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CN1643669A - Organic compositions for low dielectric constant material - Google Patents

Organic compositions for low dielectric constant material Download PDF

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CN1643669A
CN1643669A CNA03805938XA CN03805938A CN1643669A CN 1643669 A CN1643669 A CN 1643669A CN A03805938X A CNA03805938X A CN A03805938XA CN 03805938 A CN03805938 A CN 03805938A CN 1643669 A CN1643669 A CN 1643669A
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adamantane
aryl
porogen
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C·-E·李
R·泽雷宾
N·斯雷曼
A·格雷汉
A·纳曼
J·G·斯科尼亚
K·劳
P·G·阿彭
B·科罗勒夫
N·伊瓦莫托
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Honeywell International Inc
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    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

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Abstract

The present invention provides a composition comprising: a dielectric material and b porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising a thermosetting component comprising 1 optionally monomer of Formula I as set forth below and 2 at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and b porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly 2-vinyl naphthalene, vinyl anthracene, 1s polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.

Description

用于低介电常数材料的有机组合物Organic composition for low dielectric constant material

待审批的申请的权益Benefits of Pending Applications

本申请是于2002年5月30日提交的待审批的10/158513的部分连续申请,该申请要求以下待审批的共同转让的临时专利申请的权益:2002年4月29日提交的60/376219及2002年5月7日提交的60/378424。这些申请的内容通过引用其整体而结合到本文中。This application is a Continuation-in-Part of pending 10/158513, filed May 30, 2002, which claims the benefit of the following pending commonly assigned provisional patent application: 60/376219, filed April 29, 2002 and 60/378424, filed May 7, 2002. The contents of these applications are hereby incorporated by reference in their entirety.

发明领域field of invention

本发明涉及半导体装置,具体地讲,本发明涉及具有低介电常数的有机材料的半导体装置及其制备方法。The present invention relates to a semiconductor device, and in particular, the present invention relates to a semiconductor device having an organic material with a low dielectric constant and a manufacturing method thereof.

发明背景Background of the invention

为努力提高半导体装置的性能和速度,半导体装置生产商一直寻求减小互连的线宽和间距,同时使传输损失最小化并降低互连的电容耦合。降低能耗和电容的一种方法是通过降低间隔互连的绝缘材料或电介质的介电常数(也称为“k”)。特别需要介电常数低的绝缘材料,因为它们通常能使信号传播更快,降低电容和减少导线间的串音,并降低集成电路工作所需电压。In an effort to increase the performance and speed of semiconductor devices, semiconductor device manufacturers have been seeking to reduce the line width and spacing of interconnects while minimizing transmission losses and reducing capacitive coupling of the interconnects. One way to reduce power dissipation and capacitance is by lowering the dielectric constant (also known as "k") of the insulating material or dielectric that separates the interconnects. Insulating materials with low dielectric constants are particularly desirable because they generally enable faster signal propagation, lower capacitance and crosstalk between wires, and lower voltages required for integrated circuits to operate.

由于空气的介电常数是1.0,所以主要目标就是将绝缘材料的介电常数降低到理论极限值1.0。现有技术中有几种降低绝缘材料的介电常数的方法。这些技术包括将元素如氟加入到组合物中以降低整块材料的介电常数。降低k的其它方法包括使用替代介电材料基体。另一种方法是在基体中引入孔。Since the dielectric constant of air is 1.0, the main goal is to reduce the dielectric constant of insulating materials to the theoretical limit of 1.0. There are several methods in the prior art to reduce the dielectric constant of insulating materials. These techniques include adding elements such as fluorine to the composition to lower the dielectric constant of the bulk material. Other methods of lowering k include the use of alternative dielectric material substrates. Another approach is to introduce pores in the matrix.

因此,随着互连线宽下降,要求绝缘材料的介电常数也同时下降,以获得将来半导体装置需要的改善的性能和速度。例如,互连线宽为0.13或0.10微米及以下的装置需要介电常数(k)<3的绝缘材料。Therefore, as the interconnect line width decreases, the dielectric constant of the insulating material is required to decrease at the same time to obtain the improved performance and speed demanded by future semiconductor devices. For example, devices with interconnect line widths of 0.13 or 0.10 microns and below require insulating materials with a dielectric constant (k)<3.

目前使用二氧化硅(SiO2)和改性的二氧化硅如氟代二氧化硅或氟代硅玻璃(下文称FSG)。这些介电常数范围约为3.5-4.0的氧化物常用作半导体装置的电介质。虽然SiO2和FSG具有半导体装置生产时的热循环和加工步骤所必须的机械和热稳定性,但是半导体工业非常需要具有低介电常数的材料。Silicon dioxide (SiO 2 ) and modified silicon dioxide such as fluorosilica or fluorosilica glass (hereinafter FSG) are currently used. These oxides, which have a dielectric constant in the range of about 3.5-4.0, are commonly used as dielectrics in semiconductor devices. While SiO2 and FSG have the mechanical and thermal stability necessary for thermal cycling and processing steps in semiconductor device production, materials with low dielectric constants are highly desired by the semiconductor industry.

用于沉积介电材料的方法可分为两类:自旋沉积(下文称SOD)和化学蒸汽沉积(下文称CVD)。一些开发低介电常数的材料的方法包括改变化学组成(有机、无机、有机/无机共混物)或改变介电基体(多孔、无孔)。表1汇总了介电常数范围为2.0-3.5的几种材料的研究情况(PE=增强的等离子体;HDP=高密度等离子体)。然而表1中公布的介电材料和基体未能表现出有效介电材料期望、甚至是必需的许多物理化学综合特性,例如较高的机械稳定性、高热稳定性、高玻璃化转变温度、高模量或硬度,同时依然能够形成溶剂化物,自旋沉积或沉积在基体、晶片或其他表面上。因此,研究其它可用作绝缘材料和绝缘层的化合物和材料将是有益的,即便目前这些化合物或材料以现在的状态还不能考虑用作介电材料。Methods for depositing dielectric materials can be classified into two categories: spin-on deposition (hereinafter referred to as SOD) and chemical vapor deposition (hereinafter referred to as CVD). Some approaches to develop low dielectric constant materials include changing the chemical composition (organic, inorganic, organic/inorganic blends) or changing the dielectric matrix (porous, non-porous). Table 1 summarizes the research status of several materials with a dielectric constant ranging from 2.0 to 3.5 (PE=enhanced plasma; HDP=high density plasma). However, the dielectric materials and substrates published in Table 1 fail to exhibit many comprehensive physical and chemical properties that are expected and even necessary for effective dielectric materials, such as high mechanical stability, high thermal stability, high glass transition temperature, high modulus or hardness while still being able to form solvates, spin-deposited or deposited on substrates, wafers or other surfaces. Therefore, it would be beneficial to study other compounds and materials that can be used as insulating materials and insulating layers, even if these compounds or materials cannot be considered as dielectric materials in their current state.

                                      表1 材料   沉积方法   介电常数(k) 参考文献 氟代氧化硅(SiOF)   PE-CVD;HDP-CVD   3.3-3.5 美国专利6,278,174 倍半氢硅氧烷(HSQ)   SOD   2.0-2.5 美国专利4,756,977;5,370,903和5,486,564;国际专利公布WO 00/40637;E,S.Moyer等.“Ultra Low k SilsesquioxaneBased Resins”,Concepts and Needsfor Low Dielectric Constant<0.15μm Interconnect Materials:Nowand the Next Millennium,由the American Chemical Society资助,128-146页(1999年,11月14-17日) 倍半甲基硅氧烷(MSQ)   SOD   2.4-2.7 美国专利6,143,855 聚有机硅   SOD   2.5-2.6 美国专利6,225,238 氟无定形碳(a-C:F)   HDP-CVD   2.3 美国专利5,900,290 苯并环丁烯(BCB)   SOD   2.4-2.7 美国专利5,225,586 聚芳撑醚(PAE)   SOD   2.4 美国专利5,986,045;5,874,516;和5,658,994 聚对亚苯基二甲基(N和F)   CVD   2.4 美国专利5,268,202 聚亚苯基   SOD   2.6 美国专利5,965,679和6,288,188B1;和waeterloos等,“Integration Feasibility of PorousSiL K Semiconductor Dielectric”, Table 1 Material deposition method Dielectric constant (k) references Fluorinated silicon oxide (SiOF) PE-CVD; HDP-CVD 3.3-3.5 US Patent 6,278,174 Silsesquihydrosiloxane (HSQ) SOD 2.0-2.5 U.S. Patents 4,756,977; 5,370,903 and 5,486,564; International Patent Publication WO 00/40637; E, S. Moyer et al. "Ultra Low k Silsesquioxane Based Resins", Concepts and Needs for Low Dielectric Constant<0.15μm Funded by the American Chemical Society, pp. 128-146 (November 14-17, 1999) Sesquimethylsiloxane (MSQ) SOD 2.4-2.7 US Patent 6,143,855 polysilicone SOD 2.5-2.6 US Patent 6,225,238 Fluorine Amorphous Carbon (aC:F) HDP-CVD 2.3 US Patent 5,900,290 Benzocyclobutene (BCB) SOD 2.4-2.7 US Patent 5,225,586 Polyarylene Ether (PAE) SOD 2.4 US Patents 5,986,045; 5,874,516; and 5,658,994 Parylene (N and F) CVD 2.4 US Patent 5,268,202 Polyphenylene SOD 2.6 US Patents 5,965,679 and 6,288,188 B1; and Waeterloos et al., "Integration Feasibility of PorousSiL K Semiconductor Dielectric",

2001年国际互连技术会议会刊,253-254页(2001) Proceedings of the 2001 International Conference on Interconnection Technology, pp. 253-254 (2001) 热固性苯并环丁烯,聚亚芳基,热固性全氟乙烯单体 Thermosetting benzocyclobutene, polyarylene, thermosetting perfluoroethylene monomer     SOD SOD   2.3 2.3 国际专利公开WO 00/31183 International Patent Publication WO 00/31183 聚(苯基喹喔啉),有机聚硅氧烷 Poly(phenylquinoxaline), organopolysiloxane     SOD SOD   2.3-3.0 2.3-3.0 美国专利5,776,990;5,895,263;6,107,357和6,342,454和美国专利公开2001/0040294 US Patents 5,776,990; 5,895,263; 6,107,357 and 6,342,454 and US Patent Publication 2001/0040294 有机聚硅氧烷 organopolysiloxane     SOD SOD   没有报导 No report 美国专利6,271,273 US Patent 6,271,273 有机和无机材料 organic and inorganic materials     SOD SOD   2.0-2.5 2.0-2.5 美国专利6,156,812 US Patent 6,156,812 有机和无机材料 organic and inorganic materials     SOD SOD   2.0-2.3 2.0-2.3 美国专利6,171,687 US Patent 6,171,687 有机材料 organic material     SOD SOD   没有报导 No report 美国专利6,172,128 US Patent 6,172,128 有机物 organic matter     SOD SOD   2.12 2.12 美国专利6,214,746 US Patent 6,214,746 有机倍半硅氧烷 organosilsesquioxane     CVD,SOD CVD, SOD   <3.9 <3.9 WO 01/29052 WO 01/29052 氟代倍半硅氧烷 Fluorosilsesquioxane     CVD,SOD CVD, SOD   <3.9 <3.9 WO 01/29141 WO 01/29141

令人遗憾的是,正研发中的介电常数范围为2.0-3.5的许多有机SOD系统存在如上所述的机械和热特性方面的某些缺陷,因此半导体工业需要研发出具有该范围介电常数的介电膜的改进的工艺和性能。另外,工业上需要具有所述的低介电常数可扩充性的材料,即是能够降低至更低介电常数(如2.7-2.5至2.2-2.0和以下)的材料。Unfortunately, many organic SOD systems under development with a dielectric constant in the range of 2.0-3.5 have some deficiencies in mechanical and thermal properties as described above, so the semiconductor industry needs to develop Improved process and performance of dielectric films. In addition, there is a need in the industry for materials with low dielectric constant scalability, ie, materials that can be lowered to lower dielectric constants (eg, 2.7-2.5 to 2.2-2.0 and below).

Reichert和Mathias描述了包含金刚烷(adamantane,下文中简称为C10金刚烷)分子的化合物和单体,它们是一类笼形的分子,可用做金刚石替代物。(Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1993年,34(1)卷,495-6页;Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1992年,33(2)卷,144-5页;Chem.Mater.,1993年,5(1)卷,4-5页;Reichert and Mathias describe compounds and monomers comprising adamantane (hereinafter abbreviated as C 10 adamantane) molecules, a class of cage-like molecules that can be used as diamond substitutes. (Polym, Prepr. (Am.Chem.Soc., Div.Polym.Chem.), 1993, Vol. 34(1), pp. 495-6; Polym, Prepr. (Am.Chem.Soc., Div.Polym .Chem.), 1992, Vol. 33(2), pp. 144-5; Chem.Mater., 1993, Vol. 5(1), pp. 4-5;

Macromolecules,1994年,27(24)卷,7030-7034页;Macromolecules,1994年,27(24)卷,7015-7023页;Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1995年,36(1)卷,741-742页;205th ACS NationalMeeting,Conference Program,1993年,312页;Macromolecules,1994年,27(24)卷,7024-9页;Macromolecules,1992年,25(9)卷,2294-306页;Macromolecules,1991年,24(18)卷,5232-3页;Veronica R.Reichert,PhD Dissertation,1994年,55-06B卷;ACS Symp.Ser.:Step-GrowthPolymers for High-Performance Materials,1996年,624卷,197-207页;Macromolecules,2000年,33(10)卷,3855-3859页;Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1999年,40(2)卷,620-621页;Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1999年,40(2)卷,577-78页;Macromolecules,1997年,30(19)卷,5970-5975页;J.Polym.Sci,PartA:Polymer Chemistry,1997年,35(9)卷,1743-1751页;Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1996年,37(2)卷,243-244页;Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1996年,37(1)卷,551-552页;J.Polym.Sci.,Part A:Polymer Chemistry,1996年,34(3)卷,397-402页;Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1995年,36(2)卷,140-141页;Polym,Prepr.(Am.Chem.Soc.,Div.Polym.Chem.),1992年,33(2)卷,146-147页;J.Appl.Polym.Sci.,1998年,68(3)卷,475-482页)。Reichert和Mathias描述的C10金刚烷基化合物和单体优选用于形成聚合物,其中C10金刚烷分子作为热固性核。但是,Reichert和Mathias所公开的化合物只包括通过设计选择的C10金刚烷基化合物的一种异构体。结构A显示了该对称的对位异构体-1,3,5,7-四[4′-(苯乙炔基)苯基]C10金刚烷:Macromolecules, 1994, Volume 27(24), Pages 7030-7034; Macromolecules, 1994, Volume 27(24), Pages 7015-7023; Polym, Prepr. (Am.Chem.Soc., Div.Polym.Chem. ), 1995, Vol. 36(1), pp. 741-742; 205th ACS National Meeting, Conference Program, 1993, pp. 312; Macromolecules, 1994, Vol. 27(24), pp. 7024-9; Macromolecules, 1992 , Vol. 25(9), pp. 2294-306; Macromolecules, 1991, Vol. 24(18), pp. 5232-3; Veronica R. Reichert, PhD Dissertation, 1994, Vol. 55-06B; ACS Symp. Ser.: Step-Growth Polymers for High-Performance Materials, 1996, volume 624, pages 197-207; Macromolecules, 2000, volume 33(10), pages 3855-3859; Polym, Prepr. (Am.Chem.Soc., Div. Polym.Chem.), 1999, Vol. 40(2), pp. 620-621; Polym, Prepr. (Am.Chem.Soc., Div.Polym.Chem.), 1999, Vol. 40(2), 577 -78 pages; Macromolecules, 1997, volume 30(19), pages 5970-5975; J.Polym.Sci, PartA: Polymer Chemistry, 1997, volume 35(9), pages 1743-1751; Polym, Prepr.( Am.Chem.Soc., Div.Polym.Chem.), 1996, Vol. 37(2), pp. 243-244; Polym, Prepr. (Am.Chem.Soc., Div.Polym.Chem.), 1996 Year, Volume 37(1), Pages 551-552; J.Polym.Sci., Part A: Polymer Chemistry, 1996, Volume 34(3), Pages 397-402; Polym, Prepr.(Am.Chem.Soc ., Div.Polym.Chem.), 1995, Vol. 36(2), pp. 140-141; Polym, Prepr. (Am.Chem.Soc., Div.Polym.Chem.), 1992, 33(2 ), pp. 146-147; J.Appl.Polym.Sci., 1998, vol. 68(3), pp. 475-482). The C10 adamantane compounds and monomers described by Reichert and Mathias are preferably used to form polymers in which the C10 adamantane molecule serves as the thermosetting core. However, the compounds disclosed by Reichert and Mathias include only one isomer of the C10 adamantyl compound selected by design. Structure A shows the symmetrical para-isomer-1,3,5,7-tetrakis[4'-(phenylethynyl)phenyl] C10 adamantane:

结构AStructure A

换句话说,Reichert和Mathias在他们各自和共同的工作中涉及一种有用的只包含目标C10金刚烷基单体的一种异构体形式的聚合物。但是,当通过C10金刚烷基单体的单一异构体形式1,3,5,7-四[4′-(苯乙炔基)苯基]C10金刚烷(对称的“全对位”异构体)形成聚合物并进行加工时,存在一个严重问题。根据Reichert的论文(出处同前)和Macromolecules 27卷,7015-7034页(出处同前),发现对称的全对位异构体1,3,5,7-四[4′-(苯乙炔基)苯基]C10金刚烷“可充分溶于氯仿中,由此可得到1H NMR波谱。但是,从采集时间来看无法得到溶液13CNMR波谱”。这表明所有的对位异构体溶解性较小。这样,Reichert的对称的全对位异构体1,3,5,7-四[4′-(苯乙炔基)苯基]C10金刚烷不能溶解于标准的有机溶剂中,因此,将不能用于任何需要溶解性或基于溶剂的加工应用,如流涂、旋涂、浸涂中。In other words, Reichert and Mathias, in their respective and joint work, refer to a useful polymer comprising only one isomeric form of the targeted C10 adamantyl monomer. However, when 1,3,5,7 - tetrakis[4′-(phenylethynyl)phenyl]C 10 adamantane (symmetrical “all-para” isomers) to form polymers and process them, there is a serious problem. According to Reichert's paper (supra) and Macromolecules volume 27, pages 7015-7034 (supra), the symmetrical all-para isomer 1,3,5,7-tetra[4'-(phenylethynyl ) phenyl]C 10 adamantane "is sufficiently soluble in chloroform that a 1 H NMR spectrum can be obtained. However, a solution 13 CNMR spectrum cannot be obtained from the acquisition time". This indicates that all para isomers are less soluble. Thus, Reichert's symmetrical all-para isomer 1,3,5,7-tetrakis[4'-(phenylethynyl)phenyl] C10 adamantane is insoluble in standard organic solvents and, therefore, will not For use in any solvent-based or solvent-based processing application such as flow coating, spin coating, dip coating.

在我们的共同转让的、于2001年10月17日提交的待审批的专利申请PCT/US01/22204(要求我们共同转让的以下待审批的专利申请的权益:于2000年4月7日提交的美国专利系列号09/545058、于2000年7月19日提交的美国专利系列号09/618945、于2001年7月5日提交的美国专利系列号09/897936、于2001年7月10日提交的美国专利系列号09/902924;以及于2001年10月18日公布的国际公布WO 01/78110的权益)中,我们发现一种包括异构的热固性单体或二聚体混合物的组合物,其中所述混合物包括具有以下相应结构的至少一种单体或二聚体,In our commonly assigned pending patent application PCT/US01/22204, filed October 17, 2001 (claiming interest in our commonly assigned pending patent application: filed April 7, 2000 U.S. Patent Serial No. 09/545058, filed July 19, 2000, U.S. Patent Serial No. 09/618945, filed July 5, 2001, U.S. Patent Serial No. 09/897936, filed July 10, 2001 09/902924; and the benefit of International Publication WO 01/78110, published October 18, 2001), we discovered a composition comprising a mixture of isomeric thermosetting monomers or dimers, Wherein said mixture comprises at least one monomer or dimer having the following corresponding structures,

其中Z选自笼形化合物和硅原子;R′1、R′2、R′3、R′4、R′5和R′6独立选自芳基、支化芳基和亚芳基醚;所述芳基、支化芳基和亚芳基醚至少之一带乙炔基;R′7是芳基或取代芳基。我们也公开制备这些热固性混合物的方法。该新的异构的热固性单体或二聚体混合物在微电子学领域中可用作介电材料并溶于许多溶剂如环己酮中。这些所需的特性使该异构的热固性单体或二聚体混合物非常理想地用于形成厚度约为0.1微米至1.0微米的薄膜。Wherein Z is selected from a clathrate compound and a silicon atom; R' 1 , R' 2 , R' 3 , R' 4 , R' 5 and R' 6 are independently selected from aryl, branched aryl and arylene ether; At least one of the aryl group, branched aryl group and arylene ether has an ethynyl group; R'7 is an aryl group or a substituted aryl group. We also disclose methods of making these thermosetting mixtures. This new isomeric thermosetting monomer or dimer mixture is useful as a dielectric material in the field of microelectronics and is soluble in many solvents such as cyclohexanone. These desirable properties make the isomeric thermosetting monomer or dimer mixture highly desirable for forming films having a thickness of about 0.1 micron to 1.0 micron.

在我们的与本发明申请同时提交的专利申请60/384304中要求保护多孔形式的前述异构体混合物。A mixture of the aforementioned isomers in porous form is claimed in our patent application 60/384304 filed concurrently with the present application.

我们公开于2001年10月18日的国际专利公布WO 01/78110的背景技术部分中提及一种引入纳米尺寸空穴的方法,所述方法包括物理共混或化学接枝热稳定或不耐热的部分。该公开的发明指出可使用笼形结构(如C10金刚烷或C14金刚烷)来将纳米空穴引入介电材料中,以获得低介电常数材料,并定义低介电常数材料的介电常数低于3.0。但是,该公开没有报导其任何实施例的介电常数。In the Background Art section of our International Patent Publication WO 01/78110 published on October 18, 2001, we mentioned a method for introducing nano-sized cavities, which includes physical blending or chemical grafting of thermally stable or intolerant hot part. The disclosed invention points out that a cage structure (such as C 10 adamantane or C 14 adamantane) can be used to introduce nano-holes into dielectric materials to obtain low-k materials and define the dielectric properties of low-k materials. The electrical constant is lower than 3.0. However, this publication does not report the dielectric constant of any of its examples.

国际专利公开WO 00/31183在其背景技术部分中指出虽然已知的多孔热塑性材料具有可接受的介电常数,但是在随后的高温加工过程中,这些孔容易坍塌。因此,该专利指出不要往已引入纳米空穴的笼形结构(2001年10月18日公开的国际专利公布WO 01/78110)增加多孔性。另外,美国专利5,776,990、5,895,263、6,107,357和6,342,454,以及美国专利公开2001/0040294指出虽然到多孔性水平低于约20%可得到2.3-2.4的介电常数,但是在没有包括小区域尺寸和/或非互连性的孔结构的情况下,孔的含量无法得到进一步的提高。同样,美国专利6,271,273、6,156,812、6,171,687和6,172,128指出将不耐热的单体单元的量限制在少于约30%体积,因为当使用多于约30%体积的不耐热单体时,所得的介电材料将具有柱状或层状区域,而非孔或空穴结构。由此,在除去,即加热降解不耐热单体单元时,将形成互连或坍塌的结构。International Patent Publication WO 00/31183 states in its background section that although known porous thermoplastic materials have acceptable dielectric constants, the pores tend to collapse during subsequent high temperature processing. Therefore, the patent teaches not to add porosity to a cage structure into which nanocavities have been introduced (International Patent Publication WO 01/78110 published on October 18, 2001). Additionally, U.S. Patents 5,776,990, 5,895,263, 6,107,357, and 6,342,454, and U.S. Patent Publication 2001/0040294 indicate that while dielectric constants of 2.3-2.4 are achievable to porosity levels below about 20%, they do not include small domain sizes and/or In the case of non-interconnected pore structures, the pore content cannot be further increased. Likewise, U.S. Patents 6,271,273, 6,156,812, 6,171,687, and 6,172,128 teach limiting the amount of thermolabile monomer units to less than about 30% by volume, because when more than about 30% by volume of thermolabile monomer is used, the resulting The dielectric material will have columnar or layered regions rather than hole or cavity structures. Thus, upon removal, ie, thermally degraded, heat-labile monomer units, interconnected or collapsed structures will form.

虽然现有技术有各种降低材料的介电常数的方法,但这些方法均存在不足之处。因此,半导体工业依然需要:a)提供改进的组合物和降低介电层的介电常数的方法;b)提供具有改进的性能如热稳定性、玻璃化温度(Tg)、模量和硬度的介电材料;c)制备能够溶剂化并旋涂在晶片或层压材料上的热固性化合物和介电材料;以及d)提供具有所述可扩充性的材料。Although there are various methods for reducing the dielectric constant of materials in the prior art, these methods all have disadvantages. Accordingly, there remains a need in the semiconductor industry to: a) provide improved compositions and methods for reducing the dielectric constant of dielectric layers; b) provide improved properties such as thermal stability, glass transition temperature (Tg), modulus and hardness. Dielectric materials; c) making thermoset compounds and dielectric materials that can be solvated and spin-coated on wafers or laminates; and d) providing materials with said scalability.

本发明有利地提供了所述可扩充性,这样半导体生产商可将本发明组合物用于多种微型芯片的制备。The present invention advantageously provides such scalability so that semiconductor manufacturers can use the compositions of the present invention for the fabrication of a variety of microchips.

发明概述Summary of the invention

针对现有技术的需要并从有别于已有技术的角度出发,我们研发了一种组合物,所述组合物包括:In response to the needs of the prior art and from a perspective different from the prior art, we have developed a composition comprising:

(a)介电材料;和(a) dielectric material; and

(b)成孔剂,所述成孔剂包括至少两个稠合芳环,其中所述稠合芳环上各自具有至少一个烷基取代基且在相邻芳环上的至少两个烷基取代基间存在键。(b) a porogen comprising at least two fused aromatic rings, wherein each of the fused aromatic rings has at least one alkyl substituent and at least two alkyl substituents on adjacent aromatic rings Bonds exist between substituents.

我们还发现了一种介电常数小于2.7的包含笼形结构的组合物。We have also found a composition comprising a cage structure with a dielectric constant of less than 2.7.

我们还发现了一种组合物,所述组合物包括:We have also discovered a composition comprising:

(a)热固性组分,所述组分包括:(a) a thermosetting component comprising:

(1)任选的至少一种式I的单体:(1) Optional at least one monomer of formula I:

and

(2)式II的至少一种低聚物或聚合物,(2) at least one oligomer or polymer of formula II,

其中E是笼形化合物;每个Q相同或不同并选自氢、芳基、支化芳基和取代芳基,其中取代基包括氢、卤素、烷基、芳基、取代芳基、杂芳基、芳醚、链烯基、炔基、烷氧基、羟烷基,羟芳基,羟链烯基、羟炔基、羟基或羧基;Gw是芳基或取代芳基,其中取代基包括卤素和烷基;h为0-10;i为0-10;j为0-10;w为0或1;和wherein E is a clathrate; each Q is the same or different and is selected from hydrogen, aryl, branched aryl, and substituted aryl, wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl group, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl or carboxyl; Gw is aryl or substituted aryl, wherein the substituent includes halogen and alkyl; h is 0-10; i is 0-10; j is 0-10; w is 0 or 1; and

(b)成孔剂。(b) Porogens.

可以理解,当上式II或下式IV、VI、VII、VIII或IX中w为0时,两个笼形化合物直接键合。对于每个至少与一个Q连接的E而言,优选E连接的Q不多于一个是氢,更优选E连接的Q均不为氢。当Q是取代芳基时,则更优选芳基被链烯基和炔基取代。最优选Q基包括(苯乙炔基)苯基、双(苯乙炔基)苯基、苯乙炔基(苯乙炔基)苯基和(苯乙炔基)苯基苯基部分。优选作为Gw的芳基包括苯基、联苯基和三联苯基。更优选的Gw基团是苯基。优选w是1。It can be understood that when w in the above formula II or the following formulas IV, VI, VII, VIII or IX is 0, two clathrate compounds are directly bonded. For each E to which at least one Q is attached, preferably no more than one Q to which E is attached is hydrogen, more preferably none of the Qs to which E is attached is hydrogen. When Q is a substituted aryl, then more preferably the aryl is substituted with alkenyl and alkynyl. Most preferred Q groups include (phenylethynyl)phenyl, bis(phenylethynyl)phenyl, phenylethynyl(phenylethynyl)phenyl and (phenylethynyl)phenylphenyl moieties. Preferred aryl groups as Gw include phenyl, biphenyl and terphenyl. A more preferred Gw group is phenyl. Preferably w is 1.

本发明还包括一种使用上述组合物的方法。一种方法包括以下步骤:分解成孔剂;并将已分解的成孔剂挥发,由此降低了介电材料的介电常数。另一种方法包括以下步骤:分解成孔剂;将已分解的成孔剂挥发,由此在介电材料中形成孔。The invention also includes a method of using the composition described above. One method includes the steps of: decomposing the porogen; and volatilizing the decomposed porogen, thereby lowering the dielectric constant of the dielectric material. Another method includes the steps of: decomposing the porogen; and volatilizing the decomposed porogen, thereby forming pores in the dielectric material.

我们还研发出一种组合物,所述组合物包括:We have also developed a composition comprising:

(a)具有至少双官能团的化合物,其中所述双官能团可相同或不同,并且第一官能团和第二官能团中的至少一个选自含硅基团、含氮基团、含碳氧键基团、羟基和含碳碳双键基团;和(a) a compound having at least two functional groups, wherein the two functional groups may be the same or different, and at least one of the first functional group and the second functional group is selected from a silicon-containing group, a nitrogen-containing group, a carbon-oxygen bond-containing group , hydroxyl and carbon-carbon double bond groups; and

(b)包含至少两个稠合芳环的成孔剂,其中所述稠合芳环上各自具有至少一个烷基取代基且在相邻芳环上的至少两个烷基取代基间存在键。(b) A porogen comprising at least two fused aromatic rings, wherein each of the fused aromatic rings has at least one alkyl substituent and there is a bond between at least two alkyl substituents on adjacent aromatic rings .

附图简述Brief description of the drawings

图1A至图1F举例说明如何制备在本发明组合物中用作热固性组分的C10金刚烷基组合物。Figures 1A-1F illustrate how to prepare C10 adamantyl compositions for use as thermosetting components in the compositions of the present invention.

图2举例说明一种制备在本发明组合物中用作热固性组分的C14金刚烷基组合物的方法。Figure 2 illustrates a method of preparing a C14 adamantyl composition for use as a thermosetting component in the composition of the present invention.

图3A至3F举例说明另一种制备在本发明组合物中用作热固性组分的C14金刚烷基组合物的方法。Figures 3A to 3F illustrate another method of preparing a C14 adamantyl composition useful as a thermosetting component in the compositions of the present invention.

图4显示了本发明实施例44-47的薄膜的横截面的扫描电镜图。Figure 4 shows the scanning electron micrographs of the cross-sections of the films of Examples 44-47 of the present invention.

图5显示了本发明实施例44-47的薄膜的表面的扫描电镜图。Figure 5 shows the scanning electron micrographs of the surface of the films of Examples 44-47 of the present invention.

图6显示本发明实施例46-49的热解吸质谱图。Figure 6 shows the thermal desorption mass spectra of Examples 46-49 of the present invention.

发明详述Detailed description of the invention

在我们的与本发明申请同时提交的专利申请10/158548中要求保护热固性组分和与其结合的成孔剂的组合物。Compositions of thermosetting components and porogens associated therewith are claimed in our patent application 10/158548 filed concurrently with the present application.

介电材料Dielectric material

可将已知的介电材料如无机、有机或有机和无机杂化物材料与下述成孔剂一起使用。这些介电材料的实例包括苯基乙炔基化的芳族单体或低聚体;氟化或非氟化的聚亚芳醚,如在共同转让的美国专利5,986,045、6,124,421、6,291,628和6,303,733中所述;双苯并环丁烯;和有机硅氧烷,如2002年2月19日提交的共同转让的待审批美国专利申请10/078,919。Known dielectric materials such as inorganic, organic or organic and inorganic hybrid materials can be used together with the porogens described below. Examples of these dielectric materials include phenylethynylated aromatic monomers or oligomers; fluorinated or non-fluorinated polyarylene ethers, as disclosed in commonly assigned U.S. Patent Nos. 5,986,045, 6,124,421, 6,291,628, and 6,303,733 bisbenzocyclobutene; and organosiloxanes, such as commonly assigned copending US patent application 10/078,919, filed February 19, 2002.

本文中使用的术语“笼形结构”、“笼形分子”和“笼形化合物”可互换使用,其意是指至少有8个原子的分子,这8个原子的排列使得至少存在一个桥键共价连接环系统的二个或多个原子。换句话说,笼形结构、笼形分子或笼形化合物包括许多由共价键合的原子连接而成的环,其中所述结构、分子或化合物限定了一个空间,以致于位于该空间内的点不穿过环就不能离开。所述桥键和/或环系统可包括一个或多个杂原子,可包含芳族基团、部分环状或非环状饱和烃基,或环状或非环状不饱和烃基。其它笼形结构还可包括富勒烯和具有至少一个桥键的冠醚。例如,C10金刚烷或C14金刚烷被认为是笼形结构,而依据该定义,萘或芳族螺环化合物就不是笼形结构,因为萘或芳族螺环化合物不含一个或多个桥键,因此没有落在上述笼形化合物的定义范围内。笼形化合物优选为C10金刚烷和C14金刚烷,更优选C10金刚烷。As used herein, the terms "cage structure", "cage molecule" and "cage compound" are used interchangeably and mean a molecule having at least 8 atoms arranged such that there is at least one bridge A bond covalently connects two or more atoms of a ring system. In other words, a cage structure, cage molecule or clathrate compound comprises a number of rings joined by covalently bonded atoms, wherein the structure, molecule or compound defines a space such that Points cannot leave without passing through the ring. The bridge and/or ring system may include one or more heteroatoms, may comprise an aromatic group, part of a cyclic or acyclic saturated hydrocarbon group, or a cyclic or acyclic unsaturated hydrocarbon group. Other cage structures may also include fullerenes and crown ethers with at least one bridge. For example, a C 10 adamantane or a C 14 adamantane is considered a cage structure, whereas a naphthalene or an aromatic spiro compound is not a cage structure by this definition because naphthalene or an aromatic spiro compound does not contain one or more Bridge bonds, therefore do not fall within the definition of clathrates above. The clathrate compound is preferably C 10 adamantane and C 14 adamantane, more preferably C 10 adamantane.

本文中使用的术语“桥头碳”是指与三个其他碳键合的任何笼形结构碳。这样,例如C10金刚烷有4个桥头碳,而C14金刚烷有8个桥头碳。As used herein, the term "bridgehead carbon" refers to any cage carbon that is bonded to three other carbons. Thus, for example, C10 adamantane has 4 bridgehead carbons and C14 adamantane has 8 bridgehead carbons.

优选的介电材料为在以下专利申请中公开并要求保护的热固性组分:2002年1月8日提交的我们共同转让的待审批专利申请60/347195、在与本发明申请同时提交的60/384303和2003年1月3日提交的P-106878。这些专利申请通过引用其整体内容而结合到本文中来。Preferred dielectric materials are the thermoset compositions disclosed and claimed in our commonly assigned co-pending patent application 60/347195 filed January 8, 2002, 60/347195 filed concurrently with the present application. 384303 and P-106878 filed January 3, 2003. These patent applications are hereby incorporated by reference in their entirety.

优选本发明组合物包括:(a)至少一种式III的C10金刚烷单体Preferably the compositions of the present invention comprise: (a) at least one C 10 adamantane monomer of formula III

和(b)至少一种式IV的C10金刚烷低聚物或聚合物and (b) at least one C 10 adamantane oligomer or polymer of formula IV

或(a)至少一种式V的C14金刚烷单体or (a) at least one C adamantane monomer of formula V

和(b)至少一种式VI的C14金刚烷单体的低聚物或聚合物and (b) an oligomer or polymer of at least one C adamantane monomer of formula VI

其中Q、Gw、h、i、j和w的定义同前。The definitions of Q, G w , h, i, j and w are the same as above.

在上式IV中,当h、i和j全为0时,C10金刚烷二聚体如下式VII所示:In the above formula IV, when h, i and j are all 0, the C10 adamantane dimer is shown in the following formula VII:

其中Q和Gw的定义同前。当式VII中w为0时,C10金刚烷二聚体的实例在下表2中列出。Wherein Q and Gw are as defined above. When w is 0 in Formula VII, examples of C 10 adamantane dimers are listed in Table 2 below.

表2Table 2

当式VII中w优选为1时,优选的二聚体的实例在下表3中列出。When w is preferably 1 in formula VII, examples of preferred dimers are listed in Table 3 below.

表3table 3

上式IV中,当h为1和i和j为0时,C10金刚烷三聚体如下式VIII所示:In the above formula IV, when h is 1 and i and j are 0, the C10 adamantane trimer is shown in the following formula VIII:

Figure A0380593800392
Figure A0380593800392

其中Q和Gw的定义同前。当式VIII中w优选为1时,优选的三聚体的实例在下表4中列出。Wherein Q and Gw are as defined above. When w is preferably 1 in formula VIII, examples of preferred trimers are listed in Table 4 below.

表4Table 4

Figure A0380593800393
Figure A0380593800393

Figure A0380593800411
Figure A0380593800411

Figure A0380593800441
Figure A0380593800441

Figure A0380593800451
Figure A0380593800451

优选本发明组合物包括上式VI的至少一种低聚物或聚合物,其中Q、G、h、i、j和w的定义同前。当上式VI中h、i和j全为0时,C14金刚烷二聚体如下式IX所示:Preferably, the composition of the invention comprises at least one oligomer or polymer of formula VI above, wherein Q, G, h, i, j and w are as defined above. When h, i and j are all 0 in the above formula VI, the C14 adamantane dimer is shown in the following formula IX:

Figure A0380593800471
Figure A0380593800471

其中Q和Gw的定义同前。Wherein Q and Gw are as defined above.

优选热固性组分(a)包括:(1)式XA的C10金刚烷单体Preferably the thermosetting component (a) comprises: (1) a C 10 adamantane monomer of formula XA

Figure A0380593800472
Figure A0380593800472

式XBFormula XB

Figure A0380593800473
Figure A0380593800473

式XCFormula XC

Figure A0380593800481
Figure A0380593800481

或XDor XD

和(2)式XI的C10金刚烷低聚物或聚合物and (2) the C 10 adamantane oligomer or polymer of formula XI

和优选下式的C10金刚烷低聚物或聚合物and preferably a C 10 adamantane oligomer or polymer of the formula

或(1)式XIIA的C14金刚烷单体Or (1) the C adamantane monomer of formula XIIA

式XIIBFormula XIIB

式XIICFormula XIIC

式XIIDFormula XIID

Figure A0380593800511
Figure A0380593800511

和(2)式XIII的C14金刚烷低聚物或聚合物and (2) C adamantane oligomers or polymers of formula XIII

和优选下式的C14金刚烷低聚物或聚合物,and preferably a C adamantane oligomer or polymer of the formula,

其中h为0-10;i为0-10;j为0-10;在式XA、XB、XC、XD、XI、XIIA、XIIB、XIIC和XIID中各R1相同或不同并选自氢、卤素、烷基、芳基、取代芳基、芳杂基、芳醚、链烯基、炔基、烷氧基、羟烷基、羟芳基、羟链烯基、羟炔基、羟基或羧基;在式XA、XB、XC、XD、XI、XIIA、XIIB、XIIC和XIID中每个Y相同或不同并选自氢、烷基、芳基、取代芳基或卤素。wherein h is 0-10; i is 0-10; j is 0-10; in formulas XA, XB, XC, XD, XI, XIIA, XIIB, XIIC and XIID each R is the same or different and is selected from hydrogen, Halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy or carboxyl ; in formulas XA, XB, XC, XD, XI, XIIA, XIIB, XIIC and XIID, each Y is the same or different and is selected from hydrogen, alkyl, aryl, substituted aryl or halogen.

式II、IV、VI、XI和XIII表示任意或无规则结构,其中h、i和j中任何一种单元在另一单元前可以或不必重复多次。因此,上式II、IV、VI、XI和XIII的单元顺序是任意或无规则的。Formulas II, IV, VI, XI and XIII represent arbitrary or random structures in which any one unit of h, i and j may or may not be repeated multiple times before the other unit. Thus, the order of the units of formulas II, IV, VI, XI and XIII above is arbitrary or random.

在一个实施方案中,优选所述热固性组分包括上式XA、XB、XC和XD的C10金刚烷单体和上述XI的至少1种C10金刚烷低聚物或聚合物,其中h、i和j的至少一个至少为1。优选所述热固性组分包括上式XIIA、XIIB、XIIC或XIID的C14金刚烷单体和上式XIII的至少1种C14金刚烷低聚物或聚合物,其中h、i和j的至少一个至少为1。In one embodiment, it is preferred that the thermosetting component comprises a C 10 adamantane monomer of formulas XA, XB, XC and XD above and at least one C 10 adamantane oligomer or polymer of XI above, wherein h, At least one of i and j is at least 1. Preferably, the thermosetting component comprises a C14 adamantane monomer of the above formula XIIA, XIIB, XIIC or XIID and at least one C14 adamantane oligomer or polymer of the above formula XIII, wherein h, i and j are at least One is at least 1.

优选热固性组分包括上式XA、XB、XC或XD的C10金刚烷单体和下式XIV的C10金刚烷低聚物或聚合物,其中R1、Y和w如上定义且h为0或1。A preferred thermosetting component comprises a C 10 adamantane monomer of formula XA, XB, XC or XD above and a C 10 adamantane oligomer or polymer of formula XIV below wherein R 1 , Y and w are as defined above and h is 0 or 1.

Figure A0380593800531
Figure A0380593800531

优选C10金刚烷低聚物或聚合物结构如下式所示:The preferred C10 adamantane oligomer or polymer structure is shown in the following formula:

Figure A0380593800532
Figure A0380593800532

优选热固性组分包括上式XIIA、XIIB、XIIC或XIID的C14金刚烷单体和下式XV的C14金刚烷低聚物或聚合物,其中R1、Y和w的定义同上且h为0或1。A preferred thermosetting component comprises a C14 adamantane monomer of formula XIIA, XIIB, XIIC or XIID above and a C14 adamantane oligomer or polymer of formula XV below, wherein R1 , Y and w are as defined above and h is 0 or 1.

Figure A0380593800541
Figure A0380593800541

优选C14金刚烷低聚物或聚合物结构如下式所示:Preferred C 14 adamantane oligomer or polymer structure is shown in the following formula:

Figure A0380593800542
Figure A0380593800542

优选热固性组分包括上式XA、XB、XC或XD的C10金刚烷单体和下式XVI的C10金刚烷二聚体,其中R1、Y和w的定义同上。A preferred thermosetting component comprises a C 10 adamantane monomer of formula XA, XB, XC or XD above and a C 10 adamantane dimer of formula XVI below, wherein R 1 , Y and w are as defined above.

