 within the plasma to Xe +11 generate EUV radiation. Consequently, the source of EUV radiation also acts a source of highly charged particles. These particles can impact on the surfaces of multi-layer mirrors and the SPF located within the chamber, and cause atoms to be sputtered from those surfaces. This can reduce the reflectivity of the mirrors, and thus reduce the intensity of the EUV radiation transmitted to the lithography tool.
  • a method of protecting a surface from damage due to impact by charged particles comprising the steps, during the exposure of the surface to the charged particles, of supplying to the surface a source of carbon for forming a coating of carbonaceous deposits on the surface, and controlling at least one of the rate of deposition of deposits on the surface and the rate of impact of charged particles on the deposits to actively control the thickness of the coating.
  • the thickness of the coating can be actively controlled at or around a predetermined thickness which both prevents impact of the charged particles directly on to the surface and minimises the loss of reflectivity or transmissivity of the surface (due to the formation of the coating).
  • deliberately supplying a carbon source can overwhelm the effects of background carbon containing impurities inevitably present in the mirror environment.
  • An additional benefit of this approach is that it involves high rates of turnover of the carbonaceous species, thus maintaining the latter in a more reactive, easily removed chemical state. When this is not the case, aging of the carbonaceous deposits leads to its graphitisation, resulting in an optically deleterious and very stable surface coating that cannot be removed.
  • Controlling the partial pressure of the carbon source at the surface can provide one mechanism for controlling the deposition rate.
  • the partial pressure can be conveniently controlled by controlling the rate of supply of the carbon source to the surface.
  • a suitable sensor sensitive to the build-up of a thin film such as a quartz crystal oscillator or a surface acoustic wave device, a signal can be supplied to a mass flow controller for adjusting the rate at which the carbon source is supplied to the surface.
  • the impact rate may be controlled by controlling the rate of supply of charged particles to the coating.
  • some of the charged particles may be selectively neutralised, for example, by passing the charged particles through a gas curtain prior to impact with the deposits.
  • a fixed partial pressure of carbon source may be provided in combination with a variable pressure gas curtain to enable the thickness of the coating to be controlled.
  • the pressure of the gas curtain can be controlled in a similar manner to the partial pressure of the carbon source.
  • a buffer gas can be supplied to maintain a constant pressure in the vicinity of the surface. The maximum allowable total pressure of the mixture of buffer gas and carbon source depends on the absorption cross-section for EUV radiation of the gaseous species and will typically be less than 0.1 mbar.
  • the charged particles are preferably emitted from a source thereof located in a chamber housing the surface.
  • the source of charged particles is a plasma generated within the chamber for also emitting electromagnetic radiation, preferably EUV radiation, which promotes the deposition of carbonaceous deposits on the surface by stimulating the emission of secondary electrons from the surface which interact with the carbon source to form the carbonaceous deposits.
  • electromagnetic radiation preferably EUV radiation
  • a number of different materials may be used as the source of the plasma, for example, one of lithium, tin and xenon.
  • the surface may be a surface of a window for emitting EUV radiation from the chamber, typically a foil formed from zirconium, nickel or silicon, for example.
  • the surface may be a reflective surface, such as a surface of a multi ⁇ layer mirror.
  • the carbon source is preferably a source of organic molecules.
  • the choice of the carbon source is determined by a number of criteria, including the probability and rate of dissociative chemisorption on the surface, adequate cross-section for activation by secondary electrons, stability against polymerisation, and gas phase adsorption cross-section to EUV radiation. Examples include carbon monoxide, alkanes, alkynes, alkenes, aryl oxygenates, aromatics, nitrogen-containing species and halogen-containing species.
  • the present invention provides a method of protecting a surface located within a chamber within which extreme ultra violet (EUV) radiation and charged particles are generated, the method comprising the steps of supplying to the chamber a source of carbon for forming a coating of carbonaceous deposits on the surface in the presence of EUV radiation, impacting the coating with charged particles to remove deposits therefrom, and controlling at least one of the rate of deposition of deposits on the surface and the rate of impact of charged particles on the deposits to maintain the thickness of the coating at or around a predetermined value.
  • EUV extreme ultra violet
  • the present invention provides apparatus for protecting a surface from damage due to impact by charged particles, the apparatus comprising means for supplying to the surface a source of carbon for forming a coating of carbonaceous deposits on the surface during the exposure of the surface to the charged particles, and means for controlling at least one of the rate of deposition of deposits on the surface and the rate of impact of charged particles on the deposits to actively control the thickness of the coating.
  • the present invention provides apparatus for generating extreme ultra violet (EUV) radiation, the apparatus comprising a chamber having a window through which a EUV radiation is output from the chamber, a source of EUV radiation and charged particles located within the chamber, at least one reflective surface located within the chamber for focussing EUV radiation from the source towards the window, means for supplying to the chamber a source of carbon for forming a coating of carbonaceous deposits on said at least one reflective surface in the presence of EUV radiation, and means for controlling at least one of the rate of deposition of deposits on the surface and the rate of impact of charged particles on the deposits to maintain the thickness of the coating at or around a predetermined value.
  • EUV extreme ultra violet
  • the apparatus comprises a chamber 10 containing a source 12 of EUV radiation.
  • the source 12 may be a discharge plasma source or a laser-produced plasma source.
  • a discharge plasma source a discharge is created in a medium between two electrodes, and a plasma created from the discharge emits EUV radiation.
