[go: up one dir, main page]

WO2003060979A3 - Organic compositions for low dielectric constant materials - Google Patents

Organic compositions for low dielectric constant materials Download PDF

Info

Publication number
WO2003060979A3
WO2003060979A3 PCT/US2003/000948 US0300948W WO03060979A3 WO 2003060979 A3 WO2003060979 A3 WO 2003060979A3 US 0300948 W US0300948 W US 0300948W WO 03060979 A3 WO03060979 A3 WO 03060979A3
Authority
WO
WIPO (PCT)
Prior art keywords
porogen
set forth
forth below
aromatic rings
polyacenaphthylene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/000948
Other languages
French (fr)
Other versions
WO2003060979A2 (en
Inventor
Chan-En Li
Ruslan Zherebin
Nassrin Sleiman
Amauel Gebrebrhan
Annath Naman
John G Sikonia
Kreisler Lau
Paul G Apen
Boris Korolev
Nancy Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/158,513 external-priority patent/US7141188B2/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to JP2003560974A priority Critical patent/JP2005516382A/en
Priority to EP03729654A priority patent/EP1466356A2/en
Priority to KR10-2004-7010994A priority patent/KR20040104454A/en
Priority to AU2003210504A priority patent/AU2003210504A1/en
Publication of WO2003060979A2 publication Critical patent/WO2003060979A2/en
Publication of WO2003060979A3 publication Critical patent/WO2003060979A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Insulating Materials (AREA)

Abstract

The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula 11 as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly (2-vinyl naphthalene), vinyl anthracene, 1s polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.
PCT/US2003/000948 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials Ceased WO2003060979A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003560974A JP2005516382A (en) 2002-01-15 2003-01-14 Organic composition
EP03729654A EP1466356A2 (en) 2002-01-15 2003-01-14 Organic compositions
KR10-2004-7010994A KR20040104454A (en) 2002-01-15 2003-01-14 Organic Compositions
AU2003210504A AU2003210504A1 (en) 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US35018702P 2002-01-15 2002-01-15
US60/350,187 2002-01-15
US35055702P 2002-01-22 2002-01-22
US60/350,557 2002-01-22
US35301102P 2002-01-30 2002-01-30
US60/353,011 2002-01-30
US37621902P 2002-04-29 2002-04-29
US60/376,219 2002-04-29
US37842402P 2002-05-07 2002-05-07
US60/378,424 2002-05-07
US10/158,513 2002-05-30
US10/158,513 US7141188B2 (en) 2001-05-30 2002-05-30 Organic compositions

Publications (2)

Publication Number Publication Date
WO2003060979A2 WO2003060979A2 (en) 2003-07-24
WO2003060979A3 true WO2003060979A3 (en) 2004-07-15

Family

ID=27558468

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/000948 Ceased WO2003060979A2 (en) 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials

Country Status (6)

Country Link
EP (1) EP1466356A2 (en)
JP (1) JP2005516382A (en)
KR (1) KR20040104454A (en)
CN (1) CN1643669A (en)
AU (1) AU2003210504A1 (en)
WO (1) WO2003060979A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878779B2 (en) * 2004-06-10 2012-02-15 富士フイルム株式会社 Film forming composition, insulating film and electronic device
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP4659486B2 (en) * 2005-03-01 2011-03-30 富士フイルム株式会社 Insulating film for electronic device, electronic device, and method for producing insulating film for electronic device
JP2006257212A (en) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd Film-forming composition, insulation film using it and electronic device
JP2007031663A (en) * 2005-07-29 2007-02-08 Fujifilm Corp Film forming composition, insulating film formed using the same, and electronic device
JP2007314778A (en) * 2006-04-26 2007-12-06 Fujifilm Corp Film forming composition, insulating film formed using the composition, and electronic device
WO2007143028A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Low dielectric constant materials prepared from soluble fullerene clusters
WO2007143025A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
WO2007143029A1 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Porous materials derived from polymer composites
WO2007143026A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
EP2094738B1 (en) * 2006-11-17 2013-02-27 University Of Massachusetts Lowell Research Foundation Functional hydrocarbon polymers and process for producing same
JP2008231259A (en) * 2007-03-20 2008-10-02 Sumitomo Bakelite Co Ltd Organic insulating material
JP2009013116A (en) 2007-07-05 2009-01-22 Daicel Chem Ind Ltd Ethynylphenylbiadamantane derivative
GB2451865A (en) 2007-08-15 2009-02-18 Univ Liverpool Microporous polymers from alkynyl monomers
JP2023542688A (en) * 2020-09-21 2023-10-11 スリーエム イノベイティブ プロパティズ カンパニー Hyperbranched polymer, method for producing the same, and curable composition containing the same
US20240087880A1 (en) * 2022-08-26 2024-03-14 Applied Materials, Inc. Systems and methods for depositing low-k dielectric films
CN119110829A (en) * 2023-04-10 2024-12-10 株式会社力森诺科 Resin composition, prepreg, resin film, metal-clad laminate, printed wiring board, semiconductor package, and acenaphthene homopolymer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0869516A1 (en) * 1997-03-31 1998-10-07 Dow Corning Toray Silicone Company, Limited Composition and process for forming electrically insulating thin films
WO2000031183A1 (en) * 1998-11-24 2000-06-02 The Dow Chemical Company A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
JP2001192539A (en) * 2000-01-13 2001-07-17 Jsr Corp Thermosetting resin composition, cured product thereof, and circuit board including the cured product
WO2001078110A2 (en) * 2000-04-07 2001-10-18 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
JP2002003683A (en) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd Resin composition low in both hygroscopic property and birefringence and forming material, sheet of film and optical parts obtained from the resin composition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3483500B2 (en) * 1999-05-28 2004-01-06 富士通株式会社 Insulating film forming material, insulating film forming method, and semiconductor device
JP4651774B2 (en) * 2000-04-11 2011-03-16 新日鐵化学株式会社 Aromatic oligomer, phenol resin composition containing the same, epoxy resin composition and cured product thereof
EP1197998A3 (en) * 2000-10-10 2005-12-21 Shipley Company LLC Antireflective porogens
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP2003131001A (en) * 2001-05-25 2003-05-08 Shipley Co Llc Porous optical material
US7049005B2 (en) * 2001-05-30 2006-05-23 Honeywell International Inc. Organic compositions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0869516A1 (en) * 1997-03-31 1998-10-07 Dow Corning Toray Silicone Company, Limited Composition and process for forming electrically insulating thin films
WO2000031183A1 (en) * 1998-11-24 2000-06-02 The Dow Chemical Company A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
JP2001192539A (en) * 2000-01-13 2001-07-17 Jsr Corp Thermosetting resin composition, cured product thereof, and circuit board including the cured product
WO2001078110A2 (en) * 2000-04-07 2001-10-18 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
JP2002003683A (en) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd Resin composition low in both hygroscopic property and birefringence and forming material, sheet of film and optical parts obtained from the resin composition