Figure A0380593800551
Figure A0380593800551

优选C10金刚烷二聚体如下式所示:A preferred C10 adamantane dimer is represented by the following formula:

Figure A0380593800552
Figure A0380593800552

优选热固性组分包括上式XIIA、XIIB、XIIC或XIID的C14金刚烷单体和下式XVII的C14金刚烷二聚体,其中R1、Y和w的定义同上。A preferred thermosetting component comprises a C 14 adamantane monomer of formula XIIA, XIIB, XIIC or XIID above and a C 14 adamantane dimer of formula XVII below, wherein R 1 , Y and w are as defined above.

Figure A0380593800561
Figure A0380593800561

优选C14金刚烷二聚体如下式所示:A preferred C14 adamantane dimer is represented by the following formula:

应理解上表2、3和4中例举的取代类型也可出现在四聚体和更高级的低聚物中。It should be understood that the substitution patterns exemplified in Tables 2, 3 and 4 above may also occur in tetramers and higher oligomers.

优选热固性组分包括上式XA、XB、XC或XD的C10金刚烷单体和下式XVIII的C10金刚烷三聚体,其中R1、Y和w的定义同上。A preferred thermosetting component comprises a C 10 adamantane monomer of formula XA, XB, XC or XD above and a C 10 adamantane trimer of formula XVIII below, wherein R 1 , Y and w are as defined above.

优选C10金刚烷三聚体如下式所示:A preferred C10 adamantane trimer is represented by the following formula:

Figure A0380593800572
Figure A0380593800572

优选热固性组分包括上式XIIA、XIIB、XIIC或XIID的C14金刚烷单体和下式XIX的C14金刚烷三聚体。Preferred thermosetting components include a C 14 adamantane monomer of formula XIIA, XIIB, XIIC or XIID above and a C 14 adamantane trimer of formula XIX below.

优选C14金刚烷三聚体如下式所示:The preferred C14 adamantane trimer is shown in the following formula:

优选热固性组分包括上式XA、XB、XC或XD的C10金刚烷单体、上式XVI的C10金刚烷二聚体和上式XI的至少一种C10金刚烷低聚物或聚合物,其中h、i和j中至少一个至少是1。优选热固性组分包括上式XIIA、XIIB、XIIC或XIID的C14金刚烷单体、上式XVII的C14金刚烷二聚体和上式XIII的至少一种C14金刚烷低聚物或聚合物,其中h、i和j中至少一个至少是1。Preferably, the thermosetting component comprises a C 10 adamantane monomer of formula XA, XB, XC or XD above, a C 10 adamantane dimer of formula XVI above, and at least one C 10 adamantane oligomer or polymer of formula XI above wherein at least one of h, i, and j is at least 1. Preferably, the thermosetting component comprises a C14 adamantane monomer of formula XIIA, XIIB, XIIC or XIID above, a C14 adamantane dimer of formula XVII above, and at least one C14 adamantane oligomer or polymer of formula XIII above wherein at least one of h, i, and j is at least 1.

优选热固性组分包括上式XA、XB、XC或XD的C10金刚烷单体、上式XVI的C10金刚烷二聚体、上式XVIII的C10金刚烷三聚体和上式XI的至少一种C10金刚烷低聚物或聚合物,其中i和j中至少一个至少是1。优选热固性组分包括上式XIIA、XIIB、XIIC或XIID的C14金刚烷单体、上式XVII的C14金刚烷二聚体、上式XIX的C14金刚烷三聚体和上式XIII的至少一种C14金刚烷低聚物或聚合物,其中i和j中至少一个至少是1。Preferred thermosetting components include C 10 adamantane monomers of formula XA, XB, XC or XD above, C 10 adamantane dimers of formula XVI above, C 10 adamantane trimers of formula XVIII above, and C 10 adamantane trimers of formula XI above. At least one C 10 adamantane oligomer or polymer wherein at least one of i and j is at least 1. Preferred thermosetting components include C adamantane monomers of formula XIIA, XIIB, XIIC or XIID above, C adamantane dimers of formula XVII above, C adamantane trimers of formula XIX above, and C adamantane trimers of formula XIII above . at least one C adamantane oligomer or polymer, wherein at least one of i and j is at least 1.

热固性组分包括式XA的四取代的C10金刚烷单体或式XIIA的四取代的C14金刚烷单体。优选的单体是式XA的C10金刚烷单体。C10金刚烷骨架在1、3、5和7位都有取代芳基。式XI的化合物是式XA的C10金刚烷单体通过未取代和/或取代芳基单元连接而成的低聚物或聚合物。式XIII的化合物是式XIIA的C14金刚烷单体通过未取代和/或取代芳基单元连接而成的低聚物或聚合物。一般情况下,h、i和j是0-10,优选0-5,更优选0-2的所有数字。因此,最简单的C10金刚烷低聚物为如上式XVI所示的二聚体(式XI中h为0、i为0和j为0),其中两个C10金刚烷骨架通过未取代或取代芳基单元连接。最简单的C14金刚烷低聚物为如上式XVII所示的二聚体(式XIII中h为0、i为0和j为0),其中两个C14金刚烷骨架通过未取代或取代芳基单元连接。The thermosetting component includes a tetra-substituted C 10 adamantane monomer of Formula XA or a tetra-substituted C 14 adamantane monomer of Formula XIIA. A preferred monomer is a C 10 adamantane monomer of formula XA. The C 10 adamantane skeleton has substituted aryl groups at positions 1, 3, 5 and 7. The compound of formula XI is an oligomer or polymer formed by linking C 10 adamantane monomers of formula XA through unsubstituted and/or substituted aryl units. The compound of formula XIII is an oligomer or polymer formed by linking C 14 adamantane monomers of formula XIIA through unsubstituted and/or substituted aryl units. Generally, h, i and j are all numbers from 0-10, preferably 0-5, more preferably 0-2. Therefore, the simplest C 10 adamantane oligomer is a dimer as shown in formula XVI above (h is 0, i is 0 and j is 0 in formula XI), in which two C 10 adamantane skeletons are unsubstituted through or substituted aryl unit linkage. The simplest C 14 adamantane oligomer is a dimer as shown in the above formula XVII (h is 0, i is 0 and j is 0 in formula XIII), wherein two C 14 adamantane skeletons are unsubstituted or substituted The aryl units are linked.

在另一个实施方案中,优选本发明的热固性组分包括上式XI的至少一种C10金刚烷低聚物或聚合物,其中h为0-10、i为0-10和j为0-10。优选本发明的热固性组分包括上式XIII的至少一种C14金刚烷低聚物或聚合物,其中h为0-10、i为0-10和j为0-10。In another embodiment, it is preferred that the thermosetting component of the present invention comprises at least one C 10 adamantane oligomer or polymer of formula XI above, wherein h is 0-10, i is 0-10 and j is 0-10. 10. Preferably, the thermoset component of the present invention comprises at least one C14 adamantane oligomer or polymer of formula XIII above, wherein h is 0-10, i is 0-10 and j is 0-10.

优选本发明的热固性组分包括上式XI的至少一种C10金刚烷低聚物或聚合物,其中h为0或1、i为0和j为0。该C10金刚烷结构如上式XIV所示。Preferably, the thermoset component of the present invention comprises at least one C10 adamantane oligomer or polymer of formula XI above, wherein h is 0 or 1, i is 0 and j is 0. The C 10 adamantane structure is shown in Formula XIV above.

优选本发明的热固性组分包括上式XIII的至少一种C14金刚烷低聚物或聚合物,其中h为0或1、i为0和j为0。该C14金刚烷结构如上式XV所示。Preferably, the thermoset component of the present invention comprises at least one C14 adamantane oligomer or polymer of formula XIII above, wherein h is 0 or 1, i is 0 and j is 0. The C 14 adamantane structure is shown in Formula XV above.

优选本发明的热固性组分包括上式XI的至少一种C10金刚烷低聚物或聚合物,其中h为0、i为0和j为0。该C10金刚烷二聚体如上式XVI所示。Preferably, the thermoset component of the present invention comprises at least one C10 adamantane oligomer or polymer of formula XI above, wherein h is 0, i is 0 and j is 0. The C 10 adamantane dimer is shown in Formula XVI above.

优选所述热固性组分包括上式XIII的至少一种C14金刚烷低聚物或聚合物,其中h为0、i为0和j为0。该C14金刚烷二聚体如上式XVII所示。Preferably the thermosetting component comprises at least one C14 adamantane oligomer or polymer of formula XIII above, wherein h is 0, i is 0 and j is 0. The C 14 adamantane dimer is shown in formula XVII above.

优选所述热固性组分包括上式XI的至少一种C10金刚烷低聚物或聚合物,其中h为1、i为0和j为0。该C10金刚烷三聚体如上式XVIII所示。Preferably the thermosetting component comprises at least one C 10 adamantane oligomer or polymer of formula XI above, wherein h is 1, i is 0 and j is 0. The C 10 adamantane trimer is shown in Formula XVIII above.

优选所述热固性组分(a)包括上式XIII的至少一种C14金刚烷低聚物或聚合物,其中h为1、i为0和j为0。该C14金刚烷三聚体如上式XIX所示。Preferably the thermosetting component (a) comprises at least one C14 adamantane oligomer or polymer of formula XIII above, wherein h is 1, i is 0 and j is 0. The C 14 adamantane trimer is shown in formula XIX above.

优选所述热固性组分包括上式XI的至少一种C10金刚烷低聚物或聚合物的混合物,其中h为2、i为0和j为0(线形低聚物或聚合物)和h为0、i为1和j为0(支化低聚物或聚合物)。因此,所述组合物包括如下式XX所示的线形C10金刚烷四聚体的混合物,其中R1、Y和w定义同上。Preferably the thermosetting component comprises a mixture of at least one C 10 adamantane oligomer or polymer of formula XI above, wherein h is 2, i is 0 and j is 0 (linear oligomer or polymer) and h is 0, i is 1 and j is 0 (branched oligomer or polymer). Thus, the composition comprises a mixture of linear C 10 adamantane tetramers represented by the following formula XX, wherein R 1 , Y and w are as defined above.

优选线形C10金刚烷四聚体为如下式所示的可聚体:Preferably, the linear C10 adamantane tetramer is a polymerizable body represented by the formula:

Figure A0380593800602
Figure A0380593800602

和如下式XXI所示的C10金刚烷支化四聚体:and a C 10 adamantane branched tetramer of formula XXI as follows:

和如下式所示的优选支化的C10金刚烷四聚体:and a preferably branched C10 adamantane tetramer represented by the formula:

优选所述热固性组分包括上式XIII的至少一种C14金刚烷低聚物或聚合物,其中h为2、i为0和j为0(得到线形低聚物或聚合物)和h为0、i为1和j为0(得到支化低聚物或聚合物)。因此,本发明组合物包括如下式XXII所示的C14金刚烷线形四聚体,其中R1、Y和w的定义同上。Preferably the thermosetting component comprises at least one C adamantane oligomer or polymer of formula XIII above, wherein h is 2, i is 0 and j is 0 (to give a linear oligomer or polymer) and h is 0, i is 1 and j is 0 (resulting in a branched oligomer or polymer). Therefore, the composition of the present invention includes a C 14 adamantane linear tetramer represented by the following formula XXII, wherein R 1 , Y and w are as defined above.

Figure A0380593800621
Figure A0380593800621

优选线形C14金刚烷四聚体为下式所示的C14金刚烷四可聚体:A preferred linear C 14 adamantane tetramer is a C 14 adamantane tetramer represented by the formula:

Figure A0380593800622
Figure A0380593800622

和如下式XXIII所示的C14金刚烷支化四聚体:and a C adamantane branched tetramer of formula XXIII as follows:

和如下式所示的优选支化的C14金刚烷四聚体:and a preferably branched C adamantane tetramer represented by the formula:

Figure A0380593800641
Figure A0380593800641

优选热固性组分包括上式XVI的C10金刚烷二聚体和上式XVIII的C10金刚烷三聚体。优选热固性组分包括上式XVII的C14金刚烷二聚体和上式XIX的C14金刚烷三聚体。Preferred thermoset components include the C 10 adamantane dimer of formula XVI above and the C 10 adamantane trimer of formula XVIII above. Preferred thermoset components include the C14 adamantane dimer of formula XVII above and the C14 adamantane trimer of formula XIX above.

优选热固性组分包括上式XVI的C10金刚烷二聚体和上式XI的至少一种C10金刚烷低聚物或聚合物,其中h为0、i至少为1和j为0。优选热固性组分包括上式XVII的C14金刚烷二聚体和上式XIII的至少一种C14金刚烷低聚物或聚合物,其中h为0、i至少为1和j为0且w为0或1。Preferred thermoset components include a C 10 adamantane dimer of formula XVI above and at least one C 10 adamantane oligomer or polymer of formula XI above, wherein h is 0, i is at least 1 and j is 0. A preferred thermosetting component comprises a C14 adamantane dimer of formula XVII above and at least one C14 adamantane oligomer or polymer of formula XIII above, wherein h is 0, i is at least 1 and j is 0 and w is 0 or 1.

在上述两实施方案中,对于上式I和II而言,优选Q基团包括芳基和被链烯基和炔基取代的芳基,更优选Q基团包括(苯乙炔基)苯基、双(苯乙炔基)苯基、苯乙炔基(苯乙炔基)苯基和(苯乙炔基)苯基苯基部分。优选Gw的芳基包括苯基、联苯基和三联苯基。更优选的Gw基团是苯基。In the above two embodiments, for the above formulas I and II, it is preferred that the Q group includes aryl and aryl substituted by alkenyl and alkynyl, more preferably the Q group includes (phenylethynyl)phenyl, Bis(phenylethynyl)phenyl, phenylethynyl(phenylethynyl)phenyl and (phenylethynyl)phenylphenyl moieties. Preferred aryl groups for Gw include phenyl, biphenyl and terphenyl. A more preferred Gw group is phenyl.

在上式XA、XB、XC、XD、XI、XIIA、XIIB、XIIC、XIID、XIII、XIV、XV、XVI、XVII、XVIII、XIX、XX、XXI、XXII和XXIII中,连接在R1≡C-型C10金刚烷环或C14金刚烷环的苯环上的乙炔取代基中的每个R1基相同或不同。R1选自氢、卤素、烷基、芳基、取代芳基、杂芳基、芳醚、链烯基、炔基、烷氧基、羟烷基、羟基芳基、羟链烯基、羟炔基、羟基或羧基。每个R1可为非支化或支化和无取代或取代,所述取代基可为非支化或支化。优选包含约2-10个碳原子的烷基、链烯基、炔基、烷氧基、羟烷基、羟链烯基和羟炔基和包含约6-18个碳原子的芳基、芳醚和羟芳基。如果R1表示芳基,则优选R1是苯基。优选连接在苯环上的至少两个R1C≡C基团是两种不同的异构体。至少两种不同的异构体的实例包括间位、对位和邻位异构体。优选至少两种不同的异构体是间位和对位异构体。优选的单体1,3,5,7-四[3′/4′-(苯乙炔基)苯基]C10金刚烷(图1D所示)具有5种异构体形式:(1)对位-,对位-,对位-,对位-;(2)对位-,对位-,对位-,间位-;(3)对位-,对位-,间位-,间位-;(4)对位-,间位-,间位-,间位-;(5)间位-,间位-,间位-,间位-。In the above formulas XA, XB, XC, XD, XI, XIIA, XIIB, XIIC, XIID, XIII, XIV, XV, XVI, XVII, XVIII, XIX, XX, XXI, XXII and XXIII, attached at R1≡C Each R group in the acetylene substituent on the benzene ring of the -type C 10 adamantane ring or C 14 adamantane ring is the same or different. R is selected from hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxy Alkynyl, hydroxyl or carboxyl. Each R 1 can be unbranched or branched and unsubstituted or substituted, and the substituents can be unbranched or branched. Preferred are alkyl, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyalkenyl and hydroxyalkynyl groups containing about 2 to 10 carbon atoms and aryl, aryl, and aryl groups containing about 6 to 18 carbon atoms. ethers and hydroxyaryls. If R 1 represents aryl, it is preferred that R 1 is phenyl. Preferably at least two R 1 C≡C groups attached to the benzene ring are two different isomers. Examples of at least two different isomers include meta, para and ortho isomers. Preferably the at least two different isomers are meta and para isomers. The preferred monomer 1,3,5,7-tetrakis[3'/4'-(phenylethynyl)phenyl] C10adamantane (shown in Figure 1D) has 5 isomeric forms: (1) for Position-, Para-position-, Para-position-, Para-position-; (2) Para-position-, Para-position-, Para-position-, Meta-position-; (3) Paraposition-, Paraposition-, Meta-position, Space Position-; (4) para-, meta-, meta-, meta-; (5) meta-, meta-, meta-, meta-.

在上式XA、XB、XC、XD、XI、XIIA、XIIB、XIIC、XIID、XIII、XIV、XV、XVI、XVII、XVIII、XIX、XX、XXI、XXII和XXIII的苯环上的每个Y相同或不同并选自氢、烷基、芳基、取代芳基或卤素。当Y是芳基时,芳基的实例包括苯基或联苯基。Y优选选自氢、苯基和联苯基,更优选为氢。优选在C10金刚烷或C14金刚烷的两个桥头碳原子间的至少一个苯基存在至少两种不同的异构体。至少两种不同的异构体的实例包括间位-、对位-和邻位-异构体。优选至少两种异构体是间位-和对位-异构体。最优选的二聚体1,3/4-双{1′,3′,5′-三[3″/4″-(苯乙炔基)苯基]C10金刚烷-7′-基}苯(图1F所示)具有如下14种异构体。优选位于C10金刚烷的两个桥头碳原子间的苯基以间位-和对位-异构体形式存在。对于前面两种异构体的每一种,苯基上的R1C≡C基团存在如下7种异构体:(1)对位-,对位-,对位-,对位-,对位-,对位-;(2)对位-,对位-,对位-,对位-,对位-,间位-;(3)对位-,对位-,对位-,对位-,间位-,间位-;(4)对位-,对位-,对位-,间位-,间位-,间位-;(5)对位-,对位-,间位-,间位-,间位-,间位-;(6)对位-,间位-,间位-,间位-,间位-,间位-;和(7)间位-,间位-,间位-,间位-,间位-,间位-。Each Y on the benzene ring of the above formulas XA, XB, XC, XD, XI, XIIA, XIIB, XIIC, XIID, XIII, XIV, XV, XVI, XVII, XVIII, XIX, XX, XXI, XXII and XXIII same or different and selected from hydrogen, alkyl, aryl, substituted aryl or halogen. When Y is an aryl group, examples of the aryl group include phenyl or biphenyl. Y is preferably selected from hydrogen, phenyl and biphenyl, more preferably hydrogen. It is preferred that at least two different isomers exist in at least one phenyl group between two bridgehead carbon atoms of the C 10 adamantane or C 14 adamantane. Examples of at least two different isomers include meta-, para- and ortho-isomers. Preferably at least two isomers are meta- and para-isomers. The most preferred dimer 1,3/4-bis{1′,3′,5′-tris[3″/4″-(phenylethynyl)phenyl]C 10 adamantane-7′-yl}benzene (shown in Figure 1F) has the following 14 isomers. Preferably, the phenyl group located between the two bridgehead carbon atoms of the C 10 adamantane exists as meta- and para-isomers. For each of the previous two isomers, the R 1 C≡C group on the phenyl group has the following 7 isomers: (1) para-, para-, para-, para-, Para-, para-; (2) para-, para-, para-, para-, para-, meta-; (3) para-, para-, para-, Para-, meta-, meta-; (4) para-, para-, para-, meta-, meta-, meta-; (5) para-, para-, Meta-, Meta-, Meta-, Meta-; (6) Para-, Meta-, Meta-, Meta-, Meta-, Meta-; and (7) Meta- , Meta-, Meta-, Meta-, Meta-, Meta-.

除上式XXI的支化C10金刚烷结构以外,应理解当h为0、i为0和j为1时,上述式XI表示进一步支化为如下式XXIV所示的支链结构,其中R1、Y和w如上定义。应理解支化可超出式XXIV的结构,因为式XXIV结构的支链C10金刚烷单元也可进一步支化。In addition to the branched C 10 adamantane structure of the above formula XXI, it should be understood that when h is 0, i is 0 and j is 1, the above formula XI represents further branching into a branched chain structure as shown in the following formula XXIV, wherein R 1. Y and w are as defined above. It is understood that branching can go beyond the structure of Formula XXIV, as the branched C 10 adamantane units of the structure of Formula XXIV can also be further branched.

优选所述C10金刚烷结构如下式所示:Preferably, the C10 adamantane structure is shown in the following formula:

除上式XXIII的支化C14金刚烷结构以外,应理解当h为0、i为0和j为1时,上式XIII表示进一步支化为如下式XXV所示的支链结构。应理解支化可超出式XXV的结构,因为式XXV结构的支链C14金刚烷单元也可进一步支化。In addition to the branched C14 adamantane structure of the above formula XXIII, it should be understood that when h is 0, i is 0 and j is 1, the above formula XIII represents further branching into a branched chain structure as shown in the following formula XXV. It is understood that branching can go beyond the structure of Formula XXV, as the branched C adamantane units of the structure of Formula XXV can also be further branched.

Figure A0380593800681
Figure A0380593800681

优选所述C14金刚烷结构如下式所示:Preferably, the C14 adamantane structure is shown in the following formula:

Figure A0380593800691
Figure A0380593800691

在热固性组分中,单体和低聚物或聚合物含量通过下述分析试验方法部分中的凝胶渗透色谱法技术测定。本发明组合物包括:C10金刚烷或C14金刚烷单体,其量约为30至70面积%,更优选约40-60面积%并最优选约45至55面积%;和低聚物或聚合物,其量约为70-30面积%,更优选约60-40面积%,并最优选约55-45面积%。最优选本发明组合物包括:单体(1),其量约为50面积%;和低聚物或聚合物(2),其量约为50面积%。In the thermosetting components, the monomer and oligomer or polymer content is determined by the gel permeation chromatography technique described below in the Analytical Test Methods section. The compositions of the present invention comprise: a C 10 adamantane or a C 14 adamantane monomer in an amount of about 30 to 70 area percent, more preferably about 40-60 area percent and most preferably about 45 to 55 area percent; and an oligomer or polymer in an amount of about 70-30 area%, more preferably about 60-40 area%, and most preferably about 55-45 area%. Most preferably the composition of the invention comprises: a monomer (1) in an amount of about 50 area %; and an oligomer or polymer (2) in an amount of about 50 area %.

一般情况下,C10金刚烷或C14金刚烷单体(1)与低聚物或聚合物(2)的量的比值可通过恰当的方式确定,如在制备本发明的组合物时通过改变起始组分的摩尔比确定,通过调节反应条件确定,以及在沉淀/分离步骤通过改变非溶剂与溶剂的比例确定。In general, the ratio of the amount of C 10 adamantane or C 14 adamantane monomer (1) to oligomer or polymer (2) can be determined in an appropriate manner, such as by changing The molar ratio of the starting components is determined by adjusting the reaction conditions and by changing the ratio of non-solvent to solvent during the precipitation/isolation step.

优选制备热固性组分(a)的方法包括下述步骤。Preferably the process for preparing the thermosetting component (a) comprises the following steps.

在步骤(A)中,C10金刚烷或C14金刚烷与式XXVI的卤代苯化合物反应生成混合物,In step (A), C 10 adamantane or C 14 adamantane reacts with a halogenated benzene compound of formula XXVI to form a mixture,

Figure A0380593800701
Figure A0380593800701

其中Y选自氢、烷基、芳基、取代芳基或卤素并且Y1是卤素当使用C10金刚烷时,所述混合物包括至少一种上式III的单体和至少一种上式IV的低聚物或聚合物,其中h为0-10、i为0-10、j为0-10并且w为0或1,Q为氢或-C6H3Y1Y,其中Y1和Y如上定义。优选至少一种下式的低聚物或聚合物:wherein Y is selected from hydrogen, alkyl, aryl, substituted aryl or halogen and Y is halogen. When using a C10 adamantane, the mixture comprises at least one monomer of formula III above and at least one monomer of formula IV above The oligomer or polymer of wherein h is 0-10, i is 0-10, j is 0-10 and w is 0 or 1, Q is hydrogen or -C 6 H 3 Y 1 Y, wherein Y 1 and Y is as defined above. Preference is given to at least one oligomer or polymer of the formula:

Figure A0380593800702
Figure A0380593800702

或当使用C14金刚烷时,所述混合物包括至少一种上式V的单体和至少一种上式VI的低聚物或聚合物,其中h为0-10、i为0-10、j为0-10和w为0或1,Q为氢或-C6H5Y1Y,其中Y1和Y如上定义;并优选至少一种下式的低聚物或聚合物Or when using C 14 adamantane, the mixture includes at least one monomer of the above formula V and at least one oligomer or polymer of the above formula VI, wherein h is 0-10, i is 0-10, j is 0-10 and w is 0 or 1, Q is hydrogen or -C6H5Y1Y , wherein Y1 and Y are as defined above; and preferably at least one oligomer or polymer of the formula

本领域技术人员应理解反应可在除上式X和XVI所显示的C14金刚烷的桥头碳外的其它桥头碳原子上发生。It will be appreciated by those skilled in the art that the reaction can take place at other bridgehead carbon atoms than those of the C14 adamantane shown in Formulas X and XVI above.

在步骤(B)中,步骤(A)产生的混合物与式R1C≡CH的末端炔基反应。优选本发明方法形成了上式XA和XI或XIIA和XIII的组合物。In step (B), the mixture resulting from step (A) is reacted with a terminal alkynyl group of formula R 1 C≡CH. Preferably the process of the invention forms compositions of formulas XA and XI or XIIA and XIII above.

在步骤(A)中,C10金刚烷或C14金刚烷与式XXVI的卤代苯化合物反应。除卤基Y1和上述Y基团外,卤代苯化合物还可包含其它取代基。In step (A), a C 10 adamantane or a C 14 adamantane is reacted with a halobenzene compound of formula XXVI. In addition to the halo group Y1 and the aforementioned Y groups, the halobenzene compounds may also contain other substituents.

优选卤代苯化合物选自溴苯、二溴苯和碘苯。优选溴苯和/或二溴苯,更优选溴苯。Preferably the halobenzene compound is selected from bromobenzene, dibromobenzene and iodobenzene. Preference is given to bromobenzene and/or dibromobenzene, more preferably bromobenzene.

C10金刚烷或C14金刚烷与卤代苯化合物(步骤(A))的反应优选在Lewis酸催化剂存在下、通过Friedel-Crafts反应进行。虽然可使用所有常用Lewis酸催化剂,但优选所用Lewis酸催化剂包括至少一种选自氯化铝(III)(AlCl3)、溴化铝(III)(AlBr3)和碘化铝(III)(AlI3)的化合物。其中最优选氯化铝(III)(AlCl3)。尽管溴化铝(III)的Lewis酸酸性更强,但一般不优选使用,这是由于其升华温度较低,只有90℃。因此较如氯化铝(III)来说,溴化铝(III)更难规模化工业应用。The reaction of C 10 adamantane or C 14 adamantane with halobenzene compound (step (A)) is preferably carried out by Friedel-Crafts reaction in the presence of a Lewis acid catalyst. Although all common Lewis acid catalysts can be used, it is preferred that the Lewis acid catalyst used comprises at least one member selected from the group consisting of aluminum (III) chloride (AlCl 3 ), aluminum (III) bromide (AlBr 3 ) and aluminum (III) iodide ( AlI 3 ) compounds. Among them, aluminum(III) chloride (AlCl 3 ) is most preferred. Although the Lewis acid of aluminum(III) bromide is more acidic, it is generally not preferred for use due to its low sublimation temperature of only 90°C. Therefore, compared with aluminum(III) chloride, aluminum(III) bromide is more difficult to apply in large-scale industry.

在更优选的方面,Friedel-Crafts反应在第二种催化剂组分存在下完成。第二种催化剂组分优选包括至少一种化合物,其选自含有4-20个碳原子的卤代叔烷烃、4-20个碳原子的叔烷醇、4-20个碳原子的仲和叔烯烃和卤代叔烷基芳基化合物。具体地讲,第二种催化剂组分包括至少一种选自2-溴-2-甲基丙烷(叔丁基溴)、2-氯-2-甲基丙烷(叔丁基氯)、2-甲基-2-丙醇(叔丁基醇)、异丁烯、2-溴丙烷和叔丁基溴苯,最优选2-溴-2-甲基丙烷(叔丁基溴)。总的来说,包含5个或更多个碳原子的烷基的化合物较不适合,因为在反应后期反应溶液中会生成固体成分沉淀。In a more preferred aspect, the Friedel-Crafts reaction is carried out in the presence of a second catalyst component. The second catalyst component preferably comprises at least one compound selected from halogenated tertiary alkanes containing 4-20 carbon atoms, tertiary alkanols having 4-20 carbon atoms, secondary and tertiary alkanols having 4-20 carbon atoms Alkenes and halogenated tertiary alkylaryl compounds. Specifically, the second catalyst component includes at least one selected from the group consisting of 2-bromo-2-methylpropane (tert-butyl bromide), 2-chloro-2-methylpropane (tert-butyl chloride), 2- Methyl-2-propanol (tert-butyl alcohol), isobutylene, 2-bromopropane and tert-butylbromobenzene, most preferably 2-bromo-2-methylpropane (tert-butyl bromide). In general, compounds containing an alkyl group of 5 or more carbon atoms are less suitable because a solid component precipitates in the reaction solution at a later stage of the reaction.

最优选Lewis酸催化剂是氯化铝(III)(AlC13)和第二种催化剂组分是2-溴-2-甲基丙烷(叔丁基溴)或叔丁基溴苯。Most preferably the Lewis acid catalyst is aluminum (III) chloride (AlCl 3 ) and the second catalyst component is 2-bromo-2-methylpropane (tert-butyl bromide) or tert-butylbromobenzene.

Friedel-Crafts反应的优选步骤为通过将C10金刚烷或C14金刚烷、卤代苯化合物(如溴苯)和Lewis酸催化剂(如氯化铝)混合并在30℃-50℃,优选35℃-45℃,尤其是40℃下加热进行。温度低于30℃时,反应不能完成,例如将产生更高比例的三取代的C10金刚烷形式。可理解,原则上可使用较上述温度更高的温度(如60℃),但这将导致进行不需要的反应,使步骤(A)的反应混合物中非卤化的芳族原料(如苯)的比例更高。然后将催化剂系统的第二组分如叔丁基溴加至上述反应溶液中,通常加入持续时间为5-10小时,优选6-7小时,并在加入结束后,在上述指定的温度范围下将反应混合物充分混匀,通常进一步混合5-10小时,优选7小时。The preferred procedure of the Friedel-Crafts reaction is by mixing C 10 adamantane or C 14 adamantane, a halogenated benzene compound (such as bromobenzene) and a Lewis acid catalyst (such as aluminum chloride) and heating at 30°C-50°C, preferably 35 ℃-45℃, especially heating at 40℃. At temperatures below 30 °C, the reaction does not go to completion, eg a higher proportion of trisubstituted C10 adamantane forms will be produced. It will be appreciated that in principle higher temperatures (e.g. 60° C.) than the above mentioned temperatures can be used, but this will lead to undesired reactions which lead to the reduction of the non-halogenated aromatic starting material (e.g. benzene) in the reaction mixture of step (A). The proportion is higher. The second component of the catalyst system, such as tert-butyl bromide, is then added to the above reaction solution, usually for a duration of 5-10 hours, preferably 6-7 hours, and after the addition is complete, at the temperature range specified above The reaction mixture is mixed well, usually further mixed for 5-10 hours, preferably 7 hours.

令人惊讶的是,除四苯代化合物单体如1,3,5,7-四(3′/4′-溴苯)C10金刚烷以外,在步骤(A)后得到的混合物中还发现其低聚物或聚合物。完全没有预料到式III的C10金刚烷单体与式IV的C10金刚烷低聚物或聚合物的量比或式V的C14金刚烷单体与式VI的C14金刚烷低聚物或聚合物的量比可通过使用的C10金刚烷或C14金刚烷、卤代苯化合物(如溴苯)和第二种催化剂组分(如叔丁基溴)的量控制。优选步骤(A)的反应混合物中C10金刚烷或C14金刚烷∶卤代苯化合物∶第二种催化剂组分的摩尔比为1∶(5-15)∶(2-10),更优选1∶(8-12)∶(4-8)。Surprisingly, in addition to tetraphenyl compound monomers such as 1,3,5,7-tetrakis(3'/4'-bromophenyl) C 10 adamantane, in the mixture obtained after step (A) also Found its oligomers or polymers. The amount ratio of the C 10 adamantane monomer of formula III to the C 10 adamantane oligomer or polymer of formula IV or the C 14 adamantane monomer of formula V to the C 14 adamantane oligomerization of formula VI was totally unexpected The molar ratio of the compound or polymer can be controlled by the amount of C 10 adamantane or C 14 adamantane, halobenzene compound (such as bromobenzene) and second catalyst component (such as tert-butyl bromide) used. Preferably, in the reaction mixture of step (A), C 10 adamantane or C 14 adamantane: halogenated benzene compound: the molar ratio of the second catalyst component is 1: (5-15): (2-10), more preferably 1:(8-12):(4-8).

在具有式XA、XB、XC、XD、XI、XIIA、XIIB、XIIC、XIID、XIII、XIV、XV、XVI、XVII、XVIII、XIX、XX、XXI、XXII、XXIII、XXIV和XXV的化合物中,卤取代基Y1的位置不受限定。优选混合物包括间位-和对位-异构体,这样与所有均为对位-异构体不同,而可有利地带来提高的溶解性和优良的膜特性。在步骤(A)的反应混合物中,除单体和低聚物或聚合物外,也会有起始组分和副产物如非全苯代的C10金刚烷。In compounds of formula XA, XB, XC, XD, XI, XIIA, XIIB, XIIC, XIID, XIII, XIV, XV, XVI, XVII, XVIII, XIX, XX, XXI, XXII, XXIII, XXIV and XXV, The position of the halogen substituent Y 1 is not limited. Preferred mixtures include meta- and para-isomers, as opposed to all para-isomers, which advantageously result in enhanced solubility and good film properties. In the reaction mixture of step (A), besides monomers and oligomers or polymers, there will also be starting components and by-products such as non-perphenylated C 10 adamantanes.

步骤(A)产生的混合物可任选通过本领域技术人员已知的方法进行后处理。例如,为得到具高比例的式III、IV、V和VI化合物而可用于进一步反应的产物,可能必须自混合物中除去没有反应的卤代苯化合物,如溴苯。与卤代苯化合物如溴苯可混溶、并适用于式III、IV、V和VI的化合物的沉淀的任何溶剂或溶剂混合物可用于这些产物的分离。优选通过如滴加将步骤(A)产生的混合物加入非极性溶剂或溶剂混合物中,优选使用具有7-20个碳原子的脂族烃或其混合物,尤其是至少一种选自以下的组分:庚烷馏分(沸程:93-99℃)、辛烷馏分(沸程:98-110℃)和目前可购自Honeywell International Inc.、商品名为Spezial Benzin 80-110℃(沸程为80-110℃的石油醚)的烷烃混合物。最优选Spezial Benzin 80-110℃(沸程为80-110℃的石油醚)。优选有机混合物与非极性溶剂的重量比例约为1∶2至1∶20,更优选约1∶5至1∶13,最优选约1∶7至1∶11。或者,在步骤(A)后所产生的混合物的后处理中可使用极性溶剂或溶剂混合物(如甲醇或乙醇),但较不优选使用,因为沉淀出的产物混合物为橡胶态组合物。The mixture resulting from step (A) can optionally be worked up by methods known to the person skilled in the art. For example, it may be necessary to remove unreacted halobenzene compounds, such as bromobenzene, from the mixture in order to obtain products having a high proportion of compounds of formulas III, IV, V and VI which are available for further reaction. Any solvent or solvent mixture which is miscible with halobenzene compounds such as bromobenzene and which is suitable for the precipitation of compounds of formula III, IV, V and VI can be used for the isolation of these products. The mixture resulting from step (A) is preferably added, eg dropwise, to a non-polar solvent or solvent mixture, preferably using an aliphatic hydrocarbon having 7 to 20 carbon atoms or a mixture thereof, especially at least one selected from the group Sub: heptane fraction (boiling range: 93-99°C), octane fraction (boiling range: 98-110°C) and currently available from Honeywell International Inc., trade name Spezial Benzin 80-110°C (boiling range: 80-110°C petroleum ether) alkane mixture. The most preferred is Spezial Benzin 80-110°C (petroleum ether with a boiling range of 80-110°C). Preferably the weight ratio of organic mixture to non-polar solvent is about 1:2 to 1:20, more preferably about 1:5 to 1:13, most preferably about 1:7 to 1:11. Alternatively, polar solvents or solvent mixtures such as methanol or ethanol can be used in the workup of the mixture produced after step (A), but are less preferred since the precipitated product mixture is a rubbery composition.

我们发现,如果上述步骤(A)的混合物在某些溶剂中发生沉淀,在步骤(A)中产生的单体与反应混合物中的二聚体、三聚体和低聚物的最高比例会发生显著的变化。该发现将很好地促使本领域技术人员调整工艺条件以获得单体与二聚体、三聚体和低聚物的目标比例。为降低该比例,优选使用单体和低聚物或聚合物在其中具有不同的溶解性的溶剂。We have found that the highest ratio of monomers produced in step (A) to dimers, trimers and oligomers in the reaction mixture occurs if the mixture of step (A) above is precipitated in certain solvents Significant change. This finding will well prompt one skilled in the art to adjust the process conditions to obtain the target ratio of monomers to dimers, trimers and oligomers. To reduce this ratio, preference is given to using solvents in which monomers and oligomers or polymers have different solubilities.

优选实现这种单体与二聚体和三聚体的比例变化的溶剂包括Spezial Benzin 80-110℃(沸程为80-110℃的石油醚)、ligroine(沸程为90-110℃)和庚烷(沸点98℃)。更优选溶剂是Spezial Benzin。特别是,为实现单体∶(二聚体+三聚体+低聚物)约为3∶1至约为1∶1的变化,将步骤(A)的混合物自Spezial Benzin沉淀出来,或为获得单体∶(二聚体+三聚体+低聚物)约为3∶1至约为1.7-2.0∶1.0的变化,将步骤(A)的反应混合物自ligroine和庚烷中沉淀出来。我们知道沉淀时峰分布的这些明显变化可由沉淀滤液中的单体损失解释:2/3损失在SpezialBenzin中和≥1/3损失在ligroine和庚烷中,这对应于50和25-33%的单体收率损失。为使单体∶(二聚体+三聚体+低聚物)为3∶1的比例保持不变,将步骤(A)的反应混合物在甲醇中沉淀出来,这样没有观察到发生收率损失。这通过滤液中的收率损失测定和滤液的GPC分析进一步证实。Preferred solvents to achieve this change in the ratio of monomers to dimers and trimers include Spezial Benzin 80-110°C (petroleum ether with a boiling range of 80-110°C), ligroine (boiling range of 90-110°C) and Heptane (boiling point 98°C). A more preferred solvent is Spezial Benzin. In particular, to achieve a monomer:(dimer+trimer+oligomer) variation of about 3:1 to about 1:1, the mixture of step (A) is precipitated from Spezial Benzin, or as To obtain a monomer:(dimer+trimer+oligomer) variation of about 3:1 to about 1.7-2.0:1.0, the reaction mixture of step (A) was precipitated from ligroine and heptane. We know that these apparent changes in peak distribution upon precipitation can be explained by monomer loss in the precipitation filtrate: 2/3 loss in SpezialBenzin and ≥1/3 loss in ligroine and heptane, which correspond to 50 and 25-33% of Monomer yield loss. To keep the monomer:(dimer+trimer+oligomer) ratio of 3:1 constant, the reaction mixture from step (A) was precipitated in methanol and no yield loss was observed . This was further confirmed by yield loss measurements in the filtrate and GPC analysis of the filtrate.

同Ortiz描述的合成方法一样,根据本发明方法中步骤(A)的优选方面完成的Friedel-Crafts反应直接以与卤代苯化合物偶合的C10金刚烷为原料。与Reichert等人的例如1,3,5,7-四(3′/4′-溴苯)C10金刚烷的现有的合成方法相比,本发明方法特别有优势,这是因为本发明方法不需要首先制备四溴代C10金刚烷,从而简化了反应步骤。同时形成了较少不符合需要的苯。Like the synthetic method described by Ortiz, the Friedel-Crafts reaction performed according to the preferred aspect of step (A) in the method of the present invention starts directly with a C10 adamantane coupled with a halobenzene compound. The method of the present invention is particularly advantageous compared to the prior synthesis of e.g. The method does not require the preparation of tetrabromo-C 10 adamantane first, thus simplifying the reaction steps. At the same time less undesirable benzene is formed.

本领域技术人员知道,除通过使C10金刚烷直接与卤代苯化合物(如在Friedel-Crafts反应的帮助下)反应外,也可通过多步合成向上式III、IV、V和VI化合物引入卤基Y1,例如通过使C10金刚烷与苯基化合物(即不合卤基Y1)偶合,然后如通过与W(Y1)2(如Br2)的加成反应引入Y1基。但是这种方法不优选。Those skilled in the art know that, in addition to reacting C10 adamantanes directly with halobenzene compounds (e.g. with the help of Friedel-Crafts reactions), it is also possible to introduce compounds of formulas III, IV, V and VI via a multistep synthesis. The halo group Y 1 is, for example, coupled with a C 10 adamantane and a phenyl compound (ie no halo group Y 1 ), and then introduced into the Y 1 group such as by addition reaction with W(Y 1 ) 2 (such as Br 2 ). But this method is not preferred.

在优选方法的步骤(B)中,步骤(A)后得到的混合物(任选经过后处理)与式R1C≡CH(R1的定义同前)的末端炔基反应。In step (B) of the preferred process, the mixture obtained after step (A) (optionally after work-up) is reacted with a terminal alkynyl group of the formula R 1 C≡CH (R 1 is as defined above).

式R1C≡CH中,R1与先前描述的式XA、XB、XC、XD和XI的C10金刚烷产物和式XIIA,XIIB,XIIC或XIID和XIII的C14金刚烷产物中的R1相同。相应地,最优选使用乙炔基苯(苯乙炔)用作步骤(B)的反应的末端炔基。In the formula R 1 C≡CH, R 1 is combined with R in the previously described C 10 adamantane products of formulas XA, XB, XC, XD and XI and the C 14 adamantane products of formulas XIIA, XIIB, XIIC or XIID and XIII 1 is the same. Accordingly, it is most preferred to use ethynylbenzene (phenylacetylene) as the terminal alkynyl group for the reaction of step (B).

