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WO2003060979A3 - Compositions organiques - Google Patents

Compositions organiques Download PDF

Info

Publication number
WO2003060979A3
WO2003060979A3 PCT/US2003/000948 US0300948W WO03060979A3 WO 2003060979 A3 WO2003060979 A3 WO 2003060979A3 US 0300948 W US0300948 W US 0300948W WO 03060979 A3 WO03060979 A3 WO 03060979A3
Authority
WO
WIPO (PCT)
Prior art keywords
porogen
set forth
forth below
aromatic rings
polyacenaphthylene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/000948
Other languages
English (en)
Other versions
WO2003060979A2 (fr
Inventor
Chan-En Li
Ruslan Zherebin
Nassrin Sleiman
Amauel Gebrebrhan
Annath Naman
John G Sikonia
Kreisler Lau
Paul G Apen
Boris Korolev
Nancy Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/158,513 external-priority patent/US7141188B2/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to JP2003560974A priority Critical patent/JP2005516382A/ja
Priority to EP03729654A priority patent/EP1466356A2/fr
Priority to KR10-2004-7010994A priority patent/KR20040104454A/ko
Priority to AU2003210504A priority patent/AU2003210504A1/en
Publication of WO2003060979A2 publication Critical patent/WO2003060979A2/fr
Publication of WO2003060979A3 publication Critical patent/WO2003060979A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Insulating Materials (AREA)

Abstract

Cette invention concerne une composition renfermant : (a) un matériau diélectrique ; et (b) un porogène comprenant au moins deux noyaux aromatiques fusionnés, chacun de ces noyaux aromatiques fusionnés comprenant au moins un substituant alkyle, et une liaison reliant au moins deux des substituants alkyle sur des noyaux aromatiques adjacents. Le matériau diélectrique est de préférence une composition renfermant : (a) un composant thermodurcissable comprenant (1) éventuellement un monomère représenté par la formule (I) telle que définie dans la description et (2) au moins un oligomère ou un polymère représenté par la formule (II) telle que définie dans la description et dans laquelle Q, G, h, i, j et w sont tels que définis dans la description ; et (b) un porogène. Le porogène est de préférence sélectionné dans un groupe comprenant homopolymère polyacénaphthylène non fonctionnalisé, homopolymère polyacénaphthylène fonctionnalisé, copolymère polyacénaphthylène, polynorbornène, polycaprolactone, poly(2-vinylnaphthalène), vinyl anthracène, polystyrène, dérivés polystyrène, polysiloxane, polyester, polyéther, polyacrylate, polycarbonate aliphatique, polysulfone, polylactide et des mélanges de ces éléments. Les compositions de la présente invention servent en particulier de matériau de substrat diélectrique dans des micropuces, des modules multipuces, des cartes de circuit imprimé stratifiées et des tableaux de connexions imprimés.
PCT/US2003/000948 2002-01-15 2003-01-14 Compositions organiques Ceased WO2003060979A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003560974A JP2005516382A (ja) 2002-01-15 2003-01-14 有機組成物
EP03729654A EP1466356A2 (fr) 2002-01-15 2003-01-14 Compositions organiques
KR10-2004-7010994A KR20040104454A (ko) 2002-01-15 2003-01-14 유기 조성물
AU2003210504A AU2003210504A1 (en) 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US35018702P 2002-01-15 2002-01-15
US60/350,187 2002-01-15
US35055702P 2002-01-22 2002-01-22
US60/350,557 2002-01-22
US35301102P 2002-01-30 2002-01-30
US60/353,011 2002-01-30
US37621902P 2002-04-29 2002-04-29
US60/376,219 2002-04-29
US37842402P 2002-05-07 2002-05-07
US60/378,424 2002-05-07
US10/158,513 2002-05-30
US10/158,513 US7141188B2 (en) 2001-05-30 2002-05-30 Organic compositions

Publications (2)

Publication Number Publication Date
WO2003060979A2 WO2003060979A2 (fr) 2003-07-24
WO2003060979A3 true WO2003060979A3 (fr) 2004-07-15

Family

ID=27558468

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/000948 Ceased WO2003060979A2 (fr) 2002-01-15 2003-01-14 Compositions organiques

Country Status (6)