  • a laser-produced plasma source a target is converted to a plasma by an intense laser beam focused on the target.
  • a suitable medium for a discharge plasma source and for a target for a laser-produced plasma source is xenon, as xenon plasma radiates EUV radiation at a wavelength of 13.5 nm.
  • xenon plasma radiates EUV radiation at a wavelength of 13.5 nm.
  • other materials such as lithium and tin, may be used as the target material, and so the present invention is not limited to the particular material or mechanism used to generate EUV radiation.
  • EUV radiation, indicated at 14, generated in chamber 10 is supplied to another chamber 16 optically linked or connected to chamber 10 via, for example, one or more windows 18 formed in the walls of the chambers 10, 16.
  • the chamber 16 houses a lithography tool which projects a beam of EUV radiation beam on to a mask or reticle for the selective illumination of a photoresist on the surface of a substrate, such as a semiconductor wafer.
  • the chamber 10 houses a plurality of reflective surfaces provided by multi-layer mirrors (MLMs) 20.
  • the MLMs 20 comprise a plurality of layers, each layer comprising, from the bottom a first layer of molybdenum and a second layer of silicon.
  • a metallic layer typically formed from ruthenium, may be formed on the upper surface of each MLM 20 to improve the oxidation resistance of the MLMs 20 whilst transmitting substantially all of the EUV radiation incident thereon.
  • the window 18 is provided by a spectral purity filter (SPF) comprising a very thin foil, typically formed from zirconium, nickel or silicon, for transmitting EUV radiation into the chamber 16 whilst preventing contaminants from entering the lithography tool chamber 16 from the chamber 10.
  • SPPF spectral purity filter
  • a vacuum pumping system (not shown) is provided for generating a vacuum within the chambers 10, 16.
  • the pumping system may include, for each chamber, both a cryogenic vacuum pump and a transfer pump, such as a turbomolecular pump, backed by a roughing pump.
  • the source 12 of EUV radiation can also be a source of charged particles.
  • Xe +10 ions can be emitted from the source. These ions can impact on the surfaces of SPF 18 and MLMs 20 located within the chamber 10, and cause atoms to be sputtered from those surfaces. If sputtering is allowed to proceed, this can reduce the reflectivity of the MLMs 20, and thus reduce the intensity of the EUV radiationJxansmitted to the chamber 16, and can generate "holes" in the SPF 18, resulting in contamination of the chamber 16.
  • a layer of carbon on the surfaces of the SPF 18 and MLMs 20 clearly would normally be undesirable; the presence of a carbon coating on the surface of the SPF 18 would reduce its transmissivity, whilst a carbon coating of the surfaces of the MLMs 20 would reduce their reflectivity.
  • the formation of a carbon coating on the surfaces of these components of the apparatus can serve to protect the surfaces from sputtering due to the impact of these ions with the surfaces.
  • a carbon source for the controlled deposition of carbonaceous deposits on the surfaces of the SPF 18 and MLMs 20 under EUV radiation is introduced into the chamber 10 from a supply 22. Deliberately supplying a carbon source can overwhelm the effects of background carbon-containing impurities inevitably present in the chamber 10.
  • the carbon source is preferably selected from the group comprising carbon monoxide, alkynes, alkenes, aryl oxygenates, aromatics, nitrogen-containing species and halogen-containing species.
  • suitable oxygenates are alcohols, esters and ethers.
  • suitable nitrogen-containing compounds are amines, pyrrole and its derivatives, and pyridine and its derivatives.
  • suitable halogen-containing compounds are saturated aryl hydrides, unsaturated aryl hydrides, saturated alkyl hydrides, and unsaturated alkyl hydrides.
  • the carbon source is ethyne (C 2 H 2 ).
  • the coating thickness can be monitored using a sensor 24 sensitive to the build ⁇ up of a coating on one of its surfaces, such as a quartz crystal oscillator or a surface acoustic wave device, and strategically placed so as to have a similar exposure to the carbon source, EUV radiation and ions as the MLMs 20.
  • a sensor 24 sensitive to the build ⁇ up of a coating on one of its surfaces, such as a quartz crystal oscillator or a surface acoustic wave device, and strategically placed so as to have a similar exposure to the carbon source, EUV radiation and ions as the MLMs 20.
  • the sensor 24 outputs a signal indicative of the thickness of the coating formed thereon to a controller 26, which, in response to the received signal, outputs a control signal to a mass flow controller 28 for controlling the rate of supply of the carbon source from the supply 22 to the chamber 10 through inlet 30.
  • a controller 26 which, in response to the received signal, outputs a control signal to a mass flow controller 28 for controlling the rate of supply of the carbon source from the supply 22 to the chamber 10 through inlet 30.
  • the apparatus can be configured to control the rate at which the deposits are removed from these surfaces by the ions emitted from the source 12.
  • a gas can be introduced from a source thereof into the chamber 10 to form a gas curtain between the source 12 and the MLMs 20.
  • the gas supply 22 may be replaced by a source of gas for forming the gas curtain.
  • the rate of supply of the gas for forming the gas curtain may be controlled by mass flow controller 28 using signals output from the controller 26 in response to the thickness of the coating formed on sensor 24.
  • a separate source of gas for the gas curtain may be provided opposite or adjacent the supply 22 for supplying the gas into the chamber through a separate inlet, with the controller 26 supplying control signals to a separate mass flow controller to control the rate of supply of gas for forming the gas curtain.
  • EUV radiation is generated from a plasma, which emits both EUV radiation and electrically charged particles.
  • Organic molecules are supplied to the chamber, which interact with the EUV radiation to form a coating of carbonaceous deposits on the mirror surface.
  • the charged particles emitted from the plasma impact the deposits, causing the deposits to be sputtered from the mirror surface.
  • the thickness of the coating can be actively controlled both to prevent impact of the charged particles directly on to the mirror surface and to minimise the loss of reflectivity of the mirror surface due to the formation of the coating.
  • the method is also suitable for protecting the surface of a window used to transmit EUV radiation from the chamber.