在步骤(B)中,为将末端炔基与位于C10金刚烷系统的卤代苯基偶合,适合此目的的如下所述的所有常规方法均可使用:Diederich,F.,和Stang,P.J.,(编辑)“Metal-Catalyzed Cross-CouplingReactions”,Wiley-VCH 1998和March.,J.,“Advanced OrganicChemistry”,第四版,John Wiley & Sons 1992年,717/718页。In step (B), to couple the terminal alkynyl group with the halophenyl group in the C10 adamantane system, all conventional methods suitable for this purpose as described below can be used: Diederich, F., and Stang, PJ , (ed.) "Metal-Catalyzed Cross-Coupling Reactions", Wiley-VCH 1998 and March., J., "Advanced Organic Chemistry", Fourth Edition, John Wiley & Sons 1992, pp. 717/718.

当苯基上的Y与上式XI或上式XIII中的两个笼形结构桥头碳连接时,Y可与苯乙炔反应生成末端炔基。When Y on the phenyl group is connected to two bridgehead carbons in the above formula XI or the above formula XIII, Y can react with phenylacetylene to form a terminal alkynyl group.

在本发明的优选方面,步骤(A)后得到的混合物(任选经过后处理)与末端炔的反应在用于所谓的Sonogashira偶合(参见Sonogashira;Tohda;Hagihara;Tetrahedron Lett.1975年,4467页)的催化剂系统存在下完成。更优选使用的催化剂系统在任何情况下均包括至少一种具有式[Ar3P]2PdX2(其中Ar=芳基和X=卤素)的钯-三芳基膦络合物、卤化铜(如CuI)、碱(如三烷基胺)、三芳基膦和助溶剂。根据本发明,这种优选的催化剂系统可由均等的所述组分组成。优选助溶剂包括至少一种选自甲苯、二甲苯、氯苯、N,N-二甲基甲酰胺和1-甲基-2-吡咯烷酮(N-甲基-吡咯烷酮(NMP))的组分。最优选包括以下组分的催化剂系统:二氯化双-(三苯基膦)合钯(II)(即[Ph3P]2PdCl2)、三苯基膦(即[Ph3P])、碘化亚酮(I)、三乙胺和甲苯(作为助溶剂)。In a preferred aspect of the invention, the reaction of the mixture obtained after step (A) (optionally after work-up) with terminal alkynes is used in the so-called Sonogashira coupling (see Sonogashira; Tohda; Hagihara; Tetrahedron Lett. 1975, p. 4467 ) in the presence of a catalyst system. More preferably used catalyst systems comprise in any case at least one palladium-triarylphosphine complex of formula [Ar 3 P] 2 PdX 2 (wherein Ar=aryl and X=halogen), copper halides such as CuI), base (such as trialkylamine), triarylphosphine and cosolvent. According to the invention, such preferred catalyst systems may consist of equal parts of the stated components. Preferably, the co-solvent includes at least one component selected from the group consisting of toluene, xylene, chlorobenzene, N,N-dimethylformamide and 1-methyl-2-pyrrolidone (N-methyl-pyrrolidone (NMP)). Most preferred are catalyst systems comprising the following components: bis-(triphenylphosphine)palladium(II) dichloride (ie [Ph 3 P] 2 PdCl 2 ), triphenylphosphine (ie [Ph 3 P]) , ketone iodide (I), triethylamine and toluene (as co-solvent).

步骤(A)(和任选的后处理)得到的混合物与末端炔的反应的优选方法为:首先使混合物与碱(如三乙胺)和助溶剂(如甲苯)混合并将混合物在室温下搅拌若干分钟;然后加入钯-三苯基膦络合物(如Pd(PPh3)2Cl2)、三苯基膦(PPh3)和卤化铜(如碘化亚酮(I));将该混合物在50℃-90℃(更优选80℃-85℃)下加热;接着在指定温度范围内、在1-20小时(更优选3小时)内加入末端炔;加入结束后,将混合物在75℃-85℃(更优选80℃)下加热至少5-20小时(更优选12小时);然后将溶剂加入至反应溶液中并减压蒸馏;优选过滤后,将反应溶液冷却至20℃-30℃(更优选25℃);最后,将步骤(B)的反应混合物通过本领域技术人员熟知的常规方法处理,具体是除去微量金属(如钯)。A preferred procedure for the reaction of the mixture obtained in step (A) (and optional workup) with a terminal alkyne is to first mix the mixture with a base (e.g. triethylamine) and a cosolvent (e.g. toluene) and bring the mixture to room temperature Stir for several minutes; then add palladium-triphenylphosphine complex (such as Pd(PPh 3 ) 2 Cl 2 ), triphenylphosphine (PPh 3 ) and copper halide (such as ketone iodide (I)); The mixture is heated at 50°C-90°C (more preferably 80°C-85°C); then the terminal alkyne is added within the specified temperature range within 1-20 hours (more preferably 3 hours); after the addition is complete, the mixture is Heating at 75°C-85°C (more preferably 80°C) for at least 5-20 hours (more preferably 12 hours); then adding the solvent to the reaction solution and distilling under reduced pressure; preferably after filtering, the reaction solution is cooled to 20°C- 30° C. (more preferably 25° C.); finally, the reaction mixture of step (B) is treated by conventional methods well known to those skilled in the art, specifically to remove trace metals (such as palladium).

如果步骤(B)混合物在某些溶剂中发生沉淀,则上述步骤(B)产生的反应混合物中的单体与其二聚体和三聚体和低聚物的最高比例将发生变化。If precipitation of the step (B) mixture occurs in certain solvents, the maximum ratio of monomers to their dimers and trimers and oligomers in the reaction mixture produced in step (B) above will change.

令人惊讶的是,发现在直接从C10金刚烷开始的反应步骤中,可通过使用C10金刚烷、卤代苯化合物和第二种催化剂组分(如叔丁基溴)的比率来控制步骤(A)反应产物中的低聚物含量或聚合物含量。同样,通过这样使用比率可成功地控制步骤(A)的反应混合物中苯的含量。由于苯具有毒性,这在工业化规模合成中将非常重要。低聚物或聚合物的含量使得它们的二次化学性能(secondary chemistry)与单体(如1,3,5,7-四-(3′/4′-溴苯基)C10金刚烷)的相同,即所述低聚物和聚合物与单体一样容易与步骤(B)的末端炔反应。Surprisingly, it was found that in the reaction step starting directly from C10 adamantane, the ratio of C10 adamantane, halobenzene compound and a second catalyst component such as tert-butyl bromide can be controlled Oligomer content or polymer content in the reaction product of step (A). Likewise, the benzene content of the reaction mixture of step (A) can be successfully controlled by such use of ratios. Due to the toxicity of benzene, this will be very important in an industrial scale synthesis. The content of oligomers or polymers is such that their secondary chemistry (secondary chemistry) is similar to that of monomers (such as 1,3,5,7-tetra-(3'/4'-bromophenyl) C 10 adamantane) , ie the oligomers and polymers react with the terminal alkynes of step (B) as readily as the monomers.

在一个实施方案中,将所述热固性组分与成孔剂混合。热固性组分的用量为约50至90%重量,而成孔剂的用量为约10至50%重量。热固性组分和成孔剂可以或可不相互反应。优选随后加入增粘剂。In one embodiment, the thermosetting component is mixed with a porogen. The thermosetting component is used in an amount of about 50 to 90% by weight and the porogen is used in an amount of about 10 to 50% by weight. The thermosetting component and porogen may or may not react with each other. The tackifier is preferably added subsequently.

优选在另一实施方案中,本发明包括一种组合物,所述组合物包括成孔剂和含至少两种不同的式XXVII的异构体的混合物,Preferably in another embodiment, the present invention comprises a composition comprising a porogen and a mixture comprising at least two different isomers of formula XXVII,

Figure A0380593800761
Figure A0380593800761

其中Q的定义同前。优选混合物包括至少两种不同的式XXVIII、式XXIX、式XXX的异构体:Wherein the definition of Q is the same as before. Preferred mixtures include at least two different isomers of formula XXVIII, formula XXIX, formula XXX:

式XXVIIFormula XXVII

Figure A0380593800771
Figure A0380593800771

式XXIXFormula XXIX

Figure A0380593800772
Figure A0380593800772

式XXXFormula XXX

其中每个Y相同或不同并选自氢、烷基、芳基、取代芳基或卤素和每个R1相同或不同并选自氢、卤素、烷基、芳基、取代芳基、杂芳基、芳醚、链烯基、炔基、烷氧基、羟烷基、羟芳基、羟链烯基、羟炔基、羟基或羧基。wherein each Y is the same or different and is selected from hydrogen, alkyl, aryl, substituted aryl, or halogen and each R is the same or different and is selected from hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy or carboxyl.

优选混合物包括至少两种不同的式XXXI的异构体Preferred mixtures include at least two different isomers of formula XXXI

Figure A0380593800781
Figure A0380593800781

其中,每个Q的定义同前。优选混合物包括至少两种不同的式XXXII、式XXXIII、式XXXIV的异构体,Wherein, the definition of each Q is the same as above. Preferably the mixture comprises at least two different isomers of formula XXXII, formula XXXIII, formula XXXIV,

式XXXIIFormula XXXII

Figure A0380593800782
Figure A0380593800782

式XXXIIIFormula XXXIII

式XXXIVFormula XXXIV

其中Y和R1的定义同前。Wherein Y and R 1 are as defined above.

增粘剂:Tackifier:

本文中使用的术语“增粘剂”是指加至热固性组分中,与单独热固性组分相比,能提高其与基体的粘合力的任何组分。As used herein, the term "tackifier" refers to any component added to a thermosetting component that increases its adhesion to a substrate as compared to the thermosetting component alone.

本文中使用的术语“至少具有双官能团的化合物”是指至少具有两个官能团并能如下方式相互作用、反应或成键的任何化合物。官能团可以多种方式反应,包括进行加成反应、亲核和亲电取代或消除、自由基反应等。其它反应还可包括非共价键形成,如形成范德华力、静电键、离子键和氢键。As used herein, the term "compound having at least two functional groups" refers to any compound having at least two functional groups and capable of interacting, reacting, or bonding as follows. Functional groups can react in a variety of ways, including undergoing addition reactions, nucleophilic and electrophilic substitution or elimination, free radical reactions, and more. Other reactions may also include non-covalent bond formation, such as the formation of van der Waals forces, electrostatic bonds, ionic bonds, and hydrogen bonds.

在一个实施方案中,将所述增粘剂和成孔剂混合。基于包含增粘剂、成孔剂和热固性化合物的组合物计算,增粘剂的用量为约3至18%重量,成孔剂的用量为约10至50%重量。热固性组分和成孔剂可以或可不相互反应。优选随后加入热固性组分,加入量为约32至87%重量。In one embodiment, the tackifier and porogen are mixed. The tackifier is used in an amount of about 3 to 18% by weight and the porogen is used in an amount of about 10 to 50% by weight, based on the composition comprising the tackifier, porogen and thermosetting compound. The thermosetting component and porogen may or may not react with each other. Preferably the thermosetting component is subsequently added in an amount of about 32 to 87% by weight.

我们发现增粘剂有利地提高了成孔剂和热固性组分的相容性。虽然不希望受理论限制,但我们相信增粘剂起乳化剂的作用,因而形成了均相体系。We have found that tackifiers advantageously increase the compatibility of the porogen and thermoset components. While not wishing to be bound by theory, it is believed that the tackifier acts as an emulsifier, thus forming a homogeneous system.

增粘剂在我们共同转让的、于2002年1月15日提交的待审批专利申请60/350187和于2002年5月30日提交的10/160773中公开,该申请的内容通过引用其整体而结合到本文中。Tackifiers are disclosed in our commonly assigned pending patent applications 60/350187, filed January 15, 2002, and 10/160773, filed May 30, 2002, the contents of which are incorporated by reference in their entirety incorporated into this article.

在增粘剂中,优选第一官能团和第二官能团中的至少一种选自含硅基团、含氮基团、含碳氧键基团、羟基和含碳碳双键基团。优选含硅基团选自Si-H、Si-O和Si-N;含氮基团选自如C-NH2或其他仲胺、叔胺、亚胺、酰胺和酰亚胺;含碳氧健基团选自=CO(羰基)如酮和醛、酯、-COOH、1-5个碳原子的烷氧基、醚、缩水甘油醚和环氧化物;羟基,如酚羟基;含碳碳双键基团选自烯丙基和乙烯基。对于半导体应用,更优选的官能团包括含硅基团、含碳氧键基团、羟基和乙烯基。In the tackifier, preferably at least one of the first functional group and the second functional group is selected from silicon-containing groups, nitrogen-containing groups, carbon-oxygen bond-containing groups, hydroxyl groups, and carbon-carbon double bond-containing groups. Preferred silicon-containing groups are selected from Si-H, Si-O and Si-N; Nitrogen-containing groups are selected from such as C- NH Or other secondary amines, tertiary amines, imines, amides and imides; Groups selected from =CO (carbonyl) such as ketones and aldehydes, esters, -COOH, alkoxyl groups of 1 to 5 carbon atoms, ethers, glycidyl ethers and epoxides; hydroxyl groups such as phenolic hydroxyl groups; carbon-carbon bis The bonding group is selected from allyl and vinyl. For semiconductor applications, more preferred functional groups include silicon-containing groups, carbon-oxygen bond-containing groups, hydroxyl groups, and vinyl groups.

优选的具有含硅基团的增粘剂的实例为式XXXVI的硅烷:(R2)k(R3)lSi(R4)m(R5)n,其中R2、R3、R4和R5各自独立代表氢、羟基、不饱和或饱和烷基、取代或未取代烷基,其中取代基为氨基或环氧化物、饱和或不饱和烷氧基、不饱和或饱和羧基或芳基;R2、R3、R4和R5中至少两个表示氢、羟基、饱和或不饱和烷氧基、不饱和烷基或不饱和羧基;和k+l+m+n≤4。实例包括乙烯基硅烷如H2C=CHSi(CH3)2H和H2C=CHSi(R6)3,其中R6为CH3O、C2H5O、AcO、H2C=CH或H2C=C(CH3)O-或乙烯基苯甲基硅烷;式H2C=CHCH2-Si(OC2H5)3和H2C=CHCH2-Si(H)(OCH3)2的烯丙基硅烷;环氧丙氧丙基硅烷,如(3-环氧丙氧丙基)甲基二乙氧基硅烷和(3-环氧丙氧丙基)三甲氧基硅烷;式H2C=(CH3)COO(CH2)3-Si(OR7)3的甲基丙烯酰氧基丙基硅烷,其中R7为烷基,优选甲基或乙基;氨基丙基硅烷衍生物,包括H2N(CH2)3Si(OCH2CH3)3、H2N(CH2)3Si(OH)3或H2N(CH2)3OC(CH3)2CH=CHSi(OCH3)3。上述硅烷可购自Gelest。Examples of preferred adhesion promoters with silicon-containing groups are silanes of formula XXXVI: (R 2 ) k (R 3 ) l Si(R 4 ) m (R 5 ) n , where R 2 , R 3 , R 4 and R independently represent hydrogen, hydroxyl, unsaturated or saturated alkyl, substituted or unsubstituted alkyl, wherein the substituent is amino or epoxide, saturated or unsaturated alkoxy, unsaturated or saturated carboxy or aryl ; at least two of R 2 , R 3 , R 4 and R 5 represent hydrogen, hydroxyl, saturated or unsaturated alkoxy, unsaturated alkyl or unsaturated carboxy; and k+l+m+n≦4. Examples include vinylsilanes such as H 2 C=CHSi(CH 3 ) 2 H and H 2 C=CHSi(R 6 ) 3 where R 6 is CH 3 O, C 2 H 5 O, AcO, H 2 C=CH or H 2 C=C(CH 3 )O- or vinylbenzylsilane; formula H 2 C=CHCH 2 -Si(OC 2 H 5 ) 3 and H 2 C=CHCH 2 -Si(H)(OCH 3 ) Allylsilanes of 2 ; glycidoxypropylsilanes such as (3-glycidoxypropyl)methyldiethoxysilane and (3-glycidoxypropyl)trimethoxysilane ; Methacryloxypropylsilane of the formula H 2 C=(CH 3 )COO(CH 2 ) 3 -Si(OR 7 ) 3 , wherein R 7 is an alkyl group, preferably methyl or ethyl; aminopropyl Silane derivatives including H 2 N(CH 2 ) 3 Si(OCH 2 CH 3 ) 3 , H 2 N(CH 2 ) 3 Si(OH) 3 or H 2 N(CH 2 ) 3 OC(CH 3 ) 2 CH=CHSi(OCH 3 ) 3 . The aforementioned silanes are commercially available from Gelest.

优选的具有含碳氧键基团的增粘剂的实例为缩水甘油醚,包括但不限于购自TriQuest的1,1,1-三-(羟苯基)乙烷三-缩水甘油醚。Examples of preferred tackifiers having carbon-oxygen bond-containing groups are glycidyl ethers, including but not limited to 1,1,1-tris-(hydroxyphenyl)ethane tri-glycidyl ether available from TriQuest.

优选具有含碳氧键基团的增粘剂实例为具有至少一个羧基的不饱和羧酸酯。实例包括三官能的甲基丙烯酸酯、三官能的丙烯酸酯、三羟甲基丙烷三丙烯酸酯、二季戊四醇五丙烯酸酯和甲基丙烯酸缩水甘油酯。上述产品均可购自Sartomer。Examples of tackifiers preferably having a carbon-oxygen bond-containing group are unsaturated carboxylic acid esters having at least one carboxyl group. Examples include trifunctional methacrylates, trifunctional acrylates, trimethylolpropane triacrylate, dipentaerythritol pentaacrylate, and glycidyl methacrylate. The above products are all commercially available from Sartomer.

优选的具有乙烯基的增粘剂的实例为乙烯基环状吡啶低聚物或聚合物,其中所述环状基团为吡啶、芳族化合物或杂芳族化合物。有效的实例包括但不限于可购自Reilly的2-乙烯基吡啶和4-乙烯基吡啶;乙烯基芳族化合物;和乙烯基杂芳族化合物,包括但不限于乙烯基喹啉、乙烯基咔唑、乙烯基咪唑和乙烯基噁唑。Examples of preferred tackifiers having vinyl groups are vinyl cyclic pyridine oligomers or polymers, wherein the cyclic group is pyridine, an aromatic compound or a heteroaromatic compound. Effective examples include, but are not limited to, 2-vinylpyridine and 4-vinylpyridine available from Reilly; vinylaromatics; and vinylheteroaromatics, including but not limited to vinylquinoline, vinylcarba Azole, Vinylimidazole and Vinyloxazole.

优选的含硅基团的增粘剂的实例为于1999年12月23日提交的、我们共同转让的待审批美国专利申请系列09/471299中公开的聚碳硅烷,该专利申请的内容通过引用其整体而结合到本文中。聚碳硅烷如式XXXVIX所示:Examples of preferred silicon-group-containing adhesion promoters are the polycarbosilanes disclosed in our commonly assigned copending U.S. Patent Application Serial No. 09/471,299, filed December 23, 1999, the contents of which are incorporated by reference It is incorporated herein in its entirety. Polycarbosilane is shown in formula XXXVIX:

Figure A0380593800811
Figure A0380593800811

其中R8、R14和R17各自表示取代或未取代的亚烷基、亚环烷基、1,2-亚乙烯基、亚烯丙基或亚芳基;R9、R10、R11、R12、R15和R16各自独立表示氢或包括烷基、亚烷基、乙烯基、环烷基、烯丙基或芳基的有机基团,这些基团可为支链或直链;R13表示有机硅、甲硅烷基、甲硅烷氧基或有机基团;和p、q、r和s满足条件[4≤p+q+r+s≤100,000],q、r和s可全部或分别为0。有机基团最多可包括18个碳原子,但一般包括约1-10个碳原子。可用的烷基包括-CH2-和-(CH2)t-,其中t>1。wherein R 8 , R 14 and R 17 each represent a substituted or unsubstituted alkylene, cycloalkylene, 1,2-vinylene, allylylene or arylene; R 9 , R 10 , R 11 , R 12 , R 15 and R 16 each independently represent hydrogen or organic groups including alkyl, alkylene, vinyl, cycloalkyl, allyl or aryl, and these groups can be branched or straight chain ; R 13 represents organosilicon, silyl, siloxy or organic group; and p, q, r and s satisfy the condition [4≤p+q+r+s≤100,000], q, r and s can be All or 0 respectively. Organic groups can contain up to 18 carbon atoms, but generally contain about 1-10 carbon atoms. Useful alkyl groups include -CH2- and -( CH2 ) t- , where t>1.

优选本发明的聚碳硅烷包括聚二氢碳硅烷,其中R8为取代或未取代的亚烷基或苯基,R9为氢原子并且在聚碳硅烷链上没有附属基团;也就是说,q、r和s全为0。另一优选的聚碳硅烷基团为其中式XXXVII的R9、R10、R11、R12、R15和R16基团为具有2-10个碳原子的取代或未取代链烯基的那些基团。链烯基可以为乙烯基、丙烯基、烯丙基、丁烯基或其他最多具有10个碳原子的不饱和的有机骨架基团。链烯基在性质上可以是二烯基并包括作为其他烷基或不饱和有机聚合物骨架上的侧链或取代基的不饱和链烯基。这些优选的聚碳硅烷的实例包括二氢或链烯基取代的聚碳硅烷如聚二氢碳硅烷、聚烯丙基氢碳硅烷以及聚二氢碳硅烷和聚烯丙基氢碳硅烷的无规共聚物。Preferred polycarbosilanes of the present invention include polydihydrocarbosilanes, wherein R is a substituted or unsubstituted alkylene or phenyl group, R is a hydrogen atom and there is no subsidiary group on the polycarbosilane chain; that is , q, r and s are all 0. Another preferred polycarbosilane group is one in which the R 9 , R 10 , R 11 , R 12 , R 15 and R 16 groups of formula XXXVII are substituted or unsubstituted alkenyl groups having 2-10 carbon atoms those groups. The alkenyl group may be vinyl, propenyl, allyl, butenyl or other unsaturated organic backbone groups having up to 10 carbon atoms. Alkenyl groups may be alkenyl in nature and include unsaturated alkenyl groups as side chains or substituents on other alkyl or unsaturated organic polymer backbones. Examples of these preferred polycarbosilanes include dihydro- or alkenyl-substituted polycarbosilanes such as polydihydrocarbosilane, polyallylhydrocarbosilane, and combinations of polydihydrocarbosilane and polyallylhydrocarbosilane. standard copolymer.

在更优选的聚碳硅烷中,式XXXVII的R9基团为氢原子、R8为亚甲基和附属基团q、r和s为0。其他优选的本发明的聚碳硅烷化合物为式XXXVII的聚碳硅烷,其中R9和R15为氢,R8和R17为亚甲基,R16为链烯基和附属基团q和r为0。聚碳硅烷可通过现有技术已知的方法制备或由聚碳硅烷组合物生产商提供。最优选的聚碳硅烷中,式XXXVII的R9基团为氢原子;R8为-CH2-;q、r和s为0和p为5-25。这些最优选的聚碳硅烷可得自Starfire Systems,Inc.。这些最优选的聚碳硅烷的具体实例如下表:In a more preferred polycarbosilane, the R 9 group of formula XXXVII is a hydrogen atom, R 8 is a methylene group and the subsidiary groups q, r and s are 0. Other preferred polycarbosilane compounds of the present invention are polycarbosilanes of formula XXXVII, wherein R 9 and R 15 are hydrogen, R 8 and R 17 are methylene groups, R 16 are alkenyl and subsidiary groups q and r is 0. The polycarbosilanes can be prepared by methods known in the art or supplied by polycarbosilane composition manufacturers. In the most preferred polycarbosilane, the R 9 group of the formula XXXVII is a hydrogen atom; R 8 is -CH 2 -; q, r and s are 0 and p is 5-25. These most preferred polycarbosilanes are available from Starfire Systems, Inc. The specific examples of these most preferred polycarbosilanes are as follows:

 聚碳硅烷 polycarbosilane   重均分子量(Mw) Weight average molecular weight (Mw)     多分散性 polydispersity     峰位分子量(Mp)  Peak Molecular Weight (Mp)  1 1   400-1,400 400-1,400     2-2.5 2-2.5     330-500 330-500  2 2   330 330     1.14 1.14     320 320  3(10%烯丙基) 3 (10% allyl)   10,000-14,000 10,000-14,000     10.4-16 10.4-16     1160 1160  4(75%烯丙基) 4 (75% allyl)   2,400 2,400     3.7 3.7     410 410

由式XXXVII可见,当r>0时,用于本发明的聚碳硅烷可包括甲硅烷氧基形式的氧化基团。因此,当r>0时,R13表示有机硅、甲硅烷基、甲硅烷氧基或有机基团。可以理解聚碳硅烷(r>0)的氧化形式作用非常有效并且很好的落于本发明的范围内。同样明显的是,r可独立于p、q和s而为0,条件仅为在式XXXVII的聚碳硅烷中的p、q、r和s基团必须满足[4<p+q+r+s<100,000],且q和r可同时或分别为0。As can be seen from Formula XXXVII, when r > 0, the polycarbosilanes used in the present invention may include oxidized groups in the form of siloxy groups. Thus, when r > 0, R 13 represents a silicone, silyl, siloxy or organic group. It is understood that the oxidized form of polycarbosilane (r > 0) works very effectively and falls well within the scope of the present invention. It is also evident that r can be 0 independently of p, q and s, provided only that the p, q, r and s groups in the polycarbosilane of formula XXXVII satisfy [4<p+q+r+ s<100,000], and q and r can be 0 simultaneously or respectively.

聚碳硅烷可通过使用常规聚合方法,由通过商业途径从许多生产商买到的原料制备。作为合成聚碳硅烷的一个实例,所用原料可如下制得:以常用的有机硅烷化合物或聚硅烷为原料,通过在惰性气氛中加热聚硅烷与聚硼硅氧烷的混合物从而产生相应的聚合物、通过在惰性气氛中加热聚硅烷与低分子量的碳硅烷混合物从而产生相应的聚合物或通过在惰性气氛中并在催化剂(如聚硼二苯基硅氧烷)存在下加热聚硅烷与低分子量的碳硅烷混合物从而产生相应的聚合物。聚碳硅烷也可通过在美国专利第5,153,295号中报道的Grignard反应进行合成,该专利内容通过引用而结合到本文中。Polycarbosilanes can be prepared from commercially available starting materials from a number of manufacturers using conventional polymerization methods. As an example of synthesizing polycarbosilane, the raw materials used can be obtained as follows: using commonly used organosilane compounds or polysilanes as raw materials, the corresponding polymer is produced by heating a mixture of polysilane and polyborosiloxane in an inert atmosphere , by heating polysilane and low molecular weight carbosilane mixture in an inert atmosphere to produce the corresponding polymer or by heating polysilane and low molecular weight carbosilane in an inert atmosphere in the presence of a catalyst (such as polyboron diphenylsiloxane) mixtures of carbosilanes to produce the corresponding polymers. Polycarbosilanes can also be synthesized by the Grignard reaction reported in US Patent No. 5,153,295, the contents of which are incorporated herein by reference.

优选的具有羟基的增粘剂的实例是酚醛树脂或式XXXVIII的低聚物:-[R18C6H2(OH)(R19)]u-,其中R18为取代或未取代亚烷基、亚环烷基、乙烯基、烯丙基或芳基;R19为烷基、亚烷基、1,2-亚乙烯基、亚环烷基、亚烯丙基或芳基;和u=3-100。有用的烷基实例包括-CH2-和d-(CH2)v-,其中v>1。一种特别有用的分子量为1500的酚醛树脂低聚物可购自Schenectady International Inc.。Examples of preferred tackifiers with hydroxyl groups are phenolic resins or oligomers of formula XXXVIII: -[R 18 C 6 H 2 (OH)(R 19 )] u -, where R 18 is a substituted or unsubstituted alkylene R is alkyl , alkylene, 1,2-vinylidene, cycloalkylene, allyl or aryl; and u = 3-100. Examples of useful alkyl groups include -CH2- and d-( CH2 )v-, where v>1. A particularly useful 1500 molecular weight phenolic resin oligomer is available from Schenectady International Inc.

优选本发明增粘剂的加入量较低,以本发明的热固性组合物(a)的重量计算,其有效量为约0.5%至20%,通常优选其加入量最多占所述组合物重量的约5.0%。Preferably, the tackifiers of the present invention are added at relatively low levels, with an effective amount of from about 0.5% to 20% by weight of the thermosetting composition (a) of the present invention, usually preferably in an amount of up to 20% by weight of the composition. About 5.0%.

通过将增粘剂与热固性组分(a)混合并将组合物置于热或高能环境中,产生的组合物具有优异的粘合特性,从而确保了整个聚合物与任何接触的涂层表面的亲和性。本发明增粘剂也减少了条痕、改善了粘性和膜均匀性。通过目测检验也证实的确减少了条痕。By mixing the tackifier with the thermosetting component (a) and exposing the composition to a heat or high energy environment, the resulting composition has excellent adhesive properties, ensuring affinity of the entire polymer to any coating surface in contact. and sex. The tackifiers of the present invention also reduce streaking and improve tack and film uniformity. Indeed, streak reduction was also confirmed by visual inspection.

本发明组合物也可包括另外的组分,如另外的增粘剂、防沫剂、去垢剂、阻燃剂、颜料、增塑剂、稳定剂和表面活性剂。The compositions of the present invention may also include additional components such as additional tackifiers, antifoam agents, detergents, flame retardants, pigments, plasticizers, stabilizers and surfactants.

成孔剂Pore former

在本文中使用的术语“孔”包括在材料中的空穴和小室以及任何其它具有在材料中被气体占据的空间的术语。合适的气体包括较纯的气体及其混合物。在孔中通常分布的是主要为氮气和氧气混合物的空气,但也可为纯的气体,如氮气、氦气、氩气、二氧化碳或一氧化碳。孔通常为球状,但也可为或还包括柱状、层状、盘状、具有其它形状的空穴或前述各种形状的组合,这些孔可开放或密闭。本文中使用的术语“成孔剂”是指可经辐射、热、化学或水份分解、降解、解聚,或其它方式分裂分解的材料,包括固体、液体或气体材料。已分解的成孔剂可从部分或完全交联的基体中除去或可经挥发或扩散排出,从而在随后基本上完全固化的基体中产生孔,并由此降低了基体的介电常数。成孔剂包括消耗性聚合物。可使用超临界材料如二氧化碳来除去成孔剂及分解成孔剂片断。对于热分解型成孔剂来说,优选分解温度低于与其混合的介电材料的玻璃化转变温度(Tg)但高于与其混合的介电材料固化温度的物质。因此,介电材料和成孔剂为不同材料。优选本发明的新成孔剂的降解或分解温度为约350℃或以上。优选已降解或分解的成孔剂在高于与其混合的材料的固化温度并低于所述材料的Tg的温度下挥发。优选所述已降解或分解的成孔剂在约280℃或以上的温度下挥发。As used herein, the term "pore" includes cavities and cells in a material and any other term having a space in a material that is occupied by a gas. Suitable gases include relatively pure gases and mixtures thereof. Typically distributed in the pores is air, primarily a mixture of nitrogen and oxygen, but may also be a pure gas such as nitrogen, helium, argon, carbon dioxide or carbon monoxide. The pores are generally spherical, but may also be or include columns, layers, discs, cavities with other shapes, or combinations of the aforementioned shapes, and these pores may be open or closed. As used herein, the term "porogen" refers to a material, including solid, liquid, or gaseous materials, that can be dissociated, degraded, depolymerized, or otherwise dissociated by radiation, heat, chemical, or moisture. The decomposed porogen can be removed from the partially or fully crosslinked matrix or can be expelled by volatilization or diffusion, thereby creating pores in the subsequently substantially fully cured matrix and thereby lowering the dielectric constant of the matrix. Pore formers include expendable polymers. Supercritical materials such as carbon dioxide can be used to remove porogens and break down porogen fragments. For the thermally decomposable porogen, a substance having a decomposition temperature lower than the glass transition temperature (Tg) of the dielectric material mixed therewith but higher than the solidification temperature of the dielectric material mixed therewith is preferred. Therefore, the dielectric material and the porogen are different materials. Preferably, the novel porogens of the present invention have a degradation or decomposition temperature of about 350°C or above. Preferably, the degraded or decomposed porogen volatilizes at a temperature above the solidification temperature of the material with which it is mixed and below the Tg of the material. Preferably, the degraded or decomposed porogen volatilizes at a temperature of about 280°C or above.

虽然国际专利公开WO 00/31183指出可将成孔剂加入至热固性苯并环丁烯、聚亚芳基或热固性全氟乙烯单体中以提高它们的多孔性,并由此降低树脂的介电常数,但该公开指出一种成孔剂在某种基体体系中能够很好地起作用并不意味着就能在另一种基体体系中起作用。Although International Patent Publication WO 00/31183 points out that porogens can be added to thermosetting benzocyclobutene, polyarylene or thermosetting perfluoroethylene monomers to increase their porosity and thereby reduce the dielectric constant of the resin , but the publication points out that a porogen that works well in a certain matrix system does not mean that it can work in another matrix system.

在本发明可使用包含至少两个稠合芳环的成孔剂,其中所述稠合芳环上各自具有至少一个烷基取代基且在相邻芳环上的至少两个烷基取代基间存在键。优选的成孔剂包括未官能化的聚苊均聚物、官能化的聚苊均聚物、下述聚苊共聚物、聚(2-乙烯基萘)和乙烯基蒽,以及它们的共混物。其它可用的成孔剂包括C10金刚烷、C14金刚烷、富勒烯和聚降冰片烯。这些成孔剂可彼此混合使用或与其它成孔剂材料(如聚己内酯、聚苯乙烯和聚酯)混合使用。有用的共混物包括未官能化的聚苊均聚物和聚己内酯。更优选的成孔剂为未官能化的聚苊均聚物、官能化的聚苊均聚物、聚苊共聚物和聚降冰片烯。有用的聚苊均聚物的重均分子量可优选为约300至20,000、更优选约300至10,000并最优选约1000至约7,000。聚苊均聚物可使用如下引发剂,由苊聚合得到:2,2′-偶氮二异丁腈(AIBN)、偶氮二甲酸二叔丁酯、偶氮二甲酸二异丙酯、偶氮二甲酸二乙酯、偶氮二甲酸二苄酯、偶氮二甲酸二苯酯、1,1′-偶氮二(环己烷甲腈)、过氧化苯甲酰(BpO)、叔丁基过氧化物以及三氟化硼·乙醚。所述聚苊均聚物的链末端可具有官能端基,如三键或双键;或用双键或三键醇如烯丙醇、丙炔醇、丁炔醇、丁烯醇或甲基丙烯酸羟乙酯猝灭的阳离子聚合得到。Porogens comprising at least two fused aromatic rings each having at least one alkyl substituent on the fused aromatic rings and between at least two alkyl substituents on adjacent aromatic rings can be used in the present invention. key exists. Preferred porogens include unfunctionalized polyacenaphthylene homopolymers, functionalized polyacenaphthylene homopolymers, polyacenaphthylene copolymers described below, poly(2-vinylnaphthalene) and vinylanthracene, and blends thereof thing. Other useful porogens include C 10 adamantane, C 14 adamantane, fullerene, and polynorbornene. These porogens can be used in admixture with each other or with other porogen materials such as polycaprolactone, polystyrene and polyester. Useful blends include unfunctionalized polyacenaphthylene homopolymer and polycaprolactone. More preferred porogens are unfunctionalized polyacenaphthylene homopolymers, functionalized polyacenaphthylene homopolymers, polyacenaphthylene copolymers, and polynorbornene. Useful polyacenaphthylene homopolymers may preferably have a weight average molecular weight of from about 300 to 20,000, more preferably from about 300 to 10,000 and most preferably from about 1000 to about 7,000. Polyacenaphthene homopolymer can be obtained by polymerization of acenaphthene using the following initiators: 2,2'-azobisisobutyronitrile (AIBN), di-tert-butyl azodicarboxylate, diisopropyl azodicarboxylate, diisopropyl azodicarboxylate, Diethyl azodicarboxylate, dibenzyl azodicarboxylate, diphenyl azodicarboxylate, 1,1'-azobis(cyclohexanecarbonitrile), benzoyl peroxide (BpO), tert-butyl base peroxides and boron trifluoride ether. The chain end of the polyacenaphthylene homopolymer can have functional end groups, such as triple bonds or double bonds; Obtained by cationic polymerization quenched with hydroxyethyl acrylate.

欧洲专利公开315453指出二氧化硅和某些金属氧化物可与碳反应,得到挥发性的低氧化物和气态碳氧化物,以形成孔。该专利公开还指出碳的来源包括任何合适的有机聚合物,包括聚苊。但是,该公开没有指出或建议可用于非金属材料或降低基体的介电常数的成孔剂。European Patent Publication 315453 teaches that silica and certain metal oxides can react with carbon to give volatile suboxides and gaseous carbon oxides to form pores. The patent publication also indicates that the source of carbon includes any suitable organic polymer, including polyacenaphthene. However, this publication does not teach or suggest porogens that can be used with non-metallic materials or lower the dielectric constant of the substrate.

有用的聚苊共聚物可为线形聚合物、星形聚合物或超支化(hyperbranched)聚合物。共聚单体可具有庞大的侧基,从而导致共聚物的构象类似于聚苊均聚物的构象;或可具有不庞大的侧基,从而导致共聚物的构象与聚苊均聚物的构象不相似。具有庞大侧基的共聚单体包括新戊酸乙烯基酯、丙烯酸叔丁酯、苯乙烯、α-甲基苯乙烯、叔丁基苯乙烯、2-乙烯基萘、5-乙烯基-2-降冰片烯、乙烯基环己烷、乙烯基环戊烷、9-乙烯基蒽、4-乙烯基联苯、四苯基丁二烯、1,2-二苯乙烯、叔丁基1,2-二苯乙烯和茚;优选新戊酸乙烯基酯。氢化聚碳硅烷可用作另一共聚单体或与蒽和至少一种前述共聚单体的共聚物组分。有用氢化聚碳硅烷的一实例具有10-75%烯丙基。具不庞大侧基的共聚单体包括乙酸乙烯酯;丙烯酸甲酯;甲基丙烯酸甲酯和乙烯基醚,优选乙酸乙烯酯。Useful polyacenaphthylene copolymers may be linear polymers, star polymers or hyperbranched polymers. The comonomer can have bulky side groups, resulting in a conformation of the copolymer similar to that of the polyacenaphthylene homopolymer, or can have non-bulky side groups, resulting in a conformation of the copolymer that is different from that of the polyacenaphthylene homopolymer. resemblance. Comonomers with bulky side groups include vinyl pivalate, tert-butyl acrylate, styrene, alpha-methylstyrene, tert-butylstyrene, 2-vinylnaphthalene, 5-vinyl-2- Norbornene, vinylcyclohexane, vinylcyclopentane, 9-vinylanthracene, 4-vinylbiphenyl, tetraphenylbutadiene, 1,2-stilbene, tert-butyl 1,2 - stilbene and indene; preferably vinyl pivalate. Hydrogenated polycarbosilanes can be used as a further comonomer or as a component of a copolymer with anthracene and at least one of the aforementioned comonomers. An example of a useful hydropolycarbosilane has 10-75% allyl groups. Comonomers with less bulky side groups include vinyl acetate; methyl acrylate; methyl methacrylate and vinyl ethers, preferably vinyl acetate.

优选所述共聚单体的用量占所述共聚物的约5至50%摩尔。这些共聚物可使用引发剂,通过自由基聚合制得。可用的引发剂优选包括2,2′-偶氮二异丁腈(AIBN)、偶氮二甲酸二叔丁酯、偶氮二甲酸二异丙酯、偶氮二甲酸二乙酯、偶氮二甲酸二苄酯、偶氮二甲酸二苯酯、1,1′-偶氮二(环己烷甲腈)、过氧化苯甲酰(BPO)、叔丁基过氧化物,更优选AIBN。共聚物还可使用如三氟化硼·乙醚为引发剂,通过阳离子聚合制得。优选共聚物的分子量为约500至15,000。Preferably, the comonomer is used in an amount of about 5 to 50 mole percent of the copolymer. These copolymers can be prepared by free-radical polymerization using initiators. Useful initiators preferably include 2,2'-azobisisobutyronitrile (AIBN), di-tert-butyl azodicarboxylate, diisopropyl azodicarboxylate, diethyl azodicarboxylate, azobis Dibenzyl formate, diphenyl azodicarboxylate, 1,1'-azobis(cyclohexanecarbonitrile), benzoyl peroxide (BPO), tert-butyl peroxide, more preferably AIBN. Copolymers can also be prepared by cationic polymerization using boron trifluoride ether as an initiator. Preferred copolymers have a molecular weight of from about 500 to 15,000.

苊和共聚单体形成的共聚物的热性能在下面表5中给出。在表5中,BA表示丙烯酸丁酯,VP表示新戊酸乙烯基酯,VA表示乙酸乙烯酯,AIBN表示2,2′-偶氮二异丁腈,BF3表示三氟化硼·乙醚,DBADC表示偶氮二甲酸二叔丁酯,W1表示从室温升高至250℃时的失重,W2表示在250℃下10分钟的失重,W3表示从250℃升高至400℃时的失重,W4表示在400℃下1小时的失重,W5表示总的失重。The thermal properties of the copolymers formed of acenaphthene and comonomer are given in Table 5 below. In Table 5, BA represents butyl acrylate, VP represents vinyl pivalate, VA represents vinyl acetate, AIBN represents 2,2'-azobisisobutyronitrile, BF 3 represents boron trifluoride·ethyl ether, DBADC means di-tert-butyl azodicarboxylate, W1 means the weight loss from room temperature to 250 °C, W2 means the weight loss at 250 °C for 10 minutes, W3 means the weight loss from 250 °C to 400 °C, W4 represents the weight loss at 400°C for 1 hour, and W5 represents the total weight loss.