Country Link
EP (1) EP1466356A2 (fr)
JP (1) JP2005516382A (fr)
KR (1) KR20040104454A (fr)
CN (1) CN1643669A (fr)
AU (1) AU2003210504A1 (fr)
WO (1) WO2003060979A2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878779B2 (ja) * 2004-06-10 2012-02-15 富士フイルム株式会社 膜形成用組成物、絶縁膜及び電子デバイス
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP4659486B2 (ja) * 2005-03-01 2011-03-30 富士フイルム株式会社 電子デバイス用絶縁膜、電子デバイス及び電子デバイス用絶縁膜の製造方法
JP2006257212A (ja) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd 膜形成用組成物、それを用いた絶縁膜および電子デバイス
JP2007031663A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス
JP2007314778A (ja) * 2006-04-26 2007-12-06 Fujifilm Corp 膜形成用組成物、該組成物を用いて形成した絶縁膜及び電子デバイス
WO2007143028A2 (fr) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc MatÉriaux À faible constante diÉlectrique prÉparÉs À partir d'agrÉgats de fullerÈnes solubles
WO2007143025A2 (fr) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Solides inorganiques poreux pour utilisation comme matÉriaux À faible constante diÉlectrique
WO2007143029A1 (fr) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Matériaux poreux dérivés de composites polymères
WO2007143026A2 (fr) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Réseaux périodiques liés de carbone alterné et d'agrégats inorganiques pour une utilisation en tant que matériaux à faible constante diélectrique
EP2094738B1 (fr) * 2006-11-17 2013-02-27 University Of Massachusetts Lowell Research Foundation Polymères hydrocarbonés fonctionnels et leur procédé de fabrication
JP2008231259A (ja) * 2007-03-20 2008-10-02 Sumitomo Bakelite Co Ltd 有機絶縁材料
JP2009013116A (ja) 2007-07-05 2009-01-22 Daicel Chem Ind Ltd エチニルフェニルビアダマンタン誘導体
GB2451865A (en) 2007-08-15 2009-02-18 Univ Liverpool Microporous polymers from alkynyl monomers
JP2023542688A (ja) * 2020-09-21 2023-10-11 スリーエム イノベイティブ プロパティズ カンパニー 超分岐ポリマー、その製造方法、及びそれを含む硬化性組成物
US20240087880A1 (en) * 2022-08-26 2024-03-14 Applied Materials, Inc. Systems and methods for depositing low-k dielectric films
CN119110829A (zh) * 2023-04-10 2024-12-10 株式会社力森诺科 树脂组合物、预浸料、树脂膜、覆金属层叠板、印刷配线板、半导体封装体及苊均聚物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0869516A1 (fr) * 1997-03-31 1998-10-07 Dow Corning Toray Silicone Company, Limited Composition et peocédé pour former des films minces électriquement isolants
WO2000031183A1 (fr) * 1998-11-24 2000-06-02 The Dow Chemical Company Composition contenant un precurseur de matrice reticulable et porogene et matrice poreuse prepares a partir de ladite composition
JP2001192539A (ja) * 2000-01-13 2001-07-17 Jsr Corp 熱硬化性樹脂組成物、その硬化物およびその硬化物を含む回路基板
WO2001078110A2 (fr) * 2000-04-07 2001-10-18 Honeywell International Inc. Matieres dielectriques organiques a faible constante dielectrique basees sur des structures en forme de cage
JP2002003683A (ja) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd 低吸湿低複屈折樹脂組成物、これから得られる成形材、シート又はフィルムおよび光学用部品

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JP3483500B2 (ja) * 1999-05-28 2004-01-06 富士通株式会社 絶縁膜形成材料、絶縁膜形成方法及び半導体装置
JP4651774B2 (ja) * 2000-04-11 2011-03-16 新日鐵化学株式会社 芳香族オリゴマー、それを配合したフェノール樹脂組成物並びにエポキシ樹脂組成物およびその硬化物
EP1197998A3 (fr) * 2000-10-10 2005-12-21 Shipley Company LLC Agent porogène antireflet
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
US7049005B2 (en) * 2001-05-30 2006-05-23 Honeywell International Inc. Organic compositions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0869516A1 (fr) * 1997-03-31 1998-10-07 Dow Corning Toray Silicone Company, Limited Composition et peocédé pour former des films minces électriquement isolants
WO2000031183A1 (fr) * 1998-11-24 2000-06-02 The Dow Chemical Company Composition contenant un precurseur de matrice reticulable et porogene et matrice poreuse prepares a partir de ladite composition
JP2001192539A (ja) * 2000-01-13 2001-07-17 Jsr Corp 熱硬化性樹脂組成物、その硬化物およびその硬化物を含む回路基板
WO2001078110A2 (fr) * 2000-04-07 2001-10-18 Honeywell International Inc. Matieres dielectriques organiques a faible constante dielectrique basees sur des structures en forme de cage
JP2002003683A (ja) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd 低吸湿低複屈折樹脂組成物、これから得られる成形材、シート又はフィルムおよび光学用部品

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 200230, Derwent World Patents Index; Class A13, AN 2002-245992, XP002263344 *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 05 3 May 2002 (2002-05-03) *

Also Published As

Publication number Publication date
JP2005516382A (ja) 2005-06-02
AU2003210504A1 (en) 2003-07-30
EP1466356A2 (fr) 2004-10-13
CN1643669A (zh) 2005-07-20
AU2003210504A8 (en) 2003-07-30
WO2003060979A2 (fr) 2003-07-24
KR20040104454A (ko) 2004-12-10

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