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WO2002086464A3 - Semiconductor gas sensor having a circular arrangement of interdigital electrodes and heating structures, and method for the producing the sensor during which the sensitive semiconductor layer is applied in the form of drops - Google Patents

Semiconductor gas sensor having a circular arrangement of interdigital electrodes and heating structures, and method for the producing the sensor during which the sensitive semiconductor layer is applied in the form of drops Download PDF

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Publication number
WO2002086464A3
WO2002086464A3 PCT/DE2002/000797 DE0200797W WO02086464A3 WO 2002086464 A3 WO2002086464 A3 WO 2002086464A3 DE 0200797 W DE0200797 W DE 0200797W WO 02086464 A3 WO02086464 A3 WO 02086464A3
Authority
WO
WIPO (PCT)
Prior art keywords
drops
producing
gas sensor
semiconductor layer
circular arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/000797
Other languages
German (de)
French (fr)
Other versions
WO2002086464A2 (en
Inventor
Michael Bauer
Detlef Gruen
Christian Krummel
Ulrich Schilling
Erwin Rein
Michael Seiter
Heribert Weber
Odd-Axel Pruetz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2002086464A2 publication Critical patent/WO2002086464A2/en
Publication of WO2002086464A3 publication Critical patent/WO2002086464A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The invention relates to a gas sensor comprising a membrane (18), a heating structure (10) that is arranged on the membrane (18), an evaluating structure (12) that is arranged on the membrane (18), and a sensitive layer (14) that is also arranged on the membrane (18). Said layer can be heated by the heating structure (10) and its electrical resistance can be evaluated by the evaluating structure (12). The sensitive layer (14) is applied in the form of drops (16), and the remaining structures (10, 12) are at least partially adapted to the shape of the sensitive layer (14). The invention also relates to a method for producing a gas sensor.
PCT/DE2002/000797 2001-04-20 2002-03-05 Semiconductor gas sensor having a circular arrangement of interdigital electrodes and heating structures, and method for the producing the sensor during which the sensitive semiconductor layer is applied in the form of drops Ceased WO2002086464A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10119405.6 2001-04-20
DE2001119405 DE10119405A1 (en) 2001-04-20 2001-04-20 Gas sensor with heated, resistive sensitive layer on membrane, is produced by depositing sensitive layer in droplet form

Publications (2)

Publication Number Publication Date
WO2002086464A2 WO2002086464A2 (en) 2002-10-31
WO2002086464A3 true WO2002086464A3 (en) 2003-04-17

Family

ID=7682104

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000797 Ceased WO2002086464A2 (en) 2001-04-20 2002-03-05 Semiconductor gas sensor having a circular arrangement of interdigital electrodes and heating structures, and method for the producing the sensor during which the sensitive semiconductor layer is applied in the form of drops

Country Status (2)

Country Link
DE (1) DE10119405A1 (en)
WO (1) WO2002086464A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8802568B2 (en) 2012-09-27 2014-08-12 Sensirion Ag Method for manufacturing chemical sensor with multiple sensor cells
US11371951B2 (en) 2012-09-27 2022-06-28 Sensirion Ag Gas sensor comprising a set of one or more sensor cells
DE102016222913A1 (en) 2016-11-21 2018-05-24 Robert Bosch Gmbh Gas sensor with a semiconductor substrate having at least one insulating layer and a conductor track
CN108169293B (en) * 2018-02-11 2024-10-01 中国工程物理研究院总体工程研究所 Calibration device and calibration method for high-precision thin film resistor hydrogen sensor
DE102023203826A1 (en) 2023-04-25 2024-10-31 Robert Bosch Gesellschaft mit beschränkter Haftung Sensor system for determining a gas concentration in the environment of the sensor system and a method for producing a sensor element for such a sensor system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901067A (en) * 1973-06-21 1975-08-26 Gen Monitors Semiconductor gas detector and method therefor
EP0795747A1 (en) * 1996-03-14 1997-09-17 Motorola Semiconducteurs S.A. Semiconductor chemical sensor device and method of forming a semiconductor chemical sensor device
WO2001002844A1 (en) * 1999-07-02 2001-01-11 Microchemical Systems S.A. Metal oxide chemical gas sensor and method for making same
WO2001013087A2 (en) * 1999-08-18 2001-02-22 California Institute Of Technology Sensors and sensor arrays of conducting and insulating composites and methods of use thereof
WO2002050528A1 (en) * 2000-12-20 2002-06-27 Eidgenössische Technische Hochschule Zürich Microsensor and single chip integrated microsensor system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901067A (en) * 1973-06-21 1975-08-26 Gen Monitors Semiconductor gas detector and method therefor
EP0795747A1 (en) * 1996-03-14 1997-09-17 Motorola Semiconducteurs S.A. Semiconductor chemical sensor device and method of forming a semiconductor chemical sensor device
WO2001002844A1 (en) * 1999-07-02 2001-01-11 Microchemical Systems S.A. Metal oxide chemical gas sensor and method for making same
WO2001013087A2 (en) * 1999-08-18 2001-02-22 California Institute Of Technology Sensors and sensor arrays of conducting and insulating composites and methods of use thereof
WO2002050528A1 (en) * 2000-12-20 2002-06-27 Eidgenössische Technische Hochschule Zürich Microsensor and single chip integrated microsensor system

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BRIAND D ET AL: "Design and fabrication of high-temperature micro-hotplates for drop-coated gas sensors", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 68, no. 1-3, 25 August 2000 (2000-08-25), pages 223 - 233, XP004216618, ISSN: 0925-4005 *
CERDA J ET AL: "Deposition on micromachined silicon substrates of gas sensitive layers obtained by a wet chemical route: A CO/CH4 high performance sensor", 2ND INTERNATIONALSEMINAR ON SEMICONDUCTOR GAS SENSORS;USTRON, POLAND SEP 25-28 2000, vol. 391, no. 2, 25 September 2000 (2000-09-25), Thin Solid Films;Thin Solid Films Jul 16 2001, pages 265 - 269, XP004246728 *
SIMON ISOLDE ET AL: "Micromachined metal oxide gas sensors: Opportunities to improve sensor performance", SENS ACTUATORS, B CHEM;SENSORS AND ACTUATORS, B: CHEMICAL 2001, vol. 73, no. 1, 2001, pages 1 - 26, XP002224360 *
UDREA F ET AL: "Design and simulations of SOI CMOS micro-hotplate gas sensors", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 78, no. 1-3, 30 August 2001 (2001-08-30), pages 180 - 190, XP004297654, ISSN: 0925-4005 *

Also Published As

Publication number Publication date
WO2002086464A2 (en) 2002-10-31
DE10119405A1 (en) 2002-10-24

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