                                                 表5   共聚单体   共聚物   引发剂   共聚单体%   引发剂% 溶剂     温度(℃)     时间(小时)   W1   W2   W3   W4   W5   Mn   Mw   BA   1   AIBN   11   1 二甲苯     70     24   14.63   1.02   33.14   30.44   79.23   4797   10552   BA   2   AIBN   20   1 二甲苯     70     24   1.47   0.98   37.92   35.55   75.92   4343   8103   BA   3   AIBN   30   1 二甲苯     70     24   13.41   1.6   36.48   27.55   79.04   4638   7826   BA   4   AIBN   50   1 二甲苯     70     24   10.01   2.96   46.92   26.51   86.40   3504   5489   BA   5   BF3   10   3 二甲苯     5     2   11.93   0.58   40.06   29.33   81.90   1502   2421   VP   6   AIBN   10   1 二甲苯     70     24   16.22   0.41   37.8   34.72   89.15   5442   10007   VP   7   AIBN   16   1 THF     60     12   5.32   0.66   46.55   29.59   82.12   1598   2422   VP   8   AIBN   25   1 二甲苯     70     24   4.15   0.37   24.98   47.4   76.90   2657   8621   VP   9   AIBN   30   1 二甲苯     70     24   14.7   0.69   33.27   39.54   88.20   5342   9303   VP   10   AIBN   40   1 二甲苯     70     24   6.34   0.26   33.69   39.38   76.67   4612   7782   VP   11   AIBN   50   1 二甲苯     70     24   14.12   0.32   29.01   37.86   81.31   4037   6405   VP   12   BF3   10   1 二甲苯     5     2   0.84   0   55.51   39.38   95.73   2078   3229   VP   13   BF3   10   3 二甲苯     5     2   2.26   0.06   47.44   28.93   78.69   1786   2821   VP   14   BF3   25   1 二甲苯     5     2   0.17   0   36.99   41.17   78.33   2381   3549   VP   15   BF3   25   3 二甲苯     5     2   1.33   0.03   35.28   41.08   77.72   2108   3267   VP   16   BF3   40   1 二甲苯     5     2   0.23   0.04   36.46   42.17   78.90   2659   3692   VP   17   BF3   40   3 二甲苯     5     2   0.28   0.01   40.23   38.98   79.50   2270   3376   VA   18   AIBN   20   2 二甲苯     70     24   16.93   1.346   38.42   21.43   78.13   3404   7193   VA   19   AIBN   40   2 二甲苯     70     24   15.45   1.631   31.28   31.64   80.00   3109   6141 table 5 comonomer Copolymer Initiator Comonomer% Initiator% solvent temperature(℃) time (hours) W1 W2 W3 W4 W5 mn mw BA 1 AIBN 11 1 Xylene 70 twenty four 14.63 1.02 33.14 30.44 79.23 4797 10552 BA 2 AIBN 20 1 Xylene 70 twenty four 1.47 0.98 37.92 35.55 75.92 4343 8103 BA 3 AIBN 30 1 Xylene 70 twenty four 13.41 1.6 36.48 27.55 79.04 4638 7826 BA 4 AIBN 50 1 Xylene 70 twenty four 10.01 2.96 46.92 26.51 86.40 3504 5489 BA 5 BF3 10 3 Xylene 5 2 11.93 0.58 40.06 29.33 81.90 1502 2421 VP 6 AIBN 10 1 Xylene 70 twenty four 16.22 0.41 37.8 34.72 89.15 5442 10007 VP 7 AIBN 16 1 THF 60 12 5.32 0.66 46.55 29.59 82.12 1598 2422 VP 8 AIBN 25 1 Xylene 70 twenty four 4.15 0.37 24.98 47.4 76.90 2657 8621 VP 9 AIBN 30 1 Xylene 70 twenty four 14.7 0.69 33.27 39.54 88.20 5342 9303 VP 10 AIBN 40 1 Xylene 70 twenty four 6.34 0.26 33.69 39.38 76.67 4612 7782 VP 11 AIBN 50 1 Xylene 70 twenty four 14.12 0.32 29.01 37.86 81.31 4037 6405 VP 12 BF3 10 1 Xylene 5 2 0.84 0 55.51 39.38 95.73 2078 3229 VP 13 BF3 10 3 Xylene 5 2 2.26 0.06 47.44 28.93 78.69 1786 2821 VP 14 BF3 25 1 Xylene 5 2 0.17 0 36.99 41.17 78.33 2381 3549 VP 15 BF3 25 3 Xylene 5 2 1.33 0.03 35.28 41.08 77.72 2108 3267 VP 16 BF3 40 1 Xylene 5 2 0.23 0.04 36.46 42.17 78.90 2659 3692 VP 17 BF3 40 3 Xylene 5 2 0.28 0.01 40.23 38.98 79.50 2270 3376 VA 18 AIBN 20 2 Xylene 70 twenty four 16.93 1.346 38.42 21.43 78.13 3404 7193 VA 19 AIBN 40 2 Xylene 70 twenty four 15.45 1.631 31.28 31.64 80.00 3109 6141

可将已知的成孔剂如线形聚合物、星形聚合物、交联的聚合物纳米微球、嵌段共聚物和超支化聚合物与上述式I或II的新型热固性组分一起使用。合适的线形聚合物有聚醚,如聚环氧乙烷和聚环氧丙烷;聚丙烯酸酯,如聚甲基丙烯酸甲酯;脂族聚碳酸酯,如聚碳酸丙二醇酯和聚碳酸乙二醇酯;聚酯;聚砜;聚苯乙烯,包括选自卤代苯乙烯和羟基取代的苯乙烯的单体;聚(α-甲基苯乙烯)、聚交酯和其它乙烯基聚合物。有用的聚酯成孔剂包括聚己内酯;聚对苯二甲酸乙二醇酯;聚(氧己二酰氧基-1,4-亚苯基);聚(氧对苯二甲酰氧基-1,4-亚苯基);聚(氧己二酰氧基-1,6-亚己基);聚碳酸酯,如分子量为约500至2500的聚(碳酸己二醇酯)二醇;和聚醚,如分子量为约300至6,500的双酚A-表氯醇共聚物。适当交联的不溶性纳米微球(按照纳米乳液技术制备)适合包括聚苯乙烯或聚甲基丙烯酸甲酯。合适的嵌段共聚物有苯乙烯-α-甲基苯乙烯共聚物、苯乙烯-环氧乙烷共聚物、聚醚内酯、聚酯碳酸酯和聚内酯交酯。合适的超支化聚合物有超支化聚酯,如超支化的聚己内酯,和聚醚,如聚环氧乙烷和聚环氧丙烷。另一种有用的成孔剂为乙二醇-聚己内酯、有用的聚合物嵌段包括聚乙烯基吡啶、超支化聚乙烯基芳族化合物、聚丙烯腈、聚硅氧烷、聚己内酰胺、聚氨酯、聚二烯(如聚丁二烯和聚异戊二烯)、聚氯乙烯、聚缩醛和胺封端的氧化烯。其它有用的热塑性材料包括聚异戊二烯、聚四氢呋喃和聚乙基噁唑啉。Known porogens such as linear polymers, star polymers, crosslinked polymer nanospheres, block copolymers and hyperbranched polymers can be used with the novel thermoset components of formula I or II above. Suitable linear polymers are polyethers such as polyethylene oxide and polypropylene oxide; polyacrylates such as polymethyl methacrylate; aliphatic polycarbonates such as polypropylene carbonate and polyethylene glycol Esters; Polyesters; Polysulfones; Polystyrenes, including monomers selected from the group consisting of halostyrenes and hydroxy-substituted styrenes; poly(alpha-methylstyrene), polylactides, and other vinyl polymers. Useful polyester porogens include polycaprolactone; polyethylene terephthalate; poly(oxyadipyloxy-1,4-phenylene); poly(oxyterephthaloyloxy phenylene-1,4-phenylene); poly(oxyadipyloxy-1,6-hexylene); polycarbonates, such as poly(hexanediol carbonate)diol having a molecular weight of about 500 to 2500 and polyethers such as bisphenol A-epichlorohydrin copolymers having a molecular weight of about 300 to 6,500. Suitably cross-linked insoluble nanoparticles (prepared according to nanoemulsion techniques) suitably comprise polystyrene or polymethylmethacrylate. Suitable block copolymers are styrene-α-methylstyrene copolymers, styrene-ethylene oxide copolymers, polyether lactones, polyester carbonates and polylactonides. Suitable hyperbranched polymers are hyperbranched polyesters, such as hyperbranched polycaprolactone, and polyethers, such as polyethylene oxide and polypropylene oxide. Another useful pore former is ethylene glycol-polycaprolactone, useful polymer blocks include polyvinylpyridine, hyperbranched polyvinylaromatic, polyacrylonitrile, polysiloxane, polycaprolactam , polyurethanes, polydienes (such as polybutadiene and polyisoprene), polyvinyl chloride, polyacetals, and amine-terminated alkylene oxides. Other useful thermoplastic materials include polyisoprene, polytetrahydrofuran, and polyethyloxazoline.

成孔 Hole forming :

本文所用术语“降解”是指共价键的断裂。这种键的断裂可通过异裂和均裂等多种方式发生。键的断裂不必完全,即不必所有可断裂的键均发生断裂。此外,键的断裂中一些键可比其它键断裂得快。例如酯键通常较酰胺键不稳定,因此可以较快的速度断裂。根据降解部分的化学组成,键的断裂还会造成产生的片断彼此不同。The term "degradation" as used herein refers to the breaking of covalent bonds. This bond breaking can occur in various ways such as heterolysis and homolysis. Bond breaking does not have to be complete, ie not all breakable bonds have to be broken. Furthermore, some bonds may break faster than others in the breaking of bonds. For example, ester linkages are generally less stable than amide linkages and thus can be broken at a faster rate. Depending on the chemical composition of the degraded moiety, bond breaking also causes the resulting fragments to differ from each other.

在热降解成孔剂的成孔过程中,将热能施加于含成孔剂的材料上,以将成孔剂基本降解或分解成其原始组分或单体。在此处使用的术语“基本降解”优选是指至少80%重量的成孔剂降解或分解。对于上式I和II的优选的热固性组分来说,Tg为约400℃至450℃,本发明的降解或分解温度为约350℃或以上的成孔剂对这种热固性组分特别有用。对于优选的聚苊基均聚物或共聚物成孔剂来说,我们通过使用如热解吸质谱等分析技术发现成孔剂降解、分解或解聚为苊单体和共聚单体的原始组分。In the pore-forming process of thermally degrading the porogen, thermal energy is applied to the porogen-containing material to substantially degrade or break down the porogen into its original components or monomers. The term "substantially degraded" as used herein preferably means that at least 80% by weight of the porogen degrades or decomposes. For the preferred thermoset compositions of formulas I and II above, porogens of the present invention having a degradation or decomposition temperature of about 350°C or above are particularly useful for such thermoset compositions having a Tg of about 400°C to 450°C. For the preferred polyacenaphthylene-based homopolymer or copolymer porogens, we found that the porogens degrade, decompose, or depolymerize into their original groups of acenaphthyl monomers and comonomers by using analytical techniques such as thermal desorption mass spectrometry. point.

还施加热能以将所述基本降解或分解的成孔剂从热固性组分基体中挥发出来。优选对于降解和挥发步骤使用相同的热能。随着挥发的降解成孔剂的量增加,得到的热固性组分的孔隙率提高。上式I和II的优选的热固性组分的Tg为约400℃至450℃,因此,本发明的基本降解的成孔剂的挥发温度为约280℃或更高,这对于所述热固性组分将非常有用。Thermal energy is also applied to volatilize the substantially degraded or decomposed porogen from the thermosetting component matrix. Preferably the same thermal energy is used for the degradation and volatilization steps. As the amount of volatilized degraded porogen increases, the porosity of the resulting thermoset component increases. The preferred thermosetting components of Formulas I and II above have a Tg of about 400°C to 450°C, therefore, the substantially degraded porogens of the present invention have a volatilization temperature of about 280°C or higher, which is for the thermosetting components will be very useful.

优选用于交联热固性组分的固化温度还将成孔剂基本降解并将其从热固性基体挥发出。典型的固化温度和条件在下面用途部分中描述。Preferably the curing temperature for crosslinking the thermoset component will also substantially degrade the porogen and volatilize it from the thermoset matrix. Typical curing temperatures and conditions are described in the uses section below.

所得孔可均匀或无规分散在整个基体中。优选所述孔均匀分散在整个基体中。The resulting pores can be uniformly or randomly dispersed throughout the matrix. Preferably the pores are evenly dispersed throughout the matrix.

或者,还可使用其中至少部分除去成孔剂而不会有损热固性组分的其它方法或条件。优选基本除去成孔剂。一般的除去方法包括但不限于暴露于辐射,例如但不限于电磁辐射,如紫外、X射线、激光或红外辐射;机械能,如超声波或物理压力;或粒子辐射,如γ射线、α粒子、中子束或电子束。Alternatively, other methods or conditions in which the porogen is at least partially removed without detriment to the thermoset component may also be used. The porogen is preferably substantially removed. Common methods of removal include, but are not limited to, exposure to radiation, such as, but not limited to, electromagnetic radiation such as ultraviolet, X-ray, laser, or infrared radiation; mechanical energy such as ultrasound or physical pressure; or particle radiation such as gamma rays, alpha particles, neutral beamlets or electron beams.

用途 Uses :

本文中使用的术语“层”包括薄膜和涂层。The term "layer" as used herein includes films and coatings.

本文中使用的术语“低介电常数聚合物”是指介电常数约为3.0或更低的有机、有机金属或无机聚合物。通常制得的低介电材料为厚度100至25,000埃的薄层,但可用作厚薄膜、块体、柱体、球体等等。As used herein, the term "low dielectric constant polymer" refers to an organic, organometallic or inorganic polymer having a dielectric constant of about 3.0 or less. Low dielectric materials are typically produced as thin layers with a thickness of 100 to 25,000 Angstroms, but are available as thick films, bulks, cylinders, spheres, etc.

本发明的热固性组分、增粘剂和成孔剂的组合物可用于降低材料的介电常数。优选所述介电材料的介电常数k小于或等于约3.0,更优选约1.9至3.0。所述介电材料的玻璃化转变温度优选至少为约350℃。Combinations of thermosetting components, tackifiers, and porogens of the present invention can be used to lower the dielectric constant of materials. Preferably, the dielectric material has a dielectric constant k less than or equal to about 3.0, more preferably about 1.9 to 3.0. The dielectric material preferably has a glass transition temperature of at least about 350°C.

本发明的热固性组分、增粘剂和成孔剂的组合物的层可通过如喷涂、辊涂、浸涂、旋涂、流涂或浇铸等溶液技术形成,微电子领域中优选使用旋涂。优选将本发明组合物溶于溶剂中。用于本发明组合物的这些溶液的合适溶剂包括在一定的温度下挥发的任何适当纯的有机、有机金属或无机分子或它们的混合物。合适的溶剂包括非质子溶剂:例如环酮如环戊酮、环己酮、环庚酮和环辛酮;环酰胺如N-烷基吡咯烷酮,其中烷基具有1-4个碳原子;和N-环己基吡咯烷酮以及它们的混合物。可使用多种其它有机溶剂,只要它们有助于增粘剂的溶解并同时能有效控制所得溶液(用作涂层溶液)的粘性即可。可使用各种方便的措施如搅拌和/或加热来辅助溶解。其他合适的溶剂包括丁酮、甲基异丁基酮、二丁醚、环二甲基聚硅氧烷、丁内酯、γ-丁内酯、2-庚酮、3-乙氧基丙酸乙酯、聚乙二醇[二]甲醚、丙二醇单甲醚乙酸酯(PGMEA)和苯甲醚,和烃类溶剂如1,3,5-三甲苯、二甲苯、甲苯和苯。优选的溶剂是环己酮。层厚度一般约为0.1-15微米。应用在微电子领域的介电夹层的层厚度一般低于2微米。The layer of the combination of thermosetting component, adhesion promoter and porogen of the present invention can be formed by solution techniques such as spray coating, roll coating, dip coating, spin coating, flow coating or casting, preferably using spin coating in the field of microelectronics . The compositions of the invention are preferably dissolved in a solvent. Suitable solvents for these solutions of the compositions of the present invention include any suitably pure organic, organometallic or inorganic molecule or mixtures thereof which volatilize at a certain temperature. Suitable solvents include aprotic solvents: for example cyclic ketones such as cyclopentanone, cyclohexanone, cycloheptanone and cyclooctanone; cyclic amides such as N-alkylpyrrolidones, wherein the alkyl group has 1 to 4 carbon atoms; and N - cyclohexylpyrrolidone and mixtures thereof. Various other organic solvents can be used as long as they facilitate the dissolution of the tackifier while effectively controlling the viscosity of the resulting solution (used as a coating solution). Various convenient measures such as stirring and/or heating can be used to assist dissolution. Other suitable solvents include methyl ethyl ketone, methyl isobutyl ketone, dibutyl ether, cyclomethicone, butyrolactone, gamma-butyrolactone, 2-heptanone, 3-ethoxypropionic acid Ethyl esters, polyethylene glycol [di]methyl ether, propylene glycol monomethyl ether acetate (PGMEA), and anisole, and hydrocarbon solvents such as 1,3,5-trimethylbenzene, xylene, toluene, and benzene. A preferred solvent is cyclohexanone. The layer thickness is generally about 0.1-15 microns. Dielectric interlayers used in microelectronics typically have a layer thickness of less than 2 microns.

本发明组合物可用于电子设备,更具体地用作与单独的集成电路(“IC”)块相伴内连中的夹层电介质。集成电路块表面一般具有多层本发明组合物的层和多层金属导体。在同一层或同一水平集成电路的分散的金属导体之间或导体区域中也可包括本发明组合物的区域。The compositions of the present invention are useful in electronic devices, more particularly as interlayer dielectrics in interconnects associated with individual integrated circuit ("IC") blocks. The surface of an integrated circuit chip typically has multiple layers of the composition of the invention and multiple layers of metal conductors. Regions of the composition of the invention may also be included between discrete metal conductors or in regions of conductors in the same layer or level of integrated circuits.

在将本发明聚合物应用到各种IC中时,本发明组合物的溶液通过常规的湿涂方法(例如旋涂)涂覆到半导体晶片上,其它众所周知的涂覆技术,如喷涂、流涂或浸涂也可用于具体实例中。例如,将本发明组合物的环己酮溶液旋涂到在其上装配有导电元件的基体上,然后将经涂覆的基体进行热处理。遵循严格的清洁操作规程(clean-handling protocol)以防止任何具有非金属衬里的常规装置中产生的痕量金属污染,本发明组合物的示例性制剂在环境条件下将本发明组合物溶于环己酮溶剂中制备。所得的溶液优选包括占总溶液重量约70-98%重量的热固性组分、约2-30%重量的增粘剂、约5-25%重量的成孔剂以及约75-95%重量的溶剂。In applying the polymers of the invention to various ICs, solutions of the compositions of the invention are applied to semiconductor wafers by conventional wet coating methods such as spin coating, other well known coating techniques such as spray coating, flow coating Or dip coating can also be used in specific examples. For example, a cyclohexanone solution of the composition of the present invention is spin-coated onto a substrate on which a conductive element is mounted, and then the coated substrate is subjected to heat treatment. Following a strict clean-handling protocol to prevent trace metal contamination in any conventional device with a non-metallic lining, an exemplary formulation of the composition of the invention dissolves the composition of the invention in a ring under ambient conditions. Prepared in hexanone solvent. The resulting solution preferably comprises about 70-98% by weight of the thermosetting component, about 2-30% by weight of the tackifier, about 5-25% by weight of the porogen, and about 75-95% by weight of the solvent, based on the total solution weight. .

本发明的用途举例如下。将本发明组合物在平面或局部表面或基体上形成层的应用可通过任何常规装置实现,优选所述装置为旋涂涂布器,因为所用组合物具有适合这种涂布器的可控粘度。挥发溶剂可通过任何适当的方法,例如在旋涂中采用简单的空气干燥,也可采用暴露在周围环境中或在电热板中加热至350℃来挥发溶剂。基体上至少有一层本发明的热固性组分、增粘剂和成孔剂的优选组合物层。The uses of the present invention are exemplified as follows. The application of the composition of the invention to form a layer on a planar or partial surface or substrate can be achieved by any conventional means, preferably said means being a spin-on applicator, since the composition used has a controlled viscosity suitable for such an applicator . The solvent can be evaporated by any suitable method, such as simple air drying in spin coating, exposure to ambient environment or heating to 350° C. on a hot plate to evaporate the solvent. The substrate has at least one layer of the preferred combination of thermosetting component, adhesion promoter and porogen of the present invention.

本文中考虑使用的基体可包括任何基本上符合需用的固体原料。具体地讲,符合需用的基体层包括薄膜、玻璃、陶瓷、塑料、金属或带涂层的金属或复合材料。在优选的实施方案中,基体包括:硅或镓砷化物模具或晶片表面;包装表面,如镀铜、银、镍或金的导线架;铜表面,如线路板或包装连接线、通孔壁或硬化剂界面(“铜”包括裸铜及其氧化物);聚合物基包装或板界面,如聚酰亚胺基弯曲包装、铅或其他金属合金焊接球表面、玻璃和聚合物。有用的基体包括硅、氮化硅、氧化硅、碳氧化硅、二氧化硅、碳化硅、氮氧化硅、一氮化钛、一氮化钽、氮化钨、铝、铜、钽、有机硅氧烷、有机硅玻璃和氟化硅玻璃。在其他实施方案中,基体包括在包装和线路板工业,如硅、铜、玻璃和聚合物工业中的普通材料。本发明组合物也可用作微型芯片、多片组件、层压线路板或印刷插线板的介电基体材料。本发明组合物形成的线路板表面上已经安装有用于各种电导体线路的分布图。线路板可包括各种增强材料,如不导电的编织纤维或玻璃棉。这些线路板可为单面也可为双面。Substrates contemplated for use herein may comprise substantially any desired solid material. In particular, suitable substrate layers include films, glass, ceramics, plastics, metals or coated metals or composite materials. In a preferred embodiment, the substrate comprises: a silicon or gallium arsenide die or wafer surface; a package surface, such as a copper, silver, nickel or gold plated leadframe; a copper surface, such as a circuit board or package connection wire, via wall or hardener interfaces (“copper” includes bare copper and its oxides); polymer-based package or board interfaces such as polyimide-based flex packages, lead or other metal alloy solder ball surfaces, glass, and polymers. Useful substrates include silicon, silicon nitride, silicon oxide, silicon oxycarbide, silicon dioxide, silicon carbide, silicon oxynitride, titanium nitride, tantalum nitride, tungsten nitride, aluminum, copper, tantalum, silicone Oxane, silicone glass and fluorinated silicon glass. In other embodiments, the substrate includes common materials found in the packaging and circuit board industries, such as silicon, copper, glass and polymer industries. The compositions of the present invention are also useful as dielectric matrix materials for microchips, multichip modules, laminated wiring boards or printed wiring boards. The surface of a circuit board formed from the composition of the present invention has installed thereon a pattern for the various electrical conductor circuits. Circuit boards can include various reinforcement materials such as non-conductive woven fibers or glass wool. These circuit boards can be single-sided or double-sided.

本发明组合物制备的层具有低介电常数、高热稳定性、高机械强度和对电子基体表面的优良粘性。因为增粘剂的分子分散分布,因此,已证明这些层对所有附着表面(包括下层基体、覆盖层或掩盖层,如SiO2和Si3N4覆盖层)都具有优异的粘合性。这些层的应用不再需要使用至少一种底漆涂层以使所述膜粘附于基体和/或覆盖表面上的额外加工步骤。Layers prepared from the compositions of the invention have low dielectric constants, high thermal stability, high mechanical strength and excellent adhesion to electronic substrate surfaces. Because of the molecularly dispersed distribution of adhesion promoters, these layers have demonstrated excellent adhesion to all attachment surfaces, including underlying substrates, overlays or masking layers such as SiO2 and Si3N4 overlays. The application of these layers eliminates the need for additional processing steps using at least one primer coat to adhere the film to the substrate and/or covering surface.

在将本发明组合物施用于电子地形基片之后,使涂层结构在从约50℃至最高约450℃的增加温度范围内进行烘烤和固化热处理,以使涂料聚合。固化温度为至少约300℃,因为低温无法完成反应。一般情况下优选固化在约375℃至约425℃的温度下进行。固化可在通用的固化室(如电炉、电热板等)内进行,并通常在固化室内的惰性(非氧化)气氛(氮气)中进行。除了电炉或电热板固化之外,如已共同转让的专利公开PCT/US96/08678和美国专利6,042,994、6,080,526、6,177,143和6,235,353(通过引用以上文献的全部并入本文)中所述,本发明组合物也可通过暴露于紫外线照射、微波辐射或电子束辐射进行固化。在实施本发明时,可采用任何非氧化或还原气氛(如氩气、氦气、氢气和氮气等加工气体),只要这些气氛能有效固化本发明的增粘剂改性的热固性组分以获得低k的介电层。After application of the composition of the present invention to the electro-topographic substrate, the coated structure is subjected to a bake and cure heat treatment at increasing temperatures ranging from about 50°C up to about 450°C to polymerize the coating. The curing temperature is at least about 300°C because low temperatures do not complete the reaction. It is generally preferred that curing be carried out at a temperature of from about 375°C to about 425°C. Curing can be carried out in a conventional curing chamber (such as an electric furnace, hot plate, etc.), and is usually carried out in an inert (non-oxidizing) atmosphere (nitrogen) inside the curing chamber. In addition to oven or hot plate curing, compositions of the present invention as described in commonly assigned patent publication PCT/US96/08678 and U.S. Patent Nos. Curing can also be effected by exposure to ultraviolet radiation, microwave radiation or electron beam radiation. In the practice of the present invention, any non-oxidizing or reducing atmosphere (such as processing gases such as argon, helium, hydrogen, and nitrogen) may be employed so long as these atmospheres are effective in curing the tackifier-modified thermosetting components of the present invention to obtain low-k dielectric layer.

推测本发明的低介电常数组合物的加工方法将产生热固性组分、增粘剂和成孔剂的均匀溶液,但不受这种推测的限制。所述优选的硅烷增粘剂在低介电常数组合物中将有利地发挥多种功能。例如,本发明组合物的加工使得优选的聚碳硅烷增粘剂同时与成孔剂和热固性组分的不饱和结构相互作用。相信所述优选的聚碳硅烷增粘剂的硅烷部分与成孔剂和热固性组分相互作用。推测所述聚碳硅烷起表面活性剂或乳化剂的作用,将成孔剂均匀分散在所述低介电组合物的热固性组分中。这对于得到能产生均匀膜(或层,其中均匀分散了非常小尺寸的孔)的组合物来说相当重要。所述聚碳硅烷的硅烷部分同时还与基体的表面反应,由此生成了用于主要热固性单体前体的化学键合的粘合界面,其中亚甲硅烷基/甲硅烷基遍布整个组合物,作为接合源固定并稳固任何化学键连接的界面表面。所述不同组分间的相互作用以及硅烷部分的反应也可在层形成之前的配制和处理期间发生。如同已经指出的,硅烷官能团与成孔剂及热固性组分在整个组合物中的分散使得得到的层具有均匀的多孔性。硅烷官能团的分散还导致活性基团以及所述层对下层基体表面以及覆盖层表面结构(如表层或掩蔽层)的优异粘合性。在本发明中发现的材料的重要之处在于发现优选的式XXXVII聚碳硅烷增粘剂在聚碳硅烷骨架结构上具有活泼氢取代的硅。聚碳硅烷的该特征使得其可:(1)与成孔剂均匀混合,形成均匀组合物;(2)与热固性组分反应;(3)将成孔剂在热固性组分中均匀混合及分散,得到均匀的组合物,从而得到具有均匀分散的小孔的最终多孔性层;和(4)产生具有提高的粘性的聚碳硅烷-改性的热固性组合物。It is hypothesized that the processing method of the low dielectric constant composition of the present invention will result in a homogeneous solution of the thermosetting component, tackifier, and porogen, but without being limited by such speculation. The preferred silane adhesion promoters will advantageously serve multiple functions in the low dielectric constant composition. For example, processing of the compositions of the present invention allows the preferred polycarbosilane adhesion promoter to interact with both the porogen and the unsaturated structure of the thermoset component. It is believed that the silane moieties of the preferred polycarbosilane adhesion promoters interact with the porogen and thermoset components. It is speculated that the polycarbosilane acts as a surfactant or emulsifier to uniformly disperse the porogen in the thermosetting component of the low dielectric composition. This is important in order to obtain a composition that produces a homogeneous film (or layer in which pores of very small size are uniformly dispersed). The silane moiety of the polycarbosilane also reacts with the surface of the substrate thereby creating an adhesive interface for chemical bonding of the primary thermosetting monomer precursor with silylene/silyl groups throughout the composition, Acts as a bonding source to anchor and stabilize any chemically bonded interfacial surfaces. The interaction between the different components and the reaction of the silane moieties can also occur during formulation and handling prior to layer formation. As already indicated, the dispersion of the silane functionality with the porogen and thermosetting components throughout the composition results in a uniform porosity of the resulting layer. The dispersion of the silane functional groups also results in excellent adhesion of the reactive groups and the layer to the underlying substrate surface as well as to overlying surface structures such as skin or masking layers. Important to the materials discovered in the present invention is the discovery that the preferred polycarbosilane adhesion promoters of formula XXXVII have active hydrogen substituted silicon on the polycarbosilane backbone structure. This feature of polycarbosilane allows it to: (1) uniformly mix with the pore forming agent to form a uniform composition; (2) react with the thermosetting component; (3) uniformly mix and disperse the pore forming agent in the thermosetting component, A homogeneous composition is obtained, resulting in a final porous layer with uniformly dispersed pores; and (4) resulting in a polycarbosilane-modified thermoset composition with enhanced viscosity.

如前所述,本发明的增粘剂改性的热固性组分(a)涂层可作为夹层和被其它涂层所覆盖,所述的其它涂层如其它介电(SiO2)涂层、SiO2改性陶瓷氧化物层、含硅涂层、含碳硅涂层、含硅氮涂层、含硅-氮-碳涂层、类金刚石碳涂层、一氮化钛涂层、一氮化钽涂层、一氮化钨涂层、铝涂层、铜涂层、钽涂层、有机硅氧烷涂层、有机硅玻璃涂层和氟化的硅玻璃涂层。这种多层涂料见述于美国专利4,973,526号(通过引用将其并入本文)中。同时,如已充分论证的那样,在本发明方法中制备的本发明的聚碳硅烷改性的热固性组分(a)很容易在装配式电子或半导体基片上的相邻导电线路间形成夹层介电层。As previously mentioned, the adhesion promoter modified thermosetting component (a) coating of the present invention can be interlayered and overlaid by other coatings such as other dielectric ( SiO2 ) coatings, SiO 2 modified ceramic oxide layer, silicon-containing coating, carbon-silicon coating, silicon-nitrogen coating, silicon-nitrogen-carbon coating, diamond-like carbon coating, titanium nitride coating, nitrogen Tantalum oxide coatings, tungsten nitride coatings, aluminum coatings, copper coatings, tantalum coatings, organosiloxane coatings, silicone glass coatings, and fluorinated silica glass coatings. Such multilayer coatings are described in US Patent No. 4,973,526 (herein incorporated by reference). At the same time, as fully demonstrated, the polycarbosilane-modified thermosetting component (a) of the present invention prepared in the process of the present invention is easy to form an interlayer interlayer between adjacent conductive lines on assembled electronic or semiconductor substrates. electrical layer.

本发明的层的介电常数最好低于2.7、优选低于2.5、更优选低于2.2并最优选低于2.0。The dielectric constant of the layer of the invention is preferably below 2.7, preferably below 2.5, more preferably below 2.2 and most preferably below 2.0.

对于集成电路生产来说,本发明的薄膜可用于双镶嵌(如铜)处理和基层金属(如铝或铝/钨)处理。本发明组合物可用作防蚀剂(etchstop)、硬遮蔽(hardmask)、空运线或钝化涂料用于包裹整个晶片。如同Michael E.Thomas在“Spin-On Stacked Films for Low koffDielectrics”, Solid State Technology(2001年7月)(通过引用将其全部并入本文)中所指出的那样,本发明组合物可在所有合乎要求的压旋层叠薄膜中使用。所述层可与其它包含下述物质的层进行层叠:有机硅氧烷,如已共同转让的美国专利6,143,855和正在审理中的美国系列号10/078919(2002年2月19日)所述;Honeywell International Inc.的市售HOSP产品;微孔二氧化硅,如已共同转让的美国专利6,372,666所述;Honeywell International Inc.的市售NANOGLASSE产品;有机倍半硅氧烷,如已共同转让的WO 01/29052所述;和氟倍半硅氧烷,如已共同转让的WO 01/29141所述(通过引用全部并入本文)。For integrated circuit production, the films of the invention can be used in dual damascene (eg copper) processing and base metal (eg aluminum or aluminum/tungsten) processing. The compositions of the present invention can be used as etchstops, hardmasks, airline or passivation coatings for encapsulation of entire wafers. As noted by Michael E. Thomas in "Spin-On Stacked Films for Low koff Dielectrics", Solid State Technology (July 2001), which is hereby incorporated by reference in its entirety, the compositions of the present invention can be used in all suitable Used in press-spin laminated films as required. The layers may be laminated with other layers comprising organosiloxanes as described in commonly assigned US Patent 6,143,855 and pending US Serial No. 10/078919 (February 19, 2002); HOSP® products commercially available from Honeywell International Inc.; microporous silica, as described in commonly assigned U.S. Patent 6,372,666; commercially available NANOGLASS® E products from Honeywell International Inc.; organosilsesquioxanes, as described in commonly assigned U.S. Patent 6,372,666; as described in assigned WO 01/29052; and fluorosilsesquioxanes as described in commonly assigned WO 01/29141 (hereby incorporated by reference in its entirety).

分析试验方法 Analytical test method :

1 H NMR:将2-5毫克待分析原料样品置于NMR样品管中。加入约0.7毫升的氘代氯仿。用手振摇混合物以使原料溶解。然后用Varian 400MHz NMR分析样品。 1 H NMR : A 2-5 mg sample of the starting material to be analyzed is placed in an NMR sample tube. Add approximately 0.7 mL of deuterated chloroform. Shake the mixture by hand to dissolve the ingredients. Samples were then analyzed by Varian 400MHz NMR.

凝胶渗透色谱(GPC):用带有Waters 996二极管阵列和Waters 410差示折光检测器的Waters 2690分离组件进行分离。以流速为1ml/min的氯仿为流动相、用两根PLgel 3μm Mixed-E 300×7.5mm柱进行分离。将浓度约为1mg/ml的溶液以25μl的体积进样,重复一次。观察到良好的重现性。 Gel Permeation Chromatography (GPC) : Separation was performed using a Waters 2690 separation module with a Waters 996 diode array and a Waters 410 differential refractive index detector. Using chloroform at a flow rate of 1ml/min as the mobile phase, two PLgel 3μm Mixed-E 300×7.5mm columns were used for separation. A solution at a concentration of approximately 1 mg/ml was injected in a volume of 25 μl in duplicate. Good reproducibility was observed.

用分子量在20,000至500间的各种相对单分散聚苯乙烯标准物对柱进行校正。采用较低分子量的标准物,可将9种不同的组分解析为9种苯乙烯,即丁基末端的苯乙烯单体至低聚物9种。标准物的峰分子量的对数值与洗脱时间的三阶多项式相对应。仪器加宽效应通过半峰宽与甲苯的平均洗脱时间的比值来评价。The columns were calibrated with various relatively monodisperse polystyrene standards ranging in molecular weight from 20,000 to 500. Using lower molecular weight standards, 9 different components could be resolved into 9 styrenes, ie, butyl-terminated styrene monomers to oligomers. The logarithm of the peak molecular weight of the standard corresponds to a third order polynomial of the elution time. The instrument broadening effect was evaluated by the ratio of half peak width to the average elution time of toluene.

下述制备1和2在约2g4nm处的吸光度最大。吸收波长在约300nm以下的图谱有相似的峰形。这里显示的结果为在254nm的吸光度。通过在相同时间洗脱出的所述聚苯乙烯的已知分子量来确定峰值。这些数值不应看为是制备1和2的低聚物的分子量。可测量出随时间顺序洗脱出的较高级的低聚物、三聚体、二聚体、低聚物和不完全的低聚物的分子量。Preparations 1 and 2 described below had a maximum absorbance at about 2 g 4 nm. The spectrum with absorption wavelength below about 300nm has a similar peak shape. Results shown here are absorbance at 254 nm. The peak was determined by the known molecular weight of the polystyrene eluting at the same time. These values should not be interpreted as the molecular weight of the oligomers from which 1 and 2 were made. The molecular weight of higher oligomers, trimers, dimers, oligomers and incomplete oligomers eluted sequentially over time can be measured.

每种组分的峰均比单分散物质所观察到的要宽。该宽度通过半峰宽(单位分钟)进行分析。为概略说明仪器加宽效应,按下式进行计算:The peaks for each component were broader than that observed for monodisperse material. The width is analyzed by half width (in minutes). In order to roughly illustrate the broadening effect of the instrument, the calculation is carried out according to the following formula:

宽度校正=[宽度观测 2-宽度仪器 2]1/2 Width Correction = [Width Observation2 - Width Instrument2 ] 1/2

其中宽度仪器为通过峰洗脱时间与甲苯的洗脱时间的比值校正的甲苯的观测宽度。峰宽通过校正曲线转化为分子量宽度并与峰位分子量宽度进行求比。因为苯乙烯低聚物的分子量与它们尺寸的平方成正比,所以相对分子量宽度除以2可转化为相应低聚物尺寸宽度。该方法可用于说明两种物质的分子构型差异。where the width instrument is the observed width of toluene corrected by the ratio of peak elution time to that of toluene. The peak width is converted to the molecular weight width through the calibration curve and compared with the peak molecular weight width. Since the molecular weight of styrene oligomers is proportional to the square of their size, the relative molecular weight breadth divided by 2 can be converted to the corresponding oligomer size breadth. This method can be used to account for differences in the molecular configuration of two substances.

13 C NMR:T1的初始测量显示最大值为4秒,所以按此设置循环时间以获得定量结果。将所有样品溶于CDCl3中并累加扫描4000次。通过DEPT确定分别归属于-C、-CH、-CH2和-CH3基团的位移。DEPT清楚地鉴定41ppm为-CH2,该基团位于C10金刚烷上不含支链(arm)的碳相邻的3位上,以及30ppm为-CH,该基团位于未取代位上。与连接支链相邻的C10金刚烷的-CH2出现在46-48ppm处。类似的,位于35ppm的季碳和位于31.5ppm的-CH3可归属于叔丁基。在芳族特征区域,120和123.5之间的峰簇清楚地表明为非质子化的芳族化合物。根据化学位移,我们将这些碳归属为溴代芳碳。位于145-155ppm范围内的季芳族化合物认为是与脂族基团连接的芳环碳,即C10金刚烷就属于这种情况。一些光谱图中在约14、23、29和31.5ppm处也有峰。这些峰为用于洗涤样品的庚烷所产生。庚烷的相对量在不同样品间变化很大。我们没有定量庚烷,因为这对最终结果并不重要。 13 C NMR : Initial measurements of T 1 showed a maximum of 4 seconds, so set the cycle time as such to obtain quantitative results. All samples were dissolved in CDCl 3 and scanned 4000 times cumulatively. The shifts assigned to the -C, -CH, -CH2 , and -CH3 groups, respectively, were determined by DEPT. DEPT clearly identified 41 ppm as -CH2 , the group at position 3 adjacent to the unbranched (arm) carbon on the C10 adamantane, and 30 ppm as -CH, the group at the unsubstituted position. The -CH of the C 10 adamantane adjacent to the linking branch occurs at 46–48 ppm. Similarly, the quaternary carbon at 35 ppm and -CH3 at 31.5 ppm can be attributed to tert-butyl. In the region of aromatic character, the cluster of peaks between 120 and 123.5 clearly indicates unprotonated aromatics. Based on the chemical shifts, we assigned these carbons as bromoaryl carbons. Quaternary aromatics located in the 145-155 ppm range are considered to be aromatic ring carbons attached to aliphatic groups, which is the case for C 10 adamantanes. There are also peaks at about 14, 23, 29 and 31.5 ppm in some spectra. These peaks are due to the heptane used to wash the samples. The relative amount of heptane varied widely between samples. We did not quantify the heptane as this is not critical to the final result.

NMR条件:NMR conditions:

·在Varian Unity Inova 400获得高分辨率的13C NMR光谱Acquisition of high-resolution 13 C NMR spectra on a Varian Unity Inova 400

·13C频率:100.572MHz 13C frequency: 100.572MHz

·门控1H去偶,使用WALTZ调制· Gated 1 H decoupling, using WALTZ modulation

·谱宽:25kHzSpectral width: 25kHz

·13C的π/2脉冲-13μs。• π/2 pulse of 13 C - 13 μs.

·循环时间:20秒·Cycle time: 20 seconds

·#数据点:100032,2秒取数时间·#data point: 100032, 2 seconds to fetch data

·0至131072点,FT0 to 131072 points, FT

·1Hz指数平滑法1Hz exponential smoothing method

液相色谱-质谱(LC-MS):在带有常压电离(API)界面设备、使用Hewlett-Packard系列1050 HPLC系统作为色谱进样器的Finnigan/MAT TSQ7000三节四极质谱仪系统中进行分析。对于时间-强度色谱图来说,质谱离子流和可变单波长紫外数据均可以获得。 Liquid Chromatography-Mass Spectrometry (LC-MS) : Analysis was performed on a Finnigan/MAT TSQ7000 three-section quadrupole mass spectrometer system with an atmospheric pressure ionization (API) interface device using a Hewlett-Packard Series 1050 HPLC system as the chromatographic injector . For time-intensity chromatograms, both mass spec ion current and variable single-wavelength UV data are available.

色谱在Phenomenex Luna 5微米苯基-己基(pheny-hexyl)柱(250×4.6mm)上进行。自动注射样品一般为5-20微升的四氢呋喃或非四氢呋喃浓溶液。优选的分析用浓样品溶液的制备是通过将约5毫克的固体样品溶于每毫升四氢呋喃中制得,取10微升注射进样。流过色谱柱的流动相为流速1.0毫升/分钟的乙腈/水,开始1分钟为70/30然后梯度升高至在10分钟时为100%乙腈,持续至40分钟。Chromatography was performed on a Phenomenex Luna 5 micron phenyl-hexyl column (250 x 4.6 mm). The automatic injection sample is generally 5-20 microliters of tetrahydrofuran or non-tetrahydrofuran concentrated solution. A preferred analytical concentrated sample solution is prepared by dissolving approximately 5 mg of solid sample per mL of tetrahydrofuran and injecting 10 microliters. The mobile phase passed through the column was acetonitrile/water at a flow rate of 1.0 mL/min, starting with 70/30 for 1 minute and then ramping up to 100% acetonitrile at 10 minutes and continuing through 40 minutes.

在分离实验中,常压化学电离(APCI)质谱可同时记录阳离子电离和阴离子电离。对这些最终产物而言,阳离子APCI更多的是提供质子化的假分子离子(包括与乙腈基体的加合物)的分子结构信息。APCI电晕放电为5微安培,阳离子电离电压为约5kV和阴离子电离电压为约4kV。保持加热的毛细管线在200℃和气化室在400℃。四极质量分析后的离子检测系统设于15kV的转换打拿极和1500V的电子倍增电压。对阴离子电离而言,质谱在1.0秒/扫描下一般自约m/z50记录到2000a.m.u,对阳离子电离而言,自约m/z 150 a.m.u开始。在分离阳离子实验中,质量范围在低质量调整/校正模式中扫描到2000a.m.u和在高质量调整/校正模式中扫描到4000a.m.u。In separation experiments, atmospheric pressure chemical ionization (APCI) mass spectrometry can simultaneously record cation ionization and anion ionization. For these final products, cationic APCI provides more information on the molecular structure of protonated pseudomolecular ions (including adducts with acetonitrile matrix). The APCI corona discharge is 5 microamperes, the cation ionization voltage is about 5 kV and the anion ionization voltage is about 4 kV. Keep the heated capillary line at 200 °C and the vaporization chamber at 400 °C. The ion detection system after quadrupole mass analysis was set at a switching dynode of 15kV and an electron multiplication voltage of 1500V. Mass spectra are typically recorded from about m/z 50 to 2000 a.m.u at 1.0 sec/scan for anion ionization and from about m/z 150 a.m.u for cation ionization. In separation cation experiments, the mass range was scanned to 2000 a.m.u in low mass adjustment/calibration mode and to 4000 a.m.u in high mass adjustment/calibration mode.