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • X-Ray Techniques (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne une méthode pour protéger la surface d'un miroir situé dans un compartiment exposé à un rayonnement UV extrême (EUV). Ce rayonnement EUV est généré à partir d'un plasma qui émet à la fois un rayonnement EUV et des particules électriquement chargées. Des molécules organiques sont envoyées dans ce compartiment. Ces molécules organiques interagissent avec le rayonnement EUV pour former un revêtement de dépôts carbonés sur la surface du miroir. Les particules chargées émises à partir du plasma provoquent un choc sur les dépôts, ce qui provoque une érosion superficielle des dépôts situés sur la surface du miroir. En contrôlant au moins la vitesse de dépôt des dépôts sur la surface du miroir, et la vitesse de suppression des dépôts de la surface du miroir, l'épaisseur du revêtement peut être activement contrôlée à la fois pour empêcher les chocs directs des particules chargées sur la surface du miroir et pour minimiser la perte de réflectivité de la surface du miroir, en raison de la formation du revêtement. Cette méthode est également appropriée pour protéger la surface d'une fenêtre utilisée pour transmettre un rayonnement EUV à partir du compartiment.
PCT/GB2005/003918 2004-11-26 2005-10-11 Protection de surfaces exposees a des particules chargees Ceased WO2006056730A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007542076A JP2008522399A (ja) 2004-11-26 2005-10-11 荷電粒子に露出される表面の保護
EP05791381A EP1815294A2 (fr) 2004-11-26 2005-10-11 Protection de surfaces exposees a des particules chargees