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 200230, Derwent World Patents Index; Class A13, AN 2002-245992, XP002263344 *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 05 3 May 2002 (2002-05-03) *

Also Published As

Publication number Publication date
JP2005516382A (en) 2005-06-02
AU2003210504A1 (en) 2003-07-30
EP1466356A2 (en) 2004-10-13
CN1643669A (en) 2005-07-20
AU2003210504A8 (en) 2003-07-30
WO2003060979A2 (en) 2003-07-24
KR20040104454A (en) 2004-12-10

Similar Documents

Publication Publication Date Title
WO2003060979A3 (en) Organic compositions for low dielectric constant materials
WO2003061029A3 (en) Organic compositions
Zhang et al. An elastic autonomous self‐healing capacitive sensor based on a dynamic dual crosslinked chemical system
EP1448669B1 (en) Adhesive composition comprising a polyimide copolymer and method for preparing the same
WO2008126411A1 (en) Epoxy resin composition, prepreg, laminate, multilayer printed wiring board, semiconductor device, insulating resin sheet, and method for manufacturing multilayer printed wiring board
WO2005080525A3 (en) Aromatic amine compositions and electronic devices made with such compositions
PL1641862T3 (en) Silyl ester copolymer compositions
SG190423A1 (en) Adhesive composition, adhesive sheet, and semiconductor device using the adhesive composition or the adhesive sheet
CN101687983A (en) Aromatic liquid-crystalline polyester amide copolymer, prepreg including the same, prepreg laminate including the prepreg, metal film laminate including the prepreg, and printed wiring board including
EP1858996A4 (en) COATING COMPOSITION FOR INSULATING DIELECTRIC FILM, INSULATING DIELECTRIC FILM PREPARED THEREFROM, AND ELECTRIC OR ELECTRONIC COMPONENT COMPRISING THE SAME
CN104908389B (en) Prepreg, metal-clad laminate and printed wiring board
Li et al. Polyamide 11/poly (vinylidene fluoride) blends as novel flexible materials for capacitors
CN104662097A (en) Resin composition, cured film, laminated film, and method for manufacturing semiconductor device
WO2005044899A8 (en) Prepolymer, prepolymer composition, high molecular weight polymer having structure containing hole and electrically insulating film
JP6911806B2 (en) Resin composition, sheet-like laminated material, printed wiring board and semiconductor device
WO2000031163A3 (en) Poly(arylene ether) homopolymer compositions and methods of manufacture thereof
CA2733682C (en) Polymeric compositions comprising per(phenylethynyl) arene derivatives
KR20220035927A (en) A thermosetting resin composition, a thermosetting resin film, a thermosetting film, a laminated body, and a printed wiring board, and its manufacturing method
US7329559B2 (en) Use of conductive carbon black/graphite mixtures for the production of low-cost electronics
JPS56141349A (en) Curable polyphenylene ether type resin composition
EP1219657A4 (en) Polyarylene and method for production thereof
WO2005105894A3 (en) SILOXANE EPOXY POLYMERS FOR LOW-κ DIELECTRIC APPLICATIONS
EP1702958A4 (en) Hardening resin composition
ES8203934A1 (en) Compositions comprising viscoelastic liquid compounds.
GB0229659D0 (en) Electronic devices

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003729654

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2003560974

Country of ref document: JP

Ref document number: 1020047010994

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2003805938X

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2003729654

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2003729654

Country of ref document: EP