差示扫描量热法(DSC):DSC测定采用与控制器相连接的TAInstrumert 2920差示扫描量热计及相关软件进行。使用温度范围为250℃-725℃(惰性环境:50ml/min氮气)的标准DSC室进行分析。使用液氮作为冷却气源。使用精度为±0.0001克的Mettler Toledo分析天平仔细称量少量样品(10-12mg)并置于自动DSC铝样品盘中(编号#990999-901)。用已在中间穿孔以便排气的盖子封盖盘而将样品密封。样品在氮气中以100℃/min(循环1)的速率自0℃加热至450℃,随后以100℃/min的速率冷却至0℃。立即进行第二循环,以100℃/min的速率(重复循环1)自0℃加热至450℃。交联温度由第一循环确定。 Differential Scanning Calorimetry (DSC) : The DSC measurement is carried out with a TAInstrumert 2920 differential scanning calorimeter connected to a controller and related software. The analysis was performed using a standard DSC chamber with a temperature range of 250°C - 725°C (inert atmosphere: 50ml/min nitrogen). Use liquid nitrogen as the cooling gas source. Small samples (10-12 mg) were carefully weighed using a Mettler Toledo analytical balance with an accuracy of ±0.0001 gram and placed in an automated DSC aluminum sample pan (Cat #990999-901). Samples were sealed by covering the pan with a lid that had been perforated in the middle to allow for venting. The sample was heated from 0°C to 450°C at a rate of 100°C/min (cycle 1) in nitrogen and then cooled to 0°C at a rate of 100°C/min. A second cycle was immediately performed, heating from 0°C to 450°C at a rate of 100°C/min (repeated cycle 1). The crosslinking temperature is determined by the first cycle.

FTIR分析:使用Nicolet Magna 550 FTIR分光光度计,以透射模式获得FTIR光谱。基体背景图谱由不带涂层的基体获得。以基体为背景得到薄膜图谱。然后对薄膜光谱进行峰位和强度的变化进行分析。 FTIR analysis: FTIR spectra were acquired in transmission mode using a Nicolet Magna 550 FTIR spectrophotometer. Substrate background spectra were obtained from uncoated substrates. Thin film spectra were obtained with the substrate as the background. Then the thin film spectrum is analyzed for changes in peak position and intensity.

介电常数:介电常数通过在固化层上涂覆一层薄的铝膜,然后在1MHz下进行电容-电压的测定并根据层厚度计算k值来确定。 Dielectric constant: The dielectric constant is determined by coating a thin aluminum film on the cured layer, then performing a capacitance-voltage measurement at 1 MHz and calculating the k value from the layer thickness.

玻璃化转变温度(Tg):薄膜的玻璃化转变温度通过测量作为温度函数的薄膜应力来确定。薄膜应力用KLA 3220 Flexus进行测量。在薄膜测量之前,先将未涂覆的晶片在500℃下退火60分钟以避免由于晶片本身的应力松弛而产生的任何误差。然后将晶片用待测定的材料涂覆并按所有必需的处理步骤处理。接着将晶片放于压力计中,测量作为温度函数的晶片弯曲度。根据已知的晶片厚度和薄膜厚度,该仪器计算绘出应力对温度的曲线图。结果以图形式显示。为确定Tg值,作出一水平切线(应力对温度曲线图上0斜率值)。Tg值为曲线图和水平切线的交叉点。 Glass Transition Temperature (Tg) : The glass transition temperature of a film is determined by measuring the film stress as a function of temperature. Film stress was measured with a KLA 3220 Flexus. Before thin film measurements, the uncoated wafers were annealed at 500°C for 60 min to avoid any errors due to stress relaxation of the wafer itself. The wafer is then coated with the material to be tested and processed according to all necessary processing steps. The wafer is then placed in a pressure gauge and the wafer bow is measured as a function of temperature. Based on known wafer thickness and film thickness, the instrument calculates a graph of stress versus temperature. The results are displayed graphically. To determine the Tg value, draw a horizontal tangent (0 slope value on the stress versus temperature graph). The Tg value is the intersection of the graph and the horizontal tangent.

如果Tg值是经第一温度循环或随后的使用最高温度的循环后确定的则应该指出,因为测量方法本身会影响Tg。It should be noted if the Tg value is determined after the first temperature cycle or the subsequent cycle using the highest temperature, since the method of measurement itself affects the Tg.

等温重量分析(ITGA)失重:总失重由与TA仪器热分析控制器连接使用的TA仪器2950热重分析仪(TGA)和相关软件确定。使用Platinel II热电偶和温度范围为25℃-1000℃、加热速率为0.1℃-100℃/min的标准熔炉。用TGA天平(分辨率:0.1g;精度:至±0.1%)称量少量样品(7-12mg)并在铂盘上加热。样品在吹扫速度为100ml/min(60ml/min吹到熔炉和40ml/min吹到天平)的氮气下加热。将样品在氮气条件、20℃下平衡20分钟,然后以10℃/分钟的速度将温度升至200℃并在200℃下维持10分钟。接着以10℃/分钟的速度将温度升至425℃并在425℃下维持4小时。计算425℃下4小时期间的重量损失。 Isothermal Gravimetric Analysis (ITGA) Weight Loss: The total weight loss was determined by a TA Instruments 2950 Thermogravimetric Analyzer (TGA) used in connection with a TA Instruments Thermal Analysis Controller and associated software. A Platinel II thermocouple and a standard furnace with a temperature range of 25°C to 1000°C and a heating rate of 0.1°C to 100°C/min were used. A small sample (7-12 mg) was weighed with a TGA balance (resolution: 0.1 g; accuracy: to ±0.1%) and heated on a platinum pan. The sample was heated under nitrogen at a sweep rate of 100 ml/min (60 ml/min to the furnace and 40 ml/min to the balance). The sample was equilibrated under nitrogen at 20°C for 20 minutes, then the temperature was raised to 200°C at a rate of 10°C/min and maintained at 200°C for 10 minutes. The temperature was then raised to 425°C at a rate of 10°C/min and maintained at 425°C for 4 hours. Calculate the weight loss during 4 hours at 425°C.

收缩率:薄膜收缩率通过测定加工前后的薄膜厚度来确定。收缩率以原来的薄膜厚度的百分比表示。如果薄膜厚度下降则收缩率为正值。实际厚度一般是用J.A.Woollam M-88分光式椭圆光度仪进行光学测量得到。使用Cauchy模型计算Psi和δ的最佳拟合值(椭圆光度法详细可参见如H.G.Thompkins和William A.McGahan的“Spectroscopic Ellipsometry and Reflectometry”,John Wiley andSons,Inc.,1999年)。 Shrinkage : Film shrinkage is determined by measuring film thickness before and after processing. Shrinkage is expressed as a percentage of original film thickness. The shrinkage is positive if the film thickness decreases. The actual thickness is generally obtained by optical measurement with a JAWollam M-88 spectroscopic ellipsometer. The best-fit values of Psi and δ were calculated using the Cauchy model (for details on ellipsometry, see, eg, "Spectroscopic Ellipsometry and Reflectometry" by HG Thomkins and William A. McGahan, John Wiley and Sons, Inc., 1999).

折光率:折光率的测定与通过J.A.Woollam M-88分光式椭圆光度仪进行的厚度测量同时进行。使用Cauchy模型计算Psi和δ的最佳拟合值。除非另有说明,否则报告的折光率波长为633nm(椭圆光度法详细可参见如H.G.Thompkins和William A.McGahan的“Spectroscopic Ellipsometry and Reflectometry”,John Wiley和Sons,Inc.,1999年)。 Refractive Index : Refractive index was determined simultaneously with thickness measurements by a JA Woollam M-88 Spectroscopic Ellipsometer. Best-fit values of Psi and δ were calculated using the Cauchy model. Unless otherwise stated, the reported refractive index wavelength is 633 nm (for details on ellipsometry see, eg, "Spectroscopic Ellipsometry and Reflectometry" by HG Thomkins and William A. McGahan, John Wiley and Sons, Inc., 1999).

模量和硬度:模量和硬度通过仪器压痕试验、利用MTSNanoindenter XP(MTS Systems Corp.,Oak Ridge,TN)进行测定。具体是采用连续劲度测定方法,该方法能够保证准确、连续测定模量和硬度,而不是从卸载曲线(unloading curves)测定不连续的值。系统用标称模量为72+-3.5GPa的熔凝硅胶进行校正。得到的熔凝硅胶的模量平均值在500至1000nm压痕深度之间。对于薄膜而言,模量和硬度值可从模量对深度曲线的最小值得到,该值一般为薄膜厚度的5至15%。 Modulus and Hardness : Modulus and hardness were determined by instrumented indentation testing using a MTS Nanoindenter XP (MTS Systems Corp., Oak Ridge, TN). Specifically, a continuous stiffness measurement method is used, which ensures accurate, continuous determination of modulus and hardness, rather than discrete values determined from unloading curves. The system is calibrated with fused silica gel with a nominal modulus of 72+-3.5GPa. The obtained fused silica gel has an average modulus between 500 and 1000 nm indentation depth. For films, modulus and hardness values can be obtained from the minimum of the modulus versus depth curve, which is typically 5 to 15% of the film thickness.

胶带实验:胶带实验按照ASTM D3359-95的方法进行。按照如下方法在介电层划出栅格。在按如下方式贴封胶带的栅格上进行胶带实验:(1)将一片粘胶带(优选Scotch牌#3m600-1/2×1296)放在本发明的层上并压紧以便接触良好;和(2)然后将胶带迅速并平滑与层表面形成180°拉起。如果晶片上的层保持完整无缺则认为样品合格,而如果薄膜部分或全部随胶带一起被拉起则认为不合格。 Tape test : The tape test is carried out according to the method of ASTM D3359-95. Draw a grid on the dielectric layer as follows. Tape experiments were performed on grids taped as follows: (1) A piece of adhesive tape (preferably Scotch brand #3m600-1/2 x 1296) was placed over the layer of the invention and pressed down for good contact; And (2) the tape is then quickly and smoothly pulled up 180° from the surface of the layer. The samples were considered pass if the layers on the wafer remained intact, and failed if some or all of the film was pulled up with the tape.

螺栓牵拉试验:将涂覆环氧化物的螺栓拴到具有本发明的层的晶片表面上。将一块陶瓷支承板放于晶片的背面以防止基体弯曲和避免使过度的应力集中在螺栓边缘。然后采用标准拉力规程步骤、通过试验设备将螺栓按垂直于晶片表面的方向牵拉。记录施加应力消失的点和界面位置。 Bolt Pull Test : Epoxy-coated bolts were bolted to the surface of a wafer with a layer of the invention. A ceramic support plate was placed on the backside of the wafer to prevent substrate bowing and to avoid excessive stress concentrations at the stud edges. The bolts are then pulled through the test equipment in a direction perpendicular to the wafer surface using standard pulling procedure procedures. Record the point where the applied stress disappears and the location of the interface.

溶剂相容性:溶剂相容性通过测定溶剂处理前后的膜厚度、折光率、FTIR光谱和介电常数来确定。对于相容的溶剂来讲,不应观察到显著的变化。 Solvent Compatibility : Solvent compatibility was determined by measuring film thickness, refractive index, FTIR spectra, and dielectric constant before and after solvent treatment. For compatible solvents, no significant changes should be observed.

平均孔径测试仪:多孔样品的N2等温线在Micromeretics ASAP2000自动氮气等温吸附测试仪上进行测试,使用UHP(超高纯度工业气体)N2,将样品装入置于77°K的液氮浴中的样品管中。 Average pore size tester : The N 2 isotherm of the porous sample is tested on the Micromeretics ASAP2000 automatic nitrogen isothermal adsorption tester, using UHP (Ultra High Purity Industrial Gas) N 2 , the sample is loaded into a liquid nitrogen bath placed at 77°K in the sample tube.

为制备样品,首先使用标准加工条件将材料沉积在硅晶片上。对于每种样品制备三个膜厚约为6000晶片。随后用薄片刮刀从晶片上刮下薄膜,得到粉末样品。将这些粉末样品在180℃的烘箱中预干燥,随后称重,将粉末小心倒入10mm内径的样品管中,接着在180℃、0.01托下脱气>3小时。To prepare the samples, the material was first deposited on a silicon wafer using standard processing conditions. Three wafers with a film thickness of approximately 6000 Å were prepared for each sample. The film was then scraped off the wafer with a thin blade to obtain a powder sample. These powder samples were pre-dried in an oven at 180°C, then weighed, and the powder was carefully poured into 10mm inner diameter sample tubes, followed by degassing at 180°C, 0.01 Torr for >3 hours.

随后自动测量氮气附着作用的吸附和解吸,平衡间隔为5秒,除非分析显示需要更长的时间。测量等温曲线所需的时间与样品的质量、样品的孔体积、所测试的数据点的数量、平衡间隔以及P/Po容差(P为样品管中样品的实际压力,Po为仪器外环境压力)成正比。仪器测量氮气等温曲线并绘制除氮气-P/Po曲线。Adsorption and desorption of nitrogen attachment were then measured automatically, with an equilibration interval of 5 s unless analysis indicated that a longer time was required. The time required to measure the isotherm curve is related to the mass of the sample, the pore volume of the sample, the number of data points tested, the equilibration interval, and the P/Po tolerance (P is the actual pressure of the sample in the sample tube, Po is the ambient pressure outside the instrument ) is proportional to. The instrument measures the nitrogen isotherm curve and draws the nitrogen removal-P/Po curve.

使用BET理论(S.Brunauer、P.H. Emmett、E.Teller在J.AM.Chem.Soc.,60,309-319(1938)中公开的在固体表面多层气体吸附所用的Brunauer,Emmett,Teller方法),使用BET方程拟合R2>0.9999的线形部分,由氮气吸附等温线的低P/Po区域计算表观BET表面积。Using the BET theory (S.Brunauer, PH Emmett, E.Teller disclosed in J.AM.Chem.Soc., 60,309-319 (1938) used Brunauer, Emmett, Teller method in solid surface multilayer gas adsorption ), the linear portion of R 2 >0.9999 was fitted using the BET equation, and the apparent BET surface area was calculated from the low P/Po region of the nitrogen adsorption isotherm.

由在P/Po的相对压力值通常为~0.95(在等温线的平坦区域,此时已经完成冷凝)下的氮气吸附体积计算孔体积,假设在该P/Po下,吸附的氮气的密度与液态氮气的相同,并且所有的孔均填充了冷凝的氮气。The pore volume was calculated from the nitrogen adsorption volume at a relative pressure value of P/Po typically ~0.95 (in the flat region of the isotherm, at which point condensation has been completed), assuming that at this P/Po the density of the adsorbed nitrogen is the same as Liquid nitrogen is the same, and all holes are filled with condensed nitrogen.

使用BJH理论(E.P.Barret、L.G.Joyner和P.P.Halenda;J.AM.Chem.Soc,73,373-380(1951),使用Kelvin方程,由氮气等温线计算孔径分布),由氮气等温线的吸附线计算孔径分布。这种方法使用了Kelvin方程,该方程阐述曲率与蒸汽压的抑制相关性,还使用了Halsey方程,该方程描述氮气单层厚度与P/Po的关系,将冷凝的氮气的体积与P/Po的关系转化为特定孔径范围内的孔体积。Using the BJH theory (E.P.Barret, L.G.Joyner and P.P.Halenda; J.AM.Chem.Soc, 73, 373-380 (1951), using the Kelvin equation, the pore size distribution is calculated from the nitrogen isotherm), the adsorption line of the nitrogen isotherm Calculate the pore size distribution. This approach uses the Kelvin equation, which describes the suppression dependence of curvature on vapor pressure, and the Halsey equation, which describes the nitrogen monolayer thickness as a function of P/Po, and relates the volume of condensed nitrogen to P/Po The relationship of is converted to pore volume in a specific pore size range.

平均柱状孔径D为柱体的直径,其表观BET表面积Sa(m2/g)和孔体积Vp(cc/g)与样品的相同,因此D(nm)=4000Vp/Sa。The average columnar pore diameter D is the diameter of the column, and its apparent BET surface area Sa (m 2 /g) and pore volume Vp (cc/g) are the same as those of the sample, so D (nm) = 4000Vp/Sa.

热解吸质谱:热解吸质谱(TDMS)通过将材料进行热处理,分析解析物质来测量材料的热稳定性。 Thermal desorption mass spectrometry : Thermal desorption mass spectrometry (TDMS) measures the thermal stability of materials by heat-treating the material and analyzing the desorbed substances.

在装备有晶片加热器和质谱仪的高真空体系进行TDMS测试,其中质谱仪与晶片的前表面接近。使用加热灯对晶片的背面进行加热。通过热电耦测试晶片温度,测试时热电耦与晶片的前表面接触。加热灯和热电耦与可编程的温度控制器相连,该控制器可进行数次温度爬升和均热循环。所用的质谱仪为Hiden Analytical HAL IV RCRGA 301。质谱仪和温度控制器均与计算机连接,计算机读出并记录质谱仪和相应不同时间的温度信号。TDMS tests were performed in a high vacuum system equipped with a wafer heater and a mass spectrometer in close proximity to the front surface of the wafer. Heat lamps are used to heat the backside of the wafer. The die temperature is measured by a thermocouple that is in contact with the front surface of the die. Heater lamps and thermocouples are connected to a programmable temperature controller that performs several temperature ramp and soak cycles. The mass spectrometer used was Hiden Analytical HAL IV RCRGA 301. Both the mass spectrometer and the temperature controller are connected with a computer, and the computer reads out and records the mass spectrometer and corresponding temperature signals at different times.

为进行TDMS分析,首先使用标准加工方法,将材料沉积在8英寸晶片上形成薄膜。随后将晶片置于TDMS真空体系中,用泵对系统抽真空至压力低于1e-7托。使用温度控制器开始温度爬升。使用计算机记录温度和质谱仪信号。对于一般的爬升速率为10℃/min的测量,每20秒记录一次完整的质量扫描和一次温度测量。在测试完成后可分析给定时间的质谱图和给定时间下的温度。For TDMS analysis, the material is first deposited as a thin film on an 8-inch wafer using standard processing methods. Then place the wafer in the TDMS vacuum system, and use a pump to evacuate the system to a pressure lower than 1e-7 Torr. Start the temperature ramp using the temperature controller. Use a computer to record the temperature and mass spectrometer signal. For a typical ramp rate of 10°C/min, a full mass scan and a temperature measurement are recorded every 20 seconds. The mass spectrum at a given time and the temperature at a given time can be analyzed after the test is completed.

实施例Example

对比AContrast A

我们测量了类似于我们的国际专利公开WO 01/78110中实施例5的组合物的介电常数,该值为2.7。We measured the dielectric constant of a composition similar to Example 5 of our International Patent Publication WO 01/78110 and found it to be 2.7.

对比B:Contrast B:

虽然WO 00/31183指出聚丁二烯可用作成孔剂,我们还是尝试通过将聚丁二烯作为成孔剂加入到类似于我们的2002年1月15日提交的待审批的美国专利申请系列号60/350187的发明实施例4-7的组合物中,研究发现无论聚丁二烯的分子量如何,组合物的折射率不发生变化(如下表6所示),因此,无法得到低介电常数的材料。Although WO 00/31183 states that polybutadiene can be used as a porogen, we have tried to use polybutadiene as a porogen in a method similar to our pending U.S. patent application serial number filed on January 15, 2002. In the composition of the inventive examples 4-7 of 60/350187, it was found that regardless of the molecular weight of the polybutadiene, the refractive index of the composition does not change (as shown in Table 6 below), therefore, it is impossible to obtain a low dielectric constant s material.

                                   表6   成孔剂     成孔剂%     增粘剂%     溶剂     折射率   聚丁二烯(Mw1800)     35     6.7     二甲苯     1.629   苯基封端的聚丁二烯(Mw1000)     35     6.7     环己酮     1.623   茚-苯并呋喃共聚物(Mw735)     35     6.7     环己酮     1.602   茚-苯并呋喃共聚物(Mw735)     35     6.7     二甲苯     1.607   茚-苯并呋喃共聚物(Mw1090)     35     6.7     环己酮     1.600   茚-苯并呋喃共聚物(Mw1090)     35     6.7     二甲苯     1.595 Table 6 Pore former Pore former% Tackifier% solvent Refractive index Polybutadiene (Mw1800) 35 6.7 Xylene 1.629 Phenyl-terminated polybutadiene (Mw1000) 35 6.7 Cyclohexanone 1.623 Indene-benzofuran copolymer (Mw735) 35 6.7 Cyclohexanone 1.602 Indene-benzofuran copolymer (Mw735) 35 6.7 Xylene 1.607 Indene-benzofuran copolymer (Mw1090) 35 6.7 Cyclohexanone 1.600 Indene-benzofuran copolymer (Mw1090) 35 6.7 Xylene 1.595

制备:preparation:

制备1-热固性组分(a)的制备Preparation 1 - Preparation of thermosetting component (a)

(这里称为“P1”)(referred to here as "P1")

步骤(a):制备1,3,5,7-四(3′/4′-溴苯基)C10金刚烷(如图1A所示)、1,3/4-双[1′,3′,5′-三(3″/4″-溴苯基)C10金刚烷-7′-基]苯(如图1C所示)和至少1,3-双{3′/4′-[1″,3″,5″-三(3/4-溴苯基)C10金刚烷-7″-基]苯基}-5,7-双-(3″″/4″″-溴苯基)C10金刚烷(如图1C所示)的混合物(总的称为“P1步骤(a)产物”)。Step (a): Preparation of 1,3,5,7-tetrakis(3′/4′-bromophenyl)C 10 adamantane (as shown in Figure 1A), 1,3/4-bis[1′,3 ',5'-tris(3"/4"-bromophenyl)C 10 adamantan-7'-yl]benzene (as shown in Figure 1C) and at least 1,3-bis{3'/4'-[ 1″, 3″, 5″-tris(3/4-bromophenyl)C 10 adamantane-7″-yl]phenyl}-5,7-bis-(3″″/4″″- Bromophenyl) C 10 adamantane (as shown in Figure 1C) mixture (collectively referred to as "P1 step (a) product").

将C10金刚烷(200克)、溴苯(1550毫升)和三氯化铝(50克)加至第一反应器中。反应混合物用恒温水浴加热至40℃。将叔丁基溴(1206克)在4-6小时内缓慢加入至反应混合物中。将反应混合物在40℃下搅拌过夜。C 10 adamantane (200 g), bromobenzene (1550 mL) and aluminum trichloride (50 g) were added to the first reactor. The reaction mixture was heated to 40°C with a constant temperature water bath. Tert-butyl bromide (1206 g) was slowly added to the reaction mixture over 4-6 hours. The reaction mixture was stirred overnight at 40 °C.

将氯化氢水溶液(5%重量)1000毫升加至第二反应器中。将第一反应器中的反应物逐渐倒入第二反应器中,同时通过外部冰浴维持反应混合物的温度为25-35℃。分离有机相(呈深褐色,在底层)并用水(1000毫升)洗涤。剩下的有机相约有1700毫升。1000 ml of aqueous hydrogen chloride solution (5% by weight) was added to the second reactor. The reactants in the first reactor were gradually poured into the second reactor while maintaining the temperature of the reaction mixture at 25-35°C by an external ice bath. The organic phase (dark brown, bottom layer) was separated and washed with water (1000 mL). About 1700 ml of organic phase remained.

将20.4升的石油醚(主要为沸程为80℃-110℃的异辛烷)加至第三反应器中。在1小时内将第二反应器中的反应物缓慢倒入第三反应器中。搅拌得到的混合物至少1小时。沉淀过滤并且用前述石油醚洗涤滤饼两次,每次300毫升。洗过的滤饼在40毫巴压力、45℃下干燥过夜。该P1步骤(a)得到的产物干重为407克。该反应如下图1A至1C所示。图1A显示了所得的单体。图1B表示所得的二聚体和较高级产物的通式而图1C表示得到的具体二聚体和三聚体,它们包括在图1B结构的范围内。20.4 liters of petroleum ether (mainly isooctane with a boiling range of 80°C-110°C) was added to the third reactor. The reactants in the second reactor were slowly poured into the third reactor over 1 hour. The resulting mixture was stirred for at least 1 hour. The precipitate was filtered and the filter cake was washed twice with 300 ml of the aforementioned petroleum ether. The washed filter cake was dried overnight at a pressure of 40 mbar at 45°C. The dry weight of the product obtained in the P1 step (a) was 407 grams. This reaction is shown in Figures 1A to 1C below. Figure 1A shows the resulting monomer. Figure 1B shows the general formula of the resulting dimers and higher order products and Figure 1C shows the specific dimers and trimers that are obtained, which are included within the structure of Figure 1B.

使用包括LC-MS、NMR 13C和GPC的分析技术鉴定产物。LC-MS表明产物为具有C10金刚烷核的星形化合物单体和低聚物的复杂混合物。确定的结构在下表中列出(Ad=C10金刚烷;Ph=C6H5;Br=溴;t-Bu=-C(CH3)3):Products were identified using analytical techniques including LC-MS, NMR13C and GPC. LC-MS indicated that the product was a complex mixture of star compound monomers and oligomers with a C 10 adamantane core. The determined structures are listed in the table below (Ad = C 10 adamantane; Ph = C 6 H 5 ; Br = bromine; t-Bu = -C(CH 3 ) 3 ):

IE1步骤(a)产物的HPLC-MS分析HPLC-MS analysis of IE1 step (a) product

Figure A0380593801041
Figure A0380593801041

NMR 13C分析如下峰的归属:   13C NMR峰位,ppm 结构   153.6,151.8,151.1,148.3,147.6 键合到C10金刚烷的季芳碳   136.0,134.5,134.2,133.1,131.6,131.1,130.2,130.0,129.6,129.3,128.5,126.9,123.8 芳族C-H   123.1,123.0,122.9,122.6,121.4,121.1,120.3 芳族C-Br   47.7 三取代的C10金刚烷的三个C-H2   46.8 四取代的C10金刚烷的C-H2   41.0 与未取代C10金刚烷位置相邻的C10金刚烷的C-H2   39.3,39.0,38.9,38.4,38.1 C10金刚烷的季(脂族)碳   35.2 叔丁基的季(脂族)碳   31.4 叔丁基的C-H3   30 三取代的C10金刚烷的C-H NMR 13 C analyzes the attribution of the following peaks: 13 C NMR peak position, ppm structure 153.6, 151.8, 151.1, 148.3, 147.6 Bonded to the quaternary carbon of C10 adamantane 136.0, 134.5, 134.2, 133.1, 131.6, 131.1, 130.2, 130.0, 129.6, 129.3, 128.5, 126.9, 123.8 Aromatic CH 123.1, 123.0, 122.9, 122.6, 121.4, 121.1, 120.3 Aromatic C-Br 47.7 Three CH 2 of trisubstituted C 10 adamantane 46.8 CH 2 of tetrasubstituted C 10 adamantane 41.0 CH2 of a C10 adamantane adjacent to an unsubstituted C10 adamantane position 39.3, 39.0, 38.9, 38.4, 38.1 Quaternary (aliphatic) carbon of C 10 adamantane 35.2 quaternary (aliphatic) carbon of tert-butyl 31.4 tert-butyl CH 3 30 CH of trisubstituted C 10 adamantane

GPC解析结果: GPC analysis results:

-1,3,5,7-四(3′/4′-溴苯基)C10金刚烷(如图3A所示)的峰位分子量约为360;-1,3,5,7-Tetrakis(3'/4'-bromophenyl) C 10 adamantane (as shown in Figure 3A) has a peak molecular weight of about 360;

-1,3/4-双[1′,3′,5′-三(3″/4″-溴苯基)C10金刚烷-7′-基]苯(如图3C所示)的峰位分子量约为620;-1,3/4-bis[1′,3′,5′-tris(3″/4″-bromophenyl) C 10 adamantane-7′-yl]benzene (as shown in Figure 3C) The molecular weight is about 620;

-1,3-双{3′/4′-[1″,3″,5″-三(3/4-溴苯基)C10金刚烷-7″-基]苯基}-5,7-双(3″″/4″″-溴苯基)C10金刚烷(如图3C所示)的峰位分子量约为900(肩峰)。-1,3-bis{3′/4′-[1″,3″,5″-tris(3/4-bromophenyl)C 10 adamantane-7″-yl]phenyl}-5 , the peak molecular weight of 7-bis(3″″/4″″-bromophenyl) C 10 adamantane (as shown in FIG. 3C ) is about 900 (shoulder peak).

步骤(b):制备1,3,5,7-四[3′,4′-(苯乙炔基)苯基]C10金刚烷(如图1D所示)、1,3/4-双{1′,3′ 5′-三[3″/4″-(苯乙炔基)苯基]C10金刚烷7′-基}苯(如图1F所示)和至少1,3-双{3′/4′-[1″,3″,5″-三[3/4-(苯乙炔基)苯基]C10金刚烷-7″-基]苯基}-5,7-双[3″″/4″″-(苯乙炔基)苯基]C10金刚烷(如图1F所示)的混合物(总称为“P1步骤(b)产物”)。Step (b): Preparation of 1,3,5,7-tetrakis[3′,4′-(phenylethynyl)phenyl]C 10 adamantane (as shown in Figure 1D), 1,3/4-bis{ 1′,3′ 5′-tris[3″/4″-(phenylethynyl)phenyl]C 10 adamantane 7′-yl}benzene (as shown in Figure 1F) and at least 1,3-bis{3 ′/4′-[1″, 3″, 5″-tri[3/4-(phenylethynyl)phenyl]C 10 adamantane-7″-yl]phenyl}-5,7-bis A mixture of [3""/4""-(phenylethynyl)phenyl]C 10 adamantanes (as shown in Figure 1F) (collectively referred to as "P1 step (b) products").

在氮气保护下,将甲苯(1500毫升)、三乙胺(4000毫升)和上述P1步骤(a)制备的产物(1000克,干重)加入至第一反应器中。将混合物加热至80℃,加入二氯化双-(三苯基膦)合钯(II)(即[Ph3P]2PdCl2)(7.5克)和三苯基膦(即[Ph3P])(15克)。10分钟后,加入碘化亚铜(I)(7.5克)。Under nitrogen protection, toluene (1500 ml), triethylamine (4000 ml) and the product prepared in step (a) of P1 above (1000 g, dry weight) were added to the first reactor. The mixture was heated to 80°C, bis-(triphenylphosphine)palladium(II) dichloride (ie [Ph 3 P] 2 PdCl 2 ) (7.5 g) and triphenylphosphine (ie [Ph 3 P ]) (15 grams). After 10 minutes, copper (I) iodide (7.5 g) was added.

在3小时内,将苯乙炔(750克)溶液加入至第一反应器中。在80℃下搅拌反应混合物12小时以确保反应完全。加入甲苯(4750毫升)。在最高容器内温下减压蒸馏溶剂,将反应混合物冷却至约50℃。过滤出溴化三乙基铵(约1600毫升)。滤饼用甲苯洗涤3次,每次500毫升。有机相用1750毫升HCl(10%重量)洗涤,然后再用水(2000毫升)洗涤。A solution of phenylacetylene (750 grams) was added to the first reactor over 3 hours. The reaction mixture was stirred at 80°C for 12 hours to ensure completion of the reaction. Toluene (4750 mL) was added. The solvent was distilled off under reduced pressure at the highest internal vessel temperature and the reaction mixture was cooled to about 50°C. Triethylammonium bromide (about 1600 mL) was filtered off. The filter cake was washed 3 times with 500 ml of toluene. The organic phase was washed with 1750 ml of HCl (10% by weight) and then with water (2000 ml).

将水(1000毫升)、乙二胺四乙酸(EDTA)(100克)和丁二酮肟(20克)加入至洗过的有机相中。加入约150毫升MH4OH(25%重量)溶液以使pH为9。搅拌反应混合物1小时。分离有机相并用水(1000毫升)洗涤。通过Dean-Stark分水器进行共沸干燥直至水分停止挥发。加入过滤剂白云石(100克)(商品名Tonsil)。将混合物在100℃下加热30分钟。用带有细孔的滤布过滤出白云石并用甲苯(200毫升)洗涤残留物。加入二氧化硅(100克)。搅拌反应混合物30分钟。用带有细孔的滤布过滤出二氧化硅并用甲苯(200毫升)洗涤残留物。加入氨水溶液(20%重量)2500毫升和12.5克N-乙酰半胱氨酸。分离各相。有机相用1000毫升HCl(10%重量)洗涤,然后用水洗涤2次,每次1000毫升。在约120毫巴压力下减压蒸馏出甲苯。反应器内温不超过约70℃。残留物为深褐色粘稠油状物(1500-1700毫升)。向反应器内的热反应物中加入乙酸异丁酯(2500毫升),形成深褐色溶液(4250毫升)。Water (1000 mL), ethylenediaminetetraacetic acid (EDTA) (100 g) and dimethylglyoxime (20 g) were added to the washed organic phase. About 150 mL of MH4OH (25% by weight) solution was added to bring the pH to 9. The reaction mixture was stirred for 1 hour. The organic phase was separated and washed with water (1000 mL). Azeotropic drying was performed through a Dean-Stark trap until the moisture ceased to evaporate. A filter dolomite (100 g) (trade name Tonsil) was added. The mixture was heated at 100°C for 30 minutes. The dolomite was filtered off with a fine filter cloth and the residue was washed with toluene (200 ml). Silica (100 g) was added. The reaction mixture was stirred for 30 minutes. The silica was filtered off with a fine-mesh filter cloth and the residue was washed with toluene (200 ml). 2500 ml of ammonia solution (20% by weight) and 12.5 g of N-acetylcysteine were added. The phases were separated. The organic phase was washed with 1000 ml of HCl (10% by weight) and then twice with 1000 ml of water. Toluene was distilled off under reduced pressure at a pressure of about 120 mbar. The internal temperature of the reactor did not exceed about 70°C. The residue was a dark brown viscous oil (1500-1700 mL). To the hot reaction in the reactor was added isobutyl acetate (2500 mL), resulting in a dark brown solution (4250 mL).

将17000毫升石油醚(主要为沸程80℃-110℃的异辛烷)加至第二反应器中。将第一反应器中的反应物在1小时内加至第二反应器中并且搅拌过夜。过滤沉淀并且用前述石油醚洗涤4次,每次500毫升。产物在45℃下减压干燥4小时和在80℃下减压干燥5小时。P1步骤(B)得到产物850-900克。该反应如下图1D至1F所示。图1D表示得到的单体。图1E表示得到的二聚体和较高级产物的通式,而图1F表示得到的具体二聚体和三聚体,包括在图1F的结构中。17000 ml of petroleum ether (mainly isooctane with a boiling range of 80°C-110°C) was added to the second reactor. The contents of the first reactor were added to the second reactor over 1 hour and stirred overnight. The precipitate was filtered and washed 4 times with 500 ml of the aforementioned petroleum ether. The product was dried under reduced pressure at 45°C for 4 hours and at 80°C for 5 hours. P1 step (B) yields 850-900 grams of product. This reaction is shown in Figures 1D to 1F below. Figure 1D shows the resulting monomer. Figure IE shows the general formulas of the resulting dimers and higher order products, while Figure IF shows the specific dimers and trimers that are obtained, included in the structure of Figure IF.

使用包括LC-MS、NMR 1H、NMR 13C、GPC和FTIR的分析技术鉴定产物。Products were identified using analytical techniques including LC-MS, NMR1H , NMR13C , GPC and FTIR.

LC-MS分析表明产物是具有C10金刚烷核的星形化合物单体和低聚物的复杂混合物。确定的结构在下表中列出(Ad=笼形C10金刚烷;T为二苯乙炔基-PhC≡CC6H4-;t-Bu=-C(CH3)3): LC-MS analysis indicated that the product was a complex mixture of star compound monomers and oligomers with a C 10 adamantane core. The determined structures are listed in the table below (Ad = clathrate C 10 adamantane; T is tolanyl-PhC≡CC 6 H 4 -; t-Bu = -C(CH 3 ) 3 ):

  # #     M+峰 M+ peak     推断结构 Inferred structure   1a 1 a     664 664     AdT3HAdT 3 H   2a 2a     840 840     AdT4 AdT 4   3a 3a     720 720     Ad(H)T3(t-Bu)Ad(H)T 3 (t-Bu)   4a,b 4 a, b     896 896     AdT4(t-Bu) AdT4 (t-Bu)   5a,b 5 a, b     1326 1326     Ad2T6 Ad 2 T 6   6a,b 6a ,b     1402 1402     Ad2T6(C6H4)Ad 2 T 6 (C 6 H 4 )

a所有这些通用结构均观察到具有MW±100a.u.(加或减PhC≡C-基团)的类似物 a All of these general structures were observed for analogs with MW ± 100 a.u. (plus or minus PhC≡C-group)

b这些结构均观察到不含二苯乙炔基支链(-176a.u.)的类似物 b These structures are all observed analogues without the tolanyl branch (-176a.u.)

1H NMR确定芳族质子(6.9-8ppm,2.80±0.2H)和笼形C10金刚烷质子(1.7-2.7ppm,1±0.2H)。 1 H NMR identified aromatic protons (6.9-8 ppm, 2.80±0.2H) and caged C10 adamantane protons (1.7-2.7 ppm, 1±0.2H).

13C NMR分析如下峰的归属:     13CNMR峰位,ppm 结构     151.3,151,150,149.9,149.8,149.3,149.2 连接C10金刚烷环上的季芳碳     132-131,128.5,125.3,125.2 C-H芳碳     129.6-129.1 芳环碳     123.7-122.9,121.8,121.1,120.9 连接在乙炔上的季芳碳     93.6 季乙炔碳(在二取代环上)     90.7,90.3,90.1,89.7,89.5,89.4,89.1,88.8,88.7 季乙炔碳     47.5,46.7 四取代C10金刚烷的C-H2     47.1 四取代C10金刚烷的C-H3     41 三取代C10金刚烷的C-H2     39.6 三取代C10金刚烷的C-H3     39.5,39.2-39.0,38.6,38.2,35 四取代C10金刚烷的季碳     32 芳环上叔丁基的C-H3     30 三取代C10金刚烷的C-H 13 C NMR analyzes the attribution of the following peaks: 13CNMR peak position, ppm structure 151.3, 151, 150, 149.9, 149.8, 149.3, 149.2 Connect the quaternary carbon on the C 10 adamantane ring 132-131, 128.5, 125.3, 125.2 CH aromatic carbon 129.6-129.1 Aromatic ring carbon 123.7-122.9, 121.8, 121.1, 120.9 quaternary carbon attached to acetylene 93.6 quaternary acetylene carbon (on disubstituted ring) 90.7, 90.3, 90.1, 89.7, 89.5, 89.4, 89.1, 88.8, 88.7 quaternary acetylene carbon 47.5, 46.7 CH2 of tetrasubstituted C10 adamantane 47.1 CH3 of tetrasubstituted C10 adamantane 41 CH2 of trisubstituted C10 adamantane 39.6 CH3 of trisubstituted C10 adamantane 39.5, 39.2-39.0, 38.6, 38.2, 35 Quaternary carbon of tetrasubstituted C 10 adamantane 32 CH 3 of the tert-butyl group on the aromatic ring 30 CH of trisubstituted C 10 adamantane

GPC分析结果: GPC analysis results:

-1,3,5,7-四[3′/4′-(苯乙炔基)苯基]C10金刚烷(如图3D所示)的峰位分子量约为744;-1,3,5,7-Tetrakis[3'/4'-(phenylethynyl)phenyl]C 10 adamantane (as shown in Figure 3D) has a peak molecular weight of about 744;

-1,3/4-双{1′,3′,5′-三[3″/4″-(苯乙炔基)苯基]C10金刚烷-7′-基}苯(如图3F所示)的峰位分子量约为1300;-1,3/4-bis{1′,3′,5′-tri[3″/4″-(phenylethynyl)phenyl]C 10 adamantane-7′-yl}benzene (as shown in Figure 3F Shown) the peak molecular weight is about 1300;

-1,3-双-{3′/4′-[1″,3″,5″-三[3/4-(苯乙炔基)苯基]C10金刚烷-7″-基]苯基}-5,7-双(3″″/4″″-(苯乙炔基)苯基]C10金刚烷(如图3F所示)的峰位分子量约为1680(肩峰)。-1,3-bis-{3′/4′-[1″,3″,5″-tri[3/4-(phenylethynyl)phenyl]C 10 adamantane-7″-yl] The peak molecular weight of phenyl}-5,7-bis(3″″/4″″-(phenylethynyl)phenyl]C 10 adamantane (shown in FIG. 3F ) is about 1680 (shoulder peak).

根据GPC结果,单体和小分子与低聚物的比例为50±5%。According to the GPC results, the ratio of monomers and small molecules to oligomers was 50±5%.

FTIR结果如下:     峰位cm-1(峰强度)     结构     3050(弱)     芳族C-H     2930(弱)     C10金刚烷上的脂族C-H     2200(非常弱)     乙炔     1600(非常强)     芳族C=C     1500(强)     1450(中等)     1350(中等) FTIR results are as follows: Peak position cm -1 (peak intensity) structure 3050 (weak) Aromatic CH 2930 (weak) Aliphatic CH on C10 adamantane 2200 (very weak) Acetylene 1600 (very strong) Aromatic C=C 1500(Strong) 1450 (medium) 1350 (medium)

制备2-热固性组分的制备Preparation 2 - Preparation of thermosetting components

(这里称为“P2”)(referred to here as "P2")

步骤(a):制备1,3,5,7-四(3′/4′-溴苯基)C10金刚烷(如图1A所示)、1,3/4-双[1′,3′,5′-三(3″/4″-溴苯基)C10金刚烷-7′-基]苯(如图1C所示)和至少1,3-双{3′/4′-[1″,3″,5″-三(3/4-溴苯基)C10金刚烷-7″-基]苯基}-5,7-双(3″″/4″″-溴苯基)C10金刚烷(如图1C所示)的混合物(总称为“P2步骤(a)产物”)。Step (a): Preparation of 1,3,5,7-tetrakis(3′/4′-bromophenyl)C 10 adamantane (as shown in Figure 1A), 1,3/4-bis[1′,3 ',5'-tris(3"/4"-bromophenyl)C 10 adamantan-7'-yl]benzene (as shown in Figure 1C) and at least 1,3-bis{3'/4'-[ 1″, 3″, 5″-tris(3/4-bromophenyl)C 10 adamantane-7″-yl]phenyl}-5,7-bis(3″″/4″″-bromo phenyl) C 10 adamantanes (as shown in Figure 1C) (collectively referred to as "P2 step (a) products").