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0426036.0 2004-11-26
GBGB0426036.0A GB0426036D0 (en) 2004-11-26 2004-11-26 Protection of surfaces exposed to charged particles

Publications (2)

Publication Number Publication Date
WO2006056730A2 true WO2006056730A2 (fr) 2006-06-01
WO2006056730A3 WO2006056730A3 (fr) 2007-03-22

Family

ID=33561420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2005/003918 Ceased WO2006056730A2 (fr) 2004-11-26 2005-10-11 Protection de surfaces exposees a des particules chargees

Country Status (7)

Country Link
EP (1) EP1815294A2 (fr)
JP (1) JP2008522399A (fr)
KR (1) KR20070084558A (fr)
CN (1) CN101061435A (fr)
GB (1) GB0426036D0 (fr)
TW (1) TW200632571A (fr)
WO (1) WO2006056730A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007107783A1 (fr) * 2006-03-23 2007-09-27 Edwards Limited Réparation d'un filtre spectral
WO2008007134A3 (fr) * 2006-07-14 2008-03-27 Edwards Ltd Procédé de contrôle de la contamination d'une surface
WO2008152454A1 (fr) * 2007-06-12 2008-12-18 Philips Intellectual Property & Standards Gmbh Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite
US8693090B2 (en) 2008-07-07 2014-04-08 Koninklijke Philips N.V. Extreme UV radiation reflecting element comprising a sputter-resistant material

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7671348B2 (en) * 2007-06-26 2010-03-02 Advanced Micro Devices, Inc. Hydrocarbon getter for lithographic exposure tools
US20220066071A1 (en) * 2020-08-27 2022-03-03 Kla Corporation Protection of optical materials of optical components from radiation degradation
CN114280893B (zh) * 2021-11-25 2023-08-01 中国科学院微电子研究所 光刻机的污染控制系统、方法和光刻机

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
TW548524B (en) * 2000-09-04 2003-08-21 Asm Lithography Bv Lithographic projection apparatus, device manufacturing method and device manufactured thereby

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007107783A1 (fr) * 2006-03-23 2007-09-27 Edwards Limited Réparation d'un filtre spectral
WO2008007134A3 (fr) * 2006-07-14 2008-03-27 Edwards Ltd Procédé de contrôle de la contamination d'une surface
WO2008152454A1 (fr) * 2007-06-12 2008-12-18 Philips Intellectual Property & Standards Gmbh Dispositif optique et procédé de traitement in situ d'un composant optique pour uv extrême afin d'améliorer une réflectivité réduite
KR101333032B1 (ko) * 2007-06-12 2013-11-26 코닌클리케 필립스 엔.브이. 감소된 반사율을 향상시키기 위하여 ｅｕｖ 광 컴포넌트를 인시추 처리하는 광학 장치 및 방법
US9110390B2 (en) 2007-06-12 2015-08-18 Koninklijke Philps N.V. Optical device and method of in situ treating an EUV optical component to enhance a reduced reflectivity
US9897724B2 (en) 2007-06-12 2018-02-20 Koninklijke Philips N.V. Optical device and method of in situ treating an EUV optical component to enhance a reduced reflectivity
US8693090B2 (en) 2008-07-07 2014-04-08 Koninklijke Philips N.V. Extreme UV radiation reflecting element comprising a sputter-resistant material

Also Published As

Publication number Publication date
TW200632571A (en) 2006-09-16
EP1815294A2 (fr) 2007-08-08
WO2006056730A3 (fr) 2007-03-22
JP2008522399A (ja) 2008-06-26
KR20070084558A (ko) 2007-08-24
CN101061435A (zh) 2007-10-24
GB0426036D0 (en) 2004-12-29

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