将1,4-二溴苯(587.4克)和三氯化铝(27.7克)加至第一反应器中。反应混合物通过恒温水浴加热至90℃并在此温度下不加搅拌维持1小时,然后再搅拌1小时。将反应混合物冷却至50℃。将C10金刚烷(113.1克)加至所述冷却的反应混合物中。在4小时内将叔丁基溴苯(796.3克)加至反应混合物中。再将反应混合物搅拌12小时。1,4-Dibromobenzene (587.4 grams) and aluminum trichloride (27.7 grams) were charged to the first reactor. The reaction mixture was heated to 90°C by means of a constant temperature water bath and maintained at this temperature without stirring for 1 hour, and then stirred for another 1 hour. The reaction mixture was cooled to 50 °C. C 10 adamantane (113.1 g) was added to the cooled reaction mixture. Tert-butylbromobenzene (796.3 g) was added to the reaction mixture over 4 hours. The reaction mixture was stirred for an additional 12 hours.

将HCl溶液(566毫升,10%重量水溶液)加入至第二反应器中。将第一反应器中的反应物在50℃下转移至第二反应器中,通过外部冰浴维持混合物温度为25-35℃。反应物为淡褐色悬浮液。有机相在下层,呈深褐色,将其从反应混合物中分离出来。分离的有机相用水(380毫升)洗涤。洗涤后,剩余有机相约800毫升。HCl solution (566 mL, 10% by weight in water) was added to the second reactor. The contents of the first reactor were transferred to the second reactor at 50°C, maintaining the mixture temperature at 25-35°C by an external ice bath. The reactant was a light brown suspension. The lower organic phase was dark brown and was separated from the reaction mixture. The separated organic phase was washed with water (380 mL). After washing, about 800 ml of organic phase remained.

将庚烷(5600毫升)加入至第三反应器中。在1小时内将第二反应器中的反应物缓慢加入至第三反应器中。将悬浮液搅拌至少4小时然后过滤出沉淀。滤饼用庚烷洗涤2次,每次300毫升。得到P2步骤(a)的产物526.9克(湿重)和470.1克(干重)。Heptane (5600 mL) was charged to the third reactor. The reactants in the second reactor were slowly added to the third reactor over 1 hour. The suspension was stirred for at least 4 hours and the precipitate was filtered off. The filter cake was washed twice with 300 ml of heptane. 526.9 g (wet weight) and 470.1 g (dry weight) of the product of P2 step (a) were obtained.

使用包括LC-MS、NMR13C和GPC的分析技术确定产物。LC-MS分析结果表明产物是具有C10金刚烷核的星形化合物单体和低聚物的复杂混合物。确定的结构在下表中列出(Ad=C10金刚烷;Ph=C6H5;Br=溴;t-Bu=-C(CH3)3):Products were identified using analytical techniques including LC-MS, NMR13C and GPC. LC-MS analysis results indicated that the product was a complex mixture of star compound monomers and oligomers with a C 10 adamantane nucleus. The determined structures are listed in the table below (Ad = C 10 adamantane; Ph = C 6 H 5 ; Br = bromine; t-Bu = -C(CH 3 ) 3 ):

IE2步骤(a)产物的HPLC-MS分析HPLC-MS analysis of IE2 step (a) product

NMR13C分析如下峰的归属:   13C NMR峰位,ppm 结构   153.6,151.8,151.1,148.3,147.6 键合至C10金刚烷的季芳碳   136.0,134.5,134.2,133.1,131.6,131.1,130.2,130.0,129.6,129.3,128.5,126.9,123.8 芳族C-H   123.1,123.0,122.9,122.6,121.4,121.1,120.3 芳族C-Br   47.7 三取代的C10金刚烷的三个C-H2   46.8 四取代的C10金刚烷的C-H2   41.0 与未取代C10金刚烷位置邻近的C10金刚烷的C-H2   39.3,39.0,38.9,38.4,38.1 C10金刚烷的季(脂族)碳   35.2 叔丁基的季(脂族)碳   31.4 叔丁基的C-H3   30 三取代的C10金刚烷的C-H NMR 13 C analyzes the attribution of the following peaks: 13 C NMR peak position, ppm structure 153.6, 151.8, 151.1, 148.3, 147.6 Bonded to quaternary carbon of C10 adamantane 136.0, 134.5, 134.2, 133.1, 131.6, 131.1, 130.2, 130.0, 129.6, 129.3, 128.5, 126.9, 123.8 Aromatic CH 123.1, 123.0, 122.9, 122.6, 121.4, 121.1, 120.3 Aromatic C-Br 47.7 Three CH 2 of trisubstituted C 10 adamantane 46.8 CH 2 of tetrasubstituted C 10 adamantane 41.0 CH2 of a C10 adamantane adjacent to an unsubstituted C10 adamantane position 39.3, 39.0, 38.9, 38.4, 38.1 Quaternary (aliphatic) carbon of C 10 adamantane 35.2 quaternary (aliphatic) carbon of tert-butyl 31.4 tert-butyl CH 3 30 CH of trisubstituted C 10 adamantane

GPC解析结果: GPC analysis results:

-1,3,5,7-四(3′/4′-溴苯基)C10金刚烷(如图3A所示)的峰位分子量约为360;-1,3,5,7-Tetrakis(3'/4'-bromophenyl) C 10 adamantane (as shown in Figure 3A) has a peak molecular weight of about 360;

-1,3/4-双[1′,3′,5′-三(3″/4″-溴苯基)C10金刚烷-7′-基]苯(如图3C所示)的峰位分子量约为570;-1,3/4-bis[1′,3′,5′-tris(3″/4″-bromophenyl) C 10 adamantane-7′-yl]benzene (as shown in Figure 3C) The molecular weight is about 570;

-1,3-双(3′/4′-[1″,3″,5″-三(3″/4-溴苯基)C10金刚烷-7″-基]苯基}-5,7-双(3″″/4″″-溴苯基)C10金刚烷(如图3C所示)的峰位分子量约为860(肩峰)。-1,3-bis(3′/4′-[1″,3″,5″-tris(3″/4-bromophenyl)C 10 adamantane-7″-yl]phenyl}-5 , the peak molecular weight of 7-bis(3″″/4″″-bromophenyl) C 10 adamantane (as shown in FIG. 3C ) is about 860 (shoulder peak).

步骤(b):制备1,3,5,7-四[3′,4′-(苯乙炔基)苯基]C10金刚烷(如图1D所示)、1,3/4-双{1′,3′,5′-三[3″/4″-(苯乙炔基)苯基]C10金刚烷-7′-基}苯(如图1F所示)和至少1,3-双{3′/4′-[1″,3″,5″-三[3/4-(苯乙炔基)苯基]C10金刚烷-7″-基]苯基}-5,7-双[3″″/4″″-(苯乙炔基)苯基]C10金刚烷(如图1F所示)的混合物(总称为“P2步骤(b)产物”)。Step (b): Preparation of 1,3,5,7-tetrakis[3′,4′-(phenylethynyl)phenyl]C 10 adamantane (as shown in Figure 1D), 1,3/4-bis{ 1′,3′,5′-tris[3″/4″-(phenylethynyl)phenyl]C 10 adamantane-7′-yl}benzene (as shown in Figure 1F) and at least 1,3-bis {3′/4′-[1″, 3″, 5″-tri[3/4-(phenylethynyl)phenyl]C 10 adamantane-7″-yl]phenyl}-5,7 - Mixtures of bis[3""/4""-(phenylethynyl)phenyl]C 10 adamantanes (as shown in Figure 1F) (collectively referred to as "P2 step (b) products").

在氮气保护下,将甲苯(698毫升)、三乙胺(1860毫升)和上述制备的P2步骤(a)产物(465克,干重)加入至第一反应器中。将混合物加热至80℃。将钯-三苯基膦络合物(即[Ph(PPh3)2Cl2)(4.2克)加至反应混合物中。等待10分钟后,将三苯基膦(即PPh3)(8.4克)加至反应混合物中。再等待10分钟后,将碘化亚铜(I)(4.2克)加至反应混合物中。Under nitrogen protection, toluene (698 ml), triethylamine (1860 ml) and the product of P2 step (a) prepared above (465 g, dry weight) were added to the first reactor. The mixture was heated to 80°C. Palladium-triphenylphosphine complex (ie [Ph(PPh 3 ) 2 Cl 2 ) (4.2 g) was added to the reaction mixture. After waiting 10 minutes, triphenylphosphine (ie, PPh3 ) (8.4 g) was added to the reaction mixture. After waiting another 10 minutes, copper (I) iodide (4.2 g) was added to the reaction mixture.

在3小时内,将苯乙炔溶液(348.8克)加至反应混合物中。将反应混合物在80℃下搅拌12小时以确保反应完成。将甲苯(2209毫升)加至反应混合物中,然后在最高反应器温度下减压蒸馏。将反应混合物冷却至约50℃,并滤出溴化三乙基铵。滤饼用甲苯洗涤2次,每次250毫升。有机相用HCl(10%重量)(500毫升)和水(500毫升)洗涤。Phenylacetylene solution (348.8 g) was added to the reaction mixture over 3 hours. The reaction mixture was stirred at 80 °C for 12 hours to ensure completion of the reaction. Toluene (2209 mL) was added to the reaction mixture, which was then distilled under reduced pressure at maximum reactor temperature. The reaction mixture was cooled to about 50°C, and triethylammonium bromide was filtered off. The filter cake was washed twice with 250 ml of toluene. The organic phase was washed with HCl (10 wt%) (500 mL) and water (500 mL).

将水(500毫升)、EDTA(18.6克)和丁二酮肟(3.7克)加至有机相中。加入NH4OH(25%重量)(约93毫升)以保持pH=9。搅拌反应混合物1小时。将有机相自不溶的物质和含钯络合物的乳状液中分离出来。分离出的有机相用水(500毫升)洗涤。通过Dean-Stark分水器,将洗涤过的有机相进行共沸干燥直至水分挥发终止。加入过滤剂白云石(商品名Tonsil)(50克),将反应混合物在100℃下加热30分钟。用具有细孔的滤布过滤出白云石,用甲苯(200毫升)洗涤有机物质。加入二氧化硅(50克)并搅拌反应化合物30分钟。用具有细孔的滤布过滤出二氧化硅,用甲苯(200毫升)洗涤有机物质。加入NH3水溶液(20%重量)(250毫升)和N-乙酰半胱氨酸(12.5克)。分离各相。有机相用HCl(10%重量)(500毫升)洗涤。有机物质用水洗涤2次,每次500毫升。在约120毫巴的压力下减压蒸馏出甲苯。反应器温度不超过70℃。剩下深褐色粘稠油状物(约500-700毫升)。向反应器内的热物质中加入乙酸异丁酯(1162毫升),形成深褐色溶液(约1780毫升)。Water (500 mL), EDTA (18.6 g) and dimethylglyoxime (3.7 g) were added to the organic phase. NH4OH (25% by weight) (about 93 mL) was added to maintain pH=9. The reaction mixture was stirred for 1 hour. The organic phase is separated from the insoluble material and the palladium complex-containing emulsion. The separated organic phase was washed with water (500 mL). The washed organic phase was azeotropically dried through a Dean-Stark trap until the water evaporated. A filter agent dolomite (trade name Tonsil) (50 g) was added and the reaction mixture was heated at 100° C. for 30 minutes. The dolomite was filtered out with a filter cloth having fine pores, and the organic matter was washed with toluene (200 ml). Silica (50 g) was added and the reaction mixture was stirred for 30 minutes. Silica was filtered out with a filter cloth having fine pores, and the organic matter was washed with toluene (200 ml). Aqueous NH 3 (20% by weight) (250 mL) and N-acetylcysteine (12.5 g) were added. The phases were separated. The organic phase was washed with HCl (10% by weight) (500 mL). The organic matter was washed twice with 500 ml of water. Toluene was distilled off under reduced pressure at a pressure of about 120 mbar. The reactor temperature does not exceed 70°C. A dark brown viscous oil (ca. 500-700 mL) remained. To the hot mass in the reactor was added isobutyl acetate (1162 mL), resulting in a dark brown solution (ca. 1780 mL).

将庚烷(7120毫升)加至第二反应器中。在1小时内,将第一反应器中的反应物加入至第二反应器中。搅拌沉淀至少3小时并过滤。产物用庚烷洗涤4次,每次250毫升。在40毫巴压力、80℃下减压干燥产物。得到P2步骤(b)的产物700克(湿重)或419克(干重)。Heptane (7120 mL) was charged to the second reactor. The reactants in the first reactor were added to the second reactor over 1 hour. The precipitate was stirred for at least 3 hours and filtered. The product was washed 4 times with 250 ml of heptane. The product was dried under reduced pressure at 40 mbar pressure at 80°C. 700 g (wet weight) or 419 g (dry weight) of the product of P2 step (b) were obtained.

使用包括LC-MS、NMR 1H、NMR 13C、GPC和FTIR的分析技术鉴定产物。Products were identified using analytical techniques including LC-MS, NMR1H , NMR13C , GPC and FTIR.

LC-MS分析结果表明产物是具有C10金刚烷核的星形化合物单体和低聚物的复杂混合物。确定的结构在下表中列出(Ad=笼形C10金刚烷;T为二苯乙炔基-PhC≡CC6H4-;t-Bu=-C(CH3)3):LC-MS analysis results indicated that the product was a complex mixture of star compound monomers and oligomers with a C 10 adamantane nucleus. The determined structures are listed in the following table (Ad = clathrate C 10 adamantane; T is tolanyl-PhC≡CC 6 H 4 -; t-Bu = -C(CH 3 ) 3 ):

    # #     M+峰 M+ peak     推断结构 Inferred structure     1a 1 a     664 664     AdT3HAdT 3 H     2a 2a     840 840     AdT4 AdT 4     3a 3a     720 720     Ad(H)T3(t-Bu)Ad(H)T 3 (t-Bu)     4a,b 4 a, b     896 896     AdT4(t-Bu) AdT4 (t-Bu)     5a,b 5 a, b     1326 1326     Ad2T6 Ad2T 6     6a,b 6a ,b     1402 1402     Ad2T6(C6H4)Ad 2 T 6 (C 6 H 4 )

a所有这些通用结构均观察到具有MW±100a.u.(加或减PhC≡C-基团)的类似物 a All of these general structures are observed for analogs with MW ± 100 a.u. (plus or minus PhC≡C-group)

b这些结构均观察到不含二苯乙炔基支链(-176a.u.)的类似物 b These structures are all observed analogues without the tolanyl branch (-176a.u.)

1H NMR确定芳族质子(6.9-8ppm,2.80±0.2H)和笼形C10金刚烷质子(1.7-2.7ppm,1±0.2H)。 1 H NMR identified aromatic protons (6.9-8 ppm, 2.80±0.2H) and caged C10 adamantane protons (1.7-2.7 ppm, 1±0.2H).

13C NMR分析如下峰的归属:     13C NMR峰位,ppm 结构     151.3,151,150,149.9,149.8,149.3,149.2 连接C10金刚烷环的季芳碳     132-131,128.5,125.3,125.2 C-H芳碳     129.6-129.1 芳环碳     123.7-122.9,121.8,121.1,120.9 连接在乙炔上的季芳碳     93.6 季乙炔碳(在二取代环上)     90.7,90.3,90.1,89.7,89.5,89.4,89.1,88.8,88.7 季乙炔碳     47.5,46.7 四取代C10金刚烷的C-H2     47.1 四取代C10金刚烷的C-H3     41 三取代C10金刚烷的C-H2     39.6 三取代C10金刚烷的C-H3     39.5,39.2-39.0,38.6,38.2,35 四取代C10金刚烷的季碳     32 芳环上叔丁基的C-H3     30 三取代C10金刚烷的C-H 13 C NMR analyzes the attribution of the following peaks: 13 C NMR peak position, ppm structure 151.3, 151, 150, 149.9, 149.8, 149.3, 149.2 Quaternary aromatic carbon attached to the C10 adamantane ring 132-131, 128.5, 125.3, 125.2 CH aromatic carbon 129.6-129.1 Aromatic ring carbon 123.7-122.9, 121.8, 121.1, 120.9 quaternary carbon attached to acetylene 93.6 quaternary acetylene carbon (on disubstituted ring) 90.7, 90.3, 90.1, 89.7, 89.5, 89.4, 89.1, 88.8, 88.7 quaternary acetylene carbon 47.5, 46.7 CH2 of tetrasubstituted C10 adamantane 47.1 CH3 of tetrasubstituted C10 adamantane 41 CH2 of trisubstituted C10 adamantane 39.6 CH3 of trisubstituted C10 adamantane 39.5, 39.2-39.0, 38.6, 38.2, 35 Quaternary carbon of tetrasubstituted C 10 adamantane 32 CH 3 of the tert-butyl group on the aromatic ring 30 CH of trisubstituted C 10 adamantane

GPC解析结果: GPC analysis results:

-1,3,5,7-四[3′/4′-(苯乙炔基)苯基]C10金刚烷(如图3D所示)的峰位分子量约为763;-1,3,5,7-Tetrakis[3'/4'-(phenylethynyl)phenyl]C 10 adamantane (as shown in Figure 3D) has a peak molecular weight of about 763;

-1,3/4-双{1′,3′,5′-三[3″/4″-(苯乙炔基)苯基]C10金刚烷-7′-基}苯(如图3F所示)的峰位分子量约为1330;-1,3/4-bis{1′,3′,5′-tri[3″/4″-(phenylethynyl)phenyl]C 10 adamantane-7′-yl}benzene (as shown in Figure 3F Shown) the peak molecular weight is about 1330;

-1,3-双-{3′/4′-[1″,3″,5″-三[3/4-(苯乙炔基)苯基]C10金刚烷-7″-基]苯基}-5,7-双(3″″/4″″-(苯乙炔基)苯基]C10金刚烷(如图3F所示)的峰位分子量约为1520(肩峰)。-1,3-bis-{3′/4′-[1″,3″,5″-tri[3/4-(phenylethynyl)phenyl]C 10 adamantane-7″-yl] The peak molecular weight of phenyl}-5,7-bis(3″″/4″″-(phenylethynyl)phenyl]C 10 adamantane (shown in FIG. 3F ) is about 1520 (shoulder peak).

根据GPC结果,单体和小分子与低聚物的比例为50±5%。According to the GPC results, the ratio of monomers and small molecules to oligomers was 50±5%.

FTIR结果如下:FTIR results are as follows:

    峰位cm-1(峰强度)Peak position cm -1 (peak intensity)     结构 structure     3050(弱) 3050 (weak)     芳族C-H Aromatic C-H     2930(弱) 2930 (weak)     C10金刚烷上的脂族C-HAliphatic CH on C10 adamantane     2200(非常弱) 2200 (very weak)     乙炔 Acetylene     1600(非常强) 1600 (very strong)     芳族C=C Aromatic C=C     1500(强) 1500(strong)     1450(中等) 1450 (medium)     1350(中等) 1350 (medium)

制备3preparation 3

溶剂对1,3,5,7-四[3′,4′-(苯乙炔基)苯基]C10金刚烷(如图1D所示)与1,3/4-双{1′,3′,5′-三[3″/4″-苯乙炔基)苯基]C10金刚烷-7′-基}苯(如图1F所示)和至少1,3-双{3′/4′-[1″,3″,5″-三[3/4-(苯乙炔基)苯基]C10金刚烷-7″-基]苯基}-5,7-双[3″″/4″″-(苯乙炔基)苯基]C10金刚烷(如图1F所示)比例的影响。The solvent pairs 1,3,5,7-tetrakis[3′,4′-(phenylethynyl)phenyl]C 10 adamantane (as shown in Figure 1D) and 1,3/4-bis{1′,3 ',5'-tris[3"/4"-phenylethynyl)phenyl]C 10 adamantane-7'-yl}benzene (as shown in Figure 1F) and at least 1,3-bis{3'/4 ′-[1″, 3″, 5″-tri[3/4-(phenylethynyl)phenyl]C 10 adamantane-7″-yl]phenyl}-5,7-bis[3″ Effect of "/4""-(phenylethynyl)phenyl]C 10 adamantane (as shown in Figure 1F) ratio.

将850毫升P1步骤(a)产物分成四等份,分别在石油醚、ligroine、庚烷和甲醇中沉淀析出。每一份在2520毫升溶剂中产生沉淀,真空过滤(Büchner漏斗,直径185mm),在过滤器上用150毫升溶剂洗涤两次,然后在约20℃的真空烘箱中干燥2小时、在40℃下干燥过夜和在70-80℃下干燥至恒重。850 ml of the product of step (a) of P1 was divided into four equal portions and precipitated in petroleum ether, ligroine, heptane and methanol respectively. Each aliquot produced a precipitate in 2520 ml of solvent, vacuum filtered (Büchner funnel, diameter 185 mm), washed twice with 150 ml of solvent on the filter, and then dried in a vacuum oven at about 20° C. for 2 hours at 40° C. Dry overnight and at 70-80°C to constant weight.

在烃溶剂中沉淀得到非常分散的淡灰色粉末,可直接进行干燥。在甲醇中沉淀得到深褐色颗粒状固体(颗粒大小约1毫米),在20℃下干燥形成焦油。该产物需进一步干燥。Precipitation in hydrocarbon solvents yields a very dispersed light gray powder, which can be dried directly. Precipitation in methanol gave a dark brown granular solid (particle size about 1 mm) which dried at 20°C to form a tar. The product required further drying.

通过GPC分析在反应期间和沉淀前的反应混合物。所有的滤液和最终固体通过GPC分析,结果列于表7中。表7中,PPT表示沉淀,单体为1,3,5,7-四(3′/4′-溴苯基)C10金刚烷(如图1A所示);二聚体是1,3/4-双[1′,3′,5′-三(3″/4″-溴苯基)C10金刚烷-7′-基]苯(如图1C所示);三聚体是1,3-双{3′4′-[1″,3″,5″-三(3/4-溴苯基)C10金刚烷-7″-基]苯基}-5,7-双(3″″/4″″-溴苯基)C10金刚烷(如图1C所示)。The reaction mixture was analyzed by GPC during the reaction and before precipitation. All filtrates and final solids were analyzed by GPC and the results are listed in Table 7. In Table 7, PPT means precipitation, the monomer is 1,3,5,7-tetra(3'/4'-bromophenyl) C 10 adamantane (as shown in Figure 1A); the dimer is 1,3 /4-bis[1′,3′,5′-tri(3″/4″-bromophenyl) C 10 adamantane-7′-yl]benzene (as shown in Figure 1C); the trimer is 1 , 3-bis{3′4′-[1″,3″,5″-tris(3/4-bromophenyl)C 10 adamantane-7″-yl]phenyl}-5,7- Bis(3""/4""-bromophenyl) C 10 adamantane (as shown in Figure 1C).

表7  沉淀前峰比例[单体∶(二聚体+三聚体)] PPT溶剂 沉淀后峰比例[单体∶(二聚体+三聚体)]  75.0∶25.0 石油醚 52.5∶47.4  75.0∶25.0 Ligroine 64.0∶36.0  75.0∶25.0 庚烷 66.2∶33.8  75.0∶25.0 甲醇 75.0∶25.0 Table 7 Pre-precipitation peak ratio [monomer: (dimer + trimer)] PPT solvent Peak ratio after precipitation [monomer: (dimer + trimer)] 75.0:25.0 petroleum ether 52.5:47.4 75.0:25.0 Ligroine 64.0:36.0 75.0:25.0 Heptane 66.2:33.8 75.0:25.0 Methanol 75.0:25.0

总结这些结果,在反应混合物中单体∶(二聚体+三聚体)的峰比例约为3∶1。在烃类溶剂中沉淀滤液损失的产物主要是(>90%)单体,而在洗涤滤液中的损失可忽略不计。在甲醇中沉淀滤液中没有形成产物。沉淀后单体∶(二聚体+三聚体)的比例提高(1∶1提高到3∶1),在滤液中的单体损失按以下顺序下降(56%下降到0%):石油醚、Ligroine、庚烷和甲醇。Summarizing these results, the monomer:(dimer+trimer) peak ratio in the reaction mixture was about 3:1. The product lost in the precipitation filtrate in the hydrocarbon solvent was predominantly (>90%) monomer, while the loss in the wash filtrate was negligible. No product was formed in the filtrate precipitated in methanol. After precipitation the monomer:(dimer+trimer) ratio increases (1:1 to 3:1) and the monomer loss in the filtrate decreases in the following order (56% to 0%): petroleum ether , Ligroine, Heptane and Methanol.

制备4-热固性组分的制备Preparation 4 - Preparation of Thermosetting Components

制备1产物混合物中的1,3/4-双{1′,3′,5′-三[3″/4″-(苯乙炔基)苯基]C10金刚烷-7′-基}苯(如图1F所示)使用制备液相色谱仪(PLC)分离。PLC与上述HPLC方法类似,只是使用了更大的色谱柱分离更大量的混合物(从几克到几百克)。1,3/4-Bis{1′,3′,5′-tris[3″/4″-(phenylethynyl)phenyl] C10adamantan -7′-yl}benzene in the product mixture of preparation 1 (as shown in Figure 1F) were separated using preparative liquid chromatography (PLC). PLC is similar to the HPLC method described above, except that larger columns are used to separate larger quantities of mixtures (from a few grams to hundreds of grams).

制备5-热固性组分的制备Preparation 5 - Preparation of Thermosetting Components

制备1产物混合物中的1,3-双{3′/4′-[1″,3″,5″-三[3/4-(苯乙炔基)苯基]C10金刚烷-7″-基]苯基}-5,7-双[3″″/4″″-(苯乙炔基)苯基]C10金刚烷(如图1F所示)使用制备液相色谱仪(PLC)分离。1,3-Bis{3′/4′-[1″,3″,5″-tris[3/4-(phenylethynyl)phenyl] C10adamantane -7 in preparation 1 product mixture ″-yl]phenyl}-5,7-bis[3″″/4″″-(phenylethynyl)phenyl] C10adamantane (as shown in Figure 1F) using a preparative liquid chromatograph (PLC) separate.

制备6-热固性组分的制备Preparation 6 - Preparation of Thermosetting Components

式XIIA、XIIB、XIIC或XIID的C14金刚烷单体和式XIII、XV、XXII和XXV的C14金刚烷单体的低聚物或聚合物通过以下方法制备。如图2所示,使用溴和Lewis酸催化剂将C14金刚烷转化为溴化C14金刚烷产物。然后在Lewis酸催化剂存在下将溴化C14金刚烷产物与溴苯反应生成溴苯化C14金刚烷。随后在所谓的Sonogashira偶合反应中使用的催化剂系统存在下,使该溴苯化C14金刚烷与末端炔反应。每步产物按照我们于2001年10月17日提交的待审批的专利申请PCT/US01/22204所描述的方法进行后处理。Oligomers or polymers of C adamantane monomers of formula XIIA, XIIB, XIIC or XIID and C adamantane monomers of formula XIII, XV, XXII and XXV are prepared by the following method. As shown in Figure 2, bromine and Lewis acid catalysts were used to convert C14 adamantanes to brominated C14 adamantane products. The C14 adamantane bromide product is then reacted with bromobenzene in the presence of a Lewis acid catalyst to generate bromobenzene C14 adamantane. This bromophenylated C14 adamantane is then reacted with a terminal alkyne in the presence of the catalyst system used in the so-called Sonogashira coupling reaction. The products of each step were worked up according to the method described in our pending patent application PCT/US01/22204 filed on October 17, 2001.

制备7-热固性组分(a)的制备Preparation 7 - Preparation of thermosetting component (a)

式XIIA、XIIB、XIIC或XIID的C14金刚烷单体和式XIII、XVI、XXII和XXV的C14金刚烷单体的低聚物或聚合物通过以下方法制备。如图1A至1F所示,C14金刚烷通过类似于制备1和2所描述的合成方法转化为C14金刚烷的溴苯化组合物。在图1A至1F中,在制备1和2所描述的Lewis酸催化剂和/或制备2中描述的第二种催化剂组分的存在下,使C14金刚烷与取代的卤代苯化合物反应。反应混合物进行后处理后得到单体、二聚体、三聚体和较高级低聚物的混合物。在图1D至1F中,然后在催化剂存在下将溴苯化C14金刚烷混合物与末端炔反应生成本发明的炔取代的C14金刚烷组合物。Oligomers or polymers of C adamantane monomers of formula XIIA, XIIB, XIIC or XIID and C adamantane monomers of formula XIII, XVI, XXII and XXV are prepared by the following method. As shown in Figures 1A to 1F, C14 adamantane was converted to the bromobenzylation composition of C14 adamantane by a synthetic method similar to that described for Preparations 1 and 2. In FIGS. 1A to 1F , a C14 adamantane is reacted with a substituted halobenzene compound in the presence of the Lewis acid catalyst described in Preparations 1 and 2 and/or the second catalyst component described in Preparation 2. Workup of the reaction mixture yields a mixture of monomers, dimers, trimers and higher oligomers. In FIGS. 1D to 1F , the bromobenzylated C14 adamantane mixture is then reacted with terminal alkynes in the presence of a catalyst to produce alkyne-substituted C14 adamantane compositions of the present invention.

发明实施例1-含苊和新戊酸乙烯酯的共聚物的成孔剂的制备:Invention Example 1-Containing the preparation of the porogen of the copolymer of acenaphthylene and vinyl pivalate:

如下制备含苊和新戊酸乙烯酯的共聚物的成孔剂。往往装备有机械搅拌器的250ml烧瓶中加入20g工业级苊(纯度75%,相当于0.986mol纯苊)、3.1579g(0.0246mol)新戊酸乙烯酯、0.5673g(2.464mmol)偶氮二甲酸二叔丁酯和95ml二甲苯。将混合物在室温下搅拌10分钟,得到均匀溶液。随后将反应溶液减压脱气5分钟,用氮气吹扫。重复该过程3次。将反应混合物在140℃、氮气气氛中加热6小时。将溶液冷却至室温,并滴加至237ml乙醇中。再将混合物在室温下搅拌20分钟。过滤收集形成的沉淀物并真空干燥。所得的共聚物的性质在上表5中给出(共聚物18)。其它包含苊和新戊酸乙烯酯共聚物的成孔剂按照类似的方法制得,但如上表5改变所用共聚单体的百分数、引发剂类型、所用百分数、反应时间和温度。A porogen comprising a copolymer of acenaphthene and vinyl pivalate was prepared as follows. Add 20g of industrial grade acenaphthene (75% purity, equivalent to 0.986mol of pure acenaphthene), 3.1579g (0.0246mol) of vinyl pivalate, 0.5673g (2.464mmol) of azodicarboxylic acid into a 250ml flask equipped with a mechanical stirrer Di-tert-butyl ester and 95ml xylene. The mixture was stirred at room temperature for 10 minutes to obtain a homogeneous solution. The reaction solution was then degassed under reduced pressure for 5 minutes, purging with nitrogen. Repeat this process 3 times. The reaction mixture was heated at 140°C under nitrogen atmosphere for 6 hours. The solution was cooled to room temperature and added dropwise to 237 ml of ethanol. The mixture was further stirred at room temperature for 20 minutes. The precipitate formed was collected by filtration and dried in vacuo. The properties of the resulting copolymer are given in Table 5 above (copolymer 18). Other porogens comprising copolymers of acenaphthene and vinyl pivalate were prepared in a similar manner, but varying the percentage of comonomer used, type of initiator, percentage used, reaction time and temperature as shown in Table 5 above.

发明实施例2-包含苊和丙烯酸叔丁酯共聚物的成孔剂的制备:Inventive Example 2 - Preparation of porogen comprising acenaphthylene and tert-butyl acrylate copolymer:

如下制备包含苊和丙烯酸叔丁酯共聚物的成孔剂。往装备有机械搅拌器的250ml烧瓶中加入20克工业级苊(纯度75%,相当于0.0986mol纯苊)、2.5263g(0.01971mol)丙烯酸叔丁酯、0.3884g(2.365mmol)2,2′-偶氮二异丁腈和92ml二甲苯。将混合物在室温下搅拌10分钟,直到得到均匀溶液。随后将反应溶液减压脱气5分钟,用氮气吹扫。重复该过程3次。随后将反应混合物在70℃、氮气气氛中加热24小时。将溶液冷却至室温,滴加至230ml乙醇中。再将混合物在室温下搅拌20min。过滤收集形成的沉淀物并真空干燥。所得共聚物的性质在上表5中给出(共聚物2)。其它包含苊和丙烯酸叔丁酯共聚物的成孔剂按照类似的方法制得,但如上表5改变所用共聚单体的百分数、引发剂类型、所用百分数、反应时间和温度。A porogen comprising acenaphthene and tert-butyl acrylate copolymer was prepared as follows. Add 20 grams of industrial grade acenaphthene (75% purity, equivalent to 0.0986mol pure acenaphthene), 2.5263g (0.01971mol) tert-butyl acrylate, 0.3884g (2.365mmol) 2,2' in a 250ml flask equipped with a mechanical stirrer - azobisisobutyronitrile and 92ml xylene. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed under reduced pressure for 5 minutes, purging with nitrogen. Repeat this process 3 times. The reaction mixture was then heated at 70° C. under nitrogen for 24 hours. The solution was cooled to room temperature and added dropwise to 230ml of ethanol. The mixture was further stirred at room temperature for 20 min. The precipitate formed was collected by filtration and dried in vacuo. The properties of the resulting copolymer are given in Table 5 above (copolymer 2). Other porogens comprising copolymers of acenaphthene and tert-butyl acrylate were prepared in a similar manner, but varying the percentages of comonomer used, type of initiator, percentages used, reaction time and temperature as shown in Table 5 above.

发明实施例3-包含苊和乙酸乙烯酯共聚物的成孔剂的制备:Inventive Example 3 - Preparation of porogen comprising acenaphthylene and vinyl acetate copolymer:

如下制备包含苊和乙酸乙烯酯共聚物的成孔剂。往装备有机械搅拌器的250ml烧瓶中加入20克工业级苊(纯度75%,相当于0.986mol纯苊)、1.6969g(0.01971mol)乙酸乙烯酯、0.3884g(2.365mmol)2,2′-偶氮二异丁腈和88ml二甲苯。将混合物在室温下搅拌10分钟,直到得到均匀溶液。随后将反应溶液减压脱气5分钟,用氮气吹扫。重复该过程3次。随后将反应混合物在70℃、氮气气氛中加热24小时。将溶液冷却至室温,滴加至220ml乙醇中。再将混合物在室温下搅拌20分钟。过滤收集形成的沉淀物并真空干燥。所得共聚物的性质在上表5中给出(共聚物18)。其它包含苊和乙酸乙烯酯共聚物的成孔剂按照类似方式制备,但改变所用共聚单体的百分数;所得共聚物的性质在上表5中给出(其聚物19)。A porogen comprising acenaphthene and vinyl acetate copolymer was prepared as follows. Add 20 grams of industrial grade acenaphthene (75% purity, equivalent to 0.986mol pure acenaphthene), 1.6969g (0.01971mol) vinyl acetate, 0.3884g (2.365mmol) 2,2'- Azobisisobutyronitrile and 88ml xylene. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed under reduced pressure for 5 minutes, purging with nitrogen. Repeat this process 3 times. The reaction mixture was then heated at 70° C. under nitrogen for 24 hours. The solution was cooled to room temperature and added dropwise to 220ml of ethanol. The mixture was further stirred at room temperature for 20 minutes. The precipitate formed was collected by filtration and dried in vacuo. The properties of the resulting copolymer are given in Table 5 above (copolymer 18). Other porogens comprising copolymers of acenaphthene and vinyl acetate were prepared in a similar manner, but varying the percentages of comonomers used; the properties of the resulting copolymers are given in Table 5 above (their polymer 19).

发明实施例4-包含聚苊均聚物的成孔剂的制备:Invention Example 4 - Preparation of porogen comprising polyacenaphthylene homopolymer:

苊的聚合物如下制备。往装备有机械搅拌器的250ml烧瓶中加入30克工业级苊(75%纯度,相当于0.148mol纯苊)、0.3404g偶氮二甲酸二叔丁酯(1.478mmol)和121ml二甲苯。将混合物在室温下搅拌10分钟,直到得到均匀溶液。随后将反应溶液减压脱气5分钟,用氮气吹扫。重复该过程3次。将反应混合物在140℃、氮气气氛中加热6小时。将溶液冷却至室温,滴加至303ml乙醇中。再将混合物在室温下搅拌20分钟。过滤收集形成的沉淀物并真空干燥。所得均聚物性质在下表5中给出(均聚物1),其中DBADC表示偶氮二甲酸二叔丁酯和PDI表示多分散性(Mw/Mn)。其它包含聚苊均聚物的成孔剂按照类似的方式制备,但如表8所示改变所用引发剂类型、百分数、反应时间和温度,表8中AIBN表示2,2′-偶氮二异丁腈。Polymers of acenaphthene were prepared as follows. Into a 250 ml flask equipped with a mechanical stirrer was added 30 g of technical grade acenaphthene (75% purity, equivalent to 0.148 mol of pure acenaphthene), 0.3404 g of di-tert-butyl azodicarboxylate (1.478 mmol) and 121 ml of xylene. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed under reduced pressure for 5 minutes, purging with nitrogen. Repeat this process 3 times. The reaction mixture was heated at 140°C under nitrogen atmosphere for 6 hours. The solution was cooled to room temperature and added dropwise to 303 ml of ethanol. The mixture was further stirred at room temperature for 20 minutes. The precipitate formed was collected by filtration and dried in vacuo. The resulting homopolymer properties are given in Table 5 below (Homopolymer 1), where DBADC stands for di-tert-butyl azodicarboxylate and PDI stands for polydispersity (Mw/Mn). Other porogens comprising polyacenaphthylene homopolymers were prepared in a similar manner, but the initiator type, percentage, reaction time and temperature were changed as shown in Table 8. In Table 8, AIBN represents 2,2'-azobisiso Nitrile.

                                     表8   均聚物r  引发剂类型   引发剂% 溶剂 温度(℃)   时间(小时)  Mn  Mw  PDI   1  DBADC   1% 二甲苯 140   6  3260  14469  4.44   2  DBADC   2% 二甲苯 140   6  2712  11299  4.17   3  DBADC   3% 二甲苯 140   6  3764  14221  3.78   4  DBADC   4% 二甲苯 140   6  3283  8411  2.56   5  DBADC   6% 二甲苯 140   6  2541  7559  2.97   6  DBADC   8% 二甲苯 140   6  2260  6826  3.02   7  DBADC   12% 二甲苯 140   6  2049  5805  2.83   8  DBADC   16% 二甲苯 140   6  2082  5309  2.55   9  DBADC   20% 二甲苯 140   6  1772  4619  2.61   10  DBADC   30% 二甲苯 140   6  1761  3664  2.08   11  AIBN   2% 二甲苯 70   24  3404  7193  2.11   12  AIBN   2% 二甲苯 70   24  3109  6141  1.98   13  AIBN   2% 二甲苯 70   24  3500  7295  2.08   14  AIBN   2% 二甲苯 70   24  3689  6165  1.67 Table 8 homopolymer Initiator type Initiator% solvent temperature(℃) time (hours) mn mw PDI 1 DBADC 1% Xylene 140 6 3260 14469 4.44 2 DBADC 2% Xylene 140 6 2712 11299 4.17 3 DBADC 3% Xylene 140 6 3764 14221 3.78 4 DBADC 4% Xylene 140 6 3283 8411 2.56 5 DBADC 6% Xylene 140 6 2541 7559 2.97 6 DBADC 8% Xylene 140 6 2260 6826 3.02 7 DBADC 12% Xylene 140 6 2049 5805 2.83 8 DBADC 16% Xylene 140 6 2082 5309 2.55 9 DBADC 20% Xylene 140 6 1772 4619 2.61 10 DBADC 30% Xylene 140 6 1761 3664 2.08 11 AIBN 2% Xylene 70 twenty four 3404 7193 2.11 12 AIBN 2% Xylene 70 twenty four 3109 6141 1.98 13 AIBN 2% Xylene 70 twenty four 3500 7295 2.08 14 AIBN 2% Xylene 70 twenty four 3689 6165 1.67

发明实施例5-包含聚苊均聚物、热固性组分和聚碳硅烷的组合物的Inventive Example 5 - Composition Comprising Polyacenaphthylene Homopolymer, Thermoset Component and Polycarbosilane 制备和发明实施例6-包含聚苊均聚物和热固性组分的组合物的制备Preparation and Invention Example 6 - Preparation of Compositions Comprising Polyacenaphthylene Homopolymer and Thermosetting Components

对于发明实施例5,将商品聚苊均聚物(25g,用作成孔剂);聚碳硅烷(Ch2SiH2)q,其中q为20-30(1.57g)(由Starfire Systems,Inc提供,用作增粘剂)和二甲苯(334g)称重并加入塑料瓶中。往该瓶中加入搅拌棒。将该瓶紧密密封并开始进行搅拌。将溶液在室温下搅拌24小时。将溶液倒入预先称重的带搅棒的2颈瓶中,其中装有类似于上述制备1或2的热固性组分(22.43g)中。所述瓶用二甲苯(约111g)洗涤,将所得的二甲苯溶液加入2颈瓶中,直到反应混合物的总重达到500g。将烧瓶夹紧并与水冷凝器连接,开启循环水。For Inventive Example 5, commercial polyacenaphthene homopolymer (25 g, used as a pore former); polycarbosilane (Ch 2 SiH 2 ) q , where q is 20-30 (1.57 g) (provided by Starfire Systems, Inc , used as a tackifier) and xylene (334 g) were weighed and added to a plastic bottle. Add a stir bar to the bottle. The bottle was tightly sealed and stirring started. The solution was stirred at room temperature for 24 hours. The solution was poured into a pre-weighed 2-neck bottle with a stir bar containing the thermoset component (22.43 g) similar to Preparation 1 or 2 above. The bottle was washed with xylene (approximately 111 g) and the resulting xylene solution was added to the 2-neck bottle until the total weight of the reaction mixture reached 500 g. Clamp the flask and connect it to a water condenser and turn on circulating water.

将体系用氮气(强氮气流)从冷凝器的顶部(入口)至侧颈(出口)洗刷30分钟。将冷凝器顶部的氮气入口替换为双通管(inlet-outlet),并用塞将侧颈密封。继续通入微弱的氮气流。降低烧瓶至油浴(预热至145℃并以恒定速率搅拌),使整个烧瓶浸没于油浴中。使反应烧瓶中的搅拌棒搅拌,反应混合物沸腾并回流15.5小时。停止加热和搅拌。将烧瓶从油浴中取出,静置冷却至室温。使用磁条取出搅拌棒,开始用环己酮置换溶剂。The system was flushed with nitrogen (strong nitrogen flow) from the top (inlet) to the side neck (outlet) of the condenser for 30 minutes. The nitrogen inlet at the top of the condenser was replaced with an inlet-outlet and the side neck was sealed with a plug. The slight nitrogen stream was continued. Lower the flask into an oil bath (preheated to 145°C and stir at a constant rate) and submerge the entire flask in the oil bath. The stir bar in the reaction flask was stirred and the reaction mixture was boiled and refluxed for 15.5 hours. Discontinue heating and stirring. The flask was taken out from the oil bath and allowed to stand to cool to room temperature. Remove the stir bar using the magnetic strip and begin solvent displacement with cyclohexanone.

通过旋转蒸发器除去大部分二甲苯,直到得到粘稠液体。剩余的反应混合物经称量为约60至90g。随后往烧瓶中加入500克环己酮。再次通过旋转蒸发器除去大部分二甲苯,直到得到粘稠液体。剩余的反应混合物经称量为约60至90g。重复该操作两次,直至所有的二甲苯被置换为环己酮。随后将溶液用环己酮稀释,得到20%固体浓度的溶液。将溶液以小于20磅/平方英寸的速率缓慢通过0.1μm的teflon过滤器过滤。重复前述步骤。最终的组合物含20%固体物,其中6.7%重量聚碳硅烷、50%重量聚苊均聚物,剩余为热固性组分。Most of the xylene was removed by rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture was weighed to be about 60 to 90 g. Then 500 grams of cyclohexanone were added to the flask. Most of the xylene was removed again by rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture was weighed to be about 60 to 90 g. This operation was repeated twice until all xylene was replaced with cyclohexanone. The solution was then diluted with cyclohexanone to obtain a 20% solids solution. The solution was slowly filtered through a 0.1 μm teflon filter at a rate of less than 20 psig. Repeat the preceding steps. The final composition contained 20% solids, of which 6.7% by weight polycarbosilane, 50% by weight polyacenaphthylene homopolymer, and the remainder being the thermoset component.

发明实施例6重复发明实施例5的方法,不同之处在于不加入增粘剂,因此组合物含50%重量聚苊均聚物,剩余为热固性组分。发明实施例7-10-包含聚苊均聚物、热固性组分和聚碳硅烷组合物的制备Inventive Example 6 The method of Inventive Example 5 was repeated except that no tackifier was added, so that the composition contained 50% by weight polyacenaphthylene homopolymer and the remainder was thermosetting components. Inventive Examples 7-10 - Preparation of Compositions Comprising Polyacenaphthylene Homopolymer, Thermosetting Component and Polycarbosilane

发明实施例7重复发明实施例5的方法,不同之处在于聚碳硅烷(CH2SiH2)q,其中q为20-30(由Starfire Systems,Inc提供)的用量为2.68g。最终组合物含20%固体物,其中12%重量聚碳硅烷、50%重量聚苊均聚物,剩余为热固性组分。发明实施例8-10重复发明实施例7的方法,不同之处在于按照下表9改变聚苊均聚物的百分含量。Inventive Example 7 Repeat the method of Inventive Example 5, except that polycarbosilane (CH 2 SiH 2 ) q , wherein q is 20-30 (provided by Starfire Systems, Inc) is used in an amount of 2.68 g. The final composition contained 20% solids, of which 12% by weight polycarbosilane, 50% by weight polyacenaphthylene homopolymer, and the remainder being the thermoset component. Invention Examples 8-10 Repeat the method of Invention Example 7, except that the percentage content of polyacenaphthylene homopolymer is changed according to Table 9 below.

               表9     发明实施例     聚苊均聚物%重量     8     35     9     20     10     10 Table 9 Embodiment of the invention Polyacenaphthene Homopolymer % by weight 8 35 9 20 10 10

发明实施例11-17-包含聚苊均聚物、热固性化合物和聚碳硅烷组合物Inventive Examples 11-17 - Compositions Comprising Polyacenaphthylene Homopolymer, Thermosetting Compound and Polycarbosilane 的制备preparation of

重复发明实施例5的方法,不同之处在于聚碳硅烷(CH2SiH2)q,其中q为20-30(由Starfire Systems,Inc提供)的用量为1.92g。按照下表10改变聚苊均聚物的百分含量。The method of Inventive Example 5 was repeated, except that polycarbosilane (CH 2 SiH 2 ) q , wherein q was 20-30 (provided by Starfire Systems, Inc) was used in an amount of 1.92 g. Change the percentage of polyacenaphthylene homopolymer according to Table 10 below.

            表10     发明实施例     聚苊均聚物%重量     11     28     12     26.8     13     27.2     14     26.5     15     25.4     16     38.3     17     30.1 Table 10 Embodiment of the invention Polyacenaphthene Homopolymer % by weight 11 28 12 26.8 13 27.2 14 26.5 15 25.4 16 38.3 17 30.1

发明实施例18-21-包含聚苊均聚物,热固性组分和聚碳硅烷的组合物Inventive Examples 18-21 - Compositions Comprising Polyacenaphthylene Homopolymer, Thermoset Component and Polycarbosilane 的制备preparation of

重复发明实施例7,不同之处在于聚苊均聚物的用量为25%重量并且所用的聚苊均聚物的类型如下表11所述。Inventive Example 7 was repeated except that the amount of polyacenaphthylene homopolymer used was 25% by weight and the type of polyacenaphthylene homopolymer used is described in Table 11 below.

             表11     发明实施例     聚苊均聚物     18     表4的均聚物1     19     表4的均聚物2     20     表4的均聚物3     21     表5的均聚物4 Table 11 Embodiment of the invention Polyacenaphthene homopolymer 18 Homopolymer 1 of Table 4 19 Homopolymer 2 of Table 4 20 Homopolymer 3 of Table 4 twenty one Homopolymer 4 of Table 5

发明实施例22-23-包含聚苊均聚物、热固性组分和邻甲酚型线形酚醛Inventive Examples 22-23 - Comprising Polyacenaphthylene Homopolymer, Thermoset Component and Ortho-Cresol Novolac 树脂的共混物的组合物的制备Preparation of resin blend compositions

对于发明实施例22,往装备有磁力搅拌棒的65-mL塑料瓶中加入类似于上述制备1或2的热固性组分(4.17g)、邻甲酚型线形酚醛树脂(0.125g,作为增粘剂)、聚苊(1.074g,作为成孔剂)和环己酮(24.46g)。将混合物在室温下搅拌2小时,随后将形成的均匀溶液通过0.1μm的过滤器过滤。发明实施例23重复发明实施例22的方法,不同之处在于使用了6%重量的邻甲酚型线形酚醛树脂。For Inventive Example 22, to a 65-mL plastic bottle equipped with a magnetic stirring bar was added a thermosetting component similar to Preparation 1 or 2 above (4.17 g), o-cresol novolac resin (0.125 g, as a tackifier agent), polyacenaphthylene (1.074g, as a pore former) and cyclohexanone (24.46g). The mixture was stirred at room temperature for 2 hours, then the resulting homogeneous solution was filtered through a 0.1 μm filter. Inventive Example 23 The method of Inventive Example 22 was repeated except that 6% by weight of o-cresol type novolac phenolic resin was used.

发明实施例24-30-包含聚苊共聚物、热固性化合物和聚碳硅烷的组合Inventive Examples 24-30 - Combinations Comprising Polyacenaphthene Copolymer, Thermosetting Compound and Polycarbosilane 物的制备preparation

对于发明实施例24,往装备有磁力搅拌棒的塑料瓶中加入聚苊共聚物(4.48g,表2的共聚物13,作为成孔剂);聚碳硅烷(CH2SiH2)q,其中q为20-30(0.48g,作为增粘剂)和二甲苯(59.4g)。将溶液在室温下搅拌24小时。随后将溶液转移至100ml三颈瓶中。加入类似于上述制备1或2的热固性组分(4.00g)和另外的19.8克二甲苯。将溶液用氮气吹扫5分钟,并于145℃下加热15.5小时。通过旋转蒸发器除去大部分二甲苯,直到得到粘稠液体。剩余的反应混合物经称量为约10至12g。随后往烧瓶中加入100克环己酮。通过旋转蒸发器除去大部分二甲苯,直到得到粘稠液体。剩余的反应混合物经称量为约10至12g。再重复该操作两次,以确保所有的二甲苯已被转化为环己酮。随后将溶液用环己酮稀释,得到18%固体浓度的溶液。将溶液以小于20磅/平方英寸的速率缓慢通过0.1μm的teflon过滤器过滤。重复前述步骤。最终的组合物含18%固体物,其中12%重量聚碳硅烷、50%重量聚苊均聚物,剩余为热固性组分。For inventive example 24, polyacenaphthylene copolymer (4.48 g, copolymer 13 of Table 2, as a pore forming agent) was added to a plastic bottle equipped with a magnetic stirring bar; polycarbosilane (CH 2 SiH 2 ) q , where q is 20-30 (0.48g, as tackifier) and xylene (59.4g). The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 100 ml three-neck flask. A thermosetting component similar to Preparation 1 or 2 above (4.00 g) and an additional 19.8 g of xylene were added. The solution was purged with nitrogen for 5 minutes and heated at 145°C for 15.5 hours. Most of the xylene was removed by rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture was weighed to about 10 to 12 g. Then 100 grams of cyclohexanone was added to the flask. Most of the xylene was removed by rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture was weighed to about 10 to 12 g. This operation was repeated two more times to ensure that all xylene had been converted to cyclohexanone. The solution was then diluted with cyclohexanone to give a solution at 18% solids concentration. The solution was slowly filtered through a 0.1 μm teflon filter at a rate of less than 20 psig. Repeat the preceding steps. The final composition contained 18% solids, of which 12% by weight polycarbosilane, 50% by weight polyacenaphthylene homopolymer, and the remainder being the thermoset component.

发明实施例25至30重复发明实施例24,不同之处在于使用下表12的成孔剂。Inventive Examples 25 to 30 Inventive Example 24 was repeated except that the porogens of Table 12 below were used.

            表12     发明实施例     表2的共聚物     24     7     25     11     26     9     27     6     28     4     29     3     30     1 Table 12 Embodiment of the invention Copolymers of Table 2 twenty four 7 25 11 26 9 27 6 28 4 29 3 30 1

发明实施例31-32-包含聚己内酯、热固性化合物和聚碳硅烷的组合物Inventive Examples 31-32 - Compositions comprising polycaprolactone, thermosetting compound and polycarbosilane 的制备preparation of

对于发明实施例31,所用的溶剂为二甲苯。往装备有磁力搅拌棒的塑料瓶中加入聚己内酯(4.48g,作为成孔剂);聚碳硅烷(CH2SiH2)q,其中q为20-30(0.48g,作为增粘剂)和二甲苯(59.4g)。将溶液在室温下搅拌24小时。随后将溶液转移至250ml三颈瓶中。加入类似于上述制备1或2的热固性组分(4.00g)和另外的19.8克二甲苯。将溶液用氮气吹扫5分钟,并于145℃下加热15.5小时。将溶液以小于20磅/平方英寸的速率缓慢通过0.1μm的teflon过滤器过滤。重复前述步骤。最终的组合物含10%固体物,其中12%重量聚碳硅烷、50%重量聚苊均聚物,剩余为热固性组分。For Inventive Example 31, the solvent used was xylene. Add polycaprolactone (4.48g, as a pore forming agent) to a plastic bottle equipped with a magnetic stirring bar ; ) and xylene (59.4 g). The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 250ml three-neck bottle. A thermosetting component similar to Preparation 1 or 2 above (4.00 g) and an additional 19.8 g of xylene were added. The solution was purged with nitrogen for 5 minutes and heated at 145°C for 15.5 hours. The solution was slowly filtered through a 0.1 μm teflon filter at a rate of less than 20 psig. Repeat the preceding steps. The final composition contained 10% solids, of which 12% by weight polycarbosilane, 50% by weight polyacenaphthylene homopolymer, and the remainder being the thermoset component.

对于发明实施例32,所用的溶剂为环己酮。往装备有磁力搅拌棒的塑料瓶中加入聚己内酯(4.48g,作为成孔剂);聚碳硅烷(CH2SiH2)q,其中q为20-30(0.48g,作为增粘剂)和二甲苯(59.4g)。将溶液在室温下搅拌24小时。随后将溶液转移至250ml三颈瓶中。加入类似于上述制备1或2的热固性组分(4.00g)和另外的19.8克二甲苯。将溶液用氮气吹扫5分钟,并于145℃下加热15.5小时。通过旋转蒸发器除去大部分二甲苯,直到得到粘稠液体。剩余的反应混合物经称量为约10至12g。随后往烧瓶中加入100克环己酮。通过旋转蒸发器除去大部分二甲苯,直到得到粘稠液体。剩余的反应混合物经称量为约10至12g。再重复该操作两次,以确保所有的二甲苯已被转化为环己酮。随后将溶液用环己酮稀释,得到18%固体浓度的溶液。将溶液以小于20磅/平方英寸的速率缓慢通过0.1μm的teflon过滤器过滤。重复前述步骤。最终的组合物含18%固体物,其中12%重量聚碳硅烷、50%重量聚苊均聚物,剩余为热固性组分。For Inventive Example 32, the solvent used was cyclohexanone. Add polycaprolactone (4.48g, as a pore forming agent) to a plastic bottle equipped with a magnetic stirring bar ; ) and xylene (59.4 g). The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 250ml three-neck bottle. A thermosetting component similar to Preparation 1 or 2 above (4.00 g) and an additional 19.8 g of xylene were added. The solution was purged with nitrogen for 5 minutes and heated at 145°C for 15.5 hours. Most of the xylene was removed by rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture was weighed to about 10 to 12 g. Then 100 grams of cyclohexanone was added to the flask. Most of the xylene was removed by rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture was weighed to about 10 to 12 g. This operation was repeated two more times to ensure that all xylene had been converted to cyclohexanone. The solution was then diluted with cyclohexanone to give a solution at 18% solids concentration. The solution was slowly filtered through a 0.1 μm teflon filter at a rate of less than 20 psig. Repeat the preceding steps. The final composition contained 18% solids, of which 12% by weight polycarbosilane, 50% by weight polyacenaphthylene homopolymer, and the remainder being the thermoset component.

发明实施例33-35-包含聚己内酯、热固性化合物和邻甲酚型线形酚醛Inventive Examples 33-35 - Containing Polycaprolactone, Thermosetting Compound and Ortho-Cresol Novolac 树脂的共混物的组合物的制备Preparation of resin blend compositions

往装备有磁力搅拌棒的塑料瓶中加入类似于上述制备1或2的热固性组分(4.00g)、邻甲酚型线形酚醛树脂(0.12g,分子量1760,由Schenectady International Inc提供,作为增粘剂)、聚己内酯(2.53g,作为成孔剂)和37.66克环己酮。将溶液在室温下搅拌2小时。将溶液以小于20磅/平方英寸的速率缓慢通过0.1μm的teflon过滤器过滤。重复前述步骤。最终组合物含15%固体物,其中3%重量邻甲酚型线形酚醛树脂(基于热固性组分计算)、35%重量聚己内酯(基于总的固体物计算)和剩余的为热固性组分。To a plastic bottle equipped with a magnetic stirring bar was added a thermosetting component (4.00 g) similar to Preparation 1 or 2 above, o-cresol type novolac resin (0.12 g, molecular weight 1760, supplied by Schenectady International Inc, as a tackifier agent), polycaprolactone (2.53 g, as a pore former) and 37.66 g of cyclohexanone. The solution was stirred at room temperature for 2 hours. The solution was slowly filtered through a 0.1 μm teflon filter at a rate of less than 20 psig. Repeat the preceding steps. The final composition contained 15% solids, of which 3% by weight o-cresol novolak (calculated on the thermoset component), 35% by weight polycaprolactone (calculated on the total solids) and the remainder being the thermoset component .

按照表13给出条件,重复上述步骤。According to the conditions given in Table 13, repeat the above steps.

                   表13     发明实施例     邻甲酚型线形酚醛树脂%重量     33     3.4     34     6.9     35     12.2 Table 13 Embodiment of the invention o-cresol type novolac resin % by weight 33 3.4 34 6.9 35 12.2

发明实施例36-37-包含聚苊均聚物、聚己内酯、热固性化合物和聚碳Inventive Examples 36-37 - Comprising Polyacenaphthene Homopolymer, Polycaprolactone, Thermosetting Compound and Polycarbon 硅烷的共混物的组合物的制备Preparation of blend compositions of silanes

对于发明实施例36,所用的溶剂为二甲苯。往装备有磁力搅拌棒的塑料瓶中加入聚己内酯(4.48g)和商品聚苊均聚物(0.7906g,作为成孔剂);聚碳硅烷(CH2SiH2)q,其中q为20-30(0.48g,作为增粘剂,由Starfire Systems,Inc提供)和二甲苯(64.74g)。将溶液在室温下搅拌24小时。随后将溶液转移至250ml三颈瓶中。加入类似于上述制备1或2的热固性组分(4.00g)和另外的21.58克二甲苯。将溶液用氮气吹扫5分钟,并于145℃下加热15.5小时。将溶液以小于20磅/平方英寸的速率缓慢通过0.1μm的teflon过滤器过滤。重复前述步骤。最终的组合物含16.5%固体物,其中12%重量聚碳硅烷(基于热固性组分计算)、15%重量聚苊(基于热固性组分的重量计算),剩余为热固性组分。For Inventive Example 36, the solvent used was xylene. Add polycaprolactone (4.48g) and commercial polyacenaphthylene homopolymer (0.7906g, as a pore-forming agent) to a plastic bottle equipped with a magnetic stirring bar; polycarbosilane (CH 2 SiH 2 ) q , where q is 20-30 (0.48 g, supplied by Starfire Systems, Inc. as a tackifier) and xylene (64.74 g). The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 250ml three-neck bottle. A thermosetting component similar to Preparation 1 or 2 above (4.00 g) and an additional 21.58 g of xylene were added. The solution was purged with nitrogen for 5 minutes and heated at 145°C for 15.5 hours. The solution was slowly filtered through a 0.1 μm teflon filter at a rate of less than 20 psig. Repeat the preceding steps. The final composition contained 16.5% solids, of which 12% by weight polycarbosilane (based on the weight of the thermoset component), 15% by weight polyacenaphthene (based on the weight of the thermoset component), and the remainder being the thermoset component.

对于发明实施例37,所用的溶剂为环己酮。往装备有磁力搅拌棒的塑料瓶中加入聚己内酯(4.48g)和商品聚苊均聚物(0.7906g,作为成孔剂);聚碳硅烷(CH2SiH2)q,其中q为20-30(0.48g,作为增粘剂)和二甲苯(64.74g g)。将溶液在室温下搅拌24小时。随后将溶液转移至250ml三颈瓶中。加入类似于上述制备1或2的热固性组分(4.00g)和另外的21.58克二甲苯。将溶液用氮气吹扫5分钟,并于145℃下加热15.5小时。通过旋转蒸发器除去大部分二甲苯,直到得到粘稠液体。剩余的反应混合物经称量为约10至12g。随后往烧瓶中加入100克环己酮。通过旋转蒸发器除去大部分二甲苯,直到得到粘稠液体。剩余的反应混合物经称量为约10至12g。再重复该操作两次,以确保所有的二甲苯己被转化为环己酮。随后将溶液用环己酮稀释,得到18%固体浓度的溶液。将溶液以小于20磅/平方英寸的速率缓慢通过0.1μm的teflon过滤器过滤。重复前述步骤。For Inventive Example 37, the solvent used was cyclohexanone. Add polycaprolactone (4.48g) and commercial polyacenaphthylene homopolymer (0.7906g, as a pore-forming agent) to a plastic bottle equipped with a magnetic stirring bar; polycarbosilane (CH 2 SiH 2 ) q , where q is 20-30 (0.48 g, as tackifier) and xylene (64.74 g g). The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 250ml three-neck bottle. A thermosetting component similar to Preparation 1 or 2 above (4.00 g) and an additional 21.58 g of xylene were added. The solution was purged with nitrogen for 5 minutes and heated at 145°C for 15.5 hours. Most of the xylene was removed by rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture was weighed to about 10 to 12 g. Then 100 grams of cyclohexanone was added to the flask. Most of the xylene was removed by rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture was weighed to about 10 to 12 g. This operation was repeated two more times to ensure that all xylene was converted to cyclohexanone. The solution was then diluted with cyclohexanone to give a solution at 18% solids concentration. The solution was slowly filtered through a 0.1 μm teflon filter at a rate of less than 20 psig. Repeat the preceding steps.

发明实施例38-41-包含聚苊均聚物、聚己内酯、热固性化合物和聚碳硅烷的共混物的组合物的制备Inventive Examples 38-41 - Preparation of Compositions Comprising Blends of Polyacenaphthene Homopolymer, Polycaprolactone, Thermosetting Compound and Polycarbosilane

发明实施例38和40重复发明实施例37的方法,不同之处在于按照表14改变聚碳硅烷的用量。发明实施例39和41重复发明实施例36的方法,不同之处在于按照表14改变聚碳硅烷的用量。在表14中,PAN表示聚苊均聚物、PCL表示聚己内酯和PCS表示聚碳硅烷。Inventive Examples 38 and 40 The method of Inventive Example 37 was repeated except that the amount of polycarbosilane used was changed according to Table 14. Inventive Examples 39 and 41 The method of Inventive Example 36 was repeated except that the amount of polycarbosilane used was changed according to Table 14. In Table 14, PAN means polyacenaphthylene homopolymer, PCL means polycaprolactone, and PCS means polycarbosilane.

                             表14  发明实施例  成孔剂共混物中PAN%  成孔剂共混物中PCL%    PCS%     溶剂     38      15      50     6.7    环己酮     39      15      50     6.7    二甲苯     40      15      50     3    环己酮     41      15      50     3    二甲苯 Table 14 Embodiment of the invention PAN% in porogen blend PCL % in porogen blend PCS% solvent 38 15 50 6.7 Cyclohexanone 39 15 50 6.7 Xylene 40 15 50 3 Cyclohexanone 41 15 50 3 Xylene

发明实施例42-发明实施例5的薄膜的制备Inventive Example 42-Preparation of the Film of Inventive Example 5

在本领域技术人员已知的常规涂覆条件下,将发明实施例5的组合物施加于一基体上。在氮气(<50ppm氧气)保护下,将得到的旋涂组合物分别在125℃、250℃和300℃下下烘干1分钟。熔炉固化条件为氮气(26升/分钟)保护、自250℃开始,以每分钟5°K升温,在400℃下60分钟。固化温度范围为350℃-450℃。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在表15中给出。The composition of Inventive Example 5 was applied to a substrate under conventional coating conditions known to those skilled in the art. Under the protection of nitrogen (<50 ppm oxygen), the obtained spin-coating compositions were dried at 125° C., 250° C. and 300° C. for 1 minute, respectively. Furnace solidification conditions are nitrogen (26 liters/minute) protection, starting from 250 ° C, heating at 5 ° K per minute, and 60 minutes at 400 ° C. The curing temperature ranges from 350°C to 450°C. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The obtained layers were analyzed according to the above-mentioned test method, and the properties of the analyzed layers are given in Table 15.

                         表15     参数     发明实施例42     固化条件     400℃/2小时     薄膜厚度     0.3-1.2μm     折射率n(烘干后)     1.6600     折射率n(固化后)     1.3600     厚度(烘干后,nm)     2885.00     厚度(固化后,nm)     2874.00     收缩率%(烘干至固化)     -0.30     介电常数(室温)     1.93     介电常数(脱气)     1.901     模量(Gpa)     2.26±0.59(1.2μm)     硬度(Gpa)     0.16±0.05(1.2μm)     玻璃化转变温度(℃)     >410(第一次循环)     平均峰孔径     20nm     平均孔径     4.1nm     孔体积(cm3/g)     0.557     薄膜质量     良好     胶带测试     合格     在425℃下的稳定性     4.5% Table 15 parameter Invention Example 42 curing conditions 400℃/2 hours membrane thickness 0.3-1.2μm Refractive index n (after drying) 1.6600 Refractive index n (after curing) 1.3600 Thickness (after drying, nm) 2885.00 Thickness (after curing, nm) 2874.00 Shrinkage % (drying to curing) -0.30 Dielectric constant (room temperature) 1.93 Dielectric constant (outgassed) 1.901 Modulus (Gpa) 2.26±0.59(1.2μm) Hardness (Gpa) 0.16±0.05(1.2μm) Glass transition temperature (°C) >410 (the first cycle) Average peak pore size 20nm Average pore size 4.1nm Pore volume (cm 3 /g) 0.557 film quality good tape test qualified Stability at 425°C 4.5%

发明实施例43-发明实施例6的薄膜的制备Inventive Example 43-Preparation of the Film of Inventive Example 6

在本领域技术人员已知的常规涂覆条件下,将发明实施例6的组合物施加于一基体上,并使用发明实施例42的烘干和固化条件。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在表16中给出。The composition of Inventive Example 6 was applied to a substrate under conventional coating conditions known to those skilled in the art, and the drying and curing conditions of Inventive Example 42 were used. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The obtained layers were analyzed according to the above test methods, and the properties of the analyzed layers are given in Table 16.

                     表16     参数     发明实施例43     折射率n(烘干后)     1.6600     折射率n(固化后)     1.4150     N2     2.00     厚度(烘干后,nm)     2740.74     厚度(固化后,nm)     2450.00     收缩率%(烘干至固化)     -10.61     薄膜质量     浑浊(表明发生相分离) Table 16 parameter Invention Example 43 Refractive index n (after drying) 1.6600 Refractive index n (after curing) 1.4150 N 2 2.00 Thickness (after drying, nm) 2740.74 Thickness (after curing, nm) 2450.00 Shrinkage % (drying to curing) -10.61 film quality Cloudy (indicating phase separation)

发明实施例43的结果显示出在发明实施例42.中存在增粘剂的益处。The results for Inventive Example 43 show the benefit of the presence of tackifier in Inventive Example 42.

发明实施例44-47-发明实施例7-10的薄膜的制备Inventive Examples 44-47 - Preparation of Films of Inventive Examples 7-10

在本领域技术人员已知的常规涂覆条件下,将发明实施例7-10的各组合物施加于基体上,并使用发明实施例42的烘干和固化条件。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在表17中给出。Each of the compositions of Inventive Examples 7-10 was applied to the substrate under conventional coating conditions known to those skilled in the art, and the drying and curing conditions of Inventive Example 42 were used. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The obtained layers were analyzed according to the above test methods, and the properties of the analyzed layers are given in Table 17.

图4和5给出了扫描电镜(SEM)的结果。图4显示薄膜的横截面而图5显示薄膜的表面。由SEM可见,随着成孔剂的量的增加,在薄膜表面可观察到或可见到细小的孔。因此,随着成孔剂用量的减少,表面显示出具有较低的孔隙率。同时,由SEM横截面图可见,随着成孔剂用量的增加,平均孔径也提高。图6的TDMS曲线表明在约380℃下成孔剂开始分解。Figures 4 and 5 present the results of scanning electron microscopy (SEM). Figure 4 shows a cross-section of the film and Figure 5 shows the surface of the film. It can be seen from SEM that with the increase of the amount of porogen, fine pores can be observed or seen on the surface of the film. Therefore, the surface appears to have lower porosity as the amount of porogen decreases. At the same time, it can be seen from the SEM cross-sectional view that the average pore diameter increases with the increase of the amount of porogen. The TDMS curve of Figure 6 shows that the porogen begins to decompose at about 380°C.

                                    表17   参数     发明实施例44   发明实施例45   发明实施例46   发明实施例47   成孔剂含量     50%   35%   20%   10%   增粘剂     12%   12%   12%   12%   固化条件     400℃/1h   400℃/1h   400℃/1h   400℃/1h   薄膜厚度     0.3-1.2μm   0.3-1.2μm   0.3-1.2μm   0.3-1.2μm   折射率(RI)n(固化后)     1.39   1.50   1.56   1.59   (RI)(RI)     1.93   2.25   2.44   2.54   收缩率%(烘干至固化)     11.7   10.5   6.4   4.1   介电常数(室温)     2.07   2.30   2.54   2.75   介电常数(脱气)     2.03   2.24   2.46   2.66   模量(Gpa)     2.40±0.121(1.2μm)   2.60±0.118(1.2μm)   4.80±0.152(1.2μm)   5.13±0.192(1.2μm)   硬度(Gpa)     0.12±0.018(1.2μm)   0.24±0.043(1.2μm)   0.33±0.025(1.2μm)   0.32±0.037(1.2μm)   平均峰孔径     12.0nm   9.0nm   5.0nm   3.0nm   平均孔径     5.1nm   4.0nm   2.8nm   2.7nm   孔体积(cm3/g)     0.669   0.511   0.315   0.233   孔隙率     较大孔   大孔   大部分为微孔   微孔   估算孔隙率(%)     41   34   24   19   表面积(m2/g)     521   511   450   341   胶带测试     合格,干/湿   合格,干/湿   合格,干/湿   合格,干/湿   在425℃下的稳定性     5.45%   5.07%   4.30%   4.07% Table 17 parameter Invention Example 44 Invention Example 45 Invention Example 46 Invention Example 47 Pore former content 50% 35% 20% 10% Tackifier 12% 12% 12% 12% curing conditions 400℃/1h 400℃/1h 400℃/1h 400℃/1h membrane thickness 0.3-1.2μm 0.3-1.2μm 0.3-1.2μm 0.3-1.2μm Refractive index (RI)n (after curing) 1.39 1.50 1.56 1.59 (RI)(RI) 1.93 2.25 2.44 2.54 Shrinkage % (drying to curing) 11.7 10.5 6.4 4.1 Dielectric constant (room temperature) 2.07 2.30 2.54 2.75 Dielectric constant (outgassed) 2.03 2.24 2.46 2.66 Modulus (Gpa) 2.40±0.121(1.2μm) 2.60±0.118(1.2μm) 4.80±0.152(1.2μm) 5.13±0.192(1.2μm) Hardness (Gpa) 0.12±0.018(1.2μm) 0.24±0.043(1.2μm) 0.33±0.025(1.2μm) 0.32±0.037(1.2μm) Average peak pore size 12.0nm 9.0nm 5.0nm 3.0nm Average pore size 5.1nm 4.0nm 2.8nm 2.7nm Pore volume (cm 3 /g) 0.669 0.511 0.315 0.233 Porosity larger hole big hole mostly microporous microporous Estimated porosity (%) 41 34 twenty four 19 Surface area (m 2 /g) 521 511 450 341 tape test pass, dry/wet pass, dry/wet pass, dry/wet pass, dry/wet Stability at 425°C 5.45% 5.07% 4.30% 4.07%

这些结果表明随后成孔剂加入量的增加介电常数降低。These results indicate that the dielectric constant decreases with subsequent increase in porogen addition.

发明实施例48-54-发明实施例11-17和对比实施例C的薄膜的制备Preparation of thin films of inventive examples 48-54-inventive examples 11-17 and comparative example C

在本领域技术人员已知的常规涂覆条件下,将发明实施例11-17的各种组合物施加于基体上,并使用发明实施例42的烘干和固化条件。对比实施例C按照类似于我们于2002年1月15日提交的美国系列号60/350,187的发明实施例的方式进行制备,因此不含成孔剂。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在表18中给出。The various compositions of Inventive Examples 11-17 were applied to the substrate under conventional coating conditions known to those skilled in the art, and the drying and curing conditions of Inventive Example 42 were used. Comparative Example C was prepared in a manner similar to our inventive examples in US Serial No. 60/350,187 filed January 15, 2002, and thus contained no porogen. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The obtained layers were analyzed according to the above test methods, and the properties of the analyzed layers are given in Table 18.

                                                                 表18   发明实施例或对比实施例     折射率(烘干后)     折射率(固化后)   厚度()(烘干后)   厚度()(固化后)  收缩率%(烘干和固化后)     介电常数k(室温)     介电常数k(脱气)     -Δk%   48     1.661     1.529   8518.23   8067.62  -5.29     2.48     2.18     -12.10   49     1.657     1.532   8057.8   7541.79  -6.40     2.51     2.42     -3.59   50     1.661     1.499   7225.37   7093.32  -1.83     2.54     2.44     -3.94   51     1.658     1.521   8659.18   8510.56  -1.72     2.51     2.43     -3.19   52     1.657     1.510   8025.79   7952.16  -0.92     2.53     2.43     -3.95   53     1.659     1.500   8633.55   7815.56  -9.47     2.42     2.33     -3.72   54     1.661     1.504   8899.51   8605.25  -3.31     2.42     2.35     -2.89   C     1.677     1.617   3152.00   3252.00  3.17     2.69     2.62     -2.60   发明实施例   表面积(m2/g)   孔体积(cm3/g)   平均柱状孔直径(nm)   大约BJH峰孔直径(nm)   48   559.00   0.427   3.10   10.00   49   568.00   0.410   2.90   10.00   50   564.00   0.436   3.10   10.00   51   443.00   0.306   2.80   8.00   52   543.00   0.425   3.10   10.00   53   612.00   0.491   3.20   8.00   54   574.00   0.461   3.20   8.00 Table 18 Inventive Examples or Comparative Examples Refractive index (after drying) Refractive index (after curing) Thickness () (after drying) Thickness () (after curing) Shrinkage % (after drying and curing) Dielectric constant k (room temperature) Dielectric constant k (outgassed) -Δk% 48 1.661 1.529 8518.23 8067.62 -5.29 2.48 2.18 -12.10 49 1.657 1.532 8057.8 7541.79 -6.40 2.51 2.42 -3.59 50 1.661 1.499 7225.37 7093.32 -1.83 2.54 2.44 -3.94 51 1.658 1.521 8659.18 8510.56 -1.72 2.51 2.43 -3.19 52 1.657 1.510 8025.79 7952.16 -0.92 2.53 2.43 -3.95 53 1.659 1.500 8633.55 7815.56 -9.47 2.42 2.33 -3.72 54 1.661 1.504 8899.51 8605.25 -3.31 2.42 2.35 -2.89 C 1.677 1.617 3152.00 3252.00 3.17 2.69 2.62 -2.60 Embodiment of the invention Surface area (m 2 /g) Pore volume (cm 3 /g) Average columnar pore diameter (nm) Approximate BJH peak pore diameter (nm) 48 559.00 0.427 3.10 10.00 49 568.00 0.410 2.90 10.00 50 564.00 0.436 3.10 10.00 51 443.00 0.306 2.80 8.00 52 543.00 0.425 3.10 10.00 53 612.00 0.491 3.20 8.00 54 574.00 0.461 3.20 8.00

发明实施例55-58-发明实施例18-21和对比实施例D的薄膜的制备Preparation of Films of Inventive Examples 55-58 - Inventive Examples 18-21 and Comparative Example D

在本领域技术人员已知的常规涂覆条件下,将发明实施例18-21的各种组合物施加于基体上,并使用发明实施例42的烘干和固化条件。对比实施例D按照类似于我们于2002年1月15日提交的美国系列号60/350,187的发明实施例的方式进行制备,因此不含任何成孔剂。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在下表19中给出,其中RI表示折射率。The various compositions of Inventive Examples 18-21 were applied to the substrate under conventional coating conditions known to those skilled in the art, and the drying and curing conditions of Inventive Example 42 were used. Comparative Example D was prepared in a manner similar to our inventive examples in US Serial No. 60/350,187, filed January 15, 2002, and thus did not contain any porogen. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The obtained layers were analyzed according to the above-mentioned test method, and the properties of the analyzed layers are given in Table 19 below, wherein RI represents the refractive index.

                                               表19   发明实施例或对比实施例     折射率(烘干后)     折射率(固化后)     (RI)(RI) 厚度()(烘干后) 厚度()(固化后)  收缩率%(烘干和固化后)   55     1.655     1.548     2.395 6800.55 6916.90  1.71   56     1.657     1.543     2.381 6814.10 6885.99  1.06   57     1.657     1.549     2.400 6792.82 6871.42  1.16   58     1.655     1.567     2.456 7520.50 7394.75  -1.67   D     1.677     1.617     2.615 3152.00 3252.00  3.17   发明实施例     表面积(m2/g)     孔体积(cm3/g)   平均柱状孔直径(nm)   大约BJH峰孔直径(nm)   57     476     0.31   2.60   16.00   56     464     0.307   2.60   14.00   57     468     0.297   2.50   20.00   58     429     0.275   2.60   20.00 Table 19 Inventive Examples or Comparative Examples Refractive index (after drying) Refractive index (after curing) (RI)(RI) Thickness () (after drying) Thickness () (after curing) Shrinkage % (after drying and curing) 55 1.655 1.548 2.395 6800.55 6916.90 1.71 56 1.657 1.543 2.381 6814.10 6885.99 1.06 57 1.657 1.549 2.400 6792.82 6871.42 1.16 58 1.655 1.567 2.456 7520.50 7394.75 -1.67 D. 1.677 1.617 2.615 3152.00 3252.00 3.17 Embodiment of the invention Surface area (m 2 /g) Pore volume (cm 3 /g) Average columnar pore diameter (nm) Approximate BJH peak pore diameter (nm) 57 476 0.31 2.60 16.00 56 464 0.307 2.60 14.00 57 468 0.297 2.50 20.00 58 429 0.275 2.60 20.00

发明实施例59-66-发明实施例24-30的薄膜的制备Inventive Examples 59-66 - Preparation of Films of Inventive Examples 24-30

在本领域技术人员已知的常规涂覆条件下,将发明实施例24-30的各种组合物施加于一基体上,并使用发明实施例42的烘干和固化条件。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在下表20中给出。The various compositions of Inventive Examples 24-30 were applied to a substrate under conventional coating conditions known to those skilled in the art, and the drying and curing conditions of Inventive Example 42 were used. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The obtained layers were analyzed according to the test methods described above, and the properties of the analyzed layers are given in Table 20 below.

所得结果表明包含苊和新戊酸乙烯酯共聚物的成孔剂的组合物的介电常数比包含苊和丙烯酸叔丁酯共聚物的成孔剂的组合物的低。The results obtained indicate that compositions comprising porogens of acenaphthene and vinyl pivalate copolymers have lower dielectric constants than compositions comprising porogens of acenaphthene and tert-butyl acrylate copolymers.

                                                                         表20   发明实施例   起始组合物:发明实施例   折射率(固化后)   收缩率%(烘干和固化后)   折射率2   介电常数k(室温)   介电常数k(脱气)   Δk%   表面积(m2/g)   孔体积(cm3/g)     平均柱状孔直径(nm)   大约BJH峰孔直径(nm)   59   26   1.45   16.36   2.10   2.13   2.09   1.88   594   0.651     4.4   11.0   60   27   1.41   11.26   1.99   2.1   2.06   1.90   622   0.698     4.5   14.0   61   28   1.41   8.28   1.99   2.11   2.07   1.90   600   0.697     4.6   12.0   62   29   1.41   9.15   2.00   2.09   2.05   1.91   614   0.696     4.5   11.0   63   30   1.40   5.7   1.95   2.06   2.02   1.94   577   0.738     5.1   16.0   64   31   1.54   25.16   2.36   2.48   2.42   2.42   581   0.389     2.7   没有峰   65   32   1.48   17.11   2.18   2.33   2.28   2.15   612   0.504     3.3   7.0   66   33   1.44   12.96   2.07   2.19   2.14   2.28   649   0.631     3.9   9.0 Table 20 Embodiment of the invention Starting Compositions: Inventive Examples Refractive index (after curing) Shrinkage % (after drying and curing) Refractive index 2 Dielectric constant k (room temperature) Dielectric constant k (outgassed) Δk% Surface area (m 2 /g) Pore volume (cm 3 /g) Average columnar pore diameter (nm) Approximate BJH peak pore diameter (nm) 59 26 1.45 16.36 2.10 2.13 2.09 1.88 594 0.651 4.4 11.0 60 27 1.41 11.26 1.99 2.1 2.06 1.90 622 0.698 4.5 14.0 61 28 1.41 8.28 1.99 2.11 2.07 1.90 600 0.697 4.6 12.0 62 29 1.41 9.15 2.00 2.09 2.05 1.91 614 0.696 4.5 11.0 63 30 1.40 5.7 1.95 2.06 2.02 1.94 577 0.738 5.1 16.0 64 31 1.54 25.16 2.36 2.48 2.42 2.42 581 0.389 2.7 no peak 65 32 1.48 17.11 2.18 2.33 2.28 2.15 612 0.504 3.3 7.0 66 33 1.44 12.96 2.07 2.19 2.14 2.28 649 0.631 3.9 9.0

发明实施例67-68-发明实施例31-32的薄膜的制备Inventive Examples 67-68 - Preparation of Films of Inventive Examples 31-32

在本领域技术人员已知的常规涂覆条件下,将发明实施例31-32的各种组合物施加于基体上,并使用发明实施例42的烘干和固化条件。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在下表21中给出,其中NM代表未测量,RI表示折射率。The various compositions of Inventive Examples 31-32 were applied to the substrate under conventional coating conditions known to those skilled in the art, and the drying and curing conditions of Inventive Example 42 were used. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The obtained layers were analyzed according to the above-mentioned test method, and the properties of the analyzed layers are given in Table 21 below, wherein NM represents not measured, and RI represents the refractive index.

改变成孔剂的用量重复上述步骤。表22的结果表明可选择具有某些热稳定性的成孔剂来得到某些所需的介电常数。在表22中RI表示折射率。Change the amount of pore forming agent and repeat the above steps. The results in Table 22 indicate that porogens with certain thermal stability can be selected to achieve certain desired dielectric constants. In Table 22, RI represents a refractive index.

                                        表21 Table 21

                                       表18 Table 18

  发明实施例或对比实施例 Inventive Examples or Comparative Examples     折射率(烘干后) Refractive index (after drying)     折射率(固化后) Refractive index (after curing)     (RI)(RI) (RI)(RI) 厚度()(烘干后) Thickness () (after drying)   厚度()(固化后) Thickness () (after curing)   收缩率%(烘干和固化后) Shrinkage % (after drying and curing)   67 67     1.581 1.581     1.570 1.570     2.466 2.466 10819 10819   6275.94 6275.94   -41.99 -41.99   68 68     NM NM     1.571 1.571     2.468 2.468 NM N M   NM NM   NM NM   发明实施例 Embodiment of the invention     表面积(m2/g)Surface area (m 2 /g)     孔体积(cm3/g)Pore volume (cm 3 /g)   平均柱状孔直径(nm) Average columnar pore diameter (nm)  大约BJH峰孔直径(nm) Approximate BJH peak pore diameter (nm)   67 67     462 462     0.25 0.25   2.2 2.2  非常小的4nm的峰 Very small 4nm peak   68 68     99 99     0.089 0.089   3.6 3.6  NM NM

                                         表22     成孔剂%     Mw     折射率(固化后)   (RI)(RI)     厚度改变%     介电常数k(脱气)     0     -     1.613   2.60     4     2.65     27     3000     1.543   2.41     -12     2.49     27     1250     1.568   2.46     -16     -     27     530     1.594   2.54     -19     2.58     35     3000     1.495   2.28     -17     2.44     35     1250     1.556   2.42     -22     2.40     50     300     1.465   2.15     -31     2.27     50     1250     1.497   2.24     -33     2.24 Table 22 Pore former% mw Refractive index (after curing) (RI)(RI) Thickness Change % Dielectric constant k (outgassed) 0 - 1.613 2.60 4 2.65 27 3000 1.543 2.41 -12 2.49 27 1250 1.568 2.46 -16 - 27 530 1.594 2.54 -19 2.58 35 3000 1.495 2.28 -17 2.44 35 1250 1.556 2.42 -twenty two 2.40 50 300 1.465 2.15 -31 2.27 50 1250 1.497 2.24 -33 2.24

发明实施例69-71-发明实施例33-35和对比实施例E的薄膜的制备Preparation of Films of Inventive Examples 69-71 - Inventive Examples 33-35 and Comparative Example E

在本领域技术人员已知的常规涂覆条件下,将发明实施例33-35的各种组合物施加于基体上,并使用发明实施例42的烘干和固化条件。对比实施例E按照类似于我们于2002年1月15日提交的美国系列号60/350,187的发明实施例的方式进行制备,因此不含本发明的成孔剂。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在下表23中给出。The various compositions of Inventive Examples 33-35 were applied to the substrate under conventional coating conditions known to those skilled in the art, and the drying and curing conditions of Inventive Example 42 were used. Comparative Example E was prepared in a manner similar to our inventive example in US Serial No. 60/350,187, filed January 15, 2002, and thus contained no porogen of the present invention. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The resulting layers were analyzed according to the above test methods, and the properties of the analyzed layers are given in Table 23 below.

                                 表23  性质   本发明实施例69   本发明实施例70   本发明实施例71  对比实施例E  折射率(固化后)   1.542   1.540   1.528  1.623  收缩率%(固化前)   16.5   20.4   12.3  5.6  k(室温)   2.58   2.58   2.48  2.73  k(脱气)   2.54   2.54   2.43  2.70  Δk%   1.42   1.51   2.09  1.17  平均孔径(nm)   15   15   33  15  孔体积(cm3/g)   0.323   0.364   0.392  0.257 Table 23 nature Embodiment 69 of the present invention Example 70 of the present invention Embodiment 71 of the present invention Comparative Example E Refractive index (after curing) 1.542 1.540 1.528 1.623 Shrinkage % (before curing) 16.5 20.4 12.3 5.6 k (room temperature) 2.58 2.58 2.48 2.73 k (degassed) 2.54 2.54 2.43 2.70 Δk% 1.42 1.51 2.09 1.17 Average pore size (nm) 15 15 33 15 Pore volume (cm 3 /g) 0.323 0.364 0.392 0.257

发明实施例72-77-发明实施例38-41和对比实施例F的薄膜的制备Preparation of Films of Inventive Examples 72-77 - Inventive Examples 38-41 and Comparative Example F

在本领域技术人员已知的常规涂覆条件下,将发明实施例38-41的各种组合物施加于基体上,并使用发明实施例42的烘干和固化条件。对比实施例F按照类似于我们于2002年1月15日提交的美国系列号60/350,187的发明实施例的方式进行制备,因此不含本发明的成孔剂。在每种组合物中,成孔剂发生分解并且分解的成孔剂挥发从而在组合物中形成孔。按照上述测试方法分析所得各层,分析得到层性质在下表24中给出,其中NM表示没有测量而RI表示折射率。The various compositions of Inventive Examples 38-41 were applied to the substrate under conventional coating conditions known to those skilled in the art, and the drying and curing conditions of Inventive Example 42 were used. Comparative Example F was prepared in a manner similar to our inventive examples in US Serial No. 60/350,187, filed January 15, 2002, and thus did not contain the porogen of the present invention. In each composition, the porogen decomposes and the decomposed porogen volatilizes to form pores in the composition. The resulting layers were analyzed according to the test methods described above, and the properties of the analyzed layers are given in Table 24 below, where NM means not measured and RI means refractive index.

                                                             表24   发明实施例或对比实施例     折射率(烘干后)     折射率(固化后)     (RI)(RI)   厚度()(烘干后)   厚度()(固化后)   收缩率%(烘干和固化后)   介电常数k(室温)   介电常数k(脱气)     -Δk%   72     1.592     1.549     2.400   10000.36   5980.85   -40.19   2.75   2.61     -5.09   73     NM     1.545     2.387   NM   NM   NM   NM   2.62     -3.16   74     1.595     1.565     2.450   7815.35   4632.49   -40.73   2.78   2.66     -4.32   75     1.601     1.561     2.435   2927.49   1757.16   -39.98   2.76   2.65     -3.99   76     1.603     1.524     2.322   2781.52   1798.23   -35.35   2.53   2.45     -3.16   77     1.603     1.523     2.320   2752.07   1787.38   -35.05   2.60   2.51     -3.46   F     1.677     1.617     -   3152.00   3252.00   3.17   2.69   2.62     -2.60     发明实施例     表面积(m2/g)     孔体积(cm3/g)   平均柱状孔直径(nm)  大约BJH峰孔直径(nm)     72     507     0.2683   2.1  5nm小峰     73     483     0.23   1.9  20nm宽峰     74     486     0.238   2.0  17nm非常小峰     75     482     0.251   2.1  18nm非常小峰     76     570     0.394   2.8  8nm小峰     77     550     0.371   2.7  7nm小峰 Table 24 Inventive Examples or Comparative Examples Refractive index (after drying) Refractive index (after curing) (RI)(RI) Thickness () (after drying) Thickness () (after curing) Shrinkage % (after drying and curing) Dielectric constant k (room temperature) Dielectric constant k (outgassed) -Δk% 72 1.592 1.549 2.400 10000.36 5980.85 -40.19 2.75 2.61 -5.09 73 N M 1.545 2.387 N M N M N M N M 2.62 -3.16 74 1.595 1.565 2.450 7815.35 4632.49 -40.73 2.78 2.66 -4.32 75 1.601 1.561 2.435 2927.49 1757.16 -39.98 2.76 2.65 -3.99 76 1.603 1.524 2.322 2781.52 1798.23 -35.35 2.53 2.45 -3.16 77 1.603 1.523 2.320 2752.07 1787.38 -35.05 2.60 2.51 -3.46 f 1.677 1.617 - 3152.00 3252.00 3.17 2.69 2.62 -2.60 Embodiment of the invention Surface area (m 2 /g) Pore volume (cm 3 /g) Average columnar pore diameter (nm) Approximate BJH peak pore diameter (nm) 72 507 0.2683 2.1 5nm small peak 73 483 0.23 1.9 20nm broad peak 74 486 0.238 2.0 17nm very small peak 75 482 0.251 2.1 18nm very small peak 76 570 0.394 2.8 8nm small peak 77 550 0.371 2.7 7nm small peak

发明实施例78Invention Example 78

将从制备4分离出的1,3/4-双{1′,3′,5′-三[3″/4″-(苯乙炔基)苯基]C10金刚烷-7′-基}苯(图1F所示)与增粘剂和成孔剂混合,随后溶解于溶剂中,旋涂至硅晶片上,接着烘干至固化成膜,在微型芯片或多片组件中使用。The 1,3/4-bis{1′,3′,5′-tris[3″/4″-(phenylethynyl)phenyl]C 10 adamantane-7′-yl} isolated from Preparation 4 Benzene (shown in Figure 1F) is mixed with adhesion promoters and porogens, then dissolved in a solvent, spin-coated onto silicon wafers, and then dried to cure to form a film for use in microchips or multi-chip assemblies.

发明实施例79Invention Example 79

将从制备5分离出的1,3-双{3′/4′-[1″,3″,5″-三[3/4-(苯乙炔基)苯基]C10金刚烷-7″-基]苯基}-5,7-双[3″″/4″″-(苯乙炔基)苯基]C10金刚烷(图1F所示)与增粘剂和成孔剂混合,随后溶解于溶剂中,旋涂至硅晶片上,接着烘干至固化成膜,在微型芯片或多片组件中使用。The 1,3-bis{3′/4′-[1″,3″,5″-tris[3/4-(phenylethynyl)phenyl]C 10 adamantane isolated from Preparation 5- 7″-yl]phenyl}-5,7-bis[3″″/4″″-(phenylethynyl)phenyl] C10adamantane (shown in Figure 1F) mixed with tackifier and pore former , then dissolved in a solvent, spin-coated on a silicon wafer, and then dried until solidified to form a film, which can be used in microchips or multi-chip assemblies.

Claims (61)

1.一种组合物,所述组合物包括:1. A composition comprising: (a)介电材料;和(a) dielectric materials; and (b)成孔剂,所述成孔剂包括至少两个稠合芳环,其中所述稠合芳环上各自具有至少一个烷基取代基且在相邻芳环上的至少两个所述烷基取代基间存在键。(b) a porogen comprising at least two fused aromatic rings, wherein each of the fused aromatic rings has at least one alkyl substituent and at least two of the alkyl substituents on adjacent aromatic rings A bond exists between the alkyl substituents. 2.权利要求1的组合物,其中所述成孔剂选自未官能化的聚苊均聚物、官能化的聚苊均聚物、聚苊共聚物、聚(2-乙烯基萘)和乙烯基蒽以及它们彼此的共混物。2. The composition of claim 1, wherein said porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymers, functionalized polyacenaphthylene homopolymers, polyacenaphthylene copolymers, poly(2-vinylnaphthalene) and Vinyl anthracene and their blends with each other. 3.权利要求2的组合物,其中所述成孔剂为所述由苊和选自以下的单体制备的聚苊共聚物:新戊酸乙烯酯、丙烯酸叔丁酯、苯乙烯、α-甲基苯乙烯、叔丁基苯乙烯、2-乙烯基萘、5-乙烯基-2-降冰片烯、乙烯基环己酮、乙烯基环戊烷、9-乙烯基蒽、4-乙烯基联苯、四苯基丁二烯、1,2-二苯乙烯、叔丁基1,2-二苯乙烯、茚、烯丙基取代的氢聚碳硅烷、乙酸乙烯酯、丙烯酸甲酯、甲基丙烯酸甲酯和乙烯基醚。3. The composition of claim 2, wherein said porogen is said polyacenaphthene copolymer prepared from acenaphthene and a monomer selected from the group consisting of vinyl pivalate, tert-butyl acrylate, styrene, α- Methylstyrene, tert-butylstyrene, 2-vinylnaphthalene, 5-vinyl-2-norbornene, vinylcyclohexanone, vinylcyclopentane, 9-vinylanthracene, 4-vinyl Biphenyl, tetraphenylbutadiene, 1,2-stilbene, tert-butyl 1,2-stilbene, indene, allyl-substituted hydropolycarbosilane, vinyl acetate, methyl acrylate, methyl methyl acrylate and vinyl ether. 4.权利要求2的组合物,其中所述成孔剂选自未官能化的聚苊均聚物、官能化的聚苊均聚物、聚苊共聚物,以及未官能化的聚苊均聚物和聚己内酯的共混物。4. The composition of claim 2, wherein the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymers, functionalized polyacenaphthylene homopolymers, polyacenaphthylene copolymers, and unfunctionalized polyacenaphthylene homopolymers. A blend of poly(caprolactone) and poly(caprolactone). 5.权利要求2或3的组合物,其中所述介电材料为有机介电材料。5. The composition of claim 2 or 3, wherein the dielectric material is an organic dielectric material. 6.权利要求5的组合物,其中所述介电材料为苯乙炔基化的芳族单体或低聚物。6. The composition of claim 5, wherein the dielectric material is a phenylethynylated aromatic monomer or oligomer. 7.权利要求5的组合物,其中所述有机介电材料为笼形化合物,优选C10金刚烷。7. The composition of claim 5, wherein the organic dielectric material is a clathrate, preferably a C10 adamantane. 8.一种旋涂前体,所述旋涂前体包括权利要求5的所述组合物。8. A spin coating precursor comprising the composition of claim 5. 9.一种热固性基体,所述基体由权利要求8的旋涂前体制备。9. A thermoset substrate prepared from the spin-on precursor of claim 8. 10.一种层,所述层包括权利要求9的所述热固性基体。10. A layer comprising the thermoset matrix of claim 9. 11.权利要求10的层,其中所述热固性基体经过固化。11. The layer of claim 10, wherein the thermoset matrix is cured. 12.一种使用权利要求5的所述组合物的方法。12. A method of using the composition of claim 5. 13.权利要求12的方法,所述方法包括以下步骤:13. The method of claim 12, said method comprising the steps of: 使所述成孔剂分解;和decomposing the porogen; and 将所述已分解的成孔剂挥发,由此降低所述介电材料的介电常数。The decomposed porogen is volatilized, thereby lowering the dielectric constant of the dielectric material. 14.权利要求12的方法,所述方法包括以下步骤:14. The method of claim 12, said method comprising the steps of: 使所述成孔剂分解;和decomposing the porogen; and 将所述已分解的成孔剂挥发,由此在所述介电材料中形成孔。The decomposed porogen is volatilized, thereby forming pores in the dielectric material. 15.权利要求13的方法,其中所述分解所述成孔剂的步骤包括通过熔炉、电热板、电子束辐射、微波辐射或紫外辐射进行固化。15. The method of claim 13, wherein said step of decomposing said porogen comprises curing by means of a furnace, a hot plate, electron beam radiation, microwave radiation, or ultraviolet radiation. 16.权利要求14的方法,其中所述分解所述成孔剂的步骤包括通过熔炉、电热板、电子束辐射、微波辐射或紫外辐射进行固化。16. The method of claim 14, wherein said step of decomposing said porogen comprises curing by means of a furnace, a hot plate, electron beam radiation, microwave radiation, or ultraviolet radiation. 17.一种组合物,所述组合物包含介电常数小于2.7的笼形结构。17. A composition comprising a cage structure having a dielectric constant of less than 2.7. 18.权利要求17的组合物,其中所述笼形结构为C10金刚烷。18. The composition of claim 17, wherein the cage structure is C10 adamantane. 19.一种旋涂前体,所述旋涂前体包括权利要求18的所述组合物。19. A spin-on-coating precursor comprising the composition of claim 18. 20.一种热固性基体,所述基体由权利要求19的所述旋涂前体制备。20. A thermoset substrate prepared from the spin-on precursor of claim 19. 21.一种层,所述层包括权利要求20的所述热固性基体。21. A layer comprising the thermoset matrix of claim 20. 22.权利要求21的层,其中所述热固性基体经过固化。22. The layer of claim 21, wherein said thermoset matrix is cured. 23.一种组合物,所述组合物包括:23. A composition comprising: (a)热固性组分,所述热固性组分包括:(1)任选至少一种式I的单体(a) a thermosetting component comprising: (1) optionally at least one monomer of formula I 和(2)至少一种式II的低聚物或聚合物and (2) at least one oligomer or polymer of formula II 其中所述E是笼形化合物;每个所述Q相同或不同并选自氢、芳基、支化芳基和取代芳基,其中所述取代基包括氢、卤素、烷基、芳基、取代芳基、杂芳基、芳醚、链烯基、炔基、烷氧基、羟烷基,羟芳基,羟链烯基、羟炔基、羟基或羧基;所述Gw是芳基或取代芳基,其中所述取代基包括卤素和烷基;所述h为0-10;i为0-10;j为0-10;w为0或1;Wherein said E is a clathrate compound; each said Q is the same or different and is selected from hydrogen, aryl, branched aryl and substituted aryl, wherein said substituents include hydrogen, halogen, alkyl, aryl, Substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy or carboxyl; said G is aryl Or substituted aryl, wherein said substituent includes halogen and alkyl; said h is 0-10; i is 0-10; j is 0-10; w is 0 or 1; (b)成孔剂。(b) Porogens. 24.权利要求23的组合物,其中所述成孔剂包括分解温度低于所述热固性组分(a)的玻璃化转变温度并高于所述热固性组分(a)的固化温度的材料。24. The composition of claim 23, wherein said porogen comprises a material having a decomposition temperature below the glass transition temperature of said thermosetting component (a) and above the curing temperature of said thermosetting component (a). 25.权利要求24的组合物,其中所述成孔剂包含至少两个稠合芳环,其中所述稠合芳环上各自具有至少一个烷基取代基,并且在相邻芳环上的至少两个所述烷基取代基间存在键。25. The composition of claim 24, wherein said porogen comprises at least two fused aromatic rings, wherein each of said fused aromatic rings has at least one alkyl substituent, and at least one alkyl substituent on adjacent aromatic rings A bond exists between two of said alkyl substituents. 26.权利要求24的组合物,其中所述成孔剂选自未官能化的聚苊均聚物、官能化的聚苊均聚物、聚苊共聚物、聚降冰片烯、聚己内酯、聚(2-乙烯基萘)、乙烯基蒽、聚苯乙烯、聚苯乙烯衍生物、聚硅氧烷、聚酯、聚醚、聚丙烯酸酯、脂族聚碳酸酯、聚砜、聚交酯和它们的共混物。26. The composition of claim 24, wherein said porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthene copolymer, polynorbornene, polycaprolactone , poly(2-vinylnaphthalene), vinylanthracene, polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polycross Esters and their blends. 27.权利要求26的组合物,其中所述成孔剂为所述由苊和选自以下的单体制备的苊共聚物:新戊酸乙烯酯、丙烯酸叔丁酯、苯乙烯、α-甲基苯乙烯、叔丁基苯乙烯、2-乙烯基萘、5-乙烯基-2-降冰片烯、乙烯基环己酮、乙烯基环戊烷、9-乙烯基蒽、4-乙烯基联苯、四苯基丁二烯、1,2-二苯乙烯、叔丁基1,2-二苯乙烯、茚、烯丙基取代的氢聚碳硅烷、乙酸乙烯酯、丙烯酸甲酯、甲基丙烯酸甲酯和乙烯基醚。27. The composition of claim 26, wherein said porogen is said acenaphthene copolymer prepared from acenaphthene and a monomer selected from the group consisting of vinyl pivalate, tert-butyl acrylate, styrene, alpha-formaldehyde Styrene, tert-butylstyrene, 2-vinylnaphthalene, 5-vinyl-2-norbornene, vinylcyclohexanone, vinylcyclopentane, 9-vinylanthracene, 4-vinylbis Benzene, tetraphenylbutadiene, stilbene, tert-butyl stilbene, indene, allyl substituted hydropolycarbosilane, vinyl acetate, methyl acrylate, methyl Methyl acrylate and vinyl ether. 28.权利要求24的组合物,其中所述成孔剂选自未官能化的聚苊均聚物、官能化的聚苊均聚物、聚苊共聚物、聚降冰片烯和聚己内酯。28. The composition of claim 24, wherein the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymers, functionalized polyacenaphthylene homopolymers, polyacenaphthylene copolymers, polynorbornenes, and polycaprolactones . 29.权利要求26的组合物,所述组合物包括(1)所述式III的至少一种C10金刚烷单体29. The composition of claim 26 comprising (1) at least one C 10 adamantane monomer of formula III 和(2)所述式IV的至少一种C10金刚烷低聚物或聚合物and (2) at least one C 10 adamantane oligomer or polymer of formula IV 或(1)所述式V的至少一种C14金刚烷单体Or (1) at least one C 14 adamantane monomer of formula V
Figure A038059380006C2
Figure A038059380006C2
和(2)所述式VI的至少一种C14金刚烷低聚物或聚合物and (2) at least one C adamantane oligomer or polymer of formula VI
30.权利要求29的组合物,其中所述至少一种低聚物或聚合物(2)为式VII的C10金刚烷二聚体30. The composition of claim 29, wherein said at least one oligomer or polymer (2) is a C 10 adamantane dimer of formula VII
Figure A038059380007C2
Figure A038059380007C2
31.权利要求29的组合物,其中所述至少一种低聚物或聚合物(2)为下式VIII的C10金刚烷三聚体31. The composition of claim 29, wherein said at least one oligomer or polymer (2) is a C10 adamantane trimer of the following formula VIII 32.权利要求26的组合物,其中所述热固性组分(a)包括(1)以下各式的C10金刚烷单体:32. The composition of claim 26, wherein said thermosetting component (a) comprises (1) a C10 adamantane monomer of the formula: 式XAFormula XA
Figure A038059380008C1
Figure A038059380008C1
式XBFormula XB 式XCFormula XC
Figure A038059380008C3
Figure A038059380008C3
或式XDor XD 和(2)式XI的C10金刚烷低聚物或聚合物and (2) the C adamantane oligomer or polymer of formula XI 或(1)以下各式的C14金刚烷单体:Or (1) C of the following formulas 14 adamantane monomers: 式XIIAFormula XIIA
Figure A038059380010C1
Figure A038059380010C1
式XIIBFormula XIIB
Figure A038059380010C2
Figure A038059380010C2
式XIICFormula XIIC 或式XIIDor Formula XIID 和(2)式XIII的C14金刚烷低聚物或聚合物,and (2) C adamantane oligomers or polymers of formula XIII, 其中所述h为0-10;所述i为0-10;所述j为0-10;所述R1各自相同或不同并选自氢、卤素、烷基、芳基、取代芳基、杂芳基、芳醚、链烯基、炔基、烷氧基、羟烷基、羟芳基、羟链烯基、羟炔基、羟基或羧基;所述Y各自相同或不同并选自氢、烷基、芳基、取代芳基或卤素。Wherein said h is 0-10; said i is 0-10; said j is 0-10; said R 1 are each the same or different and selected from hydrogen, halogen, alkyl, aryl, substituted aryl, Heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy or carboxyl; said Y are each the same or different and are selected from hydrogen , alkyl, aryl, substituted aryl or halogen.
33.权利要求32的组合物,其中存在所述单体。33. The composition of claim 32, wherein said monomer is present. 34.权利要求32或33的组合物,其中所述R1为芳基或取代芳基和所述Y为氢、苯基或联苯基。34. The composition of claim 32 or 33, wherein said R 1 is aryl or substituted aryl and said Y is hydrogen, phenyl or biphenyl. 35.权利要求34的组合物,其中所述(2)C10金刚烷低聚物或聚合物为式XVI的二聚体35. The composition of claim 34, wherein said (2) C 10 adamantane oligomer or polymer is a dimer of formula XVI
Figure A038059380012C2
Figure A038059380012C2
或所述(2)C14金刚烷低聚物或聚合物为式XVII的二聚体Or the (2) C 14 adamantane oligomer or polymer is a dimer of formula XVII
Figure A038059380013C1
Figure A038059380013C1
36.权利要求34的组合物,其中所述(2)C10金刚烷低聚物或聚合物为式XVIII的三聚体36. The composition of claim 34, wherein said (2) C 10 adamantane oligomer or polymer is a trimer of formula XVIII
Figure A038059380013C2
Figure A038059380013C2
或所述(2)C14金刚烷低聚物或聚合物为式XIX的三聚体Or the (2) C 14 adamantane oligomer or polymer is a trimer of formula XIX
Figure A038059380014C1
Figure A038059380014C1
37.权利要求34的组合物,其中所述热固性组分(a)、所述低聚物或聚合物(2)包括式XVI的C10金刚烷二聚体和式XVIII的C10金刚烷三聚体的混合物37. The composition of claim 34, wherein said thermosetting component (a), said oligomer or polymer (2) comprises a C 10 adamantane dimer of formula XVI and a C 10 adamantane tris of formula XVIII polymer mixture 式XVIFormula XVI
Figure A038059380014C2
Figure A038059380014C2
式XVIIIFormula XVIII 或式XVII的C14金刚烷二聚体和式XIX的C14金刚烷三聚体的混合物or a mixture of a C adamantane dimer of formula XVII and a C adamantane trimer of formula XIX 式XVIIFormula XVII 式XIXFormula XIX
Figure A038059380016C1
Figure A038059380016C1
38.权利要求37的组合物,其中所述热固性组分(a)、所述单体(1)和所述低聚物或聚合物(2)为C10金刚烷基单体。38. The composition of claim 37, wherein said thermosetting component (a), said monomer (1) and said oligomer or polymer (2) are C10 adamantyl monomers. 39.权利要求38的组合物,其中位于所述苯基上的所述R1C≡C基团的至少两个为两种不同的异构体和位于所述C10金刚烷单体的两个桥头碳原子间的所述苯基的至少一个存在两种不同的异构体。39. The composition of claim 38, wherein at least two of said R 1 C≡C groups on said phenyl are two different isomers and two of said C 10 adamantane monomers are two different isomers. There are two different isomers of at least one of the phenyl groups between the bridgehead carbon atoms. 40.权利要求39的组合物,其中所述至少两种异构体为间位和对位异构体。40. The composition of claim 39, wherein said at least two isomers are meta and para isomers. 41.权利要求34的组合物,所述组合物还包括(c)增粘剂,所述增粘剂包括具有至少双官能团的化合物,其中所述双官能团可相同或不同,并且所述双官能团的第一个能与所述热固性组分(a)相互作用,第二个官能团能与施加所述组合物于其上的基材相互作用。41. The composition of claim 34, said composition also comprising (c) a tackifier, said tackifier comprising a compound having at least a bifunctional group, wherein said bifunctional groups may be the same or different, and said bifunctional group The first functional group is capable of interacting with said thermosetting component (a) and the second functional group is capable of interacting with the substrate on which said composition is applied. 42.权利要求41的组合物,其中所述增粘剂选自:42. The composition of claim 41, wherein the tackifier is selected from the group consisting of: 式XXXVI的硅烷:(R2)k(R3)lSi(R4)m(R5)n,其中R2、R3、R4和R5各自独立表示氢、羟基、不饱和或饱和烷基、取代或未取代烷基,其中取代基是氨基或环氧基、不饱和或饱和烷氧基、不饱和或饱和羧基、或芳基,所述R2、R3、R4和R5中至少两个表示氢、羟基、饱和或不饱和烷氧基、不饱和烷基或不饱和羧基,和k+l+m+n≤4;Silanes of formula XXXVI: (R 2 ) k (R 3 ) l Si(R 4 ) m (R 5 ) n , wherein R 2 , R 3 , R 4 and R 5 each independently represent hydrogen, hydroxyl, unsaturated or saturated Alkyl, substituted or unsubstituted alkyl, wherein the substituent is amino or epoxy, unsaturated or saturated alkoxy, unsaturated or saturated carboxy, or aryl, the R 2 , R 3 , R 4 and R At least two of 5 represent hydrogen, hydroxyl, saturated or unsaturated alkoxy, unsaturated alkyl or unsaturated carboxyl, and k+l+m+n≤4; 式XXXVII的聚碳硅烷:Polycarbosilanes of formula XXXVII:
Figure A038059380017C1
Figure A038059380017C1
其中R8、R14和R17各自独立表示取代或未取代亚烷基、亚环烷基、1,2-亚乙烯基、亚烯丙基或亚芳基;R9、R10、R11、R12、R15和R16各自独立表示氢原子,或烷基、亚烷基、乙烯基、环烷基、烯丙基或芳基的有机基团,这些基团可为线形或支化;R13表示有机硅、甲硅烷基、甲硅烷氧基或有机基团;和p、q、r和s满足条件[4≤p+q+r+s≤100,000],和q、r和s可全部或分别为0;Wherein R 8 , R 14 and R 17 each independently represent a substituted or unsubstituted alkylene group, cycloalkylene group, 1,2-vinylene group, allyl group or arylene group; R 9 , R 10 , R 11 , R 12 , R 15 and R 16 each independently represent a hydrogen atom, or an organic group of alkyl, alkylene, vinyl, cycloalkyl, allyl or aryl, and these groups can be linear or branched ; R 13 represents organosilicon, silyl, siloxy or organic group; and p, q, r and s satisfy the condition [4≤p+q+r+s≤100,000], and q, r and s Can be all or 0 respectively; 缩水甘油醚或具有至少一个羧基的不饱和羧酸酯;Glycidyl ethers or unsaturated carboxylic acid esters having at least one carboxyl group; 乙烯基环状低聚物或聚合物,其中环状基团是乙烯基、芳族化合物或杂芳环化合物;和Vinyl cyclic oligomers or polymers, wherein the cyclic group is vinyl, aromatic or heteroaromatic; and 酚醛树脂或式XXXVIII的低聚物:-[R18C6H2(OH)(R19)]u-,其中R18是取代或未取代亚烷基、亚环烷基、乙烯基、烯丙基或芳基,R19是烷基、亚烷基、1,2-亚乙烯基、亚环烷基、亚烯丙基或芳基,和u=3-100。Phenolic resins or oligomers of formula XXXVIII: -[R 18 C 6 H 2 (OH)(R 19 )] u -, wherein R 18 is substituted or unsubstituted alkylene, cycloalkylene, vinyl, alkenyl Propyl or aryl, R 19 is alkyl, alkylene, 1,2-vinylene, cycloalkylene, allylylene or aryl, and u=3-100.
43.权利要求42的组合物,其中所述增粘剂(c)是所述酚醛树脂或低聚物。43. The composition of claim 42, wherein said tackifier (c) is said phenolic resin or oligomer. 44.一种旋涂前体,所述旋涂前体包括权利要求41的所述组合物和溶剂,优选环己酮。44. A spin coating precursor comprising the composition of claim 41 and a solvent, preferably cyclohexanone. 45.一种热固性基体,所述基体由权利要求44的旋涂前体制备。45. A thermoset substrate prepared from the spin-on precursor of claim 44. 46.一种层,所述层包括权利要求45的所述热固性基体。46. A layer comprising the thermoset matrix of claim 45. 47.权利要求46的层,其中所述热固性基体经过固化。47. The layer of claim 46, wherein said thermoset matrix is cured. 48.权利要求46的层,其中所述层的介电常数小于2.7,优选小于2.5,更优选小于2.2并最优选小于2.0。48. The layer of claim 46, wherein said layer has a dielectric constant of less than 2.7, preferably less than 2.5, more preferably less than 2.2 and most preferably less than 2.0. 49.权利要求46的层,其中所述层的平均孔径小于20纳米。49. The layer of claim 46, wherein the layer has an average pore size of less than 20 nanometers. 50.一种基体,所述基体上具有至少一层权利要求46的所述层。50. A substrate having at least one said layer of claim 46 thereon. 51.一种微型芯片,所述微型芯片包括权利要求50的所述基体。51. A microchip comprising the substrate of claim 50. 52.一种组合物,所述组合物包括:52. A composition comprising: (a)具有至少双官能团的化合物,其中所述双官能团可相同或不同,并且所述第一官能团和第二官能团中的至少一个选自含硅基团、含氮基团、含碳氧键基团、羟基和含碳碳双键基团;和(a) a compound having at least two functional groups, wherein the two functional groups may be the same or different, and at least one of the first functional group and the second functional group is selected from a silicon-containing group, a nitrogen-containing group, a carbon-oxygen bond groups, hydroxyl groups, and groups containing carbon-carbon double bonds; and (b)包含至少两个稠合芳环的成孔剂,其中所述稠合芳环上各自具有至少一个烷基取代基且在相邻芳环上的至少两个所述烷基取代基间存在键。(b) A porogen comprising at least two fused aromatic rings, wherein each of the fused aromatic rings has at least one alkyl substituent and between at least two of the alkyl substituents on adjacent aromatic rings key exists. 53.权利要求52的组合物,其中所述成孔剂选自未官能化的聚苊均聚物、官能化的聚苊均聚物、聚苊共聚物、聚(2-乙烯基萘)、乙烯基蒽以及它们彼此的共混物。53. The composition of claim 52, wherein the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymers, functionalized polyacenaphthylene homopolymers, polyacenaphthylene copolymers, poly(2-vinylnaphthalene), Vinyl anthracene and their blends with each other. 54.权利要求53的组合物,其中所述成孔剂为所述由苊和选自以下的单体制备的聚苊共聚物:新戊酸乙烯酯、丙烯酸叔丁酯、苯乙烯、α-甲基苯乙烯、叔丁基苯乙烯、2-乙烯基萘、5-乙烯基-2-降冰片烯、乙烯基环己酮、乙烯基环戊烷、9-乙烯基蒽、4-乙烯基联苯、四苯基丁二烯、1,2-二苯乙烯、叔丁基1,2-二苯乙烯、茚、烯丙基取代的氢聚碳硅烷、乙酸乙烯酯、丙烯酸甲酯、甲基丙烯酸甲酯和乙烯基醚。54. The composition of claim 53, wherein said porogen is said polyacenaphthene copolymer prepared from acenaphthene and a monomer selected from the group consisting of vinyl pivalate, tert-butyl acrylate, styrene, alpha- Methylstyrene, tert-butylstyrene, 2-vinylnaphthalene, 5-vinyl-2-norbornene, vinylcyclohexanone, vinylcyclopentane, 9-vinylanthracene, 4-vinyl Biphenyl, tetraphenylbutadiene, 1,2-stilbene, tert-butyl 1,2-stilbene, indene, allyl-substituted hydropolycarbosilane, vinyl acetate, methyl acrylate, methyl methyl acrylate and vinyl ether. 55.权利要求54的组合物,其中所述增粘剂选自:55. The composition of claim 54, wherein the tackifier is selected from the group consisting of: 式XXXVI的硅烷:(R2)k(R3)lSi(R4)m(R5)m,其中R2、R3、R4和R5各自独立表示氢、羟基、不饱和或饱和烷基、取代或未取代烷基,其中取代基是氨基或环氧基、不饱和或饱和烷氧基、不饱和或饱和羧基或芳基,所述R2、R3、R4和R5中至少两个表示氢、羟基、饱和或不饱和烷氧基、不饱和烷基或不饱和羧基,和k+l+m+n≤4;Silanes of formula XXXVI: (R 2 ) k (R 3 ) l Si(R 4 ) m (R 5 ) m , wherein R 2 , R 3 , R 4 and R 5 each independently represent hydrogen, hydroxyl, unsaturated or saturated Alkyl, substituted or unsubstituted alkyl, wherein the substituent is amino or epoxy, unsaturated or saturated alkoxy, unsaturated or saturated carboxy or aryl, the R 2 , R 3 , R 4 and R 5 At least two of them represent hydrogen, hydroxyl, saturated or unsaturated alkoxy, unsaturated alkyl or unsaturated carboxyl, and k+l+m+n≤4; 式XXXVII的聚碳硅烷:Polycarbosilanes of formula XXXVII:
Figure A038059380019C1
Figure A038059380019C1
其中R8、R14和R17各自独立表示取代或未取代亚烷基、亚环烷基、1,2-亚乙烯基、亚烯丙基或亚芳基;R9、R10、R11、R12、R15和R16各自独立表示氢原子,或烷基、亚烷基、乙烯基、环烷基、烯丙基或芳基的有机基团,这些基团可为线形或支化;R13表示有机硅、甲硅烷基、甲硅烷氧基或有机基团;和p、q、r和s满足条件[4≤p+q+r+s≤100,000],和q、r和s可全部或分别为0;Wherein R 8 , R 14 and R 17 independently represent substituted or unsubstituted alkylene, cycloalkylene, 1,2-vinylene, allyl or arylene; R 9 , R 10 , R 11 , R 12 , R 15 and R 16 each independently represent a hydrogen atom, or an organic group of alkyl, alkylene, vinyl, cycloalkyl, allyl or aryl, and these groups can be linear or branched ; R 13 represents organosilicon, silyl, siloxy or organic group; and p, q, r and s satisfy the condition [4≤p+q+r+s≤100,000], and q, r and s Can be all or 0 respectively; 缩水甘油醚或具有至少一个羧基的不饱和羧酸酯;Glycidyl ethers or unsaturated carboxylic acid esters having at least one carboxyl group; 乙烯基环状低聚物或聚合物,其中环状基团是乙烯基、芳族化合物或杂芳环化合物;和Vinyl cyclic oligomers or polymers, wherein the cyclic group is vinyl, aromatic or heteroaromatic; and 酚醛树脂或式XXXVIII的低聚物:-[R18C6H2(OH)(R19)]u-,其中R18是取代或未取代亚烷基、亚环烷基、乙烯基、烯丙基或芳基,R19是烷基、亚烷基、1,2-亚乙烯基、亚环烷基、亚烯丙基或芳基,和u=3-100。Phenolic resins or oligomers of formula XXXVIII: -[R 18 C 6 H 2 (OH)(R 19 )] u -, wherein R 18 is substituted or unsubstituted alkylene, cycloalkylene, vinyl, alkenyl Propyl or aryl, R 19 is alkyl, alkylene, 1,2-vinylene, cycloalkylene, allylylene or aryl, and u=3-100.
56.权利要求55的组合物,其中所述增粘剂(c)是所述酚醛树脂或低聚物。56. The composition of claim 55, wherein said tackifier (c) is said phenolic resin or oligomer. 57.权利要求55的组合物,其中所述化合物(a)和所述成孔剂(b)相互作用。57. The composition of claim 55, wherein said compound (a) and said porogen (b) interact. 58.权利要求55的组合物,所述组合物还包含介电材料。58. The composition of claim 55, further comprising a dielectric material. 59.一种组合物,所述组合物包括:59. A composition comprising: (a)热固性组分,包括至少两种不同的式XXVII的异构体的混合物(a) a thermosetting component comprising a mixture of at least two different isomers of formula XXVII 其中所述E是笼形化合物;每个所述Q相同或不同并选自氢、芳基、支化芳基和取代芳基,其中所述取代基包括氢、卤素、烷基、芳基、取代芳基、杂芳基、芳醚、链烯基、炔基、烷氧基、羟烷基,羟芳基,羟链烯基、羟炔基、羟基或羧基;所述Gw是芳基或取代芳基,其中所述取代基包括卤素和烷基;所述h为0-10;i为0-10;j为0-10;w为0或1;和Wherein said E is a clathrate compound; each said Q is the same or different and is selected from hydrogen, aryl, branched aryl and substituted aryl, wherein said substituents include hydrogen, halogen, alkyl, aryl, Substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy or carboxyl; said G is aryl Or substituted aryl, wherein said substituent includes halogen and alkyl; said h is 0-10; i is 0-10; j is 0-10; w is 0 or 1; and (b)成孔剂。(b) Porogens. 60.权利要求59的组合物,其中所述混合物包括至少两种不同的式XXVIII、式XXIX或式XXX的异构体:60. The composition of claim 59, wherein said mixture comprises at least two different isomers of formula XXVIII, formula XXIX or formula XXX: 式XXVIIFormula XXVII
Figure A038059380020C2
Figure A038059380020C2
式XXIXFormula XXIX
Figure A038059380020C3
Figure A038059380020C3
式XXXFormula XXX
Figure A038059380021C1
Figure A038059380021C1
其中每个所述Y相同或不同并选自氢、烷基、芳基、取代芳基或卤素和每个所述R1相同或不同并选自氢、卤素、烷基、芳基、取代芳基、杂芳基、芳醚、链烯基、炔基、烷氧基、羟烷基、羟芳基、羟链烯基、羟炔基、羟基或羧基。Wherein each said Y is the same or different and is selected from hydrogen, alkyl, aryl, substituted aryl or halogen and each of said R is the same or different and is selected from hydrogen, halogen, alkyl, aryl, substituted aryl radical, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy or carboxyl.
61.权利要求59的组合物,其中所述混合物包括至少两种不同的式XXXI、式XXXII、式XXXIII或式XXXIV的异构体61. The composition of claim 59, wherein said mixture comprises at least two different isomers of formula XXXI, formula XXXII, formula XXXIII or formula XXXIV 式XXXIFormula XXXI
Figure A038059380021C2
Figure A038059380021C2
式XXXIIFormula XXXII
Figure A038059380022C1
Figure A038059380022C1
式XXXIIIFormula XXXIII
Figure A038059380022C2
Figure A038059380022C2
式XXXIVFormula XXXIV 其中每个所述Y相同或不同并选自氢、烷基、芳基、取代芳基或卤素和每个所述R1相同或不同并选自氢、卤素、烷基、芳基、取代芳基、杂芳基、芳醚、链烯基、炔基、烷氧基、羟烷基、羟芳基、羟链烯基、羟炔基、羟基或羧基。Wherein each said Y is the same or different and is selected from hydrogen, alkyl, aryl, substituted aryl or halogen and each of said R is the same or different and is selected from hydrogen, halogen, alkyl, aryl, substituted aryl radical, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy or carboxyl.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116390972A (en) * 2020-09-21 2023-07-04 3M创新有限公司 Hyperbranched polymers, processes for their preparation and curable compositions comprising them

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878779B2 (en) * 2004-06-10 2012-02-15 富士フイルム株式会社 Film forming composition, insulating film and electronic device
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP4659486B2 (en) * 2005-03-01 2011-03-30 富士フイルム株式会社 Insulating film for electronic device, electronic device, and method for producing insulating film for electronic device
JP2006257212A (en) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd Film-forming composition, insulation film using it and electronic device
JP2007031663A (en) * 2005-07-29 2007-02-08 Fujifilm Corp Film forming composition, insulating film formed using the same, and electronic device
JP2007314778A (en) * 2006-04-26 2007-12-06 Fujifilm Corp Film forming composition, insulating film formed using the composition, and electronic device
WO2007143029A1 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Porous materials derived from polymer composites
WO2007143025A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
US7790234B2 (en) 2006-05-31 2010-09-07 Michael Raymond Ayers Low dielectric constant materials prepared from soluble fullerene clusters
WO2007143026A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
EP2094738B1 (en) * 2006-11-17 2013-02-27 University Of Massachusetts Lowell Research Foundation Functional hydrocarbon polymers and process for producing same
JP2008231259A (en) * 2007-03-20 2008-10-02 Sumitomo Bakelite Co Ltd Organic insulating material
JP2009013116A (en) 2007-07-05 2009-01-22 Daicel Chem Ind Ltd Ethynylphenylbiadamantane derivative
GB2451865A (en) * 2007-08-15 2009-02-18 Univ Liverpool Microporous polymers from alkynyl monomers
US12500080B2 (en) * 2022-08-26 2025-12-16 Applied Materials, Inc. Systems and methods for depositing low-K dielectric films
WO2024214530A1 (en) * 2023-04-10 2024-10-17 株式会社レゾナック Resin composition, prepreg, resin film, metal-clad laminate, printed wiring board, semiconductor package, and acenaphthylene homopolymer
WO2025243951A1 (en) * 2024-05-23 2025-11-27 株式会社レゾナック Curable composition, prepreg, resin film, metal-clad laminate, printed wiring board, semiconductor package, and acenaphthylene polymer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3415741B2 (en) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 Composition for forming electrically insulating thin film and method for forming electrically insulating thin film
EP1141128B1 (en) * 1998-11-24 2006-04-12 Dow Global Technologies Inc. A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
JP3483500B2 (en) * 1999-05-28 2004-01-06 富士通株式会社 Insulating film forming material, insulating film forming method, and semiconductor device
JP2001192539A (en) * 2000-01-13 2001-07-17 Jsr Corp Thermosetting resin composition, cured product thereof, and circuit board including the cured product
US6509415B1 (en) * 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
JP4651774B2 (en) * 2000-04-11 2011-03-16 新日鐵化学株式会社 Aromatic oligomer, phenol resin composition containing the same, epoxy resin composition and cured product thereof
JP2002003683A (en) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd Resin composition low in both hygroscopic property and birefringence and forming material, sheet of film and optical parts obtained from the resin composition
EP1197998A3 (en) * 2000-10-10 2005-12-21 Shipley Company LLC Antireflective porogens
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP2003131001A (en) * 2001-05-25 2003-05-08 Shipley Co Llc Porous optical material
US7049005B2 (en) * 2001-05-30 2006-05-23 Honeywell International Inc. Organic compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116390972A (en) * 2020-09-21 2023-07-04 3M创新有限公司 Hyperbranched polymers, processes for their preparation and curable compositions comprising